CA2057977A1 - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- CA2057977A1 CA2057977A1 CA2057977A CA2057977A CA2057977A1 CA 2057977 A1 CA2057977 A1 CA 2057977A1 CA 2057977 A CA2057977 A CA 2057977A CA 2057977 A CA2057977 A CA 2057977A CA 2057977 A1 CA2057977 A1 CA 2057977A1
- Authority
- CA
- Canada
- Prior art keywords
- emitting device
- light emitting
- conductivity type
- cladding layer
- yas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Abstract
An AlGaAs/GaAs system light emitting device comprises a GaAs substrate doped with a first conductivity type impurity, a first conductivity type AlyGa1-yAs first cladding layer, an AlxGa1-xAs (0 < x < y) active layer, and an AlyGa1-yAs second cladding layer having a conductivity type opposite to the first conductivity type, which are successively disposed on the substrate. The light emitting device further comprises an AlzGa1-zAs (z 0) buffer layer which is disposed between the GaAs substrate and the first cladding layer, to which a first conductivity impurity is doped to such a high dopant concentration that the intensity of photoluminescence light generated due to band to band transitions is reduced, and has a smaller energy band gap than the energy of the light emitted from the light emitting device. Therefore, a long lifetime semiconductor light emitting device having no sub peak in the light emission spectrum can be easily produced with good yield.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3042706A JPH04258182A (en) | 1991-02-12 | 1991-02-12 | Semiconductor light emitting device |
JPHEI.3-042706 | 1991-02-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2057977A1 true CA2057977A1 (en) | 1992-08-13 |
CA2057977C CA2057977C (en) | 1997-02-25 |
Family
ID=12643514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002057977A Expired - Fee Related CA2057977C (en) | 1991-02-12 | 1991-12-18 | Semiconductor light emitting device |
Country Status (5)
Country | Link |
---|---|
US (1) | US5272362A (en) |
JP (1) | JPH04258182A (en) |
CA (1) | CA2057977C (en) |
DE (1) | DE4203134A1 (en) |
GB (1) | GB2253303B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3323324B2 (en) * | 1993-06-18 | 2002-09-09 | 株式会社リコー | Light emitting diode and light emitting diode array |
US5442202A (en) * | 1993-10-29 | 1995-08-15 | Mitsubishi Cable Industries, Ltd. | Semiconductor light emitting element |
FR2726126A1 (en) * | 1994-10-24 | 1996-04-26 | Mitsubishi Electric Corp | LED device mfr. by thermally bonding LEDs |
JP4023893B2 (en) * | 1997-06-06 | 2007-12-19 | 沖電気工業株式会社 | Light emitting element array and light emitting element |
DE19962037A1 (en) * | 1999-12-22 | 2001-07-12 | Vishay Semiconductor Gmbh | Illuminating diode used in wireless data transmission has a light-producing layer sequence made of gallium aluminum arsenide and a neighboring p-conducting semiconductor layer |
DE10039945B4 (en) * | 2000-08-16 | 2006-07-13 | Vishay Semiconductor Gmbh | A method of fabricating a dual heterostructure GaAIAs light emitting semiconductor device and corresponding semiconductor device |
RU2394305C2 (en) * | 2007-07-20 | 2010-07-10 | Гэлиэм Энтерпрайзис Пти Лтд | Semiconductor device with built-in contacts (versions) and method of making semiconductor devices with built-in contacts (versions) |
JP5792486B2 (en) * | 2011-03-18 | 2015-10-14 | 株式会社東芝 | Semiconductor light emitting device and optical coupling device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2070859B (en) * | 1980-02-07 | 1984-03-21 | Stanley Electric Co Ltd | Hetero-junction light-emitting diode |
US4416012A (en) * | 1981-11-19 | 1983-11-15 | Rca Corporation | W-Guide buried heterostructure laser |
US4461007A (en) * | 1982-01-08 | 1984-07-17 | Xerox Corporation | Injection lasers with short active regions |
FR2538171B1 (en) * | 1982-12-21 | 1986-02-28 | Thomson Csf | SURFACE EMITTING LIGHT EMITTING DIODE |
FR2555811B1 (en) * | 1983-11-30 | 1986-09-05 | Radiotechnique Compelec | METHOD FOR PRODUCING LOW SPECTRAL WIDTH LIGHT EMITTING DIODES, AND DIODES OBTAINED BY THIS PROCESS |
JPS60253283A (en) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | Semiconductor light-emitting element |
US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
JPS6288389A (en) * | 1985-10-15 | 1987-04-22 | Toshiba Corp | Semiconductor light emitting element |
GB2225671B (en) * | 1986-04-30 | 1990-10-10 | Sharp Kk | A semiconductor laser device and a method of making same |
JPS63150986A (en) * | 1986-12-15 | 1988-06-23 | Sharp Corp | Semiconductor laser |
JPS63240083A (en) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | Light-emitting diode |
US4821278A (en) * | 1987-04-02 | 1989-04-11 | Trw Inc. | Inverted channel substrate planar semiconductor laser |
JPS6431134A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Driving method for pnpn optical thyristor |
JPH01130577A (en) * | 1987-11-17 | 1989-05-23 | Mitsubishi Electric Corp | Light emitting diode |
US4864369A (en) * | 1988-07-05 | 1989-09-05 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light-emitting diode |
JPH03160714A (en) * | 1989-11-20 | 1991-07-10 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JP2898347B2 (en) * | 1990-04-23 | 1999-05-31 | イーストマン・コダックジャパン株式会社 | Light emitting diode array |
-
1991
- 1991-02-12 JP JP3042706A patent/JPH04258182A/en active Pending
- 1991-12-18 GB GB9126843A patent/GB2253303B/en not_active Expired - Fee Related
- 1991-12-18 CA CA002057977A patent/CA2057977C/en not_active Expired - Fee Related
-
1992
- 1992-01-30 US US07/828,225 patent/US5272362A/en not_active Expired - Lifetime
- 1992-02-04 DE DE4203134A patent/DE4203134A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE4203134A1 (en) | 1992-08-13 |
GB2253303B (en) | 1995-07-12 |
JPH04258182A (en) | 1992-09-14 |
US5272362A (en) | 1993-12-21 |
CA2057977C (en) | 1997-02-25 |
GB2253303A (en) | 1992-09-02 |
GB9126843D0 (en) | 1992-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |