CA2211705A1 - Diamond - Google Patents

Diamond

Info

Publication number
CA2211705A1
CA2211705A1 CA002211705A CA2211705A CA2211705A1 CA 2211705 A1 CA2211705 A1 CA 2211705A1 CA 002211705 A CA002211705 A CA 002211705A CA 2211705 A CA2211705 A CA 2211705A CA 2211705 A1 CA2211705 A1 CA 2211705A1
Authority
CA
Canada
Prior art keywords
tension
tensile rupture
600mpa
300mpa
insert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002211705A
Other languages
French (fr)
Other versions
CA2211705C (en
Inventor
John Lloyd Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Pty Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2211705A1 publication Critical patent/CA2211705A1/en
Application granted granted Critical
Publication of CA2211705C publication Critical patent/CA2211705C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T407/00—Cutters, for shaping
    • Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A CVD diamond layer for use as an insert in an abrasive tool characterised by the following features:
(i) the layer contains boron dopant atoms in a concentration of at least 0,05 atomic percent;
(ii) an average tensile rupture strength of at least 600MPa with the nucleation phase in tension, and at least 300MPa with the growth face in tension, both such tensile rupture strengths being measured by a three point bend test on a sample 18mm long, 2mm wide and a thickness of 1,4mm or smaller.
CA002211705A 1996-07-31 1997-07-28 Diamond Expired - Fee Related CA2211705C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9616043.7 1996-07-31
GBGB9616043.7A GB9616043D0 (en) 1996-07-31 1996-07-31 Diamond

Publications (2)

Publication Number Publication Date
CA2211705A1 true CA2211705A1 (en) 1998-01-31
CA2211705C CA2211705C (en) 2004-04-20

Family

ID=10797775

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002211705A Expired - Fee Related CA2211705C (en) 1996-07-31 1997-07-28 Diamond

Country Status (11)

Country Link
US (1) US5981057A (en)
EP (1) EP0822269B1 (en)
JP (2) JP4588129B2 (en)
KR (1) KR100497693B1 (en)
AT (1) ATE206488T1 (en)
AU (1) AU714582B2 (en)
CA (1) CA2211705C (en)
DE (1) DE69707071T2 (en)
GB (1) GB9616043D0 (en)
TW (1) TW378167B (en)
ZA (1) ZA976542B (en)

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GB9616043D0 (en) * 1996-07-31 1996-09-11 De Beers Ind Diamond Diamond
DE19912721C1 (en) * 1999-03-20 2000-08-10 Simon Karl Gmbh & Co Kg Sintered metal milling disk production process comprises positioning of cutter inserts in metal powder filled in a pressing die cavity
RU2288302C2 (en) 2000-06-15 2006-11-27 Элемент Сикс (Пти) Лтд. Mono-crystal diamond produced by chemical deposition method from gas phase and method of production of such diamond
CN1210445C (en) * 2000-06-15 2005-07-13 六号元素(控股)公司 Method for making thick signal crystal diamond layer and gemstones produced from layer
US6815052B2 (en) * 2000-12-01 2004-11-09 P1 Diamond, Inc. Filled diamond foam material and method for forming same
EP1435271A4 (en) * 2001-08-10 2008-03-26 Sumitomo Electric Industries Ultra high-pressure sintered cutter with recess or groove, holding mechanism for the cutter, and method of manufacturing the cutter
DE10153310A1 (en) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographic structuring process with a carbon hard mask layer produced by a plasma-assisted deposition process with diamond-like hardness
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
US6846341B2 (en) * 2002-02-26 2005-01-25 Smith International, Inc. Method of forming cutting elements
EP1602478B1 (en) * 2002-02-26 2009-10-14 Smith International, Inc. Cutting element including semiconductive polycrystalline diamond
JP2003321296A (en) * 2002-04-25 2003-11-11 Shin Etsu Chem Co Ltd Diamond film and method for producing the same
US7595110B2 (en) * 2003-10-08 2009-09-29 Frushour Robert H Polycrystalline diamond composite
US7517588B2 (en) * 2003-10-08 2009-04-14 Frushour Robert H High abrasion resistant polycrystalline diamond composite
JP2006150572A (en) * 2004-12-01 2006-06-15 Osg Corp Boron doped diamond coating film, and diamond coated cutting tool
JP2006152424A (en) * 2004-12-01 2006-06-15 Osg Corp Hard film, and hard film-coated cutting tool
US20090297429A1 (en) * 2006-01-04 2009-12-03 Vohra Yogesh K High growth rate methods of producing high-quality diamonds
US8273225B2 (en) 2006-09-05 2012-09-25 Element Six Limited Solid electrode
GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
GB0622483D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Electrochemical apparatus having a forced flow arrangement
GB0716268D0 (en) * 2007-08-21 2007-09-26 Reedhycalog Uk Ltd PDC cutter with stress diffusing structures
DE202007011816U1 (en) * 2007-08-24 2007-12-20 Jakob Lach Gmbh & Co. Kg Monoblock milling cutter
JP5539968B2 (en) * 2008-05-05 2014-07-02 カーネギー インスチチューション オブ ワシントン Super tough single crystal boron doped diamond
JP5261690B2 (en) * 2008-05-20 2013-08-14 貞雄 竹内 High-strength diamond film tool
JP5165484B2 (en) * 2008-07-16 2013-03-21 ユニタック株式会社 Drill head manufacturing method and drill head
US8342780B2 (en) * 2008-10-17 2013-01-01 Precorp, Inc. Shielded PCD or PCBN cutting tools
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
GB2467570B (en) * 2009-02-09 2012-09-19 Reedhycalog Uk Ltd Cutting element
KR20120016255A (en) * 2009-04-28 2012-02-23 다이아몬드 이노베이션즈, 인크. Method to attach or improve the attachment of articles
US8945720B2 (en) * 2009-08-06 2015-02-03 National Oilwell Varco, L.P. Hard composite with deformable constituent and method of applying to earth-engaging tool
US10258959B2 (en) * 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US8919463B2 (en) 2010-10-25 2014-12-30 National Oilwell DHT, L.P. Polycrystalline diamond cutting element
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
JP5913362B2 (en) 2010-12-23 2016-04-27 エレメント シックス リミテッド Controlling the doping of synthetic diamond materials
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
US8741010B2 (en) 2011-04-28 2014-06-03 Robert Frushour Method for making low stress PDC
US8858665B2 (en) 2011-04-28 2014-10-14 Robert Frushour Method for making fine diamond PDC
US8974559B2 (en) 2011-05-12 2015-03-10 Robert Frushour PDC made with low melting point catalyst
US9061264B2 (en) 2011-05-19 2015-06-23 Robert H. Frushour High abrasion low stress PDC
US8828110B2 (en) 2011-05-20 2014-09-09 Robert Frushour ADNR composite
US20140341664A1 (en) * 2012-01-10 2014-11-20 Sumitomo Electric Hardmetal Corp. Diamond coated tool
JP2012232898A (en) * 2012-08-17 2012-11-29 Sadao Takeuchi Tool with high strength diamond film
JP6076775B2 (en) * 2013-02-27 2017-02-08 三星ダイヤモンド工業株式会社 Scribing wheel, holder unit, scribing device, and method for manufacturing scribing wheel
CN104400028A (en) * 2014-11-06 2015-03-11 成都迅德科技有限公司 Cutting tool for numerical control equipment
CN108602699B (en) 2016-02-05 2021-04-27 西门子能源美国公司 Electrooxidation at elevated pressure
CN114555857B (en) * 2019-10-18 2024-01-09 住友电工硬质合金株式会社 Diamond cladding tool

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Also Published As

Publication number Publication date
JP2009039856A (en) 2009-02-26
CA2211705C (en) 2004-04-20
ZA976542B (en) 1998-04-01
DE69707071D1 (en) 2001-11-08
JP4588129B2 (en) 2010-11-24
TW378167B (en) 2000-01-01
DE69707071T2 (en) 2002-03-07
AU2943097A (en) 1998-02-05
GB9616043D0 (en) 1996-09-11
ATE206488T1 (en) 2001-10-15
EP0822269B1 (en) 2001-10-04
AU714582B2 (en) 2000-01-06
KR100497693B1 (en) 2005-09-08
KR980009531A (en) 1998-04-30
JPH10146703A (en) 1998-06-02
EP0822269A1 (en) 1998-02-04
US5981057A (en) 1999-11-09

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Legal Events

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EEER Examination request
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