CA2169823A1 - Screened capacitive sensor - Google Patents
Screened capacitive sensorInfo
- Publication number
- CA2169823A1 CA2169823A1 CA002169823A CA2169823A CA2169823A1 CA 2169823 A1 CA2169823 A1 CA 2169823A1 CA 002169823 A CA002169823 A CA 002169823A CA 2169823 A CA2169823 A CA 2169823A CA 2169823 A1 CA2169823 A1 CA 2169823A1
- Authority
- CA
- Canada
- Prior art keywords
- capacitor
- plate
- reference potential
- capacitance
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000009530 blood pressure measurement Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 17
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
- G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
- G01D5/2417—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying separation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
Abstract
A pressure sensor measures pressure by measuring capacitance between two capacitive plates. Pressure change appears as a change in capacitance. Stray capacitance interferes with this measurement. The stray capacitance arises between the capacitor plates and surrounding material Circuitry reduces stray capacitance by maintaining substantially no potential difference between a capacitor plate and surrounding material responsible for stray capacitance.
Description
WO 95/~8752 2 1 6 9 8 2 3 PCT/US9J/09295 SCREENED CAPACITIVE SeNSOR
~ACKGROUND OF THE INVENTION
The present invention relates to a pressure sensor. In particular, the invention relates to a capacitance pressure sensor having circuitry to reduce the effects of stray capacitance.
The prior art shows various solid state pressure sensors which have a deflectable diaphragm for sensing pressure. Some are capable of being formed by batch processing. It is desirable to have solid state pressure sensors made of relatively rigid materials, such as semiconductor materials.
A capacitive pressure sensor measures pressure by measuring capacitance between two capacitive plates.
Pressure change appears as a change in capacitance. In a pressure sensor made from a semiconductor, stray capacitance can be introduced in capacitance measurements and cause errors in measurements. This stray capacitance arises between the plate of the capacitor and nearby semiconductor material which acts as a capacitor plate.
U.S. Patent 4,612,599, issued September 16, 1986, entitled "Capacitive Pressure Sensor," shows a pressure sensor formed with silicon. U.S. Patent 4,800,758, issued January 3, 1989, entitled "Pressure Transducer with Stress Isolation for Hard Mounting"
describes a batch fabricated pressure sensor with stress isolation.
SUMMARY OF THE INVENTION
The present invention provides circuitry for-use in a capacitance based pressure sensor. The circuitry reduces the effects of stray capacitance in capacitance measurements used to determine pressure of W095/08752 PcT~s~J~s25s a process fluid. The circuitry includes a variable sensing capacitor having first and second capacitor plates with a capacitance between the plates which varies as a function of a sensed parameter. Each of the capacitor plates has stray capacitance relative to guard plates arranged around the first and second capacitor plates. A reference potential source is provided and a drive circuit provides a drive potential to the first capacitor plate which alternates relative to the reference potential. A sensing circuit connected to the reference potential generates a virtual reference potential substantially equal to the reference potential. Charge sensing circuitry connected to the second capacitor plate senses charge on the second capacitor plate such that there is no potential difference between the second capacitor plate and the guard at the time when charge transfer i8 complete.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a perspective fragmentary view of a suspended diaphragm pressure sensor in accordance with the present invention.
Figure 2 is a cross-sectional view of Figure 1 taken along the line labeled 2-2.
Figure 3 is a cross-sectional view of Figure 1 taken along the line labeled 3-3.
Figure 4 is a cross-sectional perspective view of a differential pressure sensor in accordance with the present invention.
Figure 5 is a cross-sectional view of a diaphragm pair in accordance with the present invention showing system electrical capacitance.
Figure 6 is a schematic diagram of guard capacitance circuitry.
Wo95l08752 2 ~ 6 q 8 2 3 PCT~S~ 329S
Figure 7 is a cross-sectional view of a differential pressure sensor showing capacitor plates used to measure pressure.
Figure 8 is a schematic diagram of circuitry to reduce the effects of stray capacitance in accordance with the invention.
DETAILED ~ESCRIPTION OF THE PREFERRED EMBODIMENTS
The pressure sensor layers of the present invention are made using batch fabrication techniques.
A silicon wafer or layer is etched in a conventional manner to form the desired features and is then formed into a sandwich construction with additional layers of suitable material to form the sensor. Such sensors are described in the U.S. Patent Application entitled SUSPENDED DIAPHRAGM PRESSURE SENSOR filed September 20, 1993, and assigned to the same assignee as the present application, which is hereby incorporated by reference.
Forming a pressure sensor using semiconductor materials often results in stray capacitance which can cause errors in pressure measurement. The capacitance arises because semiconductors are partial conductors and are able to act as the plates of a capacitor. Thus, a stray capacitance arises between the capacitor plate used to measure pressure and the surrounding semiconductor (a guard plate).
Figure 1 is a perspective fragmentary view of suspended diaphragm pressure sensor 10. Suspended diaphragm pressure sensor 10 includes lower substrate 12 and upper substrate 14. Lower diaphragm substrate 16 is bonded to upper substrate 14. Lower diaphragm substrate 16 and upper diaphragm substrate 18 are bonded together.
Lower diaphragm substrate 16 carries channel 20 and electrical contacts 22 and 24. Pressure inlet 26 W095/08752 PCT~S91~ 95 ~ 69~3 -4-extends through upper substrate 14. Upper diaphragm substrate 18 includes upper diaphragm 28 carried by support tab 30.
Figure 2 is a cross-sectional view of suspended diaphragm pressure sensor 10 taken along the line labeled 2-2 in Figure 1. Figure 3 is a cross-sectional view of suspended diaphragm pressure sensor 10 taken along the line labeled 3-3 in Figure 1. Figures 2 and 3 show lower diaphragm 32 coupled to upper diaphragm 28. Upper diaphragm 28 and lower diaphragm 32 form a diaphragm assembly having diaphragm cavity 34 which typically containing a reference pressure applied through channel 20. Upper and lower diaphragms 28 and 32 are joined along their rims. Upper diaphragm 28 and lower diaphragm 32 are suspended in pressure input cavity 36 which is coupled to pressure inlet 26.
In operation, suspended diaphragm pressure sensor is used to sense the difference in pressure between cavity 34 and cavity 36. Diaphragm cavity 34 expands and contracts inside pressure input cavity 36 in response to pressure applied through pressure inlet 26.
This causes upper diaphragm 28 and lower diaphragm 32 to bend inward into diaphragm cavity 34 or to deflect outward away from diaphragm cavity 34. Fluid flows into cavity 34 or out of cavity 34 via channel 20 which extends through tab 30. Deflection of diaphragms 28 and 32 (and therefore applied pressure) is detected with electrical contacts 22 and 24. These contacts are coupled to sensors carried on diaphragms 28 and 32. In one embodiment, these sensors are capacitive plates or metallizations. Diaphragm 28 carries a capacitive plate and diaphragm 32 carries a capacitive plate. The capacitance between these two plates changes as they are W095l08752 2 1 6 9823 pcT~s~1~usl9s displaced due to applied pressure through inlet 26. In another embodiment, electrical contacts 22 and 24 are coupled to a strain gage on a diaphragm which changes resistance as diaphragms 28 and 32 are deformed.
In a preferred embodiment, suspended diaphragm pressure sensor lO is formed of brittle materials such as single crystal silicon or sapphire materials and batch fabricated. These materials provide improved accuracy because of reduced hysteresis and improved dimension stability. Furthermore, materials such as silicon, ceramic and glass, are easily batch fabricated using known fabrication techniques.
Figure 4 is a perspective cross-sectional view of suspended diaphragm differential pressure sensor 40 in accordance with the present invention. Sensor 40 is formed by placing a pair of pressure sensors similar to pressure sensor lO, shown in Figure l, together having a channel (not shown in Figure 4) such as channel 20 in Figure l extending between the diaphragm assemblies.
Differential pressure sensor 40 includes lower substrate 42, upper substrate 44, lower diaphragm substrate 46 and upper diaphragm substrate 48.
Differential pressure is applied via pressure inlets 50A
and 50B. Pressure inlets 50A and 50B are coupled to diaphragm assemblies 54A and ~4B, respectively.
Diaphragm assembly 54A includes upper diaphragm 58A and lower diaphragm 60A which form diaphragm cavity 62A.
Diaphragm cavity 62A is carried in pressure inlet cavity 64A which is coupled to pressure inlet 50A. The structure of diaphragm assembly 54B is similar to that of diaphragm assembly 54A.
In differential pressure sensor 40, diaphragm cavity 62A is coupled to diaphragm cavity 62B through a wo ss,-as7s2 PCT/US~J'l0329S
2~ 6q~3 '~
channel not shown in Figure 4 but which is similar to ~ channel 20 shown in Figure 1. The channel connecting cavities 62A and 62B extends through tabs that support diaphragm assemblies 54A and 54B within cavities 64A and 64B, respectively. Cavities 62A and 62B are filled with a sealed-in quantity of a relatively incompressible fluid so that as one cavity expands due to applied pressure the other cavity contracts.
Deflection of the suspended diaphragms in the present invention is related to applied pressure, either differential or absolute. By detecting this deformation, it is possible to determine pressure. This detection can be measured through any suitable means.
In a preferred embodiment, diaphragm deformation is detected by measuring the change in capacitance between two plates of a capacitor, one carried on each of the diaphragms. Figure 5 is a cross-sectional view of a suspended diaphragm 108 including upper diaphragm 110 and lower diaphragm 112 which carry upper capacitive plate 114 and lower capacitive plate 116, respectively.
Plates 114 and 116 are mounted to diaphragms 110 and 112 through insulating layers 118 and 120, respectively.
The region between diaphragms 110 and 112 form cavity 122 which is preferably oil filled.
Figure 5 shows capacitance CA which is the capacitance between plates 114 and 116. The value of capacitance CA is related to the pressure applied to suspended diaphragm 108. Therefore, by measuring this capacitance, pressure can be determined. However, stray capacitance CSl and CS2 interfere with this measurement.
This capacitance is due to the capacitance between plate 114 and diaphragm 110, and plate 116 and diaphragm 112, respectively. This capacitance arises because ~wogs/~N7s2 _7_ PCT~594/o9~ss insulation layers 118 and 120 separate plates 114 and 116 from diaphragms 110 and 112, respectively.
Therefore, it i8 desirable to eliminate the stray capacitance from the measurement of CA.
Figure 6 shows simplified circuitry 124 to eliminate interference in the measurement of CA due to CS1 and CS2. Circuitry 124 includes square wave driver 130 coupled to a driven side of capacitor CA. One side of capacitor CS1 (i.e. substrate 110) is coupled to electrical ground as is one side of CS2 (i.e. substrate 112). A sense side of capacitor CA is coupled to the positive input of opamp 132. Opamp 132 is connected with negative feedback through integrating capacitor 136. The non-inverting input to opamp 132 provides a virtual ground. The output of opamp 132 is provided to capacitive measurement circuitry which is used to calculate pressure.
Circuitry 124 keeps substrate 110 and substrate 112 at the "same potential" as the sense electrode 116. This is because sense electrode 116 is held at virtual ground by opamp 132 having negative feedback. This reduces the errors in pressure measurements due to stray capacitance because CS2 is not measured by the circuitry connected to electrode 116.
Figure 7 is a cross-sectional view of diaphragm assemblies 54A and 54B showing capacitor plates used to measure pressure. The capacitor plates are connected to contacts A, B, C and D. Diaphragm assemblies 54A and 54B are connected to electrical contact E.
Figure 8 is a schematic diagram of circuitry 140 to reduce the effects of stray capacitance with the invention. Circuit 140 shows capacitors C1 and C2 whose -WO 9~/08752 PCTfUS91J'~295 ~ ~ ~o9 ~3 capacitance varies in response to a differential pressure between diaphragm assemblies 54A and 54B.
Associated with capacitor Cl are stray capacitors CSll and CS12. Associated with capacitor C2 are stray capacitors CS21 and CS22. These capacitors arise due to surrounding semiconductor material. Figure 8 shows electrical contacts A, B, C, D and E, also shown in Figure 7. Contacts A and D are coupled together. This coupling can be done externally or directly on pressure sensor 40 to reduce the number of electrical contacts to pressure sensor 40.
Circuit 140 includes operational amplifier 122 connected to Schmitt trigger 144. Operational amplifier 142 has negative feedback through integrating capacitor C~. The output of Schmitt trigger 144 is coupled to digital logic 146. Power supply +VR and _VR are connected to electrode E and to electrodes A and D
through switches SW6 and SW5, respectively. Electrode B is connected to operational amplifier 142 through switch SWl and electrode C is connected to operational amplifier SW2 through switch SW4. Electrode E is connected to the noninverting input of operational amplifier 142, and electrodes B and C are connected to electrode E through switches SW2 and SW3, respectively.
Switches SWl through SW6 are connected to digital logic 146 which controls switches SWl through SW6.
In operation, operational amplifier 122 provides an output related to the difference in capacitance between capacitors Cl and C2 which is related to differential pressure sensed by sensor 40.
This is a technique for measuring capacitance which is described in U.S. Patent No. 5,083,091 entitled CHARGED
BALANCED FEEDBACK MEASUREMENT CIRCUIT to Frick et al.
W095/0875X 2 1 6 9 8 2 3 PCT~S94/0929S
_g _ Opamp 142 maintains the sense electrodes on capacitors C1 and C2 at a virtual potential, in one embodiment virtual ground. After charge has been distributed, no charge will flow from CS11, CS12, CS21 or CS22 and these capacitances will not enter the measurement. The circuit must drive CS1 and CS22 from the +VR and the _VR power supplies.
The charging current is:
ICh~ng FeXC1t~t1On X (VR-(-V~ )x( CS11 +CS22) With typical values, this current may be on the order of 0.07 ma. (CS11 and CS22 are on the order of 200 x 10-l2 Farads.) This current is compatible with 4-20 ma current loops since the charging current is much less than the ~;n;m~lm available current, 4 ma.
The circuit maintains electrodes B and C at the same potential as electrode E at the time when the charge transfer is complete and the capacitance measurement is taken. This is because the output o~ the integrator formed by opamp 122 is sampled at the point when the charge transfer is completed.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. For example, the invention can be used with other types of sensors and sensor designs where stray capacitance is a problem.
Sl~BSTlTUTE SHEET (RULE 26)
~ACKGROUND OF THE INVENTION
The present invention relates to a pressure sensor. In particular, the invention relates to a capacitance pressure sensor having circuitry to reduce the effects of stray capacitance.
The prior art shows various solid state pressure sensors which have a deflectable diaphragm for sensing pressure. Some are capable of being formed by batch processing. It is desirable to have solid state pressure sensors made of relatively rigid materials, such as semiconductor materials.
A capacitive pressure sensor measures pressure by measuring capacitance between two capacitive plates.
Pressure change appears as a change in capacitance. In a pressure sensor made from a semiconductor, stray capacitance can be introduced in capacitance measurements and cause errors in measurements. This stray capacitance arises between the plate of the capacitor and nearby semiconductor material which acts as a capacitor plate.
U.S. Patent 4,612,599, issued September 16, 1986, entitled "Capacitive Pressure Sensor," shows a pressure sensor formed with silicon. U.S. Patent 4,800,758, issued January 3, 1989, entitled "Pressure Transducer with Stress Isolation for Hard Mounting"
describes a batch fabricated pressure sensor with stress isolation.
SUMMARY OF THE INVENTION
The present invention provides circuitry for-use in a capacitance based pressure sensor. The circuitry reduces the effects of stray capacitance in capacitance measurements used to determine pressure of W095/08752 PcT~s~J~s25s a process fluid. The circuitry includes a variable sensing capacitor having first and second capacitor plates with a capacitance between the plates which varies as a function of a sensed parameter. Each of the capacitor plates has stray capacitance relative to guard plates arranged around the first and second capacitor plates. A reference potential source is provided and a drive circuit provides a drive potential to the first capacitor plate which alternates relative to the reference potential. A sensing circuit connected to the reference potential generates a virtual reference potential substantially equal to the reference potential. Charge sensing circuitry connected to the second capacitor plate senses charge on the second capacitor plate such that there is no potential difference between the second capacitor plate and the guard at the time when charge transfer i8 complete.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a perspective fragmentary view of a suspended diaphragm pressure sensor in accordance with the present invention.
Figure 2 is a cross-sectional view of Figure 1 taken along the line labeled 2-2.
Figure 3 is a cross-sectional view of Figure 1 taken along the line labeled 3-3.
Figure 4 is a cross-sectional perspective view of a differential pressure sensor in accordance with the present invention.
Figure 5 is a cross-sectional view of a diaphragm pair in accordance with the present invention showing system electrical capacitance.
Figure 6 is a schematic diagram of guard capacitance circuitry.
Wo95l08752 2 ~ 6 q 8 2 3 PCT~S~ 329S
Figure 7 is a cross-sectional view of a differential pressure sensor showing capacitor plates used to measure pressure.
Figure 8 is a schematic diagram of circuitry to reduce the effects of stray capacitance in accordance with the invention.
DETAILED ~ESCRIPTION OF THE PREFERRED EMBODIMENTS
The pressure sensor layers of the present invention are made using batch fabrication techniques.
A silicon wafer or layer is etched in a conventional manner to form the desired features and is then formed into a sandwich construction with additional layers of suitable material to form the sensor. Such sensors are described in the U.S. Patent Application entitled SUSPENDED DIAPHRAGM PRESSURE SENSOR filed September 20, 1993, and assigned to the same assignee as the present application, which is hereby incorporated by reference.
Forming a pressure sensor using semiconductor materials often results in stray capacitance which can cause errors in pressure measurement. The capacitance arises because semiconductors are partial conductors and are able to act as the plates of a capacitor. Thus, a stray capacitance arises between the capacitor plate used to measure pressure and the surrounding semiconductor (a guard plate).
Figure 1 is a perspective fragmentary view of suspended diaphragm pressure sensor 10. Suspended diaphragm pressure sensor 10 includes lower substrate 12 and upper substrate 14. Lower diaphragm substrate 16 is bonded to upper substrate 14. Lower diaphragm substrate 16 and upper diaphragm substrate 18 are bonded together.
Lower diaphragm substrate 16 carries channel 20 and electrical contacts 22 and 24. Pressure inlet 26 W095/08752 PCT~S91~ 95 ~ 69~3 -4-extends through upper substrate 14. Upper diaphragm substrate 18 includes upper diaphragm 28 carried by support tab 30.
Figure 2 is a cross-sectional view of suspended diaphragm pressure sensor 10 taken along the line labeled 2-2 in Figure 1. Figure 3 is a cross-sectional view of suspended diaphragm pressure sensor 10 taken along the line labeled 3-3 in Figure 1. Figures 2 and 3 show lower diaphragm 32 coupled to upper diaphragm 28. Upper diaphragm 28 and lower diaphragm 32 form a diaphragm assembly having diaphragm cavity 34 which typically containing a reference pressure applied through channel 20. Upper and lower diaphragms 28 and 32 are joined along their rims. Upper diaphragm 28 and lower diaphragm 32 are suspended in pressure input cavity 36 which is coupled to pressure inlet 26.
In operation, suspended diaphragm pressure sensor is used to sense the difference in pressure between cavity 34 and cavity 36. Diaphragm cavity 34 expands and contracts inside pressure input cavity 36 in response to pressure applied through pressure inlet 26.
This causes upper diaphragm 28 and lower diaphragm 32 to bend inward into diaphragm cavity 34 or to deflect outward away from diaphragm cavity 34. Fluid flows into cavity 34 or out of cavity 34 via channel 20 which extends through tab 30. Deflection of diaphragms 28 and 32 (and therefore applied pressure) is detected with electrical contacts 22 and 24. These contacts are coupled to sensors carried on diaphragms 28 and 32. In one embodiment, these sensors are capacitive plates or metallizations. Diaphragm 28 carries a capacitive plate and diaphragm 32 carries a capacitive plate. The capacitance between these two plates changes as they are W095l08752 2 1 6 9823 pcT~s~1~usl9s displaced due to applied pressure through inlet 26. In another embodiment, electrical contacts 22 and 24 are coupled to a strain gage on a diaphragm which changes resistance as diaphragms 28 and 32 are deformed.
In a preferred embodiment, suspended diaphragm pressure sensor lO is formed of brittle materials such as single crystal silicon or sapphire materials and batch fabricated. These materials provide improved accuracy because of reduced hysteresis and improved dimension stability. Furthermore, materials such as silicon, ceramic and glass, are easily batch fabricated using known fabrication techniques.
Figure 4 is a perspective cross-sectional view of suspended diaphragm differential pressure sensor 40 in accordance with the present invention. Sensor 40 is formed by placing a pair of pressure sensors similar to pressure sensor lO, shown in Figure l, together having a channel (not shown in Figure 4) such as channel 20 in Figure l extending between the diaphragm assemblies.
Differential pressure sensor 40 includes lower substrate 42, upper substrate 44, lower diaphragm substrate 46 and upper diaphragm substrate 48.
Differential pressure is applied via pressure inlets 50A
and 50B. Pressure inlets 50A and 50B are coupled to diaphragm assemblies 54A and ~4B, respectively.
Diaphragm assembly 54A includes upper diaphragm 58A and lower diaphragm 60A which form diaphragm cavity 62A.
Diaphragm cavity 62A is carried in pressure inlet cavity 64A which is coupled to pressure inlet 50A. The structure of diaphragm assembly 54B is similar to that of diaphragm assembly 54A.
In differential pressure sensor 40, diaphragm cavity 62A is coupled to diaphragm cavity 62B through a wo ss,-as7s2 PCT/US~J'l0329S
2~ 6q~3 '~
channel not shown in Figure 4 but which is similar to ~ channel 20 shown in Figure 1. The channel connecting cavities 62A and 62B extends through tabs that support diaphragm assemblies 54A and 54B within cavities 64A and 64B, respectively. Cavities 62A and 62B are filled with a sealed-in quantity of a relatively incompressible fluid so that as one cavity expands due to applied pressure the other cavity contracts.
Deflection of the suspended diaphragms in the present invention is related to applied pressure, either differential or absolute. By detecting this deformation, it is possible to determine pressure. This detection can be measured through any suitable means.
In a preferred embodiment, diaphragm deformation is detected by measuring the change in capacitance between two plates of a capacitor, one carried on each of the diaphragms. Figure 5 is a cross-sectional view of a suspended diaphragm 108 including upper diaphragm 110 and lower diaphragm 112 which carry upper capacitive plate 114 and lower capacitive plate 116, respectively.
Plates 114 and 116 are mounted to diaphragms 110 and 112 through insulating layers 118 and 120, respectively.
The region between diaphragms 110 and 112 form cavity 122 which is preferably oil filled.
Figure 5 shows capacitance CA which is the capacitance between plates 114 and 116. The value of capacitance CA is related to the pressure applied to suspended diaphragm 108. Therefore, by measuring this capacitance, pressure can be determined. However, stray capacitance CSl and CS2 interfere with this measurement.
This capacitance is due to the capacitance between plate 114 and diaphragm 110, and plate 116 and diaphragm 112, respectively. This capacitance arises because ~wogs/~N7s2 _7_ PCT~594/o9~ss insulation layers 118 and 120 separate plates 114 and 116 from diaphragms 110 and 112, respectively.
Therefore, it i8 desirable to eliminate the stray capacitance from the measurement of CA.
Figure 6 shows simplified circuitry 124 to eliminate interference in the measurement of CA due to CS1 and CS2. Circuitry 124 includes square wave driver 130 coupled to a driven side of capacitor CA. One side of capacitor CS1 (i.e. substrate 110) is coupled to electrical ground as is one side of CS2 (i.e. substrate 112). A sense side of capacitor CA is coupled to the positive input of opamp 132. Opamp 132 is connected with negative feedback through integrating capacitor 136. The non-inverting input to opamp 132 provides a virtual ground. The output of opamp 132 is provided to capacitive measurement circuitry which is used to calculate pressure.
Circuitry 124 keeps substrate 110 and substrate 112 at the "same potential" as the sense electrode 116. This is because sense electrode 116 is held at virtual ground by opamp 132 having negative feedback. This reduces the errors in pressure measurements due to stray capacitance because CS2 is not measured by the circuitry connected to electrode 116.
Figure 7 is a cross-sectional view of diaphragm assemblies 54A and 54B showing capacitor plates used to measure pressure. The capacitor plates are connected to contacts A, B, C and D. Diaphragm assemblies 54A and 54B are connected to electrical contact E.
Figure 8 is a schematic diagram of circuitry 140 to reduce the effects of stray capacitance with the invention. Circuit 140 shows capacitors C1 and C2 whose -WO 9~/08752 PCTfUS91J'~295 ~ ~ ~o9 ~3 capacitance varies in response to a differential pressure between diaphragm assemblies 54A and 54B.
Associated with capacitor Cl are stray capacitors CSll and CS12. Associated with capacitor C2 are stray capacitors CS21 and CS22. These capacitors arise due to surrounding semiconductor material. Figure 8 shows electrical contacts A, B, C, D and E, also shown in Figure 7. Contacts A and D are coupled together. This coupling can be done externally or directly on pressure sensor 40 to reduce the number of electrical contacts to pressure sensor 40.
Circuit 140 includes operational amplifier 122 connected to Schmitt trigger 144. Operational amplifier 142 has negative feedback through integrating capacitor C~. The output of Schmitt trigger 144 is coupled to digital logic 146. Power supply +VR and _VR are connected to electrode E and to electrodes A and D
through switches SW6 and SW5, respectively. Electrode B is connected to operational amplifier 142 through switch SWl and electrode C is connected to operational amplifier SW2 through switch SW4. Electrode E is connected to the noninverting input of operational amplifier 142, and electrodes B and C are connected to electrode E through switches SW2 and SW3, respectively.
Switches SWl through SW6 are connected to digital logic 146 which controls switches SWl through SW6.
In operation, operational amplifier 122 provides an output related to the difference in capacitance between capacitors Cl and C2 which is related to differential pressure sensed by sensor 40.
This is a technique for measuring capacitance which is described in U.S. Patent No. 5,083,091 entitled CHARGED
BALANCED FEEDBACK MEASUREMENT CIRCUIT to Frick et al.
W095/0875X 2 1 6 9 8 2 3 PCT~S94/0929S
_g _ Opamp 142 maintains the sense electrodes on capacitors C1 and C2 at a virtual potential, in one embodiment virtual ground. After charge has been distributed, no charge will flow from CS11, CS12, CS21 or CS22 and these capacitances will not enter the measurement. The circuit must drive CS1 and CS22 from the +VR and the _VR power supplies.
The charging current is:
ICh~ng FeXC1t~t1On X (VR-(-V~ )x( CS11 +CS22) With typical values, this current may be on the order of 0.07 ma. (CS11 and CS22 are on the order of 200 x 10-l2 Farads.) This current is compatible with 4-20 ma current loops since the charging current is much less than the ~;n;m~lm available current, 4 ma.
The circuit maintains electrodes B and C at the same potential as electrode E at the time when the charge transfer is complete and the capacitance measurement is taken. This is because the output o~ the integrator formed by opamp 122 is sampled at the point when the charge transfer is completed.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. For example, the invention can be used with other types of sensors and sensor designs where stray capacitance is a problem.
Sl~BSTlTUTE SHEET (RULE 26)
Claims (7)
1. A sensing circuit, comprising:
a variable sensing capacitor having first and second capacitor plates with a capacitance between the plates which varies as a function of a sensed parameter, each of the capacitor plates having stray capacitance relative to guard plates arranged around the first and second capacitor plates;
a source of reference potential;
a drive circuit providing a drive potential to the first capacitor plate which alternates relative to the reference potential;
a sensing circuit connected to the reference potential and generating a virtual reference potential substantially equal to the reference potential; and switching circuitry connected to the second capacitor plate and connecting the second capacitor plate alternately to the reference potential and the virtual reference potential such that there is substantially no potential difference between the second capacitor plate and the guard plates.
a variable sensing capacitor having first and second capacitor plates with a capacitance between the plates which varies as a function of a sensed parameter, each of the capacitor plates having stray capacitance relative to guard plates arranged around the first and second capacitor plates;
a source of reference potential;
a drive circuit providing a drive potential to the first capacitor plate which alternates relative to the reference potential;
a sensing circuit connected to the reference potential and generating a virtual reference potential substantially equal to the reference potential; and switching circuitry connected to the second capacitor plate and connecting the second capacitor plate alternately to the reference potential and the virtual reference potential such that there is substantially no potential difference between the second capacitor plate and the guard plates.
2. The sensing circuit of claim 1 wherein the guards are formed of semiconductor material.
3. The sensing circuit of claim 1 wherein the virtual reference potential is an operational amplifier having negative feedback through an integrating capacitor.
4. The sensing circuit of claim 1 wherein the sensed parameter is pressure.
5. A pressure measurement circuit for providing a Pressure measurement output as a function of a pressure, comprising:
a sense capacitor having a driven plate and a sense plate with a capacitance between the plates which varies as a function of the pressure;
a stray capacitance between the sense plate and a stray capacitance plate;
a reference potential coupled to the stray capacitance plate;
virtual reference circuitry coupled to the reference potential, having a virtual reference potential output substantially equal to the reference potential, and an output related to capacitance of the sense capacitor;
charge sensing circuitry connected to the sense plate and sensing charge carried on the sense plate and maintaining the sense plate at substantially the same potential as the stray capacitance plate whereby the stray capacitance is substantially eliminated from measurements of the sense capacitor; and output circuitry providing the pressure measurement output based upon sensed charge.
a sense capacitor having a driven plate and a sense plate with a capacitance between the plates which varies as a function of the pressure;
a stray capacitance between the sense plate and a stray capacitance plate;
a reference potential coupled to the stray capacitance plate;
virtual reference circuitry coupled to the reference potential, having a virtual reference potential output substantially equal to the reference potential, and an output related to capacitance of the sense capacitor;
charge sensing circuitry connected to the sense plate and sensing charge carried on the sense plate and maintaining the sense plate at substantially the same potential as the stray capacitance plate whereby the stray capacitance is substantially eliminated from measurements of the sense capacitor; and output circuitry providing the pressure measurement output based upon sensed charge.
6. The pressure measurement circuit of claim 5 wherein the stray capacitance plate is formed of semiconductor material.
7. The pressure measurement circuit of claim 5 wherein the virtual reference potential is an operational amplifier having negative feedback through an integrating capacitor.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/126,364 | 1993-09-24 | ||
US08/126,364 US5424650A (en) | 1993-09-24 | 1993-09-24 | Capacitive pressure sensor having circuitry for eliminating stray capacitance |
Publications (1)
Publication Number | Publication Date |
---|---|
CA2169823A1 true CA2169823A1 (en) | 1995-03-30 |
Family
ID=22424428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002169823A Abandoned CA2169823A1 (en) | 1993-09-24 | 1994-08-15 | Screened capacitive sensor |
Country Status (9)
Country | Link |
---|---|
US (1) | US5424650A (en) |
EP (1) | EP0740777B1 (en) |
JP (1) | JP3448060B2 (en) |
CN (1) | CN1131983A (en) |
CA (1) | CA2169823A1 (en) |
DE (1) | DE69423004T2 (en) |
RU (1) | RU2144680C1 (en) |
SG (1) | SG67884A1 (en) |
WO (1) | WO1995008752A2 (en) |
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-
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- 1994-08-15 CA CA002169823A patent/CA2169823A1/en not_active Abandoned
- 1994-08-15 DE DE69423004T patent/DE69423004T2/en not_active Expired - Lifetime
- 1994-08-15 CN CN94193515.9A patent/CN1131983A/en active Pending
- 1994-08-15 SG SG1996001663A patent/SG67884A1/en unknown
- 1994-08-15 RU RU96107790A patent/RU2144680C1/en active
- 1994-08-15 JP JP50975695A patent/JP3448060B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
RU2144680C1 (en) | 2000-01-20 |
WO1995008752A3 (en) | 1995-06-01 |
SG67884A1 (en) | 1999-10-19 |
EP0740777B1 (en) | 2000-02-09 |
JPH09503294A (en) | 1997-03-31 |
EP0740777A1 (en) | 1996-11-06 |
JP3448060B2 (en) | 2003-09-16 |
WO1995008752A2 (en) | 1995-03-30 |
DE69423004T2 (en) | 2000-09-14 |
US5424650A (en) | 1995-06-13 |
DE69423004D1 (en) | 2000-03-16 |
CN1131983A (en) | 1996-09-25 |
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