CA2358215A1 - Methods utilizing scanning probe microscope tips and products therefor or produced thereby - Google Patents

Methods utilizing scanning probe microscope tips and products therefor or produced thereby Download PDF

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Publication number
CA2358215A1
CA2358215A1 CA002358215A CA2358215A CA2358215A1 CA 2358215 A1 CA2358215 A1 CA 2358215A1 CA 002358215 A CA002358215 A CA 002358215A CA 2358215 A CA2358215 A CA 2358215A CA 2358215 A1 CA2358215 A1 CA 2358215A1
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Prior art keywords
tip
compound
patterning compound
substrate
formula
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Granted
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CA002358215A
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French (fr)
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CA2358215C (en
Inventor
Chad A. Mirkin
Richard Piner
Seunghum Hong
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Northwestern University
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/007—Processes for applying liquids or other fluent materials using an electrostatic field
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/863—Atomic force probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/877—Chemically functionalized
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/24—Nuclear magnetic resonance, electron spin resonance or other spin effects or mass spectrometry

Abstract

An atomic force microscope (AFM) having a tip coated with hydrophobic compounds, which is performed as dip pen nanolithography (DPN), for transporting molecules from the atomic force microscope tip (AFM) to a gold substrate (AU) to write patterns on the gold substrate (AU).

Claims (45)

1. A method of nanolithography comprising:
providing a substrate;
providing a scanning probe microscope tip;
coating the tip with a patterning compound; and contacting the coated tip with the substrate so that the compound is applied to the substrate so as to produce a desired pattern.
2. The method of Claim 1 wherein the substrate is gold and the patterning compound is a protein or peptide or has the formula R1SH, R1SSR2, R1SR2, R1SO2H, (R1)3P, R1NC, R1CN,(R1)3N, R1COOH, or ArSH, wherein:
Rl and R2 each has the formula X(CH2)n and, if a compound is substituted with both Rl and R2, then Rl and R2 can be the same or diffferent;
n is 0-30;
Ar is an aryl;
X is -CH3, -CHCH3, -COON, -CO2(CH2)mCH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, -NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
3 . The method of Claim 2 wherein the patterning compound has the formula R1SH or ArSH.
4. The method of Claim 3 wherein the patterning compound is propanedithiol, hexanedithiol, octanedithiol, n-hexadecanethiol, n-octadecanethiol, n-docosanethiol, 11-mercapto-1-undecanol, 16-mercapto-1-hexadecanoic acid, .alpha.,.alpha.'-p-xylyldithiol, 4,4'-biphenyldithiol, terphenyldithiol, or DNA-alkanethiol.
5. The method of Claim 1 wherein the substrate is aluminum, gallium arsenide or titanium dioxide and the patterning compound has the formula R1SH, wherein:
Rl has the formula X(CH2)n;
n is 0-30;
X is -CH3, -CHCH3, -COOH, -CO2(CH2)m CH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, -NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
6. The method of Claim 5 wherein the patterning compound is 2-mercaptoacetic acid or n-octadecanethiol.
7. The method of Claim 1 wherein the substrate is silicon dioxide and the patterning compound is a protein or peptide or has the formula R1SH or R1SiCl3, wherein:
R1 has the formula X(CH2)n;
n is 0-30;
X is -CH3, -CHCH3, -COOH, -CO2(CH2)m CH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, -NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
8. The method of Claim 7 wherein the patterning compound is 16-mercapto-1-hexadecanoic acid, octadecyltrichlorosilane or 3-(2-aminoethylamino)propyltrimethoxysilane.
9. The method of Claim 1 wherein the tip is coated with the patterning compound by contacting the tip with a solution of the patterning compound one or more times.
10. The method of Claim 9 further comprising drying the tip each time it is removed from the solution of the patterning compound, and the dried tip is contacted with the substrate to produce the desired pattern.
11. The method of Claim 9 further comprising drying the tip each time it is removed from the solution of the patterning compound, except for the final time so that the tip is still wet when it is contacted with the substrate to produce the desired pattern.
12. The method of Claim 9 further comprising:
rinsing the tip after it is has been used to apply the pattern to the substrate;
coating the tip with a different patterning compound; and contacting the coated tip with the substrate so that the patterning compound is applied to the substrate so as to produce a desired pattern.
13. The method of Claim 12 wherein the rinsing, coating and contacting steps are repeated using as many different patterning compounds as are needed to make the desired pattern(s).
14. The method of Claim 13 further comprising providing a positioning system for aligning one pattern with respect to the other pattern(s).
15. The method of Claim 1 wherein a plurality of tips is provided.
16. The method of Claim 15 wherein each of the plurality of tips is contacted with the same patterning compound.
17. The method of Claim 15 wherein the plurality of tips is contacted with a plurality of patterning compounds.
18. The method of Claim 15 wherein each tip produces the same pattern as the other tip(s).
19. The method of Claim 18 further comprising providing a positioning system for aligning one pattern with respect to the other pattern(s).
20. The method of Claim 15 wherein at least one tip produces a pattern different than that produced by the other tip(s).
21. The method of Claim 20 further comprising providing a positioning system for aligning one pattern with respect to the other pattern(s).
22. The method of Claim 1 wherein the tip is coated with a first patterning compound and is used to apply the first patterning compound to some or all of a second patterning compound which has already been applied to the substrate, the second patterning compound being capable of reacting or stably combining with the first patterning compound.
23. The method of Claim 1 further comprising treating the tip before coating it with the patterning compound to enhance physisorption of the patterning compound.
24. The method of Claim 23 wherein the tip is coated with a thin solid adhesion layer to enhance physisorption of the patterning compound.
25. The method of Claim 24 wherein the tip is coated with titanium or chromium to form the thin solid adhesion layer.
26. The method of Claim 23 wherein the patterning compound is in an aqueous solution, and the tip is treated to make it hydrophilic in order to enhance physisorption of the patterning compound.
27. The method of any one of Claims 1-26 wherein the tip is an atomic force microscope tip.
28. A substrate patterned by the method of any one of Claims 1-26.
29. A kit for nanolithography comprising:
a substrate; and a scanning probe microscope tip.
30. The kit of Claim 29 wherein the tip is an atomic force microscope tip.
31. The kit of Claim 29 or 30 comprising a plurality of tips.
32. The kit of Claim 29 further comprising one or more containers, each container holding a patterning compound.
33. The kit of Claim 32 wherein the substrate is gold, and the patterning compound is a protein or peptide or has the formula R1SH, R1SSR2, R1SR2, R1SO2H, (R1)3P, R1NC, R1CN,(Rl)3N, R1COOH, or ArSH, wherein:
Rl and R2 each has the formula X(CH2)n and, if a compound is substituted with both Rl and R2, then Rl and R2 can be the same or diffferent;
n is 0-30;
Ar is an aryl;
X is -CH3, -CHCH3, -COOH, -CO2(CH2)m CH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, -NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
34. The kit of Claim 33 wherein the patterning compound has the formula R1SH or ArSH.
35. The kit of Claim 34 wherein the patterning compound is propanedithiol, hexanedithiol, octanedithiol, n-hexadecanethiol, n-octadecanethiol, n-docosanethiol, 11-mercapto-1-undecanol, 16-mercapto-1-hexadecanoic acid, .alpha.,.alpha.'-p-xylyldithiol, 4,4'-biphenyldithiol, terphenyldithiol, or DNA-alkanethiol.
36. The kit of Claim 32 wherein the substrate is aluminum, gallium arsenide or titanium dioxide, and the patterning compound has the formula R1SH, wherein:
R1 has the formula X(CH2)n;
n is 0-30;
X is -CH3, -CHCH3, -COOH, -CO2(CH2)m CH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
37. The kit of Claim 36 wherein the patterning compound is 2-mercaptoacetic acid or n-octadecanethiol.
38. The kit of Claim 32 wherein the substrate is silicon dioxide, and the patterning compound is a protein or peptide or has the formula R1 SH or R1SiC13, wherein:
R1 has the formula X(CH2)n;
n is 0-30;
X is -CH3, -CHCH3, -COOH, -CO2(CH2)m CH3, -OH, -CH2OH, ethylene glycol, hexa(ethylene glycol), -O(CH2)m CH3, -NH2, -NH(CH2)m NH2, halogen, glucose, maltose, fullerene C60, a nucleic acid, a protein, or a ligand; and m is 0-30.
39. The kit of Claim 38 wherein the patterning compound is 16-mercapto-1-hexadecanoic acid, octadecyltrichlorosilane or 3-(2-aminoethylamino)propyltrimethoxysilane.
40. A method of performing atomic force microscope (AFM) imaging in air comprising:
providing an AFM tip;
contacting the AFM tip with a hydrophobic compound so that the AFM
tip is coated with the hydrophobic compound, the hydrophobic compound being selected so that AFM imaging using the coated AFM tip is improved compared to AFM
imaging using the same tip which is uncoated; and performing AFM imaging in air with the coated tip.
41. The method of Claim 40 wherein the hydrophobic compound has the formula R4NH2 wherein:
R4 is an alkyl of the formula CH3(CH2)n or an aryl; and n is 0-30.
42. The method of Claim 41 wherein the hydrophobic compound is 1-dodecylamine.
43. An atomic force microscope (AFM) tip coated with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed in air using the coated AFM tip is improved compared to AFM imaging performed using the same tip which is uncoated.
44. The tip of Claim 43 which is coated with a hydrophobic compound having the formula R4NH2 wherein:
R4 is an alkyl of the formula CH3(CH2)n or an aryl; and n is 0-30.
45. The tip of Claim 44 which is coated with 1-dodecylamine.
CA2358215A 1999-01-07 2000-01-07 Methods utilizing scanning probe microscope tips and products therefor or produced thereby Expired - Fee Related CA2358215C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11513399P 1999-01-07 1999-01-07
US60/115,133 1999-01-07
US15763399P 1999-10-04 1999-10-04
US60/157,633 1999-10-04
PCT/US2000/000319 WO2000041213A1 (en) 1999-01-07 2000-01-07 Methods utilizing scanning probe microscope tips and products therefor or produced thereby

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CA2358215A1 true CA2358215A1 (en) 2000-07-13
CA2358215C CA2358215C (en) 2012-07-31

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US (5) US6635311B1 (en)
EP (1) EP1157407B1 (en)
JP (2) JP3963650B2 (en)
KR (1) KR100668591B1 (en)
CN (2) CN101003355B (en)
AT (1) ATE488858T1 (en)
AU (1) AU778568B2 (en)
CA (1) CA2358215C (en)
DE (1) DE60045239D1 (en)
HK (2) HK1041744B (en)
TW (1) TW473767B (en)
WO (1) WO2000041213A1 (en)

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