CA2305203A1 - Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure - Google Patents

Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure Download PDF

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Publication number
CA2305203A1
CA2305203A1 CA002305203A CA2305203A CA2305203A1 CA 2305203 A1 CA2305203 A1 CA 2305203A1 CA 002305203 A CA002305203 A CA 002305203A CA 2305203 A CA2305203 A CA 2305203A CA 2305203 A1 CA2305203 A1 CA 2305203A1
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CA
Canada
Prior art keywords
silicon carbide
group iii
iii nitride
carbide substrates
photonic devices
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Granted
Application number
CA002305203A
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French (fr)
Other versions
CA2305203C (en
Inventor
John Adam Edmond
Hua-Shuang Kong
Kathleen Marie Doverspike
Michelle Turner Leonard
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Wolfspeed Inc
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Individual
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Priority to CA002493503A priority Critical patent/CA2493503C/en
Publication of CA2305203A1 publication Critical patent/CA2305203A1/en
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Publication of CA2305203C publication Critical patent/CA2305203C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN

Abstract

An optoelectronic device with a Group III nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of galllium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rathen than elsewhere in the buffer structure.
CA002305203A 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure Expired - Fee Related CA2305203C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002493503A CA2493503C (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/944,547 US6201262B1 (en) 1997-10-07 1997-10-07 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US08/944,547 1997-10-07
PCT/US1998/021160 WO1999018617A1 (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA002493503A Division CA2493503C (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Publications (2)

Publication Number Publication Date
CA2305203A1 true CA2305203A1 (en) 1999-04-15
CA2305203C CA2305203C (en) 2005-11-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA002305203A Expired - Fee Related CA2305203C (en) 1997-10-07 1998-10-06 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Country Status (8)

Country Link
US (5) US6201262B1 (en)
EP (1) EP1027736A1 (en)
JP (2) JP4061019B2 (en)
KR (1) KR100592897B1 (en)
CN (1) CN1185719C (en)
AU (1) AU9689098A (en)
CA (1) CA2305203C (en)
WO (1) WO1999018617A1 (en)

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US6201262B1 (en) 2001-03-13
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US6492193B1 (en) 2002-12-10
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US6187606B1 (en) 2001-02-13
JP2001519603A (en) 2001-10-23
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US6630690B2 (en) 2003-10-07
US20020008241A1 (en) 2002-01-24
CN1185719C (en) 2005-01-19
KR100592897B1 (en) 2006-06-23
AU9689098A (en) 1999-04-27
US6373077B1 (en) 2002-04-16
KR20010031003A (en) 2001-04-16
CN1278949A (en) 2001-01-03

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