CA1312672C

CA1312672C - Electron beam memory system with ultra-compact, high current density electron gun

Info

Publication number: CA1312672C
Application number: CA000544068A
Authority: CA
Inventors: Albert V. Crewe
Original assignee: ELECTRON BEAM MEMORIES
Current assignee: ELECTRON BEAM MEMORIES
Priority date: 1986-08-11
Filing date: 1987-08-10
Publication date: 1993-01-12
Anticipated expiration: 2010-01-12
Also published as: WO1988001424A1; US4760567A

Abstract

Abstract of the Disclosure A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc.
The gun has ultra-compactness and extremely low mass, yet is capable of developing a finely focused electron beam probe at high beam current densities.
The gun comprises a low-mass field emission cathode, the cathode having an emitting tip and being adapted to receive a predetermined electrical potential to form a high brightness electron source at the tip.
An electrostatic focus lens forms a real image of the electron source in the vicinity of the storage medium. The lens comprises a first electrode adapted to receive a predetermined second electrical potential which is positive relative to the potential on the tip and has a value effective to extract electrons from the tip. The electrode defines a relatively small aperture for deforming the diameter of an electron beam which is formed. A second electrode located downbeam of the first electrode is adapted to receive an adjustable third, focusing, electrical potential which is negative relative to the second electrical potential, and said second electrode having an aperture which is larger than the first electrode aperture. A third electrode located downbeam of the second electrode is adapted to receive a fourth, accelerating, electrical potential which is positive relative to the third potential for accelerating the beam, the third electrode having an aperture which is also larger than said first electrode aperture. The second, third and fourth electrical potentials are selected to establish beam-focusing fields between said first and second and between said second and said third electrodes. The gun has an ultra-low mass in order to make feasible rapid random accessing of any area of the storage medium.

Description

` -~312672 ~ackground of the Invention Prior Elec-tron Beam Memory SYstems The technological society in which we live appears -to have an insatiable appe-tite Eor the storage of da-ta, but there is a significant mismatch between the amount of data (particularly in digi-tal form) and the devices currently available to s-tore such data.
Examples of the need for digital storage are not difficult to find. Computer programs of l0-l00 megabytes are not uncommon~ To simply record social data in our population of 250 million people might require l06 megabytes of storage. Images of various forms need considerable storage capaci-ty -- a single television frame may require two megabytes while a full color page of a maga~ine needs 10 -times that amount. A year's supply of images from a single LANDSTAT satelli-te system has been estimated at l015 bits.
It is also very apparent that the new Fif-th Generation Computer will require a vast data base for its effective implemen-tation. One might consider a base as large as the Library of Congress with perhaps 1016 bits.
Presently available data storage devices are totally inadequate to store this volume of digital information. For example, a magne-tic hard disc system can typically store abou-t 4 x l09 bits of information. Optical disc systems can store in the ~ order of 5 x l0 10 bi-ts. There is an obvious need, then, for a system which could store 101~ bi-ts or more of information in digi-tal form.
There are also substantial benefi-ts which are no-t quite so apparent. For example, the ~3~ ~672 existence of a vast memory on line would obvia-te des~roying interim data and would allow its retrieval a-t any time. In such areas as image processing for a program development, this could be a very substan-tial benefit.
It is perhaps obvious that in order to develop memories of substantially greater storage capacity, resort must be had -to the use of electrons or other charged particles with wavelengths less than 0 the wavelength of ligh-t, or a system which does not depend upon radiation. Visible ligh-t is entirely inadequate; optical storage systems are already close to the wavelength limit of visible light.
Electron beam recording and retrieval of 1~ information has been explored for many years in laboratories and in some cases, prac-ticed commercially, In -the television field, there has been developed the now-commercial diffraction-type optical projection sys-tem in which electros-tatic charges are deposi-ted by an elec-tron beam on a thermally soEtenable tape. Upon heating of the tape, the surface of the tape is deformed in accordance wi-th the patt,ern of electrostatic charges. The television picture informa-tion stored on the surface-~5 deformed -tape is displayed by projecting a coherent beam of light through the transparent tape and spatially filtering the information diffracted by the surface deformations (Rl, R2). An exhaustive treatment of television recording is given by Abramson (R2A).
Ano-ther approach is disclosed in -the literature which follows this same general elec-tron recording beam technique, but electron beams are used to read out the stored information by detection of 35 emitted secondary electrons IR3). The literature " ~3~2~72 ~lescribes a ~1mLIar (ilsc-basecl system which can be played mechanically, as well as by the use oE
elec-~ron beams to stimulate secondary emission from the thermoplastic medium (R4, R5, R6). There is also 5 disclosed the application of -the same -thermoplastic recording technique in a real-time disc, tape or drum mass memory electron beam reading/erasing system with simultaneous optical read-out in vacuum (R7).
O-thers have suggested using electron beam lO recording to make mechanically readable video disc grooves by using a laterally vibrated electron beam to form the grooves in the disc (R6, R8).
Electron beams have been used to read out the surface deformations formed on an 15 electrostatically deformed thermoplastic medium which has been negatively charged -to create an electron mirror at the medium surface (R9).
Substantial engineering efforts have been expended developing video disc recording and 20 retrieval technology -- mainly optical and mechanical, but also using electron beams. An electron beam recording system has been developed for making the masters for capacitance-based (mechanical) video disc systems (RlO). The prior art also 25 includes a technique for an archival electron beam accessed memory in which a high intensity electron beam selec-tively melts columnar bi-ts in a two-dimensional la-ttice supported by a -thin membrane (Rll).
It is clear-that a disc-based sys-tem is best for quick access to high density information.
In spite of the obvious need for an ultra-high density memory system and the obvious choice of electron beam radiation as the means by which the 35 information is stored, no practical elec-tron beam 1 3 1 ~

memory system has yet been developed because of the inability of the art to develop an electron gun having the requisite properties and capabilities.

Requirements of a Writing ~un for a Practical 5 Rapid Random Accessed Electron Beam Memory Sys-tem The wri-ting gun must be ul-tra-compact and have a mass of no more than a few hundred grams to make possible random accessing in a few seconds or less of any selected file or area on the disc. Rapid 10 random access to any disc file is necessary for making additions or corrections to files at any location on the disc. Further, since the gun or guns used to read out the information will inevitably have to have the capability of rapid random accessing of 15 any file or area of the target disc, -the writing electron gun, in order to be functionally and structurally compatible with the reading gun system, must also be movable relative to the disc.
The wri-ting gun must be ultra-compac-t also 20 for the reason -that it not physically interfere with the reading gun or guns which may be operating simultaneously with the writing gun. Because of the vast amount of information storable in an electron beam memory system, it will no-t be desirable in many 25 applications to permit the awaiting of storage of all information, which might take weeks or months, before any of the stored information can be accessed. Hence the need for a system with multiple reading and writing guns.
Further, the writing electron gun must be capable of developing a wri-ting probe current of sufficiently high current density to make possible surface ablation or other power-intensive no-develop recording. The advantage of no-develop recording is 3 11 2 ~ 7 '~

~hat the informat:ion recorcled can be read ou-t immediately without the need to devacuate -the system, develop the record medium, and re-evacua-te the system.
Yet, -the gun's accelerating voltage can be no more than a few kilovolts if undue beam penetra-tion and spreading is -to be avoided. Low voltages are desirable also in the in-terest of minimizing the bulk and mass of -the voltage insulating structures required and -thus minimizing 10 the size and mass of the gun.
The writing electron gun for a practical electron beam memory system mus-t also be capable of producing a writing probe having a diameter small enough to achieve the desired ul-tra-high recording 15 densities.

Limitations of Prior Electron Beam Memory Guns Render Them Usele.ss For the Contemplated Applica-tion It is most important to an appreciation of 20 the significance of the invention to understand why previous electron beam memory guns have failed to meet the minimum needs of a practical electron beam memory system. There have been a number of disc-based electron beam memory systems disclosed in the 25 literature in which the electron beam writing gun or head is movable. RCA has disclosed in the litera-ture a disc-type electron beam recording system for use in making video disc masters (R12, R10). In this system the electron probe diameter is said to be 4 microns 30 by .1 micron -- far -too large for use in the ultra-high density electron beam memory system with which this invention is concerned. The disclosed electron optical column is massive and adapted to be moved unidirectionally across -the master disc upon which ~312~

information is being recorded. The column is of far too great a mass and size to be usable in a system requiring a rapid random accessing writing head, Teldec discloses in the paten-t literature a system for recording video information on a disc which employs a movable electron beam head ~R6). The head is shown schema-tically, however the beam probe diameter is said to be 1 micron -- far too large for use in a practical ultra-high density electron beam memory system.
The prior art also discloses a number of disc-based electron beam memory systems employing stationary electron beam writing columns. A number optically read out the stored informa-tion (R13, R14, R15, R5). In every case the electron optical column is far too cumbersome to give the requisite rapid random access capability of -the commercially practicable electron beam memory system which I
contemplate. Also, in every case the requisite combination of high beam current density and small probe size is not taught.
The prior art li-tera-ture also discloses other systems which, while full details are not available, clearly appear to fall far short of the requisite capabilities in current density and probe size as well as compactness and low mass (R7, R16).
As will be discussed in more detail below, there is a basic incompatibility at rela-tively high electron beam current densities between the amount of electron curren-t which can be developed in an electron beam probe and its minimum diame-ter. This is due to space charge effects which become significant as the electron density of an electron beam probe increases. In 1978 I showed in a very general context that the effects of space charge in 8 ~3~2~7~

an electron beam can be representecl by a term proportional to the current, -the length of the system, and the :Eocal length and inversely proportional to the angle of convergence of -the probe 5 (R17). At the time I failed -to realize the implications of this work in electron beam memory systems. As I will describe, I now see in -the design of a practical electron gun for electron beam memory systems of the rapid random accessed type, -the 10 powerful implications of controlling the length of the gun's source--to-image distance.

Nor is an Electron Gun Having the Requisite Properties Available in Other Arts Typical scanning electron microscope electron optical columns are monolithic structures totally unsuited for rapid movement across an electron beam memory medium. Further, they -typically develop probe currents which would be, at best, marginal for 20 a practical high ra-te, ultra-high density electron beam memory system of the -type I contempla-te.
In recen-t years, as a result of -the developmen-t of field emission type electron gun~, of which development I was ins-trumental (R18, Rl9), a 25 scanning electron microscope wi-th a less cumbersome, single focusing stage was developecl (R20, R21, R22, R23, R24). The scanning electron microscope developments utilizing field emission guns represented a s-tep in the direction toward an 30 electron gun useful in an elec-tron beam memory sys-tem of the type I contemplate, however, even these guns fall far short of what is needed. Whereas they are of reduced size and mass, these guns are nevertheless too massive to be utilized in an electron beam system 35 having a rapid random accessing writing electron gun.

~3~.~2672 These guns also fall short of the minimum electron probe current needed in a no-develop high recording rate elec~ron beam memory system.
Electron bean lithography systems are capable of developing adequately high current densities in the electron beam probe, however, they are massive monolithic devices having no useful applicability in an electron beam memory system of the type I envision. They also operate with accelerating voltages which are far too high for this application. Reducing this voltage would impair performance.
I previously developed a very compact, low mass field emission electron gun having a magnetic focus lens for use in a rapid random accessing electron beam memory system. It is an ob~ect of this invention to provide an electron beam memory system having an electron gun with a mass significantly less than the gun of this earlier development for even faster access times -- a gun whose overall length is in the order of 1-2 centimeters or less, with a mass of less than 20 grams. An objective of 20 grams or less of mass rules out electron guns with a magnetic focus lens due to the mass of the focus coil and associated support structures.
Electrostatic gun systems are inherently simpler and less massive than guns with magnetic focusing.
Focusing is accomplished by varying the potentials on metal electrodes rather than by establishing a magnetic field in an iron circuit using a copper coil of wire. The reduced mass of an electrostatic gun means that such guns can be more quickly moved by a given applied force. In addition, the voltages one needs to apply usually bears some ~L3~2~7~

simple relationship to one another, making possible the use oE the simple voltage divider to provide the necessary potentials for -the gun. In the case of electron guns with a field emission cathode and magnetic Eocusing, a voltage source is needed to establish the electron beam as well as a current source to establish the magnetic focusing field.
Electros-tatically focused guns have the further attribute of requiring very little or no power for performing the focusing of the beam.
Further, it is possible to obtain very short focal lengths wi-th electrostatic lenses.
The disa~vantages of electrostatic lenses are that voltages must be distributed in the kilovolt 15 range to several closely spaced electodes, with the possibili-ty of electrical arcing between the electrodes. Importantly, the aberration coefficients are always considerably higher for electrostatic lenses than for magne-tic lenses. This latter 20 shortcoming means that the angular extent of the electron beam must be limited. That in turn means that the intensity of -the probe current must necessarily ~e lowered. For an electron beam reading gun, this limitation may not be a disadvantage, but it 25 imposes severe limitations for an electron gun used for information writing purposes where no-develop recording is essential.
The gun of -this invention utilizes a three-electrode electrostatic focus lens of the so-called 30 "Einzel" type. In general terms, three electrode Einzel electrostatic lenses are well known in cathode-ray tubes and other electron beam devices unrelated to this invention. I know of an electron microscope manu~actured by Siemens Corporation having 35an Einzel type lens; however, that system lacked the ~3~7'~

compactness, ultra-low mass, high beam intensi-ty and small probe si~e described and claimed herein.
In conclusion, I am not aware of any devices or disclosures either in the field of electron beam memory systems, or any o-ther field, of an electron gun having the aforedescribed properties and minimum capabilities necessary for use in a rapid random accessed electron beam memory system.

Prior Art References A. Referenced above:
15 R l - USP 3,113,179 R 2 - USP 3,116,962 R 2A - A Short History of Television Recording, A. Abramson, JSMPTE Vol~ 82, March, 1973, pages 188-198 R 3 - USP 3,168,726 20 R 4 - USP 3,750,117 R 5 - USP 3,952,146 R 6 - USP 3,737,598 R 7 - USP 3,239,602 R 8 - USP 3,842,217 25 R 9 - USP 3,278,679 R 10- USP 4,010,318 R 11- Target Design of an Archival Electron Beam Memory, J. Wolfe, J. App. Phys. 53 (12), Dec., 1982, pages 8429-8435 30 R 12- USP 4,074,313 R 13- USP 3,381,097 R 14- USP 3,361,873 R 15- USP RE: 30,97g R 16- USP 4,0nl,493 5 R 17- "Some Space Charge Effects in Electron Probe Devices" Optik, A.V. Crewe, 52 (1978/1979) No. 4, 337-346 12 ~312~2 r~ 18- "Electron Gun ~sing a Fielcl Emission Source", A. V. Crewe, Rev. Sci. Ins-tru., Vol. 39, No.
4, 576-583, Apr., 1985 R 19- "A High Resolution Scanning Electron Microscope", A. V. Crewe, Jour. App. Phys., Vol. 39, No. 13, 5861-5868, Dec., 1968 R 20- "Dramatic ~esk-Type S.E.M. Performance Upgrade; Real-Time Energies with a lOOA
Resolution", Jour. of Elec. Eng. (Japan), Mov/Dec., 1975 (page unknown) R 21- "Field Emission Scanning Electron Micro-scope - S310A" (Sales Brochure, 7 pages, Hitachi, I.td., Tokyo, Japan) R 22- USP 4,274,035 R 23- USP 4,020,353 R 24- USP 4,099,055 R 31- USP 3,978,338 R 32- USP 4,534,016 B. Not Referenced Above:
R 25- USP 4,427,886 R 26- USP 3,731,095 R 27- USP 3,786,2~8 R 20- Recent Advances in Electron Beam Memories, J.
Kelly, in Advances in Electronics and Electron Physics, ed. by L. Morton, Academic Press, 1977 R 30- USP 4,245,159 R 33- USP 3,626,184 R 34- USP 3,350,503 R 35- USP 3,278,679 R 36- Field Emission Scanning Electron Microscopes wi-th Parallel Plate Gun Electodes, R. Shimizu et al, Scanning Electron Microscopy/1973 (Part I), Proc. of the Sixth Annu~l Scanning Electron Microscope Symposium, pp. 73-79 ~3~L2~72 Object of the Invention It is an object of this inven-tion to provide an electron beam memory sys-tem having an electron gun capable, for the first time, of high enough electron probe current densities to permit no-develop recording and small enough probe sizes to permit ultra-high density recording, yet of low enough mass to make feasible rapid random accessing of any area on the system's recording medium.
It is an object of this invention to provide a rapid random accessed electron beam memory system having an electron gun which is capable of developing electron beam probe current densities high enough to make feasible abla-tive or other no-develop recording a-t rates of lO megahertz and above~
I-t is another object of thi.s inven-tion to provide a rapid random accessed electron beam memory sys-tem having an electron gun which achieves such current levels using accelerating voltages of no more 20 than a few kilovol-ts.
It is still another object to provide a rapid random accessed electron beam memory system having an elec-tron gun which is also capable of producing at such minimum probe currents and maximum 25 accelerating voltages electron beam probe diame-ters of 500 angstroms or less in order to make feasible recording densities of at least lO14 bits of information on a 12 inch disc.
It is yet another object to provide a rapid 30 random accessed electron beam memory system having an elec-tron gun which is capable of these achievements, and yet which is ultra-compact and has a mass of only 20 grams or less in order to make feasible accessing of any selected file or area on the ~3~2~72 l~

recording medlum within 1-2 seconcls or less.
I-t is an objec-t to provide such a gun useful in a variety of electron beam clevices in which compactness, low voltages, rela~ively high beam currents and small prohe diameters are desired or required.
It is s-till another objec-t to provi.de an e~tremely compact and low mass field emission electron gun of the electrostatic type for use in a variety of electron beam devices, having a novel set of parameters endowing it with a mass of less than 20 grams, ye-t rendering it capable of producing a relatively high intensity, but very small electron beam probe.
It is an object-to provide such a gun which is useful for either writing or reading of information in an electron beam memory system.

Brief Descri.ption of the Drawings FIGURE .1 is a highly schematic illustration of an electron beam memory sys-tem constructed according to the teachings of the present invention;
FIGURE 2 is a perspec-tive, partly sectioned view of a head constituting part of the FIGURE 1 system and containing a writing or reading electron gun implementing an aspect of the presen-t invention;
FIGURE 3 is a sectioned side eleva-tion view of the electron beam memory system head and electron gun shown in FIGURE 2;
FIGURE 4 is a diagram illustrating the manner in which integrated deflection and/or stigmatizing coils are wound on a mandrel constituting part of the FIG~RES 2-3 gun;
FIGURES 5A, 5B and 5C are diagrams showing the manner in which an elec-tron beam is deflected 13~2~72 ~asing integra-ted deflec-tion coils constituting part of the FIGURES 2-3 ~un; and FIGU~ES 6-10 are diagrams depic-ting certain operating characteristics o~ the FIGURES 2-3 gun.

Deserip-tion of the Preferrecd Embodiment The electron gun aecording to the present invention has numerous uses in applica-tions receiving or desirably utilizing ultra-compaetness, extremely low mass and a relatively high current densityO The most promising application envisioned is an electron beam memory system.
FIGURE 1 is a schema-tic view of an electron beam memory system 10 embodying the present invention. The FIGURE 1 system 10 is shown as ineluding a vacuum enelosure, depie-ted sehematieally in dotted line form a-t 12. Within -the enelosure is a storage medium 13 supported on a rota-table dise 1~.
The dise 14 is rotated by a clise drive shown sehematieally at 16.
In nearly all dise-type eleetron beam memory sys-tems diselosecd in the prior art, the electron optical head or eolumn is monolithic and immovable, requiring that the turn-table be translatea wi-thin the vaeuum enelosure. Vacuum compa-tibility for such drive systems introduces lubrication and other problems. In the present system, the drive 16 is stationary and is therefore preferably loea-tecl outside the vaeuum enelosure 12. Further, compared with a system in which the turntable is moved, the vacuum enelosure volume is greatly reduced.
The eleetron beam memory system 10 includes a plurality of eleetron beam heads adapted for simultaneous operation. In -the illus-tra-ted ~3~2~

em~odiment, I have sho~n three heads -- a writing head 1~ containing an electron gun Eor recording information, a veriEication head 19 containing an electron gun for verifying -the fac-t and integrity of 5 the stored inFormation, and a reading head 20 containing an electron gun or retrieving -the stored information.
The electron beam memory system 10 is illustrated schematically as including head drives 21, 22, 23 in-terconnected with the heads 18, 19, 20 by support arms 24, 25, 26 for moving the heads 18, 19, 20 across the disc 14O
Au~illiary elec-tronic and electrical apparatus, shown schematically at 27, provides -the 15 necessary drive signals through conduc-tors 28, 29, 30 for energizing head drives 21, 22, 23. Appara-tus 27 also supplies through conductor 31 suitable drive signals for disc drive 16, as well as the necessary heater current for the field emission source heater 20 and energization potentials for the gun electrodes through bundles of conduc-tors 33, 34, 35.
FIGUR~ 2 illustrates a writing elec-tron gun 36 contained within writing head l8. As will be described, the FIGI~RE 2 gun is capable of developing 25 a finely focused electron beam probe at high beam current densities, yet is ultra-compact and oE
extremely low mass. For the firs-t -time, -the electron gun o:E this invention makes possible a truly random accessed electron beam memory system for high rate, 30 ultra-ligh density electron beam data recording, and yet with recording power making possible no-develop recording, i.e., recording without the need for developing the recording medium after exposure. With the writing elec-tron gun according to this invention 35 a very high capaci-ty electron beam storage medium can L7 ~2~72 be employed using multiple accessory veri:Eication ancl reading heads to permit simultaneous recordi.ng and readi.ng over long periods o.E time -- a cri-tically important capability for a great many applications.
As noted above, because of the vast storage capability of an electron beam memory system such as this, it may be to-tally impractical in many applica-tions -to delay access to the memory until the memory is filled (which could take weeks or months), 10 during which time the stored information is inaccessible.
An electron beam memory system becomes truly universally useful only when it has the capability as is now provided by this invention, to 15 record without any development of the medium using a rapid random accessing head and with simultaneously operable pick-up heads for verifying and~or retrieving the stored information as soon as it is recorded.
Before engaging in a detailed discussion of the FIGURE 2 electron gun practicing this invention, I will first discuss in general terms the performance requirements imposed on a writing gun of an electron beam memory system of the character described herein.
25 A few of the performance, packaging and other requirements imposed on the gun are, in general terms, as follows: (l) as stated, the gun must be o:E
sufficient compactness and low mass as -to be readily capable of being rapidly accelerated and decelerated 30 to effectua-te a rapid random accessing of the electron beam memory medium; (2) the gun must be capable of producing an extremely :Eine probe to permit ul-tra-high density recording on the mediun);
(3) -the probe produced must no-t only be extremely 35 Eine, but mu~t have high current densities, in order ~3 ~2~ ~
.~

that no-develop recording can be achieved -- that is, recording characterized by an alteration of -the physical state of the recording medium which can be detected immediately after recording, as by use of an electron beam probe; (~ -the gun must be capable of working with relatively low accelerating voltages in orcler that the beam penetration and spreading is not excessive, and so that the insulation requirements do not drive up the size and mass of the gun; (5) the head must have a modest power consump-tion in order that massive cooling structures are not required; (6) the gun must have an electron source which not only is extremely bright, but is also stable and of long life in order that the system 1n prac-tice is easy to use by operators of ordinary skill; and (7) the gun must have a commercially tolerable cost of manufacture.
The simplest way to effect an irreversible change in -the physical state of -the recording medium is to induce melting or boiling of -the recording material -to create a depression or pit in the medium.
The pit can be detected, for example, with a less-intense electron beam probe and accompanying means for detecting secondary, back-scattered or transmitted electrons.
The melting temperature "Tm" of a material can be approximated by-the relation Tm = 31_, where 2~ Ka "I" is the electron beam current in amperes, "V" is the beam vol-tage in volts, "K" is -the thermal 30 conductivity of -the material in joules per centimeter squared per second, and "a" is the radius of the heated zone in the recording medium in cen-timeters.
Using bismuth as the recording material, for example, having "K" = .02 and "Tm" = 27n degrees -- l9 --'- 131?)~72 centi~ra~e, and assuming a beam voltage "V" of 5 kilovolts and a heated zone "a" of .08 microns, then "I" - 160 nanoamperes. In practice, a temperature in excess of the melting point would be required in order to create a hole or pit.
Recording rates are limited by the rate at which the medium can be heated: Y = P~a2, where ~ is the specific heat and P is the density of the material. The recording rates for most materials and the probe diameters of interest is in the order of 10 8 to 10 10 seconds, allowing recording rates of 10 megahertz and above.
It was previously thought that current values in the range of 100-300 nanoamperes with accelerating voltages of 3-5 kilovolts, and a beam power in the range of 300-500 microwatts, for e~ample, would be required to produce melting in materials such as bismuth, tellurium, arsenides of such materials and mi~tures thereof.
Experiments conducted with the electron beam memory system described and claimed in my earlier system, however, have demonstrated that electron beam writing in such materials can be achieved at power density levels lower than indicated above.
As shown in FIGURES 2-3, an electron beam head/gun assembly in accordance with this invention is illustrated as including a vacuum manifold 38~
Electron gun assembly 36 is appended to the vacuum manifold 38 and develops an e~tremely fine electron beam probe 40 of sufficient current density to write (record) tracks 42 on the storage medium 13 on disc 14.
The electron gun assembly 36 comprises an e~tremely a~ially compact structure, all components ,. :, ~3~2~

of the gun being optimi2ed for axial compactness and minimi~ation of mass. As will be described, the series of structures making up the electron gun assembly 36 are all essentially ring-like elements of metal or ceramic adapted to be brazed together by well-konwn techniques to make an e~tremely rugged and hermetically sealed structure.
The electron gun of this invention preferably utilizes a field emission cathode, however, for some applications not requiring well-konwn current or brightness probe diameters, other high brightness sources~
such as heated lanthanum hexaboride, may be used.
The field emission cathode assembly comprises two metal rings 44, 46 between which is sandwiched a ceramic ring 48. The metal rings 44, 46 and ceramic ring 48 define circular apertures 52, 54 and 56 respectively. The rings 44, 46 are brazed to the ceramic ring; the metal ring 44 is welded to the vacuum manifold 38 to form a rigid hermetical seal therewith.
A filament 58 extends substantially diagonally across the apertures 52, 54, 56 formed in the rings 44, 4fi, 48 and has welded medially thereo a field emiss;on tip 60. The tip 60 is aligned on the electron optical axis of the gun. When properly excited, the tip 60 emits an extremely small but intensely bright source of electrons.
The metal rings 44, 46 serve as e~pedient terminals for the application of filament heating currents for use in applications wherein the field emitter is heated. The out-turned ends 6~, 64 of the ~ 3 ~

filament 58 are welded to the rings 44 and 46, respectively, from which rings the filament 58 may derive a source of appropriate elec-trical potential for extrac-ting electrons from -the tip 60. The use of rings 44, 46 as terminals for the application of heater currents has a decided advantage o~er bringing wire leads in -through the enclosure for the field emitter. They provide a mechanically rugged, hermetically sealed assembly and, of equal importance) large area terminals which serve to dissipate heater current heat over a large -terminal area, thus minimizing concern for failures of -the terminals due to overheating. The use of a filament extending diagonally across the openings, rather than 15 the common "hairpin" filament, has the :Eurther advantage of being less susceptible to vibra-tion.
The electron gun assembly 36 further includes an electros-ta-tic focus lens for forming a real image of -the electron source produced at the 20 field emission source in the vicinity of the recording medium 13. An elec-trostatic lens in accordance with this invention is illustrated as comprising a first electrode 66, a second electrode 68 and a third electrode 70. The first and second 25 electrodes are dished-disc electrodes. The third electrode is a flat-disc electrode. The electrodes are spaced from each o-ther by ceramic insulators 72, 74. The electrodes are spaced from -the field emission cathode assembly by a ceramic insulator 76.
The electrodes 66, 68 and 70 and the insulators 72, 74 and 76 are brazed together to define a mechanically sound, hermetically sealed assembly.
The field emitter is adapted to receive a 35 predetermined first electrical poten-tial effective to ~12~2 form a high brightness electron source a-t the tip 60.
The firs-t electrode 66 is adapted to receive a predetermined second elec-trode electrical potential which is positive relative to -the potential on the 5 tip 60 and has a value relative to the firs-t potential which is effective to induce emission of electrons from -the tip 60. The first electrode 66 has a very small aperture 78 for de-termining the diameter of the electron beam which is formed.
The second electrode 68 is adapted to receive an adjustable-third, focusing, electrical potential which is negative rela-tive to the aforesaid second potential applied to the first electrode 66.
The second electrode 68 defines an aperture 80 which 15 is much larger than the aper-ture 78 in electrode 66, as will be discussed in more detail hereinafter.
The third electrode 70 is adapted to receive a fourth, accelerating, elec-trical potential which is posi-tive relative to the potential applied 20 to the second electrode 68. The four-th potential determines the energy of the electrons to be brought to a focus. The third electrode 70 deEines an aperture 82 which is substantially larger than the aperture 78 in -the firs-t electrode 66, but smaller 25 than the aperture 80 in the serond electrode 68.
The second, third and fourth elec-trical potentials applied to the electrodes 66, 68 and 70 are selected to establish beam-focusing fields between -the first and second electrodes 66, 68 and 30 between the second and third electrodes 68, 70.
The enclosure defined by the firs-t electrode 66, the rings 44, 46 and 48 and the vacuum manifold comprise an ultra-high vacuum ~one Eor maintaining -the field emitter at an appropriate 35 vacuum level -- typically 10 9 to 10 10 torr. The - 23 ~ . 2 ~ 7 2 restricted size of the aperture 78 in the first electrode is selected, in part, with consideration for maintaining the high vacuurn in the zone containing the field emitter.
Because of the necessity of minimizing the magnification of the electron source formed by the field emitting tip 60, the magnification of the source at the storage medium 13 is preferably .5-2Ø The objectives of system compactness and small probe sizes implies the use of relatively short object and image distances. As will become evident, when the dimensions of the system are as described below, these objectives result in insufficient room at the exit of the gun to use conventional beam deflection and stigmatizing systems.
The electron gun assembly 36 includes an integrated beam deflection and stigmatizing system following the principles set forth and claimed in my èarlier system. The beam deflection/stigmatizing system is illustrated as comprising magnetic field generating means for establishing plural fields of magnetic flu~ through the electrostatic lens for modifying the position and cross-sectional shape of the beam. As shown in FIGURES 2-3, the magnetic field generating means comprises a system of magnetic windings 84 configured on an electrically insulative cylindrical sleeve-like mandril 86 surrounding the lens assembly.
The windings 84 are configured to provide both X and Y beam deflection as well as quadrupolar beam stigmatizing. The manner in which the windings B4 are wound is shown in the FIGURE 4 diagram. The system of windings 84 includes X and Y beam deflection coils configured to create beam deflection fields for effecting static and/or dynamic deflection 24 ~13~2~7~

of the beam as it passes through the lens.
The system of windings 84 is also configured to create stigma-tizing Eields extending through the electros-tatic lens and so deEined as to correct cross-sectional asymmetries of the beam as it passes through the lens.
FIGURES 5A, 5B and 5C depict schematically the manner in which elec-tron beam probe 40 is deflected within the electrostatic lens system itslf to effect movement of -the probe across the storage medium 13. It will be understood tha-t in operation of the electron beam memory system, the heads 18, l9, 20 are moved across the disc to attain the gross positioning of electron beam during reading or writing operations. Fine positioning of -the beam is achieved by use of the system of windings 84.
An electron beam deflection of only 10-20 microns is suEficien-t to span 100 -tracks -- a deflection completely adequate for recording or Eor locating and/or following or forming a particular track on -the storage medium 13. A more comple-te descrip-tion of -the illustrated integrated elec-tron beam deflection and/or stigmatizing system and its features and attributes are clescribed in my referent copending application Serial No. (EBM-5).
Achievement of the design objectives set forth above re~uire -the op-timization of a-t least the following sixteen differing parameters: the spacings (2), thicknesses(3) aperture diameters (3), outer radii(3) and potentials (3) of the electrode as well as the object and image distances (2).
Based largely on considera-tion of minimizing the spherical and chromatic aberration coefficients (the most significant factors), the following parameters are considered to be optimum for 2~ ~3~2~

the paticular sys-tem depic-ted. Other sys-tems would have a different set of parameters. They may be varied somewhat Erom the range of values to be given. The interelectrode spacings between first 5 electrode 66 and the second elec-trode 68 and be-tween the second electrode 68 and the third electrode 70 (measured surface to surface on the beam axis) are each preferably about ~5-2~0 millimeters.
The radius of the aperture 78 in the first electrode 66 is preferably about 6-20 microns. The second electrode aperture 80 is preferably within about 25% of 1.2 millimeters; the third electrode aperture 82 is preferably within about 25% of .4 millimeters. The outer radii of the electrodes 66 15 68r 70 are not critical, but should be 5 or more times greater than the respec-tive electrode apertures.
The radius of the :Eirst electrode aperture 78 is not cri-tical as long as i-t is small relative-to the radius of the second electrode aperture 80~ The aper-ture 78 is used as the defining aperture for the beam -- the system beam current can be determined by selection of an appropriate diameter of aper-ture 78~
The spherical aberration in -the system increases with 25 increasing radius of the first and third electrode apertures 78~ 82r but decreases slowly below abou-t ~2 millimeters. The spherical aberration in the system increases, however, with decreasing diameter of second electrode aperture 80~
The axial -thickness of the first electrode is about r2~~8 mm, preferably about .4 millimeter;
the thickness of the second electrode 68 is substantially greater -- about 1.0-1.4 mm, e.g., preferably about 1.2 millimeters; the -third electrode has a thickness about the same as the first electrode ~3~26~2 '6 -- ahout .2-.B mm, preEerably ahout .~ millime-ter.
The thickness or the center electrode 68 is the most critical. There is a relationship between the thickness and the radius of the second elec-trode. In the preferred embodiment described above, the aperture radius and thickness are the same -- about 1.2 mm. The relative dimenxions of these parameters can, however, be varied 2:l in either direction.
It should be pointed ou-t that the coefficient of chromatic aberration is almost entirely determined by the focal length.
Adjustmen-t of other parameters will have significantly less affect on chroma-tic aberration for a fixed object and image.
In a preferred embodiment, the spacing between the tip 60 and the first electrode 66 is preferably about 3-5 millimeters. For minimized probe size, it is desired that the system have ma~nification of .5-2Ø This means -that the image distances are in the range of a few millimeters.
With image distances of only a few millimeters, the criticali-ty of the need for the integrated magnetic deflection/stiymatizing system described above can be seen.
The voltages applied to the electrodes 66, 68 and 70 may, for example, be 0, -5 to -6 kilovol-ts (variable), and 0 respectively, with an extraction potential applied to the tip 60 of 3-lO kilovolts, preferably about 5 kilovolts. It is desirable -that the electron energies upon impact with -the medium 13 be approximately equal to the extrac-tion voltage (here both approximately 5 kilovolts).
A relatively low accelerating voltage is needed to control the depth of penetration of the electron beam probe into the storage medium. In 7 ~

wri-tin~ applications, too-cleep penetra-tion would reduce the meclium heating and impair melting of the medium. In reading applica-tions, too-deep penetration might impair the resolution oE the system. With the first, second, third and fourth potentials, -the thickness and aperture diameters of said electrodes and the interelectrode spacings as given above, the electron beam current generated by the gun is in the range of about 20 to 500 nanoamperes and the beam probe has a diameter in the range of about 200 to lO00 angs-troms.
In FIG~RES 6-9 are shown the values of spherical aberration coefficient (Cs), chromatic aberration coefficient (Cc), image distance and magnification for the following set of parame-ters.
Interelectrode spacing (each), measured sur~ace to surface, on axis is l mm.
Radius of electrode aperture 78 is 6-20 microns.
Radius oE electrode aperture 80 is 1.2 mm.
Radius oE electrode aperture 82 is .4 mm.
Thickness of electrode 66 is .4 mm.
Thickness of electrode 68 is 1.2 mm.
Thickness of electrode 70 is .4 mm.
In FIGURES 6-9, all distances are measured from the central electrode. The various curves show -the behavior oE the gun as a Eunction of the potential on the middle electrode. (The numbers reEer to the kinetic energy of an electron at that point). The two dotted curves represent conditions of constant magnification (l. and .8 respectively) and are useful for choosing the final -tip position --0.8 may be preferred.
In presenting the results, -the values of Cs and Cc are given in somewhat unconven-tional terms, namelY:

~267~
2~

(image) = Cs ~3~source) (image~ = Cc ~ ~ (source), where V

the emission angle at the source is used as the reference angle. The reason for -this choice is that one is concerned not only with the size of the image, but also with the amount of current which can be obtained (determined by the source angle~O
FIGURE 6 shows a universal plo-t o probe size versus beam angle for various values of Cs and Cc, assuming a high voltage of 5000 volts and an energy spread of l volt. The beam angle can be assumed to be the source angle.
An electron beam memory system according to this inven-tion must necessarily be very small with a total overall length from source tip 60 to probe of no greater than about 1-2 centime-ters or less. The operating voltage of the electron beam will be in-the range of about 3 to lO Kv,-the probe diameter will be in the range of 200-1000 angs-troms depending upon the applica-tion, with a probe current in the range of 50-500 nA for a writing beam and 10-200 nA for a reading beam.
In accordance with one aspect oE this invention, as afores-tated, -the electron gun according to this inven-tion is ultra-compact and of extremely low mass. Specifically, the electron gun of -this invention preferably has a -total mass of no more than about 20 grams.
The electron gun 36 according to -this invention is extraordinarily compact. By way of illustrationr the total length of the gun is no more than about .5-1.0 centimeter. A gun having such ex-treme compac-tness and low mass is suscep-tible of ~ 3 ~ 2 6 7 ~

being quickly moved to any part of -the recording meclium in order to effectuate rapid random accessing of any selected area on-the medium Eor the purpose of adding information to any selected file or area on the medium.
The above em~odiments are included merely as illustative and i-t is contemplated that other structures may he devised to practice the teachings of the present invention. The following claims are intended to cover such other structures.

Claims

1. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at current densities appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass cathode adapted to receive a predetermined first electrical potential to form a high brightness electron source;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium, said lens comprising:
a first electrode adapted to receive a predetermined second electrical potential which is positive relative to said first potential, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes.

2. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at current densitites appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass cathode adapted to receive a predetermined first electrical potential and to form a high brightness electron source;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium, said lens comprising:
a first electrode adapted to receive a predetermined second electrical potential which is positive relative to said first potential, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said gun having a tip-to-third-electrode length of no more than about 1 centimeter and a mass no greater than about 20 grams in order to make feasible rapid random accessing of any area of said storage medium.

3. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at beam current densities appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass cathode, said cathode being adapted to receive a predetermined first electrical potential and forming a high brightness electron source;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium at a magnification of .5-2.0, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture.
said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, the said first, second, third and fourth potentials, the thickness and aperture diameters of said electrodes and the interelectrode spacings being such that the electron beam current generated by said gun is in the range of about 10 to 500 nanoamperes, and said beam probe having a diameter in the range of about 200 to 1000 angstroms.

4. The apparatus defined by claim 3 wherein the thickness and aperture radius of said second electrode are approximately equal.

5. The apparatus defined by claim 4 wherein the thickness of said first, second and -third electrodes are, respectively, .2-.3 mm, 1.0-1.4 mm, and .2-.3 mm, and the potentials on said first, second and third electrodes are about 0, -5 to -6 and 0 kilovolts, respectively.

6. The apparatus as defined by claim 3 wherein said first electrode aperture has a radius in the range of 6-20 microns.

7. The apparatus defined by claim 6 wherein the radii of said second and said third electrode apertures are within about 25% of 1.2 mm and .4 mm, respectively.

8. The apparatus defined by claim 7 wherein the separation of said source and said first electrode is about 3-5 mm, the interelectrode spacings totals within about 25% of 2 mm, and the total thickness of said first, said second and said third electrodes is within about 25% of 2 mm, whereby the overall length of the gun from said tip to exit from said third electrode is between about .5-1.0 centimeter.

9. A rapid random accessed electron beam reading or writing system comprising:

means supporting a surface to be probed with an electron beam; and an electron gun and means for effecting relative movement between said gun and said surface, said gun having ultra-compactness and low mass, yet being capable of developing a finely focused electron beam probe at current densities appropriate for writing information on or reading information from said surface, said gun comprising:
a low-mass field emission cathode, said cathode being adapted to receive a predetermined first electrical potential and forming a high brightness electron source;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said surface, said lens comprising;
a first electrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said first electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, the thickness and aperture radius of said second electrode being approximately equal.

10. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at beam current densities appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass field emission cathode, said cathode having an emitting tip and being adapted to receive a predetermined first electrical potential to form a high brightness electron source at said tip;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential selected in relation to said first potential to effect an extraction of electrons from said tip and having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said first electrode aperture having a radius in the range of 6-20 microns and said second and third electrode apertures having radii of within 25% of 1.2 mm and .4 mm, respectively.

11. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at beam current densities appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass field emission cathode, said cathode having an emitting tip and being adapted to receive a predetermined first electrical potential to form a high brightness electron source at said tip;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential selected in relation to said first potential to effect an extraction of electrons from said tip and having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable, third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, the spacing between said tip and said first electrode being about 3-5 millimeters, the interelectrode spacings totaling within about 100% of 2 millimeters, the total thickness of said first, second and third electrodes being within about 100%
of 2 millimeters, and the overall length of the gun from tip to exit from the third electrode is between about .5-1.0 centimeter.

12. A rapid random accessed electron beam recording or writing system comprising:
means supporting a surface to be probed with an electron beam; and an electron gun and means for effecting relative movement between said gun and said surface, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at current densities appropriate for writing information on or reading information from said surface, said gun comprising:
a low-mass cathode, said cathode being adapted to receive a predetermined first electrical potential and forming a high brightness electron source;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said surface, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said gun having a mass no greater-than about 20 grams in order to make feasible rapid random accessing of any area of said storage medium, the thickness and aperture radius of said second electrode being about equal, said first electrode aperture having a radius in the range of about 6-20 microns, and said second and third electrode apertures being within about 25% of 1.2 mm and .4 mm, respectively, the separation of said source and said first electrode being about 3-5 millimeters.

13. The apparatus defined by claim 12 wherein the thicknesses of said first, second and third electrodes are, respectively, about .2-.8 mm, 1.0-1.4 mm and .2-.8 mm.

14. The apparatus defined by claim 12 wherein the spacing of said source from said first electrode is about 3-5 mm, the interelectrode spacings totals within about 100% of 2 mm, the total thickness of said first, said second, and said third electrodes is within about 100% of 2 mm, and the overall length of the gun from source to exit from said third electrode is between about .5-1.0 centimeter.

15. A rapid random accessed electron beam memory system comprising:
disc means mounted for rotation and supporting an information storage medium;
disc rotating means for rotating said disc;
and an electron gun and means for moving said gun across said disc, said gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe at current densitites appropriate for writing information on or reading information from said medium, said gun comprising:
a low-mass field emission cathode, said cathode having an emitting tip and being adapted to receive a predetermined first electrical potential to form a high brightness electron source at said tip;
an electrostatic focus lens for forming a real image of said electron source in the vicinity of said recording medium, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential and having a value in the range of 3-10 kilovolts effective to extract electrons from said tip, said electrode having a relatively small apreture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative said third potential for accelerating said beam and determining the depth of penetration of said beam into said storage medium, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said gun having said mass no greater than about 20 grams in order to make feasible rapid random accessing of any area of said storage medium, the said first, second, third and fourth potentials, the thickness and aperture diameters of said electrodes, and the interelectrode spacings being such that said electron beam current generated by said gun is in the range of about 10 to 500 nanoamperes, said beam probe has a diameter in the range of about 200-1000 angstroms, the thicknesses of said first, second and third electrodes are, respectively, .2-.8 mm, 1.0-1.4 mm, and .2-.8 mm, said first electrode has a radius of 6-20 microns, the radii of said second and said third electrode apertures is within about 25% of 1.2 mm and .4 mm, respectively, the separation of said tip and said first electrode is about 3-5 mm, the interelectrode spacings total within about 100% of 2 mm, and the overall axial length of the gun from tip to exit from said third electrode is between about .5-1.0 centimeter.

16. An electron gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam probe, said gun comprising:
a low-mass field emission cathode, said cathode having an emitting tip and being adapted to receive a predetermined first electrical potential to form a high brightness source at said tip;
an electrostatic focus lens for forming a real image of said electron source, said lens comprising:
a first electrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential and having a value effective to extract electrons from said tip, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said gun having a mass no greater than about 20 grams, said first electrode aperture having a radius in the range of 6-20 microns, said second and third electrode apertures being within 25% of 1.2 mm and .4 mm respectively, and the separation of said tip and said first electrode being about 3-5 millimeters.

17. The apparatus defined by claim 16 wherein the thicknesses of said first, second and third electrodes are, respectively, .2-.8 mm, 1.0-1.4 mm and .2-.8 mm.

18. The apparatus defined by claim 16 wherein said first electrode aperture has a radius of 6-20 microns, and the radii of said second and said third electrode apertures are within about 25% of 1.2 mm and .4 mm, respectively.

19. The apparatus defined by claim 16 wherein the tip-to-first electrode distance is about 3-5 mm, the interelectrode spacings totals within about 100% of 2 mm, and the total thickness of said first, said second and said third electrodes is within about 100% of 2 mm, and the overall length of the gun from tip to exit from said third electrode is between about .5-1.0 centimeter.

20. An electron gun having ultra-compactness and extremely low mass, yet being capable of developing a finely focused electron beam, said gun comprising:
a low-mass field emission cathode, said cathode having an emitting tip and being adapted to receive a predetermined first electrical potential to form a high brightness electron source at said tip;
an electrostatic focus lens comprising:

a first wlectrode being adapted to receive a predetermined second electrical potential which is positive relative to said first potential and having a value in the range of 3-10 kilovolts effective to extract electrons from said tip, said electrode having a relatively small aperture for determining the diameter of an electron beam which is formed, a second electrode located downbeam of said first electrode and adapted to receive an adjustable third, focusing, electrical potential which is negative relative to said second electrical potential, said second electrode having an aperture which is larger than said first electrode aperture, and a third electrode located downbeam of said second electrode and adapted to receive a fourth, accelerating, electrical potential which is positive relative to said third potential for accelerating said beam, said third electrode having an aperture which is also larger than said first electrode aperture, said second, third and fourth electrical potentials being selected to establish beam-focusing fields between said first and second and between said second and said third electrodes, said gun having a mass no greater than about 20 grams, the said first, second, third and fourth potentials, the thickness and aperture diameters of said electrodes, and the interelectrode spacings being such that said electron beam current generated by said gun is in the range of about 10-500 nanoamperes, the thicknesses of said first, second and third electrodes are, respectively, about .2-.8 mm, 1.0-1.4 mm and .2-.8 mm, said first electrode aperture having a radius of 6-20 microns, the radii of said second and said third electrode apertures being within about 25% of 1.2 mm and .4 mm, respectively, the separation of said tip and said first electrode being about 3-5 mm, the interelectrode spacings totaling within about 100% of 2 mm, and the overall length of the gun from tip to exit from said third electrode is between about .5-1.0 centimeter.