CA2463500A1 - Transmitter photonic integrated circuit (txpic) chip architectures and drive systems and wavelength stabilization for txpics - Google Patents

Transmitter photonic integrated circuit (txpic) chip architectures and drive systems and wavelength stabilization for txpics Download PDF

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Publication number
CA2463500A1
CA2463500A1 CA002463500A CA2463500A CA2463500A1 CA 2463500 A1 CA2463500 A1 CA 2463500A1 CA 002463500 A CA002463500 A CA 002463500A CA 2463500 A CA2463500 A CA 2463500A CA 2463500 A1 CA2463500 A1 CA 2463500A1
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Prior art keywords
chip
txpic
wavelength
integrated circuit
photonic integrated
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CA002463500A
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French (fr)
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CA2463500C (en
Inventor
Fred A. Kish, Jr.
Charles H. Joyner
Jonas Webjorn
Robert B. Taylor
Alan C. Nilsson
David F. Welch
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Infinera Corp
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Individual
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12033—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for configuring the device, e.g. moveable element for wavelength tuning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
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    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
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    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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    • H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
    • H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
    • H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
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Abstract

A monolithic transmitter photonic integrated circuit chip comprises an array of modulated sources formed on the PIC chip and having different operating wavelengths according to a standardized wavelength grid and providing signal outputs of different wavelengths. Pluralities of wavelength tuning elements are integrated on the chip, one associated with each of the modulated sources.
An optical combiner is formed on the PIC chip and the signal outputs of the modulated sources are optically coupled to one or more inputs of the optical combiner and provided as a combined channel signal output from the combiner.
The wavelength tuning elements provide for tuning the operating wavelength of the respective modulated sources to be approximate or to be chirped to the standardized wavelength grid. The wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.

Claims (171)

1. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of modulated sources formed on the PIC chip and having different operating wavelengths according to a standardized wavelength grid and providing signal outputs of different wavelengths;
a plurality of wavelength tuning elements integrated on the chip, one associated with each of the modulated sources;
an optical combiner formed on the PIC chip;
the signal outputs of the modulated sources optically coupled to one or more inputs of the optical combiner and provided as a combined channel signal output from the combiner;
said wavelength tuning elements for tuning the operating wavelength of the respective modulated sources to approximate or to be chirped to the standardized wavelength grid.
2. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein said wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
3. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein said wavelength tuning elements are temperature changing elements comprising heater elements.
4. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 3 wherein said heater elements are micro-strip layers of TiWN, W, Pt/Ti, Pt, TaN or NiCr.
5. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 3 wherein said heater elements are micro-TEC elements.
6. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein the modulated sources comprise DFB or DBR semiconductor lasers.
7. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein the optical combiner comprises a power coupler, a star coupler, a multimode interference (MMI) coupler, an Echelle grating or an array waveguide grating (AWG).
8. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 7 wherein the optical combiner is a wavelength selective combiner comprising an Echelle grating or an array waveguide grating (AWG).
9. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein the standardized grid is a 6.692 ITU, or other symmetric or asymmetric wavelength grid.
10. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein the modulated sources each comprise a semiconductor laser operated cw at its respective grid operating wavelength, and an integrated optical modulator optically coupled between the laser source and the optical combiner to provide the signal outputs.
11. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 10 wherein the semiconductor lasers are DFB lasers, the optical combiner is an arrayed waveguide grating (AWG) and the optical modulators are electro-absorption modulators (EAMs).
12. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 wherein the modulated sources comprise directly modulated semiconductor lasers to provide the signal outputs.
13. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 12 wherein the semiconductor lasers are DFB lasers or DBR lasers.
14. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 1 further comprising:
a wavelength monitoring unit optically coupled to sample the combined channel signal output;
a wavelength control system coupled to the respective wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined channel signal output;
the wavelength control system to adjust the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid.
15. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 14 wherein said wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
16. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 14 further comprising a wavelength selective combiner comprising said optical combiner, and another wavelength tuning element coupled to said wavelength selective combiner to correspondingly change its wavelength grid passband response to be optimized to the standardized wavelength grid.
17. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 16 wherein said wherein said wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
18. An optical transmitter comprising:
a monolithic transmitter photonic integrated circuit (TxPIC) chip comprising an array of modulated sources formed on the PIC chip and having different operating wavelengths according to a standardized wavelength grid and providing signal outputs of different wavelengths;

a wavelength selective combiner formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid;
the signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner and provided as a combined signal output from the combiner;
a first wavelength tuning element coupled to each of the modulated sources;
a second wavelength tuning element coupled to the wavelength selective combiner;
a wavelength monitoring unit coupled to the wavelength selective combiner to sample the combined signal output;
a wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output;
the wavelength control system for adjusting the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.
19. The optical transmitter of claim 18 wherein said wherein said first and second wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
20. The optical transmitter of claim 18 wherein said wherein said first and second wavelength tuning elements are temperature changing elements comprising heater elements.
21. The optical transmitter of claim 20 wherein said heater elements are micro-strip layers of TiWN, W, PdTi, Pt, TaN or NiCr.
22. The optical transmitter of claim 20 wherein said heater elements are micro-TEC
elements.
23. The optical transmitter of claim 18 wherein the modulated sources comprise DFB or DBR semiconductor lasers.
24. The optical transmitter of claim 23 wherein the wavelength selective combiner is an Echelle grating or an array waveguide grating (AWG).
25. The optical transmitter of claim 18 wherein the standardized grid is a 6.692 ITU, or other symmetric or asymmetric wavelength grid.
26. The optical transmitter of claim 18 wherein the modulated sources each comprise a semiconductor laser operated cw at its respective grid operating wavelength, and an optical modulator coupled between the laser source and the wavelength selective combiner to provide the signal outputs.
27. The optical transmitter of claim 26 wherein the semiconductor lasers are DFB lasers, the wavelength selective combiner is an arrayed waveguide grating (AWG) and the optical modulators are electro-absorption modulators.
28. The optical transmitter of claim 18 wherein the modulated sources comprise directly modulated semiconductor lasers to provide the signal outputs.
29. The optical transmitter of claim 28 wherein the semiconductor lasers are DFB lasers or DBR lasers.
30. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of DFB laser sources each operating at a different wavelength and providing a respective light output;
an arrayed waveguide grating;
the respective light outputs of said DFB laser sources coupled to a respective input of said arrayed waveguide grating;
an output of said arrayed waveguide grating providing a combined light output of said DFB
laser sources from said arrayed waveguide grating to an optical waveguide providing a multiplexed output from said chip; and an optical amplifier optically coupled to the optical waveguide to receive the combined light output to amplify the combined light output.
31. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 wherein said chip includes a plurality of electro-absorption modulators, one each between a DFB laser source and the input to said arrayed waveguide grating.
32. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 wherein said optical amplifier is a laser amplifier.
33. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 32 wherein said laser amplifier is integrated on the chip.
34. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 32 wherein said laser amplifier is a gain clamped semiconductor optical amplifier (GC-SOA).
35. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 32 wherein said laser amplifier is integrated on said chip and optically coupled to said arrayed waveguide grating optical waveguide.
36. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 wherein said optical amplifier is an optical fiber amplifier optically coupled to the combined light output of said chip.
37. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 36 wherein said optical fiber amplifier is an erbium doped fiber amplifier (EDFA).
38. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 further comprising a plurality of electro-absorption modulators (EAMs), one each between a DFB
laser source and its corresponding input to said arrayed waveguide grating;
said modulators providing modulated data on an output provided by said DFB laser source forming a plurality of signal channels with different wavelengths approximating or chirped to a standardized wavelength grid.
39. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 wherein said chip further includes a plurality of semiconductor optical amplifiers, one each between a DFB laser source and its corresponding input to said arrayed waveguide grating to amplify the respective outputs provided by said DFB laser sources.
40. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 further comprising a monitoring photodiode integrated in said chip to monitor the intensity or power of a corresponding DFB laser source.
41. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 40 wherein said monitoring photodiode is integrated adjacent to a back end of a corresponding DFB laser source.
42. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 40 wherein said monitoring photodiode is integrated in each optical path between each said DFB
laser and its corresponding input to said arrayed waveguide grating to monitor its corresponding DFB laser output, said monitoring photodiodes also each modulated at a different frequency to provide an identification tag on the DFB laser output.
43. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 30 further comprising a wavelength monitoring unit coupled to receive a portion of the combined light output to identify each laser output via its identification tag and monitor its corresponding operating wavelength.
44. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of DFB laser sources integrated on said chip, each operating at a different wavelength and providing a respective light output;
a first local tuning wavelength element for each of said DFB sources;

an array of electro-absorption modulators integrated on said chip, each respectively to receive the light output of a DFB laser source and provide a modulated output comprising a channel signal, all of said modulated channel signals representative of a different wavelength, together approximating a standardized wavelength grid; and an arrayed waveguide grating integrated on said chip, coupled to receive said modulated channel signals and combine them into a multiplexed channel signal on an optical waveguide output from the chip; and a second local tuning element for said arrayed waveguide grating.
45. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 wherein the standardized grid is the G.692 ITU.
46. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 wherein the standardized grid is any symmetric or asymmetric wavelength grid.
47. Thee monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 wherein said local wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
48. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to monitor the channel signals from said modulators.
49. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a plurality of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of a corresponding DFB laser source to monitor the light intensity or power thereof.
50. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said DFB laser source and its corresponding electro-absorption modulator to monitor the light intensity or power thereof.
51. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a first set of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of said of a corresponding DFB laser source to monitor the light intensity or power thereof, and a second set of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to monitor the channel signals from said modulators.
52. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising an optical amplifier outside of the chip and optically coupled to receive said multiplexed channel signal output from the chip and to amplify the multiplexed channel signal prior to launching the same in an optical transport network.
53. The monolithic transmitter photonic integrated circuit (TxPIC) chip apparatus of claim 52 wherein said optical amplifier is an optical fiber amplifier.
54. The monolithic transmitter photonic integrated circuit (TxPIC) apparatus of claim 53 wherein said optical fiber amplifier is an erbium doped fiber amplifier.
55. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a plurality of semiconductor optical amplifiers integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to amplify the channel signals from said modulators.
56. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 55 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said semiconductor optical amplifiers and said arrayed waveguide grating to monitor the light intensity or power from a corresponding semiconductor optical amplifier.
57. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 55 further comprising a first set of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of said of a corresponding DFB laser source to monitor the light intensity or wavelength thereof, and a second set of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said semiconductor optical amplifiers to monitor the channel signals from said modulators.
58. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 55 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said DFB laser source and its corresponding electro-absorption modulator to monitor the light intensity or power thereof.
59. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 55 further comprising at least one integrated photodiode on said chip at the output of said arrayed waveguide grating to monitor the intensity or power of the multiplexed channel signal output.
60. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 55 further comprising at least one integrated photodiode on said chip at a higher order Brillouin zone output of said arrayed waveguide grating to monitor the power of the multiplexed channel signal output.
61. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising at least one integrated photodiode on said chip optically coupled to an output of said arrayed waveguide grating to monitor the power of the multiplexed channel signal output.
62. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 61 wherein said at least one integrated photodiode can be cleaved from said chip after performing their monitoring operation.
63. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 62 wherein said at least one integrated photodiode is a PIN photodiode or an avalanche photodiode (APD).
64. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 wherein there are at least two integrated photodiodes integrated on said chip and optically coupled at higher order Brillouin zone outputs of said arrayed waveguide grating on opposite sides of a first order Brillouin zone output, said first order Brillouin output comprising the multiplexed channel signal output from the chip, said at least two integrated photodiodes to monitor the intensity of the multiplexed channel signal or the passband response of said arrayed waveguide grating to determined if its response substantially matches the wavelength grid of said DFB laser sources.
65. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 64 wherein said at least two integrated photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
66. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 64 wherein said at least two integrated photodiodes can be cleaved from said chip after performing their monitoring operation.
67. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 44 further comprising a plurality of photodiodes integrated on said chip and formed in an optical path after each of said DFB laser sources, said electro-absorption modulators, and said arrayed waveguide grating for monitoring the output thereof.
68. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 67 further comprising a photodiode adjacent to a back end of each of said DFB laser sources for monitoring the back end light output of said DFB laser sources.
69. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 68 wherein said DFB laser source monitoring photodiodes are integrated on the chip.
70. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 69 wherein said monitoring photodiodes are later cleaved from the chip.
71. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of DFB laser sources integrated on said chip, each operating at a different wavelength and providing a respective light output;

an array of electro-absorption modulators integrated on said chip, one each to receive the respective light output of a DFB laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a wavelength on a standardized wavelength grid; and an arrayed waveguide grating integrated on said chip, coupled to receive said channel signal from said modulators and combine them to provide for a multiplexed channel signal on an optical waveguide output from the chip at least two integrated photodiodes integrated on said chip at a higher order Brillouin zone outputs of said arrayed waveguide grating on opposite sides of a first order Brillouin zone output;
said first order Brillouin output comprising the optical waveguide output from the chip, said at least two integrated photodiodes to monitor the power of the multiplexed channel signal or the passband response of said arrayed waveguide grating to determined if its response substantially matches the wavelength grid of said DFB laser sources.
72. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 71 wherein said at least two integrated photodiodes are a PIN photodiodes or an avalanche photodiodes (APDs).
73. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 71 wherein said at least two integrated photodiodes can be cleaved from said chip after performing their monitoring operation.
74. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of DFB laser sources integrated on said chip, each operating at a different wavelength and providing a respective light output;
an array of electro-absorption modulators integrated on said chip, one each to receive the respective light output of a DFB laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a wavelength on a standardized wavelength grid;
an arrayed waveguide grating integrated on said chip and coupled to receive said channel signals from said modulators and combine them to provide a multiplexed channel signal on an optical waveguide output from said chip; and a plurality of saturable absorbers (SAs) integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to enhance the extinction ratio of a corresponding electro-absorption modulator.
75. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 74 further comprising a plurality of semiconductor optical amplifiers integrated on said chip, one each in an optical waveguide between each of said saturable absorbers (SAs) and said arrayed waveguide grating to amplify the channel signals from said absorbers.
76. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 74 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said saturable absorbers and said arrayed waveguide grating to monitor the light power from a corresponding saturable absorber.
77. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 74 further comprising a plurality of photodiodes integrated on said chip, one fore each of said DFB laser sources and adjacent to the back end of a corresponding DFB laser source to monitor its light power.
78. A monolithic transmitter photonic integrated circuit (TxPIC) comprising:
an array of DFB laser sources integrated on said chip, each operating at a different wavelength on a standardized wavelength grid and providing a respective light output;
an array of electro-absorption modulators integrated on said chip, a plurality of said modulators serially coupled together in an optical waveguide from each respective DFB laser source to receive the respective light output from a corresponding DFB laser source and provide a modulated output comprising a channel signal, all of said modulated channel signals representative of a wavelength on the standardized wavelength grid; and an arrayed waveguide grating integrated on said chip, said arrayed waveguide grating coupled at its input to all of said optical waveguides to receive said channel signal from said modulators and combine them to provide a multiplexed channel signal on an optical waveguide output from said chip.
79. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 wherein each of said serially coupled electro-absorption modulators for each respective DFB
laser source is tested to determine which one has the optimum characteristics comprising the highest extinction ratio and the optimum chirp.
80. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 wherein each of the serially coupled electro-absorption modulators for each respective DFB
laser source not utilized are slightly positively biased or not biased at all (zero potential) so that they remain transparent to the light output from their respective DFB
laser source.
81. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 wherein at least two of said serially coupled electro-absorption modulators for each respective DFB laser source are operated in tandem to achieve a higher extinction ratio.
82. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 wherein said chip further includes a plurality of semiconductor optical amplifiers, one each between said serially coupled modulators and said arrayed waveguide grating to respectively amplify the outputs from said modulators.
83. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 further comprising a plurality of photodiodes integrated on said chip, said photodiodes one each formed in an optical waveguide either between each of the outputs from said serially coupled modulators and the input to said arrayed waveguide grating or adjacent to the back end of each corresponding DFB laser source, or both.
84. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 83 wherein said photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
85. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 78 wherein at least two of said serially coupled electro-absorption modulators for each respective DFB laser source is operated in tandem as a single modulator wherein one modulator is amplitude modulated and the other modulator is phase modulated.
86. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of DFB laser sources, each formed in an optical waveguide of an array of optical waveguides and operating at a different wavelength and providing a respective light output;
an array of electro-absorption modulators integrated on said chip, one each in an optical waveguide of said waveguide array to receive the respective light output of a DFB laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a wavelength on a standardized wavelength grid;
a first array of photodiodes integrated on said chip, one in an optical waveguide of said waveguide array to receive a modulated output from a respective electro-absorption modulator and function as monitoring photodiode or as a saturable absorber (SA); and an arrayed waveguide grating integrated on said chip, said arrayed waveguide grating coupled to each of said optical waveguides of said waveguide array to receive said channel signal from each said photodiodes and combine them for a multiplexed channel signal in an optical waveguide output from the chip.
87. The monolithic transmitter photonic integrated circuit (TxPIC) of claim 86 further comprising an optical amplifier optically coupled to receive the combined light output from said arrayed waveguide grating to amplify the multiplexed channel signal.
88. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 86 wherein said optical amplifier is integrated in said chip in said chip optical waveguide output or is external of said chip and optically coupled to receive said multiplexed channel signal.
89. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 88 wherein said integrated optical amplifier is a laser amplifier.
90. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 88 wherein said external optical amplifier is an optical fiber amplifier.
91. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 86 wherein a second array of photodetectors are integrated on said chip, one each adjacent to the back end of each corresponding DFB laser source.
92. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 91 wherein said second array photodetectors are PIN photodiodes or avalanche photodiodes (APDs).
93. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 86 wherein said second array photodetectors are PIN photodiodes or avalanche photodiodes (APDs).
94. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of modulated sources, each modulated source formed in an optical waveguide of an array of optical waveguides and operating as a different wavelength and providing a respective modulated channel signal output;
a first array of photodiodes integrated on said chip, one each said waveguide array to receive a modulated output from a respective modulated source;
each of said photodiodes for insertion of a respective channel tone provided on each channel signal output where each channel tone is a different frequency from one another to provide an identification tag for each respective channel signal; and an optical combiner integrated on said chip and coupled to each of said array waveguides to receive said tone modulated channel signals from each of said photodiodes and combine them as a combined channel signal output in an optical waveguide output from the optical combiner.
95. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 94 wherein the modulated sources are DFB or DBR semiconductor lasers.
96. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 94 wherein the optical combiner comprises a wavelength selective combiner.
97. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 96 wherein the wavelength selective combiner is an Echelle grating or an array waveguide grating (AWG).
98. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 94 wherein the standardized grid is a G.692 ITU, or other symmetric or asymmetric wavelength grid.
99. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 94 wherein the modulated sources each comprise a semiconductor laser operated cw at its respective grid operating wavelength, and an optical modulator coupled between the laser source and a respective photodiode.
100. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 99 wherein the semiconductor lasers are DFB lasers, the optical combiner is an arrayed waveguide grating (AWG) and the optical modulators are electro-absorption modulators.
101. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 94 wherein the modulated sources comprise directly modulated semiconductor lasers to provide the signal outputs.
102. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 101 wherein the semiconductor lasers are DFB lasers or DBR lasers.
103. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 94 further comprising:
a wavelength tuning element coupled to each of the modulated sources;
a wavelength monitoring unit coupled to the optical combiner to sample the combined channel signal output;
a wavelength control system coupled to the respective wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined channel signal output;
the wavelength control system to adjust the respective wavelengths of operation of the modulated sources to closer approximate or to be chirped to the standardized wavelength grid.
104. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 103 wherein said wherein said wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
105. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 103 further comprising another wavelength tuning element coupled to the optical combiner to correspondingly change its wavelength grid passband response to closer approximate the standardized wavelength grid.
106. The transmitter monolithic photonic integrated circuit (TxPIC) chip of claim 105 wherein said wherein said first and second wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
107. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 94 further comprising a second array of photodiodes integrated on said chip, one each in an optical waveguide of said waveguide array cascaded with a photodiode of said first array of photodiodes in each of said optical waveguides, said second array photodiodes for monitoring the output from a respective electro-absorption modulator.
108. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 94 further comprising:
a photodetector provided at an output of said arrayed waveguide grating to tap of a small amount of said multiplexed channel signal;
an optical spectrum monitor for identifying each of said tone frequencies and correspondingly identifying its associated channel signal wavelength;
a controller for determining if the identified channel signal wavelength is off of its desired standardized grid wavelength and developing a correction signal for changing the operating wavelength of corresponding DFB laser sources to the standardized grid wavelength.
109. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 108 wherein each of said DFB laser sources includes an on-chip heater, said controller providing a correction signal for changing a bias on said heater to change the operating wavelength of a corresponding DFB laser source.
110. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 108 wherein said controller provides a corresponding change to a driver current to at least part of each of said DFB laser sources to change the operating wavelength of a corresponding DFB
laser source.
111. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 94 wherein said channel tones are in a frequency range of about 1 KHz to about 200 KHz.
112. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 111 wherein said channel tones are in a frequency range around 200 KHz.
113. A monolithic transmitter photonic integrated circuit (TxPIC) chip system comprising:
an array of laser sources, each formed in an optical waveguide of an array of optical waveguides and operating as a different wavelength and providing a respective light output;
an array of electro-optic modulators integrated on said chip, one each in an optical waveguide of said waveguide array to receive the respective light output of a laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a different wavelength on a predetermined wavelength grid;
an array of photodiodes integrated on said chip, one each in an optical waveguide of said waveguide array to receive a modulated output from a respective electro-optic modulator;
each of said photodiodes for alternately monitoring the intensity or the extinction ratio or chirp of its corresponding electro-optic modulator and modulated for insertion of a respective channel tone provided on each channel signal where each channel tone is different in frequency from one another to provide an identifier tag for each respective channel signal; and multiplexer integrated on said chip, said multiplexer coupled to each of said optical waveguides of said waveguide array to receive said channel signal from each of said photodiodes and combine them for a multiplexed channel signal in an optical waveguide output from the chip.
114. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 further comprising:
a photodetector provided at an output of said multiplexer to tap of a small amount of said multiplexed channel signal;
an optical spectrum monitor for identifying each of said tone frequencies and correspondingly identifying its associated channel signal wavelength;
a controller for determining if the identified channel signal wavelength is off of its desired standardized grid wavelength and developing a correction signal for changing the operating wavelength of corresponding laser sources to best approximate a standardized grid wavelength.
115. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 114 wherein each of said laser sources includes an on-chip heater, said controller providing a correction signal for changing a bias on said heater to change the operating wavelength of a corresponding laser source.
116. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 114 wherein said controller provides a corresponding change to a current driver to at least part of each of said laser sources to change the current in each corresponding laser source which corresponding changes its wavelength to a desired operating wavelength on said grid.
117. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 114 wherein arrayed waveguide grating output photodiode is integrated on said chip and coupled to receive its output from a higher order Brillouin zone output from said arrayed waveguide grating, said multiplexed channel signal output from a first order Brillouin zone output from said arrayed waveguide grating.
118. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said tone frequencies are in a frequency range of about 1 KHz to about 200 KHz.
119. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 118 wherein said tone frequencies are in a frequency range around 200 KHz.
120. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
121. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein each of said optical waveguides includes at least two photodiodes between each of said electro-optic modulators and said arrayed waveguide grating, one of said photodiodes for monitoring the power, extinction ratio or chirp of its corresponding electro-optic modulator and the other if said photodiodes modulated to provide a channel tone on a respective channel signal where each channel tone is different in frequency from one another to provide an identifier tag for each respective channel signal.
122. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 121 wherein said photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
123. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said laser sources are DFB lasers or DBR lasers.
124. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said electro-optic modulators are electro-absorption modulators or Mach-Zehnder modulators.
125. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said multiplexer is an Echelle grating or an arrayed waveguide grating (AWG).
126. The monolithic transmitter photonic integrated circuit (TxPIC) chip system of claim 113 wherein said multiplexer is a combiner comprising a power coupler, MMI
coupler, Echelle grating or an arrayed waveguide grating (AWG).
127. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of laser sources each operating at a different wavelength on a standardized wavelength grid and providing a respective light output;

a plurality of segmented electrodes formed along at least a portion of the longitudinal length of each of said laser sources;

a current driver coupled to each of the segmented electrodes of each of said laser sources;
the operating wavelength of each of said laser sources adjustable by removing the connection of its corresponding driver to one or more of said electrode segments thereby changing the bias across the corresponding laser source and, correspondingly its effective refractive index and, hence its operating wavelength;

an arrayed waveguide grating;

the respective light outputs of said laser sources coupled to an input of said arrayed waveguide grating;

an output of said arrayed waveguide grating providing a combined light output of said laser sources from said arrayed waveguide grating to an optical waveguide providing a multiplexed output from said chip.
128. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 127 wherein said segmented electrode portions vary monotonically in increasing width along the laser source longitudinal length.
129. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 127 wherein operating wavelength adjustment is achieved through disconnection of electrode segments of various widths from the current driver.
130. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 127 wherein said segmented electrode portions are of uniform width along the laser source longitudinal length.
131. The TxPIC chip of claim 127 wherein the connection is made through on-chip resistors.
132. The TxPIC chip of claim 131 wherein one or more of said on-chip resistors are trimmed to adjust the operating wavelength.
133. The TxPIC chip of claim 127 wherein the operating wavelength adjustment is achieved through disconnection of resistor segments connecting each laser source to a respective contact pad connect to said current driver.
134. The TxPIC chip of claim 133 wherein the disconnection is achieved through laser trimming.
135. The TxPIC chip of claim 127 wherein said laser sources comprise DFB laser arrays or DBR laser arrays.
136. A monolithic transmitter photonic integrated circuit (TxPIC) chip adaptable to be a monolithic receiver photonic integrated circuit (RxPIC) chip comprising:

an array of laser sources integrated on said chip, each operating at a different peak wavelength and providing a respective light output;

an array of modulators integrated on said chip, one each to receive the respective light output of a laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a wavelength on a predetermined wavelength grid; and a combiner integrated on said chip and optically coupled to receive said channel signal from said modulators and combine them to provide for a multiplexed channel signal on an optical waveguide output from the chip;

an array of photodiodes integrated on said chip and each optically coupled to an output from said combiner;

said photodiode array cleaved from the chip between said photodiode array and said combiner when the chip is to function as TxPIC chip with said combiner functioning as a channel signal combiner, and said laser source and modulator arrays cleaved from said chip between said modulator array and said combiner with said combiner functioning as a de-combiner.
137. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein the chip is cleaved from said chip between said modulator array and said combiner when one or more of said laser sources or modulators malfunction so that the chip is still operational and useful as a monolithic receiver photonic integrated circuit (RxPIC) chip.
138. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein said array photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
139. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein said combiner is a wavelength selective combiner.
140. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 139 wherein said wavelength selective combiner is an Echelle grating or an arrayed waveguide grating (AWG).
141. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein said combiner or decombiner is a power combiner, a MMI coupler, an Echelle grating or an arrayed waveguide grating (AWG).
142. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein said laser sources DFB lasers or DBR lasers.
143. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 136 wherein said electro-optic modulators are electro-absorption modulators or Mach-Zehnder modulators.
144. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an array of modulated laser sources optical waveguides formed in the PIC chip and having different predetermined wavelengths of operation approximating a predetermined wavelength grid;

an optical multiplexer formed on the PIC chip;

the signal outputs of the modulated laser sources optically coupled to a plurality of inputs of the optical multiplexer and provided as a multiplexed output from the optical multiplexer;

a plurality first tuning elements on or in contact with the PIC chip, said first wavelength tuning elements to adjust the operating wavelengths of said laser sources;

a wavelength changing element coupled to each of the laser sources;

a wavelength monitoring unit coupled to the optical multiplexer to sample the multiplexed output; and a wavelength control system coupled to the first wavelength tuning elements for adjusting the respective operating wavelengths the laser sources to the predetermined wavelength grid.
145. The TxPIC of claim 144 further comprising at least one second wavelength tuning element for adjustment of the optical multiplexer wavelength grid to approximate a predetermined wavelength grid.
146. The TxPIC of claim 144 wherein the wavelength tuning elements are a heater, a TEC, or tuning current.
147. The TxPIC of claim 144 wherein each modulated source has its own wavelength tuning element.
148. The TxPIC of claim 147 wherein the wavelength changing element is one of a heater, micro TEC array element or tuning current.
149. The TxPIC of claim 144 wherein a second wavelength changing element is coupled to the optical multiplexer; and the adjustment of the optical multiplexer wavelength grid to approximately match the predetermined wavelength grid.
150. The TxPIC of claim 149 wherein a second wavelength changing element is coupled to the optical multiplexer; and the adjustment of the optical multiplexer wavelength grid to match the predetermined wavelength grid.
151. The TxPIC of claim 144 wherein the wavelength tuning of the modulated source can be adjusted independent of the power that is emitted from the optical multiplexer for that channel.
152. A monolithic transmitter photonic integrated circuit (TxPIC) chip comprising:
an integrated arrayed waveguide grating (AWG) having an input space region, the optical waveguides coupled to the AWG input;

a plurality of modulated sources where one such source and modulator formed in each optical waveguide;

each of the laser sources having a different operational wavelength approximating a standardized wavelength grid;

the AWG having a wavelength grid with a passband substantially matching the standardized wavelength grid of the laser sources and comprising a multiplexer of modulated channel signals provide as an input from each of the waveguides coupled to the AWG
input and providing as an output a multiplexed channel signals for off-chip optical coupling to an optical link; and a controller to monitor and tune the operational wavelengths of the modulated sources to optimize an operational wavelength grid of the modulated sources to the standardized wavelength grid and, further, to monitor and shift the wavelength grid of the TxPIC AWG to substantially match the operational wavelength grid of the laser sources.
153. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 152 wherein the modulated sources comprise distributed feedback (DFB) lasers and the modulators comprise electro-absorption (EA) modulators.
154. The monolithic transmitter photonic integrated circuit (TxPIC) chip of claim 152 wherein the modulated sources comprise directly modulated DFB or DBR lasers.
155. A method of tuning optical components integrated on a monolithic chip comprising the steps of:

providing a group of first optical components each fabricated to have an operating wavelength approximating a wavelength on a standardized grid;

including with each of the first optical components a local wavelength tuning component; and tuning each of the first optical components through their local wavelength tuning component to have a closer wavelength response approximating their wavelength on the standardized grid.
156. The method of claim 155 wherein the standardized grid is the G.692 ITU.
157. The method of claim 155 wherein the standardized grid is any symmetric or asymmetric wavelength grid.
158. The method of claim 155 wherein said local wavelength tuning components are temperature changing elements, current and voltage changing elements or bandgap changing elements.
159. The method of claim 155 wherein said first optical components are modulated sources.
160. The method of claim 159 wherein said modulated elements comprise DFB
lasers or DBR lasers.
161. The method of claim 159 wherein said modulated elements comprise electro-absorption modulators or Mach- Zehnder modulators.
162. The method of claim 155 comprising the further step of:

providing a second optical component integrated on the chip with and optically coupled to the group of first optical components; and including with the second optical component a local wavelength tuning component; and tuning the second optical component to have a closer wavelength response approximating the standardized grid.
163. The method of claim 162 further comprising the steps of:

providing a plurality of output waveguides from the second optical component;
and selecting one of the output waveguides having the optimum wavelength response approximating the standardized grid.
164. The method of claim 162 wherein the standardized grid is the G.692 ITU.
165. The method of method 162 wherein the standardized grid is any symmetric or asymmetric wavelength grid.
166. The method of claim 162 wherein said first and second optical component local wavelength tuning components are temperature changing elements, current and voltage changing elements or bandgap changing elements.
167. The method of claim 162 wherein the second optical component comprises a wavelength selective combiner.
168. The method of claim 167 wherein said wavelength selective combiner is an arrayed waveguide grating or an Echelle grating.
169. The method of claim 162 wherein said first optical components are modulated sources.
170. The method of claim 169 wherein said modulated elements comprise DFB
lasers or DBR lasers.
171. The method of claim 169 wherein said modulated elements comprise electro-absorption modulators or Mach- Zehnder modulators.
CA2463500A 2001-10-09 2002-10-08 Transmitter photonic integrated circuit (txpic) chip architectures and drive systems and wavelength stabilization for txpics Expired - Fee Related CA2463500C (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US32820701P 2001-10-09 2001-10-09
US32833201P 2001-10-09 2001-10-09
US60/328,207 2001-10-09
US60/328,332 2001-10-09
US36759502P 2002-03-25 2002-03-25
US60/367,595 2002-03-25
US37034502P 2002-04-05 2002-04-05
US60/370,345 2002-04-05
US37801002P 2002-05-10 2002-05-10
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