CA1164700A - Semiconductor laser source - Google Patents
Semiconductor laser sourceInfo
- Publication number
- CA1164700A CA1164700A CA000327933A CA327933A CA1164700A CA 1164700 A CA1164700 A CA 1164700A CA 000327933 A CA000327933 A CA 000327933A CA 327933 A CA327933 A CA 327933A CA 1164700 A CA1164700 A CA 1164700A
- Authority
- CA
- Canada
- Prior art keywords
- support
- laser source
- stamping
- laser
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/422—Active alignment, i.e. moving the elements in response to the detected degree of coupling or position of the elements
- G02B6/4226—Positioning means for moving the elements into alignment, e.g. alignment screws, deformation of the mount
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S29/00—Metal working
- Y10S29/037—Stamping with other step
Abstract
Abstract of the Disclosure The invention relates to laser sources using a semi-conduct chip from which the radiation is collected by an optical fibre. In accordance with the invention there is provided a laser source in which the support for the semiconductor chip and the optical fibre is metallic. The support is stamped with an impression comprising a seat for the semiconductor chip and it least one groove for accomodating the optical fibre. The invention, is applicable to radiation sources used in optical telecommunication systems.
Description
J~
This invention relates to laser radiation sources using a photoemissive semiconductor chip having two cleaved faces building up an optical cavity. When forward biassed this structure produces coherent radiation which is emitted through a very small rectangular aperture centered on the axis of the optical cavity.
In the case of a laser head, the radiation emitted is collected at the end of an optical fibre fixed to the support carrying the semiconductor chip.
To obtain accurate mounting t it is possible to use a silicon support in the surface of which have been etched both the seat for the semiconductor chip and the V-shaped recesses intended to receive the optical fibre and the coupling lens, if any, used to channel the radiation. The removal of heat by means of a silicon support is inadequa-te to enable the radiation source to operate at a high power level. In addition, this technique is relatively onerous because the production of the silicon support represents a substantial part of the price of an optical fibre laser head.
In order to obviate these disadvantages, it is proposed in accordance with the invention to mount the semi-conductor chip on a metallic support made of a cold-malleable material of high thermal conductivity. The seat for this laser chip and the recesses for the optical fibres are formed in a single operation by stamping the surface of the metallic support.
In accordance with the present invention, there is provided a semiconductor laser source comprising on a support a laser chip and at least one optical fibre for collecting the radiation supplied from said laser chip; said support being made of a cold-malleable metal of high thermal conduc-
This invention relates to laser radiation sources using a photoemissive semiconductor chip having two cleaved faces building up an optical cavity. When forward biassed this structure produces coherent radiation which is emitted through a very small rectangular aperture centered on the axis of the optical cavity.
In the case of a laser head, the radiation emitted is collected at the end of an optical fibre fixed to the support carrying the semiconductor chip.
To obtain accurate mounting t it is possible to use a silicon support in the surface of which have been etched both the seat for the semiconductor chip and the V-shaped recesses intended to receive the optical fibre and the coupling lens, if any, used to channel the radiation. The removal of heat by means of a silicon support is inadequa-te to enable the radiation source to operate at a high power level. In addition, this technique is relatively onerous because the production of the silicon support represents a substantial part of the price of an optical fibre laser head.
In order to obviate these disadvantages, it is proposed in accordance with the invention to mount the semi-conductor chip on a metallic support made of a cold-malleable material of high thermal conductivity. The seat for this laser chip and the recesses for the optical fibres are formed in a single operation by stamping the surface of the metallic support.
In accordance with the present invention, there is provided a semiconductor laser source comprising on a support a laser chip and at least one optical fibre for collecting the radiation supplied from said laser chip; said support being made of a cold-malleable metal of high thermal conduc-
- 2 -7e~
tivity; said support carrying a stamping having a ~lattened area and at least one groove; said stamping resulting from the permanent deformation of said cold malleable me~al; said laser chip being supported by said flattened area and said optical fibre being supported by the walls of said groove.
For a better understanding of the present in-vention, and to show how the same may be carried into effect, reference will be made to the following description in con-junction with the accompanying drawings, among which:
Fig. 1 is an isometric view of a semiconductor laser source.
Fig. 2 is an isometric view of a symmetrical die for stamping supports for laser sources.
Fig. 3 is a plan view of the support after stamping and before cutting.
Fig. 4 is an isometric view of a variant of the support for a laser head and of the optical elements which it serves to position.
Fig. 5 illustrates the successive steps involved in the formation of a die.
Fig. 6 illustrates a detail of a stamped support.
Fig. 1 shows a support 2 on the surface 1 of which has been formed an impression composed of a flattened area 3 actin~ as a seac for a laser chip 5 and of a V-shaped groove 4 acting as a recess for an optical fibre 7, 8. The laser chip 5 emanates from the collective production of a semi-conductor structure which is capable of emitting an optical radiation when an electrical current is passed through it in the forward direction. The faces of the chip 5 which are parallel to the plane oxy are cleaved and act as mirrors delimiting an optical cavity of axis oy. The laser emission 7q,~
of the chip 5 takes place through a small aperture 6 havlng a centre 0 on the axis oy. In order to obtain a good transfer of radiated energy, the core 8 of the optical fibre has to be centered on and aligned with the axis oy. The cladding 7 of the optical fibre and the groove 4 are thus dimensioned accordingly, taking into account the position of the seat 3 and the distance between the centre 0 of the aperture 6 and the supporting face of the laser chip 5. The end lO of the optical fibre 7, 8 is cut and positioned in such a way that the energy of the divergent beam emitted through the aperture 6 can be propagated in the core cf the fibre. To this end, the edge 9 and the trough-like shape of the seat 3 enable the chip 5 and the fibre 7, 8 to be precisely positioned at x and _. The positioning at z of the laser chip 5 and the optical fibre 7, 8 is obtained by forming the impression 3, 4 in a single stamping operation. To this end, the support 2 is made of a cold-malleable metal and the impression 3, 4 is obtained by means of a stamping tool provided at its end with an extremely hard die, as illustrated in Fig. 2.
The die 14 is formed for example by a block of tempered steel of which the upper part is machined symmetri-cally in relation to the direction z which is the direction in which the stamping force is applied. In order to obtain this symmetry, which ensures that the tool does not overhang during the impression transfer operation, two supports are simultaneously produced from a blank of metal having twice the necessary length. After stamping, the two supports are separated by cutting along the face 15 shown in Fig. 1.
The impression shown in Fig. l is obtained by means of the die 14 by machining a Vee ll twice as long as the required groove. The dihedron formed by the faces of 1~47i~ J
the Vee 11 may have for example an opening angle of from 70 to 120. The Vee 11 is symmetrically flanked by two coplanar lands 12. The dotted line 13 represents in highly exagger-ated form the depth of penetration reached during the stamp-ing operation. The stamping force is sufficient when the twolands 12 have flattened the surface irregularities of the support, although it may be increased to obtain a slight raised edge, enabling the laser chip 5 to be positioned at x and _. For example, it is possible with a copper support to obtain an impression measuring 7 mm2 with a stamping force of the order of 300 Newton.
Fig. 3 shows the impression obtained after cutting of the supports Al and A2 along Y-Y. On its surface 1, the blank 2 has two troughs 120 connected by a groove 110. It would also be possible to provide a groove 110 extending on either side of the troughs 120. This variant makes it possi-ble to utilise the radiation emitted by the two faces of the optical cavity of the laser chip 5. In this case, two opti-cal fibres are mounted on the support, one acting for example a~ an optical negative feedback loop. According to the invention, the die shown in Fig. 2 may be formed by providing a single land 12 flanked by two Vees' 11 or even by replacing the central Vee by two Vees' flanking the two lands 12 of the die 14.
Fig. 4 shows another variant of the laser source according to the invention. This variant differs from the variant shown in Fig. 1 in the presence of a fibre 16 and a recess 24 disposed between the seat 3 and the groove 4. The function of the fibre 16 is to focus the radiation emitted through the aperture 6 in order to collect as much energy as possible in the core 8 of the optical fibre 7, 8. The fibre '7q'~
16 which acts as a cylindrical lens produces an anamorphosis of the cross-section of the radiated beam.
The formation of a die capable of transferring the impression 3, 24, 4 in a single operation involves problems where it is carried out by conventional machining. However, a die such as this may be formed from a moulding support of silicon which reproduces the sunk impression visible in ~ig.
4. The silicon crystal is cut along a section (l, 0, 0).
The surface of the silicon block 31 is masked, as shown at (a) in Fig. 5. The mask 32 comprises rectangular apertures 33 of which the sides are oriented in directions of the assembly < 1, 1, 0 > . These apertures correspond to the various parts of the impression to be formed. Etching of the silicon produces a Vee-shaped or trapezoidal depression which 15 materialises the trough 3 and the grooves 4 and 24. Fig. 5 (b) shows the moulding support 31 freed from its mask 32 and covered by an electrolytic deposit of iron 34. After sepa-ration from the support 31, the electrolytic deposit 34 is subjected to a nitriding operation which is intended to harden the active faces 35 of the reverse impression.
Fig. 5 (c) shows the nitrided die ready for use.
As shown in Fig. 6, the profile of a groove may be trapezoidal with bases 111 or 112 separated by a vertical face acting as stop for the positioning of the fibre 7, 8.
The etching operation by which the silicon mould is ~ormed produces a perfectly flat seat for the laser chip 5 and like-wise inclined sides for the optical fibre 7, 8.
The most suitable materials for making the support are, in decreasing order of malleability, gold, silver, aluminium and copper. These metals have the high conduc-tivity required for removing the heat given off by the laser chip.
The technique which has just been described pro-vides without difficulty for an accuracy in the positioning of the laser and fibre of the order of one micron and for a S particularly favourable cost price.
By virtue of the heat-dissipating function of the metallic support, it is possible to produce laser sources of considerably higher power than laser sources produced from a silicon support. The surface condition and the preliminary machining of the metallic blank are in no way critical because stamping established all the conditions required for precise positioning in a single operation.
tivity; said support carrying a stamping having a ~lattened area and at least one groove; said stamping resulting from the permanent deformation of said cold malleable me~al; said laser chip being supported by said flattened area and said optical fibre being supported by the walls of said groove.
For a better understanding of the present in-vention, and to show how the same may be carried into effect, reference will be made to the following description in con-junction with the accompanying drawings, among which:
Fig. 1 is an isometric view of a semiconductor laser source.
Fig. 2 is an isometric view of a symmetrical die for stamping supports for laser sources.
Fig. 3 is a plan view of the support after stamping and before cutting.
Fig. 4 is an isometric view of a variant of the support for a laser head and of the optical elements which it serves to position.
Fig. 5 illustrates the successive steps involved in the formation of a die.
Fig. 6 illustrates a detail of a stamped support.
Fig. 1 shows a support 2 on the surface 1 of which has been formed an impression composed of a flattened area 3 actin~ as a seac for a laser chip 5 and of a V-shaped groove 4 acting as a recess for an optical fibre 7, 8. The laser chip 5 emanates from the collective production of a semi-conductor structure which is capable of emitting an optical radiation when an electrical current is passed through it in the forward direction. The faces of the chip 5 which are parallel to the plane oxy are cleaved and act as mirrors delimiting an optical cavity of axis oy. The laser emission 7q,~
of the chip 5 takes place through a small aperture 6 havlng a centre 0 on the axis oy. In order to obtain a good transfer of radiated energy, the core 8 of the optical fibre has to be centered on and aligned with the axis oy. The cladding 7 of the optical fibre and the groove 4 are thus dimensioned accordingly, taking into account the position of the seat 3 and the distance between the centre 0 of the aperture 6 and the supporting face of the laser chip 5. The end lO of the optical fibre 7, 8 is cut and positioned in such a way that the energy of the divergent beam emitted through the aperture 6 can be propagated in the core cf the fibre. To this end, the edge 9 and the trough-like shape of the seat 3 enable the chip 5 and the fibre 7, 8 to be precisely positioned at x and _. The positioning at z of the laser chip 5 and the optical fibre 7, 8 is obtained by forming the impression 3, 4 in a single stamping operation. To this end, the support 2 is made of a cold-malleable metal and the impression 3, 4 is obtained by means of a stamping tool provided at its end with an extremely hard die, as illustrated in Fig. 2.
The die 14 is formed for example by a block of tempered steel of which the upper part is machined symmetri-cally in relation to the direction z which is the direction in which the stamping force is applied. In order to obtain this symmetry, which ensures that the tool does not overhang during the impression transfer operation, two supports are simultaneously produced from a blank of metal having twice the necessary length. After stamping, the two supports are separated by cutting along the face 15 shown in Fig. 1.
The impression shown in Fig. l is obtained by means of the die 14 by machining a Vee ll twice as long as the required groove. The dihedron formed by the faces of 1~47i~ J
the Vee 11 may have for example an opening angle of from 70 to 120. The Vee 11 is symmetrically flanked by two coplanar lands 12. The dotted line 13 represents in highly exagger-ated form the depth of penetration reached during the stamp-ing operation. The stamping force is sufficient when the twolands 12 have flattened the surface irregularities of the support, although it may be increased to obtain a slight raised edge, enabling the laser chip 5 to be positioned at x and _. For example, it is possible with a copper support to obtain an impression measuring 7 mm2 with a stamping force of the order of 300 Newton.
Fig. 3 shows the impression obtained after cutting of the supports Al and A2 along Y-Y. On its surface 1, the blank 2 has two troughs 120 connected by a groove 110. It would also be possible to provide a groove 110 extending on either side of the troughs 120. This variant makes it possi-ble to utilise the radiation emitted by the two faces of the optical cavity of the laser chip 5. In this case, two opti-cal fibres are mounted on the support, one acting for example a~ an optical negative feedback loop. According to the invention, the die shown in Fig. 2 may be formed by providing a single land 12 flanked by two Vees' 11 or even by replacing the central Vee by two Vees' flanking the two lands 12 of the die 14.
Fig. 4 shows another variant of the laser source according to the invention. This variant differs from the variant shown in Fig. 1 in the presence of a fibre 16 and a recess 24 disposed between the seat 3 and the groove 4. The function of the fibre 16 is to focus the radiation emitted through the aperture 6 in order to collect as much energy as possible in the core 8 of the optical fibre 7, 8. The fibre '7q'~
16 which acts as a cylindrical lens produces an anamorphosis of the cross-section of the radiated beam.
The formation of a die capable of transferring the impression 3, 24, 4 in a single operation involves problems where it is carried out by conventional machining. However, a die such as this may be formed from a moulding support of silicon which reproduces the sunk impression visible in ~ig.
4. The silicon crystal is cut along a section (l, 0, 0).
The surface of the silicon block 31 is masked, as shown at (a) in Fig. 5. The mask 32 comprises rectangular apertures 33 of which the sides are oriented in directions of the assembly < 1, 1, 0 > . These apertures correspond to the various parts of the impression to be formed. Etching of the silicon produces a Vee-shaped or trapezoidal depression which 15 materialises the trough 3 and the grooves 4 and 24. Fig. 5 (b) shows the moulding support 31 freed from its mask 32 and covered by an electrolytic deposit of iron 34. After sepa-ration from the support 31, the electrolytic deposit 34 is subjected to a nitriding operation which is intended to harden the active faces 35 of the reverse impression.
Fig. 5 (c) shows the nitrided die ready for use.
As shown in Fig. 6, the profile of a groove may be trapezoidal with bases 111 or 112 separated by a vertical face acting as stop for the positioning of the fibre 7, 8.
The etching operation by which the silicon mould is ~ormed produces a perfectly flat seat for the laser chip 5 and like-wise inclined sides for the optical fibre 7, 8.
The most suitable materials for making the support are, in decreasing order of malleability, gold, silver, aluminium and copper. These metals have the high conduc-tivity required for removing the heat given off by the laser chip.
The technique which has just been described pro-vides without difficulty for an accuracy in the positioning of the laser and fibre of the order of one micron and for a S particularly favourable cost price.
By virtue of the heat-dissipating function of the metallic support, it is possible to produce laser sources of considerably higher power than laser sources produced from a silicon support. The surface condition and the preliminary machining of the metallic blank are in no way critical because stamping established all the conditions required for precise positioning in a single operation.
Claims (5)
1. A semiconductor laser source comprising on a support a laser chip having an emissive aperture and at least one optical fibre having a core for collecting the radiation supplied from said emissive aperture; said support being made of a cold-malleable metal of high thermal conductivity; said support carrying a stamping having a flattened area and at least one groove; said stamping resulting from the permanent deformation of said cold malleable metal; said laser chip being supported by said flattened area and said optical fibre being supported by the walls of said groove for bringing said core in centred relation-ship with said emissive aperture; the axis of the optical cavity of said laser chip being aligned with said core.
2. A laser source as claimed in claim 1, wherein said stamping comprises a flattened area in the form of a trough.
3. A laser source as claimed in claim 1, wherein said stamping comprises at least two grooves, one of said grooves being separated from said flattened area by the other of said grooves; a fibre acting as a cylindrical lens being positioned in the other of said grooves.
4. A laser source as claimed in any of claims 1, 2 or 3, wherein said groove has a triangular or trapezoidal profile opening towards the outside of said support.
5. A laser source as claimed in any of claims 1, 2 or 3, wherein said metal is selected from the group comprising gold, silver, aluminium and copper.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7814762 | 1978-05-18 | ||
| FR7814762A FR2426347A1 (en) | 1978-05-18 | 1978-05-18 | SEMICONDUCTOR LASER SOURCE AND ITS MANUFACTURING PROCESS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1164700A true CA1164700A (en) | 1984-04-03 |
Family
ID=9208400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000327933A Expired CA1164700A (en) | 1978-05-18 | 1979-05-17 | Semiconductor laser source |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4411057A (en) |
| EP (1) | EP0006042B1 (en) |
| JP (1) | JPS54150993A (en) |
| CA (1) | CA1164700A (en) |
| DE (1) | DE2966504D1 (en) |
| FR (1) | FR2426347A1 (en) |
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| FR2574566B1 (en) * | 1984-12-11 | 1987-01-16 | Thomson Csf | LIGHT EMITTING / RECEIVING DIODES AND INTEGRATED NON-RECIPROCAL OPTICAL TRANSMISSION ELEMENTS AND THEIR MANUFACTURING METHOD |
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| CA2869678A1 (en) * | 2012-04-11 | 2013-10-17 | Nanoprecision Products, Inc. | Hermetic optical fiber alignment assembly having integrated optical element |
| CN108701960A (en) * | 2016-02-15 | 2018-10-23 | 三菱电机株式会社 | Semiconductor laser light resource device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US436187A (en) * | 1890-09-09 | Die for making car-axle-box lids | ||
| US3840889A (en) * | 1973-07-11 | 1974-10-08 | Rca Corp | Laser diode package formed of ceramic and metal materials having high electrical and thermal conductivity |
| US4027521A (en) * | 1975-01-30 | 1977-06-07 | Trw Inc. | Apparatus for making terminal connectors |
| NL7505629A (en) * | 1975-05-14 | 1976-11-16 | Philips Nv | DEVICE FOR CONNECTING A LIGHT SOURCE WITH AN OPTICAL FIBER. |
| JPS523391A (en) * | 1975-06-27 | 1977-01-11 | Hitachi Ltd | Mount used for semiconductor laser |
| FR2317786A1 (en) * | 1975-07-11 | 1977-02-04 | Licentia Gmbh | Optical coupler between light conductor and semiconductor laser - has emitting surface at same height as conducting core with module set in path |
| NL180882C (en) * | 1976-05-31 | 1987-05-04 | Philips Nv | OPTICAL COUPLING ELEMENT AND OPTICAL COUPLING DEVICE WITH SUCH COUPLING ELEMENTS. |
| US4156206A (en) * | 1976-12-30 | 1979-05-22 | International Business Machines Corporation | Grating coupled waveguide laser apparatus |
| US4079404A (en) * | 1976-12-30 | 1978-03-14 | International Business Machines Corporation | Self-aligning support structure for optical components |
| US4186994A (en) * | 1978-04-21 | 1980-02-05 | Bell Telephone Laboratories, Incorporated | Arrangement for coupling between an electrooptic device and an optical fiber |
-
1978
- 1978-05-18 FR FR7814762A patent/FR2426347A1/en active Granted
-
1979
- 1979-05-10 EP EP79400294A patent/EP0006042B1/en not_active Expired
- 1979-05-10 DE DE7979400294T patent/DE2966504D1/en not_active Expired
- 1979-05-17 CA CA000327933A patent/CA1164700A/en not_active Expired
- 1979-05-18 JP JP6140379A patent/JPS54150993A/en active Pending
-
1981
- 1981-10-20 US US06/312,971 patent/US4411057A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2966504D1 (en) | 1984-02-02 |
| FR2426347B1 (en) | 1981-12-04 |
| EP0006042A1 (en) | 1979-12-12 |
| FR2426347A1 (en) | 1979-12-14 |
| US4411057A (en) | 1983-10-25 |
| JPS54150993A (en) | 1979-11-27 |
| EP0006042B1 (en) | 1983-12-28 |
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