CA2083121C - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- CA2083121C CA2083121C CA002083121A CA2083121A CA2083121C CA 2083121 C CA2083121 C CA 2083121C CA 002083121 A CA002083121 A CA 002083121A CA 2083121 A CA2083121 A CA 2083121A CA 2083121 C CA2083121 C CA 2083121C
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- Prior art keywords
- layer
- mirror
- semiconductor
- cavity
- semiconductor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
Abstract
This invention embodies a LED in which an optical cavity of the LED, which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (RB ~ 0.99) and a mirror with a low to moderate reflectivity (RT ~ 0.25-0.99). The DBR
mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective top mirror above the active region leads to an unexpected improvement in directional light emission characteristics. The use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in terms of a more directed (anisotropic) emission.
mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective top mirror above the active region leads to an unexpected improvement in directional light emission characteristics. The use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in terms of a more directed (anisotropic) emission.
Description
AN IMPROVED LIGHT EMITTING DIODE
Technical Field This disclosure pertains to light emitting diodes.
Back~round of the Invention Light emitting diodes (LEDs) which emit light spont~neously under forward bias con-lition~ have a variety of applir~tion~ such as in~ir~tor lights, elements of visual displays, light sources for optical data links, optical fiberco.-..--..t-ic~tion, and others. Of special interest for use in optical fiber communications are devices in which the light is emitted from the top surface of the 10 device.
Prior art LEDs, used for optical fiber commllnir~tion~ typically emit light through an aperture in a top electrode which is upon a substrate layer of the device. A typical prior art LED includes in a descen-ling sequence a top electrode, a substrate, a top confining layer, an active layer, a bottom confining layer, a bottom 15 contact layer, a centrally located bottom electrode of relatively small area, a dielectric layer upon the rem~in(ler of the bottom contact layer, and a heat-sink. The top electrode has a centrally located aperture through which the spontaneous light emission takes place. The light emission, from the LED may be picked-up by an optical fiber, an end of which may abut the surface of the substrate within the 20 electrode aperture. To catch greater proportion of the emitted light, the LED may be provided with a vertical well which is etched coaxially in the substrate down to the surface of the confining layer, this enables one to bring an end of the optical fiber closer to the source of the emission. In another version, a lens may be integrally formed in the surface of the substrate to capture and focus into the core of the optical 25 fiber the light being emitted through the circular opening in the top electrode. For example see S. M. Sze, Semiconductor Devices, Physics and Technolo~y, John Wiley & Sons, New York, 1985, pp. 258-267, and an article by Niloy K. Dutta, "III-V Device Technologies For Lightwave Applications", AT&T Techni~l Journal, Vol. 68, No. 1, January-February 1989, pages 5-18.
Unfortunately, the present-day LEDs suffer from numerous deficiencies.
Light emission in the LED is spontaneous, and, thus, is limited in time on the order of 1 to 10 nanoseconds. Therefore, the mo~ tion speed of the LED is also limitedby the spontaneous lifetime of the LED. This limits the maximum modulation frequency to fma,~=200-400 Mbit/s. Next, light emission in the active region is 35 isotropic, that is in all directions, such that only a fraction of the emission may leave the body through the opening in the top electrode. Spectral linewidth of the LED is
Technical Field This disclosure pertains to light emitting diodes.
Back~round of the Invention Light emitting diodes (LEDs) which emit light spont~neously under forward bias con-lition~ have a variety of applir~tion~ such as in~ir~tor lights, elements of visual displays, light sources for optical data links, optical fiberco.-..--..t-ic~tion, and others. Of special interest for use in optical fiber communications are devices in which the light is emitted from the top surface of the 10 device.
Prior art LEDs, used for optical fiber commllnir~tion~ typically emit light through an aperture in a top electrode which is upon a substrate layer of the device. A typical prior art LED includes in a descen-ling sequence a top electrode, a substrate, a top confining layer, an active layer, a bottom confining layer, a bottom 15 contact layer, a centrally located bottom electrode of relatively small area, a dielectric layer upon the rem~in(ler of the bottom contact layer, and a heat-sink. The top electrode has a centrally located aperture through which the spontaneous light emission takes place. The light emission, from the LED may be picked-up by an optical fiber, an end of which may abut the surface of the substrate within the 20 electrode aperture. To catch greater proportion of the emitted light, the LED may be provided with a vertical well which is etched coaxially in the substrate down to the surface of the confining layer, this enables one to bring an end of the optical fiber closer to the source of the emission. In another version, a lens may be integrally formed in the surface of the substrate to capture and focus into the core of the optical 25 fiber the light being emitted through the circular opening in the top electrode. For example see S. M. Sze, Semiconductor Devices, Physics and Technolo~y, John Wiley & Sons, New York, 1985, pp. 258-267, and an article by Niloy K. Dutta, "III-V Device Technologies For Lightwave Applications", AT&T Techni~l Journal, Vol. 68, No. 1, January-February 1989, pages 5-18.
Unfortunately, the present-day LEDs suffer from numerous deficiencies.
Light emission in the LED is spontaneous, and, thus, is limited in time on the order of 1 to 10 nanoseconds. Therefore, the mo~ tion speed of the LED is also limitedby the spontaneous lifetime of the LED. This limits the maximum modulation frequency to fma,~=200-400 Mbit/s. Next, light emission in the active region is 35 isotropic, that is in all directions, such that only a fraction of the emission may leave the body through the opening in the top electrode. Spectral linewidth of the LED is
- 2 -broad, of the order of 1.8kT where kT is the thermal energy. This results in chromatic dispersion in optical mllltimf~r fibers, i.e., pulse broA~ening, which limits the maximum distance of t~.~n~mi~if~n of light emitted by an LED to a few kilometers at high tr~ncmission rates.
Attempts were made to improve the ~lÇf~ .Anre of the LEDs. For example an LED disclosed in U.S. Patent 5,058,035 issued September 10, 1991 to Hideto Sugawara et al. represents an attempt to increase emi~ion of light from the top surface of the LED by providing a special current blocking semiconductor layer between a centrally located top electrode and the l~ escent cavity so as to have a 10 higher light extraction efficiency and luminescence. The current from the topelectrode is widely spread by current blocking layer over the light emitting region leading to higher light extraction and higher lllmin~nr,e than with conventiQn~lLEDs. This LED includes in an ascending order a bottom electrode, a substrate, abottom layer, an active layer, a top confining layer, a current blocking layer, a dot-15 like top contact layer, and a dot-like top electrode overlaying the contact layer.
Except for the top elect~.~de area, the light emi~sion takes place from the upper semiconductor surface and not through the substrate. However, while such an ernission is suitable for display and LED lamps, this emicsion is not suitable for optical fiber comm~lnication requiring a narrow line width of spontaneous emission.
Another attempt to improve luminescence output of an LED is described in an article by T. Kato et al., "GaAs/GaAlAs surface emitting IR LED with Braggreflector grown by MOCVD", Journal f Crystal Growth, Vol. 107 (1991) pages 832-835, North Holland. The structure of this LED resembles generally the structure of the Sugawara et al. device. Namely, in the structure, the substrate is at 25 the bottom of the device, and a top electrode is in the center of the top surface of the device. However, in this device the current blocking layer is absent, the cont~rting layer overlies all of the surface of the top confining layer, and the top surface of the contacting layer is coated with an antireflection layer to prevent reflecdons from the top surface-air interface. This LED also includes a muldlayer distributed Bragg 30 reflector (DBR) positioned between the substrate and the bottom con~inillg layer of the device. The purpose of the DBR is to reduce absorption of light emission by the substrate. In this device, as in the Sugawara et al. device, the emi~sion takes place from the periphery of the LED and, except for the area covered by the top electrode, primarily from the top surface. While such an emi~sion is suitable for display and 35 LED lamps, this emission is also not suitable for optical fiber co.,~ nic~tion.
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Attempts were made to improve the ~lÇf~ .Anre of the LEDs. For example an LED disclosed in U.S. Patent 5,058,035 issued September 10, 1991 to Hideto Sugawara et al. represents an attempt to increase emi~ion of light from the top surface of the LED by providing a special current blocking semiconductor layer between a centrally located top electrode and the l~ escent cavity so as to have a 10 higher light extraction efficiency and luminescence. The current from the topelectrode is widely spread by current blocking layer over the light emitting region leading to higher light extraction and higher lllmin~nr,e than with conventiQn~lLEDs. This LED includes in an ascending order a bottom electrode, a substrate, abottom layer, an active layer, a top confining layer, a current blocking layer, a dot-15 like top contact layer, and a dot-like top electrode overlaying the contact layer.
Except for the top elect~.~de area, the light emi~sion takes place from the upper semiconductor surface and not through the substrate. However, while such an ernission is suitable for display and LED lamps, this emicsion is not suitable for optical fiber comm~lnication requiring a narrow line width of spontaneous emission.
Another attempt to improve luminescence output of an LED is described in an article by T. Kato et al., "GaAs/GaAlAs surface emitting IR LED with Braggreflector grown by MOCVD", Journal f Crystal Growth, Vol. 107 (1991) pages 832-835, North Holland. The structure of this LED resembles generally the structure of the Sugawara et al. device. Namely, in the structure, the substrate is at 25 the bottom of the device, and a top electrode is in the center of the top surface of the device. However, in this device the current blocking layer is absent, the cont~rting layer overlies all of the surface of the top confining layer, and the top surface of the contacting layer is coated with an antireflection layer to prevent reflecdons from the top surface-air interface. This LED also includes a muldlayer distributed Bragg 30 reflector (DBR) positioned between the substrate and the bottom con~inillg layer of the device. The purpose of the DBR is to reduce absorption of light emission by the substrate. In this device, as in the Sugawara et al. device, the emi~sion takes place from the periphery of the LED and, except for the area covered by the top electrode, primarily from the top surface. While such an emi~sion is suitable for display and 35 LED lamps, this emission is also not suitable for optical fiber co.,~ nic~tion.
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- 3 -Therefore, it is desirable to design a LED with improved light emitting characteristics suitable for optical fiber communications.
Summary of the Invention In accordance with one aspect of the invention there is provided use of a 5 semiconductor structure, said semiconductor structure comprising a plurality of layers of semiconductor material and a bottom and a top electrode on opposite surfaces of said structure, wherein said semiconductor material is selected from Group III-V and Group II-VI compound semiconductor materials, and wherein said structure comprises in an ascending order: a substrate of a first conductivity type, a bottom confining layer 10 of the first conductivity type, an active layer, a top confining layer of a second conductivity type, said top and bottom confining layers and the active layer forming an optical cavity, and a semiconductor contact layer of the second conductivity type, said top electrode being in contact with an upper surface of the said contact layer forming an ohmic contact with the contact layer, and a bottom mirror and a top mirror 15 placed on opposite sides of said optical cavity and forming a Fabry-Perot resonant cavity, said bottom mirror having a reflectivity, RH~ greater than or equal to 99% and being located between the bottom confining layer and the substrate, and said topmirror having a reflectivity, RT, in the range 25% < RT < 99% and being located near the top confining layer, said structure is used as a light emitting diode (LED) in which 20 said active layer spontaneous light emission takes place under forward bias conditions, and the reflectivity, RT~ of the top mirror is selected to enhance anisotropic tr~n~mis~ion of the spontaneous emission directionally through the top mirror.
In a preferred embodiment the active layer is GaAs, the low refractive index material comprises AlAs and the high refractive material is selected from GaAs, 25 Alo 05GaO 95As and Alo l4GaO 86As.
More specifically, this invention embodies a LED with improved light emitting characteristics. The optical cavity of the LED is near the top electrode and the light emission takes place through a central portion of the top surface of the LED
which is opposite to the substrate side of the device. The optical cavity of the LED, 30 which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (RB 2 0.99) and a mirror with a 2 q - 3a-low to moderate reflectivity (RT - 0.25 - 0.99). The DBR mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective mirror (top) above the active region leads to an unexpected improvement in directional light emission characteristics. The 5 use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in 10 terms of a more directed (anisotropic) emission.
Brief Description of the Drawin~s FIG. 1 is a schematic representation of a RCLED according to one exemplary embodiment, including a bottom DBR mirror adjacent the substrate and asemiconductor-air interface top mirror forming a Fabry-Perot resonant optical cavity 15 with an optical cavity of the LED;
FIG. 2 is a plot of light emission intensity versus applied current, the upper curve being for a RCLED of FIG. 1 and the lower curve being for a conventional LED
of similar general construction but without the DBR mirror;
FIG. 3 is a schematic representation of a RCLED according to another 20 exemplary embodiment, including a bottom DBR mirror and a top mirror with lower reflectivity which form a Fabry-Perot resonant optical cavity with an optical cavity of the LED;
~ ,.IC ' FIG. 4 is a plot of current-voltage characteristic of the RCLED
represented in FIG. 3;
FIG. 5 is a plot of an optical output power versus injection current at room ~ pe~dture of an RCLED repl~senled in FIG. 3; and FIG. 6 is a plot of an electrolllminescence ~ ,um at room temperature of the RCLED represented in FIG. 3; the spontaneous lllminescence linewidth is narrower than thermal energy, kT, at room le~ c;
FIG. 7 is a schem~tic l~pl~ise...t~tion of an RCLED according to still another exemplary embo liment, depicting still another version of the top rnirror, FIG. 8 is a schem~tic re~l~sentalion of an RCLED according to yet further exemplary embo liment, depicting a further version of the top mirror.
Detailed Description This invention embodies a new concept of an LED, hereinafter referred to as a Resonant Cavity LED or simply RCLED. In this RCLED a s~ontaneously 15 electroluminescent optical cavity of the LED is placed within a reson~nt Fabry-Perot cavity. The optical cavity includes at least one confining layer, but typically includes a top and a bottom confining layers and an active layer or region sandwiched between the two. The optical cavity is placed between two mirrors of the Fabry-Perot cavity such that the optical cavity is within a reson~nt Fabry-Perot 20 cavity defined by a low absorbent and highly reflective distributed Bragg reflector (DBR) bottom mirror (RB - 0.99) and a top mirror of low to moderate reflectivity(RT - 0.25- 0.99, preferably 0.50 to 0.99). The bottom DBR mi~or is placed between the substrate and the optical cavity, while the top mirror is above the top confining layer. Thé length (L) of the optical cavity is relatively small. The optical 25 cavity length (L) is a low integer multiple of ~ /2, so that L = N~/2 wherein N is a low integer, from 1 to 5, and ~ is the wavelength of the spontaneous emission of the active layer. The optical plv~.lies of this RCLED are superior to the conventional type LEDs. This structure also permits production of the RCLEDs by planar technology so that the fabrication process complexity is only moderately increased 30 relative to conventional LEDs. The structure of the improved RCLED may be based on III-V or II-VI compound semiconductors, with III-V semiconductors including GaAs, AlAs, AlGaAs, GaInAs, InP, AlInP, GaInPAs" AlGaInAs, AlGaInPAs and their alloys.
The placement of the active electroluminescent region within the 35 Fabry-Perot resonant cavity results in several clear advantages of the RCLED over conventional LEDs, some of which are outlined hereinbelow.
Firstly, enh~nred spon~1eous emi~sicn in RCLEDs results from the placement of the optical cavity into the reson~nt Fabry-Perot cavity. The probability for spontaneous emission is pl~polLional to the optical matrix elern~-nt of the initial and final electron state and plupol~ional to the optical mode density. The carrier 5 lifetime change is due to the strongly varying optical mode density in a Fabry-Perot cavity. The optical mode density in a Fabry-Perot resonator is strongly enh~nced for on-resonance wavelengths. While off-resonance optical tr~n~ition~ have a longer lifetime, on-resonance transitions have a shorter liretillle. Spontaneous emission of the RCLED is therefore "channeled" into the optical resonance modes of the cavity.
10 As a consequence, on-resonance transitions of the RCLEDs are enh~nced Secondly, emission of light through the top contact side of the RCLED
device is enhanced due to the highly reflective mirror ~ljacent to the bottom confinement layer. Light emission in conventional LEDs is typically close to isotropic and typically takes place through the substrate. In the RCLED structure, 15 however, emission through the substrate is blocked by a bottom DBR mirror which has a much higher reflectivity than the top reflector mirror, i.e. RB >> RT. As a consequence, light propagating along the optical axis of the cavity exits the cavity predominantly through the top mirror. The anisotropic emi~sion spectrum of the RCLED can enhance the emission through the top side by a factor of two.
Thirdly, the improved spectral purity of the RCLED makes the device well suited for optical fiber communic~ion purposes. Conventional LEDs have spectral linewidths determined by the density of states in the conduction and valence band and the therrnal energy of carriers or typical linewidths on the order of 1.8 kT, where kT is the thermal energy. A far better spectral purity can be achieved with the 25 RCLED. The emission linewidth is a function of the finesse of the cavity. Thus, the linewidth is not a fixed p~lleter but can be designed by means of the cavity characteristics. In silica optical fibre appli~tion~ the spectral purity is of prime importance and can be achieved by a high finesse cavity design. Since the spontaneous emission from the active region is constrained to emit into the modes of 30 the optical cavity, the finesse of the cavity allows one to estim~te the linewidth of the RCLED. The finesse of a coplanar Fabry-Perot cavity is given by:
F = ~ = 2Jr ~ ln~¦RBRT )~
where Lc is the optical cavity length, ~v and v are bandwidth and separation of the Fabry-Perot resonance modes and RB and RT are the reflectivities of the bottom and ~3~
the top mirrors, respectively. In this equation absorption losses are ne~lecte l For example, LC = ~, hv = 1.42 eV, and RBRT = 0.9, yields a finesse of F _ 120.
The corresponding linewidth is h~v _ 12 meV which is much n~,o..~r than kT at room ~~ ature. Due to the inherently high spectral purity of the RCLED, the 5 device is expected to have less chromadc dispersion if used for optical tr~n~mi~sion in silica fibres.
For illustration purposes, the present invention will be described with reference to devices based on AlxGa~ As/GaAs material system with x ranging from 0 to 1. For the same purposes, el~m~nts of the various emb(Yl;...~nl~ of the 10 RCLED are not drawn to scale.
FIG. 1 is a general schematic f~present~tion of one exemplary embodiment of an RCLED according to this invention. RCLED of this embodiment, denomin~ted generally as 10, comprises a bottom electrode 11, a substrate 12, a quarter-wave stack of a plurality of pairs of semiconduct( r layers forming a bottom 15 DBR mirror, 13, one layer of each pair having a refractive index dirrel~ t from the refractive index of another layer of the pair, a bottom confining layer, 14; an active layer or region, 15; a top confining layer, 16; a h,ighly-doped contact layer, 17, and a top electrode, 18, having a centrally located a~l~ 19. In this exemplary embodiment the top mirror of ,the Fabry.Perot cavity is formed by an interface 20 between contact layer 17 and air within apell~, 19. Such a mirror has a reflectivity of the order of 0.25 to 0.35. The light emission takes place through the apelLul~.
While not shown, additional confining and buffer layers may be included into thestructure.
Construction of RCLED lO,i~ accordance with the invention, may be 25 described as being generally as follows:
Metal electrode 11 from 1 to lO~m thick is formed on the bottom surface of substrate 11 to provide for current flow perpen-lirul~rly through the active region to cause spontaneous emission. Typically, bottom electrode 11 is formed after the device is assembled. The RCLED may be mounted with bottom electrode 30 l l in contact with a heat-sink plate, e.g. of copper or some other heat-conductive material which does not cont~min~te the materials of the device.
Substrate 12 is a heavily doped n+-type(or p-type) III-V or II-VI
semiconductor, such as GaAs or AlGaAs. Typically, the thi~ness of the substrate ranges from 100 to 500 ~lm and the doping concentration of the substrate ranges 35 from lx10l7 to lxlOl9cm~3. In some applications, such as optical-electronic integrated circuitry, substrate 12 may be first grown on a master substrate of silicon, which is in common to a number of devices grown on the master substrate.
Quarterwave stack 13 is composed of a plurality of pairs (or periods) of semiconductor layers forming a multilayer bottom DBR mirror with a nu~llb~,r of pairs typically ranging from 10 to 40. One sçmiron(lllctor layer in each pair has a 5 higher index of refraction than the other semicon~lctor layer of the pair. Thethickn~ss of each semiconductor in the pair equals ~4n, wherein ~ is the opticalspontaneous emission wavelength of the active region of the LED and n is the refractive index of the semiconductor material. For a device with an active region spontaneously emitting at ~=0. 8711m, such as GaAs, a 4ua~ l ~ave stack of pairs of 10 such semiconductors as GaAs and AlAs with refractive indices of 3.64 and 2.97, respectively, will consist of 62 nm thick GaAs layer and 73 nm thick AlAs layer while a stack of AlAs and Alo 05 GaO 95 As will consist of pairs of layers 73 nm and 60 nm thick each, respectively. It is important that the m~teri~ of the bottom mirror are so selected that the total reflective index, R, of the mirror is high, such as 15 RB _ 0.99, while absorbence of luminescent emission by the multilayer mirror structure is minim;~l Bottom confining layer 14 and top confining layer 16 are provided to confine active region 15 and to adjust the length (L) of the optical cavity formed by the active region and the confining layers. (These confining layers may also be 20 referred to as cladding or phase-m~tching layers.) The optical cavity length (L) of the RCLED should be an integer multiple of ~/2 so that L = N~/2, with N being a low integer, such as from 1 to 5, and ~ being an optical wavelength of the spontaneous emission of the active layer. Typically, the thickness of each confining layer ranges from 0 to 3 ~lm. To obtain constructive illtt.r~.~nce, the thickness of 25 the confining layers should be a multiple of ~/2 or ~/4 (a~s~-ming a phase change of 0~ and 7~). In the exemplary embodiment the confining regions are of Al ,c Ga ~ As, with x ranging from 0.1 to 0.4.
Active region 15 is a region in which spontaneous light emission takes place under proper bias. In the exemplary embo~im~nt, the active region is a thin 30 lightly doped (lx10l6 - sx10l7 cm-3) layer of GaAs. The active region may be in a forrn of a single layer or a region confined laterally by confining semicon~ ctor material or by insulating material. The latter may be formed by etching a peripheral region of the active layer so as to form an active region mesa and filling the peripheral region by regrowth. Alternatively, proton ions, such as H+ or O+ may be 35 implanted into the peripheral region of the active layer. The single active layer may be replaced by a single or a multiple quantum well (QW) structure composed of a 2~ 2~
narrow gap semiconductor about 1 to 30 nm thick, co~.r.~-eA by wide-gap semiconductQr. Alternatively, the single layer forming the active region may be replaced by a superlattice structure which is a mulliqu~nlun~ well structure with very thin barriers. The active region (QW, MQW or bulk semieonduct~?r) is preferably 5 placed at the ~ntinode position of the optical int~,naily within the cavity.
Highly doped contact layer 17 is provided in thirl~ness of from 0.01 to 0.1 llm to f~cilit~te establishing a non-alloyed ohmic contact bel-.~n the top confining layer 16 and the top electrode 18. Typically, the doping concentration in the contact layer 16 ranges from lx10l9 to lxl020cm~3.
Electrode 18 is a non-alloyed ohmic contact select~ from various electrode metals and alloys used for this purpose in the art, inclu-ling Au-Zn and Au-Be. Such contacts are deposited by ev~pol~ion at te~ tures ranging from 100 to 500~C, preferably from 100 to 250~C. Higher lcm~l~lu~s could result in undesirable alloying of the metal into the semiconductor leading to a rough interfaee 15 morphology. Aperture 19, from 20 ~m to 150 ~lm in diameter, may be defined by a resist formed prior to the deposition of electrode 18 or by standard photolithographic techniques after electrode 18 is formed.
Semiconductor layers 12 through 17 are grown upon substrate 11 by such known methods as metal organic vapor phase epitaxy (MOVPE), metal organic 20 chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (VPE). Preferably, the RCLED structures are grown by Molecular Beam Epitaxy (MBE) technology in a Ribier 2300 MBE system on heavily doped substrates 11. After layers 12 through 17 are grown, the partiallyformed structure is transferred to a separate high vacuum chamber where a metal 25 layer is deposited on the surface of contact layer 17 as a non-alloyed ohmic contact in a desired thit~knçss forming the top electrode of the structure. Bottom electrode 11, e.g., of In, may then be formed on the bottom surface of substrate 12.
Finally, the bottom side of the RCLED may be mounted via the bottom electrode orby means of an electrically and therm~lly conductive adhesive, such as epoxy or 30 silver solder or indium solder on a slab of a metal, such as Cu, Au, Be, which serves as a heat sink in common to other devices.
In a specific example of the first exemplary embofliment, the RCLED is an AIxGal_"As/GaAs system structure comprising in an ~cending sequence 1 to 2,um thick In electrode 11, about 50011m thick (001) oriented heavily doped 35 (2xlOI8cm~3) n+-GaAs substrate 12, bottom milTor 13 con~i~ting of a quarter-wave stack of 30 pairs of n+-type (sx10~7 - SX1018 cm-3) semicon-luctor layers 2~
forming the DBR mirror structure, each pair of the stack consisting of a 73 nm thick layer of n+-AlAs and 60 nm thick layer of Al0.l4GaO.86As. The reflectivity spectrum of the DBR structure (bottom mirror 13), as l~as~d with a Perkin-Elmer Lambda 9 UV/VIS/NIR Spec~uphoto,~ er, showed a broad high reflectivity band S centered at -0.87~1m with a reflectivity > 99 percent. The bottom mirror is followed by bottom confinemPnt layer 14 of n+-Al0.20GaO.80As (SxlOl7cm~3) about 140nm thick, lightly doped (SxlOl6cm~3) active layer 15 of p~-GaAs about 10 nm thick, and top confinem~-nt layer 16 of p+-Al0.30GaO70As (SxlOl6cm~3) about 80 nm thick. A thin heavily Be doped (5 xlOl9cm~3) contact layer 17 of lO p+ -AlO I4GaO 86AS~ about 0.0625 ~m thick, is deposited on the top confinement layer to facilitate ohmic contacting. Top electrode 18, selected from such metalalloys as Au-Zn and Au-Be, is then deposited in a sep~ate high vacuum chamber ina thickness of from 50 nm to 300 nm. Thel~af~r, a 20 ~m in ~ m~ter a~.Lule 19 isformed in electrode 18 by etching. ~ltern~tively, a~~ e 19 may be defined by a 15 resist prior to the deposition of the top electrode.
Operation of the RCLED according to the first exemplary embodiment, leads to an increase in the quality of light intensity as colllpalcd to an LED of similar construction but without the DBR mirror. These differences are represented in FIG. 2 wherein the upper line represents the R~ FD according to this invention and 20 the lower line represents the convention~l LED.
Additional exemplary embodiments of the RCLED structures were formed with different top mirrors. In each of these, most of the structure is similar to that of the first emb~liml-nt, except for the top mirror and top electrode. Wherever applicable, the same numerals are used in dirrel~l~t exemplary embodiments to 25 designate the same elements of the device as in the first exemplary embodiment. In each of the additional exemplary embodiments, the resonant cavity consists of bottom DBR mirror 13, bottom confinement layer 14, active region 15, top confinement layer 16, contact layer 17 and a top mirror-electrode. As a specificexample of the materials the resonant cavity is formed by n-type 30 AlAs/Al0 l4GaO86As bottom DBR mirror 13, n-type Al030GaO~7oAs bottom confinement layer 14, GaAs active region 15, p-type Al0 30GaO~70As top confinement layer 16, a heavily Be doped p+-type Alo l4GaO 86As contact layer 17and a top mirror-electrode. The materials of the top mirror-electrode will be discussed with reference to each separate exemplary embodiment.
2~
FIG. 3 is a schematic represen~tinn of a second exemplary embodiment of an RCLED, 30, according to the invention. In this Figure, a thin Ag, Al or Au dot electrode is being used as top electrode 38 which serves ~imllltan-oously as theelectrode and as the top mirror of the R(~ FD.
S Silver is chosen as the pr~irtll~d metallic IlPil,ol/electrode because of its good conductivity and high reflectivity at wavelen~ths around 0.87~m, which corresponds to the energy band gap of the active m~terial GaAs. ~ tiQn~l currentguiding (e.g. mesa-etch or proton implantation) is not required in the structure due to an occurrence of only small amount of current spreading. The Ag contact has 10 excellent ohmic characteristics. The thin Ag film has reflectivities ranging from approximately 40 percent to 97 percent for thicknesses ranging from about 5 nm to 60 nm, as determined by an Anritsu MS900lB optical spectrum analyzer and an incandescent "white" tungsten light source, with higher reflectivides being for thicker layers and lower reflectivities being for thinner Ag layers. The reflectivity 15 characteristics of these mirrors may be adjusted as needed by adjusting the thi~l~ness of the Ag layer.
Tran~mi~sion Electron Microscopy (TEM) study of the RCLED
structures grown in a Ribier 2300 MBE system disclosed the uniro~ y of the GaAs active region and the interface sharpness of the bottom mirror ~lluclul~,. X-ray 0/2~
20 scans of Ag layers grown in a sepal~lc high vacuum chamher with various thicknesses up to 200 nm deposited at 120~C, showed that the Ag films are polycrystalline. Standard photolithographic techniques were employed to define circular Ag dots 38 with diallle~tl~ ranging from 5 to 100 micro~ t~l~. An etchant of 3HNO3:4H2O was used to etch away unwanted Ag regions, which leaves a 25 clean, smooth Al x Ga l _ x As surface of contact layer 17.
These RCLEDs were electrically biased using a fine probe, and the electroluminescence spectra were analyzed by a SPEX 1702/04 Spe~;llu~lle~r and aphotomultiplier. Current-voltage characteristics were cherl~d routinely with a Sony/Tektronix 370 Pro~ able Curce Tracer. The threshold voltage of the 30 RCLED is close to the energy band gap of GaAs gain medium, which is 1.4eV at room temperature. Above the threshold voltage, the current m~int~in~ a linear relation with the forward bias, in-lir~ting that the nonalloyed Ag contact is ohmic.
All the mea~ur~"lel1ts are done at room lelll~,alul~, and no special cooling techniques are employed.
%~&~
In a specific example, dot electrode 38 of silver (Ag) is formed on top of contact layer 17 in a thicl~ness from about 15 to 50 nm, preferably 35 nm, underconditions leading to a non-alloyed ohmic cont~rt In this thir~n~ss range silver dot 38 is semi-transparent to light emission of the RCLED and has reflectivities ranging S from 60 percent to 95 percent enabling its use simlllt~neously as a mirror and as a top electrode of the RCLED.
The current-voltage (I-V) characteristic of the RCLED structure is shown in Fig. 4 for a 30 llm rli~m~ter 50 nm thick Ag contact. The I-V characteristic exhibits a "turn-on" voltage of 1.4V and a high dirrelential conductivity (dUdV)10 indicating a low series resistance of the structure. The RCLED voltage does not exceed 2.0V.
The optical power versus injection current characteristic of the RCLED
with Ag mirror/electrode measured at room lem~lature is shown in Fig. 5. The light output power was measured with an ANDO AQ1125 optical power meter. The 15 optical output power depends linearly on the injection current. The linear dependence is expected for the spontaneous emi~sion regime and also in-lir~tes the absence of super-lllminescence and stim~ te(l emi~si~n Non-linear emission spectra can also arise from saturable absorbers in the cavity. The absence of light vs.
current nonlinearities, i.e. reabsorption processes, inclic~tes the high quality of the 20 epitaxial growth.
The linewidths of the RCLED emission spectra are much narrower than the emission spectra of conventional LEDs. As stated above, the usual spontaneous linewidth of conventional LED is approximately 1.8 kT which corresponds to ~ - 28 nm for ~ = 870nm at room lelllpel~tul~i. The spontaneous 25 electroluminescence emission spectrum of the RCLED is shown in Fig. 6. The emission peaks at ~ = 862 nm and has a full-width at half-maximum of 17 meV
(~ = 10.5 nm). The experimentally measured linewidths for this RCLED are much narrower than linewidths expected for spontaneously emitting conventional LEDs which have typical linewidths of 1.8 kT = 45 meV at room t~lllpel~lul~.
30 Even broader linewidths (e.g. 50-90 meV) may be expected for conventional GaInPAs LEDs spontaneously emitting at 1.3 ~m.
FIG. 7 is a schematic le~l~sel tation of a third exemplary embodiment of an RCLED, 70, according to this invention. In this Figure elem~nt~ 11 through 17are the same as in the first and second exemplary embodiments. An annular metal 35 electrode 78, preferably of Ag, overlies a central portion of contact layer 17 forming a non-alloyed ohmic contact with contact layer 17. Electrode 78 ranges from 50 nm ;~3 to 300 nm in thickness and has an outer rli~mt-tPr within a range of from 10 ~m to 100 ~m and an inner diameter within a range of from 5 llm to 50 ,um forming a window in which is exposed the top surface of contact layer 17. Altern~ting layers of GaP and borosilicate glass (BSG) or of ZnS and CaF2, each AJ4n thick, form a top 5 mirror 79 with from two to twenty periods. The mirror contacts the upper surface of contact layer 17 exposed in the window and overlaps a (5 to 50 llm wide) annularstrip of the metal electrode adjacent to the window. The stack of the layers begins with CaF2 or BSG in contact with the contact layer and the electrode. A capping layer of CaF2 or BSG, respectively, completes the stack. Current-voltage (I-V) lO characteristics, optical power versus injection current characteristics, and the emission linewidths of this embodiment of the RCLED are expected to be comparable to those depicted for the RCLED of the second exemplary embodiment.
FIG. 8 is a schematic representation of a fourth exemplary emboclim~nt of an RCLED according to this invention. In this Figure, elements 11 through 17 are 15 the same as those in the preceding exemplary emb~;.~-~n~. Contact layer 17 isoverlaid by a dielectric layer,81, having a centrally located window,82. The dielectric layer, such as SiO2,Si3N4, borosilica~e glass (e.g. Vycor~) is from 0.01 to 0.1 llm thick. A thin metal barrier layer, 83, is deposited on top of dielectric layer 81 and on that portion of contact layer 17 which is exposed in window 82. A
20 layer, 84, of transparent, conductive semiconductor is deposited on top of barrier layer 83. The semiconductor, selected from Cd2_,~Sn,~04 with x ranging from 0.01to 0.5 and In2_ySnyO3 with y ranging from 0.1 to 0.2, acts ~imlllt~nçously as the top electrode and the top mirror of the RCLED. These semiconductor materials, when deposited in a thickness ranging from 50 nm to 500 nm, preferably from 200 to 25 300 nm, exhibit transmitivity greater than 80 percent and absorption <10 percent. In a specific example, barrier metal layer 83 is of Ag and is from 5 to 50 nm, preferably from 5 to 20 nm, in thickness. Barrier metal layer 83 establishes a non-alloyed ohmic contact with contact layer and prevents formation of an additional p-n junction between the contact layer and the conductive semicon(luctor. Current-30 voltage (I-V) characteristics, optical power versus injection current characteri~tic and the emission linewidths of this RCLED are e~pecte~l to be cc,lllpaldble to thosedepicted for the RCLED of the second exemplary embc~im~nt In each of the above embodiments, the active layer may be reduced to a narrow central region from S ~lm to 50 ~m in ~i~meter. The reduction may be 35 achieved by ion implanting the peripheral section of active layer 15 by ions which are inert with respect to the semiconductor material, such as H+or 0+ in 2~3 concentration of from 1 x 1018 to Sx 10l9 per cm3. Alternatively, after semicon~ ctor layers are deposited, the peripheral area of at least layers 15-17 is etched away and a suitable semiconductor is regrown in place of the removed m~teri~l Rec~n~e of this both the spontaneous l~lminescenre and the current are further conrii~eti to a narrow 5 centrally located region.
The RCLED is structurally related to vertical cavity surface emining lasers with semitransparent/se.~ nective top CO~ . However, the two device structures serve different purposes and have dirrt,~;l t design characteristics. For exarnple, reflectivities of both mirrors equal to or e~ree~ling 99 percent are essenti~l 10 for low threshold operation of the lasers. For the RCLED, only the bottom mirror reflectivity needs to be equal to or exceeding 99 percent, while lower reflectivities, of from 25 to 99 percent, are required of the top mirror, i.e. the requilell~nts for the two mirrors are different for the RCLED. In the RCLED the emission from the active region is a truly spontaneous emission. The use of a resonant cavity improves 15 (narrows) the linewidth and spectral purity of the emi~sion~ without prolllo~1g the stimulated lasing emission.
~ dclition~l advantages and m~xlifir~tion~ will readily occur to those skilled in the art. Th~ folc, the invention in its broader aspects is not limited to the specific details, representative devices, and illustrated examples shown and 20 described. Accordingly, various mo lifir~tions may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
Summary of the Invention In accordance with one aspect of the invention there is provided use of a 5 semiconductor structure, said semiconductor structure comprising a plurality of layers of semiconductor material and a bottom and a top electrode on opposite surfaces of said structure, wherein said semiconductor material is selected from Group III-V and Group II-VI compound semiconductor materials, and wherein said structure comprises in an ascending order: a substrate of a first conductivity type, a bottom confining layer 10 of the first conductivity type, an active layer, a top confining layer of a second conductivity type, said top and bottom confining layers and the active layer forming an optical cavity, and a semiconductor contact layer of the second conductivity type, said top electrode being in contact with an upper surface of the said contact layer forming an ohmic contact with the contact layer, and a bottom mirror and a top mirror 15 placed on opposite sides of said optical cavity and forming a Fabry-Perot resonant cavity, said bottom mirror having a reflectivity, RH~ greater than or equal to 99% and being located between the bottom confining layer and the substrate, and said topmirror having a reflectivity, RT, in the range 25% < RT < 99% and being located near the top confining layer, said structure is used as a light emitting diode (LED) in which 20 said active layer spontaneous light emission takes place under forward bias conditions, and the reflectivity, RT~ of the top mirror is selected to enhance anisotropic tr~n~mis~ion of the spontaneous emission directionally through the top mirror.
In a preferred embodiment the active layer is GaAs, the low refractive index material comprises AlAs and the high refractive material is selected from GaAs, 25 Alo 05GaO 95As and Alo l4GaO 86As.
More specifically, this invention embodies a LED with improved light emitting characteristics. The optical cavity of the LED is near the top electrode and the light emission takes place through a central portion of the top surface of the LED
which is opposite to the substrate side of the device. The optical cavity of the LED, 30 which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (RB 2 0.99) and a mirror with a 2 q - 3a-low to moderate reflectivity (RT - 0.25 - 0.99). The DBR mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective mirror (top) above the active region leads to an unexpected improvement in directional light emission characteristics. The 5 use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in 10 terms of a more directed (anisotropic) emission.
Brief Description of the Drawin~s FIG. 1 is a schematic representation of a RCLED according to one exemplary embodiment, including a bottom DBR mirror adjacent the substrate and asemiconductor-air interface top mirror forming a Fabry-Perot resonant optical cavity 15 with an optical cavity of the LED;
FIG. 2 is a plot of light emission intensity versus applied current, the upper curve being for a RCLED of FIG. 1 and the lower curve being for a conventional LED
of similar general construction but without the DBR mirror;
FIG. 3 is a schematic representation of a RCLED according to another 20 exemplary embodiment, including a bottom DBR mirror and a top mirror with lower reflectivity which form a Fabry-Perot resonant optical cavity with an optical cavity of the LED;
~ ,.IC ' FIG. 4 is a plot of current-voltage characteristic of the RCLED
represented in FIG. 3;
FIG. 5 is a plot of an optical output power versus injection current at room ~ pe~dture of an RCLED repl~senled in FIG. 3; and FIG. 6 is a plot of an electrolllminescence ~ ,um at room temperature of the RCLED represented in FIG. 3; the spontaneous lllminescence linewidth is narrower than thermal energy, kT, at room le~ c;
FIG. 7 is a schem~tic l~pl~ise...t~tion of an RCLED according to still another exemplary embo liment, depicting still another version of the top rnirror, FIG. 8 is a schem~tic re~l~sentalion of an RCLED according to yet further exemplary embo liment, depicting a further version of the top mirror.
Detailed Description This invention embodies a new concept of an LED, hereinafter referred to as a Resonant Cavity LED or simply RCLED. In this RCLED a s~ontaneously 15 electroluminescent optical cavity of the LED is placed within a reson~nt Fabry-Perot cavity. The optical cavity includes at least one confining layer, but typically includes a top and a bottom confining layers and an active layer or region sandwiched between the two. The optical cavity is placed between two mirrors of the Fabry-Perot cavity such that the optical cavity is within a reson~nt Fabry-Perot 20 cavity defined by a low absorbent and highly reflective distributed Bragg reflector (DBR) bottom mirror (RB - 0.99) and a top mirror of low to moderate reflectivity(RT - 0.25- 0.99, preferably 0.50 to 0.99). The bottom DBR mi~or is placed between the substrate and the optical cavity, while the top mirror is above the top confining layer. Thé length (L) of the optical cavity is relatively small. The optical 25 cavity length (L) is a low integer multiple of ~ /2, so that L = N~/2 wherein N is a low integer, from 1 to 5, and ~ is the wavelength of the spontaneous emission of the active layer. The optical plv~.lies of this RCLED are superior to the conventional type LEDs. This structure also permits production of the RCLEDs by planar technology so that the fabrication process complexity is only moderately increased 30 relative to conventional LEDs. The structure of the improved RCLED may be based on III-V or II-VI compound semiconductors, with III-V semiconductors including GaAs, AlAs, AlGaAs, GaInAs, InP, AlInP, GaInPAs" AlGaInAs, AlGaInPAs and their alloys.
The placement of the active electroluminescent region within the 35 Fabry-Perot resonant cavity results in several clear advantages of the RCLED over conventional LEDs, some of which are outlined hereinbelow.
Firstly, enh~nred spon~1eous emi~sicn in RCLEDs results from the placement of the optical cavity into the reson~nt Fabry-Perot cavity. The probability for spontaneous emission is pl~polLional to the optical matrix elern~-nt of the initial and final electron state and plupol~ional to the optical mode density. The carrier 5 lifetime change is due to the strongly varying optical mode density in a Fabry-Perot cavity. The optical mode density in a Fabry-Perot resonator is strongly enh~nced for on-resonance wavelengths. While off-resonance optical tr~n~ition~ have a longer lifetime, on-resonance transitions have a shorter liretillle. Spontaneous emission of the RCLED is therefore "channeled" into the optical resonance modes of the cavity.
10 As a consequence, on-resonance transitions of the RCLEDs are enh~nced Secondly, emission of light through the top contact side of the RCLED
device is enhanced due to the highly reflective mirror ~ljacent to the bottom confinement layer. Light emission in conventional LEDs is typically close to isotropic and typically takes place through the substrate. In the RCLED structure, 15 however, emission through the substrate is blocked by a bottom DBR mirror which has a much higher reflectivity than the top reflector mirror, i.e. RB >> RT. As a consequence, light propagating along the optical axis of the cavity exits the cavity predominantly through the top mirror. The anisotropic emi~sion spectrum of the RCLED can enhance the emission through the top side by a factor of two.
Thirdly, the improved spectral purity of the RCLED makes the device well suited for optical fiber communic~ion purposes. Conventional LEDs have spectral linewidths determined by the density of states in the conduction and valence band and the therrnal energy of carriers or typical linewidths on the order of 1.8 kT, where kT is the thermal energy. A far better spectral purity can be achieved with the 25 RCLED. The emission linewidth is a function of the finesse of the cavity. Thus, the linewidth is not a fixed p~lleter but can be designed by means of the cavity characteristics. In silica optical fibre appli~tion~ the spectral purity is of prime importance and can be achieved by a high finesse cavity design. Since the spontaneous emission from the active region is constrained to emit into the modes of 30 the optical cavity, the finesse of the cavity allows one to estim~te the linewidth of the RCLED. The finesse of a coplanar Fabry-Perot cavity is given by:
F = ~ = 2Jr ~ ln~¦RBRT )~
where Lc is the optical cavity length, ~v and v are bandwidth and separation of the Fabry-Perot resonance modes and RB and RT are the reflectivities of the bottom and ~3~
the top mirrors, respectively. In this equation absorption losses are ne~lecte l For example, LC = ~, hv = 1.42 eV, and RBRT = 0.9, yields a finesse of F _ 120.
The corresponding linewidth is h~v _ 12 meV which is much n~,o..~r than kT at room ~~ ature. Due to the inherently high spectral purity of the RCLED, the 5 device is expected to have less chromadc dispersion if used for optical tr~n~mi~sion in silica fibres.
For illustration purposes, the present invention will be described with reference to devices based on AlxGa~ As/GaAs material system with x ranging from 0 to 1. For the same purposes, el~m~nts of the various emb(Yl;...~nl~ of the 10 RCLED are not drawn to scale.
FIG. 1 is a general schematic f~present~tion of one exemplary embodiment of an RCLED according to this invention. RCLED of this embodiment, denomin~ted generally as 10, comprises a bottom electrode 11, a substrate 12, a quarter-wave stack of a plurality of pairs of semiconduct( r layers forming a bottom 15 DBR mirror, 13, one layer of each pair having a refractive index dirrel~ t from the refractive index of another layer of the pair, a bottom confining layer, 14; an active layer or region, 15; a top confining layer, 16; a h,ighly-doped contact layer, 17, and a top electrode, 18, having a centrally located a~l~ 19. In this exemplary embodiment the top mirror of ,the Fabry.Perot cavity is formed by an interface 20 between contact layer 17 and air within apell~, 19. Such a mirror has a reflectivity of the order of 0.25 to 0.35. The light emission takes place through the apelLul~.
While not shown, additional confining and buffer layers may be included into thestructure.
Construction of RCLED lO,i~ accordance with the invention, may be 25 described as being generally as follows:
Metal electrode 11 from 1 to lO~m thick is formed on the bottom surface of substrate 11 to provide for current flow perpen-lirul~rly through the active region to cause spontaneous emission. Typically, bottom electrode 11 is formed after the device is assembled. The RCLED may be mounted with bottom electrode 30 l l in contact with a heat-sink plate, e.g. of copper or some other heat-conductive material which does not cont~min~te the materials of the device.
Substrate 12 is a heavily doped n+-type(or p-type) III-V or II-VI
semiconductor, such as GaAs or AlGaAs. Typically, the thi~ness of the substrate ranges from 100 to 500 ~lm and the doping concentration of the substrate ranges 35 from lx10l7 to lxlOl9cm~3. In some applications, such as optical-electronic integrated circuitry, substrate 12 may be first grown on a master substrate of silicon, which is in common to a number of devices grown on the master substrate.
Quarterwave stack 13 is composed of a plurality of pairs (or periods) of semiconductor layers forming a multilayer bottom DBR mirror with a nu~llb~,r of pairs typically ranging from 10 to 40. One sçmiron(lllctor layer in each pair has a 5 higher index of refraction than the other semicon~lctor layer of the pair. Thethickn~ss of each semiconductor in the pair equals ~4n, wherein ~ is the opticalspontaneous emission wavelength of the active region of the LED and n is the refractive index of the semiconductor material. For a device with an active region spontaneously emitting at ~=0. 8711m, such as GaAs, a 4ua~ l ~ave stack of pairs of 10 such semiconductors as GaAs and AlAs with refractive indices of 3.64 and 2.97, respectively, will consist of 62 nm thick GaAs layer and 73 nm thick AlAs layer while a stack of AlAs and Alo 05 GaO 95 As will consist of pairs of layers 73 nm and 60 nm thick each, respectively. It is important that the m~teri~ of the bottom mirror are so selected that the total reflective index, R, of the mirror is high, such as 15 RB _ 0.99, while absorbence of luminescent emission by the multilayer mirror structure is minim;~l Bottom confining layer 14 and top confining layer 16 are provided to confine active region 15 and to adjust the length (L) of the optical cavity formed by the active region and the confining layers. (These confining layers may also be 20 referred to as cladding or phase-m~tching layers.) The optical cavity length (L) of the RCLED should be an integer multiple of ~/2 so that L = N~/2, with N being a low integer, such as from 1 to 5, and ~ being an optical wavelength of the spontaneous emission of the active layer. Typically, the thickness of each confining layer ranges from 0 to 3 ~lm. To obtain constructive illtt.r~.~nce, the thickness of 25 the confining layers should be a multiple of ~/2 or ~/4 (a~s~-ming a phase change of 0~ and 7~). In the exemplary embodiment the confining regions are of Al ,c Ga ~ As, with x ranging from 0.1 to 0.4.
Active region 15 is a region in which spontaneous light emission takes place under proper bias. In the exemplary embo~im~nt, the active region is a thin 30 lightly doped (lx10l6 - sx10l7 cm-3) layer of GaAs. The active region may be in a forrn of a single layer or a region confined laterally by confining semicon~ ctor material or by insulating material. The latter may be formed by etching a peripheral region of the active layer so as to form an active region mesa and filling the peripheral region by regrowth. Alternatively, proton ions, such as H+ or O+ may be 35 implanted into the peripheral region of the active layer. The single active layer may be replaced by a single or a multiple quantum well (QW) structure composed of a 2~ 2~
narrow gap semiconductor about 1 to 30 nm thick, co~.r.~-eA by wide-gap semiconductQr. Alternatively, the single layer forming the active region may be replaced by a superlattice structure which is a mulliqu~nlun~ well structure with very thin barriers. The active region (QW, MQW or bulk semieonduct~?r) is preferably 5 placed at the ~ntinode position of the optical int~,naily within the cavity.
Highly doped contact layer 17 is provided in thirl~ness of from 0.01 to 0.1 llm to f~cilit~te establishing a non-alloyed ohmic contact bel-.~n the top confining layer 16 and the top electrode 18. Typically, the doping concentration in the contact layer 16 ranges from lx10l9 to lxl020cm~3.
Electrode 18 is a non-alloyed ohmic contact select~ from various electrode metals and alloys used for this purpose in the art, inclu-ling Au-Zn and Au-Be. Such contacts are deposited by ev~pol~ion at te~ tures ranging from 100 to 500~C, preferably from 100 to 250~C. Higher lcm~l~lu~s could result in undesirable alloying of the metal into the semiconductor leading to a rough interfaee 15 morphology. Aperture 19, from 20 ~m to 150 ~lm in diameter, may be defined by a resist formed prior to the deposition of electrode 18 or by standard photolithographic techniques after electrode 18 is formed.
Semiconductor layers 12 through 17 are grown upon substrate 11 by such known methods as metal organic vapor phase epitaxy (MOVPE), metal organic 20 chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (VPE). Preferably, the RCLED structures are grown by Molecular Beam Epitaxy (MBE) technology in a Ribier 2300 MBE system on heavily doped substrates 11. After layers 12 through 17 are grown, the partiallyformed structure is transferred to a separate high vacuum chamber where a metal 25 layer is deposited on the surface of contact layer 17 as a non-alloyed ohmic contact in a desired thit~knçss forming the top electrode of the structure. Bottom electrode 11, e.g., of In, may then be formed on the bottom surface of substrate 12.
Finally, the bottom side of the RCLED may be mounted via the bottom electrode orby means of an electrically and therm~lly conductive adhesive, such as epoxy or 30 silver solder or indium solder on a slab of a metal, such as Cu, Au, Be, which serves as a heat sink in common to other devices.
In a specific example of the first exemplary embofliment, the RCLED is an AIxGal_"As/GaAs system structure comprising in an ~cending sequence 1 to 2,um thick In electrode 11, about 50011m thick (001) oriented heavily doped 35 (2xlOI8cm~3) n+-GaAs substrate 12, bottom milTor 13 con~i~ting of a quarter-wave stack of 30 pairs of n+-type (sx10~7 - SX1018 cm-3) semicon-luctor layers 2~
forming the DBR mirror structure, each pair of the stack consisting of a 73 nm thick layer of n+-AlAs and 60 nm thick layer of Al0.l4GaO.86As. The reflectivity spectrum of the DBR structure (bottom mirror 13), as l~as~d with a Perkin-Elmer Lambda 9 UV/VIS/NIR Spec~uphoto,~ er, showed a broad high reflectivity band S centered at -0.87~1m with a reflectivity > 99 percent. The bottom mirror is followed by bottom confinemPnt layer 14 of n+-Al0.20GaO.80As (SxlOl7cm~3) about 140nm thick, lightly doped (SxlOl6cm~3) active layer 15 of p~-GaAs about 10 nm thick, and top confinem~-nt layer 16 of p+-Al0.30GaO70As (SxlOl6cm~3) about 80 nm thick. A thin heavily Be doped (5 xlOl9cm~3) contact layer 17 of lO p+ -AlO I4GaO 86AS~ about 0.0625 ~m thick, is deposited on the top confinement layer to facilitate ohmic contacting. Top electrode 18, selected from such metalalloys as Au-Zn and Au-Be, is then deposited in a sep~ate high vacuum chamber ina thickness of from 50 nm to 300 nm. Thel~af~r, a 20 ~m in ~ m~ter a~.Lule 19 isformed in electrode 18 by etching. ~ltern~tively, a~~ e 19 may be defined by a 15 resist prior to the deposition of the top electrode.
Operation of the RCLED according to the first exemplary embodiment, leads to an increase in the quality of light intensity as colllpalcd to an LED of similar construction but without the DBR mirror. These differences are represented in FIG. 2 wherein the upper line represents the R~ FD according to this invention and 20 the lower line represents the convention~l LED.
Additional exemplary embodiments of the RCLED structures were formed with different top mirrors. In each of these, most of the structure is similar to that of the first emb~liml-nt, except for the top mirror and top electrode. Wherever applicable, the same numerals are used in dirrel~l~t exemplary embodiments to 25 designate the same elements of the device as in the first exemplary embodiment. In each of the additional exemplary embodiments, the resonant cavity consists of bottom DBR mirror 13, bottom confinement layer 14, active region 15, top confinement layer 16, contact layer 17 and a top mirror-electrode. As a specificexample of the materials the resonant cavity is formed by n-type 30 AlAs/Al0 l4GaO86As bottom DBR mirror 13, n-type Al030GaO~7oAs bottom confinement layer 14, GaAs active region 15, p-type Al0 30GaO~70As top confinement layer 16, a heavily Be doped p+-type Alo l4GaO 86As contact layer 17and a top mirror-electrode. The materials of the top mirror-electrode will be discussed with reference to each separate exemplary embodiment.
2~
FIG. 3 is a schematic represen~tinn of a second exemplary embodiment of an RCLED, 30, according to the invention. In this Figure, a thin Ag, Al or Au dot electrode is being used as top electrode 38 which serves ~imllltan-oously as theelectrode and as the top mirror of the R(~ FD.
S Silver is chosen as the pr~irtll~d metallic IlPil,ol/electrode because of its good conductivity and high reflectivity at wavelen~ths around 0.87~m, which corresponds to the energy band gap of the active m~terial GaAs. ~ tiQn~l currentguiding (e.g. mesa-etch or proton implantation) is not required in the structure due to an occurrence of only small amount of current spreading. The Ag contact has 10 excellent ohmic characteristics. The thin Ag film has reflectivities ranging from approximately 40 percent to 97 percent for thicknesses ranging from about 5 nm to 60 nm, as determined by an Anritsu MS900lB optical spectrum analyzer and an incandescent "white" tungsten light source, with higher reflectivides being for thicker layers and lower reflectivities being for thinner Ag layers. The reflectivity 15 characteristics of these mirrors may be adjusted as needed by adjusting the thi~l~ness of the Ag layer.
Tran~mi~sion Electron Microscopy (TEM) study of the RCLED
structures grown in a Ribier 2300 MBE system disclosed the uniro~ y of the GaAs active region and the interface sharpness of the bottom mirror ~lluclul~,. X-ray 0/2~
20 scans of Ag layers grown in a sepal~lc high vacuum chamher with various thicknesses up to 200 nm deposited at 120~C, showed that the Ag films are polycrystalline. Standard photolithographic techniques were employed to define circular Ag dots 38 with diallle~tl~ ranging from 5 to 100 micro~ t~l~. An etchant of 3HNO3:4H2O was used to etch away unwanted Ag regions, which leaves a 25 clean, smooth Al x Ga l _ x As surface of contact layer 17.
These RCLEDs were electrically biased using a fine probe, and the electroluminescence spectra were analyzed by a SPEX 1702/04 Spe~;llu~lle~r and aphotomultiplier. Current-voltage characteristics were cherl~d routinely with a Sony/Tektronix 370 Pro~ able Curce Tracer. The threshold voltage of the 30 RCLED is close to the energy band gap of GaAs gain medium, which is 1.4eV at room temperature. Above the threshold voltage, the current m~int~in~ a linear relation with the forward bias, in-lir~ting that the nonalloyed Ag contact is ohmic.
All the mea~ur~"lel1ts are done at room lelll~,alul~, and no special cooling techniques are employed.
%~&~
In a specific example, dot electrode 38 of silver (Ag) is formed on top of contact layer 17 in a thicl~ness from about 15 to 50 nm, preferably 35 nm, underconditions leading to a non-alloyed ohmic cont~rt In this thir~n~ss range silver dot 38 is semi-transparent to light emission of the RCLED and has reflectivities ranging S from 60 percent to 95 percent enabling its use simlllt~neously as a mirror and as a top electrode of the RCLED.
The current-voltage (I-V) characteristic of the RCLED structure is shown in Fig. 4 for a 30 llm rli~m~ter 50 nm thick Ag contact. The I-V characteristic exhibits a "turn-on" voltage of 1.4V and a high dirrelential conductivity (dUdV)10 indicating a low series resistance of the structure. The RCLED voltage does not exceed 2.0V.
The optical power versus injection current characteristic of the RCLED
with Ag mirror/electrode measured at room lem~lature is shown in Fig. 5. The light output power was measured with an ANDO AQ1125 optical power meter. The 15 optical output power depends linearly on the injection current. The linear dependence is expected for the spontaneous emi~sion regime and also in-lir~tes the absence of super-lllminescence and stim~ te(l emi~si~n Non-linear emission spectra can also arise from saturable absorbers in the cavity. The absence of light vs.
current nonlinearities, i.e. reabsorption processes, inclic~tes the high quality of the 20 epitaxial growth.
The linewidths of the RCLED emission spectra are much narrower than the emission spectra of conventional LEDs. As stated above, the usual spontaneous linewidth of conventional LED is approximately 1.8 kT which corresponds to ~ - 28 nm for ~ = 870nm at room lelllpel~tul~i. The spontaneous 25 electroluminescence emission spectrum of the RCLED is shown in Fig. 6. The emission peaks at ~ = 862 nm and has a full-width at half-maximum of 17 meV
(~ = 10.5 nm). The experimentally measured linewidths for this RCLED are much narrower than linewidths expected for spontaneously emitting conventional LEDs which have typical linewidths of 1.8 kT = 45 meV at room t~lllpel~lul~.
30 Even broader linewidths (e.g. 50-90 meV) may be expected for conventional GaInPAs LEDs spontaneously emitting at 1.3 ~m.
FIG. 7 is a schematic le~l~sel tation of a third exemplary embodiment of an RCLED, 70, according to this invention. In this Figure elem~nt~ 11 through 17are the same as in the first and second exemplary embodiments. An annular metal 35 electrode 78, preferably of Ag, overlies a central portion of contact layer 17 forming a non-alloyed ohmic contact with contact layer 17. Electrode 78 ranges from 50 nm ;~3 to 300 nm in thickness and has an outer rli~mt-tPr within a range of from 10 ~m to 100 ~m and an inner diameter within a range of from 5 llm to 50 ,um forming a window in which is exposed the top surface of contact layer 17. Altern~ting layers of GaP and borosilicate glass (BSG) or of ZnS and CaF2, each AJ4n thick, form a top 5 mirror 79 with from two to twenty periods. The mirror contacts the upper surface of contact layer 17 exposed in the window and overlaps a (5 to 50 llm wide) annularstrip of the metal electrode adjacent to the window. The stack of the layers begins with CaF2 or BSG in contact with the contact layer and the electrode. A capping layer of CaF2 or BSG, respectively, completes the stack. Current-voltage (I-V) lO characteristics, optical power versus injection current characteristics, and the emission linewidths of this embodiment of the RCLED are expected to be comparable to those depicted for the RCLED of the second exemplary embodiment.
FIG. 8 is a schematic representation of a fourth exemplary emboclim~nt of an RCLED according to this invention. In this Figure, elements 11 through 17 are 15 the same as those in the preceding exemplary emb~;.~-~n~. Contact layer 17 isoverlaid by a dielectric layer,81, having a centrally located window,82. The dielectric layer, such as SiO2,Si3N4, borosilica~e glass (e.g. Vycor~) is from 0.01 to 0.1 llm thick. A thin metal barrier layer, 83, is deposited on top of dielectric layer 81 and on that portion of contact layer 17 which is exposed in window 82. A
20 layer, 84, of transparent, conductive semiconductor is deposited on top of barrier layer 83. The semiconductor, selected from Cd2_,~Sn,~04 with x ranging from 0.01to 0.5 and In2_ySnyO3 with y ranging from 0.1 to 0.2, acts ~imlllt~nçously as the top electrode and the top mirror of the RCLED. These semiconductor materials, when deposited in a thickness ranging from 50 nm to 500 nm, preferably from 200 to 25 300 nm, exhibit transmitivity greater than 80 percent and absorption <10 percent. In a specific example, barrier metal layer 83 is of Ag and is from 5 to 50 nm, preferably from 5 to 20 nm, in thickness. Barrier metal layer 83 establishes a non-alloyed ohmic contact with contact layer and prevents formation of an additional p-n junction between the contact layer and the conductive semicon(luctor. Current-30 voltage (I-V) characteristics, optical power versus injection current characteri~tic and the emission linewidths of this RCLED are e~pecte~l to be cc,lllpaldble to thosedepicted for the RCLED of the second exemplary embc~im~nt In each of the above embodiments, the active layer may be reduced to a narrow central region from S ~lm to 50 ~m in ~i~meter. The reduction may be 35 achieved by ion implanting the peripheral section of active layer 15 by ions which are inert with respect to the semiconductor material, such as H+or 0+ in 2~3 concentration of from 1 x 1018 to Sx 10l9 per cm3. Alternatively, after semicon~ ctor layers are deposited, the peripheral area of at least layers 15-17 is etched away and a suitable semiconductor is regrown in place of the removed m~teri~l Rec~n~e of this both the spontaneous l~lminescenre and the current are further conrii~eti to a narrow 5 centrally located region.
The RCLED is structurally related to vertical cavity surface emining lasers with semitransparent/se.~ nective top CO~ . However, the two device structures serve different purposes and have dirrt,~;l t design characteristics. For exarnple, reflectivities of both mirrors equal to or e~ree~ling 99 percent are essenti~l 10 for low threshold operation of the lasers. For the RCLED, only the bottom mirror reflectivity needs to be equal to or exceeding 99 percent, while lower reflectivities, of from 25 to 99 percent, are required of the top mirror, i.e. the requilell~nts for the two mirrors are different for the RCLED. In the RCLED the emission from the active region is a truly spontaneous emission. The use of a resonant cavity improves 15 (narrows) the linewidth and spectral purity of the emi~sion~ without prolllo~1g the stimulated lasing emission.
~ dclition~l advantages and m~xlifir~tion~ will readily occur to those skilled in the art. Th~ folc, the invention in its broader aspects is not limited to the specific details, representative devices, and illustrated examples shown and 20 described. Accordingly, various mo lifir~tions may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
Claims (14)
1. Use of a semiconductor structure, said semiconductor structure comprising a plurality of layers of semiconductor material and a bottom and a top electrode on opposite surfaces of said structure, wherein said semiconductor material is selected from Group III-V and Group II-VI compound semiconductor materials, and wherein said structure comprises in an ascending order:
a substrate of a first conductivity type, a bottom confining layer of the first conductivity type, an active layer, a top confining layer of a second conductivity type, said top and bottom confining layers and the active layer forming an optical cavity, and a semiconductor contact layer of the second conductivity type, said top electrode being in contact with an upper surface of the said contact layer forming an ohmic contact with the contact layer, and a bottom mirror and a top mirror placed on opposite sides of said optical cavity and forming a Fabry-Perot resonant cavity, said bottom mirror having a reflectivity, RB, greater than or equal to 99%
and being located between the bottom confining layer and the substrate, and said top mirror having a reflectivity, RT, in the range 25% ~ RT ~ 99% and being located near the top confining layer, said structure is used as a light emitting diode (LED) in which said active layer spontaneous light emission takes place under forward bias conditions, and the reflectivity, RT, of the top mirror is selected to enhance anisotropic transmission of the spontaneous emission directionally through the top mirror.
a substrate of a first conductivity type, a bottom confining layer of the first conductivity type, an active layer, a top confining layer of a second conductivity type, said top and bottom confining layers and the active layer forming an optical cavity, and a semiconductor contact layer of the second conductivity type, said top electrode being in contact with an upper surface of the said contact layer forming an ohmic contact with the contact layer, and a bottom mirror and a top mirror placed on opposite sides of said optical cavity and forming a Fabry-Perot resonant cavity, said bottom mirror having a reflectivity, RB, greater than or equal to 99%
and being located between the bottom confining layer and the substrate, and said top mirror having a reflectivity, RT, in the range 25% ~ RT ~ 99% and being located near the top confining layer, said structure is used as a light emitting diode (LED) in which said active layer spontaneous light emission takes place under forward bias conditions, and the reflectivity, RT, of the top mirror is selected to enhance anisotropic transmission of the spontaneous emission directionally through the top mirror.
2. Use of a semiconductor structure as claimed in claim 1, in which said top electrode is provided with a centrally located aperture in which is exposed an upper surface of the contact layer, the interface between said upper surface and air overlaying said upper surface forming said top mirror, the reflectivity, RT, of the top mirror being 25% ~ RT ~ 35%.
3. Use of a semiconductor structure as claimed in claim 2, in which said top electrode is a metal alloy selected from Au-Zn and Au-Be and deposited on the contact layer in a thickness in the range 50 nm to 300 nm.
4. Use of a semiconductor structure as claimed in claim 1, in which said top electrode is a thin metal layer deposited in a thickness permitting passage of light emission through the metal and acting as the top mirror of the resonant cavity.
5. Use of a semiconductor structure as claimed in claim 4, in which said metal layer consists essentially of a metal selected from the group consisting of silver, aluminum and gold.
6. Use of semiconductor structure as claimed in claim 5, in which said metal layer is silver from 15 nm to 50 nm thick.
7. Use of a semiconductor structure as claimed in claim 1, in which said top electrode comprises a thin metal layer overlying the contact layer and an optically transparent conductive semiconductor material overlying said metal layer, the conductive semiconductor material is selected from the group consisting of cadmium tin oxide and indium tin oxide, and said metal layer and said conductive semiconductor layer acting simultaneously as the top electrode and the top mirror of said structure.
8. Use of a semiconductor as claimed in claim 7, in which said metal layer is of silver deposited in a thickness in the range 15 nm to 50 nm, and said transparent conductive semiconductor material is deposited in a thickness in the range 50 nm to 500 nm.
9. Use of semiconductor structure as claimed in claim 1, in which said top electrode comprises an annular thin metal layer overlaying the contact layer, and said top mirror comprises a stack of a plurality of pairs of high index of refraction and low index of refraction layers, said stack overlying that surface of the contact layer which is exposed in the central aperture of the annular metal and partially overlapping an edge of the annular metal layer adjacent said aperture.
10. Use of a semiconductor structure as claimed in claim 9, in which said annular metal is Ag in the range 50 nm to 300 nm in thickness, with an outer diameter in the range 10 µm to 100 µm and an inner diameter in the range 5 µm to 50 µm.
11. Use of a semiconductor structure as claimed in claim 10, in which said stack includes from 2 to 20 pairs of high/low index material selected from GaP/borosilicate and ZnS/CaF2, each layer in the stack being .lambda./4n thick, said stack overlapping a 5 µm to 50 µm wide strip of said top electrode, wherein .lambda. is a spontaneous emission wavelength of the active layer and n is the refractive index of the material of the respective layers.
12. Use of a semiconductor structure as claimed in claim 1, in which said bottom mirror is a multilayer distributed Bragg reflector (DBR) mirror comprising a plurality of pairs of semiconductor layers, one layer in each pair having an index of refraction which is higher than the index of refraction of the other layer in the pair, each layer being .lambda./4n thick, wherein .lambda. is a spontaneous emission wavelength of the active layer and n is the refractive index of the material of the respective layers.
13. Use of a semiconductor structure as claimed in claim 1, in which said structure is an AlxGa1-xAs/GaAs system with x in the range 0 to 1.
14. Use of a semiconductor structure as claimed in claim 3, in which said active layer is GaAs, said low refractive index material comprises AlAs and said high refractive material is selected from GaAs, Al0.05Ga0.95As and Al0.14Ga0.86As.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US815,307 | 1991-12-27 | ||
| US07/815,307 US5226053A (en) | 1991-12-27 | 1991-12-27 | Light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CA2083121A1 CA2083121A1 (en) | 1993-06-28 |
| CA2083121C true CA2083121C (en) | 1997-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002083121A Expired - Fee Related CA2083121C (en) | 1991-12-27 | 1992-11-17 | Light emitting diode |
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| Country | Link |
|---|---|
| US (1) | US5226053A (en) |
| EP (1) | EP0550963B1 (en) |
| JP (1) | JPH05275739A (en) |
| KR (1) | KR100254302B1 (en) |
| CA (1) | CA2083121C (en) |
| DE (1) | DE69214423T2 (en) |
| HK (1) | HK220496A (en) |
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-
1991
- 1991-12-27 US US07/815,307 patent/US5226053A/en not_active Expired - Lifetime
-
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- 1992-11-17 CA CA002083121A patent/CA2083121C/en not_active Expired - Fee Related
- 1992-11-23 DE DE69214423T patent/DE69214423T2/en not_active Expired - Fee Related
- 1992-11-23 EP EP92310667A patent/EP0550963B1/en not_active Expired - Lifetime
- 1992-12-22 JP JP34186192A patent/JPH05275739A/en active Pending
- 1992-12-23 KR KR1019920025257A patent/KR100254302B1/en not_active IP Right Cessation
-
1996
- 1996-12-24 HK HK220496A patent/HK220496A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100254302B1 (en) | 2000-05-01 |
| JPH05275739A (en) | 1993-10-22 |
| DE69214423T2 (en) | 1997-02-20 |
| HK220496A (en) | 1997-01-03 |
| DE69214423D1 (en) | 1996-11-14 |
| EP0550963A1 (en) | 1993-07-14 |
| US5226053A (en) | 1993-07-06 |
| EP0550963B1 (en) | 1996-10-09 |
| KR930015124A (en) | 1993-07-23 |
| CA2083121A1 (en) | 1993-06-28 |
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