CA2347429A1 - Conductive isostructural compounds - Google Patents

Conductive isostructural compounds Download PDF

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Publication number
CA2347429A1
CA2347429A1 CA002347429A CA2347429A CA2347429A1 CA 2347429 A1 CA2347429 A1 CA 2347429A1 CA 002347429 A CA002347429 A CA 002347429A CA 2347429 A CA2347429 A CA 2347429A CA 2347429 A1 CA2347429 A1 CA 2347429A1
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CA
Canada
Prior art keywords
compounds
isostructural
conductive
isostructural compounds
controlled
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CA002347429A
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French (fr)
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CA2347429C (en
Inventor
Mercouri G. Kanatzidis
Duck Young Chung
Stephane Denardi
Sandrine Sportouch
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Michigan State University MSU
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Publication of CA2347429C publication Critical patent/CA2347429C/en
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/761—Unit-cell parameters, e.g. lattice constants

Abstract

A family of isostructural compounds have been prepared having the general formula A n PB m B in Q2n+m (figure 1). These compounds (figure 1) possess a NaCl lattice type structure (figure 1) as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m.
These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.
CA002347429A 1998-10-13 1999-10-13 Conductive isostructural compounds Expired - Fee Related CA2347429C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10396198P 1998-10-13 1998-10-13
US60/103,961 1998-10-13
PCT/US1999/023849 WO2000024040A2 (en) 1998-10-13 1999-10-13 Conductive isostructural compounds

Publications (2)

Publication Number Publication Date
CA2347429A1 true CA2347429A1 (en) 2000-04-27
CA2347429C CA2347429C (en) 2004-02-24

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Family Applications (1)

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CA002347429A Expired - Fee Related CA2347429C (en) 1998-10-13 1999-10-13 Conductive isostructural compounds

Country Status (7)

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US (2) US6312617B1 (en)
EP (3) EP2068348B1 (en)
AT (2) ATE470951T1 (en)
AU (1) AU2705800A (en)
CA (1) CA2347429C (en)
DE (1) DE69942491D1 (en)
WO (1) WO2000024040A2 (en)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179243A (en) * 2001-08-31 2003-06-27 Basf Ag Photovoltaic cell active material and cell containing the same
US6812395B2 (en) 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
CN100452466C (en) * 2003-09-12 2009-01-14 密歇根州州立大学托管委员会 Silver-containing p-type semiconductor
US8481843B2 (en) * 2003-09-12 2013-07-09 Board Of Trustees Operating Michigan State University Silver-containing p-type semiconductor
US20050139250A1 (en) * 2003-12-02 2005-06-30 Battelle Memorial Institute Thermoelectric devices and applications for the same
JP2007518252A (en) * 2003-12-02 2007-07-05 バッテル メモリアル インスティチュート Thermoelectric device and its use
US8455751B2 (en) * 2003-12-02 2013-06-04 Battelle Memorial Institute Thermoelectric devices and applications for the same
CN1954138B (en) 2004-03-02 2011-02-16 罗斯蒙德公司 Process device with improved power generation
US7591913B2 (en) * 2004-04-06 2009-09-22 Massachusetts Institute Of Technology Thermoelectric properties by high temperature annealing
US8538560B2 (en) 2004-04-29 2013-09-17 Rosemount Inc. Wireless power and communication unit for process field devices
US8145180B2 (en) 2004-05-21 2012-03-27 Rosemount Inc. Power generation for process devices
US8787848B2 (en) 2004-06-28 2014-07-22 Rosemount Inc. RF adapter for field device with low voltage intrinsic safety clamping
US8865995B2 (en) * 2004-10-29 2014-10-21 Trustees Of Boston College Methods for high figure-of-merit in nanostructured thermoelectric materials
US7465871B2 (en) * 2004-10-29 2008-12-16 Massachusetts Institute Of Technology Nanocomposites with high thermoelectric figures of merit
US9184364B2 (en) 2005-03-02 2015-11-10 Rosemount Inc. Pipeline thermoelectric generator assembly
US7255846B2 (en) * 2005-05-03 2007-08-14 Massachusetts Institute Of Technology Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions
US7586033B2 (en) * 2005-05-03 2009-09-08 Massachusetts Institute Of Technology Metal-doped semiconductor nanoparticles and methods of synthesis thereof
US7847179B2 (en) 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
US7952015B2 (en) * 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
US20100111754A1 (en) * 2006-07-12 2010-05-06 Gm Global Technology Operations, Inc. Potassium and Sodium Filled Skutterudites
US8188359B2 (en) 2006-09-28 2012-05-29 Rosemount Inc. Thermoelectric generator assembly for field process devices
US20080289677A1 (en) * 2007-05-25 2008-11-27 Bsst Llc Composite thermoelectric materials and method of manufacture
US20090084421A1 (en) * 2007-09-28 2009-04-02 Battelle Memorial Institute Thermoelectric devices
US20090178700A1 (en) * 2008-01-14 2009-07-16 The Ohio State University Research Foundation Thermoelectric figure of merit enhancement by modification of the electronic density of states
CN102077374A (en) * 2008-04-24 2011-05-25 Zt普拉斯公司 Improved thermoelectric materials combining increased power factor and reduced thermal conductivity
US8929948B2 (en) 2008-06-17 2015-01-06 Rosemount Inc. Wireless communication adapter for field devices
US8694060B2 (en) 2008-06-17 2014-04-08 Rosemount Inc. Form factor and electromagnetic interference protection for process device wireless adapters
WO2009154756A1 (en) 2008-06-17 2009-12-23 Rosemount Inc. Rf adapter for field device with variable voltage drop
CN102803132A (en) * 2009-04-13 2012-11-28 美国俄亥俄州立大学 Thermoelectric alloys with improved thermoelectric power factor
US9674976B2 (en) 2009-06-16 2017-06-06 Rosemount Inc. Wireless process communication adapter with improved encapsulation
US8626087B2 (en) 2009-06-16 2014-01-07 Rosemount Inc. Wire harness for field devices used in a hazardous locations
US10761524B2 (en) 2010-08-12 2020-09-01 Rosemount Inc. Wireless adapter with process diagnostics
US8795545B2 (en) 2011-04-01 2014-08-05 Zt Plus Thermoelectric materials having porosity
US9310794B2 (en) 2011-10-27 2016-04-12 Rosemount Inc. Power supply for industrial process field device
US9362429B2 (en) 2013-04-30 2016-06-07 Alliance For Sustainable Energy, Llc Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production
CN103579486B (en) * 2013-11-20 2016-08-10 遵义师范学院 Potassium mixes bismuth-antimony system i.e. Bi85Sb15-xKx low-temperature thermoelectric material and preparation method thereof
KR102094451B1 (en) * 2016-10-31 2020-03-27 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
WO2018080085A1 (en) * 2016-10-31 2018-05-03 주식회사 엘지화학 Chalcogenide compound, production method thereof and thermoelectric element comprising same
KR102121434B1 (en) * 2017-05-15 2020-06-10 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
KR102123041B1 (en) * 2017-06-07 2020-06-15 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
KR102121436B1 (en) * 2017-06-27 2020-06-10 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
CN110114305B (en) * 2017-06-30 2023-01-24 株式会社Lg化学 Chalcogen-containing compound, method for producing the same, and thermoelectric element comprising the same
US11508865B2 (en) 2017-07-17 2022-11-22 Northwestern University Copper halide chalcogenide semiconductor compounds for photonic devices
KR102138937B1 (en) * 2017-09-29 2020-07-28 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
WO2019066580A2 (en) * 2017-09-29 2019-04-04 주식회사 엘지화학 Chalcogen compound, method for preparing same, and thermoelectric element comprising same
WO2020021783A1 (en) * 2018-07-23 2020-01-30 パナソニックＩｐマネジメント株式会社 Thermoelectric conversion material and method of obtaining power using thermoelectric conversion material
KR102573731B1 (en) * 2018-08-24 2023-08-31 주식회사 엘지화학 Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same
CN110106554A (en) * 2019-06-14 2019-08-09 中国科学院新疆理化技术研究所 Bromine selenium barium aluminium birefringece crystal and its preparation method and application
CN116281881B (en) * 2023-03-24 2024-04-05 西安交通大学 Bismuth telluride-based thermoelectric material, preparation method and application thereof

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2602095A (en) 1950-06-03 1952-07-01 Gen Electric Thermoelectric device
US2728637A (en) 1953-07-27 1955-12-27 Du Pont Ternary alkaline earth metal sulfides of titanium and their preparation
US2770528A (en) 1954-03-15 1956-11-13 Du Pont Barium ferrous group metal ternary sulfides and their preparation
US2882467A (en) 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom
US2882468A (en) 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom
US3008797A (en) 1957-10-10 1961-11-14 Du Pont Ternary selenides and tellurides of silver and antimony and their preparation
NL280217A (en) * 1958-11-28
NL253488A (en) * 1959-07-13
NL265338A (en) * 1960-06-03 1900-01-01
NL278300A (en) * 1961-06-16
US3945855A (en) * 1965-11-24 1976-03-23 Teledyne, Inc. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element
JPS63251290A (en) * 1987-04-08 1988-10-18 Hitachi Ltd Optical recording medium, method for regeneration and application thereof
US5368701A (en) * 1993-06-11 1994-11-29 Nec Research Institute, Inc. Process for forming Zintl phases and the products thereof
US5610366A (en) 1993-08-03 1997-03-11 California Institute Of Technology High performance thermoelectric materials and methods of preparation
US6069312A (en) 1994-01-28 2000-05-30 California Institute Of Technology Thermoelectric materials with filled skutterudite structure for thermoelectric devices
US5708233A (en) 1994-02-22 1998-01-13 Kabushiki Kaisha Ohara Thermoelectric semiconductor material
US5448109B1 (en) 1994-03-08 1997-10-07 Tellurex Corp Thermoelectric module
JP3455588B2 (en) * 1994-06-29 2003-10-14 浜松ホトニクス株式会社 Photoelectric detector with cooling device and method of manufacturing the same
JP3092463B2 (en) 1994-10-11 2000-09-25 ヤマハ株式会社 Thermoelectric material and thermoelectric conversion element
US5773829A (en) * 1996-11-05 1998-06-30 Iwanczyk; Jan S. Radiation imaging detector
CA2252671A1 (en) 1997-02-21 1998-08-27 Volvo Aero Corporation A thermoelectric generator unit
US5936193A (en) * 1997-05-09 1999-08-10 Parise; Ronald J. Nighttime solar cell
US6129673A (en) * 1998-06-08 2000-10-10 Advanced Monitors, Corp. Infrared thermometer
US6103967A (en) 1998-06-29 2000-08-15 Tellurex Corporation Thermoelectric module and method of manufacturing the same
US6313393B1 (en) 1999-10-21 2001-11-06 Battelle Memorial Institute Heat transfer and electric-power-generating component containing a thermoelectric device
DE19955788A1 (en) 1999-11-19 2001-05-23 Basf Ag Thermoelectrically active materials and generators containing them
US8481843B2 (en) * 2003-09-12 2013-07-09 Board Of Trustees Operating Michigan State University Silver-containing p-type semiconductor

Also Published As

Publication number Publication date
US6312617B1 (en) 2001-11-06
WO2000024040A3 (en) 2000-07-20
EP1129473B1 (en) 2010-06-09
DE69942491D1 (en) 2010-07-22
ATE470951T1 (en) 2010-06-15
AU2705800A (en) 2000-05-08
ATE546826T1 (en) 2012-03-15
CA2347429C (en) 2004-02-24
EP1129473A2 (en) 2001-09-05
EP2009672A1 (en) 2008-12-31
EP2068348A1 (en) 2009-06-10
EP1129473A4 (en) 2004-03-17
EP2068348B1 (en) 2012-02-22
WO2000024040A2 (en) 2000-04-27
USRE39640E1 (en) 2007-05-22

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