CA1159160A - Pattern forming apparatus - Google Patents
Pattern forming apparatusInfo
- Publication number
- CA1159160A CA1159160A CA000398647A CA398647A CA1159160A CA 1159160 A CA1159160 A CA 1159160A CA 000398647 A CA000398647 A CA 000398647A CA 398647 A CA398647 A CA 398647A CA 1159160 A CA1159160 A CA 1159160A
- Authority
- CA
- Canada
- Prior art keywords
- pattern
- forming apparatus
- photoresist layer
- liquid
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Abstract
ABSTRACT OF THE DISCLOSURE
There is disclosed a pattern forming apparatus for projecting a pattern which is formed on a reticle upon a photoresist layer on a substrate which comprises an illumination system for illuminating the pattern for forming an optical image, a reduction lenses for reducing the optical pattern image at a certain reduction ratio and projecting the reduced optical pattern image upon the photoresist layer formed on the substrate for exposing the photoresist layer, and liquid sustaining means for filling a gap between at least a portion of the reduction lenses and the photoresist layer with an optically transparent liquid having a refractive index of more than 1 (one).
There is disclosed a pattern forming apparatus for projecting a pattern which is formed on a reticle upon a photoresist layer on a substrate which comprises an illumination system for illuminating the pattern for forming an optical image, a reduction lenses for reducing the optical pattern image at a certain reduction ratio and projecting the reduced optical pattern image upon the photoresist layer formed on the substrate for exposing the photoresist layer, and liquid sustaining means for filling a gap between at least a portion of the reduction lenses and the photoresist layer with an optically transparent liquid having a refractive index of more than 1 (one).
Description
1 ~591~) 1 This invention relates t:o an apparatus for forming a pattern of a large scale integration semi-conductor element by utilizing a fine pattern.
Of processes in fabrication of semiconductors, lithography process for the formation of a fine pattern on a substrate is the most important and photolithography using light plays the leading role today in the lithography process.
In the lithography process, as larger integra-tion of the semiconductor elements prevails, it isrequired to improve resolution of the fine pattern and pattern alignment necessary for the formation of the fine pattern at a desired position.
With the photolithography, however, the wave-length of light for exposure constrains the resolutionto a limit in the formation of a fine pattern having a line width of about 1 ~m.
In order to assure the pattern alignment, it is also required to detect the position of the pattern to be formed on the substrate with high precision.
Description will be made hereinbelow in conjunction with the accompanying drawings, in which:
Fig. 1 is a fragmentary sectional view of a substrate useful in explaining disadvantages encountered in a prior art pattern forming apparatus;
1 E~ig. ~ is a schematic diagram showlng a fundamental construction of a pattern forming apparatus embodying the invention;
Flg. 3 is a schematic diagram of another embodiment of the invention; and Fig. 4 is a graph useful in explaining effects brought about by the pattern forming apparatus of the invention.
Referring to Fig. 1, a pattern 10 formed on a substrate 1 and to be detected for aligning the sub-strate 1 is covered with a photoresist layer 2 with an uneven surface. Therefore, refraction of light for pattern detection becomes irregular, thus impairing precise position detection.
This invention contemplates the elimination of the above drawbacks and has for its object to provide a novel pattern forming apparatus effective to improve resolution of a fine pattern and precision of the pattern alignment.
According to one aspect of the present inven-tion, there is provided a pattern forming apparatus for projecting a pattern, which is formed in advance on a reticle, upon a workpiece at a certain reduction ratio, comprising an illumination system for illuminating the pattern for forming an optical pattern image, reduction lenses for projecting the optical pattern image at a certain reduction ratio upon a photoresist iayer formed on a substrate to expose the photoresist layer, and 1 ~ 5 ~ o 1 liquid sustaining rneans for filling a yap between at leas-t a portion of the reduction lenses and the photo-resist layer with an opticall~ transparent liquid having a refractive index of move than l (one~.
Now, description will be made in detail, by way of example, on preferred embodiments of this inven-tion.
The fundamental principle of the present invention will first be descrlbed. In general, the resolution limit R (~m) of a pattern projection optics used for the pattern formation for semiconductor elements is expressed as, R = 0.61 x n x sln ~
where ~: wavelength (~m) of light in vacuum used for exposure, n: refractive index of ambient atmosphere in an exposure system, and sin ~: fixed value of reduction lenses.
For larger integration of semiconductor elements, the pattern for the formation of the semi-conductor element should be finely drawn and the resolution limit R of the pattern projection optics should be improved.
Accordingly, it has hitherto been contrived to minimize the exposure light wavelength or increase the o 1 fi~ed ~ialue sin ) o~ the reduction lenses. However, physical conditioll constrains ~he variatlon of these quantities to limits. It is found that the conven-tional pattern projection and exposure has assumed to carry out the e~posure in air or in vacuum in which n = 1 always stands. The prese~t invention makes it possible to drastically improve the resolution limit R by using an optically transparent liquid having a refractive index n of more than 1.
Specifically, a pattern forming apparatus 20 of the invention has a fundamental construction as shown in Fig. 2. The apparatus 20 comparises an illumination system 6 comprised of a lamp housing unit and condenser lenses (not shown), a reticle 5 provided with a pattern, reduction lenses 4, a semiconductor substrate 1 carried on a wafer stage (not shown) and having a surface on which a photoresist layer 2 is formed, a liquid layer 3 filling a gap between the photoresist layer 2 and at least a portion of the reduction lenses 4, and a pattern detector 7 for positioning the reticle 5 and the sub-strate 1.
In operation, a positioning pattern formed on the reticle 5 and a positioning pattern 10 formed on the substrate 1 are first brought into alignment by means of the pattern detector 7 through the reduction lenses 4. An optical path 11 in this alignment process is shown by solid lines. Then, the reticle 5 provided with a predetermined magnified pattern is illuminated ~ ~ s~
1 by the illumination sys-tem 6 to form an optical pa-ttern image o~. the magnified pattern. This optical pattern image is reduced and ~rojected b~ the reduction lenses 4 upon the photoresi.st layer 2 coated on the semiconduc-tor substrate 1 to e~pose the photoresist layer 2. An optical path 12 in this process is shown by dotted lines. After the first exposure process, the wafer stage carrying the semiconductor substrate 1 is moved tstepped) and a next exposure field is exposed (i.e.
exposure is repeated) in the same manner as the first exposure process. By repeating the exposure process, a predetermined pattern is formed over the entire area of the substrate 1. The pattern forming apparatus 20 of the type as described above is usually termed a reduction projection aligner, and its general construction is referred to as STEP & REPEAT CAMERA, for the detail of which reference may be made to US patent No. 4,057,347.
The pattern forming apparatus 20, according to an embodiment of the present invention is featured by the use of the liquid layer 3 formed and sustained between the reduction lenses 4 and the photoresist layer 2 as has already been described above. The present embodiment defines the pattern forming apparatus 20 by the construc-tion wherein the semiconductor substrate 1 provided with the photoresist layer 2 and a portion or a whole of the reduction lenses 4 are immersed in the liquid layer 3. This liquid layer 3 contains a liquid which can transmit the optical pattern image, that is, 9 ~
1 opticall~ transparent and has a refractive index of more than i (one). Needless to say, the liquid should not be reactlve with materials of the reductlon lenses 4, photoresist layer 2 and semiconductor substrate 1, i.e.
should have chemically s-table characteristics. Examplified as the liquid of this nature are trichlorotrifluoroethane (C2C13F3), chloro~enzene (C6H5Cl~, and water.
In order to form and sustain the liquid layer 3, the liquid is filled in a pool 19 and the reduction lenses 4 and the semiconductor substrate 1 are disposed in the pool 19. Alternatively, in accordance with another embodiment 20' of the invention as shown in Fig. 3, a member 9 may be provided which surrounds the reduction lenses 4 and forms and sustains the liquid layer 3, and the sustaining memker 9 may be equipped with a nozzle 13. Liquid supplied to the nozzle 13 in a direction of an arrow 8 may be drawn out toward the semiconductor substrate 1. With this modification also, the reduction lenses 4 and the photoresist layer 2 are put in immersion in the liquid layer 3.
Acccrding to the foregoing embodiments, when the refractive index n of atmosphere ambient of the exposure system is varied to be more than 1 (one) under the condition that a high resolution reduction lenses 4 usable and available for this invention has a fixed value as defined by sin ~ = 0.28 at a wavelength ~ =
0.436 ~m, the resolution limit R is improved as shown in Fig. 4.
V
1 Speci ically, while the conventional exposure in air achieves a resolvable line width or resolution limit R of 0.95 ~m, the use of a liquid of, for example, n = 1.36 or n = 1.53 such as trichlorotrifluoroethane or chlorobenzene permits a drastic irnprovement of the resolution limit R to 0.69 ~m or 0.62 ~m.
When the refractive indices of the photoresist layer 2 formed on the substrate 1 and of the liquid layer 3 are made equal or almost equal, there occurs no or almost no such error in position detection, which is ascribed to the unevenness of the photoresist layer and has occurred in the conventional system upon detection of the pattern 10 by the position detector 7, even with a photoresist layer 2 having an uneven surface as shown in Fig. 2. In other words, the optical affect of the unevenness of the photoresist layer 2 can be eliminated essentially by melting the optical interface at the photoresist surface in an optically uniform medium, thereby ensuring a stable and highly precise pattern detection.
The present invention is also advantageous in that since the liquid used in the invention can be kept clean by, for example, distillation. It is expected that failure due to the deposition of dusts contained in air to the surface of the photoresist layer 2, which - would occur in the conventional apparatus, can be prevented. Especially, when forming a fine exposure field of less than 1 ~m line width with a reduction projection 1 aligner, difficulties have been encountered ln removing fine dusts contained in air ~,~'r.ich may otherwise be deposited to the ~ine pattern. But, such difficulties can advantageollsly be overcome by the present invention.
Further, since the liquid layer 3 has a larger heat capacity than air, the substrate l can be less affected by temperature variatlons in the course of exposure and possible alignment error due to in-plane distortion of the substrate can be prevented in advance.
While -the foregoing embodiments have been described by way of the reduction projection aligner, the present invention may also be applied advantageously to a 1 : 1 projection aligner for forming a pattern on a substrate, and a checker or a measuring instrument for a fine pattern on a substrate.
Of processes in fabrication of semiconductors, lithography process for the formation of a fine pattern on a substrate is the most important and photolithography using light plays the leading role today in the lithography process.
In the lithography process, as larger integra-tion of the semiconductor elements prevails, it isrequired to improve resolution of the fine pattern and pattern alignment necessary for the formation of the fine pattern at a desired position.
With the photolithography, however, the wave-length of light for exposure constrains the resolutionto a limit in the formation of a fine pattern having a line width of about 1 ~m.
In order to assure the pattern alignment, it is also required to detect the position of the pattern to be formed on the substrate with high precision.
Description will be made hereinbelow in conjunction with the accompanying drawings, in which:
Fig. 1 is a fragmentary sectional view of a substrate useful in explaining disadvantages encountered in a prior art pattern forming apparatus;
1 E~ig. ~ is a schematic diagram showlng a fundamental construction of a pattern forming apparatus embodying the invention;
Flg. 3 is a schematic diagram of another embodiment of the invention; and Fig. 4 is a graph useful in explaining effects brought about by the pattern forming apparatus of the invention.
Referring to Fig. 1, a pattern 10 formed on a substrate 1 and to be detected for aligning the sub-strate 1 is covered with a photoresist layer 2 with an uneven surface. Therefore, refraction of light for pattern detection becomes irregular, thus impairing precise position detection.
This invention contemplates the elimination of the above drawbacks and has for its object to provide a novel pattern forming apparatus effective to improve resolution of a fine pattern and precision of the pattern alignment.
According to one aspect of the present inven-tion, there is provided a pattern forming apparatus for projecting a pattern, which is formed in advance on a reticle, upon a workpiece at a certain reduction ratio, comprising an illumination system for illuminating the pattern for forming an optical pattern image, reduction lenses for projecting the optical pattern image at a certain reduction ratio upon a photoresist iayer formed on a substrate to expose the photoresist layer, and 1 ~ 5 ~ o 1 liquid sustaining rneans for filling a yap between at leas-t a portion of the reduction lenses and the photo-resist layer with an opticall~ transparent liquid having a refractive index of move than l (one~.
Now, description will be made in detail, by way of example, on preferred embodiments of this inven-tion.
The fundamental principle of the present invention will first be descrlbed. In general, the resolution limit R (~m) of a pattern projection optics used for the pattern formation for semiconductor elements is expressed as, R = 0.61 x n x sln ~
where ~: wavelength (~m) of light in vacuum used for exposure, n: refractive index of ambient atmosphere in an exposure system, and sin ~: fixed value of reduction lenses.
For larger integration of semiconductor elements, the pattern for the formation of the semi-conductor element should be finely drawn and the resolution limit R of the pattern projection optics should be improved.
Accordingly, it has hitherto been contrived to minimize the exposure light wavelength or increase the o 1 fi~ed ~ialue sin ) o~ the reduction lenses. However, physical conditioll constrains ~he variatlon of these quantities to limits. It is found that the conven-tional pattern projection and exposure has assumed to carry out the e~posure in air or in vacuum in which n = 1 always stands. The prese~t invention makes it possible to drastically improve the resolution limit R by using an optically transparent liquid having a refractive index n of more than 1.
Specifically, a pattern forming apparatus 20 of the invention has a fundamental construction as shown in Fig. 2. The apparatus 20 comparises an illumination system 6 comprised of a lamp housing unit and condenser lenses (not shown), a reticle 5 provided with a pattern, reduction lenses 4, a semiconductor substrate 1 carried on a wafer stage (not shown) and having a surface on which a photoresist layer 2 is formed, a liquid layer 3 filling a gap between the photoresist layer 2 and at least a portion of the reduction lenses 4, and a pattern detector 7 for positioning the reticle 5 and the sub-strate 1.
In operation, a positioning pattern formed on the reticle 5 and a positioning pattern 10 formed on the substrate 1 are first brought into alignment by means of the pattern detector 7 through the reduction lenses 4. An optical path 11 in this alignment process is shown by solid lines. Then, the reticle 5 provided with a predetermined magnified pattern is illuminated ~ ~ s~
1 by the illumination sys-tem 6 to form an optical pa-ttern image o~. the magnified pattern. This optical pattern image is reduced and ~rojected b~ the reduction lenses 4 upon the photoresi.st layer 2 coated on the semiconduc-tor substrate 1 to e~pose the photoresist layer 2. An optical path 12 in this process is shown by dotted lines. After the first exposure process, the wafer stage carrying the semiconductor substrate 1 is moved tstepped) and a next exposure field is exposed (i.e.
exposure is repeated) in the same manner as the first exposure process. By repeating the exposure process, a predetermined pattern is formed over the entire area of the substrate 1. The pattern forming apparatus 20 of the type as described above is usually termed a reduction projection aligner, and its general construction is referred to as STEP & REPEAT CAMERA, for the detail of which reference may be made to US patent No. 4,057,347.
The pattern forming apparatus 20, according to an embodiment of the present invention is featured by the use of the liquid layer 3 formed and sustained between the reduction lenses 4 and the photoresist layer 2 as has already been described above. The present embodiment defines the pattern forming apparatus 20 by the construc-tion wherein the semiconductor substrate 1 provided with the photoresist layer 2 and a portion or a whole of the reduction lenses 4 are immersed in the liquid layer 3. This liquid layer 3 contains a liquid which can transmit the optical pattern image, that is, 9 ~
1 opticall~ transparent and has a refractive index of more than i (one). Needless to say, the liquid should not be reactlve with materials of the reductlon lenses 4, photoresist layer 2 and semiconductor substrate 1, i.e.
should have chemically s-table characteristics. Examplified as the liquid of this nature are trichlorotrifluoroethane (C2C13F3), chloro~enzene (C6H5Cl~, and water.
In order to form and sustain the liquid layer 3, the liquid is filled in a pool 19 and the reduction lenses 4 and the semiconductor substrate 1 are disposed in the pool 19. Alternatively, in accordance with another embodiment 20' of the invention as shown in Fig. 3, a member 9 may be provided which surrounds the reduction lenses 4 and forms and sustains the liquid layer 3, and the sustaining memker 9 may be equipped with a nozzle 13. Liquid supplied to the nozzle 13 in a direction of an arrow 8 may be drawn out toward the semiconductor substrate 1. With this modification also, the reduction lenses 4 and the photoresist layer 2 are put in immersion in the liquid layer 3.
Acccrding to the foregoing embodiments, when the refractive index n of atmosphere ambient of the exposure system is varied to be more than 1 (one) under the condition that a high resolution reduction lenses 4 usable and available for this invention has a fixed value as defined by sin ~ = 0.28 at a wavelength ~ =
0.436 ~m, the resolution limit R is improved as shown in Fig. 4.
V
1 Speci ically, while the conventional exposure in air achieves a resolvable line width or resolution limit R of 0.95 ~m, the use of a liquid of, for example, n = 1.36 or n = 1.53 such as trichlorotrifluoroethane or chlorobenzene permits a drastic irnprovement of the resolution limit R to 0.69 ~m or 0.62 ~m.
When the refractive indices of the photoresist layer 2 formed on the substrate 1 and of the liquid layer 3 are made equal or almost equal, there occurs no or almost no such error in position detection, which is ascribed to the unevenness of the photoresist layer and has occurred in the conventional system upon detection of the pattern 10 by the position detector 7, even with a photoresist layer 2 having an uneven surface as shown in Fig. 2. In other words, the optical affect of the unevenness of the photoresist layer 2 can be eliminated essentially by melting the optical interface at the photoresist surface in an optically uniform medium, thereby ensuring a stable and highly precise pattern detection.
The present invention is also advantageous in that since the liquid used in the invention can be kept clean by, for example, distillation. It is expected that failure due to the deposition of dusts contained in air to the surface of the photoresist layer 2, which - would occur in the conventional apparatus, can be prevented. Especially, when forming a fine exposure field of less than 1 ~m line width with a reduction projection 1 aligner, difficulties have been encountered ln removing fine dusts contained in air ~,~'r.ich may otherwise be deposited to the ~ine pattern. But, such difficulties can advantageollsly be overcome by the present invention.
Further, since the liquid layer 3 has a larger heat capacity than air, the substrate l can be less affected by temperature variatlons in the course of exposure and possible alignment error due to in-plane distortion of the substrate can be prevented in advance.
While -the foregoing embodiments have been described by way of the reduction projection aligner, the present invention may also be applied advantageously to a 1 : 1 projection aligner for forming a pattern on a substrate, and a checker or a measuring instrument for a fine pattern on a substrate.
Claims (6)
1. A pattern forming apparatus for projecting a pattern which is formed on a reticle upon a photoresist layer on a substrate, comprising:
an illumination system for illuminating said pattern and forming an optical pattern image;
reduction lenses for projecting said optical pattern image at a certain reduction ratio upon the photoresist layer formed on the substrate for exposing the photoresist layer; and liquid sustaining means for filling a gap between at least a portion of said reduction lenses and said photoresist layer with an optically transparent liquid having a refractive index of more than 1 (one).
an illumination system for illuminating said pattern and forming an optical pattern image;
reduction lenses for projecting said optical pattern image at a certain reduction ratio upon the photoresist layer formed on the substrate for exposing the photoresist layer; and liquid sustaining means for filling a gap between at least a portion of said reduction lenses and said photoresist layer with an optically transparent liquid having a refractive index of more than 1 (one).
2. A pattern forming apparatus according to Claim 1, wherein said liquid has substantially the same refractive index as that of a material of said photo-resist layer.
3. A pattern forming apparatus according to Claim 1, further comprising a pattern detector interposed between said illumination system and said reticle for detecting the alignment of pattern between said reticle and said substrate.
4. A pattern forming apparatus according to Claim 1, wherein said substrate comprises a semiconductor substrate.
5. A pattern forming apparatus according to Claim 1, wherein said liquid sustaining means comprises a nozzle for drawing in the liquid.
6. A pattern forming apparatus according to Claim 1, wherein said liquid is trichlorotrifluoroethane or chlorobenzene.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37977/81 | 1981-03-18 | ||
| JP56037977A JPS57153433A (en) | 1981-03-18 | 1981-03-18 | Manufacturing device for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1159160A true CA1159160A (en) | 1983-12-20 |
Family
ID=12512621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000398647A Expired CA1159160A (en) | 1981-03-18 | 1982-03-17 | Pattern forming apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4480910A (en) |
| EP (1) | EP0060729B1 (en) |
| JP (1) | JPS57153433A (en) |
| CA (1) | CA1159160A (en) |
| DE (1) | DE3272511D1 (en) |
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| FR2474708B1 (en) * | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
-
1981
- 1981-03-18 JP JP56037977A patent/JPS57153433A/en active Granted
-
1982
- 1982-03-15 US US06/358,436 patent/US4480910A/en not_active Expired - Lifetime
- 1982-03-17 DE DE8282301377T patent/DE3272511D1/en not_active Expired
- 1982-03-17 EP EP82301377A patent/EP0060729B1/en not_active Expired
- 1982-03-17 CA CA000398647A patent/CA1159160A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0060729A2 (en) | 1982-09-22 |
| JPS57153433A (en) | 1982-09-22 |
| DE3272511D1 (en) | 1986-09-18 |
| EP0060729A3 (en) | 1983-03-16 |
| EP0060729B1 (en) | 1986-08-13 |
| JPS6349893B2 (en) | 1988-10-06 |
| US4480910A (en) | 1984-11-06 |
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