CA2103770A1 - Plasma-Enhanced Magnetron-Sputtered Deposition of Materials - Google Patents

Plasma-Enhanced Magnetron-Sputtered Deposition of Materials

Info

Publication number
CA2103770A1
CA2103770A1 CA2103770A CA2103770A CA2103770A1 CA 2103770 A1 CA2103770 A1 CA 2103770A1 CA 2103770 A CA2103770 A CA 2103770A CA 2103770 A CA2103770 A CA 2103770A CA 2103770 A1 CA2103770 A1 CA 2103770A1
Authority
CA
Canada
Prior art keywords
plasma
deposition
metal
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2103770A
Other languages
French (fr)
Other versions
CA2103770C (en
Inventor
Simon K. Nieh
Jesse N. Matossian
Frans G. Krajenbrink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Simon K. Nieh
Jesse N. Matossian
Frans G. Krajenbrink
Hughes Aircraft Company
Hughes Electronics Corporation
He Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simon K. Nieh, Jesse N. Matossian, Frans G. Krajenbrink, Hughes Aircraft Company, Hughes Electronics Corporation, He Holdings, Inc. filed Critical Simon K. Nieh
Publication of CA2103770A1 publication Critical patent/CA2103770A1/en
Application granted granted Critical
Publication of CA2103770C publication Critical patent/CA2103770C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Plasma-enhanced magnetron-sputtered deposition (PMD) of materials is employed for low-temperature deposition of hard, wear-resistant thin films, such as metal nitrides, metal carbides, and metal carbo-nitrides, onto large, three-dimensional, irregularly shaped objects (20) without the requirement for substrate manipulation. The deposition is done by using metal sputter targets (18) as the source of the metal and immersing the metal sputter targets in a plasma (16) that is random in direction and fills the deposition chamber (12) by diffusion. The plasma is generated from at least two gases, the first gas comprising an inert gas, such as argon, and the second gas comprising a nitrogen source, such a nitrogen, and/or a carbon source, such as methane. Simultaneous with the deposition, the substrate is bombarded with ions from the plasma by biasing the substrate negative with respect to the plasma to maintain the substrate temperature and control the film microstructure. The substrate, metal targets, and plasma are all electrically decoupled from each other and from walls (14) of the deposition chamber, so as to provide independent electrical control of each component. The PMD process is applicable not only to the deposition of hard coatings, but also can be applied to any thin film process such as for electrically and thermally conductive coatings and optical coatings, requiring simultaneous, high-flux, ion-bombardment to control film properties.
CA002103770A 1992-08-14 1993-08-10 Plasma-enhanced magnetron-sputtered deposition of materials Expired - Fee Related CA2103770C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/929,986 US5346600A (en) 1992-08-14 1992-08-14 Plasma-enhanced magnetron-sputtered deposition of materials
US929,986 1992-08-14

Publications (2)

Publication Number Publication Date
CA2103770A1 true CA2103770A1 (en) 1994-02-15
CA2103770C CA2103770C (en) 1997-12-16

Family

ID=25458794

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002103770A Expired - Fee Related CA2103770C (en) 1992-08-14 1993-08-10 Plasma-enhanced magnetron-sputtered deposition of materials

Country Status (6)

Country Link
US (1) US5346600A (en)
EP (1) EP0583736B1 (en)
JP (1) JPH0751752B2 (en)
KR (1) KR960002632B1 (en)
CA (1) CA2103770C (en)
DE (1) DE69306690T2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113718219A (en) * 2021-08-30 2021-11-30 长江先进存储产业创新中心有限责任公司 Thin film deposition method and thin film deposition apparatus
CN113755807A (en) * 2021-09-13 2021-12-07 苏州龙盛电子有限公司 Optical filter coating device and coating process

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69310493T2 (en) * 1992-08-14 1997-12-18 Hughes Aircraft Co SURFACE PREPARATION AND COATING METHOD FOR TITANNITRID ON CAST IRON
FR2699164B1 (en) * 1992-12-11 1995-02-24 Saint Gobain Vitrage Int Method for treating thin layers based on metal oxide or nitride.
DE59309954D1 (en) * 1992-12-21 2000-03-16 Balzers Hochvakuum Optical component, method for producing a layer, layer or layer system and use of the component
US5868878A (en) * 1993-08-27 1999-02-09 Hughes Electronics Corporation Heat treatment by plasma electron heating and solid/gas jet cooling
US5476134A (en) * 1993-12-21 1995-12-19 Aluminum Company Of America CRN coated die-casting tools for casting low aluminum iron alloys and method of making same
US5624868A (en) * 1994-04-15 1997-04-29 Micron Technology, Inc. Techniques for improving adhesion of silicon dioxide to titanium
US5869147A (en) * 1994-05-20 1999-02-09 Widia Gmbh Method of making a multilayer tool surface with PCNA interruption of CVD, and tool made by the process
JPH0853116A (en) * 1994-08-11 1996-02-27 Kirin Brewery Co Ltd Plastic container coated with carbon film
DE69604987T2 (en) * 1995-02-16 2000-05-04 Koninkl Philips Electronics Nv DEVICE WITH A SWITCH WITH A CHROME COATING AND METHOD FOR APPLYING CHROME LAYERS BY SPUTTERING
FR2732818B1 (en) * 1995-04-07 1997-06-20 Centre Nat Rech Scient METHOD AND DEVICE FOR CONTROLLING THE POLARIZATION OF A BODY DIP IN A PLASMA
JP3315302B2 (en) * 1995-12-18 2002-08-19 株式会社神戸製鋼所 Vacuum arc deposition method
US5770023A (en) * 1996-02-12 1998-06-23 Eni A Division Of Astec America, Inc. Etch process employing asymmetric bipolar pulsed DC
US6060129A (en) * 1996-03-04 2000-05-09 Polar Materials, Inc. Method for bulk coating using a plasma process
US5733418A (en) * 1996-05-07 1998-03-31 Pld Advanced Automation Systems, Inc. Sputtering method and apparatus
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
BE1010420A3 (en) 1996-07-12 1998-07-07 Cockerill Rech & Dev Method for forming a coating on a substrate and installation for implementing the method.
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
DE19651615C1 (en) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Sputter coating to produce carbon layer for e.g. magnetic heads
US6726812B1 (en) * 1997-03-04 2004-04-27 Canon Kabushiki Kaisha Ion beam sputtering apparatus, method for forming a transparent and electrically conductive film, and process for the production of a semiconductor device
US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
JP4355036B2 (en) * 1997-03-18 2009-10-28 キヤノンアネルバ株式会社 Ionization sputtering equipment
US5925225A (en) * 1997-03-27 1999-07-20 Applied Materials, Inc. Method of producing smooth titanium nitride films having low resistivity
EP0867940A3 (en) 1997-03-27 1999-10-13 Applied Materials, Inc. An underlayer for an aluminum interconnect
US6013980A (en) 1997-05-09 2000-01-11 Advanced Refractory Technologies, Inc. Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings
JPH111770A (en) * 1997-06-06 1999-01-06 Anelva Corp Sputtering apparatus and sputtering method
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6051114A (en) * 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US5882399A (en) * 1997-08-23 1999-03-16 Applied Materials, Inc. Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
DE19740793C2 (en) 1997-09-17 2003-03-20 Bosch Gmbh Robert Process for coating surfaces by means of a system with sputter electrodes and use of the process
US6039849A (en) * 1997-10-28 2000-03-21 Motorola, Inc. Method for the manufacture of electronic components
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
DE19809122A1 (en) * 1998-03-04 1999-09-09 Daimler Chrysler Ag Coating for components made of gray cast iron or cast iron with spheroidal graphite, in particular, for forming tools, and method for producing such a coating
US6103320A (en) * 1998-03-05 2000-08-15 Shincron Co., Ltd. Method for forming a thin film of a metal compound by vacuum deposition
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6012830A (en) * 1998-06-23 2000-01-11 Valeo Sylvania L.L.C. Light shield for a vehicle headlamp
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6238537B1 (en) * 1998-08-06 2001-05-29 Kaufman & Robinson, Inc. Ion assisted deposition source
EP0992604B1 (en) * 1998-09-28 2008-07-09 Bridgestone Corporation Method for controlling the refractive index of a dry plating film
US6660365B1 (en) * 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6974629B1 (en) 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
US6964731B1 (en) 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
DE19860474A1 (en) * 1998-12-28 2000-07-06 Fraunhofer Ges Forschung Method and device for coating substrates by means of bipolar pulse magnetron sputtering
US6387748B1 (en) 1999-02-16 2002-05-14 Micron Technology, Inc. Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions
GB2349392B (en) 1999-04-20 2003-10-22 Trikon Holdings Ltd A method of depositing a layer
US6620465B2 (en) * 1999-04-23 2003-09-16 General Electric Company Physical properties of thermal barrier coatings using electron beam-physical vapor deposition
EP1198430B1 (en) 1999-05-18 2003-11-05 Cardinal CG Company Hard, scratch-resistant coatings for substrates
KR100345809B1 (en) * 1999-09-14 2002-07-27 주식회사 케이피티 Method for plasma nitriding for extrusion die of aluminum
US6342132B1 (en) 1999-10-29 2002-01-29 International Business Machines Corporation Method of controlling gas density in an ionized physical vapor deposition apparatus
US6551471B1 (en) * 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
US6478933B1 (en) * 1999-12-17 2002-11-12 Caterpillar Inc. Method for creating surface oil reservoirs on coated iron
IL134255A0 (en) * 2000-01-27 2001-04-30 V I P Vacuum Ion Plasma Techno System and method for deposition of coatings on a substrate
TW512181B (en) * 2000-02-03 2002-12-01 Cosmos Vacuum Technology Corp A process for covering a film on the surface of the micro cutting router by coating super micro atomized multi-elements
US6554979B2 (en) 2000-06-05 2003-04-29 Applied Materials, Inc. Method and apparatus for bias deposition in a modulating electric field
JP2002105623A (en) * 2000-09-27 2002-04-10 Kobe Steel Ltd Carbon onion thin film and manufacturing method
US6696360B2 (en) 2001-03-15 2004-02-24 Micron Technology, Inc. Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
US7037862B2 (en) * 2001-06-13 2006-05-02 Micron Technology, Inc. Dielectric layer forming method and devices formed therewith
US6678082B2 (en) 2001-09-12 2004-01-13 Harris Corporation Electro-optical component including a fluorinated poly(phenylene ether ketone) protective coating and related methods
US6746591B2 (en) 2001-10-16 2004-06-08 Applied Materials Inc. ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature
KR20030039649A (en) * 2001-11-14 2003-05-22 조치형 Coating device and method of ball-point pen
FR325790A (en) 2002-03-28 1903-05-08 Kempshall Eleazer Advanced ball for the game of golf
WO2004017356A2 (en) * 2002-08-16 2004-02-26 The Regents Of The University Of California Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
JP2005036250A (en) * 2003-07-16 2005-02-10 Matsushita Electric Ind Co Ltd Sputtering apparatus
US20050202099A1 (en) * 2004-03-10 2005-09-15 Globe Union Industrial Corp. Anti-microbial sanitary ware and method for making the same
US7713632B2 (en) 2004-07-12 2010-05-11 Cardinal Cg Company Low-maintenance coatings
US7790003B2 (en) * 2004-10-12 2010-09-07 Southwest Research Institute Method for magnetron sputter deposition
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US20090214787A1 (en) * 2005-10-18 2009-08-27 Southwest Research Institute Erosion Resistant Coatings
CN101326303B (en) * 2005-10-18 2012-07-18 西南研究院 Erosion resistant coatings
JP4525929B2 (en) * 2006-02-28 2010-08-18 ノーリツ鋼機株式会社 Work processing device
US7989094B2 (en) 2006-04-19 2011-08-02 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US8691064B2 (en) * 2007-07-09 2014-04-08 Raytheon Canada Limited Sputter-enhanced evaporative deposition apparatus and method
EP2066594B1 (en) 2007-09-14 2016-12-07 Cardinal CG Company Low-maintenance coatings, and methods for producing low-maintenance coatings
US8003957B2 (en) * 2008-02-11 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Ethane implantation with a dilution gas
US20090200494A1 (en) * 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
DE102008019202A1 (en) * 2008-04-17 2009-10-22 Kennametal Inc. Coating method, workpiece or tool and its use
CN102046844A (en) * 2008-06-09 2011-05-04 纳峰科技私人有限公司 A method for rapid deposition of a coating on a substrate
TWI421361B (en) * 2009-10-30 2014-01-01 Choung Lii Chao Substrate with microstructures and the manufacturing method thereof
KR101097329B1 (en) * 2010-01-11 2011-12-23 삼성모바일디스플레이주식회사 Sputtering apparatus
US8790791B2 (en) 2010-04-15 2014-07-29 Southwest Research Institute Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings
US9511572B2 (en) 2011-05-25 2016-12-06 Southwest Research Institute Nanocrystalline interlayer coating for increasing service life of thermal barrier coating on high temperature components
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) * 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
RU2662912C2 (en) * 2013-03-15 2018-07-31 Вейпор Текнолоджиз Инк. Low pressure arc plasma immersion coating vapour deposition and ion treatment
DE102013210155A1 (en) 2013-05-31 2014-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for depositing a transparent, electrically conductive metal oxide layer
WO2015066132A1 (en) * 2013-10-30 2015-05-07 Tecport Optics, Inc. Ophthalmic optical filters for prevention and reduction of photophobic effects and responses
CN104109830B (en) * 2014-07-22 2017-01-18 桂林电子科技大学 Surface hafnium-infiltrated austenitic stainless steel resistant to high temperature and preparation method thereof
US9523146B1 (en) 2015-06-17 2016-12-20 Southwest Research Institute Ti—Si—C—N piston ring coatings
EP3541762B1 (en) 2016-11-17 2022-03-02 Cardinal CG Company Static-dissipative coating technology
US11098403B2 (en) * 2017-02-07 2021-08-24 City University Of Hong Kong High entropy alloy thin film coating and method for preparing the same
RU2659537C1 (en) * 2017-09-26 2018-07-02 Татьяна Сергеевна Картапова Method of application of mixed carbon-nitrogen protective coating to increase corrosive stability of iron
FR3123074B1 (en) * 2021-05-19 2023-08-04 Hydromecanique & Frottement Process for depositing dense chromium on a substrate
FR3126428A1 (en) * 2021-08-31 2023-03-03 Hydromecanique Et Frottement Process for depositing carbon on a substrate
CN114656033B (en) * 2022-02-17 2023-03-14 西安建筑科技大学 Preparation method of slow-release carbon source with corncobs as core groups
CN114908324A (en) * 2022-03-23 2022-08-16 广州益华数字科技有限公司 Preparation method of Pt thermal resistance film
CN114774869A (en) * 2022-04-08 2022-07-22 西安热工研究院有限公司 Component-adjustable TixCr1-xNyNano coating, preparation method and application thereof
CN115110048B (en) * 2022-06-20 2023-05-02 肇庆市科润真空设备有限公司 PECVD (plasma enhanced chemical vapor deposition) coating device and method based on magnetron sputtering

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH631743A5 (en) * 1977-06-01 1982-08-31 Balzers Hochvakuum METHOD FOR EVAPORATING MATERIAL IN A VACUUM EVAPORATION SYSTEM.
JPS5983767A (en) * 1982-11-04 1984-05-15 Kawasaki Heavy Ind Ltd Surface treatment of iron or steel
JPS59123768A (en) * 1982-12-28 1984-07-17 Toyota Central Res & Dev Lab Inc Method and device for simultaneous multi-element sputtering
FR2557149B1 (en) * 1983-12-27 1989-11-17 France Etat METHOD AND DEVICE FOR THE DEPOSITION ON A SUPPORT OF A THIN FILM OF A MATERIAL FROM A REACTIVE PLASMA
DE3503397A1 (en) * 1985-02-01 1986-08-07 W.C. Heraeus Gmbh, 6450 Hanau Sputtering plant for the reactive coating of a substrate with hard materials
US4992153A (en) * 1989-04-26 1991-02-12 Balzers Aktiengesellschaft Sputter-CVD process for at least partially coating a workpiece
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
DE3920835C2 (en) * 1989-06-24 1997-12-18 Leybold Ag Device for coating substrates
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
DE4038497C1 (en) * 1990-12-03 1992-02-20 Leybold Ag, 6450 Hanau, De

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CN113718219A (en) * 2021-08-30 2021-11-30 长江先进存储产业创新中心有限责任公司 Thin film deposition method and thin film deposition apparatus
CN113718219B (en) * 2021-08-30 2023-11-14 长江先进存储产业创新中心有限责任公司 Thin film deposition method and thin film deposition apparatus
CN113755807A (en) * 2021-09-13 2021-12-07 苏州龙盛电子有限公司 Optical filter coating device and coating process
CN113755807B (en) * 2021-09-13 2024-02-09 苏州龙盛电子有限公司 Optical filter coating device and coating process

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CA2103770C (en) 1997-12-16
US5346600A (en) 1994-09-13
KR940004075A (en) 1994-03-14
EP0583736A1 (en) 1994-02-23
JPH0751752B2 (en) 1995-06-05
DE69306690T2 (en) 1997-07-24
KR960002632B1 (en) 1996-02-24
JPH06192834A (en) 1994-07-12
EP0583736B1 (en) 1996-12-18

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