CA2171188A1 - Resonant guage with microbeam driven in constant electric field - Google Patents

Resonant guage with microbeam driven in constant electric field

Info

Publication number
CA2171188A1
CA2171188A1 CA002171188A CA2171188A CA2171188A1 CA 2171188 A1 CA2171188 A1 CA 2171188A1 CA 002171188 A CA002171188 A CA 002171188A CA 2171188 A CA2171188 A CA 2171188A CA 2171188 A1 CA2171188 A1 CA 2171188A1
Authority
CA
Canada
Prior art keywords
piezoresistor
electrode
drive electrode
resonant
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002171188A
Other languages
French (fr)
Other versions
CA2171188C (en
Inventor
James David Zook
David William Burns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
James David Zook
David William Burns
Honeywell Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by James David Zook, David William Burns, Honeywell Inc. filed Critical James David Zook
Publication of CA2171188A1 publication Critical patent/CA2171188A1/en
Application granted granted Critical
Publication of CA2171188C publication Critical patent/CA2171188C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/01—Vibration

Abstract

A resonant strain gauge includes a beam attached at both ends to a substrate. A cover cooperating with the substrate encloses the beam within a sealed vacuum chamber. A first bias electrode is formed on the cover and a second bias electrode is formed on the substrate directly beneath and spaced apart from the beam. The first and second electrodes are biased at constant voltage levels of equal magnitude and opposite polarity. A drive electrode is formed on the beam at one end of the beam. A piezoresistor is formed on the other end of the beam. A shield electrode is located between the drive electrode and the piezoresistor. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage to cause mechanical oscillation of the beam. The piezoresistor detects the position of the beam. Beneficially, the piezoresistor detects the position of the beam with the use of a linear force applied to the drive electrode and with minimal impact from parasitic capacitance.
CA002171188A 1992-08-31 1993-09-07 Resonant guage with microbeam driven in constant electric field Expired - Fee Related CA2171188C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/937,068 US5275055A (en) 1992-08-31 1992-08-31 Resonant gauge with microbeam driven in constant electric field
PCT/US1993/008404 WO1995007448A1 (en) 1992-08-31 1993-09-07 Resonant gauge with microbeam driven in constant electric field

Publications (2)

Publication Number Publication Date
CA2171188A1 true CA2171188A1 (en) 1995-03-16
CA2171188C CA2171188C (en) 2006-04-18

Family

ID=47915796

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002171188A Expired - Fee Related CA2171188C (en) 1992-08-31 1993-09-07 Resonant guage with microbeam driven in constant electric field

Country Status (7)

Country Link
US (1) US5275055A (en)
EP (1) EP0717835B1 (en)
JP (2) JP3223358B2 (en)
AU (1) AU683850B2 (en)
CA (1) CA2171188C (en)
DE (1) DE69328500T2 (en)
WO (1) WO1995007448A1 (en)

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US5458000A (en) * 1993-07-20 1995-10-17 Honeywell Inc. Static pressure compensation of resonant integrated microbeam sensors
US5417115A (en) * 1993-07-23 1995-05-23 Honeywell Inc. Dielectrically isolated resonant microsensors
US5442962A (en) * 1993-08-20 1995-08-22 Setra Systems, Inc. Capacitive pressure sensor having a pedestal supported electrode
US5550516A (en) * 1994-12-16 1996-08-27 Honeywell Inc. Integrated resonant microbeam sensor and transistor oscillator
US5742222A (en) * 1995-05-26 1998-04-21 Avi Systems, Inc. Direct adhering polysilicon based strain gage
GB2301669B (en) * 1995-05-30 1999-11-10 Allied Signal Inc Angular rate sensor misalignment correction
GB2301671B (en) * 1995-05-30 1999-10-13 Allied Signal Inc Angular rate sensor electronic balance
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
EP0753728A3 (en) * 1995-07-14 1998-04-15 Yokogawa Electric Corporation Semiconductor differential pressure measuring device
US5798502A (en) * 1996-05-10 1998-08-25 Oak Frequency Temperature controlled substrate for VLSI construction having minimal parasitic feedback
US5772322A (en) * 1996-05-31 1998-06-30 Honeywell Inc. Resonant microbeam temperature sensor
IT1287123B1 (en) * 1996-10-31 1998-08-04 Abb Kent Taylor Spa DEVICE FOR MEASURING A PRESSURE
US20040099061A1 (en) 1997-12-22 2004-05-27 Mks Instruments Pressure sensor for detecting small pressure differences and low pressures
US6126311A (en) * 1998-11-02 2000-10-03 Claud S. Gordon Company Dew point sensor using mems
US6215221B1 (en) * 1998-12-29 2001-04-10 Honeywell International Inc. Electrostatic/pneumatic actuators for active surfaces
US6698295B1 (en) 2000-03-31 2004-03-02 Shipley Company, L.L.C. Microstructures comprising silicon nitride layer and thin conductive polysilicon layer
US7026697B2 (en) * 2000-03-31 2006-04-11 Shipley Company, L.L.C. Microstructures comprising a dielectric layer and a thin conductive layer
EP1164378B1 (en) * 2000-06-16 2012-03-14 Infineon Technologies AG Acceleration Sensor
IT1318295B1 (en) 2000-07-31 2003-07-28 Abb Ricerca Spa DEVICE FOR MEASURING THE PRESSURE OF A FLUID
US6584857B1 (en) 2000-11-20 2003-07-01 Eastman Kodak Company Optical strain gauge
US6487913B2 (en) 2000-12-18 2002-12-03 Eastman Kodak Company Strain gauge with resonant light modulator
FR2818676B1 (en) * 2000-12-27 2003-03-07 Freyssinet Int Stup METHOD FOR DISASSEMBLING A PRE-STRESS CABLE AND DEVICE FOR IMPLEMENTING THE SAME
US6714102B2 (en) * 2001-03-01 2004-03-30 Agilent Technologies, Inc. Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
US20040036378A1 (en) * 2002-08-20 2004-02-26 Rodgers Murray Steven Dust cover for MEM components
EP1588153B1 (en) * 2002-12-27 2007-10-03 NanoNord A/S A cantilever sensor using both the longitudinal and the transversal piezoresistive coefficients
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
US6993973B2 (en) * 2003-05-16 2006-02-07 Mks Instruments, Inc. Contaminant deposition control baffle for a capacitive pressure transducer
US7188511B2 (en) * 2004-06-11 2007-03-13 Robert Bosch Gmbh Stress wave sensor
US7231803B2 (en) * 2004-06-11 2007-06-19 Robert Bosch Gmbh Hybrid impact sensor
US7623142B2 (en) 2004-09-14 2009-11-24 Hewlett-Packard Development Company, L.P. Flexure
US7201057B2 (en) * 2004-09-30 2007-04-10 Mks Instruments, Inc. High-temperature reduced size manometer
US7141447B2 (en) * 2004-10-07 2006-11-28 Mks Instruments, Inc. Method of forming a seal between a housing and a diaphragm of a capacitance sensor
US7137301B2 (en) * 2004-10-07 2006-11-21 Mks Instruments, Inc. Method and apparatus for forming a reference pressure within a chamber of a capacitance sensor
US7368312B1 (en) * 2004-10-15 2008-05-06 Morgan Research Corporation MEMS sensor suite on a chip
US7443509B1 (en) 2004-12-12 2008-10-28 Burns David W Optical and electronic interface for optically coupled resonators
US7379629B1 (en) 2004-12-12 2008-05-27 Burns David W Optically coupled resonant pressure sensor
US7499604B1 (en) 2004-12-12 2009-03-03 Burns David W Optically coupled resonant pressure sensor and process
US7605391B2 (en) * 2004-12-12 2009-10-20 Burns David W Optically coupled resonator
US7176048B1 (en) 2004-12-12 2007-02-13 Burns David W Optically coupled sealed-cavity resonator and process
US7017418B1 (en) * 2004-12-15 2006-03-28 General Electric Company System and method for sensing pressure
US20060134510A1 (en) * 2004-12-21 2006-06-22 Cleopatra Cabuz Air cell air flow control system and method
US20070017276A1 (en) * 2005-07-20 2007-01-25 Trutna William R Jr Resonant structure humidity sensor
US20070236213A1 (en) * 2006-03-30 2007-10-11 Paden Bradley E Telemetry method and apparatus using magnetically-driven mems resonant structure
FR2919067B1 (en) 2007-07-19 2009-08-28 Sagem Defense Securite METHOD FOR MEASURING ACCELERATION USING A PIEZOELECTRIC VIBRANT ACCELEROMETER AND CORRESPONDING MEASURING DEVICE
US7661313B2 (en) * 2007-11-05 2010-02-16 The United States Of America As Represented By The Secretary Of The Navy Acceleration strain transducer
US8468887B2 (en) * 2008-04-14 2013-06-25 Freescale Semiconductor, Inc. Resonant accelerometer with low sensitivity to package stress
US7589329B1 (en) 2008-04-23 2009-09-15 Honeywell International Inc. Systems and methods for remote optical sensing
US8076737B2 (en) * 2008-05-20 2011-12-13 Honeywell International Inc. Systems and methods for acoustic sensing
US8115573B2 (en) * 2009-05-29 2012-02-14 Infineon Technologies Ag Resonance frequency tunable MEMS device
DE102010030878B4 (en) * 2010-07-02 2023-08-17 Robert Bosch Gmbh Micromechanical sensor device for measuring an acceleration, a pressure and the like
PL2458357T5 (en) * 2010-11-29 2018-03-30 Air Products And Chemicals, Inc. Method of, and Apparatus for, Measuring the Pressure of a Gas
US8650963B2 (en) * 2011-08-15 2014-02-18 Pgs Geophysical As Electrostatically coupled pressure sensor
FR2995995B1 (en) * 2012-09-26 2014-09-19 Sagem Defense Securite PRESSURE SENSOR BASED ON NANOJAUGES COUPLEES WITH A RESONATOR
JP2014115210A (en) * 2012-12-11 2014-06-26 Seiko Epson Corp Mems element, electronic device, altimeter, electronic apparatus and moving body
JP2014115208A (en) * 2012-12-11 2014-06-26 Seiko Epson Corp Mems element, electronic device, altimeter, electronic apparatus and moving body
JP6044607B2 (en) 2014-08-28 2016-12-14 横河電機株式会社 Vibration sensor device
US10580605B2 (en) 2015-11-23 2020-03-03 University Of Utah Research Foundation Very low power microelectromechanical devices for the internet of everything
JP7155035B2 (en) 2019-02-18 2022-10-18 株式会社荏原製作所 Polishing device and polishing method
CN112710869B (en) * 2020-12-09 2023-04-21 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） Harmonic oscillator rigid shaft identification device and method based on additional static stiffness principle

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US3486383A (en) * 1965-01-04 1969-12-30 Singer General Precision Vibrating beam transducer
US3413573A (en) * 1965-06-18 1968-11-26 Westinghouse Electric Corp Microelectronic frequency selective apparatus with vibratory member and means responsive thereto
US3470400A (en) * 1967-12-21 1969-09-30 Singer General Precision Single beam force transducer with integral mounting isolation
CH1494868A4 (en) * 1968-10-08 1971-03-15 Proctor Ets
US3657667A (en) * 1969-04-23 1972-04-18 Citizen Watch Co Ltd Oscillator with three-arm mechanical vibrator connected to suppress spurious vibrations
DE8712331U1 (en) * 1986-09-26 1988-01-28 Flowtec Ag, Reinach, Basel, Ch
US4901586A (en) * 1989-02-27 1990-02-20 Sundstrand Data Control, Inc. Electrostatically driven dual vibrating beam force transducer
US5090254A (en) * 1990-04-11 1992-02-25 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers

Also Published As

Publication number Publication date
CA2171188C (en) 2006-04-18
JPH09502274A (en) 1997-03-04
JP3223358B2 (en) 2001-10-29
US5275055A (en) 1994-01-04
EP0717835B1 (en) 2000-04-26
DE69328500D1 (en) 2000-05-31
AU683850B2 (en) 1997-11-27
AU4850293A (en) 1995-03-27
DE69328500T2 (en) 2000-09-21
EP0717835A1 (en) 1996-06-26
WO1995007448A1 (en) 1995-03-16

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