CA2233115A1 - Semiconductor substrate and method of manufacturing the same - Google Patents

Semiconductor substrate and method of manufacturing the same

Info

Publication number
CA2233115A1
CA2233115A1 CA002233115A CA2233115A CA2233115A1 CA 2233115 A1 CA2233115 A1 CA 2233115A1 CA 002233115 A CA002233115 A CA 002233115A CA 2233115 A CA2233115 A CA 2233115A CA 2233115 A1 CA2233115 A1 CA 2233115A1
Authority
CA
Canada
Prior art keywords
layer
manufacturing
porous
same
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002233115A
Other languages
French (fr)
Other versions
CA2233115C (en
Inventor
Nobuhiko Sato
Takao Yonehara
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CA2233115A1 publication Critical patent/CA2233115A1/en
Application granted granted Critical
Publication of CA2233115C publication Critical patent/CA2233115C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate

Abstract

To provide a manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer, and a wafer manufactured by that method, in the wafer manufactured by bonding, after bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosity layer and the high porosity layer in a surface formed on a main surface side of a first Si substrate 2 to transfer a non-porous layer onto a second substrate.
After separation at the high porosity layer, a residual low porosity thin layer is made non-porous by a smoothing process such as hydrogen annealing without using selective etching.
CA002233115A 1997-03-27 1998-03-25 Semiconductor substrate and method of manufacturing the same Expired - Fee Related CA2233115C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7554597 1997-03-27
JP9-075545 1997-03-27

Publications (2)

Publication Number Publication Date
CA2233115A1 true CA2233115A1 (en) 1998-09-27
CA2233115C CA2233115C (en) 2002-03-12

Family

ID=13579288

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002233115A Expired - Fee Related CA2233115C (en) 1997-03-27 1998-03-25 Semiconductor substrate and method of manufacturing the same

Country Status (8)

Country Link
US (1) US6143628A (en)
EP (1) EP0867922A3 (en)
KR (1) KR100260832B1 (en)
CN (1) CN1118085C (en)
AU (1) AU728331B2 (en)
CA (1) CA2233115C (en)
SG (1) SG68658A1 (en)
TW (1) TW404061B (en)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2233096C (en) 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US20050031663A1 (en) * 1997-05-16 2005-02-10 Cecilia Larsson Implant element
US6306729B1 (en) 1997-12-26 2001-10-23 Canon Kabushiki Kaisha Semiconductor article and method of manufacturing the same
JP4075021B2 (en) * 1997-12-26 2008-04-16 ソニー株式会社 Semiconductor substrate manufacturing method and thin film semiconductor member manufacturing method
TW437078B (en) 1998-02-18 2001-05-28 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
TW465101B (en) * 1998-09-04 2001-11-21 Canon Kk Semiconductor substrate and method for producing the same
JP2000349264A (en) * 1998-12-04 2000-12-15 Canon Inc Method for manufacturing, use and utilizing method of semiconductor wafer
JP2000223683A (en) * 1999-02-02 2000-08-11 Canon Inc Composite member and its isolation method, laminated substrate and its isolation method, relocation method of relocation layer, and method for manufacturing soi substrate
JP2000223682A (en) * 1999-02-02 2000-08-11 Canon Inc Processing method for basic body and production of semiconductor substrate
FR2789518B1 (en) * 1999-02-10 2003-06-20 Commissariat Energie Atomique MULTILAYER STRUCTURE WITH INTERNAL CONTROLLED STRESSES AND METHOD FOR PRODUCING SUCH A STRUCTURE
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
KR100434537B1 (en) * 1999-03-31 2004-06-05 삼성전자주식회사 Multi layer wafer with thick sacrificial layer and fabricating method thereof
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
US6287941B1 (en) 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6881644B2 (en) * 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
US6204151B1 (en) * 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment
JP2001015721A (en) * 1999-04-30 2001-01-19 Canon Inc Separation method of composite member and manufacture of thin film
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
FR2794893B1 (en) * 1999-06-14 2001-09-14 France Telecom PROCESS FOR PRODUCING A SILICON SUBSTRATE HAVING A THIN LAYER OF BURIED SILICON OXIDE
JP2001007362A (en) * 1999-06-17 2001-01-12 Canon Inc Semiconductor substrate and manufacture of solar cell
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6602760B2 (en) * 2000-12-21 2003-08-05 Interuniversitair Microelektronica Centrum (Imec) Method of producing a semiconductor layer on a substrate
US6699770B2 (en) * 2001-03-01 2004-03-02 John Tarje Torvik Method of making a hybride substrate having a thin silicon carbide membrane layer
EP1244139A2 (en) * 2001-03-23 2002-09-25 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
JP2002305293A (en) * 2001-04-06 2002-10-18 Canon Inc Method of manufacturing semiconductor member, and method of manufacturing semiconductor device
DE10128719A1 (en) * 2001-06-13 2002-12-19 Muehlbauer Ernst Gmbh & Co Kg Dentists impression tray of fillable rigidifiable walls has one wall stiff-ribbed or stiff throughout and fillable sleeve with outflows for mass placement.
FR2834820B1 (en) * 2002-01-16 2005-03-18 METHOD FOR CLEAVING LAYERS OF A MATERIAL WAFER
US6610582B1 (en) * 2002-03-26 2003-08-26 Northrop Grumman Corporation Field-assisted fusion bonding
US6943569B1 (en) * 2002-04-12 2005-09-13 Advanced Micro Devices, Inc. Method, system and apparatus to detect defects in semiconductor devices
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7008857B2 (en) * 2002-08-26 2006-03-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom
KR100854856B1 (en) * 2002-08-26 2008-08-28 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
EP1427010B1 (en) * 2002-11-29 2012-01-11 STMicroelectronics Srl Manufacturing method of a semiconductor substrate comprising at least a buried cavity
KR100570586B1 (en) * 2002-12-17 2006-04-13 (주)아이블포토닉스 Method for fabricating film structure comprising ferroelectric single crystal layer
US7399356B2 (en) * 2002-12-17 2008-07-15 Ibule Photonics, Inc. Method for preparation of ferroelectric single crystal film structure using deposition method
EP1441445B1 (en) * 2003-01-24 2006-11-29 STMicroelectronics S.r.l. A pipeline analog-to-digital converter with correction of inter-stage gain errors
JP2004265914A (en) * 2003-02-05 2004-09-24 Tadahiro Omi Method for producing semiconductor substrate
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7220656B2 (en) 2003-04-29 2007-05-22 Micron Technology, Inc. Strained semiconductor by wafer bonding with misorientation
JP2004335642A (en) * 2003-05-06 2004-11-25 Canon Inc Substrate and its producing process
EP1620583A4 (en) * 2003-05-06 2009-04-22 Canon Kk Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
US20050124137A1 (en) * 2003-05-07 2005-06-09 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method therefor
US7115480B2 (en) * 2003-05-07 2006-10-03 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7662701B2 (en) 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7008854B2 (en) * 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP2005005509A (en) * 2003-06-12 2005-01-06 Canon Inc Thin film transistor and method of manufacturing the same
FR2856841A1 (en) * 2003-06-24 2004-12-31 Commissariat Energie Atomique PROCESS FOR PRODUCING A STACKED THIN FILM TRANSFER STRUCTURE
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
FR2857983B1 (en) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator PROCESS FOR PRODUCING AN EPITAXIC LAYER
US7538010B2 (en) * 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
US7153753B2 (en) 2003-08-05 2006-12-26 Micron Technology, Inc. Strained Si/SiGe/SOI islands and processes of making same
US7091108B2 (en) * 2003-09-11 2006-08-15 Intel Corporation Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices
JP2005136383A (en) * 2003-10-09 2005-05-26 Canon Inc Organic semiconductor device, manufacturing method of the same and organic semiconductor device
US7542197B2 (en) * 2003-11-01 2009-06-02 Silicon Quest Kabushiki-Kaisha Spatial light modulator featured with an anti-reflective structure
JP2005157336A (en) * 2003-11-07 2005-06-16 Canon Inc Method for fabrication of optical element, and optical element having three-dimensional laminated structure
JP2005150235A (en) * 2003-11-12 2005-06-09 Three M Innovative Properties Co Semiconductor surface protection sheet and method therefor
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7060587B2 (en) * 2004-02-02 2006-06-13 Interuniversitair Microelektronica Centrum (Imec) Method for forming macropores in a layer and products obtained thereof
JP4771510B2 (en) * 2004-06-23 2011-09-14 キヤノン株式会社 Semiconductor layer manufacturing method and substrate manufacturing method
JP4950047B2 (en) * 2004-07-22 2012-06-13 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ Method for growing germanium and method for manufacturing semiconductor substrate
FR2874454B1 (en) 2004-08-19 2006-11-24 Commissariat Energie Atomique THIN-FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME
KR100609367B1 (en) * 2004-12-14 2006-08-08 한국전자통신연구원 Manufacturing method of silicon on insulator wafer
US7410883B2 (en) * 2005-04-13 2008-08-12 Corning Incorporated Glass-based semiconductor on insulator structures and methods of making same
US20070111468A1 (en) * 2005-07-19 2007-05-17 The Regents Of The University Of California Method for fabricating dislocation-free stressed thin films
US7544584B2 (en) 2006-02-16 2009-06-09 Micron Technology, Inc. Localized compressive strained semiconductor
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
JP5171016B2 (en) 2006-10-27 2013-03-27 キヤノン株式会社 Semiconductor member, manufacturing method of semiconductor article, and LED array using the manufacturing method
US7795113B2 (en) * 2006-12-21 2010-09-14 Imec Method for bonding a die or substrate to a carrier
KR100839376B1 (en) * 2007-01-08 2008-06-19 연세대학교 산학협력단 Porous silicon and preparation method thereof
FR2914493B1 (en) * 2007-03-28 2009-08-07 Soitec Silicon On Insulator DEMONTABLE SUBSTRATE.
JP2009094144A (en) * 2007-10-04 2009-04-30 Canon Inc Method of manufacturing light emitting device
JP5522917B2 (en) * 2007-10-10 2014-06-18 株式会社半導体エネルギー研究所 Manufacturing method of SOI substrate
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8871610B2 (en) * 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
JP5184448B2 (en) * 2009-06-23 2013-04-17 富士紡ホールディングス株式会社 Polishing pad, method for producing the same, and polishing method
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
DE102009046581A1 (en) 2009-11-10 2011-05-12 Robert Bosch Gmbh Manufacturing method for a porous microneedle array and corresponding porous microneedle array and corresponding substrate composite
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
CN104078336B (en) * 2014-07-02 2018-01-09 上海朕芯微电子科技有限公司 Power device manufacturing process without substrat structure
US10032870B2 (en) * 2015-03-12 2018-07-24 Globalfoundries Inc. Low defect III-V semiconductor template on porous silicon
US9620466B1 (en) * 2015-11-30 2017-04-11 Infineon Technologies Ag Method of manufacturing an electronic device having a contact pad with partially sealed pores
US9755015B1 (en) 2016-05-10 2017-09-05 Globalfoundries Inc. Air gaps formed by porous silicon removal
US20180068886A1 (en) * 2016-09-02 2018-03-08 Qualcomm Incorporated Porous semiconductor layer transfer for an integrated circuit structure
DE102019108754A1 (en) 2019-03-06 2020-09-10 Infineon Technologies Ag SEMICONDUCTOR DEVICE WITH A POROUS AREA, WAFER COMPOSITE STRUCTURE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
RU2733941C2 (en) * 2019-04-01 2020-10-08 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Semiconductor structure manufacturing method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
EP1251556B1 (en) * 1992-01-30 2010-03-24 Canon Kabushiki Kaisha Process for producing semiconductor substrate
JP3250673B2 (en) * 1992-01-31 2002-01-28 キヤノン株式会社 Semiconductor element substrate and method of manufacturing the same
JP3257580B2 (en) * 1994-03-10 2002-02-18 キヤノン株式会社 Manufacturing method of semiconductor substrate
JP3293736B2 (en) * 1996-02-28 2002-06-17 キヤノン株式会社 Semiconductor substrate manufacturing method and bonded substrate
JP3381443B2 (en) * 1995-02-02 2003-02-24 ソニー株式会社 Method for separating semiconductor layer from substrate, method for manufacturing semiconductor device, and method for manufacturing SOI substrate
DE69628505T2 (en) * 1995-07-21 2004-05-06 Canon K.K. Semiconductor substrate and its manufacturing process
CN1132223C (en) * 1995-10-06 2003-12-24 佳能株式会社 Semiconductor substrate and producing method thereof
EP0797258B1 (en) * 1996-03-18 2011-07-20 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
EP0867919B1 (en) * 1997-03-26 2004-09-08 Canon Kabushiki Kaisha Semiconductor substrate and process for producing same

Also Published As

Publication number Publication date
CN1118085C (en) 2003-08-13
AU5969998A (en) 1998-10-01
US6143628A (en) 2000-11-07
CN1199920A (en) 1998-11-25
EP0867922A2 (en) 1998-09-30
EP0867922A3 (en) 1999-03-17
KR100260832B1 (en) 2000-07-01
SG68658A1 (en) 1999-11-16
KR19980080778A (en) 1998-11-25
AU728331B2 (en) 2001-01-04
TW404061B (en) 2000-09-01
CA2233115C (en) 2002-03-12

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