CA2424507A1 - Ceramic susceptor - Google Patents

Ceramic susceptor Download PDF

Info

Publication number
CA2424507A1
CA2424507A1 CA002424507A CA2424507A CA2424507A1 CA 2424507 A1 CA2424507 A1 CA 2424507A1 CA 002424507 A CA002424507 A CA 002424507A CA 2424507 A CA2424507 A CA 2424507A CA 2424507 A1 CA2424507 A1 CA 2424507A1
Authority
CA
Canada
Prior art keywords
fluctuation
heating element
peripheral edge
less
resistive heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002424507A
Other languages
French (fr)
Other versions
CA2424507C (en
Inventor
Akira Kuibira
Masuhiro Natsuhara
Hirohiko Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CA2424507A1 publication Critical patent/CA2424507A1/en
Application granted granted Critical
Publication of CA2424507C publication Critical patent/CA2424507C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic

Abstract

Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed.
Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ~0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ~1.0% or less. Preferable is a superior isothermal rating of ~0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ~0.5%.
CA002424507A 2002-04-24 2003-04-04 Ceramic susceptor Expired - Fee Related CA2424507C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002121616A JP2003317906A (en) 2002-04-24 2002-04-24 Ceramic heater
JP2002-121616 2002-04-24

Publications (2)

Publication Number Publication Date
CA2424507A1 true CA2424507A1 (en) 2003-10-24
CA2424507C CA2424507C (en) 2005-07-12

Family

ID=29243592

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002424507A Expired - Fee Related CA2424507C (en) 2002-04-24 2003-04-04 Ceramic susceptor

Country Status (8)

Country Link
US (2) US6806443B2 (en)
EP (1) EP1363316B1 (en)
JP (1) JP2003317906A (en)
KR (1) KR100551643B1 (en)
CN (1) CN1225342C (en)
CA (1) CA2424507C (en)
DE (1) DE60316746T2 (en)
TW (1) TWI236527B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841542A (en) * 2017-11-24 2019-06-04 昭和电工株式会社 SiC epitaxial growth device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003317906A (en) * 2002-04-24 2003-11-07 Sumitomo Electric Ind Ltd Ceramic heater
US7394043B2 (en) * 2002-04-24 2008-07-01 Sumitomo Electric Industries, Ltd. Ceramic susceptor
KR100478744B1 (en) * 2002-05-02 2005-03-28 주성엔지니어링(주) suscetpor and manufacturing method the same
EP1577937B1 (en) * 2002-12-26 2010-07-28 Mitsubishi Heavy Industries, Ltd. Electrostatic chuck
JP4756695B2 (en) * 2006-02-20 2011-08-24 コバレントマテリアル株式会社 Sheet heater
DE102007016029A1 (en) * 2007-03-30 2008-10-02 Sig Technology Ag Holding arrangement used in a CVD or a PVD installation comprises a holder having a section made from a dielectric material which is in contact with the substrate during a deposition process
KR101477142B1 (en) * 2013-09-13 2014-12-29 (주)티티에스 Substrate supporting unit and Substrate supporting apparatus having the same
JP1541874S (en) * 2015-03-16 2016-01-18
US10636690B2 (en) * 2016-07-20 2020-04-28 Applied Materials, Inc. Laminated top plate of a workpiece carrier in micromechanical and semiconductor processing
US10679873B2 (en) * 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater
DE102017121041A1 (en) * 2017-05-24 2018-11-29 Webasto SE Heater and method of making the same
CN109738481A (en) * 2018-11-27 2019-05-10 武汉嘉仪通科技有限公司 A kind of the Seebeck coefficient measuring device and method of thin-film material
CN112822798B (en) * 2020-12-31 2022-11-25 博宇（天津）半导体材料有限公司 Vertical ceramic heater
CN116120085A (en) * 2023-02-14 2023-05-16 广东工业大学 Method for connecting SiC ceramic by combining plasma surface etching with glass ceramic, ceramic connecting piece prepared by method and application of ceramic connecting piece

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0447155B1 (en) * 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
US6133557A (en) * 1995-01-31 2000-10-17 Kyocera Corporation Wafer holding member
JP3477062B2 (en) 1997-12-26 2003-12-10 京セラ株式会社 Wafer heating device
JPH11260534A (en) * 1998-01-09 1999-09-24 Ngk Insulators Ltd Heating apparatus and manufacture thereof
JP4166345B2 (en) * 1998-10-07 2008-10-15 日本碍子株式会社 Corrosion resistant material against chlorine gas
JP3381909B2 (en) 1999-08-10 2003-03-04 イビデン株式会社 Ceramic heater for semiconductor manufacturing and inspection equipment
JP3222121B2 (en) 1999-10-22 2001-10-22 イビデン株式会社 Ceramic heater for semiconductor manufacturing and inspection equipment
JP2001196152A (en) * 2000-01-13 2001-07-19 Sumitomo Electric Ind Ltd Ceramics heater
JP2001203257A (en) * 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd Wafer holder for semiconductor manufacturing apparatus
JP2003317906A (en) * 2002-04-24 2003-11-07 Sumitomo Electric Ind Ltd Ceramic heater

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109841542A (en) * 2017-11-24 2019-06-04 昭和电工株式会社 SiC epitaxial growth device
CN109841542B (en) * 2017-11-24 2023-09-26 株式会社力森诺科 SiC epitaxial growth device

Also Published As

Publication number Publication date
TWI236527B (en) 2005-07-21
EP1363316A2 (en) 2003-11-19
US20030201264A1 (en) 2003-10-30
KR100551643B1 (en) 2006-02-14
US6946625B2 (en) 2005-09-20
KR20030084683A (en) 2003-11-01
EP1363316A3 (en) 2004-01-02
CN1225342C (en) 2005-11-02
EP1363316B1 (en) 2007-10-10
DE60316746D1 (en) 2007-11-22
CN1453095A (en) 2003-11-05
US6806443B2 (en) 2004-10-19
CA2424507C (en) 2005-07-12
US20050000956A1 (en) 2005-01-06
JP2003317906A (en) 2003-11-07
TW200406566A (en) 2004-05-01
DE60316746T2 (en) 2008-02-07

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