CA2003823C - Thermal imaging device - Google Patents
Thermal imaging deviceInfo
- Publication number
- CA2003823C CA2003823C CA002003823A CA2003823A CA2003823C CA 2003823 C CA2003823 C CA 2003823C CA 002003823 A CA002003823 A CA 002003823A CA 2003823 A CA2003823 A CA 2003823A CA 2003823 C CA2003823 C CA 2003823C
- Authority
- CA
- Canada
- Prior art keywords
- pillars
- elements
- thermal imaging
- imaging device
- sensor elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001931 thermography Methods 0.000 title claims abstract description 11
- 239000002861 polymer material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229920001197 polyacetylene Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 2
- 229920000642 polymer Polymers 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006258 conductive agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- XKUKSGPZAADMRA-UHFFFAOYSA-N glycyl-glycyl-glycine Natural products NCC(=O)NCC(=O)NCC(O)=O XKUKSGPZAADMRA-UHFFFAOYSA-N 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Abstract
ABSTRACT OF THE DISCLOSURE
A thermal imaging device is described including an array of pyroelectric sensor elements. Each element is at least partially supported by a respective pillar of an intrinsic polymer material. The pillars provide an electrical path between the elements and a signal processing means.
A thermal imaging device is described including an array of pyroelectric sensor elements. Each element is at least partially supported by a respective pillar of an intrinsic polymer material. The pillars provide an electrical path between the elements and a signal processing means.
Description
'' '1 ~ Z0~338~3 THERMAL IMAGING_DEVICES
This invention relates to thermal lmaging devices and in particular to thermal imaging devices comprislng an array of pyroelectric elements responsive to infrared radiation.
The main factor limiting the performance of existing thermal imaging devices is the thermal conductance between ad~acent pyroelectrlc elements and between each pyroelectric element and the ~upporting and interrogatlng structure.
In US Patent No. 4,354,109 there i8 disclosed a thermal imaging devLce lncorporating an array of spaced apart pyroelectric elements in which each pyroelectric element is supported on a respective plllar formed from an epoxy resin contalning an electrically conductive agent such as silver. Each pillar creates an electrical connection between the supported pyroelectric element and an integrated circuit effective to prooess electrical slgnals ~rom the elements of the array, whllst also thermally lnsulating the element from the integrated circult.
Such a devlce suffers the disadvantage however that the process for produclng the plllars 18 relatively complicated, involving depositing a layer of the epoxy resln contalnlng the 20 electrically conductlve agent, then ion beam milllng the layer or -machining the layer u~lng optlcal cuttlng equlpment or the like to create lslands of the conductlve epoxy moterlal whlch may then be bonded to the pyroelectrlc elements and the lntegrated clrcuit.
The devic- descrlbed ln U.S. Pat-nt No. 4,354,109 suffers the ;' ' ~ : ~ 'i'' '~ ~ . ' .'. `
. , :.
;: . .
z~3~
addltional disadvantage that ln order to achieve an adequate electrical path between the elements and the integrated circuit lt is neceqsary to load the epoxy re~in with sufficient electrically conductive agent, that the thermally insulative effect of the pillar~ is limited. U.S. Patent No.4,354,109 quotes a value for the thermal conductivity of the pillars of 6 watts per centimeter degrees K, a value which would be inadequate in a practical imaging device.
It is an ob~ect of the present invention to provide a thermal imaging device wherein the above disadvantages are at least alleviated.
According to the present invention a thermal imaging device comprises an array of pyroelectric sensor elements, each element being at least partially supported by a respective pillar of an intrinsic semiconductor polymer material, the pillars providing an electrical path between the elements and a signal procesging means.
The invention thus lies in the appreciation by the inventors that electrically semiconductive polymers, such as polypyrrole, polyacetylene or polythiophene which combine a suitably low thermal conductivity, typically 6 x 10 3 W per centimetre per degree X, with a suitably high electrical conductivity, typically in excess of 1 siemens per centimetre are suitable materials for use in thermal imaging devices. As the~e intrinsically electrically conductive polymers may be electrochemically deposited onto an electeical contact region to form the required pillar shape without any need for further shaping, the fabrication peocedure is greatly simplified compared with the fabrication of epoxy pillars as described in U.S. Patent No. 4,354,109.
Two thermal imaging devices in accordance with the inventlon will now be described, by way of example only, with reference to the accompanying drawings in which:-Figure 1 i8 a schematic dlagram of a sectlon through part ofthe first device7 Figure 2 is a schematic diagram of a section through part of the second device~ and Figures 3, 4 and 5 illustrate three stages in the fabricatlon ;
.
'','~' ,' ~
20~ 82;~
~ : 3 of the second devlce, the~e flgures being on A dlfferent ~cale to that of Figure 2 for clarity.
Referrlng firstly to Figure 1, the flest device to be described includes a pyroelectrlc plate 11 having a pattern of inter-connected electrodes 12 formed on one side and an array of discrete electrodes 13 formed on the other slde. The pyroelectric plate 11 may be formed from any suitable material, for example lithium tantalate, strontium barium niobate, or triglycine sulphate. The pyroelectric sensor elements defined by the discrete electrode~ 13 are separated by two orthogonal sets of parallel slots 14.
The sensor elements are supported by respectlve hemispherlcal pillars 15, the pillars being formed by the electrochemical deposition of a s2miconductive polymer onto conductive input pads 16 on a silicon substrate 17. If the growth of the polymer on the pads is unrestricted, this hemispherical shape will occur naturally. The free ends of the pillars 15 are soldered onto the overlying discrete electrodes 13 to complete the electrical path between the sensor elements and the contact pads 16 to the integrated circuit.
The input pads 16 are separated laterally by insulative surface passivation layers 18, for example polyimide or silicon dioxide deposited on the silicon substrate 17. Within the substrate 17 i8 formçd a CMOS lntegrated circuit indicated schematically as 19 effective to perform signal processing of the signals produced by the sensor elements in operation of the device.
It will be seen that the slots 14 between the sensor elements reduce the thermal conductance between ad~acent sensor elements, which would otherwlse result in cros~-talk between sensor elements 30 and 1088 of sensitlvity. The plllars 15 create an electrlcal path between the sensor elements and the slgnal processing means, whilst providing high thermal insulation between the sensor elements and the sillcon substrate 17. Sultable materlals for the pillars lnclude polyacetylene or phenyl-containing polymers.
Referring now to Flgure 2, the second device dlffers from the first devlce ln that the pyroelectric plate 11 with slots 14 is : 4 2a~38~
replaced by a thin pyroelectric film 21, and that the hemispherical pillars are replaced by columnar pillars 25. All other features remain unchanged and are given the same reference numbers as in Figure 1. The thin film 21 in Figure 2 has a sufficiently low transverse thermal conductance such that there is negligible cross-talk between sensor elements. If necessary however discontinuous short slits could be made between adjacent -sensor elements.
Suitable materials for the pyroelectric film 21 are polyvinylidene fluoride (PVDF) or copolymers of vinylidene fluoride.
Figures 3, 4 and 5 illustrate one method of forming the pillars 25 shown in Figure 2. In the method shown, a thick photoresist layer 31 provides a wall surrounding a cavity in which the pillar 25 is grown by electrochemical deposition of the semiconductive polymer. A metal layer 33 is subsequently deposited on top of the pillar 25 to facilitate soldering of the pillar to the respective discrete electrodes 13. The photoresist layer is then etched away to leave the columnar structure shown in Figure 2.
It will be seen that in contrast to the device illustrated in .S. Patent No. 4,354,109, the pillars 25 have a diameter of only 25~ of the discrete electrodes 13. This is particularly advantageous as the thermal conductance per unit area of the electrode, the so called 'G~ value, will then be relatively low, typically in the order of 0.1 W per square centimetre per degree K.
It will be appreciated that whilst ln the devices described herebefore, the polymer plllars are fabricated by electrochemlcal depositlon, the lnventlon also includes devices in which the polymeric pillars are fabricated by vapour depositlon, for example by the polymerization of polyacetylene. Such alternative methods will also enable the deposition of the intrinsically semiconductive polymers in the requislte shape.
. ' . -:
This invention relates to thermal lmaging devices and in particular to thermal imaging devices comprislng an array of pyroelectric elements responsive to infrared radiation.
The main factor limiting the performance of existing thermal imaging devices is the thermal conductance between ad~acent pyroelectrlc elements and between each pyroelectric element and the ~upporting and interrogatlng structure.
In US Patent No. 4,354,109 there i8 disclosed a thermal imaging devLce lncorporating an array of spaced apart pyroelectric elements in which each pyroelectric element is supported on a respective plllar formed from an epoxy resin contalning an electrically conductive agent such as silver. Each pillar creates an electrical connection between the supported pyroelectric element and an integrated circuit effective to prooess electrical slgnals ~rom the elements of the array, whllst also thermally lnsulating the element from the integrated circult.
Such a devlce suffers the disadvantage however that the process for produclng the plllars 18 relatively complicated, involving depositing a layer of the epoxy resln contalnlng the 20 electrically conductlve agent, then ion beam milllng the layer or -machining the layer u~lng optlcal cuttlng equlpment or the like to create lslands of the conductlve epoxy moterlal whlch may then be bonded to the pyroelectrlc elements and the lntegrated clrcuit.
The devic- descrlbed ln U.S. Pat-nt No. 4,354,109 suffers the ;' ' ~ : ~ 'i'' '~ ~ . ' .'. `
. , :.
;: . .
z~3~
addltional disadvantage that ln order to achieve an adequate electrical path between the elements and the integrated circuit lt is neceqsary to load the epoxy re~in with sufficient electrically conductive agent, that the thermally insulative effect of the pillar~ is limited. U.S. Patent No.4,354,109 quotes a value for the thermal conductivity of the pillars of 6 watts per centimeter degrees K, a value which would be inadequate in a practical imaging device.
It is an ob~ect of the present invention to provide a thermal imaging device wherein the above disadvantages are at least alleviated.
According to the present invention a thermal imaging device comprises an array of pyroelectric sensor elements, each element being at least partially supported by a respective pillar of an intrinsic semiconductor polymer material, the pillars providing an electrical path between the elements and a signal procesging means.
The invention thus lies in the appreciation by the inventors that electrically semiconductive polymers, such as polypyrrole, polyacetylene or polythiophene which combine a suitably low thermal conductivity, typically 6 x 10 3 W per centimetre per degree X, with a suitably high electrical conductivity, typically in excess of 1 siemens per centimetre are suitable materials for use in thermal imaging devices. As the~e intrinsically electrically conductive polymers may be electrochemically deposited onto an electeical contact region to form the required pillar shape without any need for further shaping, the fabrication peocedure is greatly simplified compared with the fabrication of epoxy pillars as described in U.S. Patent No. 4,354,109.
Two thermal imaging devices in accordance with the inventlon will now be described, by way of example only, with reference to the accompanying drawings in which:-Figure 1 i8 a schematic dlagram of a sectlon through part ofthe first device7 Figure 2 is a schematic diagram of a section through part of the second device~ and Figures 3, 4 and 5 illustrate three stages in the fabricatlon ;
.
'','~' ,' ~
20~ 82;~
~ : 3 of the second devlce, the~e flgures being on A dlfferent ~cale to that of Figure 2 for clarity.
Referrlng firstly to Figure 1, the flest device to be described includes a pyroelectrlc plate 11 having a pattern of inter-connected electrodes 12 formed on one side and an array of discrete electrodes 13 formed on the other slde. The pyroelectric plate 11 may be formed from any suitable material, for example lithium tantalate, strontium barium niobate, or triglycine sulphate. The pyroelectric sensor elements defined by the discrete electrode~ 13 are separated by two orthogonal sets of parallel slots 14.
The sensor elements are supported by respectlve hemispherlcal pillars 15, the pillars being formed by the electrochemical deposition of a s2miconductive polymer onto conductive input pads 16 on a silicon substrate 17. If the growth of the polymer on the pads is unrestricted, this hemispherical shape will occur naturally. The free ends of the pillars 15 are soldered onto the overlying discrete electrodes 13 to complete the electrical path between the sensor elements and the contact pads 16 to the integrated circuit.
The input pads 16 are separated laterally by insulative surface passivation layers 18, for example polyimide or silicon dioxide deposited on the silicon substrate 17. Within the substrate 17 i8 formçd a CMOS lntegrated circuit indicated schematically as 19 effective to perform signal processing of the signals produced by the sensor elements in operation of the device.
It will be seen that the slots 14 between the sensor elements reduce the thermal conductance between ad~acent sensor elements, which would otherwlse result in cros~-talk between sensor elements 30 and 1088 of sensitlvity. The plllars 15 create an electrlcal path between the sensor elements and the slgnal processing means, whilst providing high thermal insulation between the sensor elements and the sillcon substrate 17. Sultable materlals for the pillars lnclude polyacetylene or phenyl-containing polymers.
Referring now to Flgure 2, the second device dlffers from the first devlce ln that the pyroelectric plate 11 with slots 14 is : 4 2a~38~
replaced by a thin pyroelectric film 21, and that the hemispherical pillars are replaced by columnar pillars 25. All other features remain unchanged and are given the same reference numbers as in Figure 1. The thin film 21 in Figure 2 has a sufficiently low transverse thermal conductance such that there is negligible cross-talk between sensor elements. If necessary however discontinuous short slits could be made between adjacent -sensor elements.
Suitable materials for the pyroelectric film 21 are polyvinylidene fluoride (PVDF) or copolymers of vinylidene fluoride.
Figures 3, 4 and 5 illustrate one method of forming the pillars 25 shown in Figure 2. In the method shown, a thick photoresist layer 31 provides a wall surrounding a cavity in which the pillar 25 is grown by electrochemical deposition of the semiconductive polymer. A metal layer 33 is subsequently deposited on top of the pillar 25 to facilitate soldering of the pillar to the respective discrete electrodes 13. The photoresist layer is then etched away to leave the columnar structure shown in Figure 2.
It will be seen that in contrast to the device illustrated in .S. Patent No. 4,354,109, the pillars 25 have a diameter of only 25~ of the discrete electrodes 13. This is particularly advantageous as the thermal conductance per unit area of the electrode, the so called 'G~ value, will then be relatively low, typically in the order of 0.1 W per square centimetre per degree K.
It will be appreciated that whilst ln the devices described herebefore, the polymer plllars are fabricated by electrochemlcal depositlon, the lnventlon also includes devices in which the polymeric pillars are fabricated by vapour depositlon, for example by the polymerization of polyacetylene. Such alternative methods will also enable the deposition of the intrinsically semiconductive polymers in the requislte shape.
. ' . -:
Claims (9)
1. A thermal imaging device comprising an array of pyroelectric sensor elements, each element being at least partially supported by a respective pillar of an intrinsic semiconductor polymer material, the pillars providing an electrical path between the elements and a signal processing means.
2. A device according to Claim 1 in which the polymer material is chosen from polypyrrole, polyacetylene and polythiophene.
3. A device according to Claims 1 or 2 in which the pillars are substantially hemispherical.
4. A device according to Claim 3 in which the pillars are formed by the unrestricted electrochemical deposition of the semiconductor polymer material.
5. A device according to Claim 1 or Claim 2 in which the pillars are columnar.
6. A device according to Claim 5 in which the colum nar pillars are formed using an etching process.
7. A method of forming a thermal imaging device comprising an array of pyroelectric sensor elements, the method including the step of forming a plurality of pillars of an intrinsic semiconductor material, each pillar being effective to at least partially support a sensor element, the pillars providing an electrical path between the elements and a signal processing means.
8. A method according to Claim 7 in which the step of forming is an unrestricted electrochemical deposition process effective to produce hemispherical pillars.
9. A method according to Claim 7 in which the step of forming includes an etching process effective to produce columnar pillars.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8827661.3 | 1988-11-26 | ||
| GB888827661A GB8827661D0 (en) | 1988-11-26 | 1988-11-26 | Thermal imaging devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2003823A1 CA2003823A1 (en) | 1990-05-26 |
| CA2003823C true CA2003823C (en) | 1994-05-24 |
Family
ID=10647522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002003823A Expired - Fee Related CA2003823C (en) | 1988-11-26 | 1989-11-24 | Thermal imaging device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5130542A (en) |
| EP (1) | EP0371657A3 (en) |
| JP (1) | JPH02200453A (en) |
| CA (1) | CA2003823C (en) |
| GB (1) | GB8827661D0 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5314651A (en) * | 1992-05-29 | 1994-05-24 | Texas Instruments Incorporated | Fine-grain pyroelectric detector material and method |
| US6175114B1 (en) | 1993-10-29 | 2001-01-16 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US5625188A (en) * | 1993-10-29 | 1997-04-29 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| US5566046A (en) * | 1994-02-18 | 1996-10-15 | Texas Instruments Incorporated | Microelectronic device with capacitors having fine-grain dielectric material |
| KR0147584B1 (en) * | 1994-03-17 | 1998-08-01 | 윤종용 | Buried bit line cell manufacturing method |
| JPH07286894A (en) * | 1994-04-18 | 1995-10-31 | Fujitsu Ltd | Method for manufacturing infrared ray detector |
| GB9710843D0 (en) * | 1997-05-28 | 1997-07-23 | Secr Defence | A thermal detector array |
| FR2877492B1 (en) * | 2004-10-28 | 2006-12-08 | Commissariat Energie Atomique | BOLOMETRIC DETECTOR WITH THERMAL INSULATION BY CONSTRICTION AND INFRARED DETECTION DEVICE USING SUCH A BOLOMETRIC DETECTOR |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4067104A (en) * | 1977-02-24 | 1978-01-10 | Rockwell International Corporation | Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components |
| US4354109A (en) * | 1979-12-31 | 1982-10-12 | Honeywell Inc. | Mounting for pyroelectric detecctor arrays |
| US4505844A (en) * | 1982-11-17 | 1985-03-19 | Chevron Research Company | P-Type polyphenoxazine electroactive polymers |
| JPS60185185A (en) * | 1984-03-02 | 1985-09-20 | Sumitomo Electric Ind Ltd | Radiation detection method and apparatus thereof |
| FR2588007B1 (en) * | 1985-09-30 | 1988-04-08 | Commissariat Energie Atomique | NITROGEN ELECTRONIC CONDUCTIVE POLYMERS, PROCESSES FOR THEIR PREPARATION, ELECTROCHROMIC DISPLAY CELL AND ELECTROCHEMICAL GENERATOR USING THE SAME |
| GB8812955D0 (en) * | 1988-06-01 | 1988-10-05 | Emi Plc Thorn | Thermal imaging |
| US4893908A (en) * | 1988-06-27 | 1990-01-16 | Allied-Signal Inc. | Adjustable tint window with electrochromic conductive polymer |
-
1988
- 1988-11-26 GB GB888827661A patent/GB8827661D0/en active Pending
-
1989
- 1989-11-16 EP EP19890311856 patent/EP0371657A3/en not_active Ceased
- 1989-11-21 US US07/439,972 patent/US5130542A/en not_active Expired - Fee Related
- 1989-11-24 CA CA002003823A patent/CA2003823C/en not_active Expired - Fee Related
- 1989-11-27 JP JP1304946A patent/JPH02200453A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0371657A3 (en) | 1990-10-03 |
| CA2003823A1 (en) | 1990-05-26 |
| EP0371657A2 (en) | 1990-06-06 |
| US5130542A (en) | 1992-07-14 |
| GB8827661D0 (en) | 1989-05-17 |
| JPH02200453A (en) | 1990-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |