CA1277774C - Process for manufacturing thermal ink jet printhead and integrated circuit (ic) structures produced thereby - Google Patents

Process for manufacturing thermal ink jet printhead and integrated circuit (ic) structures produced thereby

Info

Publication number
CA1277774C
CA1277774C CA000543170A CA543170A CA1277774C CA 1277774 C CA1277774 C CA 1277774C CA 000543170 A CA000543170 A CA 000543170A CA 543170 A CA543170 A CA 543170A CA 1277774 C CA1277774 C CA 1277774C
Authority
CA
Canada
Prior art keywords
conductive trace
area
trace pattern
pattern
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000543170A
Other languages
French (fr)
Inventor
John L. Stoffel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of CA1277774C publication Critical patent/CA1277774C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1601—Production of bubble jet print heads
    • B41J2/1603—Production of bubble jet print heads of the front shooter type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1626—Manufacturing processes etching
    • B41J2/1628—Manufacturing processes etching dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/1631—Manufacturing processes photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Abstract

Abstract The specification describes a new and improved thermal ink jet printhead and fabrication process therefor wherein the heater resistors are formed on one area of an insulating substrate and relative large area electrical contacts are formed on an adjacent area of the insulating substrate. A barrier layer is formed over the conductive trace pattern defining the heater resistors on the one area, and a small via in this layer provides an electrical path between the large area electrical contacts and the conduc-tive track pattern, and thus provides a current drive path for the heater resistors. The small via provides minimum exposure of the barrier sidewall area and area of the con-ductive trace pattern and thus improve device reliability and fabrication yields and also improves electrical contact to the printhead Alternatively, the barrier layer may be made less than laterally coextensive with the conductive trace mater-ial to thereby leave a small area of the trace material available for metal overlay connection to the large area contact pad which is formed to the side of the conductive trace material.

Description

~277 77~
PROCESS FOR MANUFACTURING THERMAL INK JET PRINTHEADS
AND INTEGRATED CIRCUIT (IC) STRUCTURES PRODUCED THEREBY

Technical Field This invention relates generally to thermal ink iet printhead construction and more particularly to an im-proved integrated interconnect circuit extending between the printhead heater resistors and external pulse drive circuit-ry for supplying drive current to these heater resistors.

Backqround Art In the manufacture of thin film resistor (TFR) type of ther~al ink jet printheads, it is a common practice to photolithographically define the individual heater resis-tors on a TFR substrate by creating a pattern in an over-lying conducting trace layer. This layer is deposited in a predetermined pattern on the resistive heater material using known deposition techniques, The resistive heater layer material may, ~or example, be tantalum-aluminum, TaAl. The conductive trace pattern is most typically aluminium, al-though it could also be gold or other conductive material compatible with the other materials in the materials set for the printhead. After the conductive trace material or pat-tern is completed, it is then usually covered with an inert barrier layer such as a composite layer of silicon nitride and silicon carbide in order to protect the underlying layers from cavitation wear and ink corrosion.
In order to make electrical contact between this conductive trace material and external pulse drive circuitry for the printhead, one standard prior art approach involved etching a relatively large opening or via in the silicon nitride/silicon carbide composite barrier layer and then forming a relatively large contact pad in this opening to thus make contact with the underlying aluminum trace con-ductor material. Then, wire bonding or pressure contact connections could be made to this relatively large contact pad to provide an electrical current path into the aluminum trace material and to the ink jet heater resistors.
The above prior art structure is possessed with several disadvantages associated with the relatively large opening or via in the insulating barrier layer and directly over the aluminu~ conductlve trace layer. Tho ~irst of these disadvantages re~ides in the ~act that the large via in the silicon nitride/silicon carbide composite layer ex-poses a relatively large sidewall area of these materials.
This large area sidewall exposure means increasing the area in which pinholes or cracks might possibly occur and thus produce electrical shorts in the barrier layer. As a result of the dissimilarity of the silicon nitride and silicon carbide layers and the differences in their etch rates, there is produced a "diving board" geometry at the edge of these two dissimiliar insulating materials at the via open-ing. This stepped geometry, when coupled with the large area deposited contact pad in the via, increases the proba-bility of material defects in this region which are capable of reducing wafer processing yields.
Another disadvantage of the above prior art elec-trical interconnect approach involves exposing a relatively large area of the aluminum trace material in order to pro-vide the desired wide area contact pad thereover. The exposure of such a large area of aluminum trace material in the manufacturing process increases the possibility of form-ing aluminum oxide, A1203, on the conductive trace material and thus rendering it insulating or partially insulating instead o~ fully conducting.
Another disadvantage of using the above prior art approach resides in the increased probability o~ undercut-ting the silicon nitride and silicon carbide layers during the etching of the via therein. Again, such increased probability is caused by the expo8ure 0~ the relatively wide area sidewall o~ the silicon nitride/silicon carbide barrier defining the via.
Another disadvantage of using the prior art ap-proach described above relates to the ~ormation o~ a non-flat dish-shaped contact pad directly over the aluminum trace material. ~his geometry and structure increases the likelihood of scratching the edge of the printhead structure immediately ad~acent the conducting trace material, and such scratching in turn increase~ the likelihood of producir.g electrical shorts down through the printhead structure to the aluminum conductive trace material. In addition, the dish shape or non-planar contour of the contact pad makes it difficult to make certain types of electrical connections to the printhead structu~e, e.g. spring biased pressure connec-tions from a lead frame-type of flexible circuit.
A further disadvantage of using the above prior approach relates to the sensitivity o~ chipping and cracking at the edges of the multiple layers of materials over which the dish-shaped contact is placed. This chipping and crack-ing will cause corrosion of these materials at their outer edges, but this does not occur in devices manufactured by the present invention where the lead-in contacts have been removed from pressure contact at the edges of these interior layered materials.

~i~çLQ~yL~Lof Invention The general purpose of this invention is to pro-vide a new and improved integrated circuit interconnect structure for providing drive current to thermal ink jet printhead heater resistors and a high yie}d process for fabricating same. This interconnect structure is uniquely adapted and constructed for making good electrical connec-tions to spring biased pressure contacts, such as individual fingers or leads on a lead frame type of flexible or "flex"
circuit.
To accomplish this purpose, I have discovered and developed a pr$nthead structure and fabrication process therefor which includes forming a resistive layer on an insulating substrate and then ~orming a conductive trace pattern laterally coextensive with the resistive layer and 12777~,g extending only over a predetermined area of the insulating substrate. The conductive trace pattern has an opening therein defining a resistor heater element.
Next, an insulating barrier layer is formed atop the conductive trace material and extends down over the edges of the conductive trace material and the resistive layer and then out over a predetermined area of the adjacent insulating substrate. Then, a small via is formed in the insulating barrier layer and over the conductive trace pattern, so that a subsequently deposited metal overlay pattern may be extended from into the via and then out over the adjacent area of the insulating substrate where no conductive trace material extends. In this manner, the interconnect metal in this latter area provides a relatively large and flat electrical contact area for spring biased contacts.
And, the electrical connection to the conductive trace pattern is only through the relatively small via in the barrier layer where the area o~ edge expo~ure in the barrier layer and the area of conductive trace material exposure is mainted at a minimum.
Various aspects of the invention are as follows:
A proces~ for fabricating a thin film resigtor printhead structure which includes:
a. forming a resistive layer on an insulating substrate and a conductive trace pattern located on the resistive layer and having an opening therein defining a resistive heater element, b. forming an insulating barrier layer atop said conductive trace pattern, c. forming a via in said insulating barrier layer for receiving a metal overlay pattern in electrical contact with said conductive trace pattern, said via having a geometry which exposes a 1Z7~774 predetermined area of said conductive trace pattern and d. extending said metal ovèrlay pattern from said conductive trace pattern and through said via and down over an adjacent area of said insulating substrate, whereby the metal overlay pattern over said adjacent area of said insulating substrate provides a rèlatively large and flat electrical contact area remote from said conductive trace pattern for receiving a spring biased contact.
A thin film resistor printhead and interconnect structure including, in combination:
a. a resistive layer and a conductive trace pattern formed on a predete~mined area of an insulating substrate, and said conductive trace pattern having an opening therein de~ining a resistive heater element, b. an insulating barrier layer formed atop said conductive trace pattern and having a surface geometry which expose~ a predetermined area of said conductive trace pattern, and c. a metal overlay pattern extending from said conductive trace pattern and down over and on an adjacent area o~ said insulating substrate under which no conductive trace pattern appears, whereby the metal over said adjacent area of said insulating substrate provides a relatively large and flat electrical contact area for receiving a spring biased contact.
A thin film interconnect structure including, in combination:
a. a resistive layer and a conductive trace pattern formed thereon disposed on a predetermined area of an insulating substrate, and said ;~, 1m7~4 conductive trace pattern having an opening therein defining a resistive transducer element, b. an insulating barrier layer formed atop said conductive trace pattern and having a surface geometry which exposes a predetermined area of said conductive trace pattern, and c. a metal overlay pattern extending from said predetermined area of said conductive trace pattern and down over and on an adjacent area of said insulating substrate under which no conductive trace pattern appears, whereby the metal on said adjacent area of said insulating substrate provides a relatively large and flat electrical contact area for receiving an electrical contact.
The above and other advantages, novel features and alternative methods of construction of this invention will become better understood in the following description of the accompanying drawings.

~ie~ ri~~ ~8 Figure~ 1 through 7 illustrate, in schematic views, a series of thin ~ilm resistor process steps uti-;::

',` ~

12~m4 lized in fabricating a printhead interconnect structure according to the invention.
Figure 8 is an alternative embodiment of the in-vention wherein the barrier layers have been laterally re-duced to expose an edge portion of the underlying aluminum trace material for subsequent metal overlay thereon.

Be$t ~ode For Carrying Out The Invention Referring now to Figure 1, a substrate starting material 10 such as silicon is treated using either thermal oxidation or vapor deposition techniques to form a thin layer 12 o~ silicon dioxide thereon. The combination of th~
silicon substrate lO and the layer 12 of silicon dioxide will be re~erred to herein as the "insulating substrate"
upon which a subsequent layer 14 o~ resisltive heater material is depo~ited. Pre~erably, the layer 14 will be tantalum aluminum, TaAl, which is a well known resistive heater material in the art ot thermal ink jet printhead construction. Next, a thin layer 16 of aluminum is depos-ited atop the tantalum aluminum layer 14 to comp}ete th~
structure o~ Figure 1.
In the particular materials set described above for a preferred embodiment o~ the invention, the silicon-silicon dioxide combination 10, 12 was approximately 600 microns in thickness; the tantalum aluminum layer 14 was approximately 1000 angstroms in thickness; and the aluminum conductive trace material 16 was approximately 5000 ang-stroms in thickness. The resistor and conductor materials ~2~774 were magnetron sputter deposited. This materials set is generally well known in the art and is described, for example, in the Hewlett-Packard Journal, Vol. 36, No. 5, May, 1985.
Referring now to Figure 2, the structure shown therein was appropriately masked and etched with a suitable etchant in order to define the composite island 18 of tantalum aluminum 14 and aluminum 16 on the right hand side of the insulating substrate. As will become better appreciated below, the island 18 is formed on only a portion of the insulating substrate 10 and 12, leaving an area of the left-hand side of the substrate available for making good electrical contacts of the type to be described. Next, as shown in Figure 3, a pattern is etched in the aluminum layer 16 to form the opening 20 which define~ the lateral extent of a re~istive heater element 22 which i~ current driven by the conductive trace aluminum layer 16.
Next, as shown in Figure 4, a composite layer barrier material is deposited over the upper surface of the structure in this figure and includes a first layer 24 of silicon nitride which is covered by a second layer of highly inert silicon carbide. This composite layer (24, 26) barrier material provides both good adherance to the underlying materials and good insulation and protection against cavation wear and ink corrosion which the underlying layers beneath these materials 24 and 26 would otherwise receive during an ink jet printing operation.

127'm4 Next, as shown Figure 5, a relatively small via 28 is dry etched in the composite silicon nitride/silicon car-bide barrier layer using freon gas to thereby leave a small area 30 in the aluminum conductive trace material exposed for ~urther electrical contact. Such contact is made as shown in Figure 6 when a conductive lead-in or overlay pattern of conductors 32 and 34 are magnetron sputter deposited on the surface of Figure 5 and extend from into electrical contact with a relatively small area 30 of con-ductor trace material and then out onto the left hand side o~ the structure in Figure 5 and atop the previousl~
deposited barrier layer material. The combined thic~ness of the gold and tantalum layer~ is approximately 2 microns.
Thi~ conductivs lead-in compositQ structure in-cludes a ~ir~t layer 32 of tantalum and a second layer 34 of gold successively deposited in the geometrical configuration shown using conventional masking and metal evaporation tech-niques. Thus, the area 36 on the upper sur~ace of the gold layer 34 in Figure 6 extends over a relatively wide and flat area of the integrated structure and is located away from the aluminium conductive trace pattern previously de-scribed. Thia construction therefore enables a finger or spring lead contact member 38, which may be part of a larger lead frame member (not shown), to be brought into good ~irm pressure contact with the sur~ace area 36 o~ the gold layer 34 and without causing any detrimental ef~ect on the alumi-num conductive trace pattern. This larger lead frame member is described in more detail in U.S. Patent No. 4,806,106 of Janet E. Mebane et al issued February 21, 1989 and assigned to the present assignee.
Finally, and of course prior to the application of the spring biased contact 38, a surface pattern of polymer material 40 is formed in the geometry shown in Figure 7 to a thickness of approximately 50 microns. This polymer material provides a protective layer or shield over the contact via 30 and over the electrical contact layers 32 and 34 extending down into contact therewith.
It will be understood that, for sake of brevity, only a single heater resistor and conductive trace connection therefor has been shown. However, in actual practice the printhead will have many of these heater resistors which will usually be symmetrically spaced in a rectangular pattern on one area of the insulating substrate.
Various modification~ may be made in the above described embodi~ent without departing from the scope of this invention. For example, in Figure 4, it may be preferable in certain applications to deposit layers 24 and 26 on only a predetermined area of the underlying aluminum trace material 16. Then, the tantalum and gold layers 32 and 34 would be deposited over an area of edge exposed aluminum trace material and down and out over the now-exposed silicon dioxide layer 12 on the left hand side of the device structure. Thus, in this modified embodiment as shown in Figure 8, the tantalum-gold composite layer 32', 34' on the now-exposed left ; hand sio2 layer 12 will serve as the electrical contact area for receiving the above spring biased leads or the like. The Si3N4/Si C composite layer 24', 26' is masked and etched so as to leave a small edge portion of the aluminium trace material 16' exposed to receive the tantalum layer 32' thereon as shown in Figure 8. And, . ~

as in Figure 7, there is a relatively wide area on the surface of the gold film 34' for receiving the spring biased lead contact 38'. Finally, and also as in Figure 7, the outer layer 40' in Figure 8 corresponds to the surface protection polymer layer 40 as indicated above with respect to Figure 7.

Industrial Ap~licability The present invention is used in the fabrication of printheads for thermal ink jet printers which serve as standard peripheral equipment for a variety of computers and the like.

Claims (5)

1. A process for fabricating a thin film resistor printhead structure which includes:
a. forming a resistive layer on an insulating substrate and a conductive trace pattern located on the resistive layer and having an opening therein defining a resistive heater element, b. forming an insulating barrier layer atop said conductive trace pattern, c. forming a via in said insulating barrier layer for receiving a metal overlay pattern in electrical contact with said conductive trace pattern, said via having a geometry which exposes a predetermined area of said conductive trace pattern, and d. extending said metal overlay pattern from said conductive trace pattern and through said via and down over an adjacent area of said insulating substrate, whereby the metal overlay pattern over said adjacent area of said insulating substrate provides a relatively large and flat electrical contact area remote from said conductive trace pattern for receiving a spring biased contact.
2. A thin film resistor printhead and interconnect structure including, in combination:
a. a resistive layer and a conductive trace pattern formed on a predetermined area of an insulating substrate, and said conductive trace pattern having an opening therein defining a resistive heater element, b. an insulating barrier layer formed atop said conductive trace pattern and having a surface geometry which exposes a predetermined area of said conductive trace pattern, and c. a metal overlay pattern extending from said conductive trace pattern and down over and on an adjacent area of said insulating substrate under which no conductive trace pattern appears, whereby the metal over said adjacent area of said insulating substrate provides a relatively large and flat electrical contact area for receiving a spring biased contact.
3. The structure defined in claim 2 wherein a small via is made in said insulating barrier layer to expose said conductive trace pattern for connection to said metal overlay pattern.
4. The structure defined in claim 2 wherein said insulating barrier layer is formed of smaller lateral dimension than said conductive trace pattern to thereby leave an edge area of said conductive trace pattern exposed to receive said metal overlay pattern in electrical contact therewith.
5. A thin film interconnect structure including, in combination:
a. a resistive layer and a conductive trace pattern formed thereon disposed on a predetermined area of an insulating substrate, and said conductive trace pattern having an opening therein defining a resistive transducer element, b. an insulating barrier layer formed atop said conductive trace pattern and having a surface geometry which exposes a predetermined area of said conductive trace pattern, and c. a metal overlay pattern extending from said predetermined area of said conductive trace pattern and down over and on an ajdacent area of said insulating substrate under which no conductive trace pattern appears, whereby the metal on said adjacent area of said insulating substrate provides a relatively large and flat electrical contact area for receiving an electrical contact.
CA000543170A 1986-08-28 1987-07-28 Process for manufacturing thermal ink jet printhead and integrated circuit (ic) structures produced thereby Expired - Lifetime CA1277774C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US902,287 1978-05-01
US06/902,287 US4862197A (en) 1986-08-28 1986-08-28 Process for manufacturing thermal ink jet printhead and integrated circuit (IC) structures produced thereby

Publications (1)

Publication Number Publication Date
CA1277774C true CA1277774C (en) 1990-12-11

Family

ID=25415615

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000543170A Expired - Lifetime CA1277774C (en) 1986-08-28 1987-07-28 Process for manufacturing thermal ink jet printhead and integrated circuit (ic) structures produced thereby

Country Status (6)

Country Link
US (1) US4862197A (en)
EP (1) EP0258606B1 (en)
JP (1) JP2960065B2 (en)
CA (1) CA1277774C (en)
DE (1) DE3782700T2 (en)
HK (1) HK128393A (en)

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EP0258606A3 (en) 1989-07-26
US4862197A (en) 1989-08-29

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