CA2302021A1 - Protective circuit - Google Patents
Protective circuit Download PDFInfo
- Publication number
- CA2302021A1 CA2302021A1 CA002302021A CA2302021A CA2302021A1 CA 2302021 A1 CA2302021 A1 CA 2302021A1 CA 002302021 A CA002302021 A CA 002302021A CA 2302021 A CA2302021 A CA 2302021A CA 2302021 A1 CA2302021 A1 CA 2302021A1
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- Canada
- Prior art keywords
- pad
- protective circuit
- transistor
- circuit according
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Abstract
The present invention relates to a protective circuit for protecting an integrated circuit against electrostatic discharge, so called ESD. The integrated circuit is connected to a supply voltage via a Vcc-pad (2) and an earth pad (3). The protective circuit, which is particularly intended to protect a positively supplied circuit for radio frequency applications against both negative and positive voltage pulses, comprises an input pad (14) and at least one PNP-transistor (20), the input pad being connnected to the integrated circuit, and the PNP-transistor being connected with its collector to the input pad, and its emitter connected either to the Vcc-pad or to the earth pad. The base of the PNP-transistor can be connected to its emitter either directly or via a resistor (24), or not be connected.
Description
Protective circuit Technical field The present invention relates to a protective circuit against electrostatic discharge, S so-called ESD. The protective circuit is intended to protect an integrated circuit, especially an integrated circuit for radio frequency applications against both nega-tive and positive voltage pulses.
Description of related art An often occurring problem with integrated circuits is the occurrence of electro-static discharges. Static charges can be built up to high levels and the subsequent discharge can cause great damage.
Today diodes are used to protect against such ESD-pulses. The disadvantage of I S these diodes is that the breakthrough voltage is relatively high. This means that in certain cases it is not possible to protect the circuit sufficiently effectively.
US A 5 568 346 reveals as previously known a protective circuit arranged to pro-tect an integrated circuit against ESD-pulses, and this particular circuit comprises diodes. Figure 1 shows an example of such a protective circuit. The integrated cir-cuit 1, which is fed with an applied voltage between a positive potential at a V«-pad 2 and an earth pad 3, can be protected against ESD-pulses 6, which can be generated due to static charges at the V~~-pad 2 or at the circuit input pad 4.
A positive ESD-pulse between the input pad 4 and the earth pad 3 will be short-circuited via the diode Sb by a main protector 7 to the earth pad. A negative ESD-pulse will be short-curcuited to the earth pad 3 when the amplitude of the pulse exceeds the forward voltage drop for the diode Sa.
WO. 99/12209 PCT/SE98I01377 If an ESD-pulse would occur between the V~~-pad and the input pad, the circuit is protected with the aid of the main protector. Said main protector can also consist of a reverse biased diode. Usually, however, more sophisticated transistor-based solu-tions are used.
The problem with the above described protective circuit is that it does not permit negative input signals to be applied to the input pad 4 since the signals, if the ampli-tude exceeds the forward voltage drop for the diode Sa, will be immediately de-coupled to the earth pad 3. Positive signals can, however, be applied to the input pad as long as the amplitude i~ less than the sum of the potential V~~ and the forward voltage drop for the diode Sb.
In order to also be able to handle negative voltage levels on the input pad, the diode Sa can be removed. A negative ESD-pulse will in this case generate a voltage which is so high that the diode Sb will break down. This breakdown voltage is of substan-tial size and the integrated circuit 1 can be destroyed even at relatively low voltage levels.
Summary of the inve"t;r", One purpose of the present invention is to provide a protective circuit which, in a flexible and effective manner, protects an integrated circuit against ESD-pulses, and in particular against negative ESD-pulses at an input pad belonging to the protective circuit and connected to the integrated circuit.
An additional purpose of the invention is that the input pad included in the protec-tive circuit is to have low resistive and capacitive losses and small coupling to the substrate.
W O' 99/12209 PCT/SE98/01377 These purposes and others are achieved with a protective circuit comprising at least one PNP-transistor with its collector connected to the input pad and its emitter con-nected to the V~~-pad of the integrated circuit or to its earth pad. The protective cir-cuit can also comprise a main protector connected between the V~~-pad and the earth pad so arranged that protection against ESD-pulses between them is obtained.
The base of the transistor can be connected to its emitter, either directly or via a resistor with a resistance. Alternatively it can be left floating, i.e. unconnected.
The PNP-transistor, which is preferably of lateral type with a predetermined distance between the collector and the emitter, can with advantage be integrated with the input pad on a common substrate doped to a first conductivity type.
The input pad can include a metal layer, preferably of octagonal shape, at least one underlying doped layer of a second conductivity type, a trench of insulating material which surrounds the underlying doped layer and a low resistive decoupling which surrounds the trench.
The low-resistive decoupling can comprise diffused substrate contacts and/or deep contacts with an electrically conducting material, such as tungsten or high-doped polysilicon, substrate contacts filled preferably by means of CVD-technology.
One advantage of the present invention is that the breakdown voltage of the ESD-protection can be adapted to a particular application by suitable selection of the resistance of the resistor and the distance between the collector and emitter of the PNP-transistor.
Additional advantages of the invention will be evident from the following descrip-tion.
WO 99!12209 PCT/SE98/01377 The invention will be described in more detail below with reference to the accom panying Figures 2-8, which are only shown to illustrate the invention and in no way limit the scope thereof.
Fig. 1 shows schematically a protective circuit according to the prior art.
Fig. 2 shows schematically a protective circuit according to a first preferred embodi-ment of the present invention.
Fig. 3 shows schematically a protective circuit according to an alternative embodi-ment of the present invention.
Fig. 4 shows schematically a protective circuit according to an additional alternative embodiment of the present invention.
Fig. 5 shows a cross-section of a lateral PNP-transistor which is used in the inven-tive protective circuit.
Fig. 6 shows a lateral PNP-transistor in a view from above.
Fig. 7 shows a cross-section of a lateral PNP-transistor and an input pad which is used in the inventive protective circuit.
Fig. 8 shows a lateral PNP-transistor, an input pad and a connection between them, in a view from above.
Fig. 2 shows a protective circuit according to the present invention. An integrated circuit 11 is supplied with a voltage via two conductors 12a,13a, which are inter-connected to an individual pad, preferably a V~~ pad 12 and an earth pad 13, the potential of the V~~-pad being positive relative to the potential of the earth pad. Bet-s ween these conductors, a main protector 17 can be connected, which consists of a reverse biased diode or of more complex transistor-based circuits. The integrated circuit is also connected to an input pad 14.
According to the invention, a PNP-transistor 20 is comprised in the protective cir-cuit, arranged in such a manner that its collector is connected to the input pad 14 and its emitter to the earth pad 13. The base of the PNP-transistor is connected via a transistor 24 to said earth pad.
The PNP-transistor is intended to constitute a protector against an ESD-pulse 16 at the input pad which is negative relative to the earth pad.
The transistor function itself is concentrated to the region between the emitter and the collector. Leakage currents will occur when the voltage increases between the emitter and the collector. The voltage at the base will then increase, which eventu-ally results in the PNP-transistor beginning to conduct. When the PNP-transistor has finally begun to conduct current, the voltage will drop rapidly between the emitter and the collector, and the current to the base will be supplied by the high current arising between the emitter and the collector.
The voltage at which the PNP-transistor begins to conduct current depends i.a.
on the resistance of the resistor. A properly selected resistance can provide the desired level of protection. If the resistor has a variable resistance, the protective level can be adapted to the application in question.
W0~99112209 PCTISE98101377 A diode 1 Sb can also be included in the protective circuit. This diode is connected with its cathode to the V~~-pad and its anode to the input pad. Alternatively, the diode can be realized by an NPN-transistor which is connected with its collector to the higher potential and its base and emitter to the input pad or by a PNP-transistor which is connected with its base to the higher potential and its collector and emitter to the input pad (not shown in Fig. 2).
An additional diode can be included in the protective circuit and be connected with its cathode to the earth pad and its anode to the input pad (not shown in Fig.
2). This diode can be present at the-same time as the diode 15b or constitute an alternative thereto.
Fig. 3 shows an alternative similar embodiment of the protective circuit according to the invention. The only difference in this case is that the PNP-transistor 20 is in this case arranged in such a manner that both its emitter and its base {via the resistor 24) are connected to the higher potential V~~ instead of to the earth pad.
In an additional embodiment of the present invention there are two transistors 20,21 connected with their collectors to the input pad 14 and their emitters to the V~~-pad 12 and the earth pad 13, respectively, as can be seen in Fig. 4. This provides protec-tion from ESD-pulses both between the input pad and the earth pad and between the input pad and the V~~ pad without having to utilize the main protection.
One or both of the diodes described in connection with the first embodiment can be used in these two alternative embodiments (one diode I Sb is shown in Fig. 3 and none in Fig. 4).
In all of the embodiments the base of the PNP-transistor can be left floating, i.e.
unconnected, or be directly connected to the earth pad /V~~-pad without using WO '99112209 PCTISE98/01377 a resistor (not shown in the Figures).
If the base is Ieft floating, the breakdown BV~~o of the transistor is used as the pro-tective level. This level is defined by the distance between the collector and the emitter and the doping of the base.
If the resistor 24 is short-circuited, the emitter and the base of the PNP-transistor will be coupled together and the breakdown voltage will be termed BV~es.
The PNP-transistor is preferably of lateral type and will be described here briefly with reference to Figures 5 and 6.
In or on a semiconductor substrate 25 of P-type there lies within a predetermined area a bottom diffusion layer 27 of N+-type. On top of this bottom diffusion layer there lies an N-doped epi-layer 29, which is surrounded by an N+-doped base con-tact 31. Over the epi-layer there is grown field oxide 33 within predetermined areas, whereafter P-doped emitter~35 and collector areas 37 are achieved. On top of this there is a passivation layer 39 in which contact holes 41,43,45 are made to estab-lish communication between the active areas and the upper metallic conducting layers 51,53,55.
Fig. 6 shows the lateral PNP-transistor 20 as seen from above. It shows the lateral extent of the metallic connecting layers 51,53,55 which connect to the base, the collector and the emitter, respectively. The contact holes 41,43,45 are also shown in the Figure. Note however that the contact holes 43 of the collector are shown at a different location in Fig. 6 than in Fig. 5.
Fig. 7 shows a cross-section of the input pad 14 and the PNP-transistor 20 according to the invention. The input pad is provided with an upper metal layer 61 and an g underlying structure comprising, among other things, an N+-diffusion layer 63 for reduction of the resistive losses which give rise to noise and thus degrade the per-formance of the protection in radio applications.
The underlying structure further comprises an N-doped epi-layer 65, field oxide 67, an insulating layer 69, N+-doped contacts 71 and deep trenches 73.
The signals arising between the metal layer 61 and the underiying structure can be decoupled via the N+-doped contacts 71 so that the signals will not come down into the substrate 74 where they could disturb the surroundings by e.g. cross-talk.
The trenches 73, which are filled with an insuiating material and surround the rest of the underlying structure, further limit the above-mentioned couplings. The trenches prevent the coupling in the upper adjacent surface layers from occurring with the 1 S same strength. Note that the metal layer must lie within the area defined by the tren-ches.
The portion of the signal which still reaches down to the substrate is decoupled with substrate contacts 75 which can consist of a series of dopings of the same type as the substrate or of holes or grooves filled with a low-resistive filling, e.g.
high-doped polysilicon or tungsten, which has been deposited using CVD-technology (see e.g.
Swedish Patent Applications 9601 I 19-2 and 9601444-4).
The lateral PNP-transistor, which is identical to the transistor shown in Figures 5 and 6, is also surrounded by deep trenches 77. The collector 37 of the transistor and its resistor (not shown in Fig. 7) are connected to the metal layer 61 of the input pad as close thereto as possible. Note that Fig. 7 is schematic and does not show a num-ber of layers included in the semiconductor structure. For example, there is not shown the electrical connection between the input pad and the lateral transistor.
WO 99111209 PCT/SE98/Ot377 Preferably, the connecting layer of the transistor is localized to the first (lowermost) metal layer of the structure while the metal layer of the input pad is localized to the last (topmost) metal layer of the structure.
fiig. 8 shows a preferred layout for the metal layer 61 of the input pad, the lateral PNP-transistor 20, and a connection 79 between them, as seen from above. Note that the input pad is not square but has been made octagonal to minimize the capa-chive losses, The protective circuit according to the invention is particularly suitable for protec-ting integrated circuits intended for radio and other high-frequency applications, An advantage of the protective circuit according to the invention is that the break-down voltage for the PNP-transistor 20 can be programmed within certain limits with~the aid of the resistor and the distance between the collector and the emitter of the PNp-transistor.
The invention is, of course, not limited to the embodiments described above and shown in the drawings. Rather, it can be modified within the scope of the accom-panying patent claims. The invention is obviously not limited fl~ regards layout, dimensions or geometries of the input pad, the PNP-transistor or the protective circuit.
Description of related art An often occurring problem with integrated circuits is the occurrence of electro-static discharges. Static charges can be built up to high levels and the subsequent discharge can cause great damage.
Today diodes are used to protect against such ESD-pulses. The disadvantage of I S these diodes is that the breakthrough voltage is relatively high. This means that in certain cases it is not possible to protect the circuit sufficiently effectively.
US A 5 568 346 reveals as previously known a protective circuit arranged to pro-tect an integrated circuit against ESD-pulses, and this particular circuit comprises diodes. Figure 1 shows an example of such a protective circuit. The integrated cir-cuit 1, which is fed with an applied voltage between a positive potential at a V«-pad 2 and an earth pad 3, can be protected against ESD-pulses 6, which can be generated due to static charges at the V~~-pad 2 or at the circuit input pad 4.
A positive ESD-pulse between the input pad 4 and the earth pad 3 will be short-circuited via the diode Sb by a main protector 7 to the earth pad. A negative ESD-pulse will be short-curcuited to the earth pad 3 when the amplitude of the pulse exceeds the forward voltage drop for the diode Sa.
WO. 99/12209 PCT/SE98I01377 If an ESD-pulse would occur between the V~~-pad and the input pad, the circuit is protected with the aid of the main protector. Said main protector can also consist of a reverse biased diode. Usually, however, more sophisticated transistor-based solu-tions are used.
The problem with the above described protective circuit is that it does not permit negative input signals to be applied to the input pad 4 since the signals, if the ampli-tude exceeds the forward voltage drop for the diode Sa, will be immediately de-coupled to the earth pad 3. Positive signals can, however, be applied to the input pad as long as the amplitude i~ less than the sum of the potential V~~ and the forward voltage drop for the diode Sb.
In order to also be able to handle negative voltage levels on the input pad, the diode Sa can be removed. A negative ESD-pulse will in this case generate a voltage which is so high that the diode Sb will break down. This breakdown voltage is of substan-tial size and the integrated circuit 1 can be destroyed even at relatively low voltage levels.
Summary of the inve"t;r", One purpose of the present invention is to provide a protective circuit which, in a flexible and effective manner, protects an integrated circuit against ESD-pulses, and in particular against negative ESD-pulses at an input pad belonging to the protective circuit and connected to the integrated circuit.
An additional purpose of the invention is that the input pad included in the protec-tive circuit is to have low resistive and capacitive losses and small coupling to the substrate.
W O' 99/12209 PCT/SE98/01377 These purposes and others are achieved with a protective circuit comprising at least one PNP-transistor with its collector connected to the input pad and its emitter con-nected to the V~~-pad of the integrated circuit or to its earth pad. The protective cir-cuit can also comprise a main protector connected between the V~~-pad and the earth pad so arranged that protection against ESD-pulses between them is obtained.
The base of the transistor can be connected to its emitter, either directly or via a resistor with a resistance. Alternatively it can be left floating, i.e. unconnected.
The PNP-transistor, which is preferably of lateral type with a predetermined distance between the collector and the emitter, can with advantage be integrated with the input pad on a common substrate doped to a first conductivity type.
The input pad can include a metal layer, preferably of octagonal shape, at least one underlying doped layer of a second conductivity type, a trench of insulating material which surrounds the underlying doped layer and a low resistive decoupling which surrounds the trench.
The low-resistive decoupling can comprise diffused substrate contacts and/or deep contacts with an electrically conducting material, such as tungsten or high-doped polysilicon, substrate contacts filled preferably by means of CVD-technology.
One advantage of the present invention is that the breakdown voltage of the ESD-protection can be adapted to a particular application by suitable selection of the resistance of the resistor and the distance between the collector and emitter of the PNP-transistor.
Additional advantages of the invention will be evident from the following descrip-tion.
WO 99!12209 PCT/SE98/01377 The invention will be described in more detail below with reference to the accom panying Figures 2-8, which are only shown to illustrate the invention and in no way limit the scope thereof.
Fig. 1 shows schematically a protective circuit according to the prior art.
Fig. 2 shows schematically a protective circuit according to a first preferred embodi-ment of the present invention.
Fig. 3 shows schematically a protective circuit according to an alternative embodi-ment of the present invention.
Fig. 4 shows schematically a protective circuit according to an additional alternative embodiment of the present invention.
Fig. 5 shows a cross-section of a lateral PNP-transistor which is used in the inven-tive protective circuit.
Fig. 6 shows a lateral PNP-transistor in a view from above.
Fig. 7 shows a cross-section of a lateral PNP-transistor and an input pad which is used in the inventive protective circuit.
Fig. 8 shows a lateral PNP-transistor, an input pad and a connection between them, in a view from above.
Fig. 2 shows a protective circuit according to the present invention. An integrated circuit 11 is supplied with a voltage via two conductors 12a,13a, which are inter-connected to an individual pad, preferably a V~~ pad 12 and an earth pad 13, the potential of the V~~-pad being positive relative to the potential of the earth pad. Bet-s ween these conductors, a main protector 17 can be connected, which consists of a reverse biased diode or of more complex transistor-based circuits. The integrated circuit is also connected to an input pad 14.
According to the invention, a PNP-transistor 20 is comprised in the protective cir-cuit, arranged in such a manner that its collector is connected to the input pad 14 and its emitter to the earth pad 13. The base of the PNP-transistor is connected via a transistor 24 to said earth pad.
The PNP-transistor is intended to constitute a protector against an ESD-pulse 16 at the input pad which is negative relative to the earth pad.
The transistor function itself is concentrated to the region between the emitter and the collector. Leakage currents will occur when the voltage increases between the emitter and the collector. The voltage at the base will then increase, which eventu-ally results in the PNP-transistor beginning to conduct. When the PNP-transistor has finally begun to conduct current, the voltage will drop rapidly between the emitter and the collector, and the current to the base will be supplied by the high current arising between the emitter and the collector.
The voltage at which the PNP-transistor begins to conduct current depends i.a.
on the resistance of the resistor. A properly selected resistance can provide the desired level of protection. If the resistor has a variable resistance, the protective level can be adapted to the application in question.
W0~99112209 PCTISE98101377 A diode 1 Sb can also be included in the protective circuit. This diode is connected with its cathode to the V~~-pad and its anode to the input pad. Alternatively, the diode can be realized by an NPN-transistor which is connected with its collector to the higher potential and its base and emitter to the input pad or by a PNP-transistor which is connected with its base to the higher potential and its collector and emitter to the input pad (not shown in Fig. 2).
An additional diode can be included in the protective circuit and be connected with its cathode to the earth pad and its anode to the input pad (not shown in Fig.
2). This diode can be present at the-same time as the diode 15b or constitute an alternative thereto.
Fig. 3 shows an alternative similar embodiment of the protective circuit according to the invention. The only difference in this case is that the PNP-transistor 20 is in this case arranged in such a manner that both its emitter and its base {via the resistor 24) are connected to the higher potential V~~ instead of to the earth pad.
In an additional embodiment of the present invention there are two transistors 20,21 connected with their collectors to the input pad 14 and their emitters to the V~~-pad 12 and the earth pad 13, respectively, as can be seen in Fig. 4. This provides protec-tion from ESD-pulses both between the input pad and the earth pad and between the input pad and the V~~ pad without having to utilize the main protection.
One or both of the diodes described in connection with the first embodiment can be used in these two alternative embodiments (one diode I Sb is shown in Fig. 3 and none in Fig. 4).
In all of the embodiments the base of the PNP-transistor can be left floating, i.e.
unconnected, or be directly connected to the earth pad /V~~-pad without using WO '99112209 PCTISE98/01377 a resistor (not shown in the Figures).
If the base is Ieft floating, the breakdown BV~~o of the transistor is used as the pro-tective level. This level is defined by the distance between the collector and the emitter and the doping of the base.
If the resistor 24 is short-circuited, the emitter and the base of the PNP-transistor will be coupled together and the breakdown voltage will be termed BV~es.
The PNP-transistor is preferably of lateral type and will be described here briefly with reference to Figures 5 and 6.
In or on a semiconductor substrate 25 of P-type there lies within a predetermined area a bottom diffusion layer 27 of N+-type. On top of this bottom diffusion layer there lies an N-doped epi-layer 29, which is surrounded by an N+-doped base con-tact 31. Over the epi-layer there is grown field oxide 33 within predetermined areas, whereafter P-doped emitter~35 and collector areas 37 are achieved. On top of this there is a passivation layer 39 in which contact holes 41,43,45 are made to estab-lish communication between the active areas and the upper metallic conducting layers 51,53,55.
Fig. 6 shows the lateral PNP-transistor 20 as seen from above. It shows the lateral extent of the metallic connecting layers 51,53,55 which connect to the base, the collector and the emitter, respectively. The contact holes 41,43,45 are also shown in the Figure. Note however that the contact holes 43 of the collector are shown at a different location in Fig. 6 than in Fig. 5.
Fig. 7 shows a cross-section of the input pad 14 and the PNP-transistor 20 according to the invention. The input pad is provided with an upper metal layer 61 and an g underlying structure comprising, among other things, an N+-diffusion layer 63 for reduction of the resistive losses which give rise to noise and thus degrade the per-formance of the protection in radio applications.
The underlying structure further comprises an N-doped epi-layer 65, field oxide 67, an insulating layer 69, N+-doped contacts 71 and deep trenches 73.
The signals arising between the metal layer 61 and the underiying structure can be decoupled via the N+-doped contacts 71 so that the signals will not come down into the substrate 74 where they could disturb the surroundings by e.g. cross-talk.
The trenches 73, which are filled with an insuiating material and surround the rest of the underlying structure, further limit the above-mentioned couplings. The trenches prevent the coupling in the upper adjacent surface layers from occurring with the 1 S same strength. Note that the metal layer must lie within the area defined by the tren-ches.
The portion of the signal which still reaches down to the substrate is decoupled with substrate contacts 75 which can consist of a series of dopings of the same type as the substrate or of holes or grooves filled with a low-resistive filling, e.g.
high-doped polysilicon or tungsten, which has been deposited using CVD-technology (see e.g.
Swedish Patent Applications 9601 I 19-2 and 9601444-4).
The lateral PNP-transistor, which is identical to the transistor shown in Figures 5 and 6, is also surrounded by deep trenches 77. The collector 37 of the transistor and its resistor (not shown in Fig. 7) are connected to the metal layer 61 of the input pad as close thereto as possible. Note that Fig. 7 is schematic and does not show a num-ber of layers included in the semiconductor structure. For example, there is not shown the electrical connection between the input pad and the lateral transistor.
WO 99111209 PCT/SE98/Ot377 Preferably, the connecting layer of the transistor is localized to the first (lowermost) metal layer of the structure while the metal layer of the input pad is localized to the last (topmost) metal layer of the structure.
fiig. 8 shows a preferred layout for the metal layer 61 of the input pad, the lateral PNP-transistor 20, and a connection 79 between them, as seen from above. Note that the input pad is not square but has been made octagonal to minimize the capa-chive losses, The protective circuit according to the invention is particularly suitable for protec-ting integrated circuits intended for radio and other high-frequency applications, An advantage of the protective circuit according to the invention is that the break-down voltage for the PNP-transistor 20 can be programmed within certain limits with~the aid of the resistor and the distance between the collector and the emitter of the PNp-transistor.
The invention is, of course, not limited to the embodiments described above and shown in the drawings. Rather, it can be modified within the scope of the accom-panying patent claims. The invention is obviously not limited fl~ regards layout, dimensions or geometries of the input pad, the PNP-transistor or the protective circuit.
Claims (14)
1. Protective circuit for protecting an integrated circuit (12) against electrostatic discharge, so-called ESD, said integrated circuit (21) being connected to a supply voltage via a Vcc-pad (12) and an earth pad (13), where the protective circuit comprises an input pad (14), and at least one PNP-transistor (20), wherein the input pad (14) being connected to the integrated circuit (I1) and the PNP-transistor (20) being connected with its collector to the input pad (14) and its emitter to either the Vcc-pad (12) or the earth pad (13), characterized in that the base of the PNP-transistor (20) is unconnected.
2. Protective circuit according to Claim 1, characterized in that it comprises a main protector (17) connected between the Vcc-pad and the earth pad and disposed to protect against ESD-pulses therebetween.
3. Protective circuit according to Claim 2, characterized in that the emitter of the PNP-transistor is connected to the Vcc-pad and in that it further comprises a second PNP-transistor with its collector connected to the input pad and its emitter connected to the earth pad.
4. Protective circuit according to any of Claims 1-3, characterized in that it comprises at least a first diode (15b) with its anode connected to the input pad and its cathode connected to the Vcc-pad.
5. Protective circuit according to any of Claims 1-4, characterized in that it comprises at least a second diode with its anode connectd to the input pad and its cathode connected to the earth pad.
6. Protective circuit according to any of Claims 1-5, characterized in that the PNP-transistor is of lateral type with a predetermined distance between the collector and the emitter.
7. Protective circuit according to any of Claims 1-6, characterized in that the PNP-transistor and the input pad are made integrated on a common substrate (25) doped to a first conductivity type.
8. Protective circuit according to any of Claims 1-7, characterized in that the input pad comprises a metal layer (61). at least one underlying doped layer (63, 65) of a second conductivity type, and a contact (71) of said second conductivity type connected to the doped layer.
9. Protective circuit according to Claim 8, characterized in that the metal layer of the input pad is ortagonal in shape.
10. Protective circuit according to Claim 8 or 9, characterized in that the input pad comprises a trench (73) of insulating material which surrounds the underlying doped layer.
11. Protective circuit according to Claim 10, characterized in that the input pad comprises a low-resistive decoupling (75) which surrounds the trench.
12. Protective circuit according to Claim 11, characterized in that the low-resistive decoupling comprises diffused substrate contacts.
13. Protective circuit according to Claim 11 or 12, characterized in that the low-resistive decoupling comprises deep substrate contacts filled with an electrically conducting material, in particular tungsten or high-doped polysilicon.
14. Protective circuit according to Claim 13, characterised in that the substrate contacts are tilled by means of CVD-technology.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9703160A SE512494C2 (en) | 1997-09-02 | 1997-09-02 | Protection circuit |
| SE9703160-3 | 1997-09-02 | ||
| PCT/SE1998/001377 WO1999012209A1 (en) | 1997-09-02 | 1998-07-13 | Protective circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2302021A1 true CA2302021A1 (en) | 1999-03-11 |
Family
ID=20408113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002302021A Abandoned CA2302021A1 (en) | 1997-09-02 | 1998-07-13 | Protective circuit |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6163446A (en) |
| EP (1) | EP1019963B1 (en) |
| JP (1) | JP2001515277A (en) |
| KR (1) | KR100533573B1 (en) |
| CN (1) | CN1179416C (en) |
| AU (1) | AU8369098A (en) |
| CA (1) | CA2302021A1 (en) |
| DE (1) | DE69839704D1 (en) |
| SE (1) | SE512494C2 (en) |
| TW (1) | TW375824B (en) |
| WO (1) | WO1999012209A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734504B1 (en) * | 2002-04-05 | 2004-05-11 | Cypress Semiconductor Corp. | Method of providing HBM protection with a decoupled HBM structure |
| CN101095232B (en) * | 2003-07-16 | 2010-12-08 | Nxp股份有限公司 | Input stage resistant against negative voltage swings |
| US7538409B2 (en) * | 2006-06-07 | 2009-05-26 | International Business Machines Corporation | Semiconductor devices |
| CN103730466A (en) * | 2013-12-06 | 2014-04-16 | 李思敏 | GAT with integrated resistor and grooved-gate polycrystalline silicon structure |
| CN111492580A (en) * | 2018-04-20 | 2020-08-04 | 华为技术有限公司 | Overvoltage protection circuit of MOS (metal oxide semiconductor) tube in wireless receiving circuit |
| KR20220010947A (en) * | 2020-07-20 | 2022-01-27 | 에스케이하이닉스 주식회사 | Image sensing device having protection device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
| JPS59181560A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Electrostatic breakdown preventive circuit |
| GB2211986B (en) * | 1987-09-25 | 1990-11-21 | Plessey Co Plc | An improved semi-conductive device |
| US4870530A (en) * | 1988-06-27 | 1989-09-26 | Advanced Micro Devices, Inc. | Electrostatic discharge protection circuitry for any two external pins of an I.C. package |
| US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
| JPH02280621A (en) * | 1989-03-16 | 1990-11-16 | Siemens Ag | Transistor circuit |
| GB2243485A (en) * | 1990-04-27 | 1991-10-30 | Motorola Gmbh | Semiconductor device contact pads |
| DE69029271T2 (en) * | 1990-12-21 | 1997-04-17 | Sgs Thomson Microelectronics | Protective device against electrostatic discharge for an IC connection and its integrated structure |
| US5272586A (en) * | 1991-01-29 | 1993-12-21 | National Semiconductor Corporation | Technique for improving ESD immunity |
| US5272371A (en) * | 1991-11-19 | 1993-12-21 | Sgs-Thomson Microelectronics, Inc. | Electrostatic discharge protection structure |
| US5514893A (en) * | 1992-01-05 | 1996-05-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device for protecting an internal circuit from electrostatic damage |
| US5400202A (en) * | 1992-06-15 | 1995-03-21 | Hewlett-Packard Company | Electrostatic discharge protection circuit for integrated circuits |
| US5276582A (en) * | 1992-08-12 | 1994-01-04 | National Semiconductor Corporation | ESD protection using npn bipolar transistor |
| JP2965840B2 (en) * | 1993-12-02 | 1999-10-18 | 株式会社東芝 | Transistor circuit |
| KR100402672B1 (en) * | 1995-10-31 | 2004-06-04 | 텍사스 인스트루먼츠 인코포레이티드 | Integrated lateral structure for esd protection in cmos/bicmos technologies |
| US5670814A (en) * | 1996-06-03 | 1997-09-23 | Winbond Electronics Corporation | Electrostatic discharge protection circuit triggered by well-coupling |
-
1997
- 1997-09-02 SE SE9703160A patent/SE512494C2/en not_active IP Right Cessation
- 1997-10-16 TW TW086115249A patent/TW375824B/en active
-
1998
- 1998-07-13 EP EP98934091A patent/EP1019963B1/en not_active Expired - Lifetime
- 1998-07-13 CA CA002302021A patent/CA2302021A1/en not_active Abandoned
- 1998-07-13 CN CNB988087812A patent/CN1179416C/en not_active Expired - Fee Related
- 1998-07-13 AU AU83690/98A patent/AU8369098A/en not_active Abandoned
- 1998-07-13 KR KR10-2000-7002233A patent/KR100533573B1/en not_active IP Right Cessation
- 1998-07-13 WO PCT/SE1998/001377 patent/WO1999012209A1/en active IP Right Grant
- 1998-07-13 DE DE69839704T patent/DE69839704D1/en not_active Expired - Lifetime
- 1998-07-13 JP JP2000509118A patent/JP2001515277A/en not_active Withdrawn
- 1998-08-28 US US09/141,598 patent/US6163446A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999012209A1 (en) | 1999-03-11 |
| AU8369098A (en) | 1999-03-22 |
| JP2001515277A (en) | 2001-09-18 |
| SE512494C2 (en) | 2000-03-27 |
| KR100533573B1 (en) | 2005-12-05 |
| CN1179416C (en) | 2004-12-08 |
| US6163446A (en) | 2000-12-19 |
| CN1269911A (en) | 2000-10-11 |
| DE69839704D1 (en) | 2008-08-21 |
| EP1019963B1 (en) | 2008-07-09 |
| KR20010023585A (en) | 2001-03-26 |
| SE9703160D0 (en) | 1997-09-02 |
| TW375824B (en) | 1999-12-01 |
| EP1019963A1 (en) | 2000-07-19 |
| SE9703160L (en) | 1999-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |