CA2082021C - Method of stabilizing the surface properties of objects to be thermally treated in a vacuum - Google Patents

Method of stabilizing the surface properties of objects to be thermally treated in a vacuum

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Publication number
CA2082021C
CA2082021C CA002082021A CA2082021A CA2082021C CA 2082021 C CA2082021 C CA 2082021C CA 002082021 A CA002082021 A CA 002082021A CA 2082021 A CA2082021 A CA 2082021A CA 2082021 C CA2082021 C CA 2082021C
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Canada
Prior art keywords
diaphragm
substrate
spin
glass
covered
Prior art date
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Expired - Lifetime
Application number
CA002082021A
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French (fr)
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CA2082021A1 (en
Inventor
Frank Hegner
Ulfert Drewes
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Endress and Hauser SE and Co KG
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Endress and Hauser SE and Co KG
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Publication of CA2082021A1 publication Critical patent/CA2082021A1/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0075Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/25Oxides by deposition from the liquid phase
    • CCHEMISTRY; METALLURGY
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/006Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/213SiO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/11Deposition methods from solutions or suspensions
    • C03C2218/113Deposition methods from solutions or suspensions by sol-gel processes
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6581Total pressure below 1 atmosphere, e.g. vacuum
    • CCHEMISTRY; METALLURGY
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04Ceramic interlayers
    • C04B2237/06Oxidic interlayers
    • C04B2237/062Oxidic interlayers based on silica or silicates
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/10Glass interlayers, e.g. frit or flux
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/122Metallic interlayers based on refractory metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/125Metallic interlayers based on noble metals, e.g. silver
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12Metallic interlayers
    • C04B2237/126Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127The active component for bonding being a refractory metal
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32Ceramic
    • C04B2237/34Oxidic
    • C04B2237/343Alumina or aluminates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40Metallic
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/59Aspects relating to the structure of the interlayer
    • C04B2237/592Aspects relating to the structure of the interlayer whereby the interlayer is not continuous, e.g. not the whole surface of the smallest substrate is covered by the interlayer
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/43Electric condenser making
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49103Strain gauge making

Abstract

To avoid any deterioration of the surface properties of objects of ceramic, glass, or a single-crystal insulat-ing material which are subjected to a vacuum temperature process, a thin layer of a spin-on glass solution with a silicon-dioxide equivalent of not more than 10% is applied to the objects by spinning or spraying prior to the vacuum temperature process. This is particularly important to avoid the strong moisture dependence of capac-itive or resistive pressure sensors having a substrate and a diaphragm to be joined together, forming a chamber sealed at least at the edge. The diaphragm is covered with a layer of silicon carbide, niobium, or tantalum serving as one capacitor electrode, or the surface portion of the diaphragm which will lie within the chamber is coated with at least one strain gage; the portion of the substrate surface which will lie within the chamber is coated with at least one additional capacitor elec-trode or, in the case of the resistive pressure sensor, not coated therewith; over the entire surface portion of the substrate and diaphragm thus coated, a thin layer of the spin-on glass solution is applied and dried;

contact is made to the capacitor electrodes or strain gages through the substrate and/or diaphragm, and sub-strate and diaphragm are brazed together by means of a ring-shaped part of active brazing material, which also serves as a spacer, or by means of a sufficient amount of active brazing paste.

Description

Method of Stabilizing the Surface Properties of Objects to be Thermally Treated in a Vacuum BACKGROUND OF THE IN~ENTION

The present invention relates to a method of stabilizing the surface properties of objects which are subjected to a vacuum temperature process.

Such a process step is used, for example, in the manufac-ture ofpressure sensors. US-A-50 50 034, for example, de-scribes the manufacture of a capacitive pressure sensor having a substrate and diaphragm which are to be joined together, particularly in a defined spaced relationship and parallel to each other, forming a chamber sealed at least at the edge, the substrate and/or the diaphragm being made of ceramic, glass or a single-crystal insulat-ing material. This method comprises the following steps.
The diaphragm is covered with a layer of silicon carbide, niobium or tantalum which serves as one of the capacitor electrodes; the portion of the substrate surface which wilL lie within the chamber is covered with at least one additional layer of any of the aforementioned conductive materials which serves as the second etc. capacitor elec-trode; contact is made to the capacitor electrodes through the substrate, and substrate and diaphragm are high-vacuum-brazed together by means of a ring-shaped part of active brazing material, which also serves as a spacer, or by means of an amount of active brazing paste suf-ficient for holding the two parts at the desired distance from each other.

Pressure sensors thus manufactured are extremely moisture-sensitive, which greatly reduces the Q of the capacitor(s) in particular. Investigations have shown that this moisture sensitivity is not due to changes in the electrodes or the strain-gage material during the high-vacuum brazing, but that in this process step the uncovered surface por-tions of substrate and diaphragm change so that they, instead of retaining their very good insulating ability, become semiconducting and highly moisture-sensitive.

For example, an experimental capacitive reference pres-sure sensor with a 60-pF precision capacitor and a 60-pF
reference capacitor exhibited, at zero pressure, a capacitance difference of 1.5 pF at a tan-delta difference of 0.05 and a reference-ca.paci-tance difference of 3 pF at a tan-delta difference of 0.1 for a change in relative humidity from 30% to 85%
(at a temperature of 20C).

Furthermore, prior to the high-vacuum brazin~, an ex-perimental substrate of alumina ceramic wi:th 96% purity on which two concentric coatings.corresponding to said one electrodes of the above precision and reference capaci-tors were deposited at a distance of 1 mm from ea~ch other, with the inner electrode having a di.ameter of 16 mm, showed a resistance, measured between these two electrodes, - 2~82021 of 4X1013 ohms in a dry atmosphere (= 0% relativ;e humidity), but a resistance of 1X1011 ohms at 70% relative humidity (again at 20C).
After the high-vacuum brazjn~, the co,rresponddn~ ~re sistance values were 3X1013 ohms for a dry atmosphere and only 3X108 ohms for 70% relative humidity.

These invesigations led to the recognition that as a re-sult of the high-vacuum brazing, those surface portions of the substrate and diaphragm which will not be covered within the chamber to be formed lose oxygen or nitrogen atoms, i.e., thatthese surface portions are reduced. This re-sults in these portions becoming semiconducting, for example, which causes the above-mentioned degredation of the Q of the capacitors and the changes in capacitance.

Thus, as a rule, vacuum temperature processes do not leave the surface properties of the treated objects un-affected and mostly deteriorate them.

The invention serves to solve this problem.

SUMMARY OF THE INVENTION

Accordingly, the invention consists in a method of stabi lizing the sl~rface properties of ob-jects of ceramic, glass, or a single-crystal insulating material which are subjected to a temperature process, particularly a high-temperature process, in a vacuum, particularly a high vacuum, and to which a thin layer of a spin-on glass solution with a silicon-dioxide equiva-lent of not more than 10% is appl;ed by spinning or spraying, and dried.

2ns202l ~ he invention fur.her consists in a method of manufacturing a capacitive pressure sensor having a substrate and a diaphragm to be joined together, particularly in a defined spaced relationship and parallel to each other, forming a chamber sealed at least at the edge, with the substrate and/or the diaphragm made of ceramic, glass, or a single-crystal insulating material, comprising the following steps:
- The diaphragm is covered with a layer of silicon carb;de, niobium, or tantalum serving as one capa-citor electrode;
- the portion of the substrate surface which will lie within the chamber is covered with at least one additional layer of any of sa;d conducting materials serving as the second etc. capacitor electrode(s);
- over the entire surface portion of the substrate and diaphragm thus covered, a thin layer of a spin-on glass solution with a silicon-dioxide equivalent of not more than 10% is applied ~y spinning or spraying, and dried;
- contact is made to the capacitor electrodes through the substrate and, if necessary, through the dia-phragm,and - substrate and diaphragm are high-vacuum-brazed to-gether by means of a ring-shaped part of active brazing material, which also serves as a spacer, or by means of an amount of active brazing paste sufficient for holding the two parts a~ the de-sired distance from each other.

The invention further consists in a method of manufacturing a resistive pressure sensor having a substrate and a diaphragm to be joined together, ceramic, glass, or single-crystal insulating materials, namely in semiconductor techno;ogy in the fabrication of integrated circuits, and there for a cdifferent purpose, namely for planarizing their surfaces, i.e., for levelling surface irregularities ca~sed by the multiple process steps, cf. an article by S. K. Gupta, "Spin-On Glass for Dielectric Planarization", published in the journal "Microelectror,ic Manufacturing and Testing", April 1989.

Surprisingly, the spin-on glass solutions described in that article can be used to eliminate the above-described disadvantages associated with the materials mentioned above.

The invention will now be explained, by way of example, with reference to the accompanying drawings, in which like parts are designated by like reference characters.

BRIEF DESCRIPTION OF THE DRAWINGS

Fig. 1 is a top view of a capacitive pressure sensor made in accordance with the ;nvention;

Fig. 2 is a section taken along line A-8 of Fig. 1;
.
Fig. 3 is a section, corresponding to that of Fig. Z, of a resistive pressure sensor made in accordance with the invention;
Fig. 4 shows a section of the two parts of the pres-sure sensor of Fig. 2 following the appLica-tion of the spin-on glass solution, and - 2~82021 Fig. 5 shows a secti~n of the two parts of the pres-sure sensor of Fig. 3 following the applica-tion of the spin-on glass soLution.

DETAILED DESCRIPTION OF THE INVENTION

The fundamental idea of the invention will now be described with respect to the manufacture of the pressure sensors shown in the figures, i.e., there is no separate figure f-or the subject matter of claim 1, since such a figure would only show an arbitrary object with a thin layer around it, which is obvious.

The capacitive pressure sensor 10 shown in Figs. 1 and 2 has a diaphragm 11 in the form of a circular plate with plane-parallel surfaces which is joined around the periph-ery to a circular substrate 12 at a defined distance d therefrom, thus forming a chamber 13 between the top side of the substrate 12 and the opposite surface of the dia-phragm 11.

The diaphragm 11 may be formed from ceramic, preferably alumina ceramic with a purity of 96 wt.%, glass, or a single-crystal insulating material, such as sapphire.
The materialsof substrate 12 and diaphragm 11 may differ.

The diaphragm 11 is elastic, so that it can deform when a force or pressure is applied to it. The substrate 12 may be solid or rigid, which can be achieved, for example, by a thickness greater than that of the diaphragm. It may also be designed as a flat, elastic and, hence, de-flectable plate like the diaphragm.

The surfaces of diaphragm 11-and substrate 12 which face each other are provided with circular capacitor elec-trodes 14, 15 of a suitable metal, namely niobium, tantalum or conductive silicon carbide, which lie opposite each other within the chamber 13. The electrode 14 covers the diaphragm 11 completely, but it may also be provided only in the chamber area. Each of the eLectrodes 14, 15 may be covered with a protective layer 21, 22 at its chamber-side, free surface, as is shown in Fig. 2. This protective layer is made, for example, of one of the oxides of the material from which the electrodes are formed. In the case of tantalum, this is preferably tantalum pentoxide.

Connected to the electrodes 14 and 15 are leads 16 and 17, respectively, which are brought out through the sub-strate to its rear side. The electrical connection to the diaphragm electrode 14 is made via the lead 16 and the active brazing material of the joint, but this is not mandatory.

If the diaphragm electrode does not cover the entire dia-phragm surface but is only provided in the region of the chamber 13 as mentioned above, contact must be made to it through the diaphragm 11 in the same manner as in the case of the electrode on the substrate. To this end, contactis made to the leads 16 and 17 by means of inserts 18 and 19, respectively, of active brazing material. In-stead of these inserts, leads covered with active brazing material can be used.

An active brazing solder is a hard solder which contains -_ 9 _ at least one highly reactive element, such as titanium, zirconium, beryllium, hafnium, or tantalum. During the brazing process, these reactive elements wet the sur-faces of the parts to be brazed. In the case of (aluminum-) oxide ceramic, the high affin;ty of the reactive elements for oxygen causes a reaction with the ceramic, which results in the formation of mixed oxides and free chemical valences. The reactive component of the brazing-solder is embedded in a matrix of other alloying elements, such as silver/copper, which form the active brazing material proper.

The two electrodes 14, 15 form a capacitor whose capaci-tance depends on the distance between the electrodes.
when the diaphragm 11 deforms under the action of a force or pressure, the distance between the electrodes changes, thereby changing the capacitance of the pressure sensor.
This change can be measured by means of an electronic circuit to be connected to the leads 16, 17, and can thus be a measure of the pressure or force acting on the diaphragm 11.

The resistive pressure sensor 10' shown in Fig. 3 in a sectional view has a diaphragm 11' in the form of a cir-cular plate with plane-parallel surfaces which is joined around the circumference to a circular substrate 12' in a defined spaced relationship d therefrom, so that a chamber 13' is formed between the top side of the sub-strate 12' and the opposite surface of the diaphragm 11'.
What was said above about the materials suitable for, and the elasticity of, the substrate and diaphragm ofi the capacitive pressure sensor applies equally to the resis-tive pressure sensor.

Attached to one surfaceofthe diaphragm 11' is at least one strain gage 14, e.g., a half-bridge arrangement of two strain gages or a full-bridge arrangement of four strain gages, which is connected to two leads 16', 17' brought out through the diaphragm 11', i.e., to the rear side thereof, in a gas-tight manner.

The resistance of the strain gages is dependent on the deflection of the diaphragm 11' resulting from the action of a force or pressure. This change in resistance can be measured by means of an electronic circuit to be con-nected to the leads 16', 17', and can thus be a measure of the pressure or force acting on the diaphragm 11'.

If the chamber 13, 13' is evacuated, only an external pressure is applied to the capacitive or resistive pressure sensor 10,10'. If the chamber has an external opening, e.g., a hole in the substrate 12, 12', the pressure sensor can be used as a reference-pressure sensor.

The layer of the aforementioned spin-on glass solution deposited in accordance with the invention, which is trans-formed into a cross-linked silicon-dioxide layer by the high-temperature brazing process, is not visible on the finished pressure sensor and, hence, in Figs. 1 to 3.

By contrast, in Fig. 4, the diaphragm 11 and the sub-strate 12 of the capacitive pressure sensor of Figs. 1 and 2 are shown in a condition after a spin-on glass solution with a silicon-dioxide equivalent of not more than 10% was deposited, which can be done by spinning or spraying and results in the spin-on glass layer 23. The 2082~21 latter is quite thin, namely only about 200 nm thick, so that it is not drawn to scale in Fig. 4.

Fig. 5 shows the diaphragm 11' and the substrate 12' of the resistive pressure sensor 10' of Fig. 3 in a similar view, again in the condition after a spin-on glass solu-tion with a silicon-dioxide equivalent of not more than 10% was applied by spinning or spraying, which results in the spin-on glass layer 23'. The latter, too, is only about 200 nm thick, so that it is not drawn to scale in Fig. 5,either.

The diaphragm 11, 11' and the substrate 12, 12' are brazed together in a high vacuum of at least 10 5 hPa (= mbar) better in the range - of 10 6 hPa (= mbar). A very good vacuum is necessary to avoid reactions of the respective brazing metal, particularly titanium, with the residual gas and achieve good wetting. The brazing temperature is advantageously 30C to 100C above the liquidus temperature to achieve an optimum reaction as well as high strength and gas tightness of the joint.

The spin-on glass layer 23, 23' surprisingly seals the uncovered surface portions of diaphragm 11, 11' and sub-strate 12, 12' so perfectly that the above-mentioned re-duction during the brazing process practically no longer occurs.

This is shown by the following results of measurements performed on a capacitive reference-pressure sensor fabricated according to the invention which had the same dimensions as the above-mentioned reference-pressure sensor, and which was measured under the same conditions (temperature 20C, zero pressure).

2082û21 First, as above, only à substrate 12 was examined and coated with the spin-on glass solution. After the coated substrate h~d dried and then been heated to 400 C, a resistance of 1X1013 ohms was measured at 0% relative humidity, and 1x101 ohms at 70% relative humidity. This is already a significant improvement over the above values for an uncoated substrate.

If the coated substrate was heated to approximately 900C, which temperature corresponds to the brazing-temperature range of the pressure sensor, a resistance of Sx10 ohms was measured at 70% relative humidity; the value for 0% relative humidity was unchanged.

This considerably improved resistance also has an effect on the characteristics of a capacitive pressure sensor:
Between 30% and 85% relative humidity, the capacitance difference was only 0.2 pF at a tangent-delta difference of 0.005, and the reference-capacitance difference was 0.4 pF at a tangent-delta difference of O . 0 1 .

In the case of the pressure sensors described above, care must be taken in selecting the composition of the spin-on glass soLution with the aid of manufacturer's data to ensure that after the brazing process, no hydrocarbon bonds, such as in siloxanes, will occur in the cross-linked silicon dioxide, i.e., that pure silicate, phospho-silicate, or the like is present, because otherw;se the humidity sensitivity will not be sufficiently reduced.

Claims (4)

1. A method of stabilizing the surface properties of ob-jects of ceramic, glass, or a single-crystal insulating material which are subjected to a temperature process, particularly a high-temperature process, in a vacuum, particularly a high vacuum, and to which a thin layer of a spin-on glass solution with a silicon-dioxide equiva-lent of not more than 10% is applied by spinning or spraying, and dried.
2. A method of manufacturing a capacitive pressure sen-sor having a substrate and a diaphragm to be joined to-gether,particularly in a defined spaced relationship and parallel to each other, forming a chamber sealed at least at the edge, with the substrate and/or the diaphragm made of ceramic, glass, or a single-crystal insulating material, comprising the following steps:
- The diaphragm is covered with a layer of silicon carbide, niobium, or tantalum serving as one capa-citor electrode;
- the portion of the substrate surface which will lie within the chamber is covered with at least one additional layer of any of said conducting materials serving as the second etc. capacitor electrode(s);
- over the entire surface portion of the substrate and diaphragm thus covered, a thin layer of a spin-on glass solution with a silicon-dioxide equivalent of not more than 10% is applied by spinning or spraying, and dried;
- contact is made to the capacitor electrodes through the substrate and, if necessary, through the dia-phragm, and - substrate and diaphragm are high-vacuum-brazed to-gether by means of a ring-shaped part of active brazing material, which also serves as a spacer, or by means of an amount of active brazing paste sufficient for holding the two parts at the de-sired distance from each other.
3. A method of manufacturing a resistive pressure sensor having a substrate and a diaphragm to be joined together, particularly in a defined spaced relationship and paral-lel to each other, forming a chamber sealed at least at the edge, with the substrate and/or the diaphragm made of ceramic, glass or a single-crystal insulating material, comprising the following steps:
- The surface portion of the diaphragm which will lie within the chamber is covered with at least one strain gage;
- over the entire surface portion of the diaphragm thus covered and over the entire surface portion of the substrate which will lie opposite said sur-face portion of the diaphragm, a thin layer of a spin-on glass solution with a silicon-dioxide equiva-lent of not more than 10% is applied by spinning or spraying, and dried;
- contact is made to the at least one strain gage through the diaphragm, and _ substrate and diaphragm are high-vacuum-brazed to-gether by means of a ring-shaped part of active brazing material, which also serves as a spacer, or by means of an amount of active brazing paste sufficient for holding the two parts at the de-sired distance from each other.
4. A method as claimed in claim 2 wherein prior to the application of the spin-on glass solution, the capa-citor electrodes (14, 15) are covered with a protective layer (21).
CA002082021A 1991-11-30 1992-11-03 Method of stabilizing the surface properties of objects to be thermally treated in a vacuum Expired - Lifetime CA2082021C (en)

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EP91120640.7 1991-11-30
EP91120640A EP0544934B1 (en) 1991-11-30 1991-11-30 Method of stabilizing the surface properties of objects to be thermally treated in a vacuum

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Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582665Y2 (en) * 1992-08-17 1998-10-08 株式会社トーキン Capacitive pressure sensor
GB2276762B (en) * 1993-04-01 1996-10-30 Plessey Semiconductors Ltd Mounting arrangement for semiconductor devices
US6570221B1 (en) 1993-07-27 2003-05-27 Hyundai Electronics America Bonding of silicon wafers
EP0674164B1 (en) * 1994-03-18 1997-07-30 ENVEC Mess- und Regeltechnik GmbH + Co. Capacitive pressure sensor or differential pressure sensor
US6039918A (en) * 1996-07-25 2000-03-21 Endress + Hauser Gmbh + Co. Active brazing solder for brazing alumina-ceramic parts
US5917264A (en) * 1996-09-05 1999-06-29 Nagano Keiki Co Ltd Electrostatic capacitance type transducer and method for producing the same
US5880371A (en) * 1997-01-27 1999-03-09 Texas Instruments Incorporated Pressure transducer apparatus and method for making
US5965821A (en) * 1997-07-03 1999-10-12 Mks Instruments, Inc. Pressure sensor
US20040099061A1 (en) * 1997-12-22 2004-05-27 Mks Instruments Pressure sensor for detecting small pressure differences and low pressures
US6267009B1 (en) * 1998-12-14 2001-07-31 Endress + Hauser Gmbh + Co. Capacitive pressure sensor cells or differential pressure sensor cells and methods for manufacturing the same
US6374680B1 (en) * 1999-03-24 2002-04-23 Endress + Hauser Gmbh + Co. Capacitive pressure sensor or capacitive differential pressure sensor
US6578427B1 (en) * 1999-06-15 2003-06-17 Envec Mess- Und Regeltechnik Gmbh + Co. Capacitive ceramic relative-pressure sensor
US6319617B1 (en) 1999-12-17 2001-11-20 Agere Systems Gaurdian Corp. Oxide-bondable solder
DE50114896D1 (en) * 2000-07-26 2009-06-25 Endress & Hauser Gmbh & Co Kg CAPACITIVE PRESSURE SENSOR
DE10052053A1 (en) * 2000-10-19 2002-04-25 Endress Hauser Gmbh Co Pressure measurement cell has contact pin fed through base body to electrode for capacitance measurement; contact pin, jointing solder and membrane bed form smooth surface
FR2818676B1 (en) * 2000-12-27 2003-03-07 Freyssinet Int Stup METHOD FOR DISASSEMBLING A PRE-STRESS CABLE AND DEVICE FOR IMPLEMENTING THE SAME
US6869007B2 (en) * 2001-01-26 2005-03-22 Lucent Technologies Inc. Oxidation-resistant reactive solders and brazes
JP2002323394A (en) * 2001-04-26 2002-11-08 Kyocera Corp Package for pressure detector
KR100411476B1 (en) * 2001-09-24 2003-12-18 주식회사코닉스 Method for manufacturing capacitance type vacuum sensor and vacuum detecting device by using the same
DE10163567A1 (en) * 2001-12-21 2003-07-17 Endress & Hauser Gmbh & Co Kg Pressure sensor with a hydrophobic coating
US6960911B2 (en) * 2002-01-29 2005-11-01 Kabushiki Kaisha Toshiba Strain sensor
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
US6993973B2 (en) * 2003-05-16 2006-02-07 Mks Instruments, Inc. Contaminant deposition control baffle for a capacitive pressure transducer
ATE461437T1 (en) * 2004-01-27 2010-04-15 Mettler Toledo Ag STRAIN STRIPS WITH MOISTURE PROTECTION THROUGH INHOMOGENEOUS INORGANIC LAYER ON SMOOTHING POLYMER LAYER (ORMOCER) AND SLOT ARRANGEMENT
US7201057B2 (en) * 2004-09-30 2007-04-10 Mks Instruments, Inc. High-temperature reduced size manometer
US7141447B2 (en) * 2004-10-07 2006-11-28 Mks Instruments, Inc. Method of forming a seal between a housing and a diaphragm of a capacitance sensor
US7137301B2 (en) * 2004-10-07 2006-11-21 Mks Instruments, Inc. Method and apparatus for forming a reference pressure within a chamber of a capacitance sensor
JP2006322783A (en) * 2005-05-18 2006-11-30 Dainippon Screen Mfg Co Ltd Pressure sensor and substrate processing apparatus
US20080202251A1 (en) * 2007-02-27 2008-08-28 Iee International Electronics & Engineering S.A. Capacitive pressure sensor
DE102007026243A1 (en) * 2007-06-04 2008-12-11 Endress + Hauser Gmbh + Co. Kg Capacitive pressure sensor
US8974891B2 (en) * 2007-10-26 2015-03-10 Coi Ceramics, Inc. Thermal protection systems comprising flexible regions of inter-bonded lamina of ceramic matrix composite material and methods of forming the same
DE102009027742A1 (en) 2009-07-15 2011-01-27 Endress + Hauser Gmbh + Co. Kg Capacitive ceramic pressure measuring cell and pressure sensor with such a pressure measuring cell
DE102009054909A1 (en) * 2009-12-17 2011-06-22 Endress + Hauser GmbH + Co. KG, 79689 Ceramic product and process for its production
US8096186B2 (en) * 2010-03-24 2012-01-17 Carefusion 303, Inc. Systems and methods for measuring fluid pressure within a disposable IV set connected to a fluid supply pump
ES2414230T5 (en) * 2010-12-07 2016-03-08 Vega Grieshaber Kg Pressure measuring cell
DE102010063065A1 (en) * 2010-12-14 2012-06-14 Endress + Hauser Gmbh + Co. Kg Pressure sensor and method for its manufacture +
DE102012110152A1 (en) * 2012-07-11 2014-05-15 Endress + Hauser Gmbh + Co. Kg Method for joining ceramic bodies by means of an active brazing alloy, assembly having at least two ceramic bodies joined together, in particular a pressure measuring cell
DE102012106236A1 (en) * 2012-07-11 2014-01-16 Endress + Hauser Gmbh + Co. Kg Method for joining ceramic bodies by means of an active brazing alloy, assembly having at least two ceramic bodies joined together, in particular a pressure measuring cell
US9103738B2 (en) 2012-09-07 2015-08-11 Dynisco Instruments Llc Capacitive pressure sensor with intrinsic temperature compensation
US8943895B2 (en) 2012-09-07 2015-02-03 Dynisco Instruments Llc Capacitive pressure sensor
US8984952B2 (en) 2012-09-07 2015-03-24 Dynisco Instruments Llc Capacitive pressure sensor
DE102013106045A1 (en) 2013-06-11 2014-12-11 Endress + Hauser Gmbh + Co. Kg Capacitive ceramic pressure measuring cell and method for its production
DE102014214083C5 (en) * 2014-07-18 2021-04-08 Schott Ag Device and method for the thermal treatment of an annular region of an inner surface of a glass container made from a borosilicate tubular glass
CN104476655B (en) * 2014-11-14 2017-07-28 哈尔滨工业大学 A kind of gel centrifugal forming method of ceramic idiosome
EP3375264B1 (en) * 2015-11-11 2020-08-05 Endress+Hauser SE+Co. KG Process to stabilize the resistance between conductive tracks
US10724907B2 (en) * 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2329632A (en) * 1938-12-19 1943-09-14 Jr Charles P Marsden Method of coating glass
US3811918A (en) * 1971-12-20 1974-05-21 Owens Illinois Inc Process for producing protective glass coatings
US4458537A (en) * 1981-05-11 1984-07-10 Combustion Engineering, Inc. High accuracy differential pressure capacitive transducer
JPS58142206A (en) * 1982-02-18 1983-08-24 Tokyo Electric Co Ltd Strain sensor
JPS60213837A (en) * 1984-04-09 1985-10-26 Tokyo Electric Co Ltd Load cell
JPS62268167A (en) * 1986-05-15 1987-11-20 Komatsu Ltd Thin-film pressure sensor
JPS6381867A (en) * 1986-09-25 1988-04-12 Yokogawa Electric Corp Semiconductor diffusion strain gauge
JPH02122572A (en) * 1988-10-31 1990-05-10 Aisin Seiki Co Ltd Pressure sensor equipped with protective layer
DE3910646A1 (en) * 1989-04-01 1990-10-04 Endress Hauser Gmbh Co CAPACITIVE PRESSURE SENSOR AND METHOD FOR THE PRODUCTION THEREOF
US5050034A (en) * 1990-01-22 1991-09-17 Endress U. Hauser Gmbh U. Co. Pressure sensor and method of manufacturing same

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DK0544934T3 (en) 1997-03-17
CA2082021A1 (en) 1993-05-31
JPH05264384A (en) 1993-10-12
DE59108247D1 (en) 1996-11-07
US5400489A (en) 1995-03-28
EP0544934A1 (en) 1993-06-09
JPH0718768B2 (en) 1995-03-06
EP0544934B1 (en) 1996-10-02

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