CA2054668A1 - Micromachined differential pressure transducers and method of producing the same - Google Patents
Micromachined differential pressure transducers and method of producing the sameInfo
- Publication number
- CA2054668A1 CA2054668A1 CA2054668A CA2054668A CA2054668A1 CA 2054668 A1 CA2054668 A1 CA 2054668A1 CA 2054668 A CA2054668 A CA 2054668A CA 2054668 A CA2054668 A CA 2054668A CA 2054668 A1 CA2054668 A1 CA 2054668A1
- Authority
- CA
- Canada
- Prior art keywords
- membrane
- substrate
- bridge
- overpressure
- allow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0618—Overload protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49103—Strain gauge making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4981—Utilizing transitory attached element or associated separate material
- Y10T29/49812—Temporary protective coating, impregnation, or cast layer
Abstract
Microminiature pressure transducers are formed on semiconductor substrates such as silicon and include a membrane which spans a cavity over the substrate, with the membrane being mounted to and sealed to the substrate at the peripheral edges of the membrane. The bottom of the cavity forms an overpressure stop to prevent over deflections of the membrane toward the substrate. An overpressure stop formed as a bridge of a material such as nickel extends above the membrane and is spaced therefrom to allow the membrane to deflect freely under normal pressure situations but prevent over deflections. The thickness of the polysilicon membrane and the spacing between the membrane and the overpressure stops is preferably in the range of 10 micrometers or less, and typically in the range of one micrometer. The overpressure stop bridge is formed utilizing deep X-ray lithography to form a well-defined bridge structure. The gap between the membrane and the bottom surface of the bridge is established with a sacrificial layer, such as a polyimide film, which dissolves in a solvent. The transducer is formed utilizing processing techniques which do not affect the performance of the membrane as a pressure sensor and which allow the substrate to have further micromechanical or microelectronic devices formed thereon.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/626,581 US5189777A (en) | 1990-12-07 | 1990-12-07 | Method of producing micromachined differential pressure transducers |
US626,581 | 1990-12-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2054668A1 true CA2054668A1 (en) | 1992-06-08 |
CA2054668C CA2054668C (en) | 1996-07-02 |
Family
ID=24510999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002054668A Expired - Lifetime CA2054668C (en) | 1990-12-07 | 1991-10-31 | Micromachined differential pressure transducers and method of producing the same |
Country Status (9)
Country | Link |
---|---|
US (2) | US5189777A (en) |
EP (1) | EP0490486B1 (en) |
JP (1) | JP2702025B2 (en) |
KR (1) | KR960011932B1 (en) |
AT (1) | ATE133256T1 (en) |
CA (1) | CA2054668C (en) |
DE (1) | DE69116532T2 (en) |
IL (1) | IL100192A (en) |
MX (1) | MX9102259A (en) |
Families Citing this family (123)
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US5323656A (en) * | 1992-05-12 | 1994-06-28 | The Foxboro Company | Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
US5378583A (en) * | 1992-12-22 | 1995-01-03 | Wisconsin Alumni Research Foundation | Formation of microstructures using a preformed photoresist sheet |
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- 1991-11-11 DE DE69116532T patent/DE69116532T2/en not_active Expired - Lifetime
- 1991-11-11 EP EP91310404A patent/EP0490486B1/en not_active Expired - Lifetime
- 1991-11-11 AT AT91310404T patent/ATE133256T1/en not_active IP Right Cessation
- 1991-11-28 IL IL10019291A patent/IL100192A/en not_active IP Right Cessation
- 1991-11-28 MX MX9102259A patent/MX9102259A/en not_active IP Right Cessation
- 1991-12-06 KR KR1019910022334A patent/KR960011932B1/en not_active IP Right Cessation
- 1991-12-06 JP JP3322724A patent/JP2702025B2/en not_active Expired - Lifetime
-
1992
- 1992-10-05 US US07/957,505 patent/US5357807A/en not_active Expired - Lifetime
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KR920013639A (en) | 1992-07-29 |
DE69116532D1 (en) | 1996-02-29 |
DE69116532T2 (en) | 1996-10-02 |
IL100192A (en) | 1994-05-30 |
EP0490486A3 (en) | 1993-02-24 |
MX9102259A (en) | 1992-06-01 |
EP0490486B1 (en) | 1996-01-17 |
IL100192A0 (en) | 1992-08-18 |
US5189777A (en) | 1993-03-02 |
JP2702025B2 (en) | 1998-01-21 |
CA2054668C (en) | 1996-07-02 |
ATE133256T1 (en) | 1996-02-15 |
EP0490486A2 (en) | 1992-06-17 |
US5357807A (en) | 1994-10-25 |
KR960011932B1 (en) | 1996-09-04 |
JPH04294234A (en) | 1992-10-19 |
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