GT Advanced Technologies Inc  

(Public, NASDAQ:GTAT)   Watch this stock  
Find more results for GTAT
4.38
+0.09 (2.10%)
May 24 - Close
NASDAQ real-time data - Disclaimer
Currency in USD
Range 4.23 - 4.40
52 week 2.61 - 7.09
Open 4.25
Vol / Avg. 3.49M/5.16M
Mkt cap 522.96M
P/E     -
Div/yield     -
EPS -1.36
Shares 119.40M
Beta 1.71
Inst. own 103%
Jul 29, 2013
Q2 2013 GT Advanced Technologies Inc. Earnings Release Add to calendar
Jun 5, 2013
GT Advanced Technologies Inc. Annual Shareholder Meeting - 8:00AM EDT - Add to calendar
May 27, 2013
Q1 2013 GT Advanced Technologies Inc. Earnings Release Add to calendar
May 17, 2013
GT Advanced Technologies Inc. Acquires Thermal Technology LLC
May 13, 2013
Q4 2012 GT Advanced Technologies Inc. Earnings Release
May 7, 2013
GT Advanced Technologies Inc. at Bank of America Merrill Lynch Smid Cap Conference
May 2, 2013
Q1 2013 GT Advanced Technologies Inc. Earnings Conference Call
Feb 28, 2013
Q4 2012 GT Advanced Technologies Inc. Earnings Conference Call
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Key stats and ratios

Q1 (Mar '13) 2012
Net profit margin -32.33% -
Operating margin -45.56% -
EBITD margin - -
Return on average assets -7.78% -
Return on average equity -31.90% -
Employees 531 -
Carbon Disclosure Rating - -

Address

20 Trafalgar Square
NASHUA, NH 03063
United States - Map
+1-603-8835200 (Phone)
+1-603-5956993 (Fax)

Website links

External links

Analyst Estimates - MarketWatch
SEC Filings - EDGAR Online
Major Holders - MSN Money
Discussion Group - Google Finance

Description

GT Advanced Technologies Inc. is diversified technology company with crystal growth equipment and solutions for the global solar, light emitting diode (LED) and electronics industries. The Company operates in three segments: its polysilicon business, its photovoltaic (PV), business and its sapphire business. The Company's principal products are Silicon Deposition Reactors (SDR) and related equipment used to produce polysilicon, the key raw material used in silicon-based solar wafers and cells; Advanced sapphire crystallization furnaces (ASF) which are used to crystallize sapphire boules, and Directional solidification (DSS) furnaces and related equipment used to cast multicrystalline and MonoCast crystalline silicon ingots. On January 7, 2013, the Company announced the idling of its HiCz pilot manufacturing facility in Hazelwood, Missouri. In May 2013, the Company acquired the business of Thermal Technology LLC.

Officers and directors

Matthew E. Massengill Independent Chairman of the Board
Age: 51
Bio & Compensation  - Reuters
Thomas Gutierrez President, Chief Executive Officer, Director
Age: 63
Bio & Compensation  - Reuters
Richard J. Gaynor Chief Financial Officer, Vice President
Age: 52
Bio & Compensation  - Reuters
David W. Keck Executive Vice President, General Manager - Polysilicon and Photovoltaic Equipment
Age: 47
Bio & Compensation  - Reuters
Hoil Kim Vice President, Chief Administrative Officer, General Counsel, Secretary
Age: 54
Bio & Compensation  - Reuters
Cheryl A. Diuguid Vice President, General Manager - Sapphire Materials and Equipment
Age: 61
Bio & Compensation  - Reuters
Jeffrey John Ford Vice President, General Manager - Asia Photovoltaic and Sapphire Equipment
Age: 56
Bio & Compensation  - Reuters
Vikram Singh Vice President, General Manager - Photovoltaic
Age: 45
Bio & Compensation  - Reuters
Thomas Wroe Jr. Director
Age: 62
Bio & Compensation  - Reuters
John Michal Conaway Independent Director
Age: 64
Bio & Compensation  - Reuters