US20050280155A1
(en)
*
|
2004-06-21 |
2005-12-22 |
Sang-Yun Lee |
Semiconductor bonding and layer transfer method
|
US8058142B2
(en)
|
1996-11-04 |
2011-11-15 |
Besang Inc. |
Bonded semiconductor structure and method of making the same
|
US8018058B2
(en)
*
|
2004-06-21 |
2011-09-13 |
Besang Inc. |
Semiconductor memory device
|
DE69728022T2
(en)
*
|
1996-12-18 |
2004-08-12 |
Canon K.K. |
A method of manufacturing a semiconductor article using a substrate with a porous semiconductor layer
|
SG71094A1
(en)
|
1997-03-26 |
2000-03-21 |
Canon Kk |
Thin film formation using laser beam heating to separate layers
|
CA2233096C
(en)
|
1997-03-26 |
2003-01-07 |
Canon Kabushiki Kaisha |
Substrate and production method thereof
|
SG68035A1
(en)
|
1997-03-27 |
1999-10-19 |
Canon Kk |
Method and apparatus for separating composite member using fluid
|
US20070122997A1
(en)
|
1998-02-19 |
2007-05-31 |
Silicon Genesis Corporation |
Controlled process and resulting device
|
FR2773261B1
(en)
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
METHOD FOR THE TRANSFER OF A THIN FILM COMPRISING A STEP OF CREATING INCLUSIONS
|
SG87916A1
(en)
|
1997-12-26 |
2002-04-16 |
Canon Kk |
Sample separating apparatus and method, and substrate manufacturing method
|
DE19803013B4
(en)
*
|
1998-01-27 |
2005-02-03 |
Robert Bosch Gmbh |
A method for detaching an epitaxial layer or a layer system and subsequent application to an alternative support
|
JP3697106B2
(en)
*
|
1998-05-15 |
2005-09-21 |
キヤノン株式会社 |
Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film
|
JP3619058B2
(en)
*
|
1998-06-18 |
2005-02-09 |
キヤノン株式会社 |
Manufacturing method of semiconductor thin film
|
US6180497B1
(en)
*
|
1998-07-23 |
2001-01-30 |
Canon Kabushiki Kaisha |
Method for producing semiconductor base members
|
TW522488B
(en)
|
1998-07-27 |
2003-03-01 |
Canon Kk |
Sample processing apparatus and method
|
US6344375B1
(en)
*
|
1998-07-28 |
2002-02-05 |
Matsushita Electric Industrial Co., Ltd |
Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same
|
EP0989616A3
(en)
*
|
1998-09-22 |
2006-05-10 |
Canon Kabushiki Kaisha |
Method and apparatus for producing photoelectric conversion device
|
JP2000124092A
(en)
*
|
1998-10-16 |
2000-04-28 |
Shin Etsu Handotai Co Ltd |
Manufacture of soi wafer by hydrogen-ion implantation stripping method and soi wafer manufactured thereby
|
JP2000124341A
(en)
*
|
1998-10-21 |
2000-04-28 |
Sony Corp |
Semiconductor device and its manufacture
|
JP2000349264A
(en)
|
1998-12-04 |
2000-12-15 |
Canon Inc |
Method for manufacturing, use and utilizing method of semiconductor wafer
|
US20040229443A1
(en)
*
|
1998-12-31 |
2004-11-18 |
Bower Robert W. |
Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials
|
US20050124142A1
(en)
*
|
1998-12-31 |
2005-06-09 |
Bower Robert W. |
Transposed split of ion cut materials
|
JP2000223683A
(en)
*
|
1999-02-02 |
2000-08-11 |
Canon Inc |
Composite member and its isolation method, laminated substrate and its isolation method, relocation method of relocation layer, and method for manufacturing soi substrate
|
US6410436B2
(en)
*
|
1999-03-26 |
2002-06-25 |
Canon Kabushiki Kaisha |
Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
|
KR100434537B1
(en)
*
|
1999-03-31 |
2004-06-05 |
삼성전자주식회사 |
Multi layer wafer with thick sacrificial layer and fabricating method thereof
|
FR2794893B1
(en)
*
|
1999-06-14 |
2001-09-14 |
France Telecom |
PROCESS FOR PRODUCING A SILICON SUBSTRATE HAVING A THIN LAYER OF BURIED SILICON OXIDE
|
US6162702A
(en)
*
|
1999-06-17 |
2000-12-19 |
Intersil Corporation |
Self-supported ultra thin silicon wafer process
|
FR2795866B1
(en)
|
1999-06-30 |
2001-08-17 |
Commissariat Energie Atomique |
METHOD FOR PRODUCING A THIN MEMBRANE AND MEMBRANE STRUCTURE THUS OBTAINED
|
US6452091B1
(en)
*
|
1999-07-14 |
2002-09-17 |
Canon Kabushiki Kaisha |
Method of producing thin-film single-crystal device, solar cell module and method of producing the same
|
JP2001160540A
(en)
|
1999-09-22 |
2001-06-12 |
Canon Inc |
Producing device for semiconductor device, liquid phase growing method, liquid phase growing device and solar battery
|
JP2001094136A
(en)
|
1999-09-22 |
2001-04-06 |
Canon Inc |
Method for manufacturing semiconductor element module and solar cell module
|
TW508690B
(en)
|
1999-12-08 |
2002-11-01 |
Canon Kk |
Composite member separating method, thin film manufacturing method, and composite member separating apparatus
|
JP4450126B2
(en)
*
|
2000-01-21 |
2010-04-14 |
日新電機株式会社 |
Method for forming silicon crystal thin film
|
US6602767B2
(en)
*
|
2000-01-27 |
2003-08-05 |
Canon Kabushiki Kaisha |
Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
|
JP3580227B2
(en)
*
|
2000-06-21 |
2004-10-20 |
三菱住友シリコン株式会社 |
Composite substrate separation method and separation device
|
JP4502547B2
(en)
*
|
2000-08-07 |
2010-07-14 |
日東電工株式会社 |
Method and apparatus for removing protective tape of semiconductor wafer
|
JP3556916B2
(en)
*
|
2000-09-18 |
2004-08-25 |
三菱電線工業株式会社 |
Manufacturing method of semiconductor substrate
|
KR100586241B1
(en)
*
|
2000-10-28 |
2006-06-02 |
엘지.필립스 엘시디 주식회사 |
An array substrate for liquid crystal display device and method of manufacturing there of
|
US7407869B2
(en)
*
|
2000-11-27 |
2008-08-05 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
|
FR2894990B1
(en)
*
|
2005-12-21 |
2008-02-22 |
Soitec Silicon On Insulator |
PROCESS FOR PRODUCING SUBSTRATES, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED BY SAID PROCESS
|
US8507361B2
(en)
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
FR2840731B3
(en)
*
|
2002-06-11 |
2004-07-30 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING A SUBSTRATE HAVING A USEFUL LAYER OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL OF IMPROVED PROPERTIES
|
FR2817395B1
(en)
*
|
2000-11-27 |
2003-10-31 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY
|
FR2817394B1
(en)
*
|
2000-11-27 |
2003-10-31 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY
|
US6774010B2
(en)
*
|
2001-01-25 |
2004-08-10 |
International Business Machines Corporation |
Transferable device-containing layer for silicon-on-insulator applications
|
JP2002229473A
(en)
*
|
2001-01-31 |
2002-08-14 |
Canon Inc |
Manufacturing method for display device
|
JP4803884B2
(en)
|
2001-01-31 |
2011-10-26 |
キヤノン株式会社 |
Method for manufacturing thin film semiconductor device
|
JP4708577B2
(en)
|
2001-01-31 |
2011-06-22 |
キヤノン株式会社 |
Method for manufacturing thin film semiconductor device
|
US6468824B2
(en)
*
|
2001-03-22 |
2002-10-22 |
Uni Light Technology Inc. |
Method for forming a semiconductor device having a metallic substrate
|
TW574753B
(en)
*
|
2001-04-13 |
2004-02-01 |
Sony Corp |
Manufacturing method of thin film apparatus and semiconductor device
|
FR2823596B1
(en)
|
2001-04-13 |
2004-08-20 |
Commissariat Energie Atomique |
SUBSTRATE OR DISMOUNTABLE STRUCTURE AND METHOD OF MAKING SAME
|
FR2823599B1
(en)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
DEMOMTABLE SUBSTRATE WITH CONTROLLED MECHANICAL HOLDING AND METHOD OF MAKING
|
US6717213B2
(en)
*
|
2001-06-29 |
2004-04-06 |
Intel Corporation |
Creation of high mobility channels in thin-body SOI devices
|
JP2003017667A
(en)
*
|
2001-06-29 |
2003-01-17 |
Canon Inc |
Method and device for separating member
|
JP2003017668A
(en)
*
|
2001-06-29 |
2003-01-17 |
Canon Inc |
Method and device for separating member
|
TW564471B
(en)
|
2001-07-16 |
2003-12-01 |
Semiconductor Energy Lab |
Semiconductor device and peeling off method and method of manufacturing semiconductor device
|
JP2003109773A
(en)
*
|
2001-07-27 |
2003-04-11 |
Semiconductor Energy Lab Co Ltd |
Light-emitting device, semiconductor device and its manufacturing method
|
JP5057619B2
(en)
|
2001-08-01 |
2012-10-24 |
株式会社半導体エネルギー研究所 |
Method for manufacturing semiconductor device
|
FR2828428B1
(en)
*
|
2001-08-07 |
2003-10-17 |
Soitec Silicon On Insulator |
DEVICE FOR PICKING UP SUBSTRATES AND ASSOCIATED METHOD
|
TW554398B
(en)
|
2001-08-10 |
2003-09-21 |
Semiconductor Energy Lab |
Method of peeling off and method of manufacturing semiconductor device
|
TW558743B
(en)
|
2001-08-22 |
2003-10-21 |
Semiconductor Energy Lab |
Peeling method and method of manufacturing semiconductor device
|
SG139508A1
(en)
*
|
2001-09-10 |
2008-02-29 |
Micron Technology Inc |
Wafer dicing device and method
|
SG102639A1
(en)
*
|
2001-10-08 |
2004-03-26 |
Micron Technology Inc |
Apparatus and method for packing circuits
|
TW594947B
(en)
*
|
2001-10-30 |
2004-06-21 |
Semiconductor Energy Lab |
Semiconductor device and method of manufacturing the same
|
US6656528B2
(en)
*
|
2001-11-16 |
2003-12-02 |
Dalsa Semiconductor Inc. |
Method of making specular infrared mirrors for use in optical devices
|
TWI264121B
(en)
|
2001-11-30 |
2006-10-11 |
Semiconductor Energy Lab |
A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
|
KR20050044643A
(en)
*
|
2001-12-04 |
2005-05-12 |
신에쯔 한도타이 가부시키가이샤 |
Pasted wafer and method for producing pasted wafer
|
US6638835B2
(en)
*
|
2001-12-11 |
2003-10-28 |
Intel Corporation |
Method for bonding and debonding films using a high-temperature polymer
|
JP3968566B2
(en)
*
|
2002-03-26 |
2007-08-29 |
日立電線株式会社 |
Nitride semiconductor crystal manufacturing method, nitride semiconductor wafer, and nitride semiconductor device
|
FR2839199B1
(en)
*
|
2002-04-30 |
2005-06-24 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING SUBSTRATES WITH DETACHMENT OF A TEMPORARY SUPPORT, AND ASSOCIATED SUBSTRATE
|
EP1363319B1
(en)
*
|
2002-05-17 |
2009-01-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of transferring an object and method of manufacturing a semiconductor device
|
KR100476901B1
(en)
*
|
2002-05-22 |
2005-03-17 |
삼성전자주식회사 |
Method of forming SOI(Silicon-On-Insulator) semiconductor substrate
|
SG142115A1
(en)
*
|
2002-06-14 |
2008-05-28 |
Micron Technology Inc |
Wafer level packaging
|
US6953736B2
(en)
|
2002-07-09 |
2005-10-11 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Process for transferring a layer of strained semiconductor material
|
FR2842349B1
(en)
*
|
2002-07-09 |
2005-02-18 |
|
TRANSFERRING A THIN LAYER FROM A PLATE COMPRISING A BUFFER LAYER
|
TWI272641B
(en)
*
|
2002-07-16 |
2007-02-01 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
FR2842647B1
(en)
*
|
2002-07-17 |
2004-09-17 |
Soitec Silicon On Insulator |
LAYER TRANSFER METHOD
|
US7008857B2
(en)
|
2002-08-26 |
2006-03-07 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom
|
KR100854856B1
(en)
|
2002-08-26 |
2008-08-28 |
에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 |
Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
|
US6780703B2
(en)
*
|
2002-08-27 |
2004-08-24 |
Freescale Semiconductor, Inc. |
Method for forming a semiconductor device
|
TWI242796B
(en)
*
|
2002-09-04 |
2005-11-01 |
Canon Kk |
Substrate and manufacturing method therefor
|
JP2004103600A
(en)
*
|
2002-09-04 |
2004-04-02 |
Canon Inc |
Substrate and its manufacturing method
|
JP2004103855A
(en)
*
|
2002-09-10 |
2004-04-02 |
Canon Inc |
Substrate and its manufacturing method
|
JP2004103946A
(en)
*
|
2002-09-11 |
2004-04-02 |
Canon Inc |
Substrate and its manufacturing method
|
FR2844634B1
(en)
*
|
2002-09-18 |
2005-05-27 |
Soitec Silicon On Insulator |
FORMATION OF A RELAXED USEFUL LAYER FROM A PLATE WITHOUT BUFFER LAYER
|
JP2004134672A
(en)
*
|
2002-10-11 |
2004-04-30 |
Sony Corp |
Method and apparatus for manufacturing super-thin semiconductor device and super-thin backlighting type solid-state imaging device
|
CN100391004C
(en)
*
|
2002-10-30 |
2008-05-28 |
株式会社半导体能源研究所 |
Semiconductor device and manufacturing method thereof
|
FR2848336B1
(en)
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
METHOD FOR PRODUCING A STRESS STRUCTURE FOR DISSOCIATING
|
JP2004200209A
(en)
*
|
2002-12-16 |
2004-07-15 |
Fuji Xerox Co Ltd |
Method of forming conductive pattern of electrode, etc., surface light emitting type semiconductor laser using the same, and its manufacturing method
|
FR2849269B1
(en)
*
|
2002-12-20 |
2005-07-29 |
Soitec Silicon On Insulator |
METHOD FOR PRODUCING CAVITIES IN A SILICON PLATE
|
TWI330269B
(en)
*
|
2002-12-27 |
2010-09-11 |
Semiconductor Energy Lab |
Separating method
|
JP4373085B2
(en)
*
|
2002-12-27 |
2009-11-25 |
株式会社半導体エネルギー研究所 |
Semiconductor device manufacturing method, peeling method, and transfer method
|
US7799675B2
(en)
*
|
2003-06-24 |
2010-09-21 |
Sang-Yun Lee |
Bonded semiconductor structure and method of fabricating the same
|
US20100133695A1
(en)
*
|
2003-01-12 |
2010-06-03 |
Sang-Yun Lee |
Electronic circuit with embedded memory
|
KR101033797B1
(en)
|
2003-01-15 |
2011-05-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Separating method and method for manufacturing display device using the separating method
|
FR2850390B1
(en)
*
|
2003-01-24 |
2006-07-14 |
Soitec Silicon On Insulator |
METHOD FOR REMOVING A PERIPHERAL GLUE ZONE WHEN MANUFACTURING A COMPOSITE SUBSTRATE
|
KR100504180B1
(en)
*
|
2003-01-29 |
2005-07-28 |
엘지전자 주식회사 |
crystal growth method of nitride compound semiconductor
|
US7018909B2
(en)
*
|
2003-02-28 |
2006-03-28 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
|
US20040192067A1
(en)
*
|
2003-02-28 |
2004-09-30 |
Bruno Ghyselen |
Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
|
US6911379B2
(en)
*
|
2003-03-05 |
2005-06-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method of forming strained silicon on insulator substrate
|
US6949451B2
(en)
*
|
2003-03-10 |
2005-09-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
SOI chip with recess-resistant buried insulator and method of manufacturing the same
|
US7122095B2
(en)
*
|
2003-03-14 |
2006-10-17 |
S.O.I.Tec Silicon On Insulator Technologies S.A. |
Methods for forming an assembly for transfer of a useful layer
|
US20040188684A1
(en)
*
|
2003-03-31 |
2004-09-30 |
Glass Glenn A. |
Selective deposition of smooth silicon, germanium, and silicon-germanium alloy epitaxial films
|
US6902962B2
(en)
*
|
2003-04-04 |
2005-06-07 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Silicon-on-insulator chip with multiple crystal orientations
|
WO2004090958A1
(en)
*
|
2003-04-10 |
2004-10-21 |
S.O.I.Tec Silicon On Insulator Technologies |
Method of producing a hybrid device and hybrid device
|
US20040218133A1
(en)
*
|
2003-04-30 |
2004-11-04 |
Park Jong-Wan |
Flexible electro-optical apparatus and method for manufacturing the same
|
US7592239B2
(en)
*
|
2003-04-30 |
2009-09-22 |
Industry University Cooperation Foundation-Hanyang University |
Flexible single-crystal film and method of manufacturing the same
|
SG119185A1
(en)
|
2003-05-06 |
2006-02-28 |
Micron Technology Inc |
Method for packaging circuits and packaged circuits
|
ATE504082T1
(en)
*
|
2003-05-27 |
2011-04-15 |
Soitec Silicon On Insulator |
METHOD FOR PRODUCING A HETEROEPITACTIC MICROSTRUCTURE
|
FR2855908B1
(en)
*
|
2003-06-06 |
2005-08-26 |
Soitec Silicon On Insulator |
METHOD FOR OBTAINING A STRUCTURE COMPRISING AT LEAST ONE SUBSTRATE AND AN ULTRAMINO LAYER
|
FR2855909B1
(en)
*
|
2003-06-06 |
2005-08-26 |
Soitec Silicon On Insulator |
PROCESS FOR THE CONCURRENT PRODUCTION OF AT LEAST ONE PAIR OF STRUCTURES COMPRISING AT LEAST ONE USEFUL LAYER REPORTED ON A SUBSTRATE
|
US7632738B2
(en)
*
|
2003-06-24 |
2009-12-15 |
Sang-Yun Lee |
Wafer bonding method
|
US8071438B2
(en)
*
|
2003-06-24 |
2011-12-06 |
Besang Inc. |
Semiconductor circuit
|
US20100190334A1
(en)
*
|
2003-06-24 |
2010-07-29 |
Sang-Yun Lee |
Three-dimensional semiconductor structure and method of manufacturing the same
|
FR2856844B1
(en)
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
HIGH PERFORMANCE CHIP INTEGRATED CIRCUIT
|
US7863748B2
(en)
*
|
2003-06-24 |
2011-01-04 |
Oh Choonsik |
Semiconductor circuit and method of fabricating the same
|
US7867822B2
(en)
|
2003-06-24 |
2011-01-11 |
Sang-Yun Lee |
Semiconductor memory device
|
US8471263B2
(en)
*
|
2003-06-24 |
2013-06-25 |
Sang-Yun Lee |
Information storage system which includes a bonded semiconductor structure
|
FR2857503B1
(en)
*
|
2003-07-10 |
2005-11-11 |
Soitec Silicon On Insulator |
METHOD OF IMPLANTATION THROUGH IRREGULAR SURFACE
|
FR2857953B1
(en)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME
|
US7456932B2
(en)
*
|
2003-07-25 |
2008-11-25 |
Asml Netherlands B.V. |
Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby
|
FR2858461B1
(en)
*
|
2003-07-30 |
2005-11-04 |
Soitec Silicon On Insulator |
IMPLEMENTING A STRUCTURE COMPRISING A PROTECTIVE LAYER AGAINST CHEMICAL TREATMENTS
|
JP4130167B2
(en)
*
|
2003-10-06 |
2008-08-06 |
日東電工株式会社 |
Semiconductor wafer peeling method
|
FR2860642B1
(en)
*
|
2003-10-07 |
2006-02-24 |
Commissariat Energie Atomique |
PROCESS FOR PRODUCING A COMPOSITE MULTILAYER
|
FR2861497B1
(en)
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
METHOD FOR CATASTROPHIC TRANSFER OF A FINE LAYER AFTER CO-IMPLANTATION
|
US7084045B2
(en)
*
|
2003-12-12 |
2006-08-01 |
Seminconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
FR2864970B1
(en)
*
|
2004-01-09 |
2006-03-03 |
Soitec Silicon On Insulator |
SUPPORT SUBSTRATE WITH THERMAL EXPANSION COEFFICIENT DETERMINED
|
EP1571705A3
(en)
*
|
2004-03-01 |
2006-01-04 |
S.O.I.Tec Silicon on Insulator Technologies |
Process of making a semiconductor structure on a substrate
|
FR2866983B1
(en)
*
|
2004-03-01 |
2006-05-26 |
Soitec Silicon On Insulator |
REALIZING AN ENTITY IN SEMICONDUCTOR MATERIAL ON SUBSTRATE
|
JP4959552B2
(en)
*
|
2004-04-28 |
2012-06-27 |
アイユーシーエフ‐エイチワイユー |
Flexible single crystal film and method for producing the same
|
US7521292B2
(en)
|
2004-06-04 |
2009-04-21 |
The Board Of Trustees Of The University Of Illinois |
Stretchable form of single crystal silicon for high performance electronics on rubber substrates
|
US7557367B2
(en)
*
|
2004-06-04 |
2009-07-07 |
The Board Of Trustees Of The University Of Illinois |
Stretchable semiconductor elements and stretchable electrical circuits
|
US7601649B2
(en)
*
|
2004-08-02 |
2009-10-13 |
Micron Technology, Inc. |
Zirconium-doped tantalum oxide films
|
US7235812B2
(en)
*
|
2004-09-13 |
2007-06-26 |
International Business Machines Corporation |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
|
WO2006032948A1
(en)
*
|
2004-09-21 |
2006-03-30 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for obtaining a thin layer by implementing co-implantation and subsequent implantation
|
US7179719B2
(en)
*
|
2004-09-28 |
2007-02-20 |
Sharp Laboratories Of America, Inc. |
System and method for hydrogen exfoliation
|
US7482248B2
(en)
*
|
2004-12-03 |
2009-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
DE102004059651A1
(en)
*
|
2004-12-10 |
2006-06-14 |
Robert Bosch Gmbh |
Crystalline layer on a Si substrate, is formed by epitaxial precipitation on a porous region of the substrate
|
FR2880189B1
(en)
*
|
2004-12-24 |
2007-03-30 |
Tracit Technologies Sa |
METHOD FOR DEFERRING A CIRCUIT ON A MASS PLAN
|
JP2008526010A
(en)
*
|
2004-12-28 |
2008-07-17 |
エス. オー. アイ. テック シリコン オン インシュレーター テクノロジーズ |
Method for obtaining thin layers with low hole density
|
FR2880988B1
(en)
*
|
2005-01-19 |
2007-03-30 |
Soitec Silicon On Insulator |
TREATMENT OF A LAYER IN SI1-yGEy TAKEN
|
US7442597B2
(en)
*
|
2005-02-02 |
2008-10-28 |
Texas Instruments Incorporated |
Systems and methods that selectively modify liner induced stress
|
US7585792B2
(en)
|
2005-02-09 |
2009-09-08 |
S.O.I.Tec Silicon On Insulator Technologies |
Relaxation of a strained layer using a molten layer
|
US7772088B2
(en)
*
|
2005-02-28 |
2010-08-10 |
Silicon Genesis Corporation |
Method for manufacturing devices on a multi-layered substrate utilizing a stiffening backing substrate
|
TWI413152B
(en)
|
2005-03-01 |
2013-10-21 |
Semiconductor Energy Lab |
Manufacturing method of semiconductor device
|
US8455978B2
(en)
|
2010-05-27 |
2013-06-04 |
Sang-Yun Lee |
Semiconductor circuit structure and method of making the same
|
US8367524B2
(en)
*
|
2005-03-29 |
2013-02-05 |
Sang-Yun Lee |
Three-dimensional integrated circuit structure
|
US20110143506A1
(en)
*
|
2009-12-10 |
2011-06-16 |
Sang-Yun Lee |
Method for fabricating a semiconductor memory device
|
US7560789B2
(en)
*
|
2005-05-27 |
2009-07-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US7605055B2
(en)
*
|
2005-06-02 |
2009-10-20 |
S.O.I.Tec Silicon On Insulator Technologies |
Wafer with diamond layer
|
KR101272097B1
(en)
*
|
2005-06-03 |
2013-06-07 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
Integrated circuit device and manufacturing method thereof
|
TWI282629B
(en)
*
|
2005-06-21 |
2007-06-11 |
Unit Light Technology Inc |
Method for fabricating LED
|
US7820495B2
(en)
*
|
2005-06-30 |
2010-10-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US7674687B2
(en)
*
|
2005-07-27 |
2010-03-09 |
Silicon Genesis Corporation |
Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
|
US20070029043A1
(en)
*
|
2005-08-08 |
2007-02-08 |
Silicon Genesis Corporation |
Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process
|
US7166520B1
(en)
*
|
2005-08-08 |
2007-01-23 |
Silicon Genesis Corporation |
Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
|
US7427554B2
(en)
*
|
2005-08-12 |
2008-09-23 |
Silicon Genesis Corporation |
Manufacturing strained silicon substrates using a backing material
|
FR2889887B1
(en)
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
METHOD FOR DEFERING A THIN LAYER ON A SUPPORT
|
FR2891281B1
(en)
|
2005-09-28 |
2007-12-28 |
Commissariat Energie Atomique |
METHOD FOR MANUFACTURING A THIN FILM ELEMENT
|
US20070148917A1
(en)
*
|
2005-12-22 |
2007-06-28 |
Sumco Corporation |
Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer
|
FR2895563B1
(en)
*
|
2005-12-22 |
2008-04-04 |
Soitec Silicon On Insulator |
METHOD FOR SIMPLIFYING A FINISHING SEQUENCE AND STRUCTURE OBTAINED BY THE METHOD
|
DE102006003464A1
(en)
*
|
2006-01-25 |
2007-07-26 |
Degussa Gmbh |
Formation of silicon layer on substrate surface by gas phase deposition, in process for solar cell manufacture, employs silicon tetrachloride as precursor
|
US8222116B2
(en)
*
|
2006-03-03 |
2012-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US8173519B2
(en)
|
2006-03-03 |
2012-05-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
WO2007106502A2
(en)
*
|
2006-03-13 |
2007-09-20 |
Nanogram Corporation |
Thin silicon or germanium sheets and photovoltaics formed from thin sheets
|
JP5128781B2
(en)
*
|
2006-03-13 |
2013-01-23 |
信越化学工業株式会社 |
Manufacturing method of substrate for photoelectric conversion element
|
US20070219541A1
(en)
*
|
2006-03-14 |
2007-09-20 |
Intralase Corp. |
System and method for ophthalmic laser surgery on a cornea
|
US7863157B2
(en)
*
|
2006-03-17 |
2011-01-04 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a layer transfer process
|
DE102006013313A1
(en)
*
|
2006-03-21 |
2007-09-27 |
Institut Für Solarenergieforschung Gmbh |
A method of producing a selectively doped region in a semiconductor layer using out-diffusion and corresponding semiconductor device
|
US7598153B2
(en)
*
|
2006-03-31 |
2009-10-06 |
Silicon Genesis Corporation |
Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
|
JP2009532918A
(en)
|
2006-04-05 |
2009-09-10 |
シリコン ジェネシス コーポレーション |
Manufacturing method and structure of solar cell using layer transfer process
|
EP1863100A1
(en)
*
|
2006-05-30 |
2007-12-05 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) |
Method for the production of thin substrates
|
CN100442560C
(en)
*
|
2006-05-18 |
2008-12-10 |
洲磊科技股份有限公司 |
Method for producing light-emitting diodes
|
US7910456B1
(en)
*
|
2006-05-26 |
2011-03-22 |
Silicon Genesis Corporation |
Liquid based substrate method and structure for layer transfer applications
|
TWI424499B
(en)
*
|
2006-06-30 |
2014-01-21 |
Semiconductor Energy Lab |
Method of manufacturing semiconductor device
|
US8153513B2
(en)
*
|
2006-07-25 |
2012-04-10 |
Silicon Genesis Corporation |
Method and system for continuous large-area scanning implantation process
|
US20100047959A1
(en)
*
|
2006-08-07 |
2010-02-25 |
Emcore Solar Power, Inc. |
Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
|
US20100203730A1
(en)
*
|
2009-02-09 |
2010-08-12 |
Emcore Solar Power, Inc. |
Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
|
TWI611565B
(en)
|
2006-09-29 |
2018-01-11 |
半導體能源研究所股份有限公司 |
Method for manufacturing semiconductor device
|
US8137417B2
(en)
|
2006-09-29 |
2012-03-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling apparatus and manufacturing apparatus of semiconductor device
|
JP2008112848A
(en)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
Process for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
|
JP2008112847A
(en)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
Process for manufacturing single crystal silicon solar cell and single crystal silicon solar cell
|
JP2008112843A
(en)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
Process for manufacturing singly crystal silicon solar cell and single crystal silicon solar cell
|
JP2008112840A
(en)
*
|
2006-10-30 |
2008-05-15 |
Shin Etsu Chem Co Ltd |
Single crystal silicon solar cell and process for manufacturing same
|
JP5090716B2
(en)
*
|
2006-11-24 |
2012-12-05 |
信越化学工業株式会社 |
Method for producing single crystal silicon solar cell
|
FR2910179B1
(en)
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
METHOD FOR MANUFACTURING THIN LAYERS OF GaN BY IMPLANTATION AND RECYCLING OF A STARTING SUBSTRATE
|
JP5166745B2
(en)
*
|
2007-03-07 |
2013-03-21 |
信越化学工業株式会社 |
Method for producing single crystal silicon solar cell
|
CN101652867B
(en)
*
|
2007-04-06 |
2012-08-08 |
株式会社半导体能源研究所 |
Photovoltaic device and method for manufacturing the same
|
JP5048380B2
(en)
|
2007-04-09 |
2012-10-17 |
信越化学工業株式会社 |
Method for producing single crystal silicon solar cell
|
US9059247B2
(en)
|
2007-05-18 |
2015-06-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing SOI substrate and method for manufacturing semiconductor device
|
WO2009003029A2
(en)
*
|
2007-06-25 |
2008-12-31 |
Brewer Science Inc. |
High-temperature spin-on temporary bonding compositions
|
JP5498670B2
(en)
*
|
2007-07-13 |
2014-05-21 |
株式会社半導体エネルギー研究所 |
Method for manufacturing semiconductor substrate
|
US20090206275A1
(en)
*
|
2007-10-03 |
2009-08-20 |
Silcon Genesis Corporation |
Accelerator particle beam apparatus and method for low contaminate processing
|
SG170089A1
(en)
|
2007-10-29 |
2011-04-29 |
Semiconductor Energy Lab |
Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
|
AU2008325223A1
(en)
|
2007-11-02 |
2009-05-14 |
President And Fellows Of Harvard College |
Production of free-standing solid state layers by thermal processing of substrates with a polymer
|
CN101960618B
(en)
*
|
2007-11-09 |
2013-05-01 |
森普雷姆有限公司 |
Low-cost solar cells and methods for their production
|
JP5248995B2
(en)
*
|
2007-11-30 |
2013-07-31 |
株式会社半導体エネルギー研究所 |
Method for manufacturing photoelectric conversion device
|
FR2925221B1
(en)
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
METHOD FOR TRANSFERRING A THIN LAYER
|
US20090242019A1
(en)
*
|
2007-12-19 |
2009-10-01 |
Silexos, Inc |
Method to create high efficiency, low cost polysilicon or microcrystalline solar cell on flexible substrates using multilayer high speed inkjet printing and, rapid annealing and light trapping
|
CN101471347B
(en)
*
|
2007-12-26 |
2012-02-01 |
上海新傲科技股份有限公司 |
Semiconductor substrate, method for preparing the same and three-dimensional encapsulation method
|
EP2238618B1
(en)
|
2008-01-24 |
2015-07-29 |
Brewer Science, Inc. |
Method for reversibly mounting a device wafer to a carrier substrate
|
US8481845B2
(en)
*
|
2008-02-05 |
2013-07-09 |
Gtat Corporation |
Method to form a photovoltaic cell comprising a thin lamina
|
US8129613B2
(en)
*
|
2008-02-05 |
2012-03-06 |
Twin Creeks Technologies, Inc. |
Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
|
US8563352B2
(en)
*
|
2008-02-05 |
2013-10-22 |
Gtat Corporation |
Creation and translation of low-relief texture for a photovoltaic cell
|
US8178419B2
(en)
|
2008-02-05 |
2012-05-15 |
Twin Creeks Technologies, Inc. |
Method to texture a lamina surface within a photovoltaic cell
|
EP2105972A3
(en)
|
2008-03-28 |
2015-06-10 |
Semiconductor Energy Laboratory Co, Ltd. |
Photoelectric conversion device and method for manufacturing the same
|
US7974119B2
(en)
|
2008-07-10 |
2011-07-05 |
Seagate Technology Llc |
Transmission gate-based spin-transfer torque memory unit
|
US9030867B2
(en)
|
2008-10-20 |
2015-05-12 |
Seagate Technology Llc |
Bipolar CMOS select device for resistive sense memory
|
US7936580B2
(en)
|
2008-10-20 |
2011-05-03 |
Seagate Technology Llc |
MRAM diode array and access method
|
US7936583B2
(en)
|
2008-10-30 |
2011-05-03 |
Seagate Technology Llc |
Variable resistive memory punchthrough access method
|
US7951640B2
(en)
*
|
2008-11-07 |
2011-05-31 |
Sunpreme, Ltd. |
Low-cost multi-junction solar cells and methods for their production
|
US7825478B2
(en)
|
2008-11-07 |
2010-11-02 |
Seagate Technology Llc |
Polarity dependent switch for resistive sense memory
|
US8796066B2
(en)
|
2008-11-07 |
2014-08-05 |
Sunpreme, Inc. |
Low-cost solar cells and methods for fabricating low cost substrates for solar cells
|
US8178864B2
(en)
|
2008-11-18 |
2012-05-15 |
Seagate Technology Llc |
Asymmetric barrier diode
|
JP5586920B2
(en)
*
|
2008-11-20 |
2014-09-10 |
株式会社半導体エネルギー研究所 |
Method for manufacturing flexible semiconductor device
|
US8203869B2
(en)
|
2008-12-02 |
2012-06-19 |
Seagate Technology Llc |
Bit line charge accumulation sensing for resistive changing memory
|
CN101752455B
(en)
*
|
2008-12-15 |
2011-12-07 |
中芯国际集成电路制造(上海)有限公司 |
Manufacturing method of solar cell
|
US7785989B2
(en)
*
|
2008-12-17 |
2010-08-31 |
Emcore Solar Power, Inc. |
Growth substrates for inverted metamorphic multijunction solar cells
|
TWI496189B
(en)
*
|
2008-12-23 |
2015-08-11 |
Siltectra Gmbh |
Method for producing thin, free-standing layers of solid state materials with structured surfaces
|
US8778199B2
(en)
|
2009-02-09 |
2014-07-15 |
Emoore Solar Power, Inc. |
Epitaxial lift off in inverted metamorphic multijunction solar cells
|
US20110303281A1
(en)
*
|
2009-02-26 |
2011-12-15 |
Tomoya Kodama |
Method for manufacturing thin film compound solar cell
|
FR2943848B1
(en)
*
|
2009-03-27 |
2012-02-03 |
Jean Pierre Medina |
METHOD AND MACHINE FOR MANUFACTURING SEMICONDUCTOR, PHOTOVOLTAIC CELL TYPE OR SIMILAR ELECTRONIC COMPONENT
|
US7986042B2
(en)
|
2009-04-14 |
2011-07-26 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9509313B2
(en)
|
2009-04-14 |
2016-11-29 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8378715B2
(en)
|
2009-04-14 |
2013-02-19 |
Monolithic 3D Inc. |
Method to construct systems
|
US8373439B2
(en)
|
2009-04-14 |
2013-02-12 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8058137B1
(en)
|
2009-04-14 |
2011-11-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9577642B2
(en)
|
2009-04-14 |
2017-02-21 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device
|
US8754533B2
(en)
|
2009-04-14 |
2014-06-17 |
Monolithic 3D Inc. |
Monolithic three-dimensional semiconductor device and structure
|
US8405420B2
(en)
*
|
2009-04-14 |
2013-03-26 |
Monolithic 3D Inc. |
System comprising a semiconductor device and structure
|
US9711407B2
(en)
|
2009-04-14 |
2017-07-18 |
Monolithic 3D Inc. |
Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
|
US8427200B2
(en)
|
2009-04-14 |
2013-04-23 |
Monolithic 3D Inc. |
3D semiconductor device
|
US8362482B2
(en)
|
2009-04-14 |
2013-01-29 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8362800B2
(en)
|
2010-10-13 |
2013-01-29 |
Monolithic 3D Inc. |
3D semiconductor device including field repairable logics
|
US8384426B2
(en)
*
|
2009-04-14 |
2013-02-26 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8395191B2
(en)
|
2009-10-12 |
2013-03-12 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8669778B1
(en)
|
2009-04-14 |
2014-03-11 |
Monolithic 3D Inc. |
Method for design and manufacturing of a 3D semiconductor device
|
US8329557B2
(en)
|
2009-05-13 |
2012-12-11 |
Silicon Genesis Corporation |
Techniques for forming thin films by implantation with reduced channeling
|
JP5152410B2
(en)
*
|
2009-06-09 |
2013-02-27 |
株式会社村田製作所 |
Method for manufacturing piezoelectric device
|
US8633097B2
(en)
*
|
2009-06-09 |
2014-01-21 |
International Business Machines Corporation |
Single-junction photovoltaic cell
|
FR2947098A1
(en)
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER
|
US8159856B2
(en)
|
2009-07-07 |
2012-04-17 |
Seagate Technology Llc |
Bipolar select device for resistive sense memory
|
US8158964B2
(en)
|
2009-07-13 |
2012-04-17 |
Seagate Technology Llc |
Schottky diode switch and memory units containing the same
|
US8183126B2
(en)
|
2009-07-13 |
2012-05-22 |
Seagate Technology Llc |
Patterning embedded control lines for vertically stacked semiconductor elements
|
US9847243B2
(en)
|
2009-08-27 |
2017-12-19 |
Corning Incorporated |
Debonding a glass substrate from carrier using ultrasonic wave
|
US10043781B2
(en)
|
2009-10-12 |
2018-08-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10157909B2
(en)
|
2009-10-12 |
2018-12-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9099424B1
(en)
|
2012-08-10 |
2015-08-04 |
Monolithic 3D Inc. |
Semiconductor system, device and structure with heat removal
|
US11374118B2
(en)
|
2009-10-12 |
2022-06-28 |
Monolithic 3D Inc. |
Method to form a 3D integrated circuit
|
US8294159B2
(en)
|
2009-10-12 |
2012-10-23 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US10354995B2
(en)
|
2009-10-12 |
2019-07-16 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US8476145B2
(en)
|
2010-10-13 |
2013-07-02 |
Monolithic 3D Inc. |
Method of fabricating a semiconductor device and structure
|
US8536023B2
(en)
|
2010-11-22 |
2013-09-17 |
Monolithic 3D Inc. |
Method of manufacturing a semiconductor device and structure
|
US10366970B2
(en)
|
2009-10-12 |
2019-07-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8581349B1
(en)
|
2011-05-02 |
2013-11-12 |
Monolithic 3D Inc. |
3D memory semiconductor device and structure
|
US8450804B2
(en)
|
2011-03-06 |
2013-05-28 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US11018133B2
(en)
|
2009-10-12 |
2021-05-25 |
Monolithic 3D Inc. |
3D integrated circuit
|
US10910364B2
(en)
|
2009-10-12 |
2021-02-02 |
Monolitaic 3D Inc. |
3D semiconductor device
|
US8742476B1
(en)
|
2012-11-27 |
2014-06-03 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10388863B2
(en)
|
2009-10-12 |
2019-08-20 |
Monolithic 3D Inc. |
3D memory device and structure
|
DE102009053262A1
(en)
*
|
2009-11-13 |
2011-05-19 |
Institut Für Solarenergieforschung Gmbh |
A method for forming thin semiconductor layer substrates and method for producing a semiconductor device, in particular a solar cell, with such a semiconductor layer substrate
|
KR101156437B1
(en)
*
|
2010-01-27 |
2012-07-03 |
삼성모바일디스플레이주식회사 |
Organic Laser induced thermal imaging apparatus and method for manufacturing organic light emitting display device using the same
|
US8461035B1
(en)
|
2010-09-30 |
2013-06-11 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8541819B1
(en)
|
2010-12-09 |
2013-09-24 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8026521B1
(en)
|
2010-10-11 |
2011-09-27 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8373230B1
(en)
|
2010-10-13 |
2013-02-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US9099526B2
(en)
|
2010-02-16 |
2015-08-04 |
Monolithic 3D Inc. |
Integrated circuit device and structure
|
US8492886B2
(en)
|
2010-02-16 |
2013-07-23 |
Monolithic 3D Inc |
3D integrated circuit with logic
|
US8349626B2
(en)
*
|
2010-03-23 |
2013-01-08 |
Gtat Corporation |
Creation of low-relief texture for a photovoltaic cell
|
US8723335B2
(en)
|
2010-05-20 |
2014-05-13 |
Sang-Yun Lee |
Semiconductor circuit structure and method of forming the same using a capping layer
|
US8852391B2
(en)
*
|
2010-06-21 |
2014-10-07 |
Brewer Science Inc. |
Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
|
JP5902406B2
(en)
*
|
2010-06-25 |
2016-04-13 |
株式会社半導体エネルギー研究所 |
Separation method and manufacturing method of semiconductor device
|
KR101134819B1
(en)
|
2010-07-02 |
2012-04-13 |
이상윤 |
Method for fabricating semiconductor memory
|
US8642416B2
(en)
|
2010-07-30 |
2014-02-04 |
Monolithic 3D Inc. |
Method of forming three dimensional integrated circuit devices using layer transfer technique
|
US9219005B2
(en)
|
2011-06-28 |
2015-12-22 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US8901613B2
(en)
|
2011-03-06 |
2014-12-02 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US10217667B2
(en)
|
2011-06-28 |
2019-02-26 |
Monolithic 3D Inc. |
3D semiconductor device, fabrication method and system
|
US9953925B2
(en)
|
2011-06-28 |
2018-04-24 |
Monolithic 3D Inc. |
Semiconductor system and device
|
US9263314B2
(en)
|
2010-08-06 |
2016-02-16 |
Brewer Science Inc. |
Multiple bonding layers for thin-wafer handling
|
DE102010046215B4
(en)
|
2010-09-21 |
2019-01-03 |
Infineon Technologies Austria Ag |
Semiconductor body with strained region, electronic component and a method for producing the semiconductor body.
|
US8617952B2
(en)
|
2010-09-28 |
2013-12-31 |
Seagate Technology Llc |
Vertical transistor with hardening implatation
|
US8163581B1
(en)
|
2010-10-13 |
2012-04-24 |
Monolith IC 3D |
Semiconductor and optoelectronic devices
|
US11482440B2
(en)
|
2010-12-16 |
2022-10-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
|
US10497713B2
(en)
|
2010-11-18 |
2019-12-03 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US8273610B2
(en)
|
2010-11-18 |
2012-09-25 |
Monolithic 3D Inc. |
Method of constructing a semiconductor device and structure
|
US11469271B2
(en)
|
2010-10-11 |
2022-10-11 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US10896931B1
(en)
|
2010-10-11 |
2021-01-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11227897B2
(en)
|
2010-10-11 |
2022-01-18 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11158674B2
(en)
|
2010-10-11 |
2021-10-26 |
Monolithic 3D Inc. |
Method to produce a 3D semiconductor device and structure
|
US11600667B1
(en)
|
2010-10-11 |
2023-03-07 |
Monolithic 3D Inc. |
Method to produce 3D semiconductor devices and structures with memory
|
US11315980B1
(en)
|
2010-10-11 |
2022-04-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure with transistors
|
US11018191B1
(en)
|
2010-10-11 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US8114757B1
(en)
|
2010-10-11 |
2012-02-14 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11257867B1
(en)
|
2010-10-11 |
2022-02-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with oxide bonds
|
US11024673B1
(en)
|
2010-10-11 |
2021-06-01 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10290682B2
(en)
|
2010-10-11 |
2019-05-14 |
Monolithic 3D Inc. |
3D IC semiconductor device and structure with stacked memory
|
US10679977B2
(en)
|
2010-10-13 |
2020-06-09 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US11929372B2
(en)
|
2010-10-13 |
2024-03-12 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US10943934B2
(en)
|
2010-10-13 |
2021-03-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11605663B2
(en)
|
2010-10-13 |
2023-03-14 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11133344B2
(en)
|
2010-10-13 |
2021-09-28 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US10998374B1
(en)
|
2010-10-13 |
2021-05-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11694922B2
(en)
|
2010-10-13 |
2023-07-04 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US9197804B1
(en)
|
2011-10-14 |
2015-11-24 |
Monolithic 3D Inc. |
Semiconductor and optoelectronic devices
|
US10978501B1
(en)
|
2010-10-13 |
2021-04-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11404466B2
(en)
|
2010-10-13 |
2022-08-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11043523B1
(en)
|
2010-10-13 |
2021-06-22 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors
|
US11327227B2
(en)
|
2010-10-13 |
2022-05-10 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11869915B2
(en)
|
2010-10-13 |
2024-01-09 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US10833108B2
(en)
|
2010-10-13 |
2020-11-10 |
Monolithic 3D Inc. |
3D microdisplay device and structure
|
US8379458B1
(en)
|
2010-10-13 |
2013-02-19 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11855114B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with image sensors and wafer bonding
|
US11063071B1
(en)
|
2010-10-13 |
2021-07-13 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with waveguides
|
US11437368B2
(en)
|
2010-10-13 |
2022-09-06 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11164898B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure
|
US11855100B2
(en)
|
2010-10-13 |
2023-12-26 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with oxide bonding
|
US11163112B2
(en)
|
2010-10-13 |
2021-11-02 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with electromagnetic modulators
|
US11735462B2
(en)
|
2010-11-18 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11495484B2
(en)
|
2010-11-18 |
2022-11-08 |
Monolithic 3D Inc. |
3D semiconductor devices and structures with at least two single-crystal layers
|
US11862503B2
(en)
|
2010-11-18 |
2024-01-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11107721B2
(en)
|
2010-11-18 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with NAND logic
|
US11610802B2
(en)
|
2010-11-18 |
2023-03-21 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
|
US11094576B1
(en)
|
2010-11-18 |
2021-08-17 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11004719B1
(en)
|
2010-11-18 |
2021-05-11 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11521888B2
(en)
|
2010-11-18 |
2022-12-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure with high-k metal gate transistors
|
US11923230B1
(en)
|
2010-11-18 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11901210B2
(en)
|
2010-11-18 |
2024-02-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11355380B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
|
US11018042B1
(en)
|
2010-11-18 |
2021-05-25 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11482438B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device and structure
|
US11211279B2
(en)
|
2010-11-18 |
2021-12-28 |
Monolithic 3D Inc. |
Method for processing a 3D integrated circuit and structure
|
US11355381B2
(en)
|
2010-11-18 |
2022-06-07 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11508605B2
(en)
|
2010-11-18 |
2022-11-22 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11164770B1
(en)
|
2010-11-18 |
2021-11-02 |
Monolithic 3D Inc. |
Method for producing a 3D semiconductor memory device and structure
|
US11854857B1
(en)
|
2010-11-18 |
2023-12-26 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11031275B2
(en)
|
2010-11-18 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11615977B2
(en)
|
2010-11-18 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11569117B2
(en)
|
2010-11-18 |
2023-01-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure with single-crystal layers
|
US11121021B2
(en)
|
2010-11-18 |
2021-09-14 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11804396B2
(en)
|
2010-11-18 |
2023-10-31 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
|
US11482439B2
(en)
|
2010-11-18 |
2022-10-25 |
Monolithic 3D Inc. |
Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
|
US11443971B2
(en)
|
2010-11-18 |
2022-09-13 |
Monolithic 3D Inc. |
3D semiconductor device and structure with memory
|
US11784082B2
(en)
|
2010-11-18 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US8648426B2
(en)
|
2010-12-17 |
2014-02-11 |
Seagate Technology Llc |
Tunneling transistors
|
FR2969664B1
(en)
*
|
2010-12-22 |
2013-06-14 |
Soitec Silicon On Insulator |
METHOD FOR CLEAVING A SUBSTRATE
|
US8975670B2
(en)
|
2011-03-06 |
2015-03-10 |
Monolithic 3D Inc. |
Semiconductor device and structure for heat removal
|
US9818901B2
(en)
*
|
2011-05-13 |
2017-11-14 |
International Business Machines Corporation |
Wafer bonded solar cells and fabrication methods
|
US8709914B2
(en)
*
|
2011-06-14 |
2014-04-29 |
International Business Machines Corporation |
Method for controlled layer transfer
|
US9040392B2
(en)
*
|
2011-06-15 |
2015-05-26 |
International Business Machines Corporation |
Method for controlled removal of a semiconductor device layer from a base substrate
|
US10388568B2
(en)
|
2011-06-28 |
2019-08-20 |
Monolithic 3D Inc. |
3D semiconductor device and system
|
US8687399B2
(en)
|
2011-10-02 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US9029173B2
(en)
|
2011-10-18 |
2015-05-12 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
FR2985601B1
(en)
*
|
2012-01-06 |
2016-06-03 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING SUBSTRATE AND SEMICONDUCTOR STRUCTURE
|
US8841161B2
(en)
|
2012-02-05 |
2014-09-23 |
GTAT.Corporation |
Method for forming flexible solar cells
|
US8916954B2
(en)
|
2012-02-05 |
2014-12-23 |
Gtat Corporation |
Multi-layer metal support
|
US9000557B2
(en)
|
2012-03-17 |
2015-04-07 |
Zvi Or-Bach |
Semiconductor device and structure
|
US11088050B2
(en)
|
2012-04-09 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers
|
US11735501B1
(en)
|
2012-04-09 |
2023-08-22 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11410912B2
(en)
|
2012-04-09 |
2022-08-09 |
Monolithic 3D Inc. |
3D semiconductor device with vias and isolation layers
|
US11594473B2
(en)
|
2012-04-09 |
2023-02-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11694944B1
(en)
|
2012-04-09 |
2023-07-04 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11164811B2
(en)
|
2012-04-09 |
2021-11-02 |
Monolithic 3D Inc. |
3D semiconductor device with isolation layers and oxide-to-oxide bonding
|
US10600888B2
(en)
|
2012-04-09 |
2020-03-24 |
Monolithic 3D Inc. |
3D semiconductor device
|
US11616004B1
(en)
|
2012-04-09 |
2023-03-28 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11881443B2
(en)
|
2012-04-09 |
2024-01-23 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and a connective path
|
US11476181B1
(en)
|
2012-04-09 |
2022-10-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8557632B1
(en)
|
2012-04-09 |
2013-10-15 |
Monolithic 3D Inc. |
Method for fabrication of a semiconductor device and structure
|
US8936961B2
(en)
*
|
2012-05-26 |
2015-01-20 |
International Business Machines Corporation |
Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
|
US8785294B2
(en)
|
2012-07-26 |
2014-07-22 |
Gtat Corporation |
Silicon carbide lamina
|
US8574929B1
(en)
|
2012-11-16 |
2013-11-05 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US8686428B1
(en)
|
2012-11-16 |
2014-04-01 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US8674470B1
(en)
|
2012-12-22 |
2014-03-18 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11217565B2
(en)
|
2012-12-22 |
2022-01-04 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11309292B2
(en)
|
2012-12-22 |
2022-04-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11916045B2
(en)
|
2012-12-22 |
2024-02-27 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11063024B1
(en)
|
2012-12-22 |
2021-07-13 |
Monlithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11018116B2
(en)
|
2012-12-22 |
2021-05-25 |
Monolithic 3D Inc. |
Method to form a 3D semiconductor device and structure
|
US11784169B2
(en)
|
2012-12-22 |
2023-10-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US11961827B1
(en)
|
2012-12-22 |
2024-04-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US10600657B2
(en)
|
2012-12-29 |
2020-03-24 |
Monolithic 3D Inc |
3D semiconductor device and structure
|
US9871034B1
(en)
|
2012-12-29 |
2018-01-16 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10892169B2
(en)
|
2012-12-29 |
2021-01-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10651054B2
(en)
|
2012-12-29 |
2020-05-12 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11004694B1
(en)
|
2012-12-29 |
2021-05-11 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10115663B2
(en)
|
2012-12-29 |
2018-10-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430667B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US9385058B1
(en)
|
2012-12-29 |
2016-07-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10903089B1
(en)
|
2012-12-29 |
2021-01-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11087995B1
(en)
|
2012-12-29 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11430668B2
(en)
|
2012-12-29 |
2022-08-30 |
Monolithic 3D Inc. |
3D semiconductor device and structure with bonding
|
US11177140B2
(en)
|
2012-12-29 |
2021-11-16 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
WO2014129519A1
(en)
|
2013-02-20 |
2014-08-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling method, semiconductor device, and peeling apparatus
|
CN105027273B
(en)
*
|
2013-03-07 |
2019-01-22 |
住友电木株式会社 |
Adhesive film, laminated body and its solidfied material and semiconductor device and its manufacturing method
|
US8902663B1
(en)
|
2013-03-11 |
2014-12-02 |
Monolithic 3D Inc. |
Method of maintaining a memory state
|
US11869965B2
(en)
|
2013-03-11 |
2024-01-09 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US11935949B1
(en)
|
2013-03-11 |
2024-03-19 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers and memory cells
|
US10325651B2
(en)
|
2013-03-11 |
2019-06-18 |
Monolithic 3D Inc. |
3D semiconductor device with stacked memory
|
US11923374B2
(en)
|
2013-03-12 |
2024-03-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure with metal layers
|
US8994404B1
(en)
|
2013-03-12 |
2015-03-31 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10840239B2
(en)
|
2014-08-26 |
2020-11-17 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11088130B2
(en)
|
2014-01-28 |
2021-08-10 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11398569B2
(en)
|
2013-03-12 |
2022-07-26 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US9117749B1
(en)
|
2013-03-15 |
2015-08-25 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US10224279B2
(en)
|
2013-03-15 |
2019-03-05 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11030371B2
(en)
|
2013-04-15 |
2021-06-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11487928B2
(en)
|
2013-04-15 |
2022-11-01 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US9021414B1
(en)
|
2013-04-15 |
2015-04-28 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11720736B2
(en)
|
2013-04-15 |
2023-08-08 |
Monolithic 3D Inc. |
Automation methods for 3D integrated circuits and devices
|
US11574109B1
(en)
|
2013-04-15 |
2023-02-07 |
Monolithic 3D Inc |
Automation methods for 3D integrated circuits and devices
|
US11341309B1
(en)
|
2013-04-15 |
2022-05-24 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
US11270055B1
(en)
|
2013-04-15 |
2022-03-08 |
Monolithic 3D Inc. |
Automation for monolithic 3D devices
|
CN109273622B
(en)
|
2013-08-06 |
2021-03-12 |
株式会社半导体能源研究所 |
Stripping method
|
TWI794098B
(en)
|
2013-09-06 |
2023-02-21 |
日商半導體能源研究所股份有限公司 |
Light-emitting device and method for manufacturing light-emitting device
|
JP6513929B2
(en)
|
2013-11-06 |
2019-05-15 |
株式会社半導体エネルギー研究所 |
Peeling method
|
CN105793957B
(en)
|
2013-12-12 |
2019-05-03 |
株式会社半导体能源研究所 |
Stripping means and stripping off device
|
US11107808B1
(en)
|
2014-01-28 |
2021-08-31 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10297586B2
(en)
|
2015-03-09 |
2019-05-21 |
Monolithic 3D Inc. |
Methods for processing a 3D semiconductor device
|
US11031394B1
(en)
|
2014-01-28 |
2021-06-08 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
FR3019374A1
(en)
|
2014-03-28 |
2015-10-02 |
Soitec Silicon On Insulator |
METHOD FOR SEPARATING AND TRANSFERTING LAYERS
|
US9799829B2
(en)
|
2014-07-25 |
2017-10-24 |
Semiconductor Energy Laboratory Co., Ltd. |
Separation method, light-emitting device, module, and electronic device
|
FR3024953A1
(en)
*
|
2014-08-25 |
2016-02-26 |
Commissariat Energie Atomique |
PROCESS FOR DETOURING A REPORTED THIN LAYER
|
JP6208646B2
(en)
*
|
2014-09-30 |
2017-10-04 |
信越化学工業株式会社 |
Bonded substrate, manufacturing method thereof, and supporting substrate for bonding
|
US10032870B2
(en)
*
|
2015-03-12 |
2018-07-24 |
Globalfoundries Inc. |
Low defect III-V semiconductor template on porous silicon
|
US11056468B1
(en)
|
2015-04-19 |
2021-07-06 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10825779B2
(en)
|
2015-04-19 |
2020-11-03 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10381328B2
(en)
|
2015-04-19 |
2019-08-13 |
Monolithic 3D Inc. |
Semiconductor device and structure
|
US11011507B1
(en)
|
2015-04-19 |
2021-05-18 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11956952B2
(en)
|
2015-08-23 |
2024-04-09 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
US10515981B2
(en)
|
2015-09-21 |
2019-12-24 |
Monolithic 3D Inc. |
Multilevel semiconductor device and structure with memory
|
US10522225B1
(en)
|
2015-10-02 |
2019-12-31 |
Monolithic 3D Inc. |
Semiconductor device with non-volatile memory
|
US10847540B2
(en)
|
2015-10-24 |
2020-11-24 |
Monolithic 3D Inc. |
3D semiconductor memory device and structure
|
US11296115B1
(en)
|
2015-10-24 |
2022-04-05 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US11114464B2
(en)
|
2015-10-24 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor device and structure
|
US10418369B2
(en)
|
2015-10-24 |
2019-09-17 |
Monolithic 3D Inc. |
Multi-level semiconductor memory device and structure
|
US11114427B2
(en)
|
2015-11-07 |
2021-09-07 |
Monolithic 3D Inc. |
3D semiconductor processor and memory device and structure
|
US11937422B2
(en)
|
2015-11-07 |
2024-03-19 |
Monolithic 3D Inc. |
Semiconductor memory device and structure
|
FR3046874B1
(en)
|
2016-01-15 |
2018-04-13 |
Soitec |
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURES INCLUDING A HIGH RESISTIVITY LAYER, AND RELATED SEMICONDUCTOR STRUCTURES
|
JP6822858B2
(en)
|
2016-01-26 |
2021-01-27 |
株式会社半導体エネルギー研究所 |
Method of forming the starting point of peeling and peeling method
|
US10177002B2
(en)
*
|
2016-04-29 |
2019-01-08 |
Applied Materials, Inc. |
Methods for chemical etching of silicon
|
US20180019169A1
(en)
*
|
2016-07-12 |
2018-01-18 |
QMAT, Inc. |
Backing substrate stabilizing donor substrate for implant or reclamation
|
WO2018020333A1
(en)
|
2016-07-29 |
2018-02-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Separation method, display device, display module, and electronic device
|
TWI753868B
(en)
|
2016-08-05 |
2022-02-01 |
日商半導體能源研究所股份有限公司 |
Peeling method, display device, display module and electronic device
|
TWI730017B
(en)
|
2016-08-09 |
2021-06-11 |
日商半導體能源研究所股份有限公司 |
Manufacturing method of display device, display device, display module and electronic device
|
US10923350B2
(en)
|
2016-08-31 |
2021-02-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
CN109564851A
(en)
|
2016-08-31 |
2019-04-02 |
株式会社半导体能源研究所 |
The manufacturing method of semiconductor device
|
US10369664B2
(en)
|
2016-09-23 |
2019-08-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
DE102016118268A1
(en)
*
|
2016-09-27 |
2018-03-29 |
Infineon Technologies Ag |
Method for processing a monocrystalline substrate and micromechanical structure
|
US11251149B2
(en)
|
2016-10-10 |
2022-02-15 |
Monolithic 3D Inc. |
3D memory device and structure
|
US11329059B1
(en)
|
2016-10-10 |
2022-05-10 |
Monolithic 3D Inc. |
3D memory devices and structures with thinned single crystal substrates
|
US11812620B2
(en)
|
2016-10-10 |
2023-11-07 |
Monolithic 3D Inc. |
3D DRAM memory devices and structures with control circuits
|
US11930648B1
(en)
|
2016-10-10 |
2024-03-12 |
Monolithic 3D Inc. |
3D memory devices and structures with metal layers
|
US11711928B2
(en)
|
2016-10-10 |
2023-07-25 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
US11869591B2
(en)
|
2016-10-10 |
2024-01-09 |
Monolithic 3D Inc. |
3D memory devices and structures with control circuits
|
CN106384711A
(en)
*
|
2016-10-19 |
2017-02-08 |
成都海威华芯科技有限公司 |
Substrate transfer method of GaN power semiconductor device
|
DE102017003698B8
(en)
|
2017-04-18 |
2019-11-07 |
Azur Space Solar Power Gmbh |
Production of a thin substrate layer
|
DE102017119568B4
(en)
|
2017-08-25 |
2024-01-04 |
Infineon Technologies Ag |
Silicon carbide components and method for producing silicon carbide components
|
FR3073083B1
(en)
*
|
2017-10-31 |
2019-10-11 |
Soitec |
METHOD FOR MANUFACTURING A FILM ON A FLEXIBLE SHEET
|
DE102018000748A1
(en)
|
2018-01-31 |
2019-08-01 |
Azur Space Solar Power Gmbh |
Production of a thin substrate layer
|
FR3079532B1
(en)
*
|
2018-03-28 |
2022-03-25 |
Soitec Silicon On Insulator |
METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF AIN MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF AIN MATERIAL
|
CN112204754A
(en)
*
|
2018-05-30 |
2021-01-08 |
加利福尼亚大学董事会 |
Method for removing semiconductor layer from semiconductor substrate
|
US11763864B2
(en)
|
2019-04-08 |
2023-09-19 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures with bit-line pillars
|
US10892016B1
(en)
|
2019-04-08 |
2021-01-12 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11018156B2
(en)
|
2019-04-08 |
2021-05-25 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11296106B2
(en)
|
2019-04-08 |
2022-04-05 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
US11158652B1
(en)
|
2019-04-08 |
2021-10-26 |
Monolithic 3D Inc. |
3D memory semiconductor devices and structures
|
CN112775539A
(en)
*
|
2019-11-07 |
2021-05-11 |
大族激光科技产业集团股份有限公司 |
Laser processing method and apparatus
|
US11908723B2
(en)
*
|
2021-12-03 |
2024-02-20 |
International Business Machines Corporation |
Silicon handler with laser-release layers
|