CA2155121A1 - Micromachined Relay and Method of Forming the Relay - Google Patents
Micromachined Relay and Method of Forming the RelayInfo
- Publication number
- CA2155121A1 CA2155121A1 CA2155121A CA2155121A CA2155121A1 CA 2155121 A1 CA2155121 A1 CA 2155121A1 CA 2155121 A CA2155121 A CA 2155121A CA 2155121 A CA2155121 A CA 2155121A CA 2155121 A1 CA2155121 A1 CA 2155121A1
- Authority
- CA
- Canada
- Prior art keywords
- cavity
- substrate
- contacts
- insulating
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052707 ruthenium Inorganic materials 0.000 abstract 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000005297 pyrex Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0018—Special provisions for avoiding charge trapping, e.g. insulation layer between actuating electrodes being permanently polarised by charge trapping so that actuating or release voltage is altered
Abstract
A bridging member (18) extending across a cavity (16) in a semiconductor substrate (12) (e.g. polycrystalline silicon) has successive layers - a masking layer (20), an electrically conductive layer (22) (e.g. polysilicon) and an insulating layer (24) (eg. SiO2).
A first electrical contact (32) (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging members across the cavity. A pair of bumps (34) (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends.
Initially the bridging member (18) and then the contact (32) and the bumps (34) are formed on the substrate and then the cavity (16) is etched in the substrate through holes in the bridging member. A
pair of second electrical contacts (44) (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (14) (e.g. pyrex glass) adjacent the substrate. The two substrates are bonded after the contacts are cleaned. The first contact (32) is normally separated from the second contacts (44) because the bumps(34) engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member (18) is deflected so that the first contact (33) engages the second contacts (44). Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
A first electrical contact (32) (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging members across the cavity. A pair of bumps (34) (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends.
Initially the bridging member (18) and then the contact (32) and the bumps (34) are formed on the substrate and then the cavity (16) is etched in the substrate through holes in the bridging member. A
pair of second electrical contacts (44) (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (14) (e.g. pyrex glass) adjacent the substrate. The two substrates are bonded after the contacts are cleaned. The first contact (32) is normally separated from the second contacts (44) because the bumps(34) engage the insulating substrate surface. When a voltage is applied between an electrically conductive layer on the insulating substrate surface and the polysilicon layer, the bridging member (18) is deflected so that the first contact (33) engages the second contacts (44). Electrical leads extend on the surface of the insulating substrate from the second contacts to bonding pads disposed adjacent a second cavity in the semiconductor substrate. The resultant relays on a wafer may be separated by sawing the semiconductor and insulating substrates at the position of the second cavity in each relay to expose the pads for electrical connections.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/012,055 US5479042A (en) | 1993-02-01 | 1993-02-01 | Micromachined relay and method of forming the relay |
US08/012,055 | 1993-02-01 | ||
PCT/US1994/001091 WO1994018688A1 (en) | 1993-02-01 | 1994-01-31 | Micromachined relay and method of forming the relay |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2155121A1 true CA2155121A1 (en) | 1994-08-18 |
CA2155121C CA2155121C (en) | 2000-10-17 |
Family
ID=21753163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA 2155121 Expired - Fee Related CA2155121C (en) | 1993-02-01 | 1994-01-31 | Micromachined relay and method of forming the relay |
Country Status (6)
Country | Link |
---|---|
US (3) | US5479042A (en) |
EP (1) | EP0681739B1 (en) |
JP (1) | JPH08509093A (en) |
CA (1) | CA2155121C (en) |
DE (1) | DE69417725T2 (en) |
WO (1) | WO1994018688A1 (en) |
Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5479042A (en) * | 1993-02-01 | 1995-12-26 | Brooktree Corporation | Micromachined relay and method of forming the relay |
US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
DE69628161T2 (en) | 1995-04-05 | 2004-03-25 | Unitive International Ltd. | A SOLDERING STRUCTURE FOR A MICROELECTRONIC SUBSTRATE |
NO952190L (en) * | 1995-06-02 | 1996-12-03 | Lk As | Controllable micro switch |
US5847631A (en) * | 1995-10-10 | 1998-12-08 | Georgia Tech Research Corporation | Magnetic relay system and method capable of microfabrication production |
US6281560B1 (en) | 1995-10-10 | 2001-08-28 | Georgia Tech Research Corp. | Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices |
US6377155B1 (en) | 1995-10-10 | 2002-04-23 | Georgia Tech Research Corp. | Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices |
CN1097276C (en) * | 1995-10-20 | 2002-12-25 | 欧姆龙株式会社 | Relay and matrix relay |
WO1997018574A1 (en) * | 1995-11-14 | 1997-05-22 | Smiths Industries Public Limited Company | Switches and switching systems |
US6025767A (en) * | 1996-08-05 | 2000-02-15 | Mcnc | Encapsulated micro-relay modules and methods of fabricating same |
JP3590872B2 (en) * | 1996-08-27 | 2004-11-17 | オムロン株式会社 | Micro relay |
US6069392A (en) * | 1997-04-11 | 2000-05-30 | California Institute Of Technology | Microbellows actuator |
EP1024512B8 (en) * | 1997-10-21 | 2005-03-23 | Omron Corporation | Electrostatic micro-relay |
US5959338A (en) * | 1997-12-29 | 1999-09-28 | Honeywell Inc. | Micro electro-mechanical systems relay |
US5982608A (en) * | 1998-01-13 | 1999-11-09 | Stmicroelectronics, Inc. | Semiconductor variable capacitor |
US6252229B1 (en) | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
GB9819817D0 (en) * | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
US6645145B1 (en) * | 1998-11-19 | 2003-11-11 | Siemens Medical Solutions Usa, Inc. | Diagnostic medical ultrasound systems and transducers utilizing micro-mechanical components |
US6605043B1 (en) | 1998-11-19 | 2003-08-12 | Acuson Corp. | Diagnostic medical ultrasound systems and transducers utilizing micro-mechanical components |
JP2000188049A (en) * | 1998-12-22 | 2000-07-04 | Nec Corp | Micro machine switch and manufacture thereof |
JP3119255B2 (en) | 1998-12-22 | 2000-12-18 | 日本電気株式会社 | Micromachine switch and method of manufacturing the same |
US6183097B1 (en) | 1999-01-12 | 2001-02-06 | Cornell Research Foundation Inc. | Motion amplification based sensors |
US6410360B1 (en) | 1999-01-26 | 2002-06-25 | Teledyne Industries, Inc. | Laminate-based apparatus and method of fabrication |
US6297069B1 (en) | 1999-01-28 | 2001-10-02 | Honeywell Inc. | Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly |
CN1173398C (en) * | 1999-02-04 | 2004-10-27 | 蒂科电子输给系统股份公司 | Micro-relay |
US6160230A (en) * | 1999-03-01 | 2000-12-12 | Raytheon Company | Method and apparatus for an improved single pole double throw micro-electrical mechanical switch |
US7011869B2 (en) * | 1999-05-26 | 2006-03-14 | Ppg Industries Ohio, Inc. | Multi-stage processes for coating substrates with multi-component composite coating compositions |
DE19929595C1 (en) * | 1999-06-28 | 2001-05-31 | Tyco Electronics Logistics Ag | Switching relay e.g. silicon microrelay, has drive element used for deformation of spring blade fixed at either end to bring attached movable contact into contact with stationary contact |
US6229683B1 (en) | 1999-06-30 | 2001-05-08 | Mcnc | High voltage micromachined electrostatic switch |
US6057520A (en) * | 1999-06-30 | 2000-05-02 | Mcnc | Arc resistant high voltage micromachined electrostatic switch |
US6262463B1 (en) * | 1999-07-08 | 2001-07-17 | Integrated Micromachines, Inc. | Micromachined acceleration activated mechanical switch and electromagnetic sensor |
US6215644B1 (en) | 1999-09-09 | 2001-04-10 | Jds Uniphase Inc. | High frequency tunable capacitors |
US6359374B1 (en) | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
US6496351B2 (en) | 1999-12-15 | 2002-12-17 | Jds Uniphase Inc. | MEMS device members having portions that contact a substrate and associated methods of operating |
US6229684B1 (en) | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
US6373682B1 (en) | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
US7256669B2 (en) * | 2000-04-28 | 2007-08-14 | Northeastern University | Method of preparing electrical contacts used in switches |
WO2002012116A2 (en) * | 2000-08-03 | 2002-02-14 | Analog Devices, Inc. | Bonded wafer optical mems process |
US6485273B1 (en) | 2000-09-01 | 2002-11-26 | Mcnc | Distributed MEMS electrostatic pumping devices |
US6590267B1 (en) | 2000-09-14 | 2003-07-08 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6396620B1 (en) | 2000-10-30 | 2002-05-28 | Mcnc | Electrostatically actuated electromagnetic radiation shutter |
US6587021B1 (en) * | 2000-11-09 | 2003-07-01 | Raytheon Company | Micro-relay contact structure for RF applications |
WO2002039802A2 (en) * | 2000-11-10 | 2002-05-16 | Unitive Electronics, Inc. | Methods of positioning components using liquid prime movers and related structures |
DE10119073A1 (en) * | 2001-04-12 | 2002-12-05 | Schneider Laser Technologies | Resonant scanner has drive formed from stator electrode and coil, for exerting force directly onto drive plate, with periodic function adapted to resonant frequency of mirror |
US6525396B2 (en) * | 2001-04-17 | 2003-02-25 | Texas Instruments Incorporated | Selection of materials and dimensions for a micro-electromechanical switch for use in the RF regime |
US6635837B2 (en) * | 2001-04-26 | 2003-10-21 | Adc Telecommunications, Inc. | MEMS micro-relay with coupled electrostatic and electromagnetic actuation |
US6815739B2 (en) * | 2001-05-18 | 2004-11-09 | Corporation For National Research Initiatives | Radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates |
US6426687B1 (en) * | 2001-05-22 | 2002-07-30 | The Aerospace Corporation | RF MEMS switch |
US6509816B1 (en) * | 2001-07-30 | 2003-01-21 | Glimmerglass Networks, Inc. | Electro ceramic MEMS structure with oversized electrodes |
JP2003062798A (en) * | 2001-08-21 | 2003-03-05 | Advantest Corp | Actuator and switch |
JP4045090B2 (en) * | 2001-11-06 | 2008-02-13 | オムロン株式会社 | Adjustment method of electrostatic actuator |
EP1454349B1 (en) * | 2001-11-09 | 2006-09-27 | WiSpry, Inc. | Trilayered beam mems device and related methods |
JP3709847B2 (en) * | 2002-01-23 | 2005-10-26 | 株式会社村田製作所 | Electrostatic actuator |
JP3818176B2 (en) * | 2002-03-06 | 2006-09-06 | 株式会社村田製作所 | RFMEMS element |
EP1343190A3 (en) * | 2002-03-08 | 2005-04-20 | Murata Manufacturing Co., Ltd. | Variable capacitance element |
US6876282B2 (en) * | 2002-05-17 | 2005-04-05 | International Business Machines Corporation | Micro-electro-mechanical RF switch |
AU2003256360A1 (en) * | 2002-06-25 | 2004-01-06 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US7531898B2 (en) * | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
US7547623B2 (en) * | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
US6686820B1 (en) * | 2002-07-11 | 2004-02-03 | Intel Corporation | Microelectromechanical (MEMS) switching apparatus |
JP4186727B2 (en) * | 2002-07-26 | 2008-11-26 | 松下電器産業株式会社 | switch |
US7551048B2 (en) | 2002-08-08 | 2009-06-23 | Fujitsu Component Limited | Micro-relay and method of fabricating the same |
KR100485787B1 (en) * | 2002-08-20 | 2005-04-28 | 삼성전자주식회사 | Micro Electro Mechanical Structure RF swicth |
AU2002331725A1 (en) * | 2002-08-26 | 2004-03-11 | International Business Machines Corporation | Diaphragm activated micro-electromechanical switch |
US6621022B1 (en) * | 2002-08-29 | 2003-09-16 | Intel Corporation | Reliable opposing contact structure |
US6951634B2 (en) * | 2002-09-18 | 2005-10-04 | Battelle Energy Alliance, Llc | Process for recovery of daughter isotopes from a source material |
US7463125B2 (en) * | 2002-09-24 | 2008-12-09 | Maxim Integrated Products, Inc. | Microrelays and microrelay fabrication and operating methods |
TWI225899B (en) * | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
US7202764B2 (en) * | 2003-07-08 | 2007-04-10 | International Business Machines Corporation | Noble metal contacts for micro-electromechanical switches |
JP2005055670A (en) * | 2003-08-04 | 2005-03-03 | Seiko Epson Corp | Mems device, method of manufacturing the same, and mems module |
JPWO2005015595A1 (en) * | 2003-08-07 | 2006-10-05 | 富士通株式会社 | Microswitching element and method for manufacturing the same |
WO2005027257A1 (en) * | 2003-09-08 | 2005-03-24 | Murata Manufacturing Co., Ltd. | Variable capacitance element |
US7049216B2 (en) * | 2003-10-14 | 2006-05-23 | Unitive International Limited | Methods of providing solder structures for out plane connections |
US7265477B2 (en) * | 2004-01-05 | 2007-09-04 | Chang-Feng Wan | Stepping actuator and method of manufacture therefore |
WO2005101499A2 (en) | 2004-04-13 | 2005-10-27 | Unitive International Limited | Methods of forming solder bumps on exposed metal pads and related structures |
US7042308B2 (en) * | 2004-06-29 | 2006-05-09 | Intel Corporation | Mechanism to prevent self-actuation in a microelectromechanical switch |
KR100599115B1 (en) | 2004-07-20 | 2006-07-12 | 삼성전자주식회사 | Vibration type MEMS switch and fabricating method thereof |
US7753072B2 (en) * | 2004-07-23 | 2010-07-13 | Afa Controls Llc | Valve assemblies including at least three chambers and related methods |
KR100619110B1 (en) * | 2004-10-21 | 2006-09-04 | 한국전자통신연구원 | Micro-electro mechanical systems switch and a method of fabricating the same |
US20060205170A1 (en) * | 2005-03-09 | 2006-09-14 | Rinne Glenn A | Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices |
KR100744543B1 (en) * | 2005-12-08 | 2007-08-01 | 한국전자통신연구원 | Micro-electro mechanical systems switch and method of fabricating the same switch |
US7932615B2 (en) * | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
JP4334581B2 (en) * | 2007-04-27 | 2009-09-30 | 株式会社東芝 | Electrostatic actuator |
US7864006B2 (en) * | 2007-05-09 | 2011-01-04 | Innovative Micro Technology | MEMS plate switch and method of manufacture |
US7786653B2 (en) * | 2007-07-03 | 2010-08-31 | Northrop Grumman Systems Corporation | MEMS piezoelectric switch |
WO2009033266A1 (en) * | 2007-09-10 | 2009-03-19 | The Governors Of The University Of Alberta | Light emitting semiconductor diode |
JP5081038B2 (en) * | 2008-03-31 | 2012-11-21 | パナソニック株式会社 | MEMS switch and manufacturing method thereof |
US8304274B2 (en) * | 2009-02-13 | 2012-11-06 | Texas Instruments Incorporated | Micro-electro-mechanical system having movable element integrated into substrate-based package |
US9455105B2 (en) * | 2010-09-27 | 2016-09-27 | Kulite Semiconductor Products, Inc. | Carbon nanotube or graphene based pressure switch |
US9016133B2 (en) * | 2011-01-05 | 2015-04-28 | Nxp, B.V. | Pressure sensor with pressure-actuated switch |
EP2607972B1 (en) * | 2011-12-22 | 2016-04-27 | The Swatch Group Research and Development Ltd. | Watertight push button for watch |
EP2674392B1 (en) * | 2012-06-12 | 2017-12-27 | ams international AG | Integrated circuit with pressure sensor and manufacturing method |
US11107594B2 (en) * | 2018-10-31 | 2021-08-31 | Ge-Hitachi Nuclear Energy Americas Llc | Passive electrical component for safety system shutdown using Gauss' Law |
US11501928B2 (en) | 2020-03-27 | 2022-11-15 | Menlo Microsystems, Inc. | MEMS device built on substrate with ruthenium based contact surface material |
EP4057317A1 (en) * | 2021-03-11 | 2022-09-14 | Siemens Aktiengesellschaft | Encapsulated mems switching element, device and manufacturing method |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2927255A (en) * | 1954-07-02 | 1960-03-01 | Erdco Inc | Electrostatic controls |
US2931954A (en) * | 1956-03-14 | 1960-04-05 | Erdco Inc | Electrostatic controls and memory systems |
US3577631A (en) * | 1967-05-16 | 1971-05-04 | Texas Instruments Inc | Process for fabricating infrared detector arrays and resulting article of manufacture |
US3539705A (en) * | 1968-05-31 | 1970-11-10 | Westinghouse Electric Corp | Microelectronic conductor configurations and method of making the same |
US3681134A (en) * | 1968-05-31 | 1972-08-01 | Westinghouse Electric Corp | Microelectronic conductor configurations and methods of making the same |
US3600292A (en) * | 1969-03-11 | 1971-08-17 | Westinghouse Electric Corp | Localized machining and deposition for microelectronic components by sputtering |
US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
US3796976A (en) * | 1971-07-16 | 1974-03-12 | Westinghouse Electric Corp | Microwave stripling circuits with selectively bondable micro-sized switches for in-situ tuning and impedance matching |
US4021766A (en) * | 1975-07-28 | 1977-05-03 | Aine Harry E | Solid state pressure transducer of the leaf spring type and batch method of making same |
US4203128A (en) * | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
GB1584914A (en) * | 1978-03-02 | 1981-02-18 | Standard Telephones Cables Ltd | Semiconductor actuated switching devices |
US4229732A (en) * | 1978-12-11 | 1980-10-21 | International Business Machines Corporation | Micromechanical display logic and array |
US4332000A (en) * | 1980-10-03 | 1982-05-25 | International Business Machines Corporation | Capacitive pressure transducer |
US4342227A (en) * | 1980-12-24 | 1982-08-03 | International Business Machines Corporation | Planar semiconductor three direction acceleration detecting device and method of fabrication |
GB2095911B (en) * | 1981-03-17 | 1985-02-13 | Standard Telephones Cables Ltd | Electrical switch device |
US4696188A (en) * | 1981-10-09 | 1987-09-29 | Honeywell Inc. | Semiconductor device microstructure |
US4472239A (en) * | 1981-10-09 | 1984-09-18 | Honeywell, Inc. | Method of making semiconductor device |
GB8401250D0 (en) * | 1984-01-18 | 1984-02-22 | British Telecomm | Semiconductor fabrication |
US4543457A (en) * | 1984-01-25 | 1985-09-24 | Transensory Devices, Inc. | Microminiature force-sensitive switch |
US4581624A (en) * | 1984-03-01 | 1986-04-08 | Allied Corporation | Microminiature semiconductor valve |
US4674180A (en) * | 1984-05-01 | 1987-06-23 | The Foxboro Company | Method of making a micromechanical electric shunt |
US4959515A (en) * | 1984-05-01 | 1990-09-25 | The Foxboro Company | Micromechanical electric shunt and encoding devices made therefrom |
US4680606A (en) * | 1984-06-04 | 1987-07-14 | Tactile Perceptions, Inc. | Semiconductor transducer |
US4595855A (en) * | 1984-12-21 | 1986-06-17 | General Electric Company | Synchronously operable electrical current switching apparatus |
US4665610A (en) * | 1985-04-22 | 1987-05-19 | Stanford University | Method of making a semiconductor transducer having multiple level diaphragm structure |
US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
US4673777A (en) * | 1986-06-09 | 1987-06-16 | Motorola, Inc. | Microbeam sensor contact damper |
US4755706A (en) * | 1986-06-19 | 1988-07-05 | General Electric Company | Piezoelectric relays in sealed enclosures |
US4742263A (en) * | 1986-08-15 | 1988-05-03 | Pacific Bell | Piezoelectric switch |
US4697118A (en) * | 1986-08-15 | 1987-09-29 | General Electric Company | Piezoelectric switch |
US4737660A (en) * | 1986-11-13 | 1988-04-12 | Transensory Device, Inc. | Trimmable microminiature force-sensitive switch |
GB2215914B (en) * | 1988-03-17 | 1991-07-03 | Emi Plc Thorn | A microengineered diaphragm pressure switch and a method of manufacture thereof |
US4882993A (en) * | 1988-08-05 | 1989-11-28 | The United States Of America As Represented By The Secretary Of The Army | Electronic back-up safety mechanism for hand-emplaced land mines |
US4893048A (en) * | 1988-10-03 | 1990-01-09 | General Electric Company | Multi-gap switch |
US4922253A (en) * | 1989-01-03 | 1990-05-01 | Westinghouse Electric Corp. | High attenuation broadband high speed RF shutter and method of making same |
US5237199A (en) * | 1989-04-13 | 1993-08-17 | Seiko Epson Corporation | Semiconductor device with interlayer insulating film covering the chip scribe lines |
US5051643A (en) * | 1990-08-30 | 1991-09-24 | Motorola, Inc. | Electrostatically switched integrated relay and capacitor |
US5155061A (en) * | 1991-06-03 | 1992-10-13 | Allied-Signal Inc. | Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures |
US5177331A (en) * | 1991-07-05 | 1993-01-05 | Delco Electronics Corporation | Impact detector |
DE4205029C1 (en) * | 1992-02-19 | 1993-02-11 | Siemens Ag, 8000 Muenchen, De | Micro-mechanical electrostatic relay - has tongue-shaped armature etched from surface of silicon@ substrate |
US5479042A (en) * | 1993-02-01 | 1995-12-26 | Brooktree Corporation | Micromachined relay and method of forming the relay |
-
1993
- 1993-02-01 US US08/012,055 patent/US5479042A/en not_active Expired - Lifetime
-
1994
- 1994-01-31 WO PCT/US1994/001091 patent/WO1994018688A1/en active IP Right Grant
- 1994-01-31 CA CA 2155121 patent/CA2155121C/en not_active Expired - Fee Related
- 1994-01-31 EP EP19940907378 patent/EP0681739B1/en not_active Expired - Lifetime
- 1994-01-31 DE DE1994617725 patent/DE69417725T2/en not_active Expired - Fee Related
- 1994-01-31 JP JP51813194A patent/JPH08509093A/en active Pending
-
1995
- 1995-05-18 US US08/443,456 patent/US5627396A/en not_active Expired - Lifetime
- 1995-05-19 US US08/445,139 patent/US5620933A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5479042A (en) | 1995-12-26 |
DE69417725D1 (en) | 1999-05-12 |
US5620933A (en) | 1997-04-15 |
US5627396A (en) | 1997-05-06 |
DE69417725T2 (en) | 1999-10-14 |
EP0681739A1 (en) | 1995-11-15 |
EP0681739B1 (en) | 1999-04-07 |
CA2155121C (en) | 2000-10-17 |
WO1994018688A1 (en) | 1994-08-18 |
JPH08509093A (en) | 1996-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2155121A1 (en) | Micromachined Relay and Method of Forming the Relay | |
US6171881B1 (en) | Acceleration sensor and process for the production thereof | |
US6511894B2 (en) | MEMS relay and method of fabricating the same | |
US5386142A (en) | Semiconductor structures having environmentally isolated elements and method for making the same | |
JP4159599B2 (en) | Semiconductor manufacturing using contact treatment for wraparound flange interface | |
US20020005341A1 (en) | Radio device and measuring device utilizing electrostatic microrelay and electrostatic microrelay | |
US20040113513A1 (en) | Microelectromechanical system (MEMS) devices and fabricating methods | |
US5549785A (en) | Method of producing a semiconductor dynamic sensor | |
US5200363A (en) | Method for manufacturing a semiconductor package including a glass support | |
JP2000133616A (en) | Integrated device and manufacture thereof | |
EP0307671A3 (en) | Method of making an electrically programmable integrated circuit with meltable contact bridges | |
JPH06267382A (en) | Pressure switch and manufacture thereof | |
WO2001029529A3 (en) | Integrated packaging of micromechanical sensors and control circuits | |
JP2004127871A (en) | Micro relay and manufacturing method of micro relay | |
US6750078B2 (en) | MEMS switch having hexsil beam and method of integrating MEMS switch with a chip | |
JP2000348593A (en) | Micro-relay | |
US7382218B2 (en) | Micromechanical switch and production process thereof | |
JP4032476B2 (en) | Manufacturing method of micro device | |
JPH0410700Y2 (en) | ||
JPH11218543A (en) | Acceleration sensor | |
JP2000082824A (en) | Manufacture of semiconductor mechanical strain sensor | |
JP2001201418A (en) | Electrostatic capacity type semiconductor pressure sensor and its manufacturing method | |
JP2000180282A (en) | Semiconductor pressure sensor | |
JPH07273351A (en) | Semiconductor sensor | |
US6355578B1 (en) | Manufacturing method for a composite device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |