CA1029475A - Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same - Google Patents
Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the sameInfo
- Publication number
- CA1029475A CA1029475A CA223,550A CA223550A CA1029475A CA 1029475 A CA1029475 A CA 1029475A CA 223550 A CA223550 A CA 223550A CA 1029475 A CA1029475 A CA 1029475A
- Authority
- CA
- Canada
- Prior art keywords
- oxygen
- silicon
- manufacturing
- semiconductor device
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3617574A JPS532552B2 (en) | 1974-03-30 | 1974-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1029475A true CA1029475A (en) | 1978-04-11 |
Family
ID=12462395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA223,550A Expired CA1029475A (en) | 1974-03-30 | 1975-04-01 | Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same |
Country Status (14)
Country | Link |
---|---|
US (1) | US4014037A (en) |
JP (1) | JPS532552B2 (en) |
AT (1) | AT370559B (en) |
AU (1) | AU502578B2 (en) |
CA (1) | CA1029475A (en) |
CH (1) | CH583461A5 (en) |
DE (1) | DE2513459B2 (en) |
ES (1) | ES436123A1 (en) |
FR (1) | FR2266301B1 (en) |
GB (1) | GB1496814A (en) |
IT (1) | IT1034720B (en) |
NL (1) | NL182681C (en) |
SE (1) | SE406249B (en) |
SU (1) | SU638289A3 (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6022497B2 (en) * | 1974-10-26 | 1985-06-03 | ソニー株式会社 | semiconductor equipment |
JPS5193874A (en) | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
JPS6041458B2 (en) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | Manufacturing method of semiconductor device |
JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
JPS51126761A (en) * | 1975-04-25 | 1976-11-05 | Sony Corp | Schottky barrier type semi-conductor unit |
JPS51128269A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
FR2335951A1 (en) * | 1975-12-19 | 1977-07-15 | Radiotechnique Compelec | SEMICONDUCTOR DEVICE WITH A PASSIVE SURFACE AND METHOD OF OBTAINING THE PASSIVATION STRUCTURE |
IN147578B (en) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
IN147572B (en) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
DE2713647C2 (en) * | 1977-03-28 | 1984-11-29 | Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa | A semiconductor device composed of a semiconductor substrate and a surface protective film |
US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
DE2730367A1 (en) * | 1977-07-05 | 1979-01-18 | Siemens Ag | PROCESS FOR PASSIVATING SEMICONDUCTOR ELEMENTS |
US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
US4191788A (en) * | 1978-11-13 | 1980-03-04 | Trw Inc. | Method to reduce breakage of V-grooved <100> silicon substrate |
US4199384A (en) * | 1979-01-29 | 1980-04-22 | Rca Corporation | Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands |
JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
US4420765A (en) * | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
US4537813A (en) * | 1982-09-27 | 1985-08-27 | At&T Technologies, Inc. | Photomask encapsulation |
US4965173A (en) * | 1982-12-08 | 1990-10-23 | International Rectifier Corporation | Metallizing process and structure for semiconductor devices |
US4489103A (en) * | 1983-09-16 | 1984-12-18 | Rca Corporation | SIPOS Deposition method |
JPS6068621A (en) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | Manufacture of semiconductor device |
EP0160941A3 (en) * | 1984-05-07 | 1987-03-25 | General Electric Company | High voltage interconnect system for a semiconductor integrated circuit |
US4663820A (en) * | 1984-06-11 | 1987-05-12 | International Rectifier Corporation | Metallizing process for semiconductor devices |
DE3520599A1 (en) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Semiconductor component |
JPS6276673A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | High dielectric strength semiconductor device |
KR900005038B1 (en) * | 1987-07-31 | 1990-07-18 | 삼성전자 주식회사 | Method for manufacturing of i. c having high resistance silicon substrate |
US5192993A (en) * | 1988-09-27 | 1993-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having improved element isolation area |
EP0388612B1 (en) * | 1989-03-24 | 1994-11-30 | International Business Machines Corporation | Semiconductor device with self-aligned contact to buried subcollector |
DE4119904A1 (en) * | 1991-06-17 | 1992-12-24 | Telefunken Electronic Gmbh | SEMICONDUCTOR ARRANGEMENT |
JP5311791B2 (en) * | 2007-10-12 | 2013-10-09 | 東京エレクトロン株式会社 | Method for forming polysilicon film |
JP5195186B2 (en) * | 2008-09-05 | 2013-05-08 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
US11171039B2 (en) * | 2018-03-29 | 2021-11-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Composite semiconductor substrate, semiconductor device and method for manufacturing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE300472B (en) * | 1965-03-31 | 1968-04-29 | Asea Ab | |
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
US3710204A (en) * | 1967-05-20 | 1973-01-09 | Telefunken Patent | A semiconductor device having a screen electrode of intrinsic semiconductor material |
JPS497870B1 (en) * | 1969-06-06 | 1974-02-22 | ||
US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
JPS5044209Y2 (en) * | 1971-04-20 | 1975-12-17 |
-
1974
- 1974-03-30 JP JP3617574A patent/JPS532552B2/ja not_active Expired
-
1975
- 1975-03-08 AT AT0243075A patent/AT370559B/en not_active IP Right Cessation
- 1975-03-18 AU AU79189/75A patent/AU502578B2/en not_active Expired
- 1975-03-20 GB GB11691/75A patent/GB1496814A/en not_active Expired
- 1975-03-24 US US05/561,532 patent/US4014037A/en not_active Expired - Lifetime
- 1975-03-25 CH CH381875A patent/CH583461A5/xx not_active IP Right Cessation
- 1975-03-26 DE DE2513459A patent/DE2513459B2/en not_active Ceased
- 1975-03-26 FR FR7509475A patent/FR2266301B1/fr not_active Expired
- 1975-03-27 SE SE7503614A patent/SE406249B/en not_active IP Right Cessation
- 1975-03-27 ES ES436123A patent/ES436123A1/en not_active Expired
- 1975-03-28 SU SU752121500A patent/SU638289A3/en active
- 1975-03-28 IT IT21844/75A patent/IT1034720B/en active
- 1975-04-01 CA CA223,550A patent/CA1029475A/en not_active Expired
- 1975-04-01 NL NLAANVRAGE7503870,A patent/NL182681C/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ATA243075A (en) | 1982-08-15 |
AT370559B (en) | 1983-04-11 |
DE2513459A1 (en) | 1975-10-09 |
NL182681C (en) | 1988-04-18 |
SE7503614L (en) | 1975-10-01 |
AU7918975A (en) | 1976-09-23 |
FR2266301B1 (en) | 1980-04-11 |
GB1496814A (en) | 1978-01-05 |
IT1034720B (en) | 1979-10-10 |
NL182681B (en) | 1987-11-16 |
AU502578B2 (en) | 1979-08-02 |
JPS532552B2 (en) | 1978-01-28 |
CH583461A5 (en) | 1976-12-31 |
FR2266301A1 (en) | 1975-10-24 |
JPS50130368A (en) | 1975-10-15 |
US4014037A (en) | 1977-03-22 |
DE2513459B2 (en) | 1981-01-08 |
ES436123A1 (en) | 1977-04-16 |
SE406249C (en) | 1979-01-29 |
SU638289A3 (en) | 1978-12-15 |
NL7503870A (en) | 1975-10-02 |
SE406249B (en) | 1979-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1029475A (en) | Semiconductor device having a passivation layer consisting of silicon and oxygen, and method of manufacturing the same | |
CA954236A (en) | Method of manufacturing a semiconductor device and semiconductor device manufactured by using such a method | |
AU474400B2 (en) | Method of manufacturing a semiconductor device and semiconductor device manufactured by using the method | |
AU500045B2 (en) | Method of etching a semiconductor device | |
AU463626B2 (en) | Method of manufacturing a semiconductor device and semiconductor device manufactured bythe method | |
AU508451B2 (en) | Method of manufacturing a semiconductor device | |
AU473149B2 (en) | Semiconductor device and method of manufacturing same | |
AU505948B2 (en) | Method of manufacturing a semiconductor device | |
AU504667B2 (en) | Semiconductor device with passivating layer | |
CA1011005A (en) | Method for fabricating mos devices with a multiplicity of thresholds on a single semiconductor substrate | |
JPS52153664A (en) | Method of manufacturing semiconductor oxide layer | |
AU504549B2 (en) | Method of manufacturing alight-emissive semiconductor device | |
CA937496A (en) | Method of manufacturing a semiconductor device and device manufactured by the method | |
GB1553730A (en) | Semiconductor device and method of manufacturing the same | |
CA963172A (en) | Semiconductor device and method of manufacturing the device | |
CA1029134A (en) | Semiconductor device having complementary transistor structures and method of manufacturing same | |
CA997870A (en) | Semiconductor device and method of manufacturing the device | |
JPS51123073A (en) | Insulated gate (type) semiconductor device | |
JPS51113461A (en) | A method for manufacturing semiconductor devices | |
AU469642B2 (en) | Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method | |
AU470407B2 (en) | Semiconductor device and method of manufacturing same | |
JPS5377168A (en) | Production of semiconductor device | |
JPS51147259A (en) | Manufacturing process of semiconductor device | |
JPS5365086A (en) | Production of semiconductor device | |
CA861139A (en) | Method of manufacturing a semiconductor device and device manufactured by said method |