CA1229411A - Stacked double density memory module using industry standard memory chips - Google Patents

Stacked double density memory module using industry standard memory chips

Info

Publication number
CA1229411A
CA1229411A CA000473184A CA473184A CA1229411A CA 1229411 A CA1229411 A CA 1229411A CA 000473184 A CA000473184 A CA 000473184A CA 473184 A CA473184 A CA 473184A CA 1229411 A CA1229411 A CA 1229411A
Authority
CA
Canada
Prior art keywords
chip
pin
chips
chip select
pins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000473184A
Other languages
French (fr)
Inventor
Wolfgang F. Mueller
Gwynne W. Ii Spencer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1229411A publication Critical patent/CA1229411A/en
Expired legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1029All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Stacked Double Density Memory Module Using Industry Standard Memory Chips Abstract A stacked double density memory module may be formed from two industry standard memory chips, by jumpering the no-connect and chip enable pins on one chip and then stacking the jumpered chip on the other chip with the pins on the jumpered (top) chip contact-ing the corresponding pins on the other (bottom) chip except for the chip select pins. In a preferred embodiment for use with 64K or one megabit DRAMs, the top chip is jumpered with a U-shaped strap which runs from the no-connect pin to the chip enable pin. The chip enable pin is bent toward the chip body to retain the strap in place. The technique may also be employed for stacking other industry standard memory or array chips.

Description

Docket No. FOE
~29~

Description Stacked Double Density Memory Module - Using Industry Standard Memory Chips Background of the Invention 1. Technical Field This invention relates to semiconductor memories or arrays and more particularly to a stacked double density memory module which uses industry standard memory chips.
Integrated circuit semiconductor memory chips are widely employed in data processing systems ranging from inexpensive home or personal computers to large main-frame systems. Integrated circuit memory chips, hereinafter referred to as memory chips or chips, comprise a packaged (encapsulated semiconductor memory array, provided with a plurality of input/output pins.
Presently, read/write memory chips, also referred to as Dynamic Random Access Memories Ides are available from many suppliers worldwide. The package dimensions and pin assignments for all memory chips having the same bit storage capacity are standardized, so that memory chips of the same bit storage capacity are interchangeable, regardless of the supplier.
One commonly used memory chip is the 64K DRY
The 64K DRUM stores approximately 65,000 bits of data and is widely available in dual-in-line plastic, ceramic or plastic/ceramic packages. Regardless of the supplier, all 64K Drams are interchangeable in that the package dimensions and pin assignments are standardized. In particular, the industry standard 64K
DRAM is available in a 16 pin package having the following pin assignments with the pins being numb red counterclockwise from the upper left corner ox the chip:
, ., .

.

Docket No. FOE
-2-Pin Numbers) Pin Function 1 No connect - unused 2 Data Input
3 Write Enable
4 Row Address Select-Chip Enable
5-7, 9-13 Address 8, 16 Power Supply 14 Data Output Column Address Select .
lo 2. Background Art In the quest for ever increasing storage density, computer designers have realized that stacked memory chips may be employed to double the storage density on a given printed circuit board. More particularly, since corresponding address, power supply, and data lines may be paralleled t two memory chips can be physically stacked upon one another with the bottom chip mounted on a printed circuit board or other second level package. Separate chip enable pin locations must be provided for each chip in order to select either the top or bottom chip. When stacked memory modules are employed, the memory storage density per printed circuit board unit area it effectively doubled. With this advantage in mind, the art has employed two basic Jo 25 approaches fox stacking memory chips while still providing separate chip select pin locations for the top and bottom chips:
lo Larger Printed Circuit Board Footprint:
Since two chip select paths are required at every pa stacked chip location on the circuit board, the chip select pin from the upper; and lower chips may be routed to two separate printed circuit board locations.
Thus, for example, two standard 16 pun Drams may be mounted in Ann pin socket, with the socket providing separate wiring paths for the chip enable pins from the ,: .

I:

`:

Docket No. FOE

top and bottom chips. Such an approach clearly wastes printed circuit board space because an 18 pin footprint is required for stacking two 16 pin chips. Moreover, a connector or housing for mounting the stacked D~21s is generally required in order to provide the wiring paths from 16 pins to 18 pins. A connector or housing also wastes space on the printed circuit board, increases cost, and decreases the reliability of the stacked module, thereby offsetting some of the advantages of lo stacked chips, 2. Customized Pin Assignments: The pin assign-mints of one or both of the chips may be rearranged from the industry standard to permit stacking. Thus, for example, in the 64X D l industry standard pin 15-assignment, pin 1 is a no-conneet (unused) pin and pin 4 is the row address select (chip enable) pin. Cuss atomized 64K DROP chips may be procured wherein pin 1 is the row address select (chip enable) pin and pin 4 is a Nanette (unused) pin. Then, an industry standard and customized 64K DRAM may be stacked. While such an approach does provide a 16 pin footprint on the printed circuit board, it will be understood that customized chips are much more expensive than industry standard chips because they are not available as off-the-shelf items. Accordingly, the increased cost of the non-standard chip offsets some of the advantage of stacked chips.
In conclusion, although the 64K DRY is widely used in personal, mini, and mainframe computers, and in non-eomputer oriented products such as video games, it has not been heretofore recognized that two 64K Drams may be sleeked to obtain a double density memory module, without increasing the printed circuit board footprint size, without rerolling the use of a socket or housing and without requiring customized pin assign-mints.

Docket No. FOE
I

Disclosure of the Invention It is therefore an object of the invention to provide a stacked double density memory module which uses the same size printed circuit board footprint as that of the individual chips.
It is another object of the invention to provide a stacked double density memory module which may be directly mounted on a printed circuit board, multi layer ceramic substrate or other second level package, without a connector or housing.
It is yet another object of the invention to provide a stacked double density memory module which employs two industry standard integrated circuit memory chips.
It is still another object of the invention to provide a method of stacking industry standard memory chips in a manner that is amenable to high volume manufacturing.
These and other objects are realized by a stacked double density memory module which comprises two industry standard chips each of which includes a no-connect (unused) pin and a chip enable (select) pin.
The no-connect and chip enable pins on the top chip are electrically jumper Ed. The chip select pin on the top chip is bent, or the end of the chip select pin is removed, so that the chip select pin on the top chip does not touch the chip select pin on the bottom chip when the two chips are stacked.
The jumper Ed (top chip is then stacked on the bottom chip with each pin on the top chip contacting the corresponding pin on the bottom chip, except for the chip select pins. The bottom chip may be mounted on a printed circuit boar or other second level package. Accordingly, for the stacked memory module, the industry standard no-connect pin position becomes the top chip select pin position. The bottom chip .

Docket No. FOE

select pin position is the industry standard chip select pin position.
For the 64K D described above, pins 1 (no-connect) and 4 (row address select) on the top chip are jumper Ed, and pin 4 is either bent or the end thereof is cut off. The chips are stacked with all pins touching except pins 4. For the stacked memory module, pin 1 becomes the top chip select while pin 4 becomes the bottom chip select.
In a preferred embodiment of the invention, for 64K Drams the row/address select pin, (pin 4) and the no-connect pin (pin 1) are jumper Ed by means of a metal U-shaped strap. Each end of the U-strap has a hole therein, and the dimensions of the U-strap are such that pins 1 and 4 fit into a respective one of the holes, with the body of the U-strap running along the body of the chip. After placement of the U-strap, pin 4 is bent toward the body of the chip to hold the U-strap in place. The upper chip is then placed on top of the lower chip and the assembly is dip or wave soldered in a conventional manner. The soldering process also solders the U-strap to pins 1 and 4.
The above descried double density memory module, and the above described process for fabricating the module permits industry standard 16 pin 64~ ~RP~1s to be stacked in a 16 pin integrated circuit board footprint.
A housing or connector is not needed. The individual process steps are conventional and the process adds little cost over the combined cost of the two 64K
Drams A double density memory module may thus be realized with insignificant cost or reliability impact.
It will be recognized by those having skill in the art that the invention may-be employed for stacking any DRAM chip, the industry standard pin assignment of 35 which includes a no-connect pin. Accordingly, the ; invention may be employed with one megabit Dripless, which have an 18 pin industry standard pun assignment .

Docket No. FOE
I
- r 6 including a no-connect pin. The invention may also be employed with any read/write or read only memory chip, as long as the industry standard pin assignment in-eludes a no-connect pin. Accordingly, the invention S may be employed or stacking static R~ls, ROMs (read only memories), Proms (programmable read only memories) and Eros (erasable programmable read only memories).
It will also be recognized that the invention may be ; applied to stack other array chips, e.g., programmable logic array chips, as long as -the industry standard chip pin assignment includes a chip select pin and a no-connect pin.
Indeed, it will be recognized that the stacked chips need not be identical chips, as long as both 15 -industry standard chips include a chip select pin and a no-connect pin, and the function of each pin position is the same on both chips (i.e., the same pin positions are employed for address, power supply, data, enable and the no-connect functions). Thus, for example, a ROM and a PROM may be stacked according to the invent lion. The stacked chips need not even have the same footprint size, as long as both chips include a chip select pin and a no-connect pin, and the function of each overlapping pin position is the same on both chips.
It will also be recognized that jumpering tech-nucleus other than as described above may be employed.
For example, a C, V or other shaped strap may be employed. Alternatively, the strap may be replaced by a wire wrap connecting the chip enable and no-connect pins. It will also be recognized that the jumper may be incorporated into a housing or connector to provide easy removability of the chips if desired.
I I

Docket Jo. FOE
3L~2~

Brief Description of the Drawings Fig. 1 illustrates a preferred embodiment of the top chip of a stacked 64K DRAM module according to the present invention.
fig. 2 illustrates a preferred er~odiment of a stacked double density 64K DRY module according to the present invention.
Fig. 3 illustrates the pin assignment of the stacked double density memory module of Fig. 2.
lo Detailed Description of the Invention .
Referring now to Fig. 1, the top chip of a stacked module according to the present invention is illustrate Ed Top 64K DROP chip 20 includes pins 1-16 which are labeled with reference to notch 21 according to the lo industry standard pin assignment outlined above. In the industry standard pin assignment, pin 1 is a no-connect, i.e., an unused pin, and pin 4 is the row address select pin which is the chip enable for the 64K
DRAM. According to the invention, pins 1 and 4 are 20 jumper Ed. As shown in Fig. 1, the jumper is a U-shaped metal strap 22 having holes 23 and 24 at respective ends thereof. The dimensions of U-strap 22 are such that holes 23 and 24 are aligned with pins 1 and 4, respectively. After the U-strap is inserted on pins 1 25 and 4 as shown, pin 4 is bent toward the DIP body as shown, in order to ensure that pin 4 does not touch corresponding pin 4 of the bottom chip when the chips are stacked, and also to ensure that U-strap 22-is held in place. In a preferred embodiment/ U-strap 22 is tin 30 played brass to provide compatibility with the tin plated chip pins and with' conventional lead-tin solders.
It will be recognized ho those having skill in the art that strap 22 may be in the shape of a C (semi-35 circle), V or otter shape, and that the strap may by .

.
` ` ' I: ' Docket No. FOE
I

placed on pins 1 and 4 so that the body thereof runs along the side or top of chip 20. It will also ye understood by those having skill in the art that strap 22 need not include holes 23 and 24. Rather, the ends of the strap may be abutted against pins 1 and 4 and pin 4 may be bent to hold the strap in place. Glue may also be employed to retain the strap in place against the chip prior to soldering.
It will also be recognized that rather than bending pin 4, the end thereof may be cut to ensure that it does not touch corresponding pin 4 of the lower chip when the chips are stacked. If pin 4 is cut rather than bent, glue may be employed to retain strap 22 in place. Finally, it will also be understood that a conductive wire may be wrapped around pin 1, routed underneath or on top of chip 20 r and wrapped around pin 4 to provide the requisite jumpering.
Referring now to Fig. 2, there is illustrated a stacked double density module 30 according to the present invention. Module 30 provides 12~K bits of storage. Top chip on is placed on bottom chip 25 so that the pins on top chip 20 touch corresponding pins on bottom chip 25, except for row address select pin 4.
Module 30 may thence dip soldered or wave soldered in a conventional manner. The soldering process also solders the conductive U-strap to pins 1 and 4. It will be understood by those having skill in the art that if a conductive strap without holes is abutted against pins 1 and on top chip 20, a high temperature solder process may first be employed to solder the strap to pins 1 and 4. Then the upper chip 20 and lower chip 25 may be stacked and soldered together using a low temperature solder process, thus ensuring that the strap is not disturbed.
It will also be understood that rather than soldering, an electrical connector or housing may be provided or mounting chips 20 and 25 therein. the , Docket No. FOE
` ~22~43L~
g housing may also include a built in jumper for elect tribally connecting pins 1 and 4 on top chip 20. Such a housing provides easy removability of the chips, at the expense of reliability and packaging density.
Fig. 3 illustrates the pin assignments for the 128K stacked memory module 30 according to the present invention. The pin assignments correspond to the industry standard 64~ DlWM pin assignments, except that pin 1 is now the top chip row address select (chip enable) pin while pin 4 is the bottom chip row address select (chip enable) pin. The module no longer in-eludes a no-connect pin position. The module may be mounted on a printed circuit board or other second level package in a conventional manner, with separate signet lines being routed to top chip row address select pin position 1 and bottom chip row address select pin position 4.
It will be understood by those having skill in the art, that the word "chip", as used herein, refers to one or more pieces of semiconductor material which comprise a memory array, encapsulated or packaged in plastic, ceramic or other material and provided with a plurality of input/output pins. The word "module", as used herein, refers to two chips stacked according to the present invention. It will be noted that other references sometimes use the words IT integrated circuit), LSI large scale integrated circuit), DIP
(dual-in-line package), or module, as synonymous for the word "chip" as used herein, and use the word chip to refer to the semiconductor material itself.
While the invention has been particularly shown and described with reference to a preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be 35 made without departing from the spirit end scope of the invention.

, -, . ... .

Claims (49)

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:
1. A method of forming a stacked double density memory module from first and second industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, in the same pin positions on said first and second chips, comprising the steps of:
jumpering the chip select pin and the unused pin on said first chip; and, mounting said first chip on top of said second chip with the pins on said first chip electrically contacting the corresponding pins on said second chip, except for the chip select pins.
2. The method of claim 1 wherein said first and second industry standard memory chips are 64K
RAMs.
3. The method of claim 1 wherein said first and second industry standard memory chips are one megabit RAMs.
4. The method of claim 1 wherein said first and second industry standard memory chips are read only memory chips.
5. The method of claim 1 wherein said first and second industry standard memory chips are program-marble read only memory chips.
6. The method of claim 1 wherein said first and second industry standard memory chips are erasable programmable read only memory chips.
7. The method of claim 1 wherein said first and second industry standard memory chips are program-mable logic array chips.
8. The method of claim 1 wherein said first and second industry standard memory chips are not identical.
9. The method of claim 1 wherein said first and second industry standard memory chips do not have the same number of pins; the plurality of address, power supply, data, chip select and unused pins being on the same pin positions on said first and second chips to the extent that the pin positions overlap.
10. The method of claim 1 wherein said jumpering step comprises the step of:
placing a conductive strap on said first chip, extending from said chip select pin to said unused pin.
11. The method of claim 1 further comprising the step of placing the second chip on a second level package.
12. The method of claims 2 or 3 wherein said chip select pin is the row address pin and wherein the unused pin is the no-connect pin.
13. The method of claim 10 wherein said placing step comprises the step of:
placing a conductive strap along the bottom surface of said top chip, extending from the chip select pin to the unused pin.
14. The method of claim 10 wherein said mounting step comprises the steps of:
bending the chip select pin on said top chip toward said chip so that it retains said conduc-tive strap in place; and, mounting said first chip on top of said second chip.
15. The method of claim 10 wherein said placing step comprises the step of:
placing a conductive strap having a hole at both ends thereof, along the bottom surface of said top chip, with the chip select pin extending through one hole and the unused pin extending through the other hole.
16. The method of claim 10 wherein said mounting step comprises the steps of:
removing the end of the chip select pin on said top chip; and, mounting said first chip on top of said second chip.
17. The method of claim 15 wherein said mounting step comprises the steps of:
bending the chip select pin on said top chip toward said chip so that it retains said conduc-tive strap in place; and mounting said first chip on top of said second chip.
18. The method of claim 15 wherein said mounting step comprises the steps of:
removing the end of the chip select pin on said top chip; and mounting said first chip on top of said second chip.
19. The method of claims 13 or 15 wherein said conduc-tive strap is a V, C, or U shaped strap.
20. The method of claims 13 or 15 wherein said conduc-tive strap is a wire.
21. A method of forming a stacked double density memory module from first and second identical industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, comprising the steps of:
placing a metal U-shaped strap, having holes at both ends thereof, along the bottom surface of said first chip, with the chip select pin extend-ing through one hole and the unused pin extending through the other hole;
bending the chip select pin in said first chip toward the bottom surface of said first chip to retain said metal U-shaped strap in place;
mounting the first chip on top of said second chip, with each pin on said first chip contacting the corresponding pin on said second chip except for the chip select pins; and, soldering the contacting pins on said first and second chips to one another and soldering the metal U-shaped strap to the chip select pin and the unused pin on said first chip.
22. The method of claim 21 wherein said first and second identical industry standard memory chips are 64K RAM chips, with the unused pin being a no-connect pin and the chip select pin being a row address select pin.
23. The method of claim 21 further comprising the step of mounting the second chip on a second level package.
24. A double density memory module comprising:
first and second industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, in the same pin positions on said first and second chips, with the pins on said first chip directly connected to the corresponding pins on said second chip, except for said chip select pins; and, a conductive strap connecting said chip select pin and said unused pin on said first chip.
25. The double density memory module of claim 24 wherein said jumpering means is a U, V or C shaped strap which runs from said chip select pin to said unused pin on said first chip.
26. The double density memory module of claim 24 wherein the chip select pin in said first chip is bent toward the first chip, so that the chip select pin on said first chip does not contact the chip select pin on said second chip.
27. The double density memory module of claim 24 wherein the end of the chip select pin on said first chip is removed so that the chip select pin on said first chip does not contact the chip select pin on said second chip.
28. The double density memory module of claim 24 wherein the pins on said first and second chip are soldered together.
29. The double density memory module of claim 24 wherein said first and second industry standard memory chips are 64K RAMs.
30. The double density memory module of claim 24 wherein said first and second industry standard memory chips are one megabit RAMs.
31. The double density memory module of claim 24 wherein said first and second industry standard memory chips are read only memory chips.
32. The double density memory module of claim 24 wherein said first and second industry standard memory chips are programmable read only memory chips.
33. The double density memory module of claim 24 wherein said first and second industry standard memory chips are erasable programmable read only memory chips.
34. The double density memory module of claim 24 wherein said first and second industry standard memory chips are programmable logic array chips.
35. The double density memory module of claim 24 wherein said first and second industry standard memory chips are not identical.
36. The double density memory module of claim 24 wherein said first and second industry standard memory chips do not have the same number of pins; the plurality of address, power supply, data, chip select and unused pins being in the same pin positions on said first and second chips to the extent that the pin positions overlap.
37. The double density memory module of claim 25 wherein said U, V or C shaped strap runs along the bottom surface of said first chip.
38. The double density memory module of claim 25 wherein said U, V or C shaped strap has a hole at each end thereof, with the chip select pin extending through the hole at one end and the unused pin extending through the hole at the other end.
39. The double density memory module of claim 28 wherein said retaining means is a plurality of solder connections between corresponding pins of said first and second memory chips.
40. The double density memory module of claim 28 wherein said retaining means is an electrical connector housing.
41. A double density memory module comprising:
first and second identical industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, said first chip being mounted on top of said second chip so that each pin on said first chip is in electrical contact with the corresponding pin on said second chip, except for said chip select pins; and, a metal U-shaped strap, having a hole at both ends thereof, mounted along the bottom of said first chip, with the unused pin extending through one hole in said strap and the chip select pin extending through the other hole in said strap, the chip select pin on said first chip being bent towards the bottom of said first chip to retain said strap in place.
42. The double density memory module of claim 41 wherein said first and second chips are 64K RAM chips, with the unused pin being a no-connect pin and the chip select pin being a row address select pin.
43. The double density memory module of claim 41 wherein said first and second chips are one megabit RAM chips, with the unused pin being a no-connect pin and the chip select pin being a row address select pin.
44. The double density memory module of claim 41 wherein said second chip is mounted on a printed circuit board.
45. A double density memory board comprising:
a circuit board having a plurality of chip mounting positions thereon;
a first plurality of industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, said first plurality of chips being mounted in at least some of the chip mounting positions on said circuit board;
a second plurality of industry standard memory chips, each of which includes a plurality of address, power supply and data pins, a chip select pin and an unused pin, in the same pin positions as said first plurality of chips, said second plurality of chips being mounted on top of at least some of said first plurality of chips, with each pin on said second chip being in elec-trical contact with the corresponding pin on said first chip, except for said chip select pins, each of said second plurality of chips including jumpering means for electrically connecting the chip select pin and the unused pin on the associ-ated one of said second plurality of chips.
46. The double density memory board of claim 45 wherein said first and second plurality of chips are 64K RAM
chips, with the unused pin being no-connect pin number 1 and the chip select pin being row address select pin number 4.
47. The double density memory board of claim 45 wherein said first and second plurality of chips are one megabit RAM chips.
48. The double density memory board of claim 45 wherein said circuit board includes at least one top chip select line routed to at least one of the unused pins in said first plurality of chips, and at least one bottom chip select line routed to at least one of the chip select pins in said first plurality of chips.
49. The double density memory board of claim 45 wherein said jumpering means is a conductive U-shaped strap having a hole at each end thereof, mounted along the bottom of said second chip, with the unused pin extending through one hole in said strap and the chip select pin extending through the other hole in said strap, the chip select pin being bent towards the bottom of said chip to retain said strap in place.
CA000473184A 1984-03-28 1985-01-30 Stacked double density memory module using industry standard memory chips Expired CA1229411A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59418484A 1984-03-28 1984-03-28
US594,184 1984-03-28

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CA1229411A true CA1229411A (en) 1987-11-17

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EP0157147A3 (en) 1987-09-09
EP0157147A2 (en) 1985-10-09
DE3566589D1 (en) 1989-01-05
ATE39032T1 (en) 1988-12-15
SG62489G (en) 1990-01-26
KR850006980A (en) 1985-10-25
US4884237A (en) 1989-11-28
IN165548B (en) 1989-11-11
JPH0131300B2 (en) 1989-06-26
EP0157147B1 (en) 1988-11-30
JPS60208850A (en) 1985-10-21
KR890004820B1 (en) 1989-11-27
HK99289A (en) 1989-12-22
BR8501293A (en) 1985-11-19

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