CA2106943A1 - Spin-Polarized Electron Emitter Having Semiconductor Opto-Electronic Layer with Split Valence Band - Google Patents

Spin-Polarized Electron Emitter Having Semiconductor Opto-Electronic Layer with Split Valence Band

Info

Publication number
CA2106943A1
CA2106943A1 CA2106943A CA2106943A CA2106943A1 CA 2106943 A1 CA2106943 A1 CA 2106943A1 CA 2106943 A CA2106943 A CA 2106943A CA 2106943 A CA2106943 A CA 2106943A CA 2106943 A1 CA2106943 A1 CA 2106943A1
Authority
CA
Canada
Prior art keywords
electronic layer
opto
emitting surface
spin
valence band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2106943A
Other languages
French (fr)
Other versions
CA2106943C (en
Inventor
Katsumi Kishino
Toshihiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28082292A external-priority patent/JP3154569B2/en
Priority claimed from JP30826092A external-priority patent/JPH06139920A/en
Priority claimed from JP30825992A external-priority patent/JPH06139919A/en
Application filed by Individual filed Critical Individual
Publication of CA2106943A1 publication Critical patent/CA2106943A1/en
Application granted granted Critical
Publication of CA2106943C publication Critical patent/CA2106943C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
    • H01J2203/02—Electron guns
    • H01J2203/0296—Spin-polarised beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06383—Spin polarised electron sources

Abstract

An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.
CA002106943A 1992-09-25 1993-09-24 Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band Expired - Fee Related CA2106943C (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4-280822 1992-09-25
JP28082292A JP3154569B2 (en) 1992-09-25 1992-09-25 Polarized electron beam generator
JP30826092A JPH06139920A (en) 1992-10-22 1992-10-22 Polarized electron beam source
JP4-308259 1992-10-22
JP30825992A JPH06139919A (en) 1992-10-22 1992-10-22 Polarized electron beam generating device
JP4-308260 1992-10-22

Publications (2)

Publication Number Publication Date
CA2106943A1 true CA2106943A1 (en) 1994-03-26
CA2106943C CA2106943C (en) 1999-06-29

Family

ID=27336781

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002106943A Expired - Fee Related CA2106943C (en) 1992-09-25 1993-09-24 Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band

Country Status (4)

Country Link
US (2) US5747862A (en)
EP (1) EP0589475B1 (en)
CA (1) CA2106943C (en)
DE (1) DE69308976T2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747862A (en) * 1992-09-25 1998-05-05 Katsumi Kishino Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror
US5877510A (en) * 1994-05-27 1999-03-02 Nec Corporation Spin polarized electron semiconductor source and apparatus utilizing the same
JP2606131B2 (en) * 1994-05-27 1997-04-30 日本電気株式会社 Semiconductor spin-polarized electron source
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
GB2318228B (en) * 1996-10-09 2000-08-09 Ericsson Telefon Ab L M Trimming circuit
JP3054707B1 (en) * 1999-03-19 2000-06-19 東京大学長 Optical isolator
US6590923B1 (en) 1999-05-13 2003-07-08 The Board Of Regents Of The University Of Nebraska Optically pumped direct extraction electron spin filter system and method of use
US6693933B2 (en) * 2001-03-15 2004-02-17 Honeywell International Inc. Vertical cavity master oscillator power amplifier
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
DE102005016592A1 (en) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh LED chip
DE102007038797A1 (en) * 2007-08-09 2009-02-19 Biametrics Marken Und Rechte Gmbh Investigation of molecular interactions on and / or in thin layers
US8530995B2 (en) 2009-02-03 2013-09-10 Georgia State University Research Foundation, Inc. High operating temperature split-off band infrared detector with double and/or graded barrier
DE102012100095A1 (en) * 2012-01-06 2013-07-11 BIONMED TECHNOLOGIES GmbH Device for charging solid, liquid and/or gaseous object with electron, adjusts primarily counterclockwise together with static magnetic field by polarized light formed by ionization of spinning electron
TWI617805B (en) * 2012-09-14 2018-03-11 Ebara Corp Inspection device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH575173A5 (en) * 1975-01-13 1976-04-30 Lab Fuer Festkoerperphysik Der
US4616241A (en) * 1983-03-22 1986-10-07 The United States Of America As Represented By The United States Department Of Energy Superlattice optical device
DE3441922C2 (en) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Photocathode for the infrared range
DE3676019D1 (en) * 1985-09-03 1991-01-17 Daido Steel Co Ltd EPITACTIC GALLIUM ARSENIDE SEMICONDUCTOR DISC AND METHOD FOR THEIR PRODUCTION.
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
JPH0380573A (en) * 1989-08-23 1991-04-05 Nec Corp Photo detecting element
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
US5132746A (en) * 1991-01-04 1992-07-21 International Business Machines Corporation Biaxial-stress barrier shifts in pseudomorphic tunnel devices
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
EP0512429B1 (en) * 1991-05-02 1995-01-04 Daido Tokushuko Kabushiki Kaisha Semiconductor device for emitting highly spin-polarized electron beam
US5747862A (en) * 1992-09-25 1998-05-05 Katsumi Kishino Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors

Also Published As

Publication number Publication date
US5747862A (en) 1998-05-05
DE69308976D1 (en) 1997-04-24
US6040587A (en) 2000-03-21
CA2106943C (en) 1999-06-29
EP0589475B1 (en) 1997-03-19
EP0589475A1 (en) 1994-03-30
DE69308976T2 (en) 1997-10-23

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