CA2310957A1 - Optical device - Google Patents

Optical device Download PDF

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Publication number
CA2310957A1
CA2310957A1 CA002310957A CA2310957A CA2310957A1 CA 2310957 A1 CA2310957 A1 CA 2310957A1 CA 002310957 A CA002310957 A CA 002310957A CA 2310957 A CA2310957 A CA 2310957A CA 2310957 A1 CA2310957 A1 CA 2310957A1
Authority
CA
Canada
Prior art keywords
carrier
injection
region
refractive index
injection region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002310957A
Other languages
French (fr)
Other versions
CA2310957C (en
Inventor
Yoshiaki Nakano
Byong-Jin Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of CA2310957A1 publication Critical patent/CA2310957A1/en
Application granted granted Critical
Publication of CA2310957C publication Critical patent/CA2310957C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3511—Self-focusing or self-trapping of light; Light-induced birefringence; Induced optical Kerr-effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation

Abstract

An optical device having a large extinction ratio and being suitable for the digital operation including first and second electrodes (7, 8) formed on both sides of a waveguide structure, respectively such that a carrier-injection region (3a) and a non-carrier injection regions (3b) are formed adjacent to each other in the waveguide structure. When mass carriers are stored in the carrier injection region, its refractive index is reduced lower than the non-carrier-injection regions. In this state, when a light wave with low optical power propagates through the carrier-injection region, since an amount of carriers consumed thereby is small, the refractive index of this region is still lower than the non-carrier-injection regions, and the input light wave is emitted sideways through the non-carrier-injection region. In contrast, when a light wave with high optical power propagates through the carrier-injection region, since the carrier consumption is large, the refractive index of this region (3a) becomes higher than the non-carrier-injection regions (3b), and the input light propagates through a waveguide which is optically induced to extend from the incident surface to the exit surface.
CA002310957A 1999-06-08 2000-06-07 Optical device Expired - Fee Related CA2310957C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11-160,311 1999-06-08
JP11160311A JP3038383B1 (en) 1999-06-08 1999-06-08 Optical device

Publications (2)

Publication Number Publication Date
CA2310957A1 true CA2310957A1 (en) 2000-12-08
CA2310957C CA2310957C (en) 2003-11-18

Family

ID=15712223

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002310957A Expired - Fee Related CA2310957C (en) 1999-06-08 2000-06-07 Optical device

Country Status (5)

Country Link
US (1) US6374029B1 (en)
EP (1) EP1059554B1 (en)
JP (1) JP3038383B1 (en)
CA (1) CA2310957C (en)
DE (1) DE60015855T2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7643759B2 (en) * 2005-01-12 2010-01-05 Sumitomo Electric Industries, Ltd. Signal-quality evaluation device, signal adjustment method, optical-signal evaluation system, and optical transmission system
JP4953852B2 (en) * 2007-02-14 2012-06-13 株式会社東芝 Optical output device, magnetic storage medium driving device, and head slider

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3234389C2 (en) * 1982-09-16 1995-03-09 Siemens Ag Semiconductor laser diode
JPS6371826A (en) * 1986-09-16 1988-04-01 Hitachi Ltd Optical semiconductor device
CA2101411C (en) * 1992-08-14 2003-06-10 Jean-Pierre Weber Tunable optical filter
JPH07312460A (en) * 1994-05-16 1995-11-28 Canon Inc Optical semiconductor element
FR2779838B1 (en) * 1998-06-15 2000-08-04 Alsthom Cge Alcatel OPTICAL COMPONENT WITH SEMICONDUCTOR AND AMPLIFIER AND WAVELENGTH CONVERTER COMPOSED BY THIS COMPONENT
JP3054707B1 (en) * 1999-03-19 2000-06-19 東京大学長 Optical isolator

Also Published As

Publication number Publication date
CA2310957C (en) 2003-11-18
DE60015855T2 (en) 2005-03-31
EP1059554B1 (en) 2004-11-17
EP1059554A3 (en) 2002-08-28
JP3038383B1 (en) 2000-05-08
EP1059554A2 (en) 2000-12-13
US6374029B1 (en) 2002-04-16
DE60015855D1 (en) 2004-12-23
JP2000347230A (en) 2000-12-15

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Effective date: 20130607