CA2284666A1 - Incandescent microcavity lightsource and method - Google Patents
Incandescent microcavity lightsource and method Download PDFInfo
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- CA2284666A1 CA2284666A1 CA002284666A CA2284666A CA2284666A1 CA 2284666 A1 CA2284666 A1 CA 2284666A1 CA 002284666 A CA002284666 A CA 002284666A CA 2284666 A CA2284666 A CA 2284666A CA 2284666 A1 CA2284666 A1 CA 2284666A1
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- incandescent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
- H01K1/04—Incandescent bodies characterised by the material thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/28—Envelopes; Vessels
- H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
- H01K3/005—Methods for coating the surface of the envelope
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
- H01K3/02—Manufacture of incandescent bodies
Abstract
An incandescent microcavity lightsource (30) has an incandescent active region (13) capable of spontaneous light emission when heated. The incandescent microcavity lightsource (30) controls the spontaneous light emissions from said active region (13).
Description
INCANDESCENT MICROCAVITY LIGHTSOURCE AND METHOD
Cross-reference is made to U.S. Patent No. 5,469,018, issued November 21, 1995, entitled RESONANT MICROCAVITY DISPLAY, and U.S. Patent Application Serial No. 08/581,622, filed January 18, 1996, entitled RESONANT MICROCAVITY DISPLAY, both of which are incorporated herein by reference.
Field of the Invention The present invention relates to a microcavity lightsource and method therefor.
Background of the Invention Incandescence is the spontaneous emission of radiation by a hot body. The emission from an idealized "blackbody" is a well understood and described in many physics texts. The output consists of a broad emission whose peak is found at a wavelength given by ~ _ 2.898 x 106 /T (nmlK) (see Fig. 1 ). As a function of wavelength, the 2 0 emission is asymmetric with approximately 75 % of the emission occurring on the long wavelength side of the peak. In addition, the emission is quite broad, particularly on the long wavelength side.
Because of this, a blackbody must be heavily filtered at a large cost in efficiency to produce narrowband light.
2 5 A clear example of this, is the inefficiency of a blackbody in the production of visible light. If the output of a blackbody is expressed in photometric units, it is found that a temperature of 2600°K is required to obtain a luminous efficacy of 10 lumens/Watt, and a temperature of greater than 3500°K to obtain 40 Im/Watt. By comparison, an ideal narrowband source of green light would have a luminous efficacy as high as 683 Im/W, and an ideal source of white light could have a luminous efficacy of greater than 300 Im/W.
The maximum luminous efficacy for a blackbody is 95 lumen/Watt which occurs at a temperature of 6625°K. Since there are few solid materials which can operate at a temperature above 3000°K, the search for efficient sources of visible incandescence has been primarily a search for materials which can be operated at the highest possible temperatures.
The emission of real materials may be characterized by a spectral emissivity which describes its spectra! radiant emittance as a fraction of that of a blackbody at the same temperature. If the emissivity were independent of wavelength, then the emission would have the same wavelength dependence as a blackbody at the same temperature. As an example, tungsten, which is the primary constituent of most visible incandescent sources, has a larger fraction of its emission in the visible than a comparable blackbody. However, at its melting point the luminous efficacy of tungsten is only 53 ImIW, and at practical operating temperatures it has a luminous efficacy in 2 o the range of 15-30 Im/W.
Clearly, a great improvement in the efficiency of incandescent lamps for many applications could be achieved if a method could be found to eliminate unwanted emission. For example, B. Hisdal in the Journal of the Optical Society of America, Vol. 52, Page 395, incorporated herein by reference, has calculated that a tungsten filament which has its normal emissivity for wavelengths shorter than 600 nm and an emissivity of zero for wavelengths greater than 600 nm, would give an efficacy of 407 Im/W when operated at 3000°K.
For visible lamps the most successful method developed to date 3 o for reducing the unwanted infrared emission consists of surrounding ,, the incandescent source with a selective thermal reflector. This reflector passes visible radiation while reflecting the infrared radiation back onto the filament for reabsorption. This is the working principle r of the General Electric IRPAR (Infra-Red Parabolic Aluminum Reflector) lamp (see Photonics Spectra, Page 40, January 1991, which is incorporated herein by reference) which is approximately one-third more efficient than a similar lamp without the reflector. Unfortunately, the practical application of this technique depends on the formation of an image of the filament which is accurately aligned onto the source.
1o Other factors which limit the efficiency gain are the low absorption of the tungsten filament (30%-40%), and practical limits on the transparency, reflectivity and cutoff of the thermal reflector.
Incandescent sources are also characterized by highly divergent emission which is typically almost isotropic. Far applications where less divergence is desired, stops, collectors and condensing optics are required. The cost of this optical system frequently exceeds the cost of the lamp which generates the light. In many cases, efficiency must be sacrificed to match the etendue of an optical system.
Optical microcavities used to control the spontaneous emission exist and are described in Physics and Device Applications of Optical Microcavities, H. Yokoyama, 256 Science 66 (1992), Cavity Quantum Electrodynamics, E.A. Hinds, in Advances in Atomic, Molecular, and Optical Physics, eds. D. Bates and B. Bederson, Vol. 28, pp. 237-289 (1991 ), and in the U.S. Patent of Jacobsen et al., 5,469,018, and in U.S. Patent Application Serial No. 08/581,632, all of which are incorporated herein by reference. These optical microcavities have the ability to change the decay rate, the directional characteristics and the frequency characteristics of luminescence centers located within them.
The study of these phenomena is entitled cavity QED (quantum electrodynamics) Physically, these microcavities have dimensions WO 98!43281 PCT/US98/05977 ranging from less than one wavelength of the emitted light up to tens of wavelengths. Microcavities with semiconductor active layers are being developed as semiconductor lasers and light-emitting diodes (LEDs), and microcavities with phosphor active layers are being developed for display and illumination applications. In all of these devices the efficiency is limited by the low intrinsic efficiency of the semiconductor material or phosphor which generates the light.
Incandescent sources have been formed which are contained within physical microcavities. These are described in the U.S. Patents l0 of Muller et al. (5,285,131 ), Daehler (4,724,356), and Bloomberg et al. (5,500,569), all of which are incorporated herein by reference.
However, these physical cavities are not designed as optical cavities and exhibit no modification of the spontaneous emission of the incandescent source incorporated.
Summary of the Invention:
Accordingly, it is an object of the present invention to provide an incandescent lightsource which emits only a selected range or ranges of wavelengths so that inefficient passive filters need not be 2 o used. These wavelengths may be infrared, visible or ultraviolet.
It is a further object of this invention to provide an incandescent lightsource which emits light only in a selected direction or directions so that expensive and inefficient passive optical elements need not be used.
It is another object of this invention to provide an incandescent lightsource which emits polarized light so that inefficient passive optical polarizers need not be used.
It is still another object of this invention to provide an incandescent lightsource of improved efficiency through the 3 o enhancement of desired emissions.
Cross-reference is made to U.S. Patent No. 5,469,018, issued November 21, 1995, entitled RESONANT MICROCAVITY DISPLAY, and U.S. Patent Application Serial No. 08/581,622, filed January 18, 1996, entitled RESONANT MICROCAVITY DISPLAY, both of which are incorporated herein by reference.
Field of the Invention The present invention relates to a microcavity lightsource and method therefor.
Background of the Invention Incandescence is the spontaneous emission of radiation by a hot body. The emission from an idealized "blackbody" is a well understood and described in many physics texts. The output consists of a broad emission whose peak is found at a wavelength given by ~ _ 2.898 x 106 /T (nmlK) (see Fig. 1 ). As a function of wavelength, the 2 0 emission is asymmetric with approximately 75 % of the emission occurring on the long wavelength side of the peak. In addition, the emission is quite broad, particularly on the long wavelength side.
Because of this, a blackbody must be heavily filtered at a large cost in efficiency to produce narrowband light.
2 5 A clear example of this, is the inefficiency of a blackbody in the production of visible light. If the output of a blackbody is expressed in photometric units, it is found that a temperature of 2600°K is required to obtain a luminous efficacy of 10 lumens/Watt, and a temperature of greater than 3500°K to obtain 40 Im/Watt. By comparison, an ideal narrowband source of green light would have a luminous efficacy as high as 683 Im/W, and an ideal source of white light could have a luminous efficacy of greater than 300 Im/W.
The maximum luminous efficacy for a blackbody is 95 lumen/Watt which occurs at a temperature of 6625°K. Since there are few solid materials which can operate at a temperature above 3000°K, the search for efficient sources of visible incandescence has been primarily a search for materials which can be operated at the highest possible temperatures.
The emission of real materials may be characterized by a spectral emissivity which describes its spectra! radiant emittance as a fraction of that of a blackbody at the same temperature. If the emissivity were independent of wavelength, then the emission would have the same wavelength dependence as a blackbody at the same temperature. As an example, tungsten, which is the primary constituent of most visible incandescent sources, has a larger fraction of its emission in the visible than a comparable blackbody. However, at its melting point the luminous efficacy of tungsten is only 53 ImIW, and at practical operating temperatures it has a luminous efficacy in 2 o the range of 15-30 Im/W.
Clearly, a great improvement in the efficiency of incandescent lamps for many applications could be achieved if a method could be found to eliminate unwanted emission. For example, B. Hisdal in the Journal of the Optical Society of America, Vol. 52, Page 395, incorporated herein by reference, has calculated that a tungsten filament which has its normal emissivity for wavelengths shorter than 600 nm and an emissivity of zero for wavelengths greater than 600 nm, would give an efficacy of 407 Im/W when operated at 3000°K.
For visible lamps the most successful method developed to date 3 o for reducing the unwanted infrared emission consists of surrounding ,, the incandescent source with a selective thermal reflector. This reflector passes visible radiation while reflecting the infrared radiation back onto the filament for reabsorption. This is the working principle r of the General Electric IRPAR (Infra-Red Parabolic Aluminum Reflector) lamp (see Photonics Spectra, Page 40, January 1991, which is incorporated herein by reference) which is approximately one-third more efficient than a similar lamp without the reflector. Unfortunately, the practical application of this technique depends on the formation of an image of the filament which is accurately aligned onto the source.
1o Other factors which limit the efficiency gain are the low absorption of the tungsten filament (30%-40%), and practical limits on the transparency, reflectivity and cutoff of the thermal reflector.
Incandescent sources are also characterized by highly divergent emission which is typically almost isotropic. Far applications where less divergence is desired, stops, collectors and condensing optics are required. The cost of this optical system frequently exceeds the cost of the lamp which generates the light. In many cases, efficiency must be sacrificed to match the etendue of an optical system.
Optical microcavities used to control the spontaneous emission exist and are described in Physics and Device Applications of Optical Microcavities, H. Yokoyama, 256 Science 66 (1992), Cavity Quantum Electrodynamics, E.A. Hinds, in Advances in Atomic, Molecular, and Optical Physics, eds. D. Bates and B. Bederson, Vol. 28, pp. 237-289 (1991 ), and in the U.S. Patent of Jacobsen et al., 5,469,018, and in U.S. Patent Application Serial No. 08/581,632, all of which are incorporated herein by reference. These optical microcavities have the ability to change the decay rate, the directional characteristics and the frequency characteristics of luminescence centers located within them.
The study of these phenomena is entitled cavity QED (quantum electrodynamics) Physically, these microcavities have dimensions WO 98!43281 PCT/US98/05977 ranging from less than one wavelength of the emitted light up to tens of wavelengths. Microcavities with semiconductor active layers are being developed as semiconductor lasers and light-emitting diodes (LEDs), and microcavities with phosphor active layers are being developed for display and illumination applications. In all of these devices the efficiency is limited by the low intrinsic efficiency of the semiconductor material or phosphor which generates the light.
Incandescent sources have been formed which are contained within physical microcavities. These are described in the U.S. Patents l0 of Muller et al. (5,285,131 ), Daehler (4,724,356), and Bloomberg et al. (5,500,569), all of which are incorporated herein by reference.
However, these physical cavities are not designed as optical cavities and exhibit no modification of the spontaneous emission of the incandescent source incorporated.
Summary of the Invention:
Accordingly, it is an object of the present invention to provide an incandescent lightsource which emits only a selected range or ranges of wavelengths so that inefficient passive filters need not be 2 o used. These wavelengths may be infrared, visible or ultraviolet.
It is a further object of this invention to provide an incandescent lightsource which emits light only in a selected direction or directions so that expensive and inefficient passive optical elements need not be used.
It is another object of this invention to provide an incandescent lightsource which emits polarized light so that inefficient passive optical polarizers need not be used.
It is still another object of this invention to provide an incandescent lightsource of improved efficiency through the 3 o enhancement of desired emissions.
It is yet another object of this invention to provide an incandescent lightsource of improved efficiency through the suppression of undesired emissions.
It is also an object of this invention to provide an incandescent lightsource of improved efficiency through the reclamation or reabsorption of undesired emissions.
It is a further object of this invention to provide a microcavity lightsource of greater efficiency than semiconductor or phosphor based microcavity lightsources.
To this end, the subject invention, the Incandescent Microcavity Lightsource (IML), is a lightsource which uses at least one incandescent region or filament which is part of an optical microcavity.
The microcavity may be formed on a transparent or opaque substrate using standard processes of microelectronics. The filament may be wholly within the optical cavity or the surface of the filament may form one of the boundaries of the optical cavity.
The filament may emit infrared, visible, or ultraviolet light when heated. The filament may be suspended to limit thermal conduction 2o and the cavity may be evacuated or filled with a gas to form a controlled atmosphere in order to enhance performance.
Surfaces or structures which are reflective, defining the optical microcavity, are formed adjacent to the filament. These reflectors can fundamentally suppress spontaneous emission in undesired directions, wavelengths or polarizations through the mechanisms described by cavity QED theory. Reflectors which perform this function must be located sufficiently close to the emitting surface and at the proper distance so that the individual Bipolar emissions suffer destructive interference. These same, or other, reflectors can return to the filament for reabsorption, energy from undesired emissions. Any of these reflectors can form physical boundaries of the microcavity.
To generate output, these or other reflectors can enhance spontaneous emission in desired directions, wavelengths and polarizations through the mechanisms described by cavity QED theory.
Reflectors which perform this function must be located sufficiently close to the emitting surface and at the proper distance so that the individual Bipolar emissions undergo constructive interference. In addition, surfaces or openings can be formed which are transparent to desired emissions. Any of these can form physical boundaries of the microcavity.
Other objects and advantages of the present invention will become apparent to those skilled in the art from the following detailed description of the preferred embodiments when read in light of the accompanying drawings.
(Brief Description ofthe Figures Fig. 1 depicts a graph of emission from an idealized "blackbody".
Fig. 2a depicts an embodiment of an incandescent microcavity 2 0 of the invention.
Fig. 2b depicts the embodiment of Fig. 2b taken along lines 2b-2b.
The embodiment described herein refers to an electrically heated incandescent source of directional (this direction will be referred to as upward) near-IR (1-2 ,um) emission. This source exhibits suppression and reabsorption of far IR emission for all directions and reabsorption of near-IR emission into undesired directions.
~..
_7_ Preferably, a doped polysilicon filament 10 is to be used.
Filament 10 can alternatively be comprised of tungsten and of other metals such as tantalum, platinum, palladium, molybdenum, zirconium, - titanium, nickel, and chromium, or a carbide, nitride, boride, silicide, or oxide of these metals. The filament is preferably operated at a temperature of approximately 1500-1600 K. In the absence of the microcavity, the filament will produce radiation which spectrally resembles a blackbody curve with a peak near 2 ,um. In the absence of the microcavity, the angular distribution of the emission which escapes each surface of the filament would approximate a lambertian source (cosine theta dependence) due to the increased reabsorption for emissions parallel to the surface. In the absence of the microcavity only a small fraction, less than 10%, of the emitted energy will correspond to wavelengths in the range of 1-2 ,um emitted into the upward direction (arrow 20 in Fig. 2a, 2b). Mirrors can be used to reflect emissions from other directions into the upward direction 20 but a corresponding increase in the etendue of the source would result.
With reference to Fig. 2a, 2b, the layered structure forming the 2 0 incandescent microcavity lamp 30 is shown. A silicon substrate 1, is shown. A highly reflective silver layer 2, is formed on the substrate and then a thin (approx. 100 nm or less) protective coating 3 is formed over the silver layer 2. This structure is referred to as the lower mirror 21. The lower mirror 21 as well as the upper window/mirror 23 can also be formed as taught in U.S. Patent No. 5,469,018 with multiple layers of materials having different indexes of refraction. The protective layer 3 is formed of a material such as silicon nitride which displays resistance to etching by nitric acid. Silicon nitride is substantially transparent for wavelengths from the UV to 8 ,um in the far-IR range. Other appropriate protective materials may be used.
_g_ An evacuated cavity is shown as 12. Alternatively, the cavity could include a controlled atmosphere having a desired gas or mixture of gases. This cavity 12 is formed by first depositing a sacrificial layer (not shown) such as phosphosilicate glass (PSG) of approx 0.7 micron thickness onto the protective layer 3. This sacrificial layer defines the transverse edges of the cavity 12 as shown. Onto this is grown the filament structure 13 including thin (approximately 100 nm or less) protective silicon nitride layers 8 and 9, and a doped polysilicon filament 10. The filament structure 13 may be grown using standard techniques including photolithography, plasma etching, and ion implantation. Boron, phosphorous or other dopants may be used.
Long filaments 10 which are narrow in the transverse dimension (transverse direction 22) and thin in the vertical dimension (upward direction 20) are formed. The filaments 10 need to be sufficiently long to limit heat conduction but short enough to limit sagging and touching of the lower mirror 21 when heated. If excessive sagging is indicated additional support structures (not shown) can be formed underneath the filament structure 13 through patterning of the protective layer 3 applied to the silicon layer 2 of the lower mirror 21. If excessive heat conduction is encountered, the filaments 10 can be made longer with the inclusion of supports of small cross section. Filament lengths in the range of 10-200 Nm and widths of 1-10 ,um are suitable.
Due to intrinsic reabsorption, light which escapes the lower surface 14 of the filament will not be isotropic, but weighted towards emissions directed perpendicular to this surface. This preferred directionality, combined with the relatively large transverse dimension (transverse direction 22) of the filament 10, will lead to reabsorption by the filament 10 of much of this light after reflection from the lower mirror 21 (silver layer 2).
i . ..
_g_ These dominant emissions directed perpendicular to this lower filament surface 14 will primarily be the result of dipoles which are parallel to the plain of the filament 10. For wavelengths in the far-IR, - this lower mirror 21 (silver layer 2) is closer than about one-quarter wavelength to the dipoles involved. As described in the above incorporated article of Hinds, and other literature on cavity QED, the location of this mirror 21 will lead to fundamental suppression of far-IR
emissions by these dipoles. For this effect to occur, the mirror 21 must be within the appropriate coherence length for the emission so that destructive interference can result. Overall, the proper placement of the lower mirror 21 will result in a decrease in the rate of emission from the lower surface 14 of the filament and substantial reabsorption of what emissions remain. A corresponding increase in the relative emission from the upper or front surface 15 will occur.
A second sacrificial layer of PSG is over the first sacrificed layer (not shown) and encasing the filament structure 13 in order to completely define cavity 12. The thickness of this layer may be approximately 0.7 ,um.
An output or upper window/mirror 23 consisting of a thin layer 24, approximately 200 nm, of protective material followed by a thicker layer 26 of indium-tin oxide (ITO), In2O3 doped with Sn, is grown on this second sacrificial layer (not shown). The protective layer 24 should be formed of a material such as silicon nitride which displays resistance to etching by nitric acid. The thicker layer 25 of indium-tin oxide (ITO) can be grown using a variety of techniques including chemical vapor deposition. This ITO layer 25 must be sufficiently thick to support atmospheric pressure if chamber 12 is evacuated.
Depending on the exact shape of the structure a thickness of 2-3 ,um should be adequate. Etch channels 7 and channels for electrical 3 0 connections 11 must be patterned into this layer. A review of properties and techniques of growth of ITO can be found in Evaporated Sn-doped In203 films: Basic Optical Properties and Applications to Energy-Efficient Windows, I. Hamberg and C.G. Grangvist, Journal of Applied Physics, Vol. 60, No. 1 1, pp. 8123-8159, December 1, 1986, which is incorporated herein by reference.
Silicon nitride is substantially transparent for wavelengths from the UV to 8 gum in the far-IR. In this embodiment the ITO should be adequately doped to produce a reflectivity of greater than 80% for wavelengths longer than approximately 4 ,~,im and more than 80%
1 o transmitting for wavelengths shorter than approximately 2 Nm.
Due to intrinsic reabsorption, light which escapes the upper surface 15 of the filament 10 will be weighted towards emissions directed upward (direction 201. This preferred directionality, combined with the relatively large transverse dimension (direction 22) of the filament 10 will lead to reabsorption by the filament 10 of much of the far-IR emission after reflection from upper window/mirror 23.
For wavelengths in the far-IR this upper windowlmirror 23 is closer than one-quarter wavelength to the dipoles involved. This will lead to fundamental suppression of far-IR emissions by these dipoles.
For this effect to occur the mirror 23 must be within the appropriate coherence length for the emission so that destructive interference can occur. With reference to the desired emission wavelengths, 1-2 Nm, the upper window/mirror 23 is substantially transparent allowing these emissions to pass upwardly through window/mirror 23 of the tamp.
Overall, the upper window/mirror 23 will result in a decrease in the rate of emission of far-IR radiation from the upper surface is of the figment 10 and substantial reabsorption of what far-IR emissions remain. A corresponding increase in the fractional near-IA emission from the upper surface 15 will occur.
Because the vertical dimension (direction 20) of the filament 10 is substantially less than the other dimensions only a small fraction of the total emission will escape the side surfaces of the filament.
- Emissions from the sides 26 of the filament 10 will to some degree be reflected by the cavity mirrors 21, 23, and reabsorbed by the filament 10. A corresponding increase in the fractional emission from the upper surface 15 will occur.
Overall, the proper placement of the lower and upper mirrors 21, 23, will result in a relative increase in the fractional emission of near-IR
light from the upper surface 15 of the filament 10.
Once the upper window/mirror 23 is formed, the sacrificial layers of PSG are removed by etching with nitric acid. Following the nitric acid etch, the lamp is placed into a vacuum system and evacuated or a controlled atmosphere including one or more gases is introduced. The etch channels 7, are sealed with an appropriate material 5, such as the protective material used earlier. Finally, metal pads 11 are grown to allow electrical connection to the filament (Fig.
2b).
The use of a vacuum limits heat conduction to the walls of the cavity 12. However, the lamp 30 can be attached to a heat sink (not shown) to cool the walls, if required.
In other embodiments the substrate 1 may consist of another opaque substrate material possibly a metal or a transparent material such as alumina, sapphire, quartz or glass.
Materials to be used as mirrors or windows 21, 23, can consist of metals, transparent dielectrics, or materials such as indium-tin oxide which are substantially reflective at some wavelengths and substantially transparent at other wavelengths. 1n addition multilayer stacks consisting of metals, materials such as ITO, and dielectrics in 3 0 combination may be used. These layers can be reflective at all WO 98/43281 PCT/i1S98/05977 wavelengths concerned forming a mirror or may be transparent at some or all wavelengths forming an output window. Combination mirror/windows which consist of reflective material with holes of an appropriate size to allow shorter wavelengths to pass can also be used. Appropriate layers to protect these mirrors and windows from later etching stages can be formed as required.
In other embodiments the distance between mirrors 21, 23, and the filament 10 may be selected to suppress undesired wavelengths other than the far-1R. However, difficulties with surface plasmon production and direct energy transfer to these mirrors can occur in certain cases (see E.A. Hinds identified abovel. Distances less than a quarter of a wavelength and generally less than a tenth of a wavelength can cause such conductive energy transfer to the mirrors with a loss of radiated energy from the lamp 30. In these cases, the materials and distances involved along with the shapes of the surfaces are adjusted accordingly.
In other embodiments the distance between one or both of the mirrors 21, 23, and the filament 10 may be selected to enhance desired emissions through constructive interference. By way of 2 0 example, the embodiment can have one or more spaced upper window/mirror and one or more lower window/mirrors. These mirrors can be positioned relative to the filament in order to enhance and/or suppress certain emissions. Placement of mirrors such that antipodes of the electric field are produced at the surface of the filament can enhance emission while placement of mirrors such that nodes of the electric field are produced at the surface of the filament can suppress emissions.
In other embodiments the output window/mirror 23 can be selected to pass wavelengths other than the near-IR. Windows can be formed which allow emission from any single or multiple direction.
Windows can be formed which exhibit birefringence resulting in a partially or substantially polarized output. Windows can be formed which allow the emission of different polarizations andlor wavelengths - into different directions.
In still other embodiments the filament 10 may consist of a high temperature refractory material. High temperature refractory materials suitable for incandescent lamps 30 are well known in the literature.
Tables of suitable materials are presented in The Chemistry of Artificial Lighting Devices, R.C. Ropp (Elsevier, Amsterdam, 7993), which is incorporated herein by reference. Appropriate layers to protect the filament from later etching stages may be formed it required. Sacrificial layers of materials other than PSG may be formed for use with etchants other than nitric acid.
In other embodiments, an electrically heated Better material can be added to the cavity to aid in maintenance of the vacuum once the cavity is sealed. The use of Betters is well known in vacuum science.
In other embodiments the output window may consist merely of an open upper surface with the filament operated in air or other ambient media.
From the above, it is evident that incandescent light sources can be formed that are more efficient than those currently existing and that are specifically designed for particular needs.
Other features, aspects and objects of the invention can be obtained from a review of the figures and the claims.
It is to be understood that other embodiments of the invention can be developed and fall within the spirit and scope of the invention and claims.
It is also an object of this invention to provide an incandescent lightsource of improved efficiency through the reclamation or reabsorption of undesired emissions.
It is a further object of this invention to provide a microcavity lightsource of greater efficiency than semiconductor or phosphor based microcavity lightsources.
To this end, the subject invention, the Incandescent Microcavity Lightsource (IML), is a lightsource which uses at least one incandescent region or filament which is part of an optical microcavity.
The microcavity may be formed on a transparent or opaque substrate using standard processes of microelectronics. The filament may be wholly within the optical cavity or the surface of the filament may form one of the boundaries of the optical cavity.
The filament may emit infrared, visible, or ultraviolet light when heated. The filament may be suspended to limit thermal conduction 2o and the cavity may be evacuated or filled with a gas to form a controlled atmosphere in order to enhance performance.
Surfaces or structures which are reflective, defining the optical microcavity, are formed adjacent to the filament. These reflectors can fundamentally suppress spontaneous emission in undesired directions, wavelengths or polarizations through the mechanisms described by cavity QED theory. Reflectors which perform this function must be located sufficiently close to the emitting surface and at the proper distance so that the individual Bipolar emissions suffer destructive interference. These same, or other, reflectors can return to the filament for reabsorption, energy from undesired emissions. Any of these reflectors can form physical boundaries of the microcavity.
To generate output, these or other reflectors can enhance spontaneous emission in desired directions, wavelengths and polarizations through the mechanisms described by cavity QED theory.
Reflectors which perform this function must be located sufficiently close to the emitting surface and at the proper distance so that the individual Bipolar emissions undergo constructive interference. In addition, surfaces or openings can be formed which are transparent to desired emissions. Any of these can form physical boundaries of the microcavity.
Other objects and advantages of the present invention will become apparent to those skilled in the art from the following detailed description of the preferred embodiments when read in light of the accompanying drawings.
(Brief Description ofthe Figures Fig. 1 depicts a graph of emission from an idealized "blackbody".
Fig. 2a depicts an embodiment of an incandescent microcavity 2 0 of the invention.
Fig. 2b depicts the embodiment of Fig. 2b taken along lines 2b-2b.
The embodiment described herein refers to an electrically heated incandescent source of directional (this direction will be referred to as upward) near-IR (1-2 ,um) emission. This source exhibits suppression and reabsorption of far IR emission for all directions and reabsorption of near-IR emission into undesired directions.
~..
_7_ Preferably, a doped polysilicon filament 10 is to be used.
Filament 10 can alternatively be comprised of tungsten and of other metals such as tantalum, platinum, palladium, molybdenum, zirconium, - titanium, nickel, and chromium, or a carbide, nitride, boride, silicide, or oxide of these metals. The filament is preferably operated at a temperature of approximately 1500-1600 K. In the absence of the microcavity, the filament will produce radiation which spectrally resembles a blackbody curve with a peak near 2 ,um. In the absence of the microcavity, the angular distribution of the emission which escapes each surface of the filament would approximate a lambertian source (cosine theta dependence) due to the increased reabsorption for emissions parallel to the surface. In the absence of the microcavity only a small fraction, less than 10%, of the emitted energy will correspond to wavelengths in the range of 1-2 ,um emitted into the upward direction (arrow 20 in Fig. 2a, 2b). Mirrors can be used to reflect emissions from other directions into the upward direction 20 but a corresponding increase in the etendue of the source would result.
With reference to Fig. 2a, 2b, the layered structure forming the 2 0 incandescent microcavity lamp 30 is shown. A silicon substrate 1, is shown. A highly reflective silver layer 2, is formed on the substrate and then a thin (approx. 100 nm or less) protective coating 3 is formed over the silver layer 2. This structure is referred to as the lower mirror 21. The lower mirror 21 as well as the upper window/mirror 23 can also be formed as taught in U.S. Patent No. 5,469,018 with multiple layers of materials having different indexes of refraction. The protective layer 3 is formed of a material such as silicon nitride which displays resistance to etching by nitric acid. Silicon nitride is substantially transparent for wavelengths from the UV to 8 ,um in the far-IR range. Other appropriate protective materials may be used.
_g_ An evacuated cavity is shown as 12. Alternatively, the cavity could include a controlled atmosphere having a desired gas or mixture of gases. This cavity 12 is formed by first depositing a sacrificial layer (not shown) such as phosphosilicate glass (PSG) of approx 0.7 micron thickness onto the protective layer 3. This sacrificial layer defines the transverse edges of the cavity 12 as shown. Onto this is grown the filament structure 13 including thin (approximately 100 nm or less) protective silicon nitride layers 8 and 9, and a doped polysilicon filament 10. The filament structure 13 may be grown using standard techniques including photolithography, plasma etching, and ion implantation. Boron, phosphorous or other dopants may be used.
Long filaments 10 which are narrow in the transverse dimension (transverse direction 22) and thin in the vertical dimension (upward direction 20) are formed. The filaments 10 need to be sufficiently long to limit heat conduction but short enough to limit sagging and touching of the lower mirror 21 when heated. If excessive sagging is indicated additional support structures (not shown) can be formed underneath the filament structure 13 through patterning of the protective layer 3 applied to the silicon layer 2 of the lower mirror 21. If excessive heat conduction is encountered, the filaments 10 can be made longer with the inclusion of supports of small cross section. Filament lengths in the range of 10-200 Nm and widths of 1-10 ,um are suitable.
Due to intrinsic reabsorption, light which escapes the lower surface 14 of the filament will not be isotropic, but weighted towards emissions directed perpendicular to this surface. This preferred directionality, combined with the relatively large transverse dimension (transverse direction 22) of the filament 10, will lead to reabsorption by the filament 10 of much of this light after reflection from the lower mirror 21 (silver layer 2).
i . ..
_g_ These dominant emissions directed perpendicular to this lower filament surface 14 will primarily be the result of dipoles which are parallel to the plain of the filament 10. For wavelengths in the far-IR, - this lower mirror 21 (silver layer 2) is closer than about one-quarter wavelength to the dipoles involved. As described in the above incorporated article of Hinds, and other literature on cavity QED, the location of this mirror 21 will lead to fundamental suppression of far-IR
emissions by these dipoles. For this effect to occur, the mirror 21 must be within the appropriate coherence length for the emission so that destructive interference can result. Overall, the proper placement of the lower mirror 21 will result in a decrease in the rate of emission from the lower surface 14 of the filament and substantial reabsorption of what emissions remain. A corresponding increase in the relative emission from the upper or front surface 15 will occur.
A second sacrificial layer of PSG is over the first sacrificed layer (not shown) and encasing the filament structure 13 in order to completely define cavity 12. The thickness of this layer may be approximately 0.7 ,um.
An output or upper window/mirror 23 consisting of a thin layer 24, approximately 200 nm, of protective material followed by a thicker layer 26 of indium-tin oxide (ITO), In2O3 doped with Sn, is grown on this second sacrificial layer (not shown). The protective layer 24 should be formed of a material such as silicon nitride which displays resistance to etching by nitric acid. The thicker layer 25 of indium-tin oxide (ITO) can be grown using a variety of techniques including chemical vapor deposition. This ITO layer 25 must be sufficiently thick to support atmospheric pressure if chamber 12 is evacuated.
Depending on the exact shape of the structure a thickness of 2-3 ,um should be adequate. Etch channels 7 and channels for electrical 3 0 connections 11 must be patterned into this layer. A review of properties and techniques of growth of ITO can be found in Evaporated Sn-doped In203 films: Basic Optical Properties and Applications to Energy-Efficient Windows, I. Hamberg and C.G. Grangvist, Journal of Applied Physics, Vol. 60, No. 1 1, pp. 8123-8159, December 1, 1986, which is incorporated herein by reference.
Silicon nitride is substantially transparent for wavelengths from the UV to 8 gum in the far-IR. In this embodiment the ITO should be adequately doped to produce a reflectivity of greater than 80% for wavelengths longer than approximately 4 ,~,im and more than 80%
1 o transmitting for wavelengths shorter than approximately 2 Nm.
Due to intrinsic reabsorption, light which escapes the upper surface 15 of the filament 10 will be weighted towards emissions directed upward (direction 201. This preferred directionality, combined with the relatively large transverse dimension (direction 22) of the filament 10 will lead to reabsorption by the filament 10 of much of the far-IR emission after reflection from upper window/mirror 23.
For wavelengths in the far-IR this upper windowlmirror 23 is closer than one-quarter wavelength to the dipoles involved. This will lead to fundamental suppression of far-IR emissions by these dipoles.
For this effect to occur the mirror 23 must be within the appropriate coherence length for the emission so that destructive interference can occur. With reference to the desired emission wavelengths, 1-2 Nm, the upper window/mirror 23 is substantially transparent allowing these emissions to pass upwardly through window/mirror 23 of the tamp.
Overall, the upper window/mirror 23 will result in a decrease in the rate of emission of far-IR radiation from the upper surface is of the figment 10 and substantial reabsorption of what far-IR emissions remain. A corresponding increase in the fractional near-IA emission from the upper surface 15 will occur.
Because the vertical dimension (direction 20) of the filament 10 is substantially less than the other dimensions only a small fraction of the total emission will escape the side surfaces of the filament.
- Emissions from the sides 26 of the filament 10 will to some degree be reflected by the cavity mirrors 21, 23, and reabsorbed by the filament 10. A corresponding increase in the fractional emission from the upper surface 15 will occur.
Overall, the proper placement of the lower and upper mirrors 21, 23, will result in a relative increase in the fractional emission of near-IR
light from the upper surface 15 of the filament 10.
Once the upper window/mirror 23 is formed, the sacrificial layers of PSG are removed by etching with nitric acid. Following the nitric acid etch, the lamp is placed into a vacuum system and evacuated or a controlled atmosphere including one or more gases is introduced. The etch channels 7, are sealed with an appropriate material 5, such as the protective material used earlier. Finally, metal pads 11 are grown to allow electrical connection to the filament (Fig.
2b).
The use of a vacuum limits heat conduction to the walls of the cavity 12. However, the lamp 30 can be attached to a heat sink (not shown) to cool the walls, if required.
In other embodiments the substrate 1 may consist of another opaque substrate material possibly a metal or a transparent material such as alumina, sapphire, quartz or glass.
Materials to be used as mirrors or windows 21, 23, can consist of metals, transparent dielectrics, or materials such as indium-tin oxide which are substantially reflective at some wavelengths and substantially transparent at other wavelengths. 1n addition multilayer stacks consisting of metals, materials such as ITO, and dielectrics in 3 0 combination may be used. These layers can be reflective at all WO 98/43281 PCT/i1S98/05977 wavelengths concerned forming a mirror or may be transparent at some or all wavelengths forming an output window. Combination mirror/windows which consist of reflective material with holes of an appropriate size to allow shorter wavelengths to pass can also be used. Appropriate layers to protect these mirrors and windows from later etching stages can be formed as required.
In other embodiments the distance between mirrors 21, 23, and the filament 10 may be selected to suppress undesired wavelengths other than the far-1R. However, difficulties with surface plasmon production and direct energy transfer to these mirrors can occur in certain cases (see E.A. Hinds identified abovel. Distances less than a quarter of a wavelength and generally less than a tenth of a wavelength can cause such conductive energy transfer to the mirrors with a loss of radiated energy from the lamp 30. In these cases, the materials and distances involved along with the shapes of the surfaces are adjusted accordingly.
In other embodiments the distance between one or both of the mirrors 21, 23, and the filament 10 may be selected to enhance desired emissions through constructive interference. By way of 2 0 example, the embodiment can have one or more spaced upper window/mirror and one or more lower window/mirrors. These mirrors can be positioned relative to the filament in order to enhance and/or suppress certain emissions. Placement of mirrors such that antipodes of the electric field are produced at the surface of the filament can enhance emission while placement of mirrors such that nodes of the electric field are produced at the surface of the filament can suppress emissions.
In other embodiments the output window/mirror 23 can be selected to pass wavelengths other than the near-IR. Windows can be formed which allow emission from any single or multiple direction.
Windows can be formed which exhibit birefringence resulting in a partially or substantially polarized output. Windows can be formed which allow the emission of different polarizations andlor wavelengths - into different directions.
In still other embodiments the filament 10 may consist of a high temperature refractory material. High temperature refractory materials suitable for incandescent lamps 30 are well known in the literature.
Tables of suitable materials are presented in The Chemistry of Artificial Lighting Devices, R.C. Ropp (Elsevier, Amsterdam, 7993), which is incorporated herein by reference. Appropriate layers to protect the filament from later etching stages may be formed it required. Sacrificial layers of materials other than PSG may be formed for use with etchants other than nitric acid.
In other embodiments, an electrically heated Better material can be added to the cavity to aid in maintenance of the vacuum once the cavity is sealed. The use of Betters is well known in vacuum science.
In other embodiments the output window may consist merely of an open upper surface with the filament operated in air or other ambient media.
From the above, it is evident that incandescent light sources can be formed that are more efficient than those currently existing and that are specifically designed for particular needs.
Other features, aspects and objects of the invention can be obtained from a review of the figures and the claims.
It is to be understood that other embodiments of the invention can be developed and fall within the spirit and scope of the invention and claims.
Claims (32)
1. A device comprising: a cavity with an incandescent active region;
said incandescent active region capable of having spontaneous light emission when heated; and said device capable of controlling the spontaneous light emissions from said active region.
said incandescent active region capable of having spontaneous light emission when heated; and said device capable of controlling the spontaneous light emissions from said active region.
2. The device of claim 1, wherein the control of spontaneous emission is achieved by decreasing the rate of certain emissions.
3. The device of claim 1, wherein the control of spontaneous emission is achieved by increasing the rate of certain emissions.
4. The device of claim 1, wherein the control of spontaneous emission is achieved by causing the reabsorption of certain emissions.
5. The device of claim 1 including:
at least one mirror that is capable of controlling the spontaneous light emission from said active region.
at least one mirror that is capable of controlling the spontaneous light emission from said active region.
6. The device of claim 1 including:
said cavity being defined by a lower mirror and an upper window/mirror; and wherein said lower mirror reflects light back into said cavity, and said upper window/mirror reflects some light back into said cavity and allows some light to pass outwardly of said cavity.
said cavity being defined by a lower mirror and an upper window/mirror; and wherein said lower mirror reflects light back into said cavity, and said upper window/mirror reflects some light back into said cavity and allows some light to pass outwardly of said cavity.
7. The device of claim 1 including:
said incandescent active region includes an incandescent filament.
said incandescent active region includes an incandescent filament.
8. The device of claim 7 wherein:
said filament includes a polysilicon filament.
said filament includes a polysilicon filament.
9. The device of claim 7 wherein:
said filament is selected from the group consisting of tungsten, tantalum, platinum, palladium, molybdenum, zirconium, titanium, nickel, and chromium or a carbide, nitride, boride, silicide, or oxide of these metals.
said filament is selected from the group consisting of tungsten, tantalum, platinum, palladium, molybdenum, zirconium, titanium, nickel, and chromium or a carbide, nitride, boride, silicide, or oxide of these metals.
10. A device comprising:
a resonant microcavity with an incandescent active region; and said active region having a source of incandescent light.
a resonant microcavity with an incandescent active region; and said active region having a source of incandescent light.
11. The device of claim 10 wherein:
said microcavity can accomplish at least one of (1) increasing the rate of light emissions; (2) decrease the rate of light emissions; and (3) cause the reabsorption of certain tight emissions from the incandescent lightsource in the active region.
said microcavity can accomplish at least one of (1) increasing the rate of light emissions; (2) decrease the rate of light emissions; and (3) cause the reabsorption of certain tight emissions from the incandescent lightsource in the active region.
12. The device of claim 10 wherein:
said resonant microcavity has at least one mirror that is capable of controlling the spontaneous light emission from said active region.
said resonant microcavity has at least one mirror that is capable of controlling the spontaneous light emission from said active region.
13. The device of claim 10 wherein:
said microcavity being defined by a lower mirror and an upper window/mirror; and -16-~
wherein said lower mirror reflects light back into said microcavity, and said upper window/mirror reflects some fight back into said microcavity and allows some light to pass outwardly of said microcavity.
said microcavity being defined by a lower mirror and an upper window/mirror; and -16-~
wherein said lower mirror reflects light back into said microcavity, and said upper window/mirror reflects some fight back into said microcavity and allows some light to pass outwardly of said microcavity.
14. The device of claim 10 wherein:
said incandescent lightsource can emit wavelengths in at least one of the infrared range, the visible range, and the ultraviolet range.
said incandescent lightsource can emit wavelengths in at least one of the infrared range, the visible range, and the ultraviolet range.
15. The device of claim 1 wherein:
the incandescent active region is capable of emitting wavelengths in at least one of an infrared range, a visible range, and an ultraviolet range.
the incandescent active region is capable of emitting wavelengths in at least one of an infrared range, a visible range, and an ultraviolet range.
16. The device of claim 10 wherein:
said microcavity can improve the efficiency of incandescent light emission through at least one of enhancement, suppression, and reabsorption of energy from the microcavity.
said microcavity can improve the efficiency of incandescent light emission through at least one of enhancement, suppression, and reabsorption of energy from the microcavity.
17. The device of claim 10 wherein:
said microcavity is an optical microcavity.
said microcavity is an optical microcavity.
18. The device of claim 10 wherein:
said incandescent active region includes an incandescent filament.
said incandescent active region includes an incandescent filament.
19. The device of claim 18 wherein:
said filament can be at least one of (1) suspended in said microcavity, and (2) form a boundary of said microcavity.
said filament can be at least one of (1) suspended in said microcavity, and (2) form a boundary of said microcavity.
20. The device of claim 10 wherein:
said source of incandescent light is generated by an electrically heated filament.
said source of incandescent light is generated by an electrically heated filament.
21. The device of claim 10 wherein:
said microcavity includes a mirror which is positioned such that at least one of a node and an antinode of a standing wave are produced relative to the incandescent active region.
said microcavity includes a mirror which is positioned such that at least one of a node and an antinode of a standing wave are produced relative to the incandescent active region.
22. A method of enhancing the output of a incandescent lightsource comprising the steps of:
providing an incandescent lightsource capable of having spontaneous light emission; and controlling the spontaneous light emission from said incandescent lightsource.
providing an incandescent lightsource capable of having spontaneous light emission; and controlling the spontaneous light emission from said incandescent lightsource.
23. The method of claim 22 including the step of:
providing said incandescent lightsource in a resonant microcavity.
providing said incandescent lightsource in a resonant microcavity.
24. The method of claim 22 wherein said controlling step includes:
controlling the spontaneous light emission by at least one of (1) decreasing the rate of certain emissions, (2) increasing the rate of certain emissions, and (3) causing the reabsorption of certain emissions.
controlling the spontaneous light emission by at least one of (1) decreasing the rate of certain emissions, (2) increasing the rate of certain emissions, and (3) causing the reabsorption of certain emissions.
25. The device of claim 10 wherein:
said microcavity is on of (1) evacuated or (2) filled with one or more gasses to create a controlled atmosphere.
said microcavity is on of (1) evacuated or (2) filled with one or more gasses to create a controlled atmosphere.
26. The device of claim 1, wherein the control of spontaneous emission is achieved by controlling the direction of such emissions.
27. The device of claim 1, wherein the control of spontaneous emission is achieved by controlling the wavelength of such emissions.
28. The device of claim 1, wherein the control of spontaneous emission is achieved by controlling emission polarizations.
29. The device of claim 10 wherein:
said microcavity has a mirror which can pass some emissions from said incandescent active region and which can reflect some emissions from said incandescent active region.
said microcavity has a mirror which can pass some emissions from said incandescent active region and which can reflect some emissions from said incandescent active region.
30. The device of claim 10 wherein:
said microcavity includes a window which can pass emissions from said incandescent active region.
said microcavity includes a window which can pass emissions from said incandescent active region.
31. The device of claim 7 wherein:
said incandescent filament is comprised of a high temperature refractory material.
said incandescent filament is comprised of a high temperature refractory material.
32. The device of claim 1 wherein said cavity is a multi-dimensional cavity.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/827,189 | 1997-03-26 | ||
| US08/827,189 US5955839A (en) | 1997-03-26 | 1997-03-26 | Incandescent microcavity lightsource having filament spaced from reflector at node of wave emitted |
| PCT/US1998/005977 WO1998043281A1 (en) | 1997-03-26 | 1998-03-24 | Incandescent microcavity lightsource and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2284666A1 true CA2284666A1 (en) | 1998-10-01 |
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| CA002284666A Abandoned CA2284666A1 (en) | 1997-03-26 | 1998-03-24 | Incandescent microcavity lightsource and method |
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| EP (1) | EP0970508B1 (en) |
| JP (1) | JP2001519079A (en) |
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| CA (1) | CA2284666A1 (en) |
| DE (1) | DE69829278T2 (en) |
| WO (1) | WO1998043281A1 (en) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19843852A1 (en) * | 1998-09-24 | 2000-03-30 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Electrical incandescent lamp has light body(ies) in lamp vessel with flat, esp. strip-shaped, light body element(s) radiating in infrared and visible regions, infrared reflective filter(s) |
| US6845118B1 (en) * | 1999-01-25 | 2005-01-18 | Optical Communication Products, Inc. | Encapsulated optoelectronic devices with controlled properties |
| US6796866B2 (en) * | 1999-07-08 | 2004-09-28 | California Institute Of Technology | Silicon micromachined broad band light source |
| US6433303B1 (en) * | 2000-03-31 | 2002-08-13 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus using laser pulses to make an array of microcavity holes |
| US6843590B2 (en) * | 2000-05-17 | 2005-01-18 | Quantum Vision, Inc. | Waveguide based light source |
| ITTO20010341A1 (en) * | 2001-04-10 | 2002-10-10 | Fiat Ricerche | MICROFILAMENT MATRIX LIGHT SOURCE. |
| US7880117B2 (en) * | 2002-12-24 | 2011-02-01 | Panasonic Corporation | Method and apparatus of drilling high density submicron cavities using parallel laser beams |
| US20040182847A1 (en) * | 2003-02-17 | 2004-09-23 | Kazuaki Ohkubo | Radiation source for gas sensor |
| ITTO20030166A1 (en) * | 2003-03-06 | 2004-09-07 | Fiat Ricerche | HIGH EFFICIENCY EMITTER FOR INCANDESCENT LIGHT SOURCES. |
| US20040250589A1 (en) * | 2003-06-12 | 2004-12-16 | Daniel Hogan | Method and apparatus for forming discrete microcavities in a filament wire |
| US7040130B2 (en) * | 2003-10-14 | 2006-05-09 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for forming discrete microcavities in a filament wire using microparticles |
| US7204911B2 (en) * | 2004-03-19 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Process and apparatus for forming discrete microcavities in a filament wire using a polymer etching mask |
| NO321281B1 (en) | 2004-09-15 | 2006-04-18 | Sintef | Infrared source |
| DE102004046705A1 (en) * | 2004-09-24 | 2006-03-30 | Eads Deutschland Gmbh | Micromechanically produced infrared radiator |
| US20070228986A1 (en) * | 2006-03-31 | 2007-10-04 | General Electric Company | Light source incorporating a high temperature ceramic composite for selective emission |
| US7851985B2 (en) * | 2006-03-31 | 2010-12-14 | General Electric Company | Article incorporating a high temperature ceramic composite for selective emission |
| US7722421B2 (en) * | 2006-03-31 | 2010-05-25 | General Electric Company | High temperature ceramic composite for selective emission |
| US8044567B2 (en) | 2006-03-31 | 2011-10-25 | General Electric Company | Light source incorporating a high temperature ceramic composite and gas phase for selective emission |
| US7846391B2 (en) | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
| US20080116779A1 (en) * | 2006-11-20 | 2008-05-22 | The Aerospace Corporation | Micro-nanostructured films for high efficiency thermal light emitters |
| US7755292B1 (en) | 2007-01-22 | 2010-07-13 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultraminiature broadband light source and method of manufacturing same |
| US7709811B2 (en) | 2007-07-03 | 2010-05-04 | Conner Arlie R | Light emitting diode illumination system |
| US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
| JP5223298B2 (en) * | 2007-10-30 | 2013-06-26 | 横河電機株式会社 | Infrared light source |
| US20090160314A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Emissive structures and systems |
| US8242462B2 (en) | 2009-01-23 | 2012-08-14 | Lumencor, Inc. | Lighting design of high quality biomedical devices |
| US8138675B2 (en) * | 2009-02-27 | 2012-03-20 | General Electric Company | Stabilized emissive structures and methods of making |
| US8389957B2 (en) | 2011-01-14 | 2013-03-05 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| EP2787524B1 (en) | 2011-12-01 | 2016-09-14 | Stanley Electric Co., Ltd. | Light source device and filament |
| JP2013134875A (en) | 2011-12-26 | 2013-07-08 | Stanley Electric Co Ltd | Filament lamp and filament |
| US9642515B2 (en) | 2012-01-20 | 2017-05-09 | Lumencor, Inc. | Solid state continuous white light source |
| US9217561B2 (en) | 2012-06-15 | 2015-12-22 | Lumencor, Inc. | Solid state light source for photocuring |
| JP6371075B2 (en) * | 2014-02-21 | 2018-08-08 | スタンレー電気株式会社 | filament |
| JP2015176768A (en) * | 2014-03-14 | 2015-10-05 | スタンレー電気株式会社 | Filament, polarized radiation light source device, polarized infrared radiation heater and manufacturing method of filament |
| FR3047842B1 (en) * | 2016-02-12 | 2018-05-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ELECTRONIC COMPONENT WITH METALLIC RESISTANCE SUSPENDED IN A CLOSED CAVITY |
| US10680150B2 (en) * | 2017-08-15 | 2020-06-09 | Dragan Grubisik | Electrically conductive-semitransparent solid state infrared emitter apparatus and method of use thereof |
Family Cites Families (9)
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|---|---|---|---|---|
| DE3437397A1 (en) * | 1984-10-12 | 1986-04-17 | Drägerwerk AG, 2400 Lübeck | INFRARED RADIANT |
| US4724356A (en) * | 1986-10-10 | 1988-02-09 | Lockheed Missiles & Space Co., Inc. | Infrared display device |
| US5285131A (en) * | 1990-12-03 | 1994-02-08 | University Of California - Berkeley | Vacuum-sealed silicon incandescent light |
| US5493177A (en) * | 1990-12-03 | 1996-02-20 | The Regents Of The University Of California | Sealed micromachined vacuum and gas filled devices |
| NL9100327A (en) * | 1991-02-25 | 1992-09-16 | Philips Nv | CATHODE. |
| FI101911B (en) * | 1993-04-07 | 1998-09-15 | Valtion Teknillinen | Electrically modifiable thermal radiation source and method of manufacture thereof |
| US5469018A (en) * | 1993-07-20 | 1995-11-21 | University Of Georgia Research Foundation, Inc. | Resonant microcavity display |
| FI110727B (en) * | 1994-06-23 | 2003-03-14 | Vaisala Oyj | Electrically adjustable thermal radiation source |
| FI112005B (en) * | 1995-11-24 | 2003-10-15 | Valtion Teknillinen | Electrically modulated thermal radiation source |
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1997
- 1997-03-26 US US08/827,189 patent/US5955839A/en not_active Expired - Fee Related
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| AU6587098A (en) | 1998-10-20 |
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| EP0970508B1 (en) | 2005-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |