CA2000525C - Grating-coupled surface-emitting superluminescent device - Google Patents
Grating-coupled surface-emitting superluminescent deviceInfo
- Publication number
- CA2000525C CA2000525C CA002000525A CA2000525A CA2000525C CA 2000525 C CA2000525 C CA 2000525C CA 002000525 A CA002000525 A CA 002000525A CA 2000525 A CA2000525 A CA 2000525A CA 2000525 C CA2000525 C CA 2000525C
- Authority
- CA
- Canada
- Prior art keywords
- grating
- diode
- light
- waveguide
- refraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Abstract
A GRATING-COUPLED SURFACE-EMITTING
SUPERLUMINESCENT DEVICE
Abstract of the Disclosure A superluminescent diode has one end coupled to a grating output coupler and the other end has a reflective coating. A broad light spectrum is emitted for reduced speckle interference and phase noise when used in applications such as a gyroscope. The diode can be of the "P side down" type for good heat dissipation during continuous wave operation. Two gratings can be used in order to reduce beam divergence.
SUPERLUMINESCENT DEVICE
Abstract of the Disclosure A superluminescent diode has one end coupled to a grating output coupler and the other end has a reflective coating. A broad light spectrum is emitted for reduced speckle interference and phase noise when used in applications such as a gyroscope. The diode can be of the "P side down" type for good heat dissipation during continuous wave operation. Two gratings can be used in order to reduce beam divergence.
Description
20005~
-1 - RCA 83,243 A GRATING-COUPLED SURFACE-EMITTING
SUPERLUMINESCENT DEVICE
Backaround of the Invention The present invention relates to superluminescent (SL) devices, and more particularly, to such devices that are coupled to gratings.
Superluminescent devices, such as diodes are less coherent (broader bandwidth) than laser diodes, and therefore, have less speckle interference patterns that are random in time. For certain applications, such as gyroscopes, this is desirable, since the gyroscope output signal represents a phase difference and any random interference patterns result in phase noise in the output signal. SL
devices normally have two ends with a reflecting and antireflecting coatings respectively disposed on the ends. The light is emitted by the end with the antireflecting co~ting. However, some small amount of light will be reflected from the antireflecting coating resulting in speckle interference patterns, and thus, phase noise in a gyroscope output signal, although less than that when a laser, which has two reflecting coatings, is used therein.
It is, therefore, desirable to have an SL device which has reduced speckle interference patterns, and thus, produces reduced phase noise when used in an application such as a gyroscope.
Summarv of the Invention A device in accordance with the invention comprises a superlurninescent diode having a pair of ends; a reflecting coating disposed at one of said ends; and a grating output coupler having a first grating optically coupled to the other end to reduce speckle interference patterns.
~' '''' ~ , ~ ' 2000~25
-1 - RCA 83,243 A GRATING-COUPLED SURFACE-EMITTING
SUPERLUMINESCENT DEVICE
Backaround of the Invention The present invention relates to superluminescent (SL) devices, and more particularly, to such devices that are coupled to gratings.
Superluminescent devices, such as diodes are less coherent (broader bandwidth) than laser diodes, and therefore, have less speckle interference patterns that are random in time. For certain applications, such as gyroscopes, this is desirable, since the gyroscope output signal represents a phase difference and any random interference patterns result in phase noise in the output signal. SL
devices normally have two ends with a reflecting and antireflecting coatings respectively disposed on the ends. The light is emitted by the end with the antireflecting co~ting. However, some small amount of light will be reflected from the antireflecting coating resulting in speckle interference patterns, and thus, phase noise in a gyroscope output signal, although less than that when a laser, which has two reflecting coatings, is used therein.
It is, therefore, desirable to have an SL device which has reduced speckle interference patterns, and thus, produces reduced phase noise when used in an application such as a gyroscope.
Summarv of the Invention A device in accordance with the invention comprises a superlurninescent diode having a pair of ends; a reflecting coating disposed at one of said ends; and a grating output coupler having a first grating optically coupled to the other end to reduce speckle interference patterns.
~' '''' ~ , ~ ' 2000~25
- 2 - RCA 83,243 Brief Description of the Drawin~s FIGURE 1 is a side view of a first embodiment af the invention;
FIGURE 2 is a side view of a second embodiment of the invention; and FIGURE 3 shows a side view of a third embodiment of the invention with reduced beam divergence.
Detailed Description of the Preferred Embodiments As shown in FIGURE 1, a device in accordance with the invention, generally designated 10, comprises an SL diode 12, and a grating output coupler 14. In turn, the SL diode 12 comprises an N-contact 16, e.g., such as sintered Ni/Ge/Au, a substrate 18, such as GaAs, an intermediate layer section 20, and a P-ccntact 22 As known in the art, the section 20 actually comprises a plurality of layers. Details of the section 20 and the contacts 16 and 22 are the same as for the corresponding elements of a laser diode such as are shown in Canadian Application Serial No. 606,257, filed July 20,1989, in the name of D. Carlin, and entitled "Surface emitting Lasers With Combined Output". Most importantly, the section 20 comprises an optlcal waveguide 23 having an active length "L" and a width "W". Typically "W" is between about 1 to 4 m and "L" is between about 100 to 500 m.
A reflective coating 24, e.g., such as shown in U.S. Patent No.
4,092,659, is disposed at one end of the SL diode 12. As shown in said U.S. patent, the coating 24 preferably comprises 3 pairs of alternate layers of Al203 and S02, each layer being one-quarter wavelength thick for a total of 6 layers. The grating output couples 14 is optically coupled to the other end of the diode 12 and has a grating 27 that is formed in part of a P-cladding layer (not shown) of the waveguide 23 of the section 20, if the SL diode 12 is of the quantum wall (QW) type, or the grating 27 is part of the waveguide 23 of the section 20, if the diode 12 is of the double heterostructure-large optical cavity (DH-LOC) type. Both types are shown in aforementioned Canadian Application Serial No. 606,257.
The first order of the second order grating output coupler 14 is used, which provides light at an angle ~ to the normal 25 Q the layer 20 as shown by the arrow 26. The angle ~ ~ arc sin ~ ne d , . , - , -.
- ` ~- :- ' ' ,.
' - ' . . ' .::
-~ 2000~2~
FIGURE 2 is a side view of a second embodiment of the invention; and FIGURE 3 shows a side view of a third embodiment of the invention with reduced beam divergence.
Detailed Description of the Preferred Embodiments As shown in FIGURE 1, a device in accordance with the invention, generally designated 10, comprises an SL diode 12, and a grating output coupler 14. In turn, the SL diode 12 comprises an N-contact 16, e.g., such as sintered Ni/Ge/Au, a substrate 18, such as GaAs, an intermediate layer section 20, and a P-ccntact 22 As known in the art, the section 20 actually comprises a plurality of layers. Details of the section 20 and the contacts 16 and 22 are the same as for the corresponding elements of a laser diode such as are shown in Canadian Application Serial No. 606,257, filed July 20,1989, in the name of D. Carlin, and entitled "Surface emitting Lasers With Combined Output". Most importantly, the section 20 comprises an optlcal waveguide 23 having an active length "L" and a width "W". Typically "W" is between about 1 to 4 m and "L" is between about 100 to 500 m.
A reflective coating 24, e.g., such as shown in U.S. Patent No.
4,092,659, is disposed at one end of the SL diode 12. As shown in said U.S. patent, the coating 24 preferably comprises 3 pairs of alternate layers of Al203 and S02, each layer being one-quarter wavelength thick for a total of 6 layers. The grating output couples 14 is optically coupled to the other end of the diode 12 and has a grating 27 that is formed in part of a P-cladding layer (not shown) of the waveguide 23 of the section 20, if the SL diode 12 is of the quantum wall (QW) type, or the grating 27 is part of the waveguide 23 of the section 20, if the diode 12 is of the double heterostructure-large optical cavity (DH-LOC) type. Both types are shown in aforementioned Canadian Application Serial No. 606,257.
The first order of the second order grating output coupler 14 is used, which provides light at an angle ~ to the normal 25 Q the layer 20 as shown by the arrow 26. The angle ~ ~ arc sin ~ ne d , . , - , -.
- ` ~- :- ' ' ,.
' - ' . . ' .::
-~ 2000~2~
- 3 - RCA 83,243 wherein ~ = wavelength of light in free space, d = grating period, and ne = effective index of refraction of the waveguide 23 in the layer 20.
preferably, in order to maximize the emitted light, the grating 27 is blazed in the first order, e.g., the grating portion 28 is typically at a 45 degree angle to said normal 25, although other angles for the blazing can be used, while grating portion 30 is parallel to said normal. The grating period "d" is selected so that only single pass gain occurs, this can be done by satisfying the inequality arc sin ~ -; >> W
c _ ned L.
The spacing "d" typically is between about 2500A to 3500A
(Angstroms). Details about blazed gratings are found in the article "Simplified approach to surface-wave scattering by blazed dielectric gratings", by K.C. Chang et al., Applied Optics, Vol. 19, No. 2, January 15, 1980, pages 282-288.
In operation, positive and negative voltages are applied to the contacts 22 and 16, respectively, and then stimulated emission of photons occurs in the SL diode 12. since only one reflective coating 24 is present and the above inequality is satisfied, only single pass gain occurs in the SL diode 12. Thus, relatively broad spectrum light is emitted by the SL diode 12 and then coupled out after said single pass directly from the grating output coupler 14. There are no Fabry-Perot modes in the present invention, compared with an SL diode having both reflecting and antireflecting coatings that can give rise to residual Fabry-Perot modes. Therefore, there will be reduced speckle interference patterns, and hence phase noise, when used in an application, e.g., such as a gyroscope.
in the second embodiment of FIGURE 2, the so called "P
side down" type, and wherein corresponding elements have corresponding reference numerals, there is a heat sink 32, e.g., Cu, typically of at least 2 mils (0.005 cm) thickness. A contact 34, e.g., Au, between about 1 000-2500A thick is on the sink 32. In contradistinction to FIGUR~ 1, the P-contact 22 is below the intermediate layer section 20 while the N-contact 16 is thereabove. The grating output coupler 14 is below some of the layers of the section 20, e.g., the waveguide 23 is the SL diode 12 is of the DH-LOC type or the quantum well and ,, ~:; - . . : - ..
; . : .
, - ,. .
2000~25
preferably, in order to maximize the emitted light, the grating 27 is blazed in the first order, e.g., the grating portion 28 is typically at a 45 degree angle to said normal 25, although other angles for the blazing can be used, while grating portion 30 is parallel to said normal. The grating period "d" is selected so that only single pass gain occurs, this can be done by satisfying the inequality arc sin ~ -; >> W
c _ ned L.
The spacing "d" typically is between about 2500A to 3500A
(Angstroms). Details about blazed gratings are found in the article "Simplified approach to surface-wave scattering by blazed dielectric gratings", by K.C. Chang et al., Applied Optics, Vol. 19, No. 2, January 15, 1980, pages 282-288.
In operation, positive and negative voltages are applied to the contacts 22 and 16, respectively, and then stimulated emission of photons occurs in the SL diode 12. since only one reflective coating 24 is present and the above inequality is satisfied, only single pass gain occurs in the SL diode 12. Thus, relatively broad spectrum light is emitted by the SL diode 12 and then coupled out after said single pass directly from the grating output coupler 14. There are no Fabry-Perot modes in the present invention, compared with an SL diode having both reflecting and antireflecting coatings that can give rise to residual Fabry-Perot modes. Therefore, there will be reduced speckle interference patterns, and hence phase noise, when used in an application, e.g., such as a gyroscope.
in the second embodiment of FIGURE 2, the so called "P
side down" type, and wherein corresponding elements have corresponding reference numerals, there is a heat sink 32, e.g., Cu, typically of at least 2 mils (0.005 cm) thickness. A contact 34, e.g., Au, between about 1 000-2500A thick is on the sink 32. In contradistinction to FIGUR~ 1, the P-contact 22 is below the intermediate layer section 20 while the N-contact 16 is thereabove. The grating output coupler 14 is below some of the layers of the section 20, e.g., the waveguide 23 is the SL diode 12 is of the DH-LOC type or the quantum well and ,, ~:; - . . : - ..
; . : .
, - ,. .
2000~25
- 4 - RCA 83,242 confining layers (not shown) if the SL diode 12 is of the QW type. A
coating 36 can be highly reflecting and made as explained above for coating 24 or be partially reflecting, e.g., a layer of Si3N4 The light 26 emerges perpendicular to the longitudinal direction of the grating output
coating 36 can be highly reflecting and made as explained above for coating 24 or be partially reflecting, e.g., a layer of Si3N4 The light 26 emerges perpendicular to the longitudinal direction of the grating output
5 coupler 14 and directly from the diode 12, in particular, from the intermediate layer section 20 thereof.
The above embodiment has the active layer (DH-LOC type) or quanturn well (QW type) close to the heat sink 32 for good heat dissipation, and therefore, good operation in the continuous wave mode 10 is achieved.
In FIGURE 3, a transparent layer 38, which has a difference index of refraction than the grating output coupler 14 and a typical thickness between about 1-2,um, overlies the grating output coupler 14.
The layer 38 can comprise AlGaAs, SiO2, Si3N4, etc. A second grating 15 40 (first or second order) is at the top of the layer 38, with its longitudinal direction parallel to that of grating output coupler 14. The grating 40 can have a different blazing than that of grating 27.
Overlying the grating 40 is a layer 42. The condition for outcoupling light from layer 42 is that its index of refraction is greater than that of the 20 waveguide 23. Layer 42 must be sufficiently thin so that the outcoupled light is not absorbed. About 100A thickness of InSb can be used as well as other materials. The light 26 emerges perpendicularly or some other angle from the grating 40. The embodiment of FIGURE 3 has a beam divergence of only about one degree or less for all wavelengths 25 compared to a divergence between about 2-3 degrees for the embodiments of FIGURES 1 and 2 for a grating output coupler length between about 200-300~m. , .- . - , , ~, , ~ . '- , :
.. . . . . .
The above embodiment has the active layer (DH-LOC type) or quanturn well (QW type) close to the heat sink 32 for good heat dissipation, and therefore, good operation in the continuous wave mode 10 is achieved.
In FIGURE 3, a transparent layer 38, which has a difference index of refraction than the grating output coupler 14 and a typical thickness between about 1-2,um, overlies the grating output coupler 14.
The layer 38 can comprise AlGaAs, SiO2, Si3N4, etc. A second grating 15 40 (first or second order) is at the top of the layer 38, with its longitudinal direction parallel to that of grating output coupler 14. The grating 40 can have a different blazing than that of grating 27.
Overlying the grating 40 is a layer 42. The condition for outcoupling light from layer 42 is that its index of refraction is greater than that of the 20 waveguide 23. Layer 42 must be sufficiently thin so that the outcoupled light is not absorbed. About 100A thickness of InSb can be used as well as other materials. The light 26 emerges perpendicularly or some other angle from the grating 40. The embodiment of FIGURE 3 has a beam divergence of only about one degree or less for all wavelengths 25 compared to a divergence between about 2-3 degrees for the embodiments of FIGURES 1 and 2 for a grating output coupler length between about 200-300~m. , .- . - , , ~, , ~ . '- , :
.. . . . . .
Claims (11)
1. A device comprising:
a superluminescent diode having a pair of ends;
a reflecting coating disposed at one of said ends; and a grating output coupler having a first grating optically coupled to the other end.
a superluminescent diode having a pair of ends;
a reflecting coating disposed at one of said ends; and a grating output coupler having a first grating optically coupled to the other end.
2. The device of claim 1 wherein light is emitted directly from said grating.
3. The device of claim 1 wherein light is emitted directly from said diode.
4. The device of claim 1 wherein said diode is of the DH-LOC type.
5. The device of claim 1 wherein said diode is of the QW
type.
type.
6. The device of claim 1 wherein said grating is blazed.
7. The device of claim 1 further comprising a heat sink coupled to said diode.
8. The device of claim 1 further comprising a second grating optically coupled to said first grating.
9. The device of claim 8 wherein said gratings are in parallel and extend perpendicular to emitted light.
10. The device of claim 9 further comprising a waveguide optically coupled to said diode and having an effective index of refraction and a layer disposed over said second grating and having a higher index of refraction than said waveguide.
11. The device of claim 1 wherein said diode comprises an optical waveguide having an active length of L and a width of W and wherein .lambda. = wavelength of light in free space, d = grating period, and ne = effective index of refraction of said optical waveguide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US263,464 | 1988-10-27 | ||
| US07/263,464 US4952019A (en) | 1988-10-27 | 1988-10-27 | Grating-coupled surface-emitting superluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2000525A1 CA2000525A1 (en) | 1990-04-27 |
| CA2000525C true CA2000525C (en) | 1994-05-10 |
Family
ID=23001893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002000525A Expired - Lifetime CA2000525C (en) | 1988-10-27 | 1989-10-12 | Grating-coupled surface-emitting superluminescent device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4952019A (en) |
| CA (1) | CA2000525C (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442582A (en) * | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | Light emitting diode array |
| US5111467A (en) * | 1990-09-10 | 1992-05-05 | Tacan Corporation | Hybrid rugate filter assembly for temperature stabilized emission of grating coupled surface emitting lasers |
| US5109386A (en) * | 1990-09-10 | 1992-04-28 | Tacan Corporation | Rugate filter on grating coupled surface emitting laser array |
| US5123070A (en) * | 1990-09-10 | 1992-06-16 | Tacan Corporation | Method of monolithic temperature-stabilization of a laser diode by evanescent coupling to a temperature stable grating |
| US5159603A (en) * | 1991-06-05 | 1992-10-27 | United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Quantum well, beam deflecting surface emitting lasers |
| US5329134A (en) * | 1992-01-10 | 1994-07-12 | International Business Machines Corporation | Superluminescent diode having a quantum well and cavity length dependent threshold current |
| JP2830591B2 (en) * | 1992-03-12 | 1998-12-02 | 日本電気株式会社 | Semiconductor optical function device |
| EP0582078B1 (en) * | 1992-08-05 | 2000-08-16 | Motorola, Inc. | Superluminescent edge emitting device |
| JP3643486B2 (en) * | 1998-08-04 | 2005-04-27 | 株式会社東芝 | Optical functional device and optical communication system |
| AU2002252457A1 (en) * | 2001-03-22 | 2002-10-08 | Jeff A. Bullington | Controlling passive facet reflections |
| US6903379B2 (en) * | 2001-11-16 | 2005-06-07 | Gelcore Llc | GaN based LED lighting extraction efficiency using digital diffractive phase grating |
| US20040114642A1 (en) * | 2002-03-22 | 2004-06-17 | Bullington Jeff A. | Laser diode with output fiber feedback |
| US7194016B2 (en) | 2002-03-22 | 2007-03-20 | The Research Foundation Of The University Of Central Florida | Laser-to-fiber coupling |
| CN100524980C (en) | 2003-03-19 | 2009-08-05 | 宾奥普迪克斯股份有限公司 | High smsr unidirectional etched lasers and low back-reflection photonic device |
| JP2013030642A (en) * | 2011-07-29 | 2013-02-07 | Mitsubishi Electric Corp | Laser device |
| JP2015064413A (en) * | 2013-09-24 | 2015-04-09 | 富士通株式会社 | Optical semiconductor element and manufacturing method therefor |
| KR102188960B1 (en) * | 2017-01-13 | 2020-12-10 | 한국전자통신연구원 | optical apparatus, manufacturing method of distributed Bragg reflector laser diode and manufacturing method of optical apparatus |
| CN109217106A (en) * | 2017-07-05 | 2019-01-15 | 长春理工大学 | A method of 1550nm SLD device F-P lasing is inhibited using multicycle surface DFB light feedback system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4092659A (en) * | 1977-04-28 | 1978-05-30 | Rca Corporation | Multi-layer reflector for electroluminescent device |
| FR2428333A1 (en) * | 1978-06-09 | 1980-01-04 | Thomson Csf | "LASER" WITH DISTRIBUTED REFLECTOR |
| US4317086A (en) * | 1979-09-13 | 1982-02-23 | Xerox Corporation | Passivation and reflector structure for electroluminescent devices |
| JPS6066489A (en) * | 1983-09-21 | 1985-04-16 | Nec Corp | Distributed feedback and distributed bragg reflector type semiconductor laser |
| JPS614290A (en) * | 1984-06-18 | 1986-01-10 | Nec Corp | Distributed feedback type semiconductor laser |
| US4639922A (en) * | 1984-09-28 | 1987-01-27 | Bell Communications Research, Inc. | Single mode injection laser structure |
| US4675873A (en) * | 1984-09-28 | 1987-06-23 | Bell Communications Research, Inc. | Single mode injection laser structure |
| JPS61148890A (en) * | 1984-12-22 | 1986-07-07 | Dainippon Printing Co Ltd | Distribution feedback type semiconductor laser element |
| JPS61216383A (en) * | 1985-03-20 | 1986-09-26 | Nec Corp | Distributed feedback semiconductor laser |
| US4730331A (en) * | 1985-04-03 | 1988-03-08 | Xerox Corporation | Superluminescent LED source |
| JPS62189785A (en) * | 1986-02-17 | 1987-08-19 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor device with distributed bragg reflector |
| EP0237812A3 (en) * | 1986-03-20 | 1988-06-29 | Siemens Aktiengesellschaft | Semiconductor laser array with a collimated beam |
| JPS6332988A (en) * | 1986-07-25 | 1988-02-12 | Nec Corp | Distributed feedback semiconductor laser |
| US4758090A (en) * | 1986-09-25 | 1988-07-19 | Allied-Signal Inc. | Optical wavelength monitor using blazed diffraction grating |
| US4786132A (en) * | 1987-03-31 | 1988-11-22 | Lytel Corporation | Hybrid distributed bragg reflector laser |
| US4764934A (en) * | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
-
1988
- 1988-10-27 US US07/263,464 patent/US4952019A/en not_active Expired - Lifetime
-
1989
- 1989-10-12 CA CA002000525A patent/CA2000525C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2000525A1 (en) | 1990-04-27 |
| US4952019A (en) | 1990-08-28 |
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