CA2442712C

CA2442712C - Semiconductor laser device and solid-state laser device using the same

Info

Publication number: CA2442712C
Application number: CA2442712A
Authority: CA
Inventors: Satoshi Yamaguchi; Naoya Hamada
Original assignee: NIPPON BUNRI UNIVERSITY; Nippon Steel Corp
Current assignee: NIPPON BUNRI UNIVERSITY; Nippon Steel Corp
Priority date: 2001-03-30
Filing date: 2002-03-12
Publication date: 2010-06-29
Anticipated expiration: 2022-03-12
Also published as: KR20030085582A; CN1500223A; JPWO2002082163A1; WO2002082163A1; CN1313861C; JP3862657B2; US7653115B2; KR100640127B1; EP1376197A1; EP1376197B1; EP1376197A4; US20040091013A1; CA2442712A1

Abstract

A semiconductor laser device increased in energy density at the focus; and a semiconductor laser excitation solid laser device using the same. A row of dotted-line-wise series-connected laser beams are disposed in front of stack array laser elements emitting a group of two-dimensional array-like parallel laser beams, each row of laser beams refracted substantially normal to the direction of the dotted lines and collimated are received, the direction of the laser beams from emitters or a group of emitters is turned through a right angle and the laser beams are emitted, whereby the laser beams are converted into a plurality of rows of laser beams paralleled substantially in a ladder form, which rows of laser beams are beam-compressed into a row of laser beams, the latter being converted into a series disposition, a row of parallel compressed laser beams are turned through a right angle and emitted, whereby all laser beams are converted into a group of laser beams paralleled in a single row, the group of laser beams being collimated and converged to a focus.

Description

S~'krCIFICATION
N5C,8UN-J864 SEMICONDUCTOR LASER DEVICE AND SOLID-STATE LASER DEvICE
U SING THE SAME
TECHNZCP~,~ k''IE~17 The present invention relates to a beam converter using a stack array laser diode and a laser device using the beam converter. The invention further relates to a semiconductor laser condenser for condensing the semiconductor laser light into a minuscule spot and a LD
(laser diode) pumped solid-state laser device fox optically exciting a solid-state laser device with the semiconductor laser light.
BACKGROUND ART
YAG (yttrium aluminum garnet) has been used as a laser for laser machining and medical applications. The YAG laser which is a solid-state laser, however, has a low electrical-to-optical conversion efficiency. This is by reason o~ th.p fact that the xe lamp and the flash lamp of the conventional YAG laser used for exciting the SoJ.id-state laser medium is very low in luminous efficiency_ ~.lso, the luminous spectrum band of the abov~entioned lamp is so raids that only a small portion of the luminous energy can be used for the solid-state laser excitation. Normally, therefore, a bulky device and a large amount of cooling water are required.
On the other hand, the semiconductor laser (LD) has a high luminous efficiency and is so compact that no 3~ bulky cooling unit is required. In recent years, the price of the high-power semiconductor laser has conspicuously decreased. This semiconductor laser is desirably used also for the laser maCl;~,zning. The beam quality of the semiconductor laser, however, is generally ac low snd the output power level of the single-stripe semiconductor laser is lim,ited_ Therefore, tho semiCOnductor laser can. be used directly for laser ' -z-machining only in the limited fields of application.
A multi-stxipe semiconductor laser, in which 10 to 100 stripes of active layers for radiating the laser beams are linearly arranged to provide a dashed-line light source, is xnown as a high-power lager.
A linear-array semiconductor laser of about 50 w in Cw (continuous wave oscillation) output with the active layers of the semiconductor laser aligned one-dimen$ionally is available. In the multi-stripe array l0 semiconductor laser, as shown in Fig. 1, for example, tens to several tens of stripes 100 ~m to 200 wm wide with each ~acet making up an emitter are arranged at regular intervals within a plane 1 cm wide.
Several layers of this linear array semiconductor arg stacked into a two-dimensional array as shown, in gig.
1, thereby making it possible to easily inCxease the output. This two-dimensional arxay semiconductor laser is referred to as the stack array semiconductor laser.
As described above, one semiconductor laser device provides a light source with line segments arranged in a two-dimensional array for emitting Laser beams in the number of n multip2ied by ten to several tens, where n is the number of stacxed layors. Also, a high power semiconductor laser such as the quasi-Cw semiconductor laser provides a light source, in which substantially continuous linear light sources in the number of stacked layers are arranged comprising a multiplicity of clvsely-arranged emitters in which esch emitted light beam is mixed with a light beam immediately after emission from an adjoining emitter.
For using a multi-stripe array semiconductor laser in laser machining and medical applications, means must be devised to concentrate high-level energy in a narrow area. Each striped light beam is emitted from a flat light source, and the beam divergent angle has a component ~ perpendicular to the active layer which is as - ' _ 3 large as about 40 to 50 degrees, while the cvrnpvnent B
parallel to the active layer i,s about 10 degrees. The width of the light source includes the vertical portion as small as not more than 1 ~.m and the horiaontal portion as wide as 100 ~,m to 200 ~.m as desc-ibed above.
The above-mentioned characteristics of the sAmiconductor laser are such that in the case where the light emitted from the semiconductor lasex' is focused using a lens, the vertical cvmponen- can be focused easily, while the horizontal component is not easily focused into a small spo~c due to a large width and a smaller divergent angle than the vertical component.
The light emitted from a stack array laser diode can be focused into a lineax line by use of a cylindrical lens for each linear array, but cannot be easily focused in a dot Spot, A Comparative7.y efficient focusing can be achieved, on the other hand, by a method in which micro lenses are arranged in one-to-one correspondence with stripes, ~,rhexeby each beam from stripe is collimated and focused thereby to superimpose a plurality of beams. 7Ch.e spot diameter of the focused beam is the product of the width of the light source and the magnification (~2/f1) determined by the ratio of the distance between the focusing lens and the beam spot (i.e. the focal length fa of the focusing lens) to the distance between the semiconductor laser stripes and the miCZO lens (i.e. the focal length fl of the micro lens).
Thus, the long diameter W1 (horizontal component) of the beam spot is equal to the product (w0-f2/fl) of the width of the stripe (c~0: 100 ~.m to 200 E.un) and the aforementioned magnification. As to the vertical component, on the other hand, a spot diameter does n.ot become large by multiplying the same ratio (f2/~1) due to a very small width of the light source (not more than 1 _ 1]
Vim). Considering the transverse foCUSing of the stripe, therefore, the micro lens is desirably arranged as distant from the stripe as possible to secure a small beam spot and a high light inten.sity_ Due to a large divergence angle of the vertical component of the stripe light beam and hence a large radiation energy leaking out of the lens aperture, however, it is difficult to arrange the micro lens as described above. In an alternative idea, therefore, the vertical and hor,iaontal components are focused by d~.fferent cylindrical lenses, so that the lens for focusing the vertical component is arranged in one-to-ot7.e correspondence with each linear array semiconductor laser in proximity to the stripes, whale the lens for focusing the horizontal component i3 arranged in one-to-Ox7e correspondence faith each equivalent stripe group of the stack layer distant from the stripes.
As an example, a stack array Ln is considered in which lz stripes each 1 ~,m thick and 200 ~,~.m wide are spaced 80o ~m apart, and the linear arrays are stacked in several layers. The horizontal component of the emitted beam from the stripe has a beam divergent azagle of 10 degrees. Therefore, beams emitted from the adjoining stripes are superposed with each other at the distance of 3.4 mm from the light-emitting facet of the stripe. In the case ~.,~here a lens is placed after the superposition, part of the light beams is converter. into a light ray at an angle to the lens axis and is focused at a point different from the focal point of the focusing lens, thereby reducing the system efficiency.
In order to Collimate tha light radiated from each stripe group us~.~g a micro cylindrical lens array, therefore, a lens (having a focal length fl of not larger than 3.4 xflA1) is requixad to be placed at a position as near as not more than 3.4 mm. The diameter of the focused spot is unavoidably large, if determined as the _ product of the stripe width and the magnification (f2/fl) dependent on the combination with the focal length f2 of the focusing lens.
In the prior art, as described above, the laser beam 5 emitting fxom the stack array Lb providing a Light source comprising two-dimensional array of Line segments cannot be easily concentrated with high density in a small area.
Also, according to the end surface excitation method using the optical excitation from the direction of the optical axis of the LD pumped solid-State laser, a highly efficient single transverse-mode oscillation can be realized by matching the space excited by the semiconductor laser output light with the oscillation mode volume of the solid-state laser.
In the stack array semiconductor laser oscillation element with the active layers of the semiconductor laser arranged two-dimensionally, the output of about 1 kW is obtained and sufficiently usable for the laser machining.
If this stack array laser beam is directly focused using an optical system and aan be reduced to a sufficiently small spot, the output of the semiconductor laser should be usable for tho laser machining.
In the case where the light emitted from the stack arxay semiconductor laser aaurce is focused using a lens, however, the vertical component can be focused with comparative ease, whereaN the horizontal camporient is difficult to focus to a minuscule spot due to the large width of the light source.
An attempt to use the stack axray semiconductor laser ae an excitation source for the solid-state laser leads to the result that the end surface excitation method hgving a high excitation efficiency cannot be emploxed because a plurality of beams cannot be focused to a single spot using a usual lens system due to the fact that array width is about lem. Therefore, only the side pumping method is resorted to.
DISOLOSURE 0~ THE INVENTION

In view of the problem described above, an object o~
this invention is to provide a semiconductor laser device using a stack array semiconductor laser with an increased energy density at the focal point.
Another object of the invention is to provide a novel beam converter comprising a semiconductor laser device using a stack array semiconductor laser in which the energy density can be increased by minimizing the focal spot size of the semiconductor laser device.
Still another object of the invention is to provide a highly efficient and high power Lp pumped sol~_d-state laser device using the semiconductor laser device described above.
In order to achieve the objects described above, according to this invention, there is provided a semiconductor laser device chaxacterixed by comprising a stack array laser diode including a plurality of thin emitters aligned along the long axis thereof two-dirnensionally for radiating laser beams, a first collimator for parallelizing (collimating) the laser beams radiated from each emitter or an emitter group including a plurality of the emitters, slong the direction perpendicular to the long axis of the emitters for each stack layer, a first beam converter for converting the laser beams parallelized in one direction into laser beams turned substantially at right angles to the long axis of one or the plurality of the emittezs and outputting trio laser beams parallelized in laddez form for each layer, a beam compressor for shortening the intervals of the ladder steps of the laser beams parallelized in ladder form and thus converting the laser beams into those compressed for each layer, a second beam converter far turning each compressed laser beam group substantially at right angles to the long axis thereof and outputting by converting all the laser beams into those aligned in paxallel in the form o~ one ladder, a second collimator for parallelizing the laser beams 7 _ output from the second beam converter in the direction corresponding to the long axis of the emitters, and a focusing element for focusing the lessor beams parallelized in the rwo directions 3t a focal point.
In order to aCh.ieve the objects described above, the first beam converter according to this invention is characterized in that a plurality of optical elements for receiving zhe light beams radiated in the form of slits from a light source and emitting while turning the slits l0 substantially at right angles along the optical axis in the cross section of the light beams, and the plurality of the optical elements are arranged in a two-dimensional array with the light-receiving surface and the light-emitting surface of each optical element adjoining each other at positions corresponding to tb.e radiation surface of the stack array laser diode.
Specifically, the beam converter according to the invention is so configured that the direction of the laser beams radiated from each linear emitter or each linear emitter group of a stack array semiconductor laser is turned substantially at right angles along the optical 8X15.
in order to achieve the objects described above, the beam Compressor according to this invention is so configured that a plurality of columns of parallel laser beams radiated in the form of slits at large intervals axe received and converted into columns of aligned parallel laser beams compressed into the form of closer parallel slits.
In order to achieve the objects described above, the second beam converter according to the invention is characterized in that the parallel laser beams campressed into the form of close aligned slits at smaller intervals and radiated from the beam compressor are received and turned in the direction substantially at right angles along the optical axis in the cross section of the compressed laser beams by a plurality of optical _ 8 -. ' elements, which are linearly arranged with trie light-receiving surface and the light-emittj_ng surface thereof arranged adjacently to each other in correspondence with the radiation surface of the beam compressor.
Specifically, the laser beaxris radiated from one or a plurality of linear emitters of a stack array semiconductor laser through the first beam converter, the beam compressor and the second beam converter are turned twine each substantially at right angles along the optical axis in the d,ix'ection corresponding to the slits, and thus converted ~.nto laser beams in which all the emitters or aLl the emitter groups are converted into a single coluztln of parallel emitters.
In order to achieve still another object of the invention described above, the LD pumped solid-state laser device according to the invention h.as an end sur:~ace by way of which the exciting light beams of the solid-state laser device are incident at the focal point of the laser beams output from the semiconductor laser device.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a diagram for explaining a stack array laser diode and the directivity of the laser beam.
Fig. 2 is a plane view showing a semiconductor laser z5 device according to this invention.
Fig. 3 is an elevatlox~. of the semiconductor laser device shown in Fig. 2.
Fig. 4 is a plaz~eview of the s8miconductor laser device according to the invention using a fourth condenser between the first beam converter and the bedm compressOr-Fi,g. 5 is an elevation o~ the semiconductor laser device shown in Fig. 4.
fig. 6 is a planeview of a semiconductor laser device using a semiconductor laser of a dense emitter stxucture_ Fig. 7 is an elevation of the semiconductor laser . ~ _ g _ ~ device shown in Fig. 6.
Fig. 8 is a planeview of a semiconductor laser device using an optical fiber according to the invention.
Fig. 9 is an elevation of the semiconductor laser device shcawn in Fig _ 8 .
Fig_ 10 is a block diagram for explaining a first beam Converter, a beam compressor and a second beam converter according to the invention.
Fig. 11 is a diagram for explaining the principle of J.0 beam conversion by three reflections, with reference zo three rectangular prisms.
Fig. 12 is a perspective view showing an optical element in the shape of an oblique prism and the beam conversion using the optical element.
Fig. 13 is a perspective view showing a beam converter obtained by arranging the optical elements of Fig. 12 arranged in parallel and the beam canversion by the beam converter.
Fig. 14 is a perspective view showing an integrated beam converter equivalent to the beam converter shown in Fig. 13, and the beam conversion by the same beam converter_ Fig_ 15 is a perspective view of a first beam converter obtained by stacking the beam converter shown in Fig. 14 and the beam conversion by the same beam converter.
Fig. 16 is a perspective view showing a first beam converter obtained by stacking mirror arrays anal the beam conversion by the same beam converter_ Fig. 17 is a perspective view showing a first beam converter with cylindrical lenses arranged in parallel and the beam conversion by the same converter.
Fig. 18 is a perspective view snowing a first beam converter including parallel optical elements having an incident surface and exit Surface with cylindrical surfaces, and the beam conversion by the same converter.
Fig. 19 is a perspective view showing a first beam _ 10 _ ' converter fabricated of block of optical glass, and the beam conversion by t~.e same converter.
Fig. 20 is a perspective view showing a first beam converter with dave prisms arranged in parallel, and the beam cvnversiota. by the same converter.
Fig. 21 is a perspective view showing a first beam converter with binary optics arranged in parallel, and the beam conversion by the same converter.
Fig. 22 is a per9pective view showing a first beam converter with one-dimensional graded index lenses arranged in parallel, and the beam convez~sion by the same converter.
Fig. 23 is a perspective view showing a first beam converter with truncated cylindrical graded index lens elements arranged in parallel. and the beam conversion by the same converter.
Fig. 24 is a perspective view showing a beam compressor formed of an anamorphic prism, and the beam compression by the same compressor.
Fig. 25 is a plan view shocaing the beam compressor of Fig. 24 and the beam compression by the same Compressor_ Fig_ 26 is a perspective view showing a beam Compressor including an anamorphic prism pair having two anamorphic prisms, and the beam compression by the same compressor.
Fig. 27 is a planeview showing the beam compressor of Fig. 26 and the beam compression by the same compressor.
Fig. 2s is a perspective view showing a second beam converter obtained by arranging optical elements in th~
shape of an oblique prism arranged in parallel, and the besm conversion by the Same beam converter.
Fig. 29 is a perspective view showing an integrated second beam Converter equivalent to the beam converter shown in Fig. 28, and the beam conversion by the same converter.

Fig. 30 is a perspective view showing a eecond beam converter with mirror elements .arranged in parallel, and the beam conversio~a by the same converter.
Fig. 31 is a perspective view showing a second beam S convez~ter with cylindrical lenses arranged in parallel, and the beam conversion by tha same converter.
,Fig_ 3Z is a perspective view showing a second beaztt converter with parallel optical elements having the plane of incidence and the exit plane with cylindrical 7.0 surfaces, and the beam conversion by Zhe same converter.
Fig. 33 is a perspective view showing a second beam converter fabricated of block of optical glass, and the beam conversion by the same converter.
Fig. 34 is a perspective view snowing a second beam 15 converter with dove prisms arranged in parallel, and the beam conversion by the same converter.
Fig. 35 is a perspective view showing a second beam converter with binary optics arranged in parallel, and the beam conversion by the same converter.
20 Fig. 36 is a perspective view showing a second beam converter with one-dimensional graded index lens elements arxanged in parallel, and the beam conversion b~. the same converter.
Fig_ 37 is a perspective view showing a second beam 25 converter with truncated cylindrical graded index lens elements arranged in parallel, and the beam conversion by the same converter.
Fig. 38 is a planeview of the block diagram for explaining the LD pumped solid-state laser device 30 according to the invention.
Fig. 39 is an elevation of the block diagram used for explaining the LD pumped Solid-state laser device chown in Fig. 38.
Fig. 40 is a planwiew of the block diagram for 35 explaining the optical fiber-led light LD pumped solid-state laser device according to the invention.
Fig. 41 is an elevation of the block diagram for ' - 12 -explaining the optical fiber-led LD p~xmped solid-state laser device.
BES'Z' MODE FOR CARRYING OUT THE INVEIJTION
This invention will be explained in detail below with reference to the accompanying drawings.
Fig. 3 is a plan view of a semiconductor laser device according to the invention, and Fig. 3 an elevation thereof.
1~ stack arrsy semiconductor laser 10 includes a plurality of linear array semiconductor' lasers staexed (in four layers in the drawing) to the height of 5 mrn to 40 mm, each linear array semiconductor laser having laser-radiating l0 zo 100 (only six are shown in the drawings for conveni,ence~ sake) activq layer stripes 12 which are aligned over the width of about 10 mm.
Each active layer stripe 12 is 100 ~m to 200 ~,ztt wide and 0_1 ~m to 1 ~m thick, for example. The laser beams are radiated from an end surface of each active layer stripe at a radiation angle of 40 to 50 degrees along the thickness and 10 degrees along the ~~idth, thereby providing a light source of the stack array semiconductor laser 10. The act5_ve layer stripos are arranged in alignment at the end portion of the linear array semiconductors, and therefore the stack array semiconductor laser provides a light source with line segments aligned in a two-dimensional array.
A first cylindrical lens array 20 has the ability to converge the laser beams emitted from the stack array semiconductor laser 10, along the thickness of the active layer stripes and parallelize the light components dispersed in the direction perpendicular to the active layAr stripes. The first cylindrical lens array 20 has an equal thickness along the ~,ridth thereof, so that the laser beams proceed there through supstaDtially linearly and therefore, the radiation angle o~ the laser beams along the width remains almost the same at about 10 degrees.
A first beam Converter 3o so operates that the cross section of the laser beams output from the first cylindrical lens array 20 is rotated by about 90 degrees with xespect to the incident light. The first begm converter 3o includes a plurality of optical elements arranged in a two-dimensional array in one-to-one correspondence with the active layer stripes 12 of the stack array semiconductor laser 10.
1o The laser beams which are dispersed at an angle of about 10 degrees along the width and parallelized along the thickness by the first cylindrical lens array 20 (Fig. 3) are rotated by about 90 degrees, for each active layer stxipe, by the First beam converter 30, and thus converted into laser beams having the radiation angle of about 10 degrees along the thickness and parallal along the width (rig. 2). Alternatively, the optical elements may each corzespond to a stripe group including a plurality of active layer stripes.
The laser beans converted by being rotated by about 9o degrees are arranged in parallel in the same number as the active layer stripes or the active layer stripe groups, as the case may be. Therefore, the light beams radiated from the stack array semiconductor laser 10 are z5 arranged substantially in the same ~r~anner as if the active layer stripes sre arranged in parallel like a ladder and a plurality of the ladders each having parallel ladder steps are further arranged its parallel two-dimensionally.
The beam compressor 40 compresses the laser beams by shortening the intervals between the ladder steps of the parallel laser beams. The laser beams thus compressed are further aligned along the height of the stack array semiconductor laser.
The cross sections of the compressed laser beams output From t)'~e beam cr~mpressor 40 are collectively rotated by about 90 degrees with respect to the incident - z4 -' light by the second beam converter 50. The second besm converter 50 includes a plurality of optical elements aligned along the height of the stack array semiconductor laser in one-to-one correspondence with the compressed laser bea.~ms from the compression optical system 40.
,~,s a result, the las~r beams of all the laser beam groups emitted from the active layer stripes come to make up a group of parallel laser beams in alignment. Each of the parallel Laser beams in alignment, as described above, may alternatively correspond to a group of stripes including a plurality of active layer stripes instead of a single stripe.
A second cylindrical lens 60 is arranged in parallel to the height of the stack array semiconductor laser.
The laser beams radiated from the stack array semiconductor laser 10 and passed through the cylindrical lens array 20, the first beam converter 30, the beam com8ressor 40 and the second beam converter 50 have, for each active layer stripe, a parallel component perpendicular to the active layer stripes and have a radiation angle of 10 degrees along the width of the active layer stripes. In view of this arrangement of the parallel laser beams, the Laser beams have a radiation angle of about 10 degrees, as a whole, along the z5 direction parallel to the active layers of the semiconductor laser. The second cylindrical lens 60 receives these laser beams and psrallelizes them along the width. Thus, the laser be~xms become parallel in two directions.
The laser beams now completely parallelized through the second columnar lens are focused at a small beam spot by a focusing lens 70. Let fl be the focal length of the first cylindrical lens 20. f3 the focal lAngth of the second cylindrical lens 60, fZ the focal length of the focusing Ions 70, ca0 the width of each active layer stripe and do the thickness thereof. The width wl and . ' - 15 ' the thickness dl of the beam spot of the lager from each active layer stripe are determined as follows:
dl = d0~f2/fl .
w1 = w0~f21f3 To obtain a sharp spot, therefore, the larger the values fl and f3, the better. When considering that r,~0 is 100 ~m to 200 ~,m and d0 is 0.1 ~"~m to 1 Vim, the magnitude of fl, as compared with. f3, is out of the question. In the case where w0 is 200 ~.m, the spacing at wb.ich the stripes are arranged is 800 ~,m, the radiation angle along the lung axis of the active layer stripes is 10 degrees and the spacing at which the stack layers are arranged is 4 mm, for example, the laser beams from adjacent stripes are superposed along each long axis at the distance og 3.9:znm from the end surface of the stripes from which. the laser beams are Amitted.
If the ouLpuz energy is to be efficiently used without resorting to this invAntion, therefore, both the first and second cylindrical lenses are zequired to be arranged at the distance of not more than 3.4 mm from the stripe surface. For the las~r beams to be parallelized, therefore, both f1 and f3 are required to be 3.4 mm at most.
Assume that the first cylindrical lens having a proper value of f1 smaller than 3.4 mm and the first beam converter are placed at the distance of not larger than 3.4 mm from the end surface of the stripes from which tk~.e laser beams are emitted, and the lasex beams are rotated by the first beam converter. Then, the laser beams are paralleliaed and not superposed with each other along the direction parallel to the ~unetion.
Instead, the lasex beams come to expand at an angle of about 10 degrees iz~. th.e direction perpendicular to the active layers. As a result, the laser beams of adjacent stack layers axe superposed at the position on the light , -- 16 -' path 21.7 mm froze the stripe surface. In view of this, assume that the beam compressor and the second beam convertez are placqd at the position of not more than 21.7 mm and the laser beams are rotated by the second beam converter. Then, the laser beams become parallel and are not superposed with each other in the direction.
perpendicular to the junction. The laser beams thus come to expand at an angle of about 10 degrees in the direction parallel to the junction.
I0 In order to convert this radiated light into parallel light beams by the second cylindrical lens, the focal length f3 is required to be sufficiently largo.
specifically, an appropriate value f3 including but not limited to 3.4 mm ox 2~..7 mm can be selected. In the case where the same value as the focal length f2 of the focusing lens is selected, for example, the width, w1 of the beam spot is given as 200 ~,m.
In this way, with the laser d.ev~ice according to this invention, the width a.~l and the thickness dl of the beam spat can be reduced to a sufficiently small value, so that a high intensity laser can be produced in which the output of the linear array lasex diode is efficiently utilized. The laser device according to the invs~ntion, therefore, can find applications in the laser beam machining or the medical fields as a laser surgical knife.
Fig. 4 is a plan view snowing a semiconductor laser device according to the ,invention in which a second cylindrical lens array is inserted between the first beam converter and the beam compressor, and Fig. 5 is an eievation thereof. The second cylindrical lens array 80 has a focusing power in the direction parallel to the junction, and a eomple~ optical system combined with the cylindrical lens fi0 parallelizes the laser beams radzated from the stack array Semiconductor laser 10 and dispersed along the width of the active layer stripes. By _ 17 inserting the second cylindrical lens array, the light path from th.e stripe suxface to the position where the adjacent stack layers arA superposed can be lengthened.
Thus, the beam compressor can be arranged in a space having a sufficient margin.
This cylindrical lens array 80 is inserted for the sole puxpose of securing a margin of the interval between the first beam converter and the beam compressor, and not intended to collimate the laser beams by correcting the dispersion angle in the dirsrtivn along the act~.ve layer stripe array. This is due to the fact that, as described above, the focusing diameter w1 in this direction is in~rersely proportional to the focal length f3 of tb.e cylindrical lens (the composite focal length of the lenses 60 and 80 in this case). and therefore the value f3 is desirably as large as possible.
Even in the case where the cylindrical lens array 80 is inserted, therefore, it is still preferable to install the cyliz~dx'ical lens 60 _ ~'ig_ 6 is a plan view of a semiconductor laser device according to the invention ir_ which a quasi-cont,inuous wave laser diode (Quasi-Cw-LD) or the like haviri.g the light emitting portion of a high spgtigl density is used as a stack axray laser diode. Fig. 7 is an elevation of this semiconductor laser device. The stack array laser diode 10 has a multiplicity of active layer stripes in high density thereby tQ form a substantially inseparable linear light emitting portion.
The first beam converter 30 includes an appropriate number of aligned optical elements of a size corresponding to a predetermined number of stripes without regard to the sine of the act~,ve layer stripes.
The position and the operation of the first cylindrical lens array 20, the first beam converter 30, the beam compressor 40, the second beam converter 50, the second cylindrical lens 60 dx~d the focusing lens 70 are identical Lo those explained with reference to Figs. 2 and 3.
Zz~ the case rahere a laser diod~a having the active layer stripes of a small width or a short interval is used as described above, the fabrication of the beam converter becomes difficult if the optical elements of the first beam converter are arranged in one-to-one correspondence with the active layer Stripes. According to this embodiment, each optical element is arranged in correspondence with an active layer stripe group having an appropriate number of active layer stripes. Also, the light emitting portion of the laser diode is regarded as one stripe instead of a dotted line anal appropriately divided and turned by the optical elements. In this way, the laser diode is substantially considered to have been modified to the. one which emits the light in ladder form.
Fig. 8 is a plan view of a laser device according to the invention using an optical fiber 90, and Fig. 9 an elevation thereof. The light-receiving surface of the optical fiber 90 is arranged at the position of the laser spot formed by the laser device, and the laser energy emitted from the laser 10 is received and transferred to the other end surface of the optical fiber 90.
The length and flexibility of the optical fiber 90 makes possible a convenient laser device which can be operated with the light emitting portion thereof easily located at a target point. The efficiency of 60 3 is achieved by a laser device, for example, so congiguxed that the stack array laser diode 10 having an output of 800 W is used as a light source, and a laser spot smaller than the cross section of the core 400 ~m in diameter of the optical fiber 90 is formed on the plane of incidence of the optical fiber.
Fig. 10 is a block diagram for expldi~ing an optical system including the first beam converter 30, the beam compressor 40 and the second beam converter 50 according to the invention. The first beam converter 30, as shown in Fig. 10, is formed by coupling an appropriate number - 19 _ of optical elements 32 in a two-dimensional array. The width and height of tb.e first beam converter correspond to the light emitting surface of the stack array laser diode.
The optical elements 32 each have a light-receiving surface, in the direction perpendiculgr to the surface, the laser beam 36 with the axial direction of the active layer stripe along the width of the first beam converter, and an output surface, in the direction perpendicular to 1o the surface, the laser beam 37 with the light path thereof converted by being twisted along the optical axis in the optical element. Each optical element 32 xeCeives the laser beam 36 having the lung axis o~ the Stripes parallel to the radiation from the active layer stripes axranged at repetitive intervals of 800 hum and turns the cross section of the laser beam by about 90 degrees thereby to convert the stripe axzs of the laser beam into vertical direction.
The optical elements 32 used for the first beam converter 30 are ger7.erally arranged in one-to-one correspondence with the active layer stripes 12 of the stack array laser diode 10 used witk: the laser device having the first beam converter built therein. In the case of using a stack array laser diode including a stack of fouz layers, with 4 mm intervals, of 12 active layer stripes arranged at repetitive intervals of 800 ~,m, therefore, the first beam converter is so configured that 12 optical elements are arranged at repetitive intervals of 800 ~,m and four layers of 12 optical elements axe stacked at ,intervals of_ 4 znm.
In the case where a plurality of activs layer stripes are afran.ged in high density as shown in the example of Eig. s, however, the lassr beams are regarded to be radiated from a single continuous stripe, and the laser beams received by the first beam converter are divided into portions at appropriate intervals. Thus, d - - to -each column of the laser beams is turned by about 90 degrees, thereby providing a linear array laser diode having a laddex-shaped emitting portion having substantially the same width as the interval of the ladder steps_ Further, these linear array laser diodes may be stacked into and regarded a9 a stack array laser diode_ This purpose can be achieved by arranging an appropriate number of optical elements two-dimensionally in parallel without regard to the number of the active layer stripes.
The laser device is structured so conveniently chat the plane of incidence and the exit plane of the fixst beam converter 30 are arranged on a single plane over the entire first beam converter in keeping with the fact that the radiation surface of the stack array laser diode is flat.
The apLical elements can be formed based on various principles as disclosed in US Patent Serial No.
5,513,201.
First, the optical elements are formed based on the twist by three reflections. This ccn be easily understood by inferring three rectar_gular prisms.
Specifically, as shaven in Fig. 11, three rectangular prisms are combined. when a horizor_tally flat laser beam z5 is applied to the first rectangular prism, a vertically flat laser bgarn twisted by 90 degrees is formed by the three total reflections in the first, second and third prisms, and exits from the third rectangular prism. The same functions as the thxee rectangular prisms can be exhibited by a single prism element shown in Fig. 12.
These prism elements are arranged in. a one-dimensional prism array as shown in dig. 13. Then, laser besms aligned as dashed line segments enter tha prism array and exits by being converted into laser beams arranged in parallel in the form of ladder. This pxism array can be formed from a single glass substrate in monolithic fashion as shown in Fig. 14. These prism 21 _ arrays are verti,caJ_J_y stacked to form a two-dimensional array of pz'ism elements as shown in Fig. 15. In this way, the laser beams in the form of parallel dashed line segments are converted into and exit as laser beams in the form of parallel ladders.
The three reflections are not necessarily at right angles as in the rectangular prism, but such that the laser beams in the form of parallel dashed line segz~ents are incident and exit by being converted into laser beams in the form of parallel ladders.
The optical elements used on the reflection surface may not be prisms but reflectors appropriately arranged.
In the case where a beam converter is formed of reflectors, a mirrox' array is formed in such a mann~r that all the total reflection surfaces of the prism array are regarded as a reflection surface. The materials that can be used for the beam converter include metal, glass plated with metal, glass with reflecting coating, plastics and silicon. A fine optical element can be fabricated by application of the fabrication process using a precision die, the LzGA process or the silicon semiconductor fabrication process. In the case where silicon crystal is used, the machining is facilitated by making the reflector surface of a cleavage plane.
z5 The use of a one-dimensional mirror array makes it possible to convert the incident laser beams in the form of aligned dashed line segments into laser beams wl~icl~a exit as parallel laser beams ire the form Of ladder.
These mirror arrays are stacked vertically to form a two dimensional array of mirror elements as shown in Fig. 16.
Then, the laser beams i.s~ the form of parallel dashed line segments enr.er anal exit by being converted into laser beams in the form parallel ladders.
Fig. 17 is a diagram showing the first beam converter having cylindrical lenses arranged in parallel.
In this first beam converter, the cylindrical lenses are arranged in parallel to each other with the axes thereof , _ 22 _ inclined by 45 degrees, and arranged in appropriately spaced opposed relation with each other. The flat light beams entering the plane of incidence horizontally are subjected to different refracting power at different entrance points by the cylindrical lenses inclined by 45 degrees, thereby turning the flat axes thereof. Further, the laser beams with the flat ages of the cylindrical lenses inclined by 45 degrees exit from the exit plane with the flat axes turned by about 90 degrees.
The use of the first beam Converter changes the striped light beams f7COZt1 the stack array laser diode substantially to an arrangement in the form of parallel ladders. In the case where the arrangement of the cylindrical lenses inclined by d5 degrees fails to match w~.th the arrangement of the stripes of an adjacent linear array LD layer, thq cylindrical lens array is displaced by being divided into areas corresponding to the linear array LD layer to attain the matching with the stripes.
Fig. 18 shows the first beam converter including a plurality of mutually-coupled optical elements of optical glass having cylindrical planes of incidence and exit planes and parallel side surfaces with a solid intexior.
This optical element is also a sort of cylindrical lex~s~
The optical elements are inclined by 45 degrees fronn t~.e horizontal surface. As the flat licht beams enteziz~g the plane of incidence horiaontally, the flat axes thereof are turned under different refracting power generated by the cylindrical planes of ineid.e~n.ee inclined by 45 degrees. Further, the laser beams leave the exit planes 3o with the slat axes turned by 9o degrees by the cylindrf,cal exit planes inclined by 45 degrees. 3.~s the result of using the first beam converter, the striped light beams from the stack array laser diode are changed substantially to an arrangement of ladders in parallel.
in the case matching with the intervals of the striped light beams, the side surface are not necessarily parallel, axxd a cylindrical lens having a round section _ 23 _ can also be used. In the case where the arrangement of the cylindrical lenses inclined by 45 degrees fails o match the arrangement of stripes in the adjacent linear array LD layer, as in the foregoing case, the cylindrical S lens array is cut into areas displaced to correspond to the lin~ar array LD layer to attain the matching with the stripes.
Fig. 19 shows the first beam converter fabricated from a block of optical glass. This beam converter has a plurality of c~rlindrical surfaces ,~ncli~7,ed by 95 degrees in the same direction on the incidence plane and the exit plane of the optical glass having a rectangular cross section, and has Lne same functions as the beam converter shown in Fig. 18_ In the ease where the arrangement of the cylindrical surfaces inclined by A,5 degrees fails to match with the stripes of the adjacent linear array LD
layer, the cylindrical surface array is cut into areas displaced to correspond to the linear array LD layer and match the stripes.
Fig. 20 showw the first beam con~rrerter having a plurality of dove prisms. The optical elements are inclined by 45 degrees to the horizontal surface. The flat laser beams entering the incidence plane horizontall~t are reflected at different points on the bottom surface depending on the incidence point, and therefore form vertical flat light beams exiting from the exit plane. Thus, the laser beams exir.s with. the flat axis thereof turned by about 90 degrees. sy use of the first beam converter, th.e striped light beams from the stack array laser diode are changed substantially to an arrangement of parallel ladders. In the case of jointing the adjacent dove prisms, the bottom surface of the dove p7Cism is preferably subjected to the reflection coating as required.
The beam converter may uss optical elements which utilize diffraction. Fig. 21 is a disgram showing an optical element using the binary optics. This optical element is Configured of a transpgrent plate formed with a mul't.1p11C1ty of stepped grooves of vsrying depths symmetric about and in the direction perpendicular to the center axis inclined by 45 degrees diagonally on the transparent plate. The depth of each groove is changed iz~ such a mannex as to increase the diffraction angle progressively outward of the center util~.z~,z~g the diffraction. The stepped surface of the exit plane is formed in symmetry with respect to the stepped surface of the plane of incidence_ The parallel flat laser beams entering the plane of incidence have the flat axes thereof turned under the Affect of different refracting power at different incidence points on the stepped surface with the center axis inclined by 45 degrees. The laser beams leave the stepped surface of the exit plane with flat axes similarly inclined by 45 degrees. In this way, the laser beams leave the exit plane after being turned by a total of 90 degrees. This binary optics device is formed of optical glass or plastics, and may alternatively be fabricated also by use of a die as well as by the sem~.conductox fabrication process.
~'ig. 22 shows the first beam converter including a plurality of znutua~.ly-coupled oz~e-d~,mensional, graded index lenses of optical glass ztlaterial of which the refractive index is highest on the centez surface and decreases toward the side surface. The one-dimensional graded index lens is inclined by a5 degrees to the horizontal surface. The flat laser beams entering the plane of incidence horizontally haves they flat axes thereof turned by about 90 degrees under the refracting power progressively greater toward the center surface and inclinod by 45 degrees, and then leave the exit surface.
Fig. 23 shows the first beam converter including a pluralitx of pairs of sernicylindrical graded index lens elements arranged in opposed relation with cach other in the same direction on the two sides of an optical glass plate. The center axis of each semicylindrical lens . . _ 25 element is inclined by 45 degrees to the horiaantal surface. The refractive index is highest at the center of the semicircle and deer~ases outward. The two surfaces of the optical glass plate make up the plane of incidence and the exit plane. The flat light beams incident in paxallel to the plane of incidence is subjected to different refracting power at different incidence points by the graded index lens elements inclined by 45 degrees, and are emitted from the exit plane with the flat axes thereof turned by about 90 degrees.
Fig. 24 is a perspective view showing a beam compressor using an anamorphic prism, and Fig. 25 a plan view thereof. Parallel light beams having a predetermined interval which enter the anamorphic prism are converted into narrower interva_ beams by the refraction effect and exit from the anamorphic prism.
As shown in tha perspective view of Fig. 26 and the plan view of Fig. 27, another anamorphic prism is added to make an anamorphic prism pair. Due to two refraction effects, the interval of the beams ~s further reduced.
Moreover, the axes of the exit beams move in parallel with the axes of the incident beams while the directions thereof remain unchanged..
A plurality of the two-dimensionally arranged laser beams emitted from zhe first beam converter as parallel laser beam columns in the form of paxallel laddezs axe compressed by an anamorphiC prism, whereby each laser beam column is compressed and converted into another laser beam column with shorter intervals of ladder steps.
As a xesult, these compressed laser beam columns are converted into an array of columns_ Further, assume that anothar anamorphic prism pair is prepared to use a total of four anamorphic prisms.
Then, the exit light axes can be plac~d at a position suhstantially forward of the incident light axes. Of course, a single anamorphic prism may be used as long as the change in the direction of the optical axes is not undesirable.
The second beam converter S0, as shown in Fig. 10, is formed by connecting as many optical elements 52 as the stack layers of the stack array laser diode in a one-dimensional array. The opticsl elements 52 used far the second beam converter 50 corresponds in one-to-one relation with the compressed laser beam columns emitted from the beam compressor 40. The optical elements 52 twist the laser beams by 90 degrees vn the same principle as the optical elements 32 used for the first beam Converter 30. Thus, the ~.asex beam groups formed by aligning the compressed parallel laser beam columns exit from the beam compressor and enters the second beam converter. The compressed parallel laser beam columns are twistAd by 90 dAgrees, with the result that all the laser beam elements are aligned in a single parallel arrangement.
The optical elements can be formed based on the various principles used fox the first beam converter.
The first principle is to twist the beams through three reflections. As shown in Fig. 28, prism elements are arranged in vne-dimensional array, in which the vertical flat laser beam columns arranged horizontally in parallel enter and exit as flat laser beam columns aligned vertically. In this way, the compressed parallel laser beams in the form of aligned parallel laser beam columns enter and all the laser beam elements exit bx being converted into a single parallel alignment. This one-dimensional array can also be formed in monolithic fashion from a siz~.gle gJ_d.SS substrate as Sh.4wn In F~.g.
29.
The three reflections are not necessarily at right angles as in the rectangular prism. As in the case of the first beam converter, the purpose is served if the compressed parallel laser beam columns which are aligned enter so that all the laser beam elements are converted into a parallel alignm~nt.
Also, the optical elements of which the reflection surfaces are used are not necessarily prisms but may be reflectors appropriately arranged.
As shown in Fig. 30, mirror clernents are arranged in one-dimensional array in such a manner that the horizontally flat laser beams are twisted by 90 degrees through three reflections and converted into and exit as a vertical parallel arrangement. In this way, the to compressed parallel laser beam Columns aligned enter and exit by being converted into a single alzgnznent of all the laser beam elements in parallel.
Fig. 31 is a diagram showing a second beam converter with cylindrical lenses arranged in parallel. In this beam converter, the cylindrical lens~as with the axes thereof inclined by 45 degrees are arranged in parallel in appropriately spaced opposed xelation with each other.
The compressed parallel laser beam columns entering in parallel to the plane o~ incidence have the cross ZO section thereof turned under the effect of different refracting power at different incidence points by the cylindrical lenses inclined by 45 degrees. Further, the cx'oss section of each beam of the beam columns is turned by the cylindrical lenses which are turned by 45 degrees z5 from the e~cit pJ.ane. Thus, the beam columns with the cross section turned by a total of about 9o degrees exit by way of th.e exit plane.
x,s the result of using the second beam converter, the parallel laser beam columns compressed by the beam 30 compressor and aligned are converted into a form in which all the laser beams are aligned substantially in parallel like a ladd8r. In the process, the intervals of all the ladder steps need not be the same.
Fig. 32 shows a beam converter including a plurality 35 of mutually-coupled optical elements of optical glass.
In these optical elements, the plane of incidence and the exit, plane have a cylindrical surface, and the side surfaces are parallel with a solid interior. The optical elements are inclined by 45 degrees to the horizontal surface. The compressed parallel laser beam columns entering in parallel to the plane of incidence have the S cress section thereof turned under cifferent refracting power generated on the cylindrical surface of the plane of incidence inclined by 45 degrees. Further. the cross section of the beam columns is turned by the cylindrical surface of zhe exit plane inclined by 45 degrees. In this way, the laser beams turned by a total of about 90 degrAcs exit from the exit plane_ By the use of the second beam converter, the parallel laser beam columns compressed by the beam compressor are aligned. Thus, substantially all the laser beams are converted into a single parallel arrangement in ladder form. In the process, the intervals of all the ladder steps need not be equal. As long as the intervals between the adjacent compressed parallel laser beam columns are matched, the side surfaces need not be parallel. Thus, a cylindrical lens with a round cross section can be also used.
F~,g. 33 shows a second beam converter fabricated froze an optical glass block. In this beam converter, a plural.~.ty of cylindrical surfaces inclined by 45 degrees in the same direction are formed on the plane of incidence and Lhe exit plane of optical glass having a rectangular cross section. This beam converter has the same functions as the beam converter shoc,~n in Fig. 32.
Fig. 34 shows a second beam converter utilising dove prisms. The compressed parallel laser beam columns entering the plane of incidence horizontally are refracted by the plane of incidence of the dove prisms inclined by 45 degrees, and reflected at different positions on the bottom surface due to the different points of incidence. The laser beam columns are refracted and exit from the exit plane, therefore, with the cross section thereof turned by about 90 degrees. In _ 29 _ the case where ad3aeent dove prisms are coupled to egch other, the bottom surface of the dove prisms may be reflection coated as required.
Fig. 35 shows a second beam converter utilizing the binary optics, In this beam converter, a plurality of stepped surfaces with the center axis inclined by 45 degrees in the same direction are formed on the plane of incidence and the exit plane. The compressed parallel laser beam columns entering by way of the plane of incidence horizontally are tu7rned undex the effect of d~.ffexent refracting power generated on the stepped surface of the plane of incidence inclined by a5 degrees, and after being again turned by the stepped surface of the exit plane inclined by 45 degrees, exit from the exit surface With the cross sections thereof turned by 90 degrees.
Fig, 36 shows a second beam converter using one-dimensional graded index lenses. This beam convertcr comprises a plurality of one-dimensional graded index lenses of an optical glass material coupled to each other at 45 degrees, in each of which the refractive index is highest at the central surface and becomes lower, the closer to the side surface. The compressed parallel laser beam columns entering the plane of incidence horizontally are turned under the effect of different refracting power at different points of incidence in the one-dimensional graded index lenses inclzned. by 45 deg7Cees, and exi2~ from the exit plane with the cross section thereof turned by 90 degrees.
gig. 37 shows a second beam converter using graded index lens elements arranged in opposed relation to each other. This beam converter comprises a plurality of pairs of subs~tanti~ally sc_amicylindrical graded index lens elements arranged in opposed relation with each ether are formed in the same direction on the two surfaces of an optical glass plate. The center axis of each semicylinder is inclined by 45 degrees with respect to the horizontal surface, in such a manner that the refraetiva index is highest at the center of the semicircle and decreases outward. The compressed parallel laser beam columns entering the plane of incidence horiaontally are turned under the effect of different refracting power at different points of incidence by the graded index lens elements inclined by 45 degrees, and exit by way of the exit plane With the cross section thereof turned by 90 aegrees.
Fig. 38 is planeview of the block diagram for explaining a LD pumped solid-state laser device according to the invention, and Fig. 39 is an elevation thereof.
The LD pumped solid-state laser device us~as the semiconductor laser device according to the invention as an exciting light sourcA of the solid-stata laser 95. In the conventional semiconductor laser device using the stack array laser diode, the energy concentrated by an optical system is imparted in a relatively large elongated area, and therefore the substantial energy density is not large. Also, an attempt to use this energy efficiently fails to excite other than from the side surfaces of the solid-state laser medium.
In the LD pumped solid-state laser device according to this invention, the dotted Iight emitting stripes of Z5 the stack array laser diode 10 axe collimated in the direction perpendicular to the stxipes by a first cylindrical lens array 20 having the short focal length fl. Aftex that, a plurality of the beam columns are converted info a plurality of ladder-shaped columns of laser beams by use of the first beam converter 30, and each beam column is compressed by the beam compressor 40.
Also, each. beam column is turned by the second beam converter 50, sa that the laser beam columns are converted into a form in which all the beams are aligned in parallel arrangement. Next, the ladder-shaped laser beam columns are collimated in horizontal direction by the second cylindrical lens 60 having the long focal ' - 31 -length f3, and then energy is converged in a small area on the light receiving surface of a solid-state laser rnadium element 96 by a focusing lens 70.
With the semiconductor laser device according to this invention, as described above, energy can be concentrated in a predetermined narrow area by use of different focusing poorer in vertical direction fZ/f1 and horizontal direction f2/f3. The LD pumped solid-state laser device according zo the invention utilizing the semiconductor lasex device according to the invention, thexefoxe, can make tk~.e best use of the output of the stack array laser diode 10 on the one hand and cara excite the end surface of the solid-state laser 95 at the same time_ In addition to the normal solid-state laser rn~dia such as YAG and YLF, the optical element9 including the wavelength conversion element or the Q switching element can be also used.
Also, the exciting light source may enter the solid laser medium at the Brewster angle. The solid-state laser medium may be a short-absorption length laser material such as YV04. The LD pumped solid-state laser device according to the invention makes it possible to produce the YAG laser output of 100 W using the semiconductor laser power of 300 w.
dig. 40 is a plan view of the block diagram for e~cpl,a3.n~.ng az7. optical fiber-led LD pumped solid-state laser device according to the invention, and Fig. a1 is an elevation thereof_ The optical fiber-led LD pumped solid-laser laser device conducts the output of the semiconductor laser dAVice according to the invention by an optical fiber 90 to make up an exciting light source for the solid-state laser 95. Ths output ~aortion of the optical fiber has an optical system 92 for collimating and refocusing the energy of the laser beam radiated from 'the end poxtion.
As described above, the interposition of the ' - 32 -flexible optical fiber between the semiconductor laser device portion and the solid.-state laser device portion leads to the advantage of a remarkably increased freedom of the device and facilitates the configuration. The optical fiber-led LD pumped solid-state laser device according to the invention can produce a YAG laser output of 80 w using a semiconductor laser power of 4o0 w.
INDUSTRIAL APPLICABILITY
The semiconductor laser device according to this invention can concentrate the laser energy generated by a stack array laser diode in a vex'y small area, and therefore finds satisfactory applications in the fields o~ laser ~mac~.ining and m2dieine_ Also, the semiconductor laser device wnicn has produced the effect of arranging I5 the emitters of the stack array semiconductor laser substantially in the form of a single ladder-like column using the beam converter according to the invention can concentrate the energy of the stack array semiconductor laser at a very small focal point. Further, the LD
pumped solid-state laser device according to the invention makes possible the end surface excitation utilizing a intense semiconductor laser, thereby producing a solid-state laser output very efficient and high in quality.

Claims

1. A beam arrangement converter for a semiconductor laser characterized in that a laser beam group output from a twa-dimensional array semiconductor laser including a plurality of linear array semiconductor lasers in the form of aligned dashed line segments and stacked in a plurality of arrays in the direction perpendicular to said arrays are converted into a ladder-shaped beam group aligned in the direction of the stack.

2. A semiconductor laser device characterized by comprising a beam arrangement converter and a focusing lens for focusing the output of said beam arrangement converter, wherein said beam arrangement converter is such that a laser beam group output from a two-dimension,al array semiconductor laser including a plurality of linear array semiconductor lasers in the form of aligned dashed line segments and stacked in a plurality of arrays in the direction perpendicular to said arrays, is converted into a plurality of ladder-shaped laser beams aligned in the direction of the stack.

3. A beam arrangement converter for a semiconductor laser characterized in that a plurality of laser beams output from a two-dimensional array semiconductor laser including a plurality of semiconductor laser light-emitting elements having continuous or quasi-continuous exits aligned in the form of dashed line segments and stacked in the direction perpendicular to the direction of said alignment, are converted into a plurality of ladder-shaped laser beams aligned in the direction of the stack.

4. A semiconductor laser device characterized by comprising a two-dimensional array semiconductor laser including a plurality of semiconductor laser light-emitting elements having continuous or quasi-continuous exits aligned in the line segments and stacked in the direction perpendicular to the direction of said alignment, a beam arrangement converter for converting said laser beams output from said two-dimensional array semiconductor laser into a plurality of ladder-shaped laser beams aligned in the direction of the stack, and a focusing lens for focusing the output of said beam arrangement converter.

5. A semiconductor laser device characterised by comprising:

a stack array laser diode including a plurality of laser beam elements arranged in a plurality of columns in a two-dimensional array in such a manner that a plurality of emitters each extending in a first direction for emitting laser beams are aligned as a plurality of columns in the direction perpendicular to said first direction;
a first condenser arranged in front of said stack array laser diode for collimating by refracting each column of said laser beams in a second direction substantially perpendicular to said first direction;
a first beam converter arranged in front of said first condenser for receiving the laser beams collimated in said second direction and radiating by converting each group of the laser beams into a substantially ladder-shaped laser beam column extending in said first direction;
a beam compressor for receiving a plurality of columns of said substantially ladder-shaped laser beam groups and radiating by converting said columns of said laser beam groups into a plurality of columns of substantially ladder-shaped laser beam groups compressed into the form having shorter intervals of ladder steps and extending in said first direction;
a second beam converter arranged in front of said beam compressor for receiving said plurality of paid columns of said substantially ladder-shaped laser beam groups extending in said first direction with shortened intervals of said ladder steps and converting each column of said substantially ladder-shaped laser beam groups extending in said first direction into a corresponding column of substantially ladder-shaped laser beam groups extending in said second direction, with the result that all the laser beams are converted into substantially ladder-shaped laser beam groups aligned in said second direction; and a second condenser for paralleling by collimating said substantially ladder-shaped aligned laser beams in the direction substantially perpendicular to said second direction; and a third condenser for condensing the laser beams radiated from said second condenser at a focal point.

6. A semiconductor laser device characterized by comprising:

a stack array laser diode including a plurality of laser beam elements arranged in a two-dimensional array, said laser beam elements each including a plurality of emitters aligned in a first direction in a plurality of columns for radiating laser beams, or a stack array laser diode including a plurality of laser beam elements arranged in a two-dimensional array, said laser beam elements each including a multiplicity of emitters aligned closely to each other in said first direction in a plurality of columns so that a plurality of substantially continuously aligned columns of laser beams are radiated as laser beams;

a first condenser arranged in front of said stack array laser diode for collimating by refracting each column of said laser beams in a second direction substantially perpendicular to said first direction;
a first beam converter arranged in front of said first condenser for dividing the laser beams in each of said columns into laser beam units, a plurality of optical elements being arranged in parallel in each column for bending the axis of the cross section of each of said laser beam units substantially at right angles, said first beam converter receiving the laser beam groups collimated in said second direction and turning the axis of the cross section of each of said laser beam units for each optical element, thereby radiating said plurality of said divided laser beam units as substantially ladder-shaped laser beams extending in said first direction;

a beam compressor for receiving said plurality of columns of substantially ladder-shaped laser beams and converting said laser beams into a plurality of columns of substantially ladder-shaped laser beams extending in said first direction with shortened intervals between ladder steps;

a second beam converter arranged in front of said beam compressor for receiving a plurality of columns of substantially ladder-shaped laser beams extending in said first direction with shortened intervals between ladder steps and converting each column of said substantially ladder-shaped laser beams extending in said first direction into a corresponding column of substantially ladder-shaped laser beams extending in said second direction, with the result that all the laser beams are radiated by being converted into an alignment of substantially ladder-shaped laser beams extending in said second direction;
a second condenser for parallelizing by collimating said alignment of substantially ladder-shaped laser beams in the direction substantially perpendicular to said second direction; and a third condenser for condensing said laser beams radiated from said second condenser at a focal point.

7. A semiconductor laser device as described in claim 5 or 6, characterized by further comprising a fourth condenser arranged between said first beam converter and said beam compressor for collimating by refracting each column of said laser beams in a second direction substantially perpendicular to said first direction.

8. A semiconductor laser device as described in any one of claims 5 to 7, characterized by comprising an optical fiber having an end surface thereof in a focal plane of said third condenser.

9. A semiconductor laser device as described in any one of claims 5 to 8, characterized in that said first condenser is a one-dimensional array of cylindrical lenses.

10. A semiconductor laser device as described in claim 7 or 8, characterized in that said fourth condenser is a ones-dimensional array of cylindrical lenses.

11 A semiconductor laser device as described in any one of claims 5 to 10, characterized in that said beam compressor is an anamorphic prism or a pair of anamorphic prisms.

12. A semiconductor laser device as described in any one of claims 5 to 11, characterized in that said first beam converter comprises a plurality of optical elements each including a light receiving portion for receiving the incident light having a first axis in the cross section thereof perpendicular to the optical axis, an optical system for turning said first axis of said cross section of the light beam at substantially right angles, and a light exit portion for emitting the exit light beams passed through said, optical system, said optical elements being arranged two-dimensionally on the radiation surface of said stack array laser diode in such a manner that said light receiving portion and said light exit portion axe arranged adjacently to each other two-dimensionally on the same plane as a beam converter.

13. A semiconductor laser device as described in any one of claims 5 to 12, characterized in that said second beam converter comprises a plurality of optical elements each including a light receiving portion for receiving the incident light having a first axis of the cross section thereof perpendicular to the optical axis, an optical system for turning said first axis of said cross section of the light beam at substantially right angles, and a light exit portion for emitting the exit light beams passed through said optical system, said optical elements being arranged with said light receiving portion and said light exit portion arranged linearly adjacently to each other on the same plane in such a manner that said optical elements correspond to the radiation surface of each of a plurality of columns of substantially ladder-shaped laser beams radiated from said beam compressor with shortened intervals of ladder steps.

14. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical elements each provide a space defined by reflection surfaces including said first reflection surface vertical and included by about 45 degrees with respect to the incident light beams, said second reflection surface parallel to the incident light beams and inclined by about 45 degrees with respect to the horizontal plane, and said third reflection surface perpendicular to the vertical surface parallel to the incident light beams, parallel to the crossing line between said first reflection surface and said second reflection surface and inclined by about 45 degrees with respect to the horizontal plane.

15. A semiconductor laser device as described in, any one of claims 5 to 11, characterized in that said optical element is a prism having a first total reflection surface, a second total reflection surface, a third total reflection surface, a plane of incidence, an exit plane and a coupling surface, wherein sand first total reflection surface, said second total reflection surface and said third total reflection surface cross each other at an angle of 60 degrees, said plane of incidence and said exit plane parallel to each other cross said second total reflection surface at right angles and are inclined by about 45 degrees with respect to the first and third total reflection surfaces, and said coupling surface is parallel to the second total reflection surface, and wherein ache third total reflection surface, the plane of incidence and the exit plane of a prison are located adjacently to each other on the same plane and coupled with the coupling surface and the second total reflection surface of an adjoining prism, a one-dimensional array of said prisms being used as the second beam converter described in claim 13, said prisms in a two-dimensional array including a parallel of said one-dimensional arrays being used as the first beam converter described in Claim 12.

16. A semiconductor laser device as described in any one of claims 5 to 11, characterized in that said second beam converter described in claim 13 is an optical glass structure including first and second flat surfaces parallel to each other, a third flat surface crossing said first flat surface at an included angle of 135 degrees, and a fourth flat surface having surface portions periodically bent at an angle of 60 degrees and continuously formed in corrugated form with ridges and valleys extending in such a direction as to cross said first flat surface at an angle of tan-1 (1/.sqroot.2 ), each ridge line and each valley line being parallel with said third flat surface, wherein said first flat surface constitutes a plane of incidence, said second flat surface constitutes an exit plane, that portion of said bent surface making up said fourth surface which crosses said first flat surf ace at an included angle of 45 degrees constitutes a first reflection surface, the other surface portion of said bent surface constitutes a second reflection surface, and said third flat surface constitutes a third reflection surface, and wherein a one-dimensional array of a plurality of said optical glass members arranged in parallel is used as the first beam converter described in claim 12.

17. A semiconductor laser device as described in any one of claims 5 to 11, characterized in that said second beam converter described in claim 13 is a mirror structure including a first surface crossing a flat surface perpendicular to the optical axis of the incident light at an included angle of 135 degrees, and a second surface having regularly bent surfaces continuously formed , in corrugated form with ridges and valleys at a bending angle of 60 degrees and extending in such a direction as to cross said flat surface perpendicular to said optical axis of said incident light at an angle of tan-1(1/.sqroot.2, each ridge line and each valley line being parallel with said first flat surface, wherein said first flat surface and said second surface are mirror finished, that portion of said bent surface making up said second surface which crosses said flat surface perpendicular to said optical axis of said incident light at an included angle of 45 degrees constitutes a first reflection surface, the other portion of said bent surface constitutes a second reflection surface, and said first flat surface constitutes a third reflection surface, and wherein a one-dimensional array of a plurality of said mirror structures arranged in parallel is used as said first beam converter described in claim 12.

18. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical element includes a pair of convex cylindrical lenses arranged in predetermined spaced opposed relation with each other with the axes thereof inclined by about 45 degrees.

19. A semiconductor laser device as described in Claim 12 or 13, characterized in that said beam converter is a one-dimensional array of a plurality of pairs of said convex cylindrical lenses arranged in predetermined spaced opposed relation with each other with the axes thereof inclined by about a5 degrees.

20. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical element is a cylindrical lens having a convex lens portion at each side end surface thereof, and a plurality of said optical elements are coupled to each other at an angle of about 45 degrees to the incident light beams.

21. A semiconductor laser device as described in claim 12 or 13, characterized in that said beam converter is a one-dimensional array of a plurality of cylindrical lenses having a convex lens portion at each side end Surface thereof and coupled to each other at an angle of about 45 degrees to the incident light beams.

22. A semiconductor laser device as described in claim 12 or 13, characterized in that said beam converter is a prism of optical glass having a rectangular cross section, wherein a plurality of cylindrical surfaces inclined by about 45 degrees in the same direction are formed on the plane of incidence and the exit plane, and the light beams entering each cylindrical surface exit with the cross section thereof turned by about 90 degrees.

23. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical element is a dove prism having a trapezoidal cross section, and a plurality of said optical elements are arranged at an angle of about 45 degrees.

24. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical element includes a pair of optical units arranged in opposed relation to each other with the center axis thereof inclined by about 45 degrees, the power of said optical units being changed by diffraction only in the direction perpendicular to the center axis thereof.

25. A semiconductor laser device as described in claim 12 or 13, characterized in that said beam converter includes a pair of binary optic elements arranged on the incidence side and the exit side, respectively, in predetermined spaced opposed relation with each other, the surfaces of the incidence-side binary optic element and the exit-side binary optic element are formed with a plurality of stepped surfaces symmetric about the center axis inclined by about 45 degrees and having the depth changed in such a manner as to change the power only in the direction perpendicular to said center axis, and said laser beams incident at each of said axially symmetric stepped surfaces exit with the cross section thereof turned by about 90 degrees.

26. A semiconductor laser device as described in claim 12 or 13, characterized in that said optical element includes an optical unit so structured that the refractive index thereof changes continuously and the power of said optical unit is changed only in the direction perpendicular to the direction of the arrangement thereof, said optical unit being arranged at about 45 degrees with respect to a horizontal surface.

27. A semiconductor laser device as described in claim 12 or 13, characterized in that said beam converter includes a plurality of one-dimensional graded index lens elements of an optical glass material whose refractive index is highest on the central surface, and the lower, the nearer to the side surface thereof, a plurality of sand lens units being coupled to each other with said central surface inclined by about 45 degrees to the horizontal surface.

28. A semiconductor laser device as described in claim 12 or 13, characterized in that said beam converter includes a plurality of pairs of semicylindrical graded index lens elements inclined by about 45 degrees and arranged in opposed relation to each other in the same direction on the two surfaces o~ an optical glass plate, the refractive index of said lens element being highest at the center of said semicircle and progressively decreased outward.

29. A LD pumped solid-state laser device characterized by comprising a semiconductor laser device described in any one of claims 5 to 7 and 9 to 11, and a solid-state laser element having an exciting light receiving surface matched at the focal point of the third condenser described in any one of claims 5 to 7 and 9 to 11.

30. A LD pumped solid-state laser device characterized by comprising a semiconductor laser device described in claim 8, an optical system for collimating and condensing the light emitted from the optical fiber described in claim 8 at a focal point, and a solid-state laser element having an exciting light receiving surface matched at said focal point.