CA2112343A1 - Semiconductor Laser Device - Google Patents

Semiconductor Laser Device

Info

Publication number
CA2112343A1
CA2112343A1 CA2112343A CA2112343A CA2112343A1 CA 2112343 A1 CA2112343 A1 CA 2112343A1 CA 2112343 A CA2112343 A CA 2112343A CA 2112343 A CA2112343 A CA 2112343A CA 2112343 A1 CA2112343 A1 CA 2112343A1
Authority
CA
Canada
Prior art keywords
semiconductor laser
chip
laser chip
laser device
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2112343A
Other languages
French (fr)
Other versions
CA2112343C (en
Inventor
Katsushige Masui
Nobuyuki Miyauchi
Zenpei Tani
Takehiro Shiomoto
Hiroshi Chikugawa
Masaru Ogawa
Makoto Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34297992A external-priority patent/JPH06196817A/en
Priority claimed from JP05104801A external-priority patent/JP3074092B2/en
Priority claimed from JP05125751A external-priority patent/JP3084173B2/en
Priority claimed from JP5138318A external-priority patent/JP3022059B2/en
Application filed by Individual filed Critical Individual
Publication of CA2112343A1 publication Critical patent/CA2112343A1/en
Application granted granted Critical
Publication of CA2112343C publication Critical patent/CA2112343C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin

Abstract

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the semiconductor laser chip. The base may have a monitor photodiode chip mounted thereon in the vicinity of the semiconductor laser chip. The resin layer enclosing the semiconductor laser chipor both of the semiconductor laser chip and the monitor photodiode chip is made of a single synthetic resin having a thickness not greater than 500µm and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the semiconductor laser chip.
CA002112343A 1992-12-24 1993-12-23 Semiconductor laser device Expired - Fee Related CA2112343C (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP4-342979 1992-12-24
JP34297992A JPH06196817A (en) 1992-12-24 1992-12-24 Semiconductor laser device
JP05104801A JP3074092B2 (en) 1993-04-30 1993-04-30 Semiconductor laser device
JP5-104801 1993-04-30
JP5-125751 1993-05-27
JP05125751A JP3084173B2 (en) 1993-05-27 1993-05-27 Semiconductor laser device
JP5138318A JP3022059B2 (en) 1993-06-10 1993-06-10 Semiconductor laser device
JP5-138318 1993-06-10

Publications (2)

Publication Number Publication Date
CA2112343A1 true CA2112343A1 (en) 1994-06-25
CA2112343C CA2112343C (en) 1998-09-15

Family

ID=27469257

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002112343A Expired - Fee Related CA2112343C (en) 1992-12-24 1993-12-23 Semiconductor laser device

Country Status (7)

Country Link
US (1) US5557116A (en)
EP (1) EP0607700B1 (en)
KR (1) KR940017021A (en)
CN (1) CN1065672C (en)
CA (1) CA2112343C (en)
DE (1) DE69326136T2 (en)
TW (1) TW289872B (en)

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ATE479319T1 (en) * 2004-02-12 2010-09-15 Askoll Holding Srl DISCRETE ELECTRONIC COMPONENT AND MOUNTING METHOD THEREOF
US7850374B2 (en) * 2005-01-14 2010-12-14 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical transmitter module with an integrated lens and method for making the module
US7777172B2 (en) * 2007-06-01 2010-08-17 Fairchild Semiconductor Corporation Methods for reducing cross talk in optical sensors
JP5206399B2 (en) * 2008-12-25 2013-06-12 三菱電機株式会社 Laser apparatus and manufacturing method thereof
US8034644B2 (en) * 2009-01-23 2011-10-11 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device
JP2012033733A (en) 2010-07-30 2012-02-16 Sanyo Electric Co Ltd Semiconductor laser device and optical device
DE102010046090A1 (en) * 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Housing for an optoelectronic semiconductor device and semiconductor device
DE102010046088A1 (en) 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Housing and method of manufacturing a housing
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012102305A1 (en) * 2012-03-19 2013-09-19 Osram Opto Semiconductors Gmbh Laser diode device for projection system, has crystalline protective layer made of dielectric material is formed on radiation uncoupling surface of laser diode chip which is provided on mounting element
DE102012103160A1 (en) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh laser diode device
US9300112B2 (en) 2013-12-18 2016-03-29 Lumentum Operations Llc Packaged laser diode and method of packaging a laser diode
JP6202028B2 (en) * 2015-03-24 2017-09-27 トヨタ自動車株式会社 Arrangement structure of surrounding information detection sensor and autonomous driving vehicle
US10144424B2 (en) * 2015-04-09 2018-12-04 Toyota Jidosha Kabushiki Kaisha Arrangement structure for vicinity information detection sensor
CN107154579B (en) * 2017-07-06 2019-04-19 山东浪潮华光光电子股份有限公司 A kind of device and localization method of the positioning of semiconductor laser LD chip package
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US11309680B2 (en) * 2017-09-28 2022-04-19 Nichia Corporation Light source device including lead terminals that cross space defined by base and cap
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Also Published As

Publication number Publication date
EP0607700B1 (en) 1999-08-25
KR940017021A (en) 1994-07-25
TW289872B (en) 1996-11-01
EP0607700A2 (en) 1994-07-27
CN1065672C (en) 2001-05-09
EP0607700A3 (en) 1994-11-30
CA2112343C (en) 1998-09-15
DE69326136D1 (en) 1999-09-30
DE69326136T2 (en) 2000-02-24
US5557116A (en) 1996-09-17
CN1093837A (en) 1994-10-19

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