CA2052733A1 - Ringfield lithography - Google Patents

Ringfield lithography

Info

Publication number
CA2052733A1
CA2052733A1 CA2052733A CA2052733A CA2052733A1 CA 2052733 A1 CA2052733 A1 CA 2052733A1 CA 2052733 A CA2052733 A CA 2052733A CA 2052733 A CA2052733 A CA 2052733A CA 2052733 A1 CA2052733 A1 CA 2052733A1
Authority
CA
Canada
Prior art keywords
ringfield
fabrication
mask
lithography
bymoving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2052733A
Other languages
French (fr)
Other versions
CA2052733C (en
Inventor
Tanya E. Jewell
Kevin Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Tanya E. Jewell
Kevin Thompson
American Telephone And Telegraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanya E. Jewell, Kevin Thompson, American Telephone And Telegraph Company filed Critical Tanya E. Jewell
Publication of CA2052733A1 publication Critical patent/CA2052733A1/en
Application granted granted Critical
Publication of CA2052733C publication Critical patent/CA2052733C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Abstract

Ringfield projection apparatus using x-ray radiation e.g. of 1.30 .ANG.
wavelength is suitable for lithographic patterning in the fabrication of integrated circuits at design rules of 0.25 µm and below. The design permits reduction from an enlarged mask as well as substantial throughput, the latter due to unexpectedly large slit width, Incorporation of a folding mirror improves fabrication expediency bymoving the device being fabricated to the other side of the system from the mask.
CA002052733A 1990-10-10 1991-10-03 Ringfield lithography Expired - Fee Related CA2052733C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59534190A 1990-10-10 1990-10-10
US595,341 1990-10-10
US732,559 1991-07-19

Publications (2)

Publication Number Publication Date
CA2052733A1 true CA2052733A1 (en) 1992-04-11
CA2052733C CA2052733C (en) 1998-09-29

Family

ID=24382858

Family Applications (2)

Application Number Title Priority Date Filing Date
CA002052733A Expired - Fee Related CA2052733C (en) 1990-10-10 1991-10-03 Ringfield lithography
CA002052734A Expired - Fee Related CA2052734C (en) 1990-10-10 1991-10-03 Ringfield lithography

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA002052734A Expired - Fee Related CA2052734C (en) 1990-10-10 1991-10-03 Ringfield lithography

Country Status (8)

Country Link
US (1) US5315629A (en)
EP (1) EP0480617B1 (en)
JP (2) JP3544211B2 (en)
KR (2) KR100221678B1 (en)
CA (2) CA2052733C (en)
DE (1) DE69122018T2 (en)
HK (1) HK215996A (en)
TW (1) TW205098B (en)

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US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
US6229595B1 (en) 1995-05-12 2001-05-08 The B. F. Goodrich Company Lithography system and method with mask image enlargement
US5512759A (en) * 1995-06-06 1996-04-30 Sweatt; William C. Condenser for illuminating a ringfield camera with synchrotron emission light
US5805365A (en) * 1995-10-12 1998-09-08 Sandia Corporation Ringfield lithographic camera
US5815310A (en) * 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
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US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
US5686728A (en) * 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
KR100338043B1 (en) * 1997-05-23 2002-11-23 김영근 Method of manufacturing acorn tea product
US5956192A (en) * 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
TW594438B (en) * 1997-11-07 2004-06-21 Koninkl Philips Electronics Nv Three-mirror system for lithographic projection, and projection apparatus comprising such a mirror system
US5920380A (en) 1997-12-19 1999-07-06 Sandia Corporation Apparatus and method for generating partially coherent illumination for photolithography
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion
WO1999042902A2 (en) * 1998-02-20 1999-08-26 The Regents Of The University Of California Reflective optical imaging systems with balanced distortion
US6226346B1 (en) 1998-06-09 2001-05-01 The Regents Of The University Of California Reflective optical imaging systems with balanced distortion
US6014252A (en) * 1998-02-20 2000-01-11 The Regents Of The University Of California Reflective optical imaging system
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DE10100265A1 (en) * 2001-01-08 2002-07-11 Zeiss Carl Lighting system with grid elements of different sizes
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US6331710B1 (en) 1998-12-02 2001-12-18 Zhijiang Wang Reflective optical systems for EUV lithography
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
USRE42118E1 (en) * 1999-02-15 2011-02-08 Carl-Zeiss-Smt Ag Projection system for EUV lithography
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US6033079A (en) * 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
US6188513B1 (en) 1999-03-15 2001-02-13 Russell Hudyma High numerical aperture ring field projection system for extreme ultraviolet lithography
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
US6426506B1 (en) * 1999-05-27 2002-07-30 The Regents Of The University Of California Compact multi-bounce projection system for extreme ultraviolet projection lithography
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US6667484B2 (en) 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
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Also Published As

Publication number Publication date
EP0480617B1 (en) 1996-09-11
EP0480617A3 (en) 1992-07-08
JP2002305143A (en) 2002-10-18
KR100221678B1 (en) 1999-09-15
DE69122018D1 (en) 1996-10-17
KR930003250A (en) 1993-02-24
US5315629A (en) 1994-05-24
DE69122018T2 (en) 1997-02-06
JPH04262524A (en) 1992-09-17
CA2052733C (en) 1998-09-29
CA2052734C (en) 1998-09-29
KR100221691B1 (en) 1999-09-15
HK215996A (en) 1996-12-27
EP0480617A2 (en) 1992-04-15
TW205098B (en) 1993-05-01
JP3544211B2 (en) 2004-07-21
CA2052734A1 (en) 1992-04-11
KR920008845A (en) 1992-05-28

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