CA2030368A1 - Light-emitting diode having light reflecting layer - Google Patents

Light-emitting diode having light reflecting layer

Info

Publication number
CA2030368A1
CA2030368A1 CA2030368A CA2030368A CA2030368A1 CA 2030368 A1 CA2030368 A1 CA 2030368A1 CA 2030368 A CA2030368 A CA 2030368A CA 2030368 A CA2030368 A CA 2030368A CA 2030368 A1 CA2030368 A1 CA 2030368A1
Authority
CA
Canada
Prior art keywords
light
reflecting
radiation
reflecting layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2030368A
Other languages
French (fr)
Other versions
CA2030368C (en
Inventor
Toshihiro Kato
Hiromoto Susawa
Takashi Saka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30353889A external-priority patent/JP2720554B2/en
Priority claimed from JP1303539A external-priority patent/JPH03163883A/en
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Publication of CA2030368A1 publication Critical patent/CA2030368A1/en
Application granted granted Critical
Publication of CA2030368C publication Critical patent/CA2030368C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light-emitting diode having a light-generating layer for generating an electromagnetic radiation by electroluminescence, a light-emitting surface through which the radiation is emitted, and a light-reflecting layer remote from the light-emitting surface, for reflecting a portion of the radiation toward the light-generating layer so that the radiation reflected by the light-reflecting layer is also emitted through the light-emitting surface.
The light-reflecting layer consists of two or more interference type reflecting layers which includes one or more reflecting layer each capable of most efficiently reflecting a wave whose wavelength is longer than the nominal wavelength of the radiation. The light-emitting surface may have irregularity for irregularly reflecting the radiation, or an anti-reflection layer formed thereon by deposition.
CA002030368A 1989-11-22 1990-11-20 Light-emitting diode having light reflecting layer Expired - Lifetime CA2030368C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1-303538 1989-11-22
JP1-303539 1989-11-22
JP30353889A JP2720554B2 (en) 1989-11-22 1989-11-22 Light emitting diode with light reflecting layer
JP1303539A JPH03163883A (en) 1989-11-22 1989-11-22 Light-emitting diode with optical reflection layer

Publications (2)

Publication Number Publication Date
CA2030368A1 true CA2030368A1 (en) 1991-05-23
CA2030368C CA2030368C (en) 2000-03-28

Family

ID=26563544

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002030368A Expired - Lifetime CA2030368C (en) 1989-11-22 1990-11-20 Light-emitting diode having light reflecting layer

Country Status (4)

Country Link
US (1) US5132750A (en)
EP (1) EP0430041B1 (en)
CA (1) CA2030368C (en)
DE (1) DE69025273T2 (en)

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US5260589A (en) * 1990-11-02 1993-11-09 Norikatsu Yamauchi Semiconductor device having reflecting layers made of varying unit semiconductors
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JPH05304318A (en) * 1992-02-06 1993-11-16 Rohm Co Ltd Led array board
JP2798545B2 (en) * 1992-03-03 1998-09-17 シャープ株式会社 Semiconductor light emitting device and method of manufacturing the same
GB2270199B (en) * 1992-08-25 1995-05-10 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
US5386126A (en) * 1993-01-29 1995-01-31 Henderson; Gregory H. Semiconductor devices based on optical transitions between quasibound energy levels
JPH06338630A (en) * 1993-05-28 1994-12-06 Omron Corp Semiconductor light-emitting element, and optical detector, optical information processor, optical coupler and light-emitting device using the light-emitting element
US6900465B2 (en) * 1994-12-02 2005-05-31 Nichia Corporation Nitride semiconductor light-emitting device
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
DE19629920B4 (en) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
JP3706452B2 (en) * 1996-12-24 2005-10-12 ローム株式会社 Semiconductor light emitting device
DE19741609C2 (en) * 1997-09-20 2003-02-27 Vishay Semiconductor Gmbh Use of a superlattice structure comprising a plurality of heterojunction layer layers arranged one behind the other to improve the lateral current propagation in a light-emitting semiconductor diode
DE69839300T2 (en) * 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Light-emitting device
GB9901334D0 (en) 1998-12-08 1999-03-10 Cambridge Display Tech Ltd Display devices
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6501092B1 (en) * 1999-10-25 2002-12-31 Intel Corporation Integrated semiconductor superlattice optical modulator
US6946685B1 (en) 2000-08-31 2005-09-20 Lumileds Lighting U.S., Llc Light emitting semiconductor method and device
US6563142B2 (en) * 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
CA2419121A1 (en) * 2002-05-03 2003-11-03 Luxell Technologies, Inc. Dark layer for an electroluminescent device
US6900474B2 (en) 2002-12-20 2005-05-31 Lumileds Lighting U.S., Llc Light emitting devices with compact active regions
JP4315760B2 (en) * 2003-07-31 2009-08-19 株式会社沖データ Semiconductor light emitting device, LED head, image forming apparatus, and method of manufacturing semiconductor light emitting device
US7928424B2 (en) * 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US20060054919A1 (en) * 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
JP2007059873A (en) * 2005-07-26 2007-03-08 Sharp Corp Semiconductor light emitting device and its manufacturing method
DE102006004591A1 (en) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
JP5306589B2 (en) * 2006-11-17 2013-10-02 シャープ株式会社 Semiconductor light emitting device and manufacturing method thereof
TW200834969A (en) * 2007-02-13 2008-08-16 Epistar Corp Light-emitting diode and method for manufacturing the same
KR101449005B1 (en) 2007-11-26 2014-10-08 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP2011009524A (en) * 2009-06-26 2011-01-13 Hitachi Cable Ltd Light-emitting element, and method of making the light-emitting element
CN110189642B (en) * 2018-02-22 2021-10-26 和鑫光电股份有限公司 Display device
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1136218A (en) * 1965-12-14 1968-12-11 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor optical devices
JPS59165475A (en) * 1983-03-10 1984-09-18 Nec Corp Manufacture of semiconductor light emitting diode
JPH0669106B2 (en) * 1983-10-04 1994-08-31 ロ−ム株式会社 LED element
JPS6081888A (en) * 1983-10-12 1985-05-09 Rohm Co Ltd Surface light emitting laser and manufacture thereof
JPS6098689A (en) * 1983-11-02 1985-06-01 Mitsubishi Electric Corp Semiconductor device
JP2593845B2 (en) * 1985-08-30 1997-03-26 ソニー株式会社 Semiconductor light emitting device
JPS6432690A (en) * 1987-07-29 1989-02-02 Omron Tateisi Electronics Co Semiconductor multilayer reflecting mirror
JPH01200678A (en) * 1988-02-04 1989-08-11 Daido Steel Co Ltd Light-emitting diode
US4993036A (en) * 1988-09-28 1991-02-12 Canon Kabushiki Kaisha Semiconductor laser array including lasers with reflecting means having different wavelength selection properties
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
JP2953468B2 (en) * 1989-06-21 1999-09-27 三菱化学株式会社 Compound semiconductor device and surface treatment method thereof
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser

Also Published As

Publication number Publication date
CA2030368C (en) 2000-03-28
EP0430041A1 (en) 1991-06-05
DE69025273D1 (en) 1996-03-21
US5132750A (en) 1992-07-21
EP0430041B1 (en) 1996-02-07
DE69025273T2 (en) 1996-07-11

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed
MKEC Expiry (correction)

Effective date: 20121202