CA2212384A1 - Pressure sensors and pressure transmitters - Google Patents
Pressure sensors and pressure transmittersInfo
- Publication number
- CA2212384A1 CA2212384A1 CA002212384A CA2212384A CA2212384A1 CA 2212384 A1 CA2212384 A1 CA 2212384A1 CA 002212384 A CA002212384 A CA 002212384A CA 2212384 A CA2212384 A CA 2212384A CA 2212384 A1 CA2212384 A1 CA 2212384A1
- Authority
- CA
- Canada
- Prior art keywords
- pressure
- transmitter
- sensor
- pressure responsive
- responsive structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
- G01L9/125—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor with temperature compensating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49139—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture
- Y10T29/4914—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal
- Y10T29/49142—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal including metal fusion
Abstract
First capacitance pressure sensor (70A, B) has a fusion bonded single crystal structure (sapphire with cavity). Second one (70A, B) has an elongated and thick single crystal structure. Third one (70A, B) uses the electric field emanating from the back sides of the capacitor plates. First differential pressure transmitter uses a process barrier (71) and an elongated member as a sensor (70A, B). Second differential pressure transmitter uses single crystal structures with stress isolation members as sensors (70A, B). Basically thick slab cavity capacitance sapphire sensors are directly exposed to a process fluid. Slab: 15x3x2 cubic mm, cavity cross section: 1mm x 0.5 micro m, capacitance: 42 pF.
Description
W096n7123 PCTrUS96/0252 PRESSURE SENSORS AND PRESSURE TRANSMITTERS
BACKGROUn~D OF THE IN~JENTION
The present invention relates to the process control industry. In particular, the invention relates S to a pressure sensor in a pressure transmitter.
Pressure transmitters in process applications measure pressure of a process and responsively co~l-n; cate the information over a two-wire proce~s applicatio~ loop, ~or example a 4-20 mA current loop.
Pressure s~nsors in transmitters typically comprise some type o~ a pressure responsive structure which has a def~ectable ~i~phrclgm that moves in response to appiied pressure. These structures can be used to measure both absolute and di~felential pressure. As used herein, a differential pressure sensor is a sensor which measures a relatively small pressure di~ferential (such as that generated across an orifice in a flow tube or between two different heights in a fluid filled container) over a relatively wide absolute pressure range. In a typical prior art transmittcr, to measure differential pressure, two dif~erent pressures are applied to opposing sides of the structure causing a relative deformation in the structure which is measured. Measurement of the de~ormation, for example, can be by measuring a change in electrical capacitance due to movement of capacitor plates carried on the structure or by change in resistance of a resistive strain gauge.
Highly accurate absolute pressure sensors have been desired. Howeuer, it has been difficult to obtain an absolute pressure sensor which can deliver an accurate output over a wide pressure range, from 0.4 psi to 4000 psi for example. It would also be desirable to measure differentiaLpressure with two absolute pressure sensors because this is mechanically much simpler than W O96J27123 PCTrUS96102522 it is to mechanically couple two pressures to a differential pressure sensor. Additionally, an over-pressure in a such a di~erential pressure sensor can damage the differential pressure sensor.
~owever, it has been difficult to obtain absol~te pressure sensors with sufficient accuracy to allow differential pressures in the 0.4 psi to 40 psi range to be measured in a device which must withstand static or line pressure extremes of as much as 4000 psia. For example, 0.01% of 4 psid requires 0.00001% of 4000 psia (10-7 or ().1 ppm).
Typical known pressure sensors used in process applications have unit-to-unit variations in sensitivity to sense~ pressure as well as unit-to-unit variations in undesired responses to extraneous parameters such as temperature. This can be a particular problem when the outputs of two absolute or gauge pressure sensors are combined to provide an output representing differential pressure or when the sensor is used over a large pressure range. Additionally, mechanical stress associated with mounting the sensor to the pressure transmitter result:s in relatively large errors in pressure measurement.
SU~ARY OF THE IN~nENTION
A pressure transmitter in a process control application for transmitting pressure on a process control loop inclucles an absolute pressure sensor. ~he absolute pressure sensor has a cavity therein in which cavity walls defori~ or are placed under stress as the walls respond to applied pressure. The pressure sensor includes a support structure which provides stress isolation. A sensor coupled to the cavity walls provides a pressure related output signal. In one embodimentr the sensor and support structure are W O96/27123 PCTrUS~G~25~2 integral with one another such that there are no joints between the sensor structure and the support structure.
The material and dimensions of the pressure sensor are selected such that the pressure related signal is very accurate and may be used over a wide pressure range or in pair~ as differential pressure sensors.
BRIEF DE~SCRIPTION OF THE DRAWINGS
Figure 1 is a cross-sectional view of a pressure transmitter.
Figure 2 is a cut-away perspective view of an -insert which carries a pressure sensor.
Figure 3 is a cross-sectional perspective view o~ a pressure sensor.
Figure 4 is a graph which illustrates operation of the present invention.
Figure 4A is a graph of stress attenuation versus I./W for a pressure sensor.
Figure 5 is a displacement plot of one-quarter of a pressure sensor where Q/T equals 1Ø
' Figure 6 is a cross sectional view of another embodiment of the pressure sensor.
Figure 7 is a cross-sectional view of a pressure sensor.
Figure 8 is a cross-sectional view of the pressure sensor of Figure 7.
Figure 9 is a top plan view of a top substrate of the pressure sensor of Figure 7.
Figure :L0 is a top plan view of a bottom substrate of the plressure sensor of Figure 7.
Figure 11 is a schematic diagram of circuitry for measuring capacitance of a pressure sensor.
Figure 12 is a cross-sectional view of a sensor body.
WO 961?7~23 PCI~/US9~102522 Figure 13 i5 a bottom plan view of the sensor body of Figure 12.
Figure 14 is a cross-sectional view of a sensor body.
Figure 1.5 is a bottom plan view of the sensor body of Figure 14.
Figures 16A through 16G show cross-sectional views o:E various embodiments of the invention.
Figures 17A and 17B show two embodiments of capacitor plates.
Figure 18 is a graph of bonding temperature as a percent of melting point temperature versus bonding strength as a percent of material strength.
DETATT.~n DESCRIPTION OF THE PREFERRED EMBODIMENTS
Figure ~. shows pressure transmitter 50 having transmitter body 52, sensor body 54 and ~lange 55.
Sensor body 54 in~cludes pressure sensors 70A and 70B
which measure absolute pressure P1 and absolute pressure P2~ respec:tively,.o~ process ~luid. Transmitter body 52 include.s transmit~er (I/O) circuitry 60 which sends information related to pressures P1 and P2 over a two-wire process control loop, such as a 4-20 mA current loop. Circuit boa.rd 57 couples sensor circuit board 58 to sensors 70A and 70B and receives electrical signals related to pressures P1 and P2. Circuitry on sensor circuit board 58 d!igitizes and processes these signals, and comm-ln; cates pressure information to transmitter circuitry 60 using data bus 62. Inserts 67A and 67B
carry sensors 70A and 70B. A process barrier 71 forms cavity 75 and prevents pressures P1 and P2 from escaping sensor body 54 should insert 67A or 67B fail. Cavity 75 may be a vacuum or filled with an inert gas. Feed-throughs 73A, 73B and 73C provide electrical pathways across barrier 71 between circuit boards 57 and 58.
W O96/27123 PCTnUS96102522 Figure 2 is a cut-away perspective view o~
insert 6;7A which carries sensor 70A. In one embodimen*, insert 70A comprises alumina. Additionally, sensor 70A
should be small relative to housing 54 and positioned relatively close to sensor 70B to reduce thermal variations and thereby improve accuracy. This is achieved because the thermal time constant of the sensor is significantly less than the thermal time constant of the housing to mini~ize temperature gradients within the sensing element.
Figure 3 shows sensor 70A in accordance with on~ en~odiment. S~ensor 70A includes upper substrate 72 and lower subst:rate 74 which form cavity 76 therebetween. Eigure 3 shows overall length L, thickne~;s T, width w, m; n; mllm cavity width w o~ the deflecting structure of the sensing cavity and central deflection y due to applied pressure P.
Typical prior art sensors have a ratio of m~; ~11~ to mi n i r~ll~ pressure range which can be accurately sensed of about 100:1. Thls is primarily limited by non-repeatable errors in the structure and noise. Further, prior art sensors are typically limited by the use of materials with imperfect elasticity, inadequate stress isolation and poor signal-to-noise ratio of the sensing element. For example, metal based pressure sensors have problems with hysteresis, material creep and relaxation. Ceramic based sensors are ~ormed of a matrix of crystals typically bonded with silicon glass and also exhibit these problems. Glass-based sensors are subject to instability due to phase changes ancl viscosity of the glass. It has been recognized that single crystal materials have superior elastic properties and that sensors based on such materials can have improved accuracy. Single crystal diaphragm WO 96~27~23 PCI~/US96/02522 sensors have also been used, however they have typically been placed under high tensile stress due to internal p~essurization. Additionally, this type of sensor typically includes glass or metal structural elements and use;s a low strength bonding material such as glass frit, solder or epoxy. Further, this type of sensor has typically had ;nArle~uate stress isolation.
Additionally, typical prior art sensors have used an oil fill, such as silicon oil, for use with over--pressure pro1_ection me~h~n; 6~ . The oil fill is also used when coupling a corrosion resistant isolation diaphragm to the pressure sensor. These sensors are subject to ~ailure due to loss of fill fluid. Typical prior art isolati~Lg ~i~rh~agms have been form formed in metal cmd are used to keep particles and corrosive materials away ~Erom the pressure sensor. These ~i~phragms must ~e thin in order to m; n; ~; ~e errors, however this makes the diaphragm particularly fragile and limits li~e o~ thLe ~;~ph~agm. Further, different = 20 ~i~phragm materials are required for different applications and there is no metal which can be used universally.
The present disclosure sets forth a pressure sensingi structure formed of a single crystal material.
Joints in the mat~erial are formed using fusion bonding such that they are substantially free of foreign materials which could lead to inaccuracies. The structure may be surrounded by process fluid which applies pressure to the structure. This is possible because!the struct:ure is formed of a corrosion resistant material. The brittle material is deformed by compression whichL provides a higher ratio of working stress--to-error s1_ress and therefore a higher signal-to-noise ratio. This results because brittle materials are W O96127123 PCTnUS96/02522 stronger in comp,ression than in tension. This configuration causes the sensor to be less sensitive to corrosia,n of the outer surface because the output is less dependent on the cube of thickness and more closely linearly related to thickness. Placement of the structure in the process fluid improves relia~ility because the isolaLtion ~;~ph~agms and oil ~ill are elimin~ted. An elon~ated shaft provides stress isolatia,n and is formed of the same single crystal material to help reduce errors. Electrical le~ds are provided through the elongated shaft and isolated from process fluid. A path through the shaft can also be used to apply a re~.erence pressure. In one embodiment, corrosia,n resistant material such as sapphire is used and an internal sen.sor is used which allows the oil fill and iso:Lating ~;~ph~agms to be eliminated. In one embodiment, matched sensors are used as dual sensors to measure~di~ferential pressure, which helps reduce errors common to the two sensors. Capacitance sensing is desirable ~ecause it provides a stable, low noise signal. Capacitor~s have no inherent thermal noise and they have a high ,gauge factor with a correspondingly high output which m;n;m;~es the noise contribution of electronic detection circuitry. They also have excellent zero stability and very low zero temperature coefficients. Thec,e factors make it practical to detect the very low pressure changes in a high pressure sensor that are encountered in a differential pressure transmitter based on two independent sensing elements.
Improved pressure resolution is achieved by use of electronic circuitry.
It is we:Ll known that the deflection y due to bending in a diaphragm is proportional to ( w2) where w W O96~?.7~23 PCTAUS96/025Z2 is the effective m;n;mum width of the diaphragm and T is (Y T2) . The sensor output is therefore highly dependent on dimensional variations.
It is known that deflection due to shear in a diaphra~m proportional to W2/T. (Y~ T ) This reduces the variation in output versus sensor ~imen~ions but this variation can be further reduced by relying on "bulk" deflection as defined below.
The deflectio~ y of cavity 76 will depend on lo the effects of bending deflection, shear deflection and 'bulk" deflection. Assuming that W/w equals a constant which is greater than 2, this can be expressed as follows:
Y ~ Kl P~K2 Plw\+K3Plw~
w ~ IJ~ T~ E\TI Equation 1 where:
Rl = "bulk" deflection constant for material;
K2 = shear deflection constant for material;
R3 = bending deflection constant for material;
W = sensor width;
P = external pressure;
y = central deflection of cavity 76 due to applied pressure P;
w = width of cavity 76;
T = thickness at slot 76 of sensor 70 (for a square cross section, T=W/2);
t = depth of cavity 76;
W O96/27123 PCTnJS96102522 L = sensor length which is much greater than sensor width w and SensQr thickness T;
E = Young's modulus; and G = shear modulus.
Equation 1 illustrates that shear and bending deflection on cavity 76 are dependent on cavity width w and sens,or thickness T.
The term Nbulk" deflection as used herein describes the RIP/E component of Ecluation 1, where y is directly proportional to width w of cavity 76. (y ~ w) Therefore, bulk dLeflection is highly accurate and desirable in dete~n; n; ng pressure and is substantially independent of var:Lations in thickness T such as those which occur with corrosion. One aspect of the present invention includes providing a pressure sensor having ~ nsions such that bulk mode deflection component of total deflection oE the sensor is increased.
Figure 4 is a graph of Equation 1 which shows total de!flection and its individual components: bulk deflection, shear deflection and bending deflection.
When w/T is between 1 and 4, shear deflection pre~sm;n~tes total deflection. As w/T gets smaller, the contribution of shear deflection relative to bulk deflection gets smaller. For w/T less than 1.0, bulk deflection is the pre~c~m;n~nt factor contributing to total deflection of- sensor 70A due to applied pressure.
Thus, one aspect of the invention includes pressure sensors having a ratio of w (cavity width) divided by T
(thickness from an outer surface to an inner surface) of less than or equal to about 1Ø For shear deflection to exceed bending deflection w/T should be less than 4Ø In one embocliment, the ratio of w/T is: 0.05 <
w/T <1Ø The minimllm w/T value is determined by how W O96127123 PCTrUS96102522 t r small w can be practically made and inaccuracies due to the~nal gradients as T is made large.
It is desirable to m;n;~; ze tensile stresses in sensors made of brittle materials because this reduces the possibility of failure due to cracking of the sensor. One aspect o~ the invention includes surrounding the sensor with the measured pressure and suitably dimensioning the sensor such that the hydrostatic compressive stress can be made to exceed the tensile! bending stresses. Since the stresses are generally additive, the entire structure can be kept in compression. This occurs when w/T is less than about 2.3.
Stress isolation of sensor 70A is also achieved. Stress due to mounting sensor 70A to housing 54 causes a force to be exerted on the sensor (in addition to the force due to applied pressure) and introduces an er30r into pressure measurements. The elongated structure reduces the effects of mounting stress to-provide accurate measurement of differential pressures and a wide operating span. Generally, mounting stress attenuates distal to the mount as sensor length L increases. Any mounting stress errors must be sufficiently attenuated over length L to achieve the desired pressure error. Figure 4A is a graph which shows a relationship between stress attenuation and L/W
for the sensor of Figure 3. The vertical axis of Figure 4A shows the ratio of the stress at the mounting point (~0~ , to the measured stress due to the mounting stress (a~s~ , A change in the mounting stress ( ~Mot~r) causes an error in the pressure measurement due to the change in mounting stress at the pressure sensor (~M~St~) ~ In one embodiment, a O.01~ accuracy is requir,ed such thi~t when measuring a pressure of 4 psi W O96127123 PCTrUS96/02522 the error due to mounting stress must be less than 4x104 psi. A typical ~aMo~ value is 400 psi such that the attenuation of the mounting stress must be *x104 psi/by 400 psi = 10~. As shown in Figure 4A, this occurs at S approximately L/W of 4. In an embodiment in which two sensors are used for differential pressure measurement ancl they are match.ed within 10~ accuracy, C~M~Su U D/aMO~
is reduced by a fac:tor 10 such that L/W is approximately 3. In one embodiment, L/W is between 3 and 5.
Figure 5 is a cross-sectional view showing a displacement plot for sensor 70A. Figure 5 shows one-quarter of the cross section of sensor 70A. In Figure 5, sensor thickness T is approximately equal to ca~ity width w. An applied pressure P of 4500 psi lS displaces sensor 70A. In Figure S, about half the deflect1on is due1_o shear tension and about half is due to bulk deflecti.on. This is shown in Figure 4 where shear and bulk deflection meet. If sensor 70 were entirely in bulk mode co~ ession, sensor 70 would retain :its rectanc~lar shape as pressure was applied.
The shape distortion is due primarily to shear deflection.
Ficgure 6 is a cross sectional view of sensor 120 inclucLing elongated portion 122 and end portion 124 which form ravity 125 having width w. In one embodiment, ca.vity 125 is square. Dimensions T, W
and L a.re also shown in Figure 3. End portion 124 carries capacitive plate 128 which forms a capacitor with plate 126 carried on portion 122. Conductors 130 and 132 connect t:o plate 126 and 128, respectively.
Pressure P causes c:avity 12S to deform, thereby changing the capacitance between plates 126 and 128.
Figure 7 is a cross-sectional view of pressure sensor 200. Pressure sensor 200 includes top substrate W O9~S27123 PCTAUS96/025Z2 t 202 and lower substrate 204. Via hole 203 extends through substrate 202 ~or coupling to electrical conductors in cav:ity 205. Figure 8 shows top guard conductor 210, top capacitor conductor 212, top guard S conductor 214, bottom guard conductor 216, bottom capacitor conductor 218 and bottom guard conductor 220.
Fic~ure 5~ is a top plan view of substrate 202 in which electrical conductors on the under side of substrate 202 are visible therethrough. Figure 9 shows capacitor lo plate 222 connected to conductor 212 and surrounded by guard 224 which connects to conductors 214 and 210.
Figure 9 also shows vias 203 and 226 which extend through substrate 202 to conductors 210 and 212, respectively.
Figure L0 is a top plan view of bottom substrate 204 in which electrical conductors carried on the underside of substrate 204 are visible therethrough.
In the example, substrate 104 is sapphire. Figure 10 shows capacitor plate 228 which capacitively interacts with capacitor plate 222. Plate 228 is ~urrounded by electrical guard 2.30 and temperature sensor 232. Guard 230 shields plate 228 from stray capacitance and temperature probe 232 changes resistance based upon temperature. This provides temperature measurement of sensor 200, and allows compensation of pressure measurements based upon temperature for increased accuracy. Ron~;ng is preferably fusion bonding, also known as direct fusion bonding, or wafer bonding in which flat, polished surfaces are mated and are bonded with the application of heat. Etching is with P~C13 gas at 900 to 1100~ C with an SiO2 mask. It is desirable to align the crystal structure of the substrates such that the resulting crystal structure is substantially continuous after bonding. Further, the fusion bond CA 022l2384 l997-08-06 W O96~7123 PCTrUS96/02522 should be made at a tempera~ure as close as possible to the melting point. For this reason, the electrode material should ke capable of withstanding the high ~usion bond temperatures. For example, chrome, tungsten tantalum platinum and iridium allow bond temperatures in t]~e 1300~ C to 1700~ C range so that bond strength is ~-~i~;~ed and healing of discontinuitie6 in the crystal can occur. A typical bonding time is one hour. Other conductors include metal s:ilicides such as molybdenum silicide.
In a differential pressure transmitter a tempera1ure di~ference between the two sensors will cause an error. Acceptable performance will require that the difference be less than about 1~ F and that the difference be mea~ured to a precision o~ better than about 0 1~F and compensated. In a typical application, this will require that ~he sensor spacing be less than 0.5 inches.
A temperature gradient within a sensing - 20 element will also cause an error. Acceptable performance will require that the temperature difference between the inside and outside of the sensor be less thaLn about 0.001CF and that the sensors be closely matched. A senso~ width or thickness of greater than about 0.25 inches will place unreasonable demands on sensor matching in a typical application.
Figure 11 is a simplified schematic diagram of circuitry 250 for sensing differential pressure using two absclute pressure sensors having pressure responsive capacitors C~ and C2 carried therein. Each pressure sensor includes guard electrodes 252 which form capacitors connected to earth ground 253 of transmitter 50. The housing of the transmitter thus provides a shield or guard to stabilize the capacitance signal and W ~96~27~23 PCT~US96~252 prevent electrical noise ~rom being coupled into the circuit. In addition, a guard electrode can be formed on the exterior sur~ace o~ the sensor or the interior surface of the ceramic inserts shown in Figure 1.
Electrical isolation can be provided to accommodate 4-20 mA circuits that have connections to earth ground in other places. Capacitor Cl is driven by square wave generata,r 254 and <apacitor C2 i~ driven by square wave generata,r 256. The negative input of low noise differen,tial ampli:Eier 258 is connected to the undriven plates of capacitors C~ and C2, and the positive input of differe~tial amplifier 258 is connected to electrical ground. Differential amplifier 258 has negative feedback through capacitor CI and has charge ~Q i~rom capacitor Cl and Cz ~lowing in and out of the negative input. The output of differential amplifier 258 is a square wave representative of differential capacitance which is converted into a digital format by A/D
converter 260. In circuit 250, AQ is given as:
~Q = V~( Cl - C 2) Equation 2 And, the amplifier output is:
V~ = AQ/CI Equation 3 VPP~ ( CI C2/CI ) Cl should be selected to be approximately equal to (CI-C2)/2 at m~ ~ di~erential pressure, for example, 1 pF. Additionally, to compensate for manufact:uring variations, it is desirable to have separate gain adjustments for each sensor.
Additionally, circuitry should be included to measure W O96/27123 PCTnUS9GJ~5~2 Cl, C2or Cl+C2, independently, in order to compensate ~or variations in output due to common mode or line pressure. Circuitry ~or detecting capacitance output is set forth in U.S. Patent 5,083,091, entitled "Charge salanced Feedback Measurement Circuit," commonly assigned with the present application.
The ouL~L from converter 260 is provided to interface circuitry 262. Inter~ace 262 is connected to a 4-20 ~ current loop and provides the digital signLa 10from A/D converter 260 to current loop 264 in either a digital or analog ~ormat. Inter~ace 262 also provides power to circuitry 250 from loop 264. Interface 262 is also cap,able of receiving commAnds, such as those pursuant to the HART~ c~ ..;cations standard.
15Figures :L2 and 13 show another embodiment having sensor body 300 which carries pressure sensors 200A and 200B. Figure 12 is a side cross-sectional view of sensor body 300 and Figure 13 is a bottom plan view of body 300. Body 300 includes circuit boards 57 and 58 connected by wires through ~eed-throughs 73A, 73B and 73C through process barrier 71. Sensors 200A and 200B
are carried in alumina insert 302. Process barrier 71 forms che~mber 75 whLch may be a vacuum or filled with an inert gas. A groove 304 extends around alumina insert 302 and provides thermal and stress isolation. Mounting holes 306 are used ~to couple body 300 to a conduit ~not shown). In another embodiment, a bond between the sensor and the transmitter body is a fusion bond.
Figures 14 and 15 show sensor body 310 including middle sh~ell 312 which carries alumina insert 314. Sensors 200A and 200B are seated in alumina insert 314 which also car:ries ASIC chip 316. ASIC chip 316 performs the same flmctions as circuit board 57. Groove 318 provides stress isolation for insert 314 and sensors W O961~7123 PCT~US96/~2SZ2 200A and 200B. Process ~arrier 320 seals shell 312 and provides a second barrier to process ~1uid. Cavity 3~2 in shell 312 may carry a vacuum or inert gas. Feed-throughs 324 prov:ide a path for electric connections from ASIC chip 316 to circuit board 326. The design shown in Figure ~ allows the sensor assembly to be tested prior to weLding shell 312 into sensor body 310.
High temperature operations (such as ~razing the sensor to the alumina insert) can be conducted before mounting the sensor assen~ly in the housing.
In one embodiment, a pressure sensor of the invention has din~ensions as follows:
15Dimension Size (Range)Preferred T 0.02 to 0.2 inches 0.05 inch L 0.15 to 1.5 inches 0.6 inch W 0.02 to 0.2 inches 0.1 inch w 0.01 to 0.1 inches 0.05 inch 20C,avity 5xlO~ to lxlO~
Thic:kness t inches 0.000020 inch y (gap de~lection'l 2xlO~ to 5x10-5 at 9500 psi inches 0.000012 inch A typical capacitance for the sensor is 42 pF at zero pSl.
In one en~odiment, parameters of a pressure sensor are as ~ollows:
-PROPERTYZERO FULL SCALE SPAN
(0 psi)(4500 psi)(4500 psi) Gap (At Center) 20 11.25 8.75 (y Inches) Gap (Effective 20 12.37 7.63 Average) (~ I~ches) Sensor 42.2 68.2 26.0 Capac.itance (No Parasitics) (E'~) Parasitic 1.97 1.994 0.024 Capacitor (w/o Guard Shiel.d and assumes 0.6 inch l.ength) (E'f ) Sensor Tempe:rature Coefficient (PSI/C) -Q.059 0.534 0.593 ~pp~/C] -13.1 118.6 131.7 Figures 16A through 16G show cross-sections of a pressure sensor in accordance with one aspect of the invention. Figure :16A shows a rectangular structure in which all interior angles are 90~. Figure 16B shows a hexagonal sensor st:ructure in which all interior angles are 60~. A rhombus structure is shown in Figure 16C in which two inner angles are 60~ and two angles are 30~.
Figure 1~5D shows a triangular structure in which all interior angles are 60~. The structures shown in Figure 16A through 16D are convenient structures for sapphire because they tend to lie along planes of a sapphire crystal. Figure 16E shows a sensor 340 in which a CA 022l2384 l997-08-06 W 096l27t23 PCTAUS96/02522 rounded portion 342 is coupled to a rectangular portion 344. Cavity 346 is formed in rectangular portion 344_ Figure 16F shows another embodiment in which the cavity is formed in the rounded portion. Various alternatives S are also available including rounding both portions, such as shown in Figure 16G. A round cross section is desi.rable because :it can be closely fit into a round hole and can ~e sealed with a round O-ring. It can be fabricated by macll; n; ng a square structure with a diamond grinding wheel.
Figures 17A through 17B show example configurations of the electrodes for capacitive plates.
Electrode instability causes errors in capacitive pressure sensors wh.Lch have small gaps. Residual stress causes the pressure sensor structure to warp. Further, dimensional changes in the electrode surface change the gap ~;mension t. These changes can be caused by oxidation and reduc:tion or migration of atoms on the opposing surfaces. Figures 17A and 17B show examples of a solution to this problem in wnlch the capacitor plates are broken apart inl:o strips having widths and spacings which result in a capacitance that is substantially equal to a solid electrode. For example, if the substrate has a dielectric constant of 10 times the gap dielectric constant,, then the spacings could be about 10 times the gap ~;msn~ion and the widths could be less - than about the gap ~l~me~ion. This reduces the amount of material available to warp the sensor structure.
Further, the strips can be configured so that most of the electrical flux emerges from the back side of the electrodes. As the back side of the electrode is in contact with sapphire, it is protected from surface effects and will provide a stable capacitance even if the inside surface changes dimensions. Figures 17A and 17B show two ex~nple configurations which increase the amount of flux emanating ~rom the back side of the electrodes. Variations on this embodiment include providing guarcl electrodes (298) which overlie each plate electrode i~nd shield each plate electrode.
Although these plat;es are spaced apart, they are similar to a con1_inuous capacitor plate because of their spacing and relative size.
In one embodiment, the capacitor electrodes are implanted into the surface of the substrate. This provides electrode stability by protecting the electrode and helpling to reduce the amount of the change in the capacitance over time. A sapphire substrate is implanted with V ions at a dose of lXl0l8 ions/cm2 and an lS energy level of 200 KeV. This changes the resistivity of the sapphire from very highly resistant to about 15 Ohms/sq. The implanting process concentrates most of the V approximately l000 A beneath the original sapphire surface. An example of an implanted electrode 300 is shown in phantom in Figure 17B.
Figure 18 is a graph of bonding te~perature as a percent of melt;ing point temperature versus bond strength as a percent of material strength. For mA~;~um stability and accuracy, it is desirable to have the bond strength as close ~s possible to the material strength so that the sensor structure behaves as a unitary body.
In one embodiment of the invention, bonding temperature is the range indic~ted at 350 in Figure 18. Sapphire, quartz or silicon can be used in forming a pressure sensor, and their melting points are 2050~ C, 1723~ C
and 1415~ C, respec:tively. The desired range 350 shown in ~igure 18 is from a temperature of about 68% of the melting point abso]ute temperature. In one embodiment, bonding temperature should not exceed about 95~ of the W O96127123 PCTrUS9~102522 melting point temperature. The desired fusion bond as used herein is a bond having a strength which is substantially the same as the strength of the underlying crystal material, and is formed by the application of heat Wit]l substantially no foreign material in the bond.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. Single crystal materials include ~apphire, silicon, quartz, ruby and diamond. General;ly, these are materials with low hysteresis which are highly stable thereby providing little creep. In ge!neral, materials with higher melting points will be more stable thus, sapphire is one preferred material. ~he cavity of the sensor can be a vacuum or ~illed with a fluid or gas. The electrodes can include conductors such as metals, metal oxides or doped semiconductors and can be protected with an insulating dielectric material such as quartz. In another embodiment, the stress isolation structure is formed o:E a polycrystalline material. Further, the bonding can be formed with or without the use of pressure.
BACKGROUn~D OF THE IN~JENTION
The present invention relates to the process control industry. In particular, the invention relates S to a pressure sensor in a pressure transmitter.
Pressure transmitters in process applications measure pressure of a process and responsively co~l-n; cate the information over a two-wire proce~s applicatio~ loop, ~or example a 4-20 mA current loop.
Pressure s~nsors in transmitters typically comprise some type o~ a pressure responsive structure which has a def~ectable ~i~phrclgm that moves in response to appiied pressure. These structures can be used to measure both absolute and di~felential pressure. As used herein, a differential pressure sensor is a sensor which measures a relatively small pressure di~ferential (such as that generated across an orifice in a flow tube or between two different heights in a fluid filled container) over a relatively wide absolute pressure range. In a typical prior art transmittcr, to measure differential pressure, two dif~erent pressures are applied to opposing sides of the structure causing a relative deformation in the structure which is measured. Measurement of the de~ormation, for example, can be by measuring a change in electrical capacitance due to movement of capacitor plates carried on the structure or by change in resistance of a resistive strain gauge.
Highly accurate absolute pressure sensors have been desired. Howeuer, it has been difficult to obtain an absolute pressure sensor which can deliver an accurate output over a wide pressure range, from 0.4 psi to 4000 psi for example. It would also be desirable to measure differentiaLpressure with two absolute pressure sensors because this is mechanically much simpler than W O96J27123 PCTrUS96102522 it is to mechanically couple two pressures to a differential pressure sensor. Additionally, an over-pressure in a such a di~erential pressure sensor can damage the differential pressure sensor.
~owever, it has been difficult to obtain absol~te pressure sensors with sufficient accuracy to allow differential pressures in the 0.4 psi to 40 psi range to be measured in a device which must withstand static or line pressure extremes of as much as 4000 psia. For example, 0.01% of 4 psid requires 0.00001% of 4000 psia (10-7 or ().1 ppm).
Typical known pressure sensors used in process applications have unit-to-unit variations in sensitivity to sense~ pressure as well as unit-to-unit variations in undesired responses to extraneous parameters such as temperature. This can be a particular problem when the outputs of two absolute or gauge pressure sensors are combined to provide an output representing differential pressure or when the sensor is used over a large pressure range. Additionally, mechanical stress associated with mounting the sensor to the pressure transmitter result:s in relatively large errors in pressure measurement.
SU~ARY OF THE IN~nENTION
A pressure transmitter in a process control application for transmitting pressure on a process control loop inclucles an absolute pressure sensor. ~he absolute pressure sensor has a cavity therein in which cavity walls defori~ or are placed under stress as the walls respond to applied pressure. The pressure sensor includes a support structure which provides stress isolation. A sensor coupled to the cavity walls provides a pressure related output signal. In one embodimentr the sensor and support structure are W O96/27123 PCTrUS~G~25~2 integral with one another such that there are no joints between the sensor structure and the support structure.
The material and dimensions of the pressure sensor are selected such that the pressure related signal is very accurate and may be used over a wide pressure range or in pair~ as differential pressure sensors.
BRIEF DE~SCRIPTION OF THE DRAWINGS
Figure 1 is a cross-sectional view of a pressure transmitter.
Figure 2 is a cut-away perspective view of an -insert which carries a pressure sensor.
Figure 3 is a cross-sectional perspective view o~ a pressure sensor.
Figure 4 is a graph which illustrates operation of the present invention.
Figure 4A is a graph of stress attenuation versus I./W for a pressure sensor.
Figure 5 is a displacement plot of one-quarter of a pressure sensor where Q/T equals 1Ø
' Figure 6 is a cross sectional view of another embodiment of the pressure sensor.
Figure 7 is a cross-sectional view of a pressure sensor.
Figure 8 is a cross-sectional view of the pressure sensor of Figure 7.
Figure 9 is a top plan view of a top substrate of the pressure sensor of Figure 7.
Figure :L0 is a top plan view of a bottom substrate of the plressure sensor of Figure 7.
Figure 11 is a schematic diagram of circuitry for measuring capacitance of a pressure sensor.
Figure 12 is a cross-sectional view of a sensor body.
WO 961?7~23 PCI~/US9~102522 Figure 13 i5 a bottom plan view of the sensor body of Figure 12.
Figure 14 is a cross-sectional view of a sensor body.
Figure 1.5 is a bottom plan view of the sensor body of Figure 14.
Figures 16A through 16G show cross-sectional views o:E various embodiments of the invention.
Figures 17A and 17B show two embodiments of capacitor plates.
Figure 18 is a graph of bonding temperature as a percent of melting point temperature versus bonding strength as a percent of material strength.
DETATT.~n DESCRIPTION OF THE PREFERRED EMBODIMENTS
Figure ~. shows pressure transmitter 50 having transmitter body 52, sensor body 54 and ~lange 55.
Sensor body 54 in~cludes pressure sensors 70A and 70B
which measure absolute pressure P1 and absolute pressure P2~ respec:tively,.o~ process ~luid. Transmitter body 52 include.s transmit~er (I/O) circuitry 60 which sends information related to pressures P1 and P2 over a two-wire process control loop, such as a 4-20 mA current loop. Circuit boa.rd 57 couples sensor circuit board 58 to sensors 70A and 70B and receives electrical signals related to pressures P1 and P2. Circuitry on sensor circuit board 58 d!igitizes and processes these signals, and comm-ln; cates pressure information to transmitter circuitry 60 using data bus 62. Inserts 67A and 67B
carry sensors 70A and 70B. A process barrier 71 forms cavity 75 and prevents pressures P1 and P2 from escaping sensor body 54 should insert 67A or 67B fail. Cavity 75 may be a vacuum or filled with an inert gas. Feed-throughs 73A, 73B and 73C provide electrical pathways across barrier 71 between circuit boards 57 and 58.
W O96/27123 PCTnUS96102522 Figure 2 is a cut-away perspective view o~
insert 6;7A which carries sensor 70A. In one embodimen*, insert 70A comprises alumina. Additionally, sensor 70A
should be small relative to housing 54 and positioned relatively close to sensor 70B to reduce thermal variations and thereby improve accuracy. This is achieved because the thermal time constant of the sensor is significantly less than the thermal time constant of the housing to mini~ize temperature gradients within the sensing element.
Figure 3 shows sensor 70A in accordance with on~ en~odiment. S~ensor 70A includes upper substrate 72 and lower subst:rate 74 which form cavity 76 therebetween. Eigure 3 shows overall length L, thickne~;s T, width w, m; n; mllm cavity width w o~ the deflecting structure of the sensing cavity and central deflection y due to applied pressure P.
Typical prior art sensors have a ratio of m~; ~11~ to mi n i r~ll~ pressure range which can be accurately sensed of about 100:1. Thls is primarily limited by non-repeatable errors in the structure and noise. Further, prior art sensors are typically limited by the use of materials with imperfect elasticity, inadequate stress isolation and poor signal-to-noise ratio of the sensing element. For example, metal based pressure sensors have problems with hysteresis, material creep and relaxation. Ceramic based sensors are ~ormed of a matrix of crystals typically bonded with silicon glass and also exhibit these problems. Glass-based sensors are subject to instability due to phase changes ancl viscosity of the glass. It has been recognized that single crystal materials have superior elastic properties and that sensors based on such materials can have improved accuracy. Single crystal diaphragm WO 96~27~23 PCI~/US96/02522 sensors have also been used, however they have typically been placed under high tensile stress due to internal p~essurization. Additionally, this type of sensor typically includes glass or metal structural elements and use;s a low strength bonding material such as glass frit, solder or epoxy. Further, this type of sensor has typically had ;nArle~uate stress isolation.
Additionally, typical prior art sensors have used an oil fill, such as silicon oil, for use with over--pressure pro1_ection me~h~n; 6~ . The oil fill is also used when coupling a corrosion resistant isolation diaphragm to the pressure sensor. These sensors are subject to ~ailure due to loss of fill fluid. Typical prior art isolati~Lg ~i~rh~agms have been form formed in metal cmd are used to keep particles and corrosive materials away ~Erom the pressure sensor. These ~i~phragms must ~e thin in order to m; n; ~; ~e errors, however this makes the diaphragm particularly fragile and limits li~e o~ thLe ~;~ph~agm. Further, different = 20 ~i~phragm materials are required for different applications and there is no metal which can be used universally.
The present disclosure sets forth a pressure sensingi structure formed of a single crystal material.
Joints in the mat~erial are formed using fusion bonding such that they are substantially free of foreign materials which could lead to inaccuracies. The structure may be surrounded by process fluid which applies pressure to the structure. This is possible because!the struct:ure is formed of a corrosion resistant material. The brittle material is deformed by compression whichL provides a higher ratio of working stress--to-error s1_ress and therefore a higher signal-to-noise ratio. This results because brittle materials are W O96127123 PCTnUS96/02522 stronger in comp,ression than in tension. This configuration causes the sensor to be less sensitive to corrosia,n of the outer surface because the output is less dependent on the cube of thickness and more closely linearly related to thickness. Placement of the structure in the process fluid improves relia~ility because the isolaLtion ~;~ph~agms and oil ~ill are elimin~ted. An elon~ated shaft provides stress isolatia,n and is formed of the same single crystal material to help reduce errors. Electrical le~ds are provided through the elongated shaft and isolated from process fluid. A path through the shaft can also be used to apply a re~.erence pressure. In one embodiment, corrosia,n resistant material such as sapphire is used and an internal sen.sor is used which allows the oil fill and iso:Lating ~;~ph~agms to be eliminated. In one embodiment, matched sensors are used as dual sensors to measure~di~ferential pressure, which helps reduce errors common to the two sensors. Capacitance sensing is desirable ~ecause it provides a stable, low noise signal. Capacitor~s have no inherent thermal noise and they have a high ,gauge factor with a correspondingly high output which m;n;m;~es the noise contribution of electronic detection circuitry. They also have excellent zero stability and very low zero temperature coefficients. Thec,e factors make it practical to detect the very low pressure changes in a high pressure sensor that are encountered in a differential pressure transmitter based on two independent sensing elements.
Improved pressure resolution is achieved by use of electronic circuitry.
It is we:Ll known that the deflection y due to bending in a diaphragm is proportional to ( w2) where w W O96~?.7~23 PCTAUS96/025Z2 is the effective m;n;mum width of the diaphragm and T is (Y T2) . The sensor output is therefore highly dependent on dimensional variations.
It is known that deflection due to shear in a diaphra~m proportional to W2/T. (Y~ T ) This reduces the variation in output versus sensor ~imen~ions but this variation can be further reduced by relying on "bulk" deflection as defined below.
The deflectio~ y of cavity 76 will depend on lo the effects of bending deflection, shear deflection and 'bulk" deflection. Assuming that W/w equals a constant which is greater than 2, this can be expressed as follows:
Y ~ Kl P~K2 Plw\+K3Plw~
w ~ IJ~ T~ E\TI Equation 1 where:
Rl = "bulk" deflection constant for material;
K2 = shear deflection constant for material;
R3 = bending deflection constant for material;
W = sensor width;
P = external pressure;
y = central deflection of cavity 76 due to applied pressure P;
w = width of cavity 76;
T = thickness at slot 76 of sensor 70 (for a square cross section, T=W/2);
t = depth of cavity 76;
W O96/27123 PCTnJS96102522 L = sensor length which is much greater than sensor width w and SensQr thickness T;
E = Young's modulus; and G = shear modulus.
Equation 1 illustrates that shear and bending deflection on cavity 76 are dependent on cavity width w and sens,or thickness T.
The term Nbulk" deflection as used herein describes the RIP/E component of Ecluation 1, where y is directly proportional to width w of cavity 76. (y ~ w) Therefore, bulk dLeflection is highly accurate and desirable in dete~n; n; ng pressure and is substantially independent of var:Lations in thickness T such as those which occur with corrosion. One aspect of the present invention includes providing a pressure sensor having ~ nsions such that bulk mode deflection component of total deflection oE the sensor is increased.
Figure 4 is a graph of Equation 1 which shows total de!flection and its individual components: bulk deflection, shear deflection and bending deflection.
When w/T is between 1 and 4, shear deflection pre~sm;n~tes total deflection. As w/T gets smaller, the contribution of shear deflection relative to bulk deflection gets smaller. For w/T less than 1.0, bulk deflection is the pre~c~m;n~nt factor contributing to total deflection of- sensor 70A due to applied pressure.
Thus, one aspect of the invention includes pressure sensors having a ratio of w (cavity width) divided by T
(thickness from an outer surface to an inner surface) of less than or equal to about 1Ø For shear deflection to exceed bending deflection w/T should be less than 4Ø In one embocliment, the ratio of w/T is: 0.05 <
w/T <1Ø The minimllm w/T value is determined by how W O96127123 PCTrUS96102522 t r small w can be practically made and inaccuracies due to the~nal gradients as T is made large.
It is desirable to m;n;~; ze tensile stresses in sensors made of brittle materials because this reduces the possibility of failure due to cracking of the sensor. One aspect o~ the invention includes surrounding the sensor with the measured pressure and suitably dimensioning the sensor such that the hydrostatic compressive stress can be made to exceed the tensile! bending stresses. Since the stresses are generally additive, the entire structure can be kept in compression. This occurs when w/T is less than about 2.3.
Stress isolation of sensor 70A is also achieved. Stress due to mounting sensor 70A to housing 54 causes a force to be exerted on the sensor (in addition to the force due to applied pressure) and introduces an er30r into pressure measurements. The elongated structure reduces the effects of mounting stress to-provide accurate measurement of differential pressures and a wide operating span. Generally, mounting stress attenuates distal to the mount as sensor length L increases. Any mounting stress errors must be sufficiently attenuated over length L to achieve the desired pressure error. Figure 4A is a graph which shows a relationship between stress attenuation and L/W
for the sensor of Figure 3. The vertical axis of Figure 4A shows the ratio of the stress at the mounting point (~0~ , to the measured stress due to the mounting stress (a~s~ , A change in the mounting stress ( ~Mot~r) causes an error in the pressure measurement due to the change in mounting stress at the pressure sensor (~M~St~) ~ In one embodiment, a O.01~ accuracy is requir,ed such thi~t when measuring a pressure of 4 psi W O96127123 PCTrUS96/02522 the error due to mounting stress must be less than 4x104 psi. A typical ~aMo~ value is 400 psi such that the attenuation of the mounting stress must be *x104 psi/by 400 psi = 10~. As shown in Figure 4A, this occurs at S approximately L/W of 4. In an embodiment in which two sensors are used for differential pressure measurement ancl they are match.ed within 10~ accuracy, C~M~Su U D/aMO~
is reduced by a fac:tor 10 such that L/W is approximately 3. In one embodiment, L/W is between 3 and 5.
Figure 5 is a cross-sectional view showing a displacement plot for sensor 70A. Figure 5 shows one-quarter of the cross section of sensor 70A. In Figure 5, sensor thickness T is approximately equal to ca~ity width w. An applied pressure P of 4500 psi lS displaces sensor 70A. In Figure S, about half the deflect1on is due1_o shear tension and about half is due to bulk deflecti.on. This is shown in Figure 4 where shear and bulk deflection meet. If sensor 70 were entirely in bulk mode co~ ession, sensor 70 would retain :its rectanc~lar shape as pressure was applied.
The shape distortion is due primarily to shear deflection.
Ficgure 6 is a cross sectional view of sensor 120 inclucLing elongated portion 122 and end portion 124 which form ravity 125 having width w. In one embodiment, ca.vity 125 is square. Dimensions T, W
and L a.re also shown in Figure 3. End portion 124 carries capacitive plate 128 which forms a capacitor with plate 126 carried on portion 122. Conductors 130 and 132 connect t:o plate 126 and 128, respectively.
Pressure P causes c:avity 12S to deform, thereby changing the capacitance between plates 126 and 128.
Figure 7 is a cross-sectional view of pressure sensor 200. Pressure sensor 200 includes top substrate W O9~S27123 PCTAUS96/025Z2 t 202 and lower substrate 204. Via hole 203 extends through substrate 202 ~or coupling to electrical conductors in cav:ity 205. Figure 8 shows top guard conductor 210, top capacitor conductor 212, top guard S conductor 214, bottom guard conductor 216, bottom capacitor conductor 218 and bottom guard conductor 220.
Fic~ure 5~ is a top plan view of substrate 202 in which electrical conductors on the under side of substrate 202 are visible therethrough. Figure 9 shows capacitor lo plate 222 connected to conductor 212 and surrounded by guard 224 which connects to conductors 214 and 210.
Figure 9 also shows vias 203 and 226 which extend through substrate 202 to conductors 210 and 212, respectively.
Figure L0 is a top plan view of bottom substrate 204 in which electrical conductors carried on the underside of substrate 204 are visible therethrough.
In the example, substrate 104 is sapphire. Figure 10 shows capacitor plate 228 which capacitively interacts with capacitor plate 222. Plate 228 is ~urrounded by electrical guard 2.30 and temperature sensor 232. Guard 230 shields plate 228 from stray capacitance and temperature probe 232 changes resistance based upon temperature. This provides temperature measurement of sensor 200, and allows compensation of pressure measurements based upon temperature for increased accuracy. Ron~;ng is preferably fusion bonding, also known as direct fusion bonding, or wafer bonding in which flat, polished surfaces are mated and are bonded with the application of heat. Etching is with P~C13 gas at 900 to 1100~ C with an SiO2 mask. It is desirable to align the crystal structure of the substrates such that the resulting crystal structure is substantially continuous after bonding. Further, the fusion bond CA 022l2384 l997-08-06 W O96~7123 PCTrUS96/02522 should be made at a tempera~ure as close as possible to the melting point. For this reason, the electrode material should ke capable of withstanding the high ~usion bond temperatures. For example, chrome, tungsten tantalum platinum and iridium allow bond temperatures in t]~e 1300~ C to 1700~ C range so that bond strength is ~-~i~;~ed and healing of discontinuitie6 in the crystal can occur. A typical bonding time is one hour. Other conductors include metal s:ilicides such as molybdenum silicide.
In a differential pressure transmitter a tempera1ure di~ference between the two sensors will cause an error. Acceptable performance will require that the difference be less than about 1~ F and that the difference be mea~ured to a precision o~ better than about 0 1~F and compensated. In a typical application, this will require that ~he sensor spacing be less than 0.5 inches.
A temperature gradient within a sensing - 20 element will also cause an error. Acceptable performance will require that the temperature difference between the inside and outside of the sensor be less thaLn about 0.001CF and that the sensors be closely matched. A senso~ width or thickness of greater than about 0.25 inches will place unreasonable demands on sensor matching in a typical application.
Figure 11 is a simplified schematic diagram of circuitry 250 for sensing differential pressure using two absclute pressure sensors having pressure responsive capacitors C~ and C2 carried therein. Each pressure sensor includes guard electrodes 252 which form capacitors connected to earth ground 253 of transmitter 50. The housing of the transmitter thus provides a shield or guard to stabilize the capacitance signal and W ~96~27~23 PCT~US96~252 prevent electrical noise ~rom being coupled into the circuit. In addition, a guard electrode can be formed on the exterior sur~ace o~ the sensor or the interior surface of the ceramic inserts shown in Figure 1.
Electrical isolation can be provided to accommodate 4-20 mA circuits that have connections to earth ground in other places. Capacitor Cl is driven by square wave generata,r 254 and <apacitor C2 i~ driven by square wave generata,r 256. The negative input of low noise differen,tial ampli:Eier 258 is connected to the undriven plates of capacitors C~ and C2, and the positive input of differe~tial amplifier 258 is connected to electrical ground. Differential amplifier 258 has negative feedback through capacitor CI and has charge ~Q i~rom capacitor Cl and Cz ~lowing in and out of the negative input. The output of differential amplifier 258 is a square wave representative of differential capacitance which is converted into a digital format by A/D
converter 260. In circuit 250, AQ is given as:
~Q = V~( Cl - C 2) Equation 2 And, the amplifier output is:
V~ = AQ/CI Equation 3 VPP~ ( CI C2/CI ) Cl should be selected to be approximately equal to (CI-C2)/2 at m~ ~ di~erential pressure, for example, 1 pF. Additionally, to compensate for manufact:uring variations, it is desirable to have separate gain adjustments for each sensor.
Additionally, circuitry should be included to measure W O96/27123 PCTnUS9GJ~5~2 Cl, C2or Cl+C2, independently, in order to compensate ~or variations in output due to common mode or line pressure. Circuitry ~or detecting capacitance output is set forth in U.S. Patent 5,083,091, entitled "Charge salanced Feedback Measurement Circuit," commonly assigned with the present application.
The ouL~L from converter 260 is provided to interface circuitry 262. Inter~ace 262 is connected to a 4-20 ~ current loop and provides the digital signLa 10from A/D converter 260 to current loop 264 in either a digital or analog ~ormat. Inter~ace 262 also provides power to circuitry 250 from loop 264. Interface 262 is also cap,able of receiving commAnds, such as those pursuant to the HART~ c~ ..;cations standard.
15Figures :L2 and 13 show another embodiment having sensor body 300 which carries pressure sensors 200A and 200B. Figure 12 is a side cross-sectional view of sensor body 300 and Figure 13 is a bottom plan view of body 300. Body 300 includes circuit boards 57 and 58 connected by wires through ~eed-throughs 73A, 73B and 73C through process barrier 71. Sensors 200A and 200B
are carried in alumina insert 302. Process barrier 71 forms che~mber 75 whLch may be a vacuum or filled with an inert gas. A groove 304 extends around alumina insert 302 and provides thermal and stress isolation. Mounting holes 306 are used ~to couple body 300 to a conduit ~not shown). In another embodiment, a bond between the sensor and the transmitter body is a fusion bond.
Figures 14 and 15 show sensor body 310 including middle sh~ell 312 which carries alumina insert 314. Sensors 200A and 200B are seated in alumina insert 314 which also car:ries ASIC chip 316. ASIC chip 316 performs the same flmctions as circuit board 57. Groove 318 provides stress isolation for insert 314 and sensors W O961~7123 PCT~US96/~2SZ2 200A and 200B. Process ~arrier 320 seals shell 312 and provides a second barrier to process ~1uid. Cavity 3~2 in shell 312 may carry a vacuum or inert gas. Feed-throughs 324 prov:ide a path for electric connections from ASIC chip 316 to circuit board 326. The design shown in Figure ~ allows the sensor assembly to be tested prior to weLding shell 312 into sensor body 310.
High temperature operations (such as ~razing the sensor to the alumina insert) can be conducted before mounting the sensor assen~ly in the housing.
In one embodiment, a pressure sensor of the invention has din~ensions as follows:
15Dimension Size (Range)Preferred T 0.02 to 0.2 inches 0.05 inch L 0.15 to 1.5 inches 0.6 inch W 0.02 to 0.2 inches 0.1 inch w 0.01 to 0.1 inches 0.05 inch 20C,avity 5xlO~ to lxlO~
Thic:kness t inches 0.000020 inch y (gap de~lection'l 2xlO~ to 5x10-5 at 9500 psi inches 0.000012 inch A typical capacitance for the sensor is 42 pF at zero pSl.
In one en~odiment, parameters of a pressure sensor are as ~ollows:
-PROPERTYZERO FULL SCALE SPAN
(0 psi)(4500 psi)(4500 psi) Gap (At Center) 20 11.25 8.75 (y Inches) Gap (Effective 20 12.37 7.63 Average) (~ I~ches) Sensor 42.2 68.2 26.0 Capac.itance (No Parasitics) (E'~) Parasitic 1.97 1.994 0.024 Capacitor (w/o Guard Shiel.d and assumes 0.6 inch l.ength) (E'f ) Sensor Tempe:rature Coefficient (PSI/C) -Q.059 0.534 0.593 ~pp~/C] -13.1 118.6 131.7 Figures 16A through 16G show cross-sections of a pressure sensor in accordance with one aspect of the invention. Figure :16A shows a rectangular structure in which all interior angles are 90~. Figure 16B shows a hexagonal sensor st:ructure in which all interior angles are 60~. A rhombus structure is shown in Figure 16C in which two inner angles are 60~ and two angles are 30~.
Figure 1~5D shows a triangular structure in which all interior angles are 60~. The structures shown in Figure 16A through 16D are convenient structures for sapphire because they tend to lie along planes of a sapphire crystal. Figure 16E shows a sensor 340 in which a CA 022l2384 l997-08-06 W 096l27t23 PCTAUS96/02522 rounded portion 342 is coupled to a rectangular portion 344. Cavity 346 is formed in rectangular portion 344_ Figure 16F shows another embodiment in which the cavity is formed in the rounded portion. Various alternatives S are also available including rounding both portions, such as shown in Figure 16G. A round cross section is desi.rable because :it can be closely fit into a round hole and can ~e sealed with a round O-ring. It can be fabricated by macll; n; ng a square structure with a diamond grinding wheel.
Figures 17A through 17B show example configurations of the electrodes for capacitive plates.
Electrode instability causes errors in capacitive pressure sensors wh.Lch have small gaps. Residual stress causes the pressure sensor structure to warp. Further, dimensional changes in the electrode surface change the gap ~;mension t. These changes can be caused by oxidation and reduc:tion or migration of atoms on the opposing surfaces. Figures 17A and 17B show examples of a solution to this problem in wnlch the capacitor plates are broken apart inl:o strips having widths and spacings which result in a capacitance that is substantially equal to a solid electrode. For example, if the substrate has a dielectric constant of 10 times the gap dielectric constant,, then the spacings could be about 10 times the gap ~;msn~ion and the widths could be less - than about the gap ~l~me~ion. This reduces the amount of material available to warp the sensor structure.
Further, the strips can be configured so that most of the electrical flux emerges from the back side of the electrodes. As the back side of the electrode is in contact with sapphire, it is protected from surface effects and will provide a stable capacitance even if the inside surface changes dimensions. Figures 17A and 17B show two ex~nple configurations which increase the amount of flux emanating ~rom the back side of the electrodes. Variations on this embodiment include providing guarcl electrodes (298) which overlie each plate electrode i~nd shield each plate electrode.
Although these plat;es are spaced apart, they are similar to a con1_inuous capacitor plate because of their spacing and relative size.
In one embodiment, the capacitor electrodes are implanted into the surface of the substrate. This provides electrode stability by protecting the electrode and helpling to reduce the amount of the change in the capacitance over time. A sapphire substrate is implanted with V ions at a dose of lXl0l8 ions/cm2 and an lS energy level of 200 KeV. This changes the resistivity of the sapphire from very highly resistant to about 15 Ohms/sq. The implanting process concentrates most of the V approximately l000 A beneath the original sapphire surface. An example of an implanted electrode 300 is shown in phantom in Figure 17B.
Figure 18 is a graph of bonding te~perature as a percent of melt;ing point temperature versus bond strength as a percent of material strength. For mA~;~um stability and accuracy, it is desirable to have the bond strength as close ~s possible to the material strength so that the sensor structure behaves as a unitary body.
In one embodiment of the invention, bonding temperature is the range indic~ted at 350 in Figure 18. Sapphire, quartz or silicon can be used in forming a pressure sensor, and their melting points are 2050~ C, 1723~ C
and 1415~ C, respec:tively. The desired range 350 shown in ~igure 18 is from a temperature of about 68% of the melting point abso]ute temperature. In one embodiment, bonding temperature should not exceed about 95~ of the W O96127123 PCTrUS9~102522 melting point temperature. The desired fusion bond as used herein is a bond having a strength which is substantially the same as the strength of the underlying crystal material, and is formed by the application of heat Wit]l substantially no foreign material in the bond.
Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. Single crystal materials include ~apphire, silicon, quartz, ruby and diamond. General;ly, these are materials with low hysteresis which are highly stable thereby providing little creep. In ge!neral, materials with higher melting points will be more stable thus, sapphire is one preferred material. ~he cavity of the sensor can be a vacuum or ~illed with a fluid or gas. The electrodes can include conductors such as metals, metal oxides or doped semiconductors and can be protected with an insulating dielectric material such as quartz. In another embodiment, the stress isolation structure is formed o:E a polycrystalline material. Further, the bonding can be formed with or without the use of pressure.
Claims (48)
1. A pressure transmitter in a process control system for transmitting pressure on a process control loop the transmitter comprising:
I/O circuitry coupling to the loop for transmitting information on the loop;
compensation circuitry receiving a pressure related signal and responsively controlling the I/O circuitry to transmit pressure information on the loop;
a transmitter housing containing the I/O
circuitry and the compensation circuitry;
a mounting portion in the housing formed of a mounting portion material;
a process barrier in the housing which isolates the I/O circuitry and the compensation circuitry from the mounting portion;
an elongated member formed substantially of a brittle corrosion-resistant material which is different than the mounting portion material coupled to the mounting portion at a proximal end and having a passageway extending therethrough;
a pressure responsive portion at a distal end of the elongated member for immersion in a process fluid and deforming in response to process fluid pressure; and a sensor coupled to the pressure responsive portion and having an electrical connection to the compensation circuitry through the passageway of the elongated portion and a feed-through in the process barrier, wherein the sensor and electrical connection are isolated from process fluid by the elongated member.
I/O circuitry coupling to the loop for transmitting information on the loop;
compensation circuitry receiving a pressure related signal and responsively controlling the I/O circuitry to transmit pressure information on the loop;
a transmitter housing containing the I/O
circuitry and the compensation circuitry;
a mounting portion in the housing formed of a mounting portion material;
a process barrier in the housing which isolates the I/O circuitry and the compensation circuitry from the mounting portion;
an elongated member formed substantially of a brittle corrosion-resistant material which is different than the mounting portion material coupled to the mounting portion at a proximal end and having a passageway extending therethrough;
a pressure responsive portion at a distal end of the elongated member for immersion in a process fluid and deforming in response to process fluid pressure; and a sensor coupled to the pressure responsive portion and having an electrical connection to the compensation circuitry through the passageway of the elongated portion and a feed-through in the process barrier, wherein the sensor and electrical connection are isolated from process fluid by the elongated member.
2. The pressure transmitter of claim 1 wherein the elongated member defines a cavity therethrough for applying a reference pressure to the pressure responsive structure.
3. The pressure transmitter of claim 1 including a second elongated member coupled to the mounting portion and carrying a second pressure responsive portion having a second sensor coupled to the compensation circuitry, wherein the pressure information relates to a differential pressure.
4. The pressure transmitter of claim 1 wherein the elongated member and pressure responsive portion include bonds which are substantially free of foreign material.
5. The pressure transmitter of claim 1 wherein the elongated member and the pressure responsive portion have a width w and a thickness T, and w/T is less than about 4Ø
6. The pressure transmitter of claim 5 wherein the elongated member and the pressure responsive portion have a width w and a thickness T, and w/T is less than about 2.3.
7. The pressure transmitter of claim 6 wherein the elongated member and the pressure responsive portion have a width w and a thickness T, and w/T is less than about 1Ø
8. The pressure transmitter of claim 1 including electrical conductors implanted in the elongated member and providing the electrical connection between the sensor and the compensation circuitry.
9. The pressure transmitter of claim 1 wherein the elongated member has a length L exposed to process fluid and a maximum width w and L/w is greater than about 3Ø
10. A pressure sensor in a pressure transmitter, comprising:
a pressure responsive structure of a brittle, corrosion resistant material comprising more than one substrate of single crystal material bonded to at least a second substrate of single crystal material;
a capacitance sensor coupled to the pressure responsive structure providing a capacitive output in response to deformation of the pressure responsive structure due to an applied pressure;
and wherein the bond between the substrates is a fusion bond which has a bond strength of crystal substantially equal to the single crystal material strength and is formed at a temperature between about 65 percent and 95 percent of an absolute temperature corresponding to a melting point of the material.
a pressure responsive structure of a brittle, corrosion resistant material comprising more than one substrate of single crystal material bonded to at least a second substrate of single crystal material;
a capacitance sensor coupled to the pressure responsive structure providing a capacitive output in response to deformation of the pressure responsive structure due to an applied pressure;
and wherein the bond between the substrates is a fusion bond which has a bond strength of crystal substantially equal to the single crystal material strength and is formed at a temperature between about 65 percent and 95 percent of an absolute temperature corresponding to a melting point of the material.
11. The pressure sensor of claim 10 wherein the pressure responsive structure has a cavity width w and a thickness T, and. w/T is less than about 4Ø
12. The pressure sensor of claim 10 wherein the pressure responsive structure includes a passageway therethrough for providing a reference pressure proximate the capacitance sensor.
13. The pressure sensor of claim 10 wherein the pressure responsive structure includes electrical conductors extending therethrough able to withstand a temperature used to form the bond.
14. The pressure sensor of claim 13 wherein the electrical conductors are implanted in the pressure responsive structure.
15. The pressure sensor of claim 13 wherein the material comprises sapphire.
16. A pressure sensor in a pressure transmitter, comprising:
an elongated pressure responsive structure of a single crystal, corrosion-resistant material, the elongated structure having a pressure sensor width w and a thickness T;
a capacitance sensor coupled to the pressure responsive structure providing a capacitive output in response to deformation of the pressure responsive structure due to an applied pressure;
and wherein w/T is less than about 4Ø
an elongated pressure responsive structure of a single crystal, corrosion-resistant material, the elongated structure having a pressure sensor width w and a thickness T;
a capacitance sensor coupled to the pressure responsive structure providing a capacitive output in response to deformation of the pressure responsive structure due to an applied pressure;
and wherein w/T is less than about 4Ø
17. The pressure sensor of claim 16 wherein the pressure responsive structure includes more than one substrate and a bond between substrates is a fusion bond which has a strength substantially equal to the single crystal material strength and is formed at a bonding temperature between about 65 percent and about 95 percent of an absolute temperature corresponding to a melting point of the material.
18. The pressure sensor of claim 16 wherein the elongated pressure responsive structure includes a cavity extending therethrough for providing a reference pressure proximate the capacitance sensor.
19. The pressure sensor of claim 16 including electrical conductors implanted in the pressure responsive structure.
20. The pressure sensor of claim 17 including electrical conductors in the pressure responsive structure having a melting point greater than the bonding temperature.
21. The pressure sensor of claim 16 wherein the pressure responsive structure is coupled to a pressure transmitter housing by a stress isolating structure of the same single crystal, corrosion-resistant material.
22. The pressure sensor of claim 21 wherein the joint between the pressure sensing structure and the pressure transmitter housing is a fusion bond.
23. The pressure sensor of claim 16 wherein the capacitance sensor includes conducting electrodes formed of conducting strips on opposing surfaces of a cavity gap.
24. The pressure sensor of claim 23 wherein the conducting strips have width and spacing substantially equal or less than a cavity gap spacing.
25. The pressure sensor of claim 21 wherein the pressure responsive structure and stress isolating structure are surrounded by and directly exposed to process pressure fluid.
26. The pressure sensor of claim 16 wherein the material comprises sapphire.
27. A pressure sensor in a pressure transmitter, comprising:
a pressure responsive structure;
a first capacitor plate having a back side attached to the pressure responsive structure and a front side;
a second capacitor plate having a back side attached to the pressure responsive structure and a front side, the first and second capacitor plates positioned to provide relative deflection therebetween in response to pressure applied to the pressure responsive structure; and wherein the electric field between the first and second capacitor plates emanates substantially between the back sides of the first and second capacitor plates.
a pressure responsive structure;
a first capacitor plate having a back side attached to the pressure responsive structure and a front side;
a second capacitor plate having a back side attached to the pressure responsive structure and a front side, the first and second capacitor plates positioned to provide relative deflection therebetween in response to pressure applied to the pressure responsive structure; and wherein the electric field between the first and second capacitor plates emanates substantially between the back sides of the first and second capacitor plates.
28. The pressure sensor of claim 27 wherein the pressure responsive structure includes a cavity and the capacitor plates are positioned on opposite sides of the cavity.
29. The pressure sensor of claim 28 including a plurality of first capacitor plates on a first side of the cavity adjacent the first capacitor plate and a plurality of second capacitor plates on a second side of the cavity adjacent the second capacitor plate.
30. The pressure sensor of claim 29 wherein the first capacitor plates are laterally offset relative to the second capacitor plates.
31. The pressure sensor of claim 27 wherein the pressure responsive material comprises sapphire.
32. The pressure sensor of claim 27 wherein the pressure responsive structure comprises first and second portions fusion bonded together and forming a gap therebetween which carries the first and second capacitor plates.
33. The pressure sensor of claim 27 wherein the pressure responsive structure has a length between a mounting portion and a sensing portion selected to provide a desired stress isolation.
34. A transmitter for providing an output related to a differential pressure, comprising:
a transmitter body;
a first pressure responsive structure formed substantially of a single crystal material coupled to a first process pressure;
a first sensing means coupled to the first pressure responsive structure having an output related to the response of the first pressure responsive structure to the first process pressure;
a first stress isolation member coupling the first pressure responsive structure to the transmitter body, the first stress isolation member formed substantially of the single crystal material;
a second pressure responsive structure formed substantially of a single crystal material coupled to a second process pressure;
a second sensing means coupled to the second pressure responsive structure having an output related to the response of the second pressure responsive structure to the second process pressure;
a second stress isolation member coupling the second pressure responsive structure to the transmitter body, the second stress isolation member formed substantially of the single crystal material; and output means in the transmitter body coupled to the first and second sensors for determining the difference in pressure between the first and second process pressures and providing an output related to a differential pressure therebetween.
a transmitter body;
a first pressure responsive structure formed substantially of a single crystal material coupled to a first process pressure;
a first sensing means coupled to the first pressure responsive structure having an output related to the response of the first pressure responsive structure to the first process pressure;
a first stress isolation member coupling the first pressure responsive structure to the transmitter body, the first stress isolation member formed substantially of the single crystal material;
a second pressure responsive structure formed substantially of a single crystal material coupled to a second process pressure;
a second sensing means coupled to the second pressure responsive structure having an output related to the response of the second pressure responsive structure to the second process pressure;
a second stress isolation member coupling the second pressure responsive structure to the transmitter body, the second stress isolation member formed substantially of the single crystal material; and output means in the transmitter body coupled to the first and second sensors for determining the difference in pressure between the first and second process pressures and providing an output related to a differential pressure therebetween.
35. The transmitter of claim 34 wherein the first and second pressure responsive members are exposed directly to the process fluid and the single crystal material is substantially resistant to corrosion due to the process fluid.
36. The transmitter of claim 34 wherein the sensing means comprises capacitor electrodes and the output is a capacitance related to pressure.
37. The transmitter of claim 34 wherein the first and second pressure sensing structures are coupled to first and second reference pressures and the pressure sensing structures are responsive to a difference between a reference pressure and a process pressure.
38. The transmitter of claim 37 wherein the reference pressures are coupled together and are equal.
39. The transmitter of claim 38 wherein the reference pressures are substantially independent of process pressure.
40. The transmitter of claim 37 wherein the reference pressure is substantially a vacuum.
41. The transmitter of claim 37 wherein the reference pressure is transmitted via a gas.
42. The transmitter of claim 34 wherein the single crystal material is sapphire.
43. The transmitter of claim 34 wherein the first and second pressure responsive structures are maintained at substantially the same temperature by the transmitter housing.
44. The transmitter of claim 43 wherein the pressure responsive structures are spaced apart such that they maintain a temperature differential within a predetermined range over a predetermined temperature gradient in the transmitter housing.
45. The transmitter of claim 34 wherein a process pressure range is greater than 1000 psi and a differential pressure range is less than 30 psi.
46. The transmitter of claim 34 wherein each pressure responsive structure is maintained at a substantially uniform temperature throughout.
47. The transmitter of claim 34 wherein there are joints between the pressure responsive structure and the stress isolating means and the joints are substantially free of foreign material.
48. The transmitted of claim 47 wherein the joints are fusion bonds.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/395,778 | 1995-02-28 | ||
| US08/395,778 US5637802A (en) | 1995-02-28 | 1995-02-28 | Capacitive pressure sensor for a pressure transmitted where electric field emanates substantially from back sides of plates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2212384A1 true CA2212384A1 (en) | 1996-09-06 |
Family
ID=23564468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002212384A Abandoned CA2212384A1 (en) | 1995-02-28 | 1996-02-22 | Pressure sensors and pressure transmitters |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US5637802A (en) |
| EP (1) | EP0812413A1 (en) |
| JP (1) | JP3723217B2 (en) |
| CN (1) | CN1176693A (en) |
| BR (1) | BR9607134A (en) |
| CA (1) | CA2212384A1 (en) |
| WO (1) | WO1996027123A1 (en) |
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-
1995
- 1995-02-28 US US08/395,778 patent/US5637802A/en not_active Expired - Fee Related
-
1996
- 1996-02-22 BR BR9607134A patent/BR9607134A/en not_active Application Discontinuation
- 1996-02-22 CA CA002212384A patent/CA2212384A1/en not_active Abandoned
- 1996-02-22 JP JP52635496A patent/JP3723217B2/en not_active Expired - Fee Related
- 1996-02-22 WO PCT/US1996/002522 patent/WO1996027123A1/en not_active Application Discontinuation
- 1996-02-22 CN CN96192225.7A patent/CN1176693A/en active Pending
- 1996-02-22 EP EP96906624A patent/EP0812413A1/en not_active Withdrawn
-
1997
- 1997-03-03 US US08/807,999 patent/US6089097A/en not_active Expired - Lifetime
-
1999
- 1999-03-26 US US09/277,249 patent/US6082199A/en not_active Expired - Lifetime
- 1999-06-30 US US09/345,165 patent/US6079276A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014066978A1 (en) * | 2012-10-29 | 2014-05-08 | MEMS-Vision International Inc. | Methods and systems for humidity and pressure sensor overlay integration with electronics |
Also Published As
| Publication number | Publication date |
|---|---|
| US5637802A (en) | 1997-06-10 |
| US6089097A (en) | 2000-07-18 |
| JPH11501123A (en) | 1999-01-26 |
| EP0812413A1 (en) | 1997-12-17 |
| BR9607134A (en) | 1997-11-25 |
| WO1996027123A1 (en) | 1996-09-06 |
| US6079276A (en) | 2000-06-27 |
| US6082199A (en) | 2000-07-04 |
| JP3723217B2 (en) | 2005-12-07 |
| CN1176693A (en) | 1998-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |