CA2178390A1 - Imager device with integral address line repair segments - Google Patents

Imager device with integral address line repair segments

Info

Publication number
CA2178390A1
CA2178390A1 CA002178390A CA2178390A CA2178390A1 CA 2178390 A1 CA2178390 A1 CA 2178390A1 CA 002178390 A CA002178390 A CA 002178390A CA 2178390 A CA2178390 A CA 2178390A CA 2178390 A1 CA2178390 A1 CA 2178390A1
Authority
CA
Canada
Prior art keywords
address line
repair
integral
address
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002178390A
Other languages
French (fr)
Other versions
CA2178390C (en
Inventor
Roger Stephen Salisbury
Ching-Yeu Wei
Robert Forrest Kwasnick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CA2178390A1 publication Critical patent/CA2178390A1/en
Application granted granted Critical
Publication of CA2178390C publication Critical patent/CA2178390C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Abstract

An imager array data line repair structure for use in high performance imager arrays includes a first and a second plurality of address lines that are disposed in respective layers with an intermediate layer having at least one insulative material disposed therebetween. The imager device further includes at least one integral address line repair segment that is disposed in the same layer as the first address lines and that is electrically isolated from the first address lines; the integral address line repair segment is disposed so as to underlie a repair portion of the second address line, with the intermediate layer disposed therebetween, and has a width substantially the same as the overlying second address line. In initial fabrication, the integral address line repair segment is electrically isolated from the overlying repair segment of the second address line; in the event a repair has been effected, the repair portion of the second address line is electrically coupled to the underlying integral address line repair segment through laser welds.
CA002178390A 1995-06-21 1996-06-06 Imager device with integral address line repair segments Expired - Fee Related CA2178390C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/493,021 1995-06-21
US08/493,021 US5552607A (en) 1995-06-21 1995-06-21 Imager device with integral address line repair segments

Publications (2)

Publication Number Publication Date
CA2178390A1 true CA2178390A1 (en) 1996-12-22
CA2178390C CA2178390C (en) 2004-02-10

Family

ID=23958576

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002178390A Expired - Fee Related CA2178390C (en) 1995-06-21 1996-06-06 Imager device with integral address line repair segments

Country Status (4)

Country Link
US (1) US5552607A (en)
EP (1) EP0750349A3 (en)
JP (1) JPH09148552A (en)
CA (1) CA2178390C (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834321A (en) * 1995-12-18 1998-11-10 General Electric Company Low noise address line repair method for thin film imager devices
US5608245A (en) * 1995-12-21 1997-03-04 Xerox Corporation Array on substrate with repair line crossing lines in the array
US5616524A (en) * 1995-12-22 1997-04-01 General Electric Company Repair method for low noise metal lines in thin film imager devices
GB2318448B (en) * 1996-10-18 2002-01-16 Simage Oy Imaging detector and method of production
US5976978A (en) * 1997-12-22 1999-11-02 General Electric Company Process for repairing data transmission lines of imagers
JP2000046645A (en) * 1998-07-31 2000-02-18 Canon Inc Photoelectric conversion device and its manufacture and x-ray image pick-up device
JP2001343667A (en) * 2000-03-29 2001-12-14 Sharp Corp Display device and its defect correcting method
KR100382456B1 (en) * 2000-05-01 2003-05-01 엘지.필립스 엘시디 주식회사 method for forming Repair pattern of liquid crystal display
KR100715904B1 (en) * 2000-05-10 2007-05-08 엘지.필립스 엘시디 주식회사 method for fabricating liquid crystal display device
US6956216B2 (en) * 2000-06-15 2005-10-18 Canon Kabushiki Kaisha Semiconductor device, radiation detection device, and radiation detection system
KR20020039090A (en) * 2000-11-20 2002-05-25 주식회사 현대 디스플레이 테크놀로지 Pattern structure of data open repair line of lcd panel
JP2004096079A (en) * 2002-07-11 2004-03-25 Sharp Corp Photoelectric converter, image reader, and manufacturing method of photoelectric converter
US6916670B2 (en) * 2003-02-04 2005-07-12 International Business Machines Corporation Electronic package repair process
KR100960457B1 (en) * 2003-04-28 2010-05-28 엘지디스플레이 주식회사 Liquid crystal display device comprising metal shield line and fabrication method thereof
TWI418883B (en) * 2010-03-17 2013-12-11 Au Optronics Corp Repair method and active device array substrate
US9747834B2 (en) * 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL86162A (en) * 1988-04-25 1991-11-21 Zvi Orbach Customizable semiconductor devices
US4688896A (en) * 1985-03-04 1987-08-25 General Electric Company Information conversion device with auxiliary address lines for enhancing manufacturing yield
FR2585167B1 (en) * 1985-07-19 1993-05-07 Gen Electric REDUNDANT CONDUCTIVE STRUCTURES FOR LIQUID CRYSTAL DISPLAYS CONTROLLED BY THIN FILM FIELD EFFECT TRANSISTORS
JPS63265223A (en) * 1987-04-23 1988-11-01 Alps Electric Co Ltd Thin film transistor array and its production
JPH02157828A (en) * 1988-12-12 1990-06-18 Hosiden Electron Co Ltd Liquid crystal display element
US5062690A (en) * 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
US5303074A (en) * 1991-04-29 1994-04-12 General Electric Company Embedded repair lines for thin film electronic display or imager devices

Also Published As

Publication number Publication date
US5552607A (en) 1996-09-03
CA2178390C (en) 2004-02-10
JPH09148552A (en) 1997-06-06
EP0750349A2 (en) 1996-12-27
EP0750349A3 (en) 1998-07-22

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed
MKLA Lapsed

Effective date: 20070606