CA2462093A1 - Phonon-blocking, electron-transmitting low-dimensional structures - Google Patents

Phonon-blocking, electron-transmitting low-dimensional structures Download PDF

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Publication number
CA2462093A1
CA2462093A1 CA002462093A CA2462093A CA2462093A1 CA 2462093 A1 CA2462093 A1 CA 2462093A1 CA 002462093 A CA002462093 A CA 002462093A CA 2462093 A CA2462093 A CA 2462093A CA 2462093 A1 CA2462093 A1 CA 2462093A1
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material systems
thermoelectric
physical interface
superlattice
systems
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CA002462093A
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French (fr)
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CA2462093C (en
Inventor
Rama Venkatasubramanian
Edward Siivola
Thomas Colpitts
Brooks O'quinn
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Laird Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.

Claims (27)

1. A thermoelectric structure comprising:
at least first and second material systems having different lattice constants and interposed in contact with each other;
a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is substantially maintained; and said at least first and second material systems having a charge carrier transport direction normal to said physical interface.
2. The structure of Claim 1, wherein said physical interface is a Van Der Waals bonded interface between said first and second material systems.
3. The structure of Claim 1, wherein said lattice mismatch is in at least a plane parallel to a central axis common to both materials, said lattice mismatch producing an acoustic mismatch and thereby reducing thermal conduction along the central axis.
4. The structure of Claim 1, wherein said lattice mismatch is in at least a plane perpendicular to a central axis common to both first and second material systems, said lattice mismatch producing an acoustic mismatch and thereby reducing thermal conduction along the central axis.
5. The structure of Claim 1, wherein said at least first and second material systems have a band energy offset within kT at a predetermined temperature, said bond energy offset selected to permit charge transport across a central axis common to both materials systems at the predetermined temperature, where k is the Boltzmann constant and T is absolute temperature.
6. The structure of Claim 5, wherein the band energy offset is in a range from near zero to ~3kT.
7. The structure of Claim 5, wherein the band energy offset is less than or equal to 2 kT.
8. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having a conduction miniband which transports electrical current normal to said physical interface.
9. The structure of Claim 8, wherein said physical interface comprises a Van der Waals bonded interface.
10. The structure of Claim 8, wherein said superlattice structure comprises covalent bonds and said minband is configured to have a current transport direction along said covalent bonds.
11. The structure of claim 1, wherein said at least first and second material systems and the physical interface comprise:
superlattices in a Bi2Te3/Sb2Te3 material system oriented along a c-axis so that Van der Waals bonds are along a central axis common to both materials systems.
12. The structure of claim 1, wherein said at least first and second material systems and the physical interface comprise:
superlattices in a Bi2Te3/Bi2TexSe3-X material system oriented along a c-axis so that Van der Waals bonds are along a central axis common to both materials systems.
13. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a Bi2Te3/Sb2Te3 superlattice, said Bi2Te3/Sb2Te3 superlattice formed on a Bi2Te3 buffer deposited on a GaAs growth-substrate prior to a Bi2Te3/Sb2Te3 superlattice deposition.
14. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a Bi2Te3/Bi2TexSe3-x superlattice formed on a Bi2Te3 buffer deposited on a GaAs growth substrate prior to a Bi2Te3/Bi2TexSe3-x superlattice deposition, and remaining after removal of the Bi2Te3 buffer and the growth substrate.
15. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having a total thermal conductivity between 5 and 20 mW
/cm-K.
16. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having a lattice contribution to said total thermal conductivity of ~ 1 to 6 mW/cm-K.
17. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having a Seebeck coefficient between 175 and 350 µV/K.
18. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having an electrical resistivity between ~0.25 mOhm-cm and 3 m-Ohm-cm along a c-axis of the superlattice structure.
19. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure with periods in said superlattice structure in a range of ~ 30 to 80 .ANG..
20. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure with periods in said superlattice structure in a range of ~ 50 to 60.ANG..
21. The structure of Claim 1, wherein said at least first and second material systems have a cross-plane Seebeck coefficient within an order of magnitude of an in-plane Seebeck coefficient.
22. The structure of Claim 1, wherein said at least first and second material systems and said physical interface comprise:
a superlattice structure with a lattice mismatch at said interface occurring in a plane of epitaxial growth of said at least two material systems and providing an acoustic mismatch to reduce thermal conduction across said physical interface.
23. The structure of Claim 22, wherein, said super lattice structure includes Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2.85Se0.15 superlattices having van der Waals bonded interfaces.
24. The structure of Claim 1, wherein said at least first and second material systems and the physical interface comprise:
a superlattice structure having band offsets between interfaces of said superlattice structure ranging from near zero to ~ 3 kT, where k is the Boltzmann constant and T is absolute temperature for a predetermined temperature of charge carrier transport.
25. The structure of Claim 24, wherein said band offsets range from ~ kT to 2 kT.
26. The structure of Claim 25, wherein said superlattice structure has component dimensions less than a unit cell of said superlattice structure without varying a period of said superlattice structure.
27. The structure of claim 1, wherein the at least first and second material systems include a superlattice structure joined by a Van Der Waals bonding interface, said superlattice structure having a miniband current transport direction along a Van Der Waals bonding direction.
2~. The structure of Claim 1, wherein the at least first and second material systems include a superlattice structure joined by a covalent bonding interface, said superlattice structure having a miniband current transport direction along a covalent bonding direction.
29. The structure of Claim 1, wherein the at least first and second material systems include a superlattice structure consisting substantially of only pure and unalloyed components.
30. The structure of claim 1, wherein the at least first and second material systems have a ZT of at least 1.4.
31. The structure of claim 1, wherein the at least first and second material systems are deposited using metal organic chemical vapor deposition.
32. The structure of claim 1, comprising:
orthogonally-quantum-confined superlattice phonon-blocking electron-transmitting structures.
33. The structure of Claim 32, comprising:
at least one of a quantum wire, a quantum dot, a nano-dot, and a quantum box.
34. The structure of Claim 33, comprising:
carbon nano-tubes included in said at least first and second material systems and comprising quantum wires.
35. The structure of Claim 32, comprising:
an orthogonally quantum-confined and sphere-like nano-dot, quantum-dot, or quantum-box.
36. A thermoelectric device comprising:
a heat source plate;
a heat sink plate operating at an elevated temperature with respect to the heat source plate;
at least one n-type thermoelectric element including the thermoelectric structure of Claim 1;

at least one p-type thermoelectric element including the thermoelectric structure of Claim 1 and electrically connected in series to said at least one n-type thermoelectric element.
37. The device of Claim 36, further comprising:
ohmic contacts to the at least one n-type thermoelectric element and the t least one p-type thermoelectric element.
38. The device of Claim 37, wherein the ohmic contacts include Cr.
39. The device of Claim 36, wherein the ohmic contacts include at least one adhesion promoter.
40. The device of Claim 39, wherein the adhesion promoter includes one or more metals selected from Cr, NiCr, Ti, Mo, W, and alloys containing these metals.
41. The device of Claim 37, wherein the ohmic contacts include at least one diffusion barrier.
42. The device of Claim 41, wherein the diffusion barrier includes one or more metals selected from Ni, Cr, NiCr, Pd, Fe, and alloys containing these metals.
43. The device of Claim 42, wherein the ohmic contacts have a resistivity less than 10-7 Ohm-cma.
44. The device of Claim 37, wherein the ohmic contacts comprise Ohmic metallizations of at least one of Cr, Au, Ni, and Au.
45. The device of Claim 44, wherein the ohmic metallizations include one or more metals selected from a group of Au, Cu, Ni, Ag, Pd, Pt, Al, Ga, In, and alloys containing these metals.
46. The device of Claim 45, wherein the ohmic contacts have a resistivity less than 10-7 Ohm-cm2.
47. The device of Claim 36, wherein the thermoelectric device is a thermoelectric cooler.
48. The device of Claim 47, wherein the thermoelectric cooler comprises at least one of a refrigerator and an air conditioner.
49. The device of Claim 36, wherein the thermoelectric device is a power conversion device 50. The device of Claim 36, further comprising:

a pressurizing mechanism including chemical dopants in thermoelectric nanostructures of the at least first and second material systems, said chemical dopants configured to generate a misfit-induced pressure in the thermoelectric structure.
51. The device of Claim 36, further comprising:
a magnetizing mechanism including chemical dopants in thermoelectric nanoastructures of the at least first and second material systems, said chemical dopants including magnetic materials.
52. A dynamic random access memory including the thermoelectric devices of any one of Claims 36, 50, and 51 configured as at least one cooler.
53. The memory of Claim 52, wherein the dynamic random access memory is configured as a static random access memory.
54. A thermoelectric power conversion device comprising:
at least first and second material systems having different lattice constants and interposed in contact with each other;
a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is substantially maintained;
said at least first and second material systems having a charge carrier transport direction normal to said physical interface;
a heat sink connected to the at least first and second material systems;
a heat source connected to the heat sink through the at least first and second material systems; and electrodes connected to the at least first and second material systems and configured to output a thermoelectric voltage.
55. The device of Claim 54, wherein said heat sink comprises a cold side of K to 310K and said heat source comprises a hot side of 310 to 450K.
56. The device of Claim 54, wherein the thermoelectric device has a ZT of at least 1.4.
57. The device of Claim 54, further comprising:
a pressurizing mechanism including chemical dopants in thermoelectric nanostructures of the at least first and second material systems, said chemical dopants configured to generate a misfit-induced pressure in the structure.
58. The device of Claim 54, further comprising:

a magnetizing mechanism including chemical dopants in thermoelectric nanoastructures of the at least first and second material systems, said chemical dopants including magnetic materials.
59. A thermoelectric heating and cooling device comprising:
at least first and second material systems having different lattice constants and interposed in contact with each other;
a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is substantially maintained;
said at least first and second material systems having a charge carrier transport direction normal to said physical interface;
at least one of a heat sink and a heat source connected to the at least first and second material systems; and said thermoelectric device configured to direct change transport to at least one of the heat sink for cooling and the heat source for heating.
60. The device of Claim 59, wherein said heat sink comprises a cold side of K to 310K and said heat source comprises a hot side of 310 to 450K.
61. The device of Claim 59, wherein the thermoelectric device has a ZT of at least 1.4.
62. The device of Claim 59, further comprising:
a pressurizing mechanism including chemical dopants in thermoelectric nanostructures of the at least first and second material systems, said chemical dopants configured to generate a misfit-induced pressure in the structure.
63. The device of Claim 59, further comprising:
a magnetizing mechanism including chemical dopants in thermoelectric nanoastructures of the at least first and second material systems, said chemical dopants including magnetic materials.
64. The device of Claim 59, wherein said heat sink is configured to connect to at least one of a microprocessor chip, a laser chip, and a superconducting chip.
65. The device of Claim 59, wherein said heat source is configured to connect to components of at least one of a microprocessor chip, a laser chip, and a superconducting chip.

66. The device of Claim 54, wherein said heat sink is configured as a heat exchanger in a refrigerating unit.
67. The device of Claim 54, wherein said heat sink is configured as a heat exchanger in an air conditioning unit.
68. A thermoelectric power conversion device comprising:
means for phonon-blocking and electron-transmitting across at least first and second material systems having different lattice constants and interposed in periodic contact with each other;
a heat sink connected to the at least first and second material systems;
a heat source connected to the heat sink through the at least first and second material systems; and electrodes connected to the at least first and second material systems and configured to output a thermoelectric voltage.
69. A thermoelectric cooling and heating device comprising:
means for phonon-blocking and electron-transmitting across at least first and second material systems having different lattice constants and interposed in periodic contact with each other;
at least one of a heat sink and a heat source connected to the at least first and second material systems; and said thermoelectric device configured to direct charge transport to at least one of the heat sink for cooling and the heat source for heating.
70. The device of Claim 1, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 100%.
71. The device of Claim 70, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 5%.
72. The device of Claim 54, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 100%.
73. The device of Claim 72, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 5%.
74. The device of Claim 59, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 100%.
75. The device of Claim 74, wherein the lattice mismatch between the at least first and second material systems ranges from ~ 1 to 5%.

76. The device of Claim 1, wherein the at least first and second material systems are periodically arranged.
77. The device of Claim 54, wherein the at least first and second material systems are periodically arranged.
78. The device of Claim 59, wherein the at least first and second material systems are periodically arranged.
CA2462093A 2001-10-05 2002-10-07 Phonon-blocking, electron-transmitting low-dimensional structures Expired - Fee Related CA2462093C (en)

Applications Claiming Priority (3)

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US32703001P 2001-10-05 2001-10-05
US60/327,030 2001-10-05
PCT/US2002/031835 WO2003032408A1 (en) 2001-10-05 2002-10-07 Phonon-blocking, electron-transmitting low-dimensional structures

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EP (1) EP1433208A4 (en)
JP (1) JP2005506693A (en)
KR (1) KR100933967B1 (en)
CA (1) CA2462093C (en)
WO (1) WO2003032408A1 (en)

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