CA2223167C - Organic light emitting element and producing method thereof - Google Patents

Organic light emitting element and producing method thereof Download PDF

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Publication number
CA2223167C
CA2223167C CA002223167A CA2223167A CA2223167C CA 2223167 C CA2223167 C CA 2223167C CA 002223167 A CA002223167 A CA 002223167A CA 2223167 A CA2223167 A CA 2223167A CA 2223167 C CA2223167 C CA 2223167C
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light emitting
organic
film
emitting element
organic light
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CA2223167A1 (en
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Takahiro Nakayama
Shinya Kobayashi
Akira Shimada
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Hitachi Ltd
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Hitachi Ltd
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Priority claimed from JP9033580A external-priority patent/JPH10229243A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/852Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/876Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/872Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

An organic light emitting element including an organic thin film formed on a substrate. A peripheral side face of the organic thin film has such a sectional shape that emitted light in reflected by the side surface. The organic light emitting element ensures that light that proceeds in parallel to an organic thin film, which has been traditionally lost, can be effectively utilized.

Description

ORGANIC LIGHT EMITTING ELEMENT AND PRODUCING METHOD THEREOF
FIELD OF THE INVENTION
The present invention relates to an organic light emitting element, especially to an organic light element used in optical instruments using an optical device such as a light source for display, an optical circuit, an optical switch, an optical array, an optical communication element, a head for optical recording, and so forth.
BACKGROUND OF THE INVENTION
A resonator structure composed by sandwiching an organic light emitting thin film between two plane reflectors is used in a conventional electro-luminescence element which is disclosed, for example, in a paper titled "Investigations on Multicolor Display by Organic Luminescent Devices with Optical Microcavity Structure", by Nakayama, Tsunoda and Nagae, The Transaction of the Institute of Electronics, Information and Communication Engineers of Japan, J77-C-II, pp 437-443 (1994) .
In an organic electro-luminescence element using a conventional micro-resonator structure, a means for confining light proceeding in the direction parallel to an organic electro-luminescence film is not provided, and light proceeding in that direction is lost. This problem occurs similarly in an ordinary electro-luminescence element where an existing micro-resonator structure is not used.
A detailed explanation of why light that proceeds in the direction parallel to an organic electro-luminescence film
2 attenuates and disappears will be provided hereinbelow in conjunction with the drawings.
SUMMARY OF THE INVENTION
The first object of the present invention is to provide an organic emitting element wherein light proceeding in parallel to an organic thin film that has been ordinarily lost can be effectively utilized.
The second object is to provide an organic emitting element wherein a classical or quantum effect (correction of light emission enhancement due to the transition probability mechanism) brought by the confinement or resonance of light is applicable.
The third object is to provide a method of producing a highly pure organic thin film used in an organic emitting element. To attain the above objects, the present invention has the following features.
The first feature of the present invention is to provide an organic light emitting element including an organic thin film formed on a substrate, wherein a peripheral side face of the organic thin film has such a sectional shape that emitted light is reflected by the side surface.
The second feature is to provide an organic light emitting element including an organic thin film formed on a substrate, wherein the difference between a refraction index of the organic thin film and that of ambient substance outside the organic thin film is set to such that emitted light is
3 confined in the organic thin film by a peripheral side face of the organic thin film.
The third feature is to provide an organic light emitting element including an organic thin film formed on a substrate, wherein a peripheral side surface of the organic thin film stands, in a range of 50 % - 90 0 of the thickness of the organic thin film, perpendicular to the substrate.
The fourth feature is to provide an organic light emitting element, comprising a multilayer structure consisting of a translucent reflector film, a transparent electrode, a light emitting layer and a metal electrode, wherein an optical resonator is composed between the translucent reflector film and the metal electrode on the light emitting layer in the direction perpendicular to the organic light emitting layer, and a plurality of layer parts, each of the layer parts including the light emitting layer and the metal electrode, are separately arranged in a plane parallel to the substrate, respectively, and a distance between each pair of layer parts neighboring each other in the parts is larger than 1/4 of a wave length of light emitted in the light emitting element.
The fifth feature is to provide a method of producing an organic light emitting element including an organic thin film, the method comprising the steps of forming a metal thin film on the organic thin film, forming a mask of a desired pattern by physically or mechanically removing parts of the metal thin film, and applying dry etching processing to the organic thin film with the mask.
4 The sixth feature is to provide an organic light emitting element having a resonator structure in the direction perpendicular to a substrate of the light emitting element, the resonator structure being composed by sandwiching an organic thin film in the light emitting element between two reflectors, the organic light emitting element comprising one of a line layer structure and a dot layer structure in the organic thin film and a part of thin films formed on the top face and bottom face of the organic thin film, in which line layers or dot layers are periodically arranged in parallel to the organic thin film, wherein each two line layers neighboring each other or each two dot layers neighboring each other have different material composition or material structure, and the period of the arrangement, which is represented by an optical length expressed as a geometrical length x a refraction index in material of each layer, is substantially 1/4 of a wave length of light emitted in the organic thin film.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a sectional view of an organic electro-luminescence (light emitting) element having a micro-resonator structure, of which a peripheral side face is processed.
Fig. 2 is a diagram showing compositions of examples of material used in the organic thin film shown in Fig. 1.
Fig. 3 is a graph showing light transmission characteristics of a translucent reflection layer used in the organic electro-luminescence element.

Fig. 4 is a conceptual illustration for showing a cutting process for producing the organic electro-luminescence element according to the present invention.
Fig. 5 is a scanning tunnelling microscope (STM) image
5 of a sectional face of an organic electro-luminescence element that was cut by a cutting process.
Fig. 6 is a scanning electron microscope (SEM) image of a sectional face of an organic electro-luminescence element that was etched by an etching process.
Fig. 7 shows sectional views of light emitting elements of which depths formed by the etching process are different from each other, and diagrams (a), (b) and (c) in Fig. 7 show sectional views of the light emitting elements, which are etched in their depth to the bottom surface of the organic thin film, to the bottom surface of an ITO film, and to the bottom surface of a translucent reflection film, respectively.
Fig. 8 is a sectional view of an element in which by forming an insulation film on an organic light emitting element, further covering over the insulation film with a metal reflection film, the effect of light reflection by a side face is further improved.
Figs. 9A and 9B show sectional views of organic light emitting elements having a three-dimensional light confinement structure, and a two-dimensional light confinement structure, respectively.
Figs 10A, lOB and lOC show features of an optical device of an embodiment according to the present invention, and show a sectional view of the device, a composition of matrix type
6 electrodes of the device, and a partial perspective diagram of the optical device, respectively.
Fig. 11 is a diagram conceptually showing a composition of an apparatus for forming an organic thin film.
Fig. 12 is an enlarged sectional view of the peripheral side part in an organic thin film.
Fig. 13 is an illustration for showing a composition of an organic light emitting element having a micro-resonator structure wherein a light emitting layer has a structure of a periodically arranged line layer pattern.
Fig. 14 is an illustration for explaining a method of producing a periodically arranged line or dot layer minute pattern.
Fig. 15 is an illustration for showing a composition of an organic light emitting element having a micro-resonator structure wherein a light emitting layer has a structure of a periodically arranged dot layer pattern.
Fig. 16 is an illustration for showing a composition of an organic light emitting element having a micro-resonator structure wherein a light emitting layer has a structure of a periodically arranged layer pattern in the direction perpendicular to the substrate, in addition to the direction parallel to the substrate.
Fig. 17 is a graph showing the relationship between a luminescent intensity peak ratio of emitted light and an optical length of a resonator or a periodical line type layer (optical length of a resonator or a periodical line type layer / a wave length of emitted light.)
7 Fig. 18 is an illustration for showing a composition of an organic electro-luminescence element having a micro-resonator structure wherein a structure of a periodically arranged line layer pattern is formed at a light emitting layer.
DETAILED DESCRIPTION OF THE EMBODIMENTS OF THE PRESENT
INVENTION
In conjunction with the drawings, it will be explained why light proceeding in the direction parallel to an organic electro-luminescence film attenuates and is lost.
At first, with reference to Fig. 11, a method of producing an organic light emitting element is explained.
Reference mark A indicates a substrate of the organic light emitting element, and a film B is formed by using a vapor deposition method with an organic material. Regions to be masked from vapor deposition of organic material vaporized in a vapor deposition source D are masked by a metal mask C.
In the vapor deposition apparatus shown in Fig. 11, a very narrow gap, which can be observed by an optical microscope, exists between an edge of the mask C and a surface of a growing organic thin film. The gap is generated by unevenness of the substrate A, a bend in the mask C, the roundish shape of the edge part in the mask C, etc . . Assuming that the width of the gap is 0 . 1 mm (= 100 ~.m) , and the visual angle of the vapor deposition source D viewed from the edge part is 2 deg., the variation in a growing length of the thin film.is 3.5 ~m (=100 ~m x tan (2 deg.)).
8 That is, the thickness of the thin film changes from 100 0 to Oo in the interval of 3.5 ~.m.
Since the thickness of an organic thin film such as one used for an organic light emitting element is about 0.1 ~.m, the ratio of the thickness of the film to the thickness changing interval is 1/35.
Therefore, if the film is formed by the vapor deposition method with the mask, the angle of the edge part in the film is 1.6 deg. (=arctan (1/35)) as shown in Fig. 12.
Light that enters the edge part of the thin film proceeds as it is repeatedly reflected by inner faces of the film as shown in Fig. 12, attenuates and finally extinguishes.
In general, Fig. 1 shows a composition of an organic light emitting element having a micro-resonator structure according to an embodiment of the present invention. Shaping a peripheral side face of the organic light emitting element by removing a part outside an area to be formed as a light emitting element is carried out to an intermediate position in the thickness of a transparent electrode film 103. In Fig. 1, a laminated two layer type p/n EL (Electro-Luminescence) element composed of a light emitting layer and a hole transport layer is shown. However, a one layer type or more than 2 layer type organic light emitting element, where functions of the above-mentioned two organic layers are integrated into one organic layer, or shared to more than two organic layers, has been reported. These types of organic light emitting elements can also be used in the present invention.
9 In Fig. 1, a translucent film 102 made of titanium oxide or silicon dioxide is formed on a glass substrate 101, and a transparent electrode 103 , a hole transport layer 104 , a light emitting layer 105 and a metal back surface electrode 106 are layered in turn on the translucent film 102. As the above material, the material described in the above-mentioned paper presented in the Transaction of the Institute of Electronics, Information and Communication Engineers C-II, J77-C-II, 437 (1994), by the inventor of the present invention, etc., can be used, and other kinds of material having properties similar to those of the above material can also be used in the present invention.
Furthermore, a feature of the present invention is that a peripheral side face of the organic thin film is shaped such that the side face functions as a translucent reflector realized by the difference between a refraction index of the organic thin film and that of ambient substance outside the organic thin film, and light emitted in the organic thin film is reflected into the inside of the organic thin film by the side face. The attenuation and the extinction of emitted light is prevented by forming the above-mentioned interval in which the thickness of the organic thin film gradually changes, as small as possible, and confining the emitted light in the organic thin film.
The light emitting layer 105 and the hole transport layer 104 are made of, for example, aluminum chelate (ALQ) and triphenyl-diamine (TAD), respectively. The chemical structures of .ALQ and TAD are shown in Fig. 2. The transmittance of a dielectric translucent reflection film 102 of a 6-layer laminated film composed of titanium oxide layers and silicon dioxide layers is illustrated in Fig. 3. In the region of the wave length greater than 400 nm, light which is 5 not transmitted in the translucent reflection film 102 is almost reflected by the translucent reflection film 102.
The organic light emitting element according to the present invention is produced by a cutting process and a dry etching process. In the cutting process, a sharp edge of a
10 cutting device, made of glass, etc., is operated at a surface of a formed metal back surface electrode 106 in an organic light emitting element. The cutting process is typically illustrated in Fig. 4. An electron microscope sectional image of the light emitting element for which the cutting process is performed is shown in Fig. 5. An electron microscope sectional image of the light emitting element for which the dry etching process is performed is shown in Fig. 6. The etching conditions are indicated in Table 1. As shown in Fig.
5 and Fig.6, the part outside the section designed to be left remaining, of the organic thin film, was removed by the etching process, and a periphery side face of the remaining organic thin film part was finely shaped.
Table 1 Gas CFI ( 10% ) + OZ ( 90% ) Pressure 2 Pa RF power 200 W
11 In Fig. 5 and Fig. 6, QUARTZ indicates the glass substrate 101, ITO indicates the transparent electrode 103, TAD indicates the hole transport layer 104, ALQ indicates the light emitting layer 105, and ALLELE indicates the metal back surface electrode 106.
The above-mentioned methods of producing an organic light emitting element can be produced without using chemical substances such as resist . To bring an organic EL element fully in effect, it is important to keep the high purity of the organic thin film material. Mixing of very small impurities deteriorates the performance of an organic EL
element in the extreme. Moreover, since the thickness of an organic thin film is about 100 nm, and its volume is also very small, diffusion mixing of very small impurities from substances such as resist largely degrades the performance of the organic thin film. The above-mentioned methods can solve this problem of impurity. Furthermore, the production cost of an organic light emitting element can be reduced by using a cutting device exclusive to a masking pattern in comparison with a production method using resist.
The accuracy of a micro-cutting process depends on the accuracy of moving an edge of a cutter, or driving a substrate. By applying a micro-control technique used to control a stage position in STM (Scanning Tunnelling Microscope) and SEM (Scanning Electron Microscope), the accuracy of a micro-cutting at a level of microns or less is possible.
12 It is desirable that the peripheral side face. of an organic thin film be perpendicular to the surface of the substrate. However, if the peripheral side face of the organic thin film, in a range of about 40 % - 90 0 of the thickness of the organic thin film, is perpendicular to the surface of the substrate, light emitted in the organic thin film can be sufficiently reflected by the peripheral side face (i.e. can be confined in the organic thin film).
Figs. 7A, 7B and 7C show sectional views of light emitting elements having various depths formed by the etching process. Fig. 7A shows a sectional view of a light emitting element, which is etched in its depth to the bottom surface of the layer 104, Fig. 7B shows a sectional view of a light emitting element, which is etched in its depth to the bottom surface of the ITO film 103, and Fig. 7C shows a sectional view of a light emitting element, which is etched in its depth to the bottom surface of the translucent reflection film 102.
In selecting one of these elements, an element which is optimal to an object in using an organic light emitting element is selected by considering production cost and the effect of light reflection by the side face. In order to etch an organic light element deeply, it is necessary to use the metal back surface electrode film of a large thickness or low etching speed type material as the electrode film, or to mount a layer of low etching speed type material on the electrode and cut the mounted layer and the electrode film together.
As shown in Fig. 8, by forming an insulation film on an organic light emitting element, further covering over the
13 insulation film with a metal reflection film, the effect of light reflection by the side face is further improved.
Fig. 9A is a perspective view of organic light emitting elements having a three-dimensional light confinement structure, and Fig. 9B is a perspective view of an organic light emitting element having a two-dimensional light confinement structure.
Fig. 13 shows an organic thin film light emitting element having a resonator structure provided in the direction perpendicular to the thin film, and including a translucent reflection film composed of a laminated dielectric multilayer thin film. In Fig. 13, numerals 401, 402, (403A, 403B) and 404 indicate a glass substrate, a translucent reflection film of a laminated 6 layer film composed of titanium oxide layers and silicon dioxide layers, an organic light emitting thin film, and a metal back surface electrode made of Al:Li alloy.
The organic light emitting thin film (403A and 403B) has a periodically arranged line type layer structure. In Fig. 13, the structure of the organic light emitting thin film (403A
and 403B) is separately shown. The metal back surface electrode 404 is formed at the top of the organic light emitting thin film (403A and 403B) by a vapor deposition method, after the light emitting thin film having the periodically arranged line layer structure is formed. By irradiating the light emitting thin film with ultra-violet light, the layer is excited, and it emits visual light.
Fig. 15 is an illustration for showing a composition of a light emitting element wherein an organic light emitting
14 thin film has a structure of a periodically arranged dot layer pattern. In a light emitting layer having a structure of a periodically arranged line layer pattern, only light proceeding to the direction perpendicular to each line is reflected. On the other hand, in a light emitting thin film having a structure of a periodically arranged dot layer pattern, light proceeding to the direction and perpendicular to each other is reflected.
Fig. 16 is an illustration for showing a composition of a light emitting element wherein an organic light emitting thin film has a structure of a periodically arranged layer pattern in the direction perpendicular to the substrate, in addition to the direction parallel to the substrate. This structure of the organic light emitting thin film is formed by repeatedly applying a series of processes of forming an organic thin film and processing of a periodically arranged layer pattern, in the direction perpendicular to the substrate.
In Fig. 14, a minute processing of a substance, for which light sent through an optical fiber is used, is typically and conceptually illustrated. In the minute processing, light sent through an optical fiber is taken out from an aperture of the top in the fiber. If the size of the aperture is as small as 1/4 of a wave length of the light, usual light can not proceed out of the aperture. In this situation, light can exist only at a very small local area of the size of about 1/4, which is termed the near-field, generated in the vicinity of the outside of the aperture. It has been reported in App.

' Phys. lett. 61, p. 142 that by moving the aperture of the top in the fiber, a substance can be minutely processed by the light at the near-field.
By forming the above-mentioned structures for confining 5 emitted light in a light emitting thin film, a light resonator is composed-in a light emitting element. It is possible to compose a light emitting element that a classical or quantum effect (correction of light emission enhancement due to the transition probability mechanism) due to the light confinement 10 or resonance is applied to the light emitting element.
Naturally, since the effect of light reflection by the side face becomes relatively larger as a surface area of a light emitting element decreases and the effect of the shape in the side face according to the present invention also becomes
15 larger.
It is necessary to set a distance between two light emitting elements neighboring each other to more than 1/4 of a wave length ~ of emitted light, which the etching process were performed for, and are shown in Figs. 7A - 7C, Fig. 8 and Fig. 9A.
The reason why the distance of more than 1/4 of a wave length ~ is necessary is because light leaking from a light emitting element reaches the positions apart from the element by 1/4 of ~, and leakage lights from light emitting elements neighboring each other interfere with each other.
It is well known that in many kinds of organic material, combining between molecules is generated, or decomposition or phase changes such as crystallization occur, by receiving
16 energy such as light, heat, etc. The above-mentioned physical or chemical changes in organic material often cause the change of a refraction index. Therefore, it is possible to embed layers having a function of a translucent reflector in an organic light emitting thin film by forming a periodically arranged line or dot layer pattern in the organic thin film at a periodical length of 1/4, 3/4, 5/4 and so on, of a wave length of emitted light, by making use of the change of a refraction index due to the physical or chemical change of the organic thin film. By those periodically formed layers, light proceeding in the direction perpendicular to each line layer or each dot layer is reflected and confined.
This light confinement arrangement is effective, especially to an organic light emitting element having a resonator structure formed by providing two reflector films such as a laminated dielectric multilayer reflection film, at the top and bottom surfaces of an organic light emitting thin film.
In both of the directions parallel and perpendicular to the substrate, the largest effect of the light confinement can be obtained, if the periodic optical length which is expressed as a geometrical length x a refraction index in material, of the embedded reflector layers in the organic thin film, is 1/4 of a wave length of emitted light. Moreover, the largest effect of the light confinement can be obtained, if the depth of the resonator is 1/4 or 1/2 of a wave length. The total amount of phase shift due to .light reflection by the reflector films is one or 1/2 of a wave length, which depth of 1/4 or
17 1/2 of a wave length brings the largest effect. A periodic length or a depth larger by 1/2 of a wave length than the above-mentioned optimal periodic length or depth can satisfy the light confinement or resonance conditions.
There is a practical upper limit to an effective periodic length or a depth of a resonator, which is brought by the unevenness of surfaces or boundary faces in the resonator and the periodically arranged layers in the organic light emitting thin film. That is, as the periodic length or the depth of a resonator increases, a quantum effect such as a micro-resonator effect decreases, and the strength of the resonance becomes weak, which is caused by the unevenness of surfaces in the resonator. Fig. 17 is a graph showing the relation between a relative peak strength of emitted light and a relative optical length of a resonator or a line type layer.
As seen in Fig. 17, it is necessary to compose the optical length or depth of less than 10 times of a wave length in order to obtain more than 10% effect related with the peak strength.
An organic light emitting thin film having a periodically arranged line or dot layer structure functions as a translucent reflector, and reflects light with a definite ratio into the inside of the thin film.
Fig. 10A shows a luminescence panel using organic EL
elements that have the three-dimensional light confinement structure. Each of the organic EL elements have the same composition as that of the organic light emitting element shown in Fig. 1. Numerals 101, 101A and 102, indicate two.
18 glass substrates, and a translucent reflection film of a laminated 6-layer film made of titanium oxide and silicon dioxide, respectively. Moreover, numerals 103, 104, 105 and 106, indicate transparent electrodes made of indium-tin oxide (ITO), which have the thickness of 200 nm, hole transport layers made of triphenyl-diamine (TAD), which have the thickness of 50 nm, light emitting layers made of aluminum chelate (ALQ), which have the thickness of 50 nm, metal back surface electrodes made of aluminum-lithium alloy (allele), which have the thickness of 200 nm. The two substrates 101 and 101A are adhered to each other with adhesive 302, and the light emitting elements are contained in a space 301 between the two substrates 101 and 101A. Dry nitrogen gas is enclosed in the space 301.
As shown in Fig. 10B, by using the transparent front surface electrodes 103 and the metal back surface electrodes 303, matrix type electrodes are composed, and light emitting parts are selected. Projecting parts 304 are made of soft metal as In formed on the electrodes 303, and the transparent front surface electrodes 106 and the metal back surface electrodes 303 are pressurized and connected to each other via the projecting parts 304. In this composition, an insulation part is necessary to prevent the electrodes 103 from contacting the electrodes 303 at the places other than the luminescence pixel parts.
The number of organic light emitting elements arranged at each of the element areas, the electrodes 303 and the electrodes 103 intersecting each other at the element areas
19 - as shown in Fig. 10B, is not restricted to one, but more than one organic light emitting element can be arranged at each of the element areas. In an embodiment shown in Fig. 10C, two light emitting elements are arranged at each of the element areas.
Fig. 18 is a sectional view of an organic light emitting element according to an embodiment according to the present invention. In the organic light emitting element shown in Fig. 18, a laminated 6-layer thin film composed of titanium oxide layers (the thickness of each layer is 54 nm) and silicon dioxide layers (the thickness of each layer is 86 nm) is used as a dielectric translucent reflection film.
Moreover, in Fig. 18, the chemical structure of polyacetylene derivative is shown, which is used for an organic light emitting layer. The refraction index of a polyacetylene film can be changed by growing the principal chain of carbon bonding in polyacetylene derivative using photoreaction processing. The spectrum of light emitted by polyacetylene derivative can be changed by changing the kinds of molecules that are combined to branches of the polyacetylene derivative .
The thickness of the metal back surface electrode 404 is 200 nm. Moreover, numeral 405 indicates a transparent electrode made of ITO, of which thickness of 200 nm. By applying the voltage between the electrodes 404 and 405, electrons and holes are injected into the light emitting layer, and those are recombined, to further excite the organic material of the layer. Thus, light is emitted from the excited organic material.

Although an example of an EL (electro-luminescence) element of one layer type element structure is explained in Fig. 18, a report of a two layer type or more than 2 layer type EL element, which functions of the above-mentioned one 5 layer type element are shared to two or more organic layers, has been presented, and those type EL elements are also applicable to the present invention.
In accordance with the present invention, since light emitted in a light emitting thin film is reflected into the 10 inside of the layer by a peripheral side face of the shape formed according to the present invention at a definite ratio of the quantity of light reflected by the side face to the quantity of light reaching the side face, the lost quantity of emitted light can be reduced, and the total quantity of 15 effective light output from the front surface of the light emitting thin film can be increased. That is, the ratio of the quantity of light output from a light emitting element to the quantity of energy input into the light emitting element is improved. By forming the above-mentioned structures for
20 confining emitted light in a light emitting film, it is possible to compose such an organic light emitting element that a light resonator is composed, and a classical or quantum effect (correction of light emission enhancement due to the transition probability mechanism) due to the light confinement or the light resonance can be applied to the light emitting element.

Claims (18)

CLAIMS:
1. An organic light emitting element stacked with thin films formed standing on a substrate including an organic thin film, wherein said light emitting element and said substrate are formed so that an angle between a vertical-direction outside surface of said organic thin film and said substrate is larger than a fully reflecting angle of emitted light in said organic thin film.
2. An organic light emitting element stacked with thin films formed standing on a substrate including an organic thin film formed on said substrate, wherein the difference between a refraction index of said organic thin film and that of ambient substance outside said organic thin film is fabricated so such that emitted light does not leak out from said organic thin film.
3. An organic light emitting element stacked with thin films formed standing on a substrate including an organic thin film formed with a side surface being in a range of 50 % - 90 % of a total thickness of said organic thin film, wherein said organic light emitting element and said substrate are formed so that an angle between a vertical-direction outside surface of said organic thin film and the substrate is 90° in said angle between a vertical-direction outside surface of said side surface of said organic film.
4. An organic light emitting element stacked with thin films formed standing on a substrate including a transparent film, a transparent electrode, a light emitting layer and a metal electrode, which are layered, wherein a side face of a layer part is 50 % - 90 % of the total thickness of said part, said light emitting element and said substrate are formed so that an angle between a vertical-direction outside surface of said layer part and the substrate is 90.DELTA. in said side face of said layer part.
5. An organic light emitting element including a transparent electrode, a light emitting layer and a metal electrode, which are layered, wherein a plurality of layer parts, each of said layer parts including said light emitting layer and said metal electrode, are separately arranged in a plane parallel to said substrate, respectively, and a distance between each two parts neighboring each other in said parts is larger than 1 / 4 of a wave length of light emitted in said light emitting element.

22a
6. An organic light emitting element stacked with thin films formed standing on a substrate, comprising:
a translucent reflector made of one of a laminated dielectric film and a translucent metal film, formed at one side of an organic light emitting film, an optical resonator being composed between said reflector and an upper electrode on said organic light emitting film in a direction perpendicular to said organic light emitting film;
wherein said organic light emitting element and said substrate are formed so that an angle between a vertical-direction outside surface of said organic light emitting film and the substrate is larger than a fully reflecting angel of emitted light in said organic layer.
7. An organic light emitting element, comprising:
a translucent reflector made of one of a laminated dielectric film and a translucent metal film, formed at the front side of an organic light emitting film, an optical resonator being composed between said reflector and an upper electrode on said organic light emitting film in the direction perpendicular to said organic light emitting film;
wherein the difference between a refraction index of said organic light emitting film and that of ambient substance outside said organic light film is set to such that emitted light is confined in said organic light emitting film by a peripheral side face of said organic light emitting film.
8. An organic light emitting element, comprising:
a translucent reflector made of one of a laminated dielectric film and a translucent metal film, formed at the front side of an organic light emitting film, an optical resonator being composed between said reflector and an upper electrode formed on said organic light emitting film in the direction perpendicular to said organic light emitting film;
wherein a peripheral side surface of said organic light emitting film stands, in a range of 50 % - 90 % of the thickness of said organic light emitting film, perpendicular to said substrate.
9. An organic light emitting element, comprising:
a multilayer of a translucent reflector film, a transparent electrode, a light emitting layer and a metal electrode;
wherein an optical resonator is composed between said translucent reflector film and said metal electrode formed on said light emitting layer in the direction perpendicular to said organic light emitting layer, and a peripheral side face of a layer part composed of said light emitting layer and said metal electrode, in a range of 50 % - 90 % of the total thickness of said layer part, stands perpendicular to said substrate of said light emitting element.
10. An organic light emitting element, comprising:
a multilayer of a translucent reflector film, a light emitting layer and a metal electrode;
wherein an optical resonator is composed between said translucent reflector film and said metal electrode on said light emitting layer in the direction perpendicular to said organic light emitting layer, and a plurality of layer parts, each of said layer parts including said light emitting layer and said metal electrode, are separately arranged in a plane parallel to said substrate, respectively, and a distance between each pair of layer parts neighboring each other in said parts is larger than 1 /4 of a wave length of light emitted in said light emitting element.
11. A method of producing an organic light emitting element including an organic thin film, said method comprising the steps of:
forming a metal thin film on said organic thin film;
forming a mask of a desired pattern by physically or mechanically removing parts of said metal thin film; and applying dry etching processing to said organic thin film with said mask.
12. A method according to claim 11, further including the step of utilizing said mask remaining on said etched organic thin film as electrodes.
13. An organic light emitting element having a resonator structure in the direction perpendicular to a substrate of said light emitting element, said resonator structure being composed by sandwiching an organic thin film in said light emitting element between reflectors, said organic light emitting element comprising:
one of a periodical line layer structure and a periodical dot layer structure in said organic thin film and a part of thin films formed on the top face and bottom faces of the organic thin film, in which line layers or dot layers are periodically arranged in parallel to said organic thin film, wherein each two line layers neighboring each other or each two dot layers neighboring each other have different material compositions or material structures, and a period of said layer arrangement, which is represented by an optical length expressed as a geometrical length X a refraction index in material of each layer, is substantially 1 / 4 of a wave length in each layer, of light emitted in said organic thin film.
14. An organic light emitting element according to claim 13, wherein said period is ( 1 + 2m ) / 4 of a wave length of light in each layer, where m is an integer taking a value in a range 1 to 19.
15. An organic light emitting element according to claim 14, wherein said periodical layer structure is formed by using a near-field light.
16. An organic light emitting element according to claim 14, further including a translucent reflector and a transparent conductive film, composed of dielectric multilayer films, wherein said organic thin film emits light by applying voltage to said organic thin film.
17. An organic light emitting element according to claim 14, wherein said periodical structure composes one of two-dimensional and three-dimensional resonators by making use of light reflection due to different refraction indexes in each two layers neighboring each other.
18. An organic light emitting element stacked with thin films formed standing on a substrate, including an organic thin film, wherein said organic light emitting element and said substrate are so formed that an angle between a vertical-direction outside surface of said organic thin film and the substrates is 90°
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