CA2164357A1 - Article Comprising Organic Thin Film Transistors - Google Patents
Article Comprising Organic Thin Film TransistorsInfo
- Publication number
- CA2164357A1 CA2164357A1 CA2164357A CA2164357A CA2164357A1 CA 2164357 A1 CA2164357 A1 CA 2164357A1 CA 2164357 A CA2164357 A CA 2164357A CA 2164357 A CA2164357 A CA 2164357A CA 2164357 A1 CA2164357 A1 CA 2164357A1
- Authority
- CA
- Canada
- Prior art keywords
- organic
- material layer
- tfts
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000011368 organic material Substances 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000015654 memory Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
Abstract
Articles according to an embodiment of the invention comprise an improved organic thin film transistor (TFT) that can have substantially higher source/drain current on/off ratio than conventional organic TFTs. An exemplary TFT (20) according to the invention comprises, in addition to a p-type first organic material layer (16) (e.g., .alpha.-6T), an n-type second organic material layer (21) (e.g., Alq) in contact with the first material layer. TFTs according to the invention can be advantageously used in, for instance, active liquid crystal displays and electronic memories, and a preferred embodiment is expected to find wide use in complementary circuits. The preferred embodiments are organic TFTs that can be either n-channel or p-channel transistors, depending on biasing conditions. In aspecific embodiment the transistor comprises a 15 nm thick layer of .alpha.-6T (115) with a 40 nm thick layer of C 60 thereon (116). The latter was protected againstdegradation by the ambient by means of an appropriat e electrically inert layer.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35302494A | 1994-12-09 | 1994-12-09 | |
US353,024 | 1994-12-09 | ||
US08/441,142 US6278127B1 (en) | 1994-12-09 | 1995-05-15 | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
US441,142 | 1995-05-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2164357A1 true CA2164357A1 (en) | 1996-06-10 |
CA2164357C CA2164357C (en) | 2000-04-04 |
Family
ID=26997757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002164357A Expired - Fee Related CA2164357C (en) | 1994-12-09 | 1995-12-04 | Article comprising organic thin film transistors |
Country Status (6)
Country | Link |
---|---|
US (1) | US6278127B1 (en) |
EP (1) | EP0716459A3 (en) |
JP (1) | JPH08228034A (en) |
KR (1) | KR960026979A (en) |
CA (1) | CA2164357C (en) |
MX (1) | MX9505069A (en) |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100303934B1 (en) * | 1997-03-25 | 2001-09-29 | 포만 제프리 엘 | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
JP2000208771A (en) * | 1999-01-11 | 2000-07-28 | Hitachi Ltd | Semiconductor device, liquid cystal display device, and their manufacturing |
NO314525B1 (en) * | 1999-04-22 | 2003-03-31 | Thin Film Electronics Asa | Process for the preparation of organic semiconductor devices in thin film |
DE10061299A1 (en) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Device for determining and / or forwarding at least one environmental influence, production method and use thereof |
GB2371910A (en) * | 2001-01-31 | 2002-08-07 | Seiko Epson Corp | Display devices |
US7026643B2 (en) * | 2001-05-04 | 2006-04-11 | International Business Machines Corporation | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
US6437422B1 (en) * | 2001-05-09 | 2002-08-20 | International Business Machines Corporation | Active devices using threads |
KR100409040B1 (en) * | 2001-06-13 | 2003-12-11 | 부진효 | Preparation of organic polymer-like thin films from thiopene derivatives using plasma enhanced chemical vapor deposition |
US6734038B2 (en) * | 2001-09-04 | 2004-05-11 | The Trustees Of Princeton University | Method of manufacturing high-mobility organic thin films using organic vapor phase deposition |
JP3856202B2 (en) | 2001-10-05 | 2006-12-13 | 日本電気株式会社 | Organic thin film transistor |
JP3823312B2 (en) | 2001-10-18 | 2006-09-20 | 日本電気株式会社 | Organic thin film transistor |
EP1306910B1 (en) * | 2001-10-24 | 2011-08-17 | Imec | Ambipolar organic transistors |
EP1306909A1 (en) | 2001-10-24 | 2003-05-02 | Interuniversitair Micro-Elektronica Centrum | Ambipolar organic transistors |
US6946676B2 (en) | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
JP4149168B2 (en) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP4224578B2 (en) * | 2002-03-26 | 2009-02-18 | 独立行政法人産業技術総合研究所 | Organic thin film transistor |
AU2003222456A1 (en) * | 2002-04-26 | 2003-11-10 | Canon Kabushiki Kaisha | Organic semiconductor device, rf modulation circuit, and ic card |
DE10219121A1 (en) * | 2002-04-29 | 2003-11-27 | Infineon Technologies Ag | Silicon particles as additives to improve charge carrier mobility in organic semiconductors |
JP4511108B2 (en) * | 2002-05-31 | 2010-07-28 | オンコリクス インコーポレイテッド | Human prolactin antagonist-angiogenesis inhibitor fusion protein |
JP4878429B2 (en) * | 2002-07-22 | 2012-02-15 | 株式会社リコー | Active element and EL display element having the same |
US7078702B2 (en) * | 2002-07-25 | 2006-07-18 | General Electric Company | Imager |
US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
JP2004103905A (en) * | 2002-09-11 | 2004-04-02 | Pioneer Electronic Corp | Organic semiconductor element |
US6852996B2 (en) * | 2002-09-25 | 2005-02-08 | Stmicroelectronics, Inc. | Organic semiconductor sensor device |
JP4545373B2 (en) * | 2002-11-07 | 2010-09-15 | 旭化成株式会社 | Organic semiconductor thin film and manufacturing method thereof |
JP2004165427A (en) * | 2002-11-13 | 2004-06-10 | Konica Minolta Holdings Inc | Organic thin film transistor element |
KR20050096162A (en) * | 2003-01-28 | 2005-10-05 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Electronic device |
JP2004235298A (en) * | 2003-01-29 | 2004-08-19 | Pioneer Electronic Corp | Organic semiconductor element and method for manufacturing the same |
CN1282260C (en) * | 2003-01-30 | 2006-10-25 | 中国科学院长春应用化学研究所 | Heterojunction-type organic semiconductor field effect transistor containing grid insulating layer and its manufacturing method |
US7166689B2 (en) | 2003-02-13 | 2007-01-23 | Ricoh Company, Ltd. | Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor |
US6855951B2 (en) * | 2003-03-19 | 2005-02-15 | Xerox Corporation | Fluorinated polythiophenes and devices thereof |
US7297621B2 (en) * | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
US20060226420A1 (en) * | 2003-07-10 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Organic thin-film transistor and process for fabricating the same, active matrix type display employing it and radio identification tag |
JP4194436B2 (en) * | 2003-07-14 | 2008-12-10 | キヤノン株式会社 | Field effect organic transistor |
US6861664B2 (en) * | 2003-07-25 | 2005-03-01 | Xerox Corporation | Device with n-type semiconductor |
JP2005079204A (en) * | 2003-08-28 | 2005-03-24 | Canon Inc | Field effect transistor and its manufacturing method |
JP2005079203A (en) | 2003-08-28 | 2005-03-24 | Canon Inc | Field effect transistor and its manufacturing method |
KR100623091B1 (en) * | 2003-10-01 | 2006-09-18 | 한국과학기술연구원 | Method for manufacturing Thin Film Transistor |
KR100692448B1 (en) | 2003-11-17 | 2007-03-09 | 후지제롯쿠스 가부시끼가이샤 | Organic semiconductor transistor element, semiconductor device of using thereof and method of manufacturing the semiconductor device |
KR101007813B1 (en) * | 2003-11-24 | 2011-01-14 | 삼성전자주식회사 | Organic Thin Film Transistor Containing Buffer Layer |
JP4736318B2 (en) * | 2003-11-28 | 2011-07-27 | Tdk株式会社 | Manufacturing method of laminated body and manufacturing method of organic field effect transistor |
EP1617484A1 (en) * | 2003-12-08 | 2006-01-18 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor, electrical device array and method for manufacturing those |
JP2005259852A (en) * | 2004-03-10 | 2005-09-22 | Sony Corp | Field effect transistor |
US7838871B2 (en) * | 2004-03-24 | 2010-11-23 | Samsung Mobile Display Co., Ltd. | Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor |
EP1580822A1 (en) * | 2004-03-24 | 2005-09-28 | Samsung SDI Co., Ltd. | Organic field-effect-transistor and method for its production |
JP4449549B2 (en) | 2004-04-15 | 2010-04-14 | 日本電気株式会社 | ORGANIC THIN FILM TRANSISTOR USING MATERIAL HAVING BRIDGED CYCLIC HYDROCARBON LACTONE STRUCTURE AND MANUFACTURING METHOD |
KR100615216B1 (en) * | 2004-04-29 | 2006-08-25 | 삼성에스디아이 주식회사 | Organic Thin Film Transistor comprising organic acceptor film |
US7372070B2 (en) * | 2004-05-12 | 2008-05-13 | Matsushita Electric Industrial Co., Ltd. | Organic field effect transistor and method of manufacturing the same |
US7045814B2 (en) | 2004-06-24 | 2006-05-16 | Lucent Technologies Inc. | OFET structures with both n- and p-type channels |
JP2006295104A (en) * | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | Light emitting element and light emitting device using the same |
CN101006588B (en) | 2004-08-31 | 2010-07-28 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
AT413896B (en) * | 2004-09-08 | 2006-07-15 | Nanoident Technologies Ag | DEVICE FOR DETECTING A FINGERPRINT |
JP4737964B2 (en) * | 2004-09-30 | 2011-08-03 | 三洋電機株式会社 | Organic semiconductor device |
GB0423006D0 (en) * | 2004-10-15 | 2004-11-17 | Cambridge Display Tech Ltd | Organic transistor |
KR100603393B1 (en) * | 2004-11-10 | 2006-07-20 | 삼성에스디아이 주식회사 | Organic TFT, Method for fabricating the same and Flat panel display with OTFT |
JP2006147829A (en) * | 2004-11-19 | 2006-06-08 | Tohoku Univ | Semiconductor device |
EP1684365A3 (en) * | 2005-01-20 | 2008-08-13 | Fuji Electric Holdings Co., Ltd. | Transistor |
KR100637210B1 (en) * | 2005-01-28 | 2006-10-23 | 삼성에스디아이 주식회사 | A thin film transistor, a method for preparing the same and a flat panel display therewith |
KR100647683B1 (en) * | 2005-03-08 | 2006-11-23 | 삼성에스디아이 주식회사 | Organic thin film transistor and flat display apparatus comprising the same |
US7671448B2 (en) * | 2005-03-24 | 2010-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two organic semiconductor layers |
CN100466125C (en) * | 2005-04-18 | 2009-03-04 | 中国科学院长春应用化学研究所 | Electric contacting material and fapparatus of containing organic hetero junction |
KR20060116534A (en) * | 2005-05-10 | 2006-11-15 | 삼성에스디아이 주식회사 | A thin film transistor, a method for preparing the same and a flat panel display employing the same |
TWI321968B (en) * | 2005-07-15 | 2010-03-11 | Lg Chemical Ltd | Organic light meitting device and method for manufacturing the same |
JP5078246B2 (en) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
US7397072B2 (en) * | 2005-12-01 | 2008-07-08 | Board Of Regents, The University Of Texas System | Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device |
US7651885B2 (en) * | 2005-12-16 | 2010-01-26 | Xerox Corporation | Electronic device fabrication process |
US8637138B2 (en) * | 2005-12-27 | 2014-01-28 | Palo Alto Research Center Incorporated | Layered structures on thin substrates |
US7816146B2 (en) * | 2005-12-27 | 2010-10-19 | Palo Alto Research Center Incorporated | Passive electronic devices |
US7784173B2 (en) * | 2005-12-27 | 2010-08-31 | Palo Alto Research Center Incorporated | Producing layered structures using printing |
US7521710B2 (en) | 2006-02-16 | 2009-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor |
US20070215863A1 (en) * | 2006-03-15 | 2007-09-20 | Lucent Technologies Inc. | Fabricating apparatus with doped organic semiconductors |
JP5230597B2 (en) | 2006-03-29 | 2013-07-10 | プラスティック ロジック リミテッド | Electronic device with self-aligned electrodes |
JP2007273594A (en) * | 2006-03-30 | 2007-10-18 | Nippon Kayaku Co Ltd | Field-effect transistor |
US8247801B2 (en) * | 2006-03-31 | 2012-08-21 | Imec | Organic semi-conductor photo-detecting device |
JP5167560B2 (en) * | 2006-03-31 | 2013-03-21 | 日本化薬株式会社 | Field effect transistor |
CN100555702C (en) * | 2006-04-29 | 2009-10-28 | 中国科学院长春应用化学研究所 | Organic semiconductor crystal thin film and method for preparation of weak oriented epitaxial growth and application |
KR100897881B1 (en) * | 2006-06-02 | 2009-05-18 | 삼성전자주식회사 | Memory of fabricating organic memory device employing stack of organic material layer and buckminster fullerene layer as a data storage element |
CN101523631B (en) | 2006-10-12 | 2010-09-22 | 出光兴产株式会社 | Organic thin film transistor element and organic thin film light emitting transistor |
WO2008059816A1 (en) | 2006-11-14 | 2008-05-22 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
CN101563796B (en) | 2006-11-14 | 2011-07-06 | 出光兴产株式会社 | Organic Thin Film Transistor and Organic Thin Film Light Emitting Transistor |
WO2008062841A1 (en) | 2006-11-24 | 2008-05-29 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
US8148720B2 (en) | 2006-11-24 | 2012-04-03 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
JP5308164B2 (en) | 2006-12-04 | 2013-10-09 | 出光興産株式会社 | Organic thin film transistor and organic thin film light emitting transistor |
US8207525B2 (en) | 2006-12-04 | 2012-06-26 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light emitting transistor |
JP2008159666A (en) * | 2006-12-21 | 2008-07-10 | Konica Minolta Holdings Inc | Organic electronic device, organic thin-film transistor, and manufacturing method thereof |
US8129714B2 (en) * | 2007-02-16 | 2012-03-06 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, complementary transistor circuit device |
WO2008099863A1 (en) * | 2007-02-16 | 2008-08-21 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, and complementary transistor circuit device |
JP5328122B2 (en) * | 2007-08-20 | 2013-10-30 | ローム株式会社 | Organic thin film transistor |
WO2009028453A1 (en) * | 2007-08-31 | 2009-03-05 | Konica Minolta Holdings, Inc. | Thin film transistor |
CN101809749A (en) | 2007-09-26 | 2010-08-18 | 出光兴产株式会社 | Organic thin film transistor |
FR2922310B1 (en) * | 2007-10-15 | 2012-05-11 | Univ Pierre Et Marie Curie Paris Vi | SEMICONDUCTOR TRANSDUCER AND ITS USE IN A SENSOR OF ELECTRON DONOR OR ACCEPTOR SPECIES. |
EP2056373A1 (en) * | 2007-10-30 | 2009-05-06 | Hueck Folien Ges.m.b.H. | Vapour deposition method for sheet-like materials with fuller's earth |
TW201002722A (en) | 2008-01-22 | 2010-01-16 | Ricoh Co Ltd | Benzobisthiazole compound, benzobisthiazole polymer, organic film including the compound or polymer and transistor including the organic film |
US7821000B2 (en) * | 2008-02-01 | 2010-10-26 | Alcatel-Lucent Usa Inc. | Method of doping organic semiconductors |
JP2010114184A (en) * | 2008-11-05 | 2010-05-20 | Univ Of Yamanashi | Ambipolar-type organic field-effect transistor |
JP2010225758A (en) * | 2009-03-23 | 2010-10-07 | Fuji Xerox Co Ltd | Organic semiconductor transistor |
JP4893767B2 (en) | 2009-03-24 | 2012-03-07 | 富士ゼロックス株式会社 | Organic semiconductor transistor |
JP5347690B2 (en) | 2009-04-30 | 2013-11-20 | 富士ゼロックス株式会社 | Organic electroluminescent device and display medium |
US9011729B2 (en) | 2010-04-22 | 2015-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin-film transistor |
JP5966353B2 (en) | 2011-12-26 | 2016-08-10 | 富士ゼロックス株式会社 | Organic semiconductor transistor |
KR102372207B1 (en) * | 2017-07-27 | 2022-03-07 | 삼성전자주식회사 | Thin film transistor and method of manufacturing the same |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021835A (en) * | 1974-01-25 | 1977-05-03 | Hitachi, Ltd. | Semiconductor device and a method for fabricating the same |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
EP0113540A3 (en) * | 1982-12-10 | 1985-06-05 | Western Electric Company, Incorporated | Improvements in or relating to semiconductor devices, and methods of making same |
JPH01259563A (en) * | 1988-04-08 | 1989-10-17 | Mitsubishi Electric Corp | Field effect transistor |
JP2813428B2 (en) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | Field effect transistor and liquid crystal display device using the field effect transistor |
JPH0444362A (en) * | 1990-06-12 | 1992-02-14 | Nec Corp | Organic quantum semiconductor and quantum semiconductor element |
FR2664430B1 (en) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS. |
US5315129A (en) * | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
JPH04158576A (en) * | 1990-10-23 | 1992-06-01 | Toshiba Corp | Organic thin film device |
US5298455A (en) * | 1991-01-30 | 1994-03-29 | Tdk Corporation | Method for producing a non-single crystal semiconductor device |
US5247193A (en) * | 1991-02-01 | 1993-09-21 | Olympus Optical Co., Ltd. | Semiconductor insulated gate device with four electrodes |
JP3522771B2 (en) * | 1991-03-22 | 2004-04-26 | 三菱電機株式会社 | Inverter |
JP3224829B2 (en) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | Organic field effect device |
US5349203A (en) * | 1991-12-09 | 1994-09-20 | Mitsubishi Denki Kabushiki Kaisha | Organic electric-field switching device |
JPH05308146A (en) * | 1992-05-01 | 1993-11-19 | Ricoh Co Ltd | Organic photovoltaic element |
US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JPH06273811A (en) * | 1993-03-22 | 1994-09-30 | Mitsubishi Electric Corp | Opto-electronic functional material and production of thin film of the same |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US5612228A (en) * | 1996-04-24 | 1997-03-18 | Motorola | Method of making CMOS with organic and inorganic semiconducting region |
-
1995
- 1995-05-15 US US08/441,142 patent/US6278127B1/en not_active Expired - Lifetime
- 1995-11-28 EP EP95308525A patent/EP0716459A3/en not_active Withdrawn
- 1995-12-04 CA CA002164357A patent/CA2164357C/en not_active Expired - Fee Related
- 1995-12-05 MX MX9505069A patent/MX9505069A/en not_active IP Right Cessation
- 1995-12-08 KR KR1019950049119A patent/KR960026979A/en not_active Application Discontinuation
- 1995-12-08 JP JP7345004A patent/JPH08228034A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH08228034A (en) | 1996-09-03 |
MX9505069A (en) | 1997-01-31 |
US6278127B1 (en) | 2001-08-21 |
CA2164357C (en) | 2000-04-04 |
KR960026979A (en) | 1996-07-22 |
EP0716459A2 (en) | 1996-06-12 |
EP0716459A3 (en) | 1997-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2164357A1 (en) | Article Comprising Organic Thin Film Transistors | |
WO2001048822A3 (en) | Thin-film transistor circuitry | |
US6756741B2 (en) | Driving circuit for unit pixel of organic light emitting displays | |
Arai | Oxide‐TFT technologies for next‐generation AMOLED displays | |
US10957252B2 (en) | Active matrix OLED display with normally-on thin-film transistors | |
US8477085B2 (en) | Semiconductor device and driving method thereof | |
AU2318797A (en) | Method for formation of thin film transistors on plastic substrates | |
EP2061086A3 (en) | Thin film field effect transistor and display using the same | |
WO2003092077A3 (en) | Electronic displays | |
JP2003223138A5 (en) | ||
KR920012992A (en) | Electro-optical device | |
KR960009232A (en) | Semiconductor circuit for electro-optical device and manufacturing method thereof | |
EP1848039A3 (en) | Complementary mis device | |
EP1193741A3 (en) | Semiconductor device having thin film transistor for supplying current to driven element | |
EP2061087A3 (en) | Thin film field effect transistor and display using the same | |
WO1999031720A3 (en) | Thin film transistors and electronic devices comprising such | |
US6091115A (en) | Semiconductor device including a crystalline silicon film | |
WO1999030369A3 (en) | Thin film transistors and electronic devices comprising such | |
EP0766120A3 (en) | Active matrix substrate and display device incorporating the same | |
AU2002364087A1 (en) | Finfet sram cell using inverted finfet thin film transistors | |
AU2003247058A1 (en) | Electroluminescent display device having pixels with nmos transistors | |
Lee et al. | Transparent AMOLED display driven by split oxide TFT backplane | |
JPS6452128A (en) | Active device | |
Young et al. | Operation of SOI CMOS devices at liquid-nitrogen temperature | |
JPS644070A (en) | Thin film transistor and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20151204 |