CA2001982A1 - Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same - Google Patents

Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same

Info

Publication number
CA2001982A1
CA2001982A1 CA2001982A CA2001982A CA2001982A1 CA 2001982 A1 CA2001982 A1 CA 2001982A1 CA 2001982 A CA2001982 A CA 2001982A CA 2001982 A CA2001982 A CA 2001982A CA 2001982 A1 CA2001982 A1 CA 2001982A1
Authority
CA
Canada
Prior art keywords
via holes
tungsten
alumina substrate
copper
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2001982A
Other languages
French (fr)
Other versions
CA2001982C (en
Inventor
Ramachandra M. P. Panicker
Anil K. Agarwal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsubstrates Corp
Original Assignee
Ramachandra M. P. Panicker
Anil K. Agarwal
Micro Strates, Inc.
Micro Substrates, Inc.
Micro Substrates, Inc. (Arizona Corporation)
Microsubstrates Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramachandra M. P. Panicker, Anil K. Agarwal, Micro Strates, Inc., Micro Substrates, Inc., Micro Substrates, Inc. (Arizona Corporation), Microsubstrates Corporation filed Critical Ramachandra M. P. Panicker
Publication of CA2001982A1 publication Critical patent/CA2001982A1/en
Application granted granted Critical
Publication of CA2001982C publication Critical patent/CA2001982C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
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    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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    • H05K2203/12Using specific substances
    • H05K2203/128Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322Composite web or sheet
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Abstract

An as-fired alumina substrate for a hybrid micro-circuit formed of GaAs dies operating at gigahertz frequencies has a large number of about .013" diameter via holes drilled on the surface thereof by use of a laser. A metal filling in each via hole is formed with about 85% sintered tungsten and 15% copper reflowed into the pores thereof to provide a composition that has a thermal coefficient of expansion that substantially matches that of the GaAs dies and the alumina substrate and also provides for hermetically sealing the via holes. The alumina substrate is further provided with a ground plane by which it is mounted on a metal block serving as a heat sink. The high frequency GaAs dies mounted on the via holes use the metal fillings therein to carry their internally generated heat to the heat sink and to provide low inductance ground paths for the microcircuit.
A process for placing the metal filling in the via holes makes use of a stencil having the same large number of via holes thereon as the alumina substrate for first squeegeeing a tungsten paste with a predetermined amount of binder into the via holes of the substrate. After the tungsten is sintered, the stencil is then used to squeegee a copper paste on the top of the sintered tungsten in the via holes. The copper in the paste is then reflowed into the pores of the sintered tungsten.
CA002001982A 1988-11-03 1989-11-01 Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same Expired - Fee Related CA2001982C (en)

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US07/266,669 US4942076A (en) 1988-11-03 1988-11-03 Ceramic substrate with metal filled via holes for hybrid microcircuits and method of making the same
US07/266,669 1988-11-03

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JP (1) JPH07101724B2 (en)
CA (1) CA2001982C (en)
DE (1) DE3936322C2 (en)
FR (1) FR2644964B1 (en)
GB (1) GB2226707B (en)
IT (1) IT1236637B (en)

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IT1236637B (en) 1993-03-25
IT8922203A0 (en) 1989-10-31
FR2644964B1 (en) 1994-03-25
GB2226707B (en) 1993-05-26
GB8924235D0 (en) 1989-12-13
US4942076A (en) 1990-07-17
JPH07101724B2 (en) 1995-11-01
CA2001982C (en) 1995-02-07
IT8922203A1 (en) 1991-05-01
DE3936322A1 (en) 1990-05-10
DE3936322C2 (en) 1997-04-30
GB2226707A (en) 1990-07-04
FR2644964A1 (en) 1990-09-28
JPH02216853A (en) 1990-08-29

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