CA2489237A1 - Semiconductor emitter comprising a saturated phosphor - Google Patents

Semiconductor emitter comprising a saturated phosphor Download PDF

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Publication number
CA2489237A1
CA2489237A1 CA002489237A CA2489237A CA2489237A1 CA 2489237 A1 CA2489237 A1 CA 2489237A1 CA 002489237 A CA002489237 A CA 002489237A CA 2489237 A CA2489237 A CA 2489237A CA 2489237 A1 CA2489237 A1 CA 2489237A1
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Canada
Prior art keywords
conversion material
light
emitter
emitter package
package
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Abandoned
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CA002489237A
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French (fr)
Inventor
Bernd Keller
Yankun Fu
James Seruto
James Ibbetson
Jayesh Bharathan
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Wolfspeed Inc
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Individual
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Abstract

A high efficiency, high yield emitter package is disclosed exhibiting limite d wavelength variations between batches and consistent wavelength and emission characteristics with operation. An emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material. The semiconductor emitter is preferably a light emitting diode (LE D) or laser diode.

Description

SATURATED PHOSPHOR SOLID STATE EMITTER
This application claims the benefit of provisional application Serial Number 60/388,327 to Keller et al., which was filed on June 13, 2002.
BACKGROUND OF THE INVENTTON
Field of the Invention This invention relates to solid state emitters and more particularly to light emitting diodes (LEDs) laser diodes whose wavelength of emitted light is converted by a 1S conversion material.
Description of the Related Art Light emitting diodes (LEDs) are solid-state devices that convert electric energy to light, and generally comprise an active layer of semiconductor material sandwiched betweeri, two oppositely doped semiconductor layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light. Light is emitted omnidirectionally from the active layer and from all surfaces of the LED. Recent advances in LEDs (such as Group III nitride based LEDs) have resulted in highly efficient light sources that surpass the efficiency of filament-based z light sources, providing light with equal or greater brightness in relation to input power.
Solid-state semiconductor laser diodes convert electrical energy to light in much the same way as LEDs.
They are structurally similar to LEDs but include mirrors on two opposing surfaces', one of which is partially transmissive. In the case of edge emitting lasers, the mirrors are on the side surfaces; the mirrors provide optical feedback so that stimulated emission can occur.
This stimulated emission provides a highly collimated/coherent light source. A vertical cavity laser works much the same as an edge emitting laser but the mirrors are on the top and the bottom. It provides a l0 similar collimated output from its trip surface. Some types of solid-state lasers can be, more efficient than LEDs at converting electrical current to' light.
Green emitting LEDs can be fabricated from different material systems including the Group III nitride based material system. Conventional green emitting LEDs, however, are typically subject to low yield and are considered difficult to fabricate with uniform emission characteristics from batch to batch. The LEDs can also exhibit large wavelength variations across the wafer within a single batch, and can exhibit strong wavelength and emission variations~with operation conditions such as drive current and temperature.
Phosphors, polymers and dyes have been used to surround LEDs to downconvert the LED's light to a different wavelength., thereby modifying the light emitted by the LED.
For example, a single blue emitting LED has been surrounded with a yellow phosphor, polymer or dye, with a typical phosphor being cerium-doped yttrium aluminum garnet (Ce:YAG). [See Nichia Corp. white LED, Part No. NSPW300BS, NSPW312BS, etc.; See also U.S. Patent No. 5,959,316 to Lowery, "Multiple Encapsulation of Phosphor-LED Devices"].
The surrounding phosphor material "downconverts" the wavelength of some of the LED light and re-emits it as a different wavelength such that the overall "LED package"
emits two wavelengths of light. In the case of a blue emitting LED surrounded by a yellow phosphor, some of the blue light passes through the phosphor without being converted, while the remaining light is downconverted to yellow. The blue light passing through the phosphor plays a major role in the overall color of light emitted by the LED
package, which emits both blue and yellow light that combine to provide a white light.
l0 In these types of LED packages, it can be difficult to apply the downconverting material in such a way that the light source (LED) emits homogeneous light. Replicability and mass production also presents problems because even slight fluctuations in the layer thickness of the conversion material can change the color of emitted light.
U.S. Patent No. 6,066,861 to Hohn et al. discloses a Basting composition that surrounds an LED and contains conversion material in stable dispersion such that the light from the LED appears more homogeneous. In one embodiment, the conversion material (luminous substance): is a phosphor group Q~f the general formula A3B5X12:M having particles sizes <20 ~m and a mean grain diameter d5o<5 ~.m.
Similar to the LED package having a yellow conversion material surrounding a blue LED, the casting composition is ~S arranged so that a substantial portion of the LED light passes through, while the remaining LED light is downconverted.
Another disadvantage of the typical blue LED
surrounded by a yellow downconverting material is that the resulting white light can have an unacceptable color temperature and poor color rendering such that the LED is not suitable for standard room lighting. U.S. Patent No.
6,252,254 to Soules et a1. discloses a blue LED (or a laser diode) covered with a green and red downconverting phosphor. Similar the blue LED surrounded by yellow downconverting material, the green/red phosphor absorbs some of the blue LED light and reemits red and green light, such that the LED and phosphor both emit light that combines as a white light. Soules et al. discloses that the resulting white light has an improved color temperature and improved color rendering.
Another disadvantage of a typical blue LED with yellow downconverting material is that the material can deteriorate, leading to color tone deviation and darkening of the fluorescent material. U.S. Patent No. 5,998,925 to Shimuzu et al. discloses a LED to address this disadvantage by providing a light emitting component (e. g.
Z5 LED or laser diode) and a phosphor capable of absorbing part of the light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed. light. The light emitting component comprises a nitride based semiconductor and the phosphor contains a particular garnet fluorescent material. Shimuzu et al.
discloses that th~~ phosphor has excellent resistance to light so that the fluorescent properties experience little deterioration when used over an extended period of time.
Light extraction is another recognised problem with conventional LEDs, which typically have an active layer and doped layers with a refractive index n of about 3.5. The LEDs are then encapsulated in an epoxy having a refractive index n of about 1.5. Application of Snell's law shows that only light emitted from the active region within an angle theta of. about 0.443 radians to normal of the interface with the epoxy can exit from the top of the LED. For larger angles, the light is trapped within the LED by total internal reflection, such that only a fraction of the Light (approximately 9.6% in some cases) contributes to light emission. U.S. Patent No. 5,813,753 to Vriens et al.
discloses a UV/blue LED phosphor device with enhanced conversion and extraction of Light. The device utilizes 5 most of the LED's edge emitted light by the appropriate positioning of reflectors and phosphor. The device also affects angular emission and color of the visible light emitted by the UV/blue LED-phosphor device by the use. of one or more dielectric filters on the device. In one embodiment, a light emitting device is placed in a cup-shaped header with a reflector that is then filled with a transparent material having a homogeneously mixed phosphor.
The device anticipates that not all of the light will be absorbed by the phosphor and includes a glass plate that is l5 placed on the device that prevents UV/blue light which is not absorbed by the phosphor grains from exiting into air.
In another embodiment a long wave pass filter (LPW) is added adjacent to the glass plate to reflect UV/blue light back to the phosphor and to transmit visible light emitted by the phosphor All of the LEl~~packages described above have a common characteristic. Each relies on or contemplates that a portion of the light from the LED (or laser diode) passes through the conversion material without being absorbed and in most cases the light passing through plays an important role in the overall color emitted by the package.
SUMMARY OF THE INVENTION
The present~invention seeks to provide solid state emitter packages that are easy to manufacture and provide a high yield, while at the same time providing emitter packages exhibiting limited wavelength variations between batches of packages and exhibit consistent wavelength and emission characteristics with operation over time. One embodiment of a saturated conversion material emitter package according to the present invention comprises a semiconductor emitter and a conversion material. The conversion material is arranged to absorb substantially all of the light emitting from the semiconductor emitter and re-emit light at one or more different wavelength spectrums of light. The conversion material is also arranged so that there is not an excess of conversion material to block the re-emitted light as it emits from the emitter package. The emitter package emits light at the one or more wavelength.
spectrums from the conversion material.
Another embodiment of a saturated conversion material emitter package according to the present invention comprises one or more semiconductor emitters, each of which emits light in response to a bias. A metal cup is included with the semiconductor emitters arranged at the base of the cup. A plurality of conductive paths are coupled to the semiconductor emitters for applying a bias to the emitters to cause them to emit light. A conversion material is arranged so that light from the emitters passes through the conversion material, with the conversion material absorbing substantially all light from the emitters and re-emitting light at one or more different wavelengths of light . The conversion material is also arranged so that it does not substantially block the re-emitted light as it emits from the emitter package. The emitter package emits light at the one or more wavelength spectrums from the conversion material.
In~one embodiment of an emitter package according to the present invention, the semiconductor emitter comprises a blue of UV emitting LED, with the LED light passing through a green phosphor. The phosphor is saturated.by the light such that the package emits in the green portion of the spectrum. This arrangement offers a number of advantages over convention nitride-based green LEDs. Unlike green LEDs, the emission spectrum of green phosphor is essentially fixed by the specific material and is accordingly less subject to wavelength variation. Phosphors in general can also have a spectrally broader emission spectrum, which may be desirable in some applications.
The light from an LED passing through a saturated conversion material according to the present invention can be subject to losses due to non-unity conversion efficiency of the phosphor and the Stokes shift. This loss, however, is acceptable because the preferred embodiments of LED
packages according to the present invention comprise high efficiency, high yield LEDs, such as UV and blue emitting Group III nitride-based LEDs, which compensate for the losses and result in a LED package with higher emission efficiency compared to typical LEDs.
This technology is well suited for manufacturing and the development of a wide variety of flexible products for solid-state lighting. The possible applications of LED
packages according to the present invention include, but are not limited to, traffic lights, displays, specialty illumination, signals, etc. The invention also can be used in combination with blue and red emitters to fabricate a v white light emitting LED package, which would be suited for nearly any application requiring high efficiency, high color rendering solid-state lighting. This includes indoor and outdoor commercial and residential architectural lighting, auto taillights,,displays, flashbulbs and general lighting. This will result in cumulative energy saving and reduction of environmental impacts.
These and other further features and advantages of the invention will be apparent to those skilled in the art from. the following detailed description, taken together with the accompanying drawings, in which:
BRIEF DESCRIPTION OF 'THE DRAWINGS
FIG. 1 is a sectional view of one embodiment of a saturated conversion material LED package according to the present invention;
FIG. 2 is a graph showing the output intensity verses l0 peak emission wavelength of a saturated conversion material LED according to the present invention;
FIG. 3 is a graph showing the wavelength spectrum of saturated conversion material LED according to the present invention;
FIG. 4 is a graph showing the output loss verses operating hours for saturated conversion material LEDs according to the present invention.
FIG. 5 is a sectional view of another embodiment of a saturated conversion material LED package according to the present invention;
FIG. 6 is a sectional view of one embodiment of a c saturated conversion material semiconductor laser package according to the present invention;
FIG. 7 is a sectional view of an embodiment of a saturated conversion material emitter package according to the present invention having different concentration layers of conversion material; and FIG. 8 is a sectional view of an embodiment of a saturated conversion material emitter package according to the present invention having homogeneous concentration of conversion material.
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 shows one embodiment of a saturated conversion material LED package 10 according to the present invention.
It comprises an LED'12 (although more than one LED can be used) which generally includes an active layer sandwiched between two oppositely doped layers. The layers have standard thicknesses and the active layer emits light omnidirectionally when a bias is applied across the oppositely doped layers. The layers of the LED 12 can be made of many different semiconductor material systems and the LED 12 can emit many different colors of light. The LED
12 preferably emits blue light and can be formed of a semiconductor material from the Group III nitride based material system, which provides for high efficiency radiation of blue light. Group III nitrides refer to those semiconductor compounds formed between nitrogen and the elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and indium (In). The term also refers to ternary and tertiary compounds such as AlGaN
and AlInGaN.
The LED 12 c~n also comprise a substrate with the LED's active and oppositely doped layers formed in a stack ~on the substrate. The substrate can be formed of many different materials such as sapphire (A12O3) , silicon (Si) or silicon carbide (SiC), with the preferred substrate being a 4H polytype of SiC. Other SiC polytypes can also be used including 3C, 6H and 15R polytypes. A buffer layer can also be included between the substrate and other LED layers to provide an appropriate crystal structure transition.
Silicon .carbide has a much closer crystal lattice match to Group III nitrides than sapphire and results in Group III
nitride films of higher quality. Silicon carbide also has a very high thermal conductivity so that the total output power of Group III nitride devices on silicon carbide is not limited by the thermal dissipation of the substrate (as is the case with some devices formed on sapphire). The availability of silicon carbide substrates also provides 5 the capacity for device isolation and reduced parasitic capacitance that make commercial devices possible. SiC
substrates are available from Cree Research; Inc., of Durham, North Carolina and methods for producing them are set forth in the scientific literature as well as in a U.S.
10 Pat. Nos. Re. 34,861; 4,946,547; and 5,200,022.
The LED's active layer and oppositely doped layers are formed on the substrate using known semiconductor fabrication processes, such as metal-organic chemical vapor deposition (MOCVD). Similarly, techniques for epitaxial growth of Group III nitrides have been reported in scientific literature, and in U.S. Pat. Nos. 5,210,051;
5,393,993; 5,523,589; and 5,292,501.
The LED 12 can also comprise first and second contacts, each of which are arranged in ohmic contact with a respective oppositely doped layer. A bias applied to the contacts is condutcted to the oppositely doped layers, r resulting in electrons and holes being injected into the LED's active region where they recombine to cause the active layer to emit light.
The LED 12 can also be mounted on a submount 14 for mechanical stability. The submount 14 can contain electrical circuitry for controlling the amount of current or power applied to the LED 12 or to otherwise modify the electric signal applied to the LED 12. The submount 14 can also contain components and circuitry. to make the LED
package 10 resistant to electrostatic shock. The submount 14 is mounted at the horizontal base 16 of "metal cup" 18 that typically has first and second conductive paths 20, 22 for applying a bias across the LED's contacts to cause the LED 12 to emit light. Alternatively, the bias can be applied to the LED (or its contacts) fully or partially through the submount 26 and its electronic circuitry. The cup 18 can have a reflective surface 20 that reflects light emitted from the LED 12 so that it contributes to the overall light emitted from the package l0.
The LED 12, submount 14 and conductive paths 20, 22 are encased in a protective layer 24 that is made of a radiation hard and transparent material such as a silicon, resin, or epoxy, with the preferred material being an epoxy. During manufacturing of the package ZO the epoxy is injected into and fills the bottom portion of the cup 18 such that the LED 12, the submount 16, and conductive paths 20, 22 are covered by the epoxy, and the epoxy is then cured.
The LED Z2 further comprises a conversion material layer 26 on top of the transparent material 24 , with . the layer 26 also being made of a radiation hard and transparent material similar to layer 24, and also has a conversion material!~28 distributed throughout. The material 28 can be one or more fluorescent or phosphorescent material such as a phosphor, fluorescent dye or photoluminescent semiconductor. The following list phosphors that can be used as the conversion material 28, grouped by the re-emitted color following excitation:
RED
YZO2S : Eu3+, Bi3+
YV04 : Eu3~, Bi3+
SrS : Euz+
SrY2S4 : Eua+
CaLa254:Ce3+
(Ca, Sr) S : Euz+

Y2O3 : Eu3+, Bi3+
Lu2Oz : Eu3+
(Srz_xLax) (Cel-xEux) 04 Sr2Ce1_XEuX04 Sr2_XEuxCe04 Sr2Ce04 SrTi03 : Pr3+, Ga3+
ORANGE
SrSiO3 : Eu, Bi YELLOW/GREEN
YB03 : Ce3+, Tb3+
BaMgAllo017 : Eu2+, Mn2+
(Sr, Ca, Ba) (Al, Ga) 2S4 : Eu2+
ZnS : Cu+, A13+
LaPO4 : Ce , Tb CaBMg ( Si04 ) 4C12 : Eu2+, Mn2+
(. (Gd, Y, Lu, Se, La, Sm) 3 (Al, Ga, In) 5012 : Ce3+
( (Gd, Y) 1_xSmx) s (All-yGay) sOlz : Ce3+
(Y1_p_q_rGdpCeqSmr) 3 (All_yGay) sOlz Y3 (All_SGas) s012 : Ce3+
(Y, Ga, La) 3A1s012 : Ce3+
Gd3Ins012 : Ce3+
(Gd, Y) 3A1s012 : Ce3+, pr3+
Ba2 (Mg, Zn) Si2O7: Eu2+
(Y, Ca,Sr)3(Al,Ga,Si)s(O,S)12 Gdo,46sr0.31A11.23~xF1.38:Eu2+0.06 (Bal _x_ySrxCay) SiO4 : Eau.
Ba2S i04 : Eu2+ r BLUE
ZnS:Ag,Al COMBINED YELLOW/RED
Y3A1s012 : Ce3+, pr3+
WHITE
SrS : Eu2+; Ce3+., K+
From the list above, the following phosphors are most suitable for use as the conversion material 28 in LED

package 10 by having excitation in the blue and/or UV
emission spectrum, providing a desirable peak emission, having efficient light conversion, and acceptable Stokes shift RED
Lu203 ; Eu3+ . , (Sr2_xLax) (Cel_xEux) 04 Sr2Ce1 _xEux04 Sr2_xEuxCe04 SrTi03 : Pr3+, Ga3+
YELLOW/GREEN
( Sr, Ca , Ba ) (AI , Ga ) 254 : Eu2+
Ba2(Mg,Zn)Si207:Eu2*
2+
Gd0.46Sr0.31A11.23~xF1.38 : Eu o.06 ( Baz_x_ySrxCaY) S i04.: Eu Ba2Si04 : Eu2+
During manufacturing, the conversion material layer 26 is injected on top of the layer 24 to fill most, or all, of the cup 18, and is cured. The particles in material 28 absorb light emitted by the UV LED 12 and re-emit the absorbed light at cane or more wavelength spectrums that are different from the absorbed wavelength. The conversion material 28 can comprise more than one type of material, each of which re-emits light at a different wavelength so that the conversion material layer 26 re-emits more than one wavelength of light. The conversion material 28 can also be in different concentrations throughout the conversion material layer 26.
The amount of LED light absorbed and re-emitted by the conversion material is generally proportional to the amount of conversion material that the LED light passes through.
However, if the LED light passes through too much conversion material 28, part of the conversion material's re-emitted light can be blocked from emitting from the LED
package lOr by excess conversion material 28. This can reduce the overall light emitting efficiency of the package 10. The amount of conversion material that the LED light passes through can be varied by varying the concentration of conversion material 28 or varying the thickness of the layer 26, or both.
In LED package 10, light from the LED 12 passes through a sufficient amount of conversion material 28 so that substantially all of the LED light is absorbed and re emitted at a different wavelength of light. At the same time, the re-emitted light does not pass through an excess conversion material 28 so that the re-emitted light is not blocked from emitting from the package 10. By providing a sufficient amount of conversion material 28 to provide full conversion without blocking, the conversion material 28 is in a "saturation" condition. The amount of conversion material for conversion material saturation depends on the size and luminous flux of the LED 12(or laser). The greater the size and luminous flux, the greater the amount of conversion materia2 28 needed.
In conversion material saturation, the emitted light from the package 10 is composed primarily of photons produced by the conversion material 28. However, in some embodiments it may be desirable to allow a small portion of the LED light to be transmitted through the conversion material 28 without absorption for the purpose of modifying slightly the chromaticity of the resulting package radiation. For the LED 10, most embodiments of the package 10 emit.. less than 10% of the emission power of primary radiation in the absence of the conversion material 28;
i.e. the conversion material 28 absorbs 900 or more of the light from the LED 12.

As described above, the LED 12 is blue emitting and a suitable conversion material is a green phosphor such as SrGa2S4:Eu2+ (Sr:Thiogallate) or Gdo_46Sro,31A11.23GxF1.ae:Eu+ao.os.
Sr:Thiogallate has a peak excitation wavelength ranging 5 from 400 to 450nm anal the percent of blue light (or Uv light) that is absorbed by Sr:Thiogallate and then re-emitted as green light is estimated to be 74% '-~/-So, which makes this phosphor one of the more efficient for excitation in the blue (or ITV) range. The use of a high 10 efficiency blue emitter in combination with a phosphor that is efficient for excitation in the blue range, results in a saturation conversion material LED package that efficiently emits green.
FTGs. 2-4 show results of performance studies 15 completed by applicants on LED packages IO according to the present invention having a blue LED with green conversion .material in, or near, saturation. FIG. 2 shows a graph 40 plotting the emission performance in Lumens of four different LED packages according to the present invention at their peak emission wavelength in nanometers (nm), with 35omA applied across the LED in each package. Using a green Sr:Thiogallate phosphor as the conversion material, the LED
package emitted up to 58 Lumens at its peak wavelength of approximately 530nm, which is a significant improvement over the performance of typical green emitting LEDs.
FIG. 3 shows a graph 50 plotting the emission spectrum as Tntensity in a.u. verses wavelength in nm, of the light re-emitted from green Sr:Thiogallate phosphor from the LED
packages. Each package exhibited a similar spectrum having a peak (~~70rim full width at half maximum (FWHM) centered at -.530-550nm, which is close to the peak of the general photopic human eye response curve. This results in an emission of green light having high efficacy. Applicants also maintained the operation of each of the LED packages under test and each maintained this emission spectrum without change for approximately 168 hours, showing that the LED packages are stable over time.
FIG. 4 shows a graph 60 that plots the light output loss over operating hours for three of the four LED
packages 10 under test. The graph 60 illustrates that for each, the light output loss is minimal over time. This also shows that the LED packages 10 are stable over time and this performance is consistent with the performance of standard green emitting LEDs.
FIG. 5 shows another embodiment of an LED,package 70 according to the present invention, having many similar features as the.package 10 in FIG. 1. It comprises an LED
72 mounted to a submount 74, which is then mounted to the horizontal base 76. of a metal cup 78. First and second conductors 80, 82 are provided to apply a bias across the LED 72, although a bias can be applied in other ways as described above. A protective layer 84 is included over the LED 72, submount 74 and conductive paths 80, 82, and a conversion materiel layer 86 is included on top of the protective layer 84 and includes a conversion material 88.
The LED 72 is UV emitting and can be made of many different material systems, with a preferred material system being the Group III nitride material system. The conversion material 88 can be any of the materials listed above, but is preferably a green phosphor such as . Sr:Thiogallate. The thickness of layer 86 and the concentration of Sr:Thiogallate is such that the conversion material.88~is in saturation, i.e. all of the UV light is absorbed without an excess of conversion material 88 blocking emission of the re-emitted green light.
Sr:Thiogallate is efficient at absorbing W light~and re emitting green light, and using this phosphor in combination with a high efficiency UV LED 72 results in a saturated conversion material LED package 70 that efficiently emits green light.
FIG. 6 shows an embodiment of laser diode package 90 according to the present invention having similar features to the packages 20, 70 described above, but'~instead of having a LED as a light source, the package 90 has a solid-state semiconductor laser diode 92. Mirrors 94, 96 are included on two opposing surfaces of the laser diode 92, with mirror 94 being partially transmissive. The mirrors ~94, 96 provide optical feedback ~so that stimulated emission can occur, which provides a highly collimated/coherent light source. The laser diode 92 can be mounted to a submount 98 that is then mounted to the horizontal base 100 of a metal cup 102 having conductors paths 104, 106 to apply a bias to the laser diode 92. The laser diode 92, submount 98 and conductive paths 104, 106 are covered in a protective layer 108. A conversion layer 110.is included on the protective layer 108 and comprises a conversion material 112, whicl~~can be any of the conversion materials discussed above.
Different laser diodes emitting different colors of light can be used for diode 92 and the conversion material 112 is arranged so that the light from the laser diode 92 passes through it and the LED package 90 operates in saturation of the conversion material 122. All (or most) of the light from diode 92 is absorbed by the conversion material, 112 and re-emitted as a different wavelength of light, while minimizing the amount of re-emitted light blocked by eaccess conversion material 112.
To improve the uniformity of light emitting from the package 90, it can be desirable to scatter the light as it ' passes through the layers 108, 110, particularly in the case of collimated/coherent light from the laser diode 92.
One way to. scatter light is by using scattering particles 114 that randomly refract light. To effectively scatter light, the diameter of the particles 114 should be approximately one half of the wavelength of the light being scattered. In package 90 the scattering parti.'cles 114 are shown in layer 110, although they can also be included in layer 108 or formed in another layer arranged on the layer ZO 110. Light from the diode 92 passes through the particles.
114 and is refracted to mix and spread the light as it passes through the conversion material.
The scattering particles , 114 are shown evenly distributed throughout layer 100 but they can also be distributed in varying concentrations throughout the layer 114 to most effectively scatter the light by matching the pattern of LED light passing through the layer 114. The preferred, scattering particles .would not substantially absorb laser diode light and would have a substantially different index of refraction than the material in which it is embedded (for example, epoxy). The scattering particles 114 should have as high of an index of refraction as possible. Suitable scattering particles can be made of titanium oxide (Ti02) which has a high index of refraction (n=2.6 to 2.9) and is effective at scattering. light. Since the primary requirement for the scattering "particles" is that they have a different index of refraction from their surrounding material and that they have a particular size range, other. elements such as small voids or pores could also be.used as "scattering particles". .
FIG. 7 shows another embodiment of an emitter package 120 having a semiconductor emitter 122 that is either a LED
or a laser diode. Like the packages 10, 70 .and 90 above, the package 120 has a submount 124, reflective cup 126, first and second conductors 128, 130, a protective layer 132 and a conversion material layer 134. However, in the package 120 the protective layer 232 contains a concentration of conversion particles 136 that is different from the concentration of conversion particles 138 in layer 134. The particles 136 can also be a different type from the particles 138, such that layer 132, 134 each re-emits a different color of light. Tn both embodiments, the package 120 is arranged to operate in conversion material saturation.
FIG. 8 shows another embodiment of an emitter package 150 according to the .invention that is the same as the package 120 in FIG. 4, but instead of having a protective Layer 132 and a conversion material layer 134 as shown in FIG. 4, the cup 152 in package 150 is filled with a single conversion layer 156 that serves to protect the packages emitter 158, submount 160, and conductive paths 162, 164 and contains a the conversion material 166 distributed throughout. The conversion material can be homogeneously distributed or distributed in different concentrations.
Like above, the package 150 operates in conversion material saturation such that all (or most) of the light from the emitter 158 is absorbed and re-emitted without the conversion material 166 significantly blocking the re-emitted light.
Although the present invention has been described in considerable detail with reference to certain preferred configurations thereof, other versions are possible, Each of the .LED package embodiments described above can have different components having different features. Each of the LED packages above can have emitters made of different material systems and each can include scattering particles.

Other conversion materials beyond those listed above can be used. Therefore, the spirit and scope of the invention should not be limited to the preferred versions of the invention described above.

Claims (29)

WE CLAIM:
1. An emitter package, comprising:
a semiconductor emitter;
a conversion material arranged to absorb substantially all of the light emitting from said semiconductor emitter and re-emit light at one or more different wavelength spectrums of light, said conversion material also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package, said emitter package emitting light primarily at said one or more wavelength spectrums from said conversion material.
2. The emitter package of claim 1, wherein said semiconductor emitter is made of semiconductor materials from the Group III nitride based material system.
3. The emitter package of claim 1, wherein said semiconductor emitter is a light emitting diode (LED) or a laser diode.
4. The emitter package of claim 1, wherein said conversion material is one or more materials from the group consisting of phosphors, fluorescent dyes and photoluminescent semiconductors.
5. The emitter package of claim 1, wherein said conversion material has peak excitation wavelength in the range if 400 to 450nm.
6. The emitter package of claim 1, wherein said semiconductor emitter is a blue light emitting and said conversion material is SrGa2S4:Eu2+ or Gd0.46Sr0.31Al1.23O x F1.38 Eu+2 0.06, said emitter package emitting green light from said conversion material,
7. The emitter package of claim 1, wherein said semiconductor emitter is a ultra violet (W) light emitting and said conversion material is Sr:Thiogallate (SrGa2S4:Eu) or (Gd0.46Sr0.31)Al1.23O x F1.38:Eu+2 0.06 said emitter package emitting green light from said conversion material.
8. The emitter package of claim 2, wherein said conversion material absorbs at least 900 of light emitted from said semiconductor emitter.
9. The emitter package of claim 1, wherein said conversion material comprises a material from the group consisting of Lu2O3:Eu3+, (Sr2-x La x) (Ce1-x Eu x)O4, Sr2Ce1-x Eu x O4, Sr2-x Eu x CeO4, SrTiO3:Pr3+, Ga3+, (Sr, Ca, Ba) (Al, Ga) 2S4 : Eu2+, Ba2 (Mg, Zn) Si2O:Eu2+, Gd0.46Sr0.31Al1.23O x F1.38:Eu2+0.06, (Ba1-x-y Sr x Ca y) SiO4:Eu, and Ba2SiO4:Eu2+.
10. A saturated conversion material emitter package, comprising:
one or more semiconductor emitters, each of which emits light in response to a bias;
a metal cup, said semiconductor emitters arranged at the base of said cup;
a plurality of conductive paths coupled to said semiconductor emitters for applying a bias to said emitters; and a conversion material arranged so that light from said emitters passes through said conversion material, said conversion material absorbing substantially all light from said emitters and re-emitting light at one or more different wavelengths of light, said conversion material also arranged so that it does not substantially block said re-emitted light as it emits from said emitter package, said emitter package emitting light at said one or more wavelength spectrums from said conversion material.
11. The emitter package of claim 10, wherein said emitter is a light emitting diode (LED) or laser diode made of semiconductor materials from the Group III nitride based material system.
12. The emitter package of claim 10, wherein said conversion material is one or more materials from the group consisting of phosphors, fluorescent dyes and photoluminescent semiconductors.
13. The emitter package of claim 10, wherein said conversion material has peak excitation wavelength in the range if 400 to 450nm.
14. The emitter package of claim 10, wherein said semiconductor emitter is a blue light emitting and said conversion material is Sr:Thiogallate (SrGa2S4:Eu) or (Gd0.46Sr0.31)Al1.23O x F1.38:Eu+2 0.06 said emitter package emitting green light from said conversion material.
15. The emitter package of claim 10, wherein said semiconductor emitter is an ultra violet (W) light emitting and said conversion material is Sr:Thiogallate (SrGa2S4:Eu) or (Gd0.46Sr0.31)Al1.23O x F1.38:Eu+2 0.06, said emitter package emitting green light from said conversion material.
16. The emitter package of claim 10, further comprising a submount, said LED mounted to said submount and said submount being arranged between said LED and said base of said metal cup.
17. The emitter package of claim 10, further comprising a layer of protective material in said metal cup and covering said LED and conductive paths, said layer of protective material being radiation hard and transparent.
18. The emitter package of claim 17, further comprising a conversion material layer on said protective layer, said conversion material distributed throughout said conversion material layer.
19. The emitter package of claim 18, wherein said protective layer contains conversion material at a different concentration than said conversion material in said conversion material layer.
20. The emitter package of claim 10, further comprising a conversion layer filling said cup and covering said emitter and conductive paths, said conversion layer made of protective radiation hard and transparent material with a conversion material spread throughout.
21. The emitter package of claim 10, wherein said conversion material absorbs at least 90% of light emitted from said semiconductor emitter.
22. The emitter package of claim 10, further comprising scattering particles to disperse light from said semiconductor emitters.
23. A saturated conversion material emitter package, comprising:
a semiconductor emitter;
a conversion material arranged to absorb.all of the light emitting from semiconductor emitter and re-emit light at one or more different wavelength spectrums of light.
24. The emitter package of claim 23, wherein said conversion material is also arranged so that there is not an excess of conversion material to block said re-emitted light as it emits from said emitter package.
25. The emitter package of claim 23, wherein said semiconductor emitter is a light emitting diode (LED) or laser diode made of semiconductor materials from the Group III nitride based material system.
26. The emitter package of claim 23, wherein said conversion material is one or more materials from the group consisting of phosphors, fluorescent dyes and photoluminescent semiconductors.
27. The emitter package of claim 23, wherein said conversion material has peak excitation wavelength in the range if 400 to 450nm.
28. The emitter package of claim 23, wherein said conversion material is Sr:Thiogallate (SrGa2S4:Eu) or (Gd0.46Sr0.31)Al1.23O x F1.38:Eu+2 0.06 said emitter package emitting green light from said conversion material.
29. The emitter package of claim 23, wherein said conversion material comprises a material from the group consisting of Lu2O3:Eu3+, (Sr2-x La x) (Ce1-x Eu x)O4, Sr2Ce1-x Eu x O4, Sr2-x Eu x CeO4, SrTiO3:Pr3+, Ga3+, (Sr, Ca, Ba) (Al, Ga)2S4 : Eu2+, Ba2(Mg,Zn)Si2O7:Eu2+, Gd0.46Sr0.31Al1.23O x F1.38:Eu2+ 0.06 (Ba1-x-y Sr x Ca y) SiO4:Eu, and Ba2SiO4:Eu2+,
CA002489237A 2002-06-13 2003-06-12 Semiconductor emitter comprising a saturated phosphor Abandoned CA2489237A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009039801A1 (en) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Radiation-emitting component with conversion element

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US7800121B2 (en) * 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US20040223315A1 (en) * 2003-03-03 2004-11-11 Toyoda Gosei Co., Ltd. Light emitting apparatus and method of making same
KR100609830B1 (en) * 2003-04-25 2006-08-09 럭스피아 주식회사 White Semiconductor Light Emitted Device using Green-emitting and Red emitting Phosphor
US20070051883A1 (en) * 2003-06-23 2007-03-08 Advanced Optical Technologies, Llc Lighting using solid state light sources
US20070138978A1 (en) * 2003-06-23 2007-06-21 Advanced Optical Technologies, Llc Conversion of solid state source output to virtual source
US6995355B2 (en) * 2003-06-23 2006-02-07 Advanced Optical Technologies, Llc Optical integrating chamber lighting using multiple color sources
US20050093422A1 (en) * 2003-10-31 2005-05-05 Chien-Yuan Wang White light-emitting device
JP2005191420A (en) * 2003-12-26 2005-07-14 Stanley Electric Co Ltd Semiconductor light emitting device having wavelength converting layer and its manufacturing method
KR100540848B1 (en) * 2004-01-02 2006-01-11 주식회사 메디아나전자 White LED device comprising dual-mold and manufacturing method for the same
JP4231418B2 (en) 2004-01-07 2009-02-25 株式会社小糸製作所 Light emitting module and vehicle lamp
JP2005208333A (en) * 2004-01-22 2005-08-04 Sharp Corp Flash device, camera equipped with flash device, and semiconductor laser device and manufacturing method therefor
US7615689B2 (en) * 2004-02-12 2009-11-10 Seminis Vegatable Seeds, Inc. Methods for coupling resistance alleles in tomato
TWI241034B (en) 2004-05-20 2005-10-01 Lighthouse Technology Co Ltd Light emitting diode package
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
DE102004038199A1 (en) * 2004-08-05 2006-03-16 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH LED with low color temperature
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7144131B2 (en) * 2004-09-29 2006-12-05 Advanced Optical Technologies, Llc Optical system using LED coupled with phosphor-doped reflective materials
US20060138938A1 (en) * 2004-12-27 2006-06-29 Tan Kheng L White LED utilizing organic dyes
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
JP4679183B2 (en) * 2005-03-07 2011-04-27 シチズン電子株式会社 Light emitting device and lighting device
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
KR101142519B1 (en) 2005-03-31 2012-05-08 서울반도체 주식회사 Backlight panel employing white light emitting diode having red phosphor and green phosphor
WO2006111907A2 (en) * 2005-04-20 2006-10-26 Philips Intellectual Property & Standards Gmbh Illumination system comprising a ceramic luminescence converter
TWI260799B (en) * 2005-05-06 2006-08-21 Harvatek Corp Multi-wavelength white light light-emitting diode
TWI279929B (en) * 2005-05-20 2007-04-21 Cree Inc High efficacy white LED
US8088302B2 (en) 2005-05-24 2012-01-03 Seoul Semiconductor Co., Ltd. Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof
KR101106134B1 (en) * 2005-07-11 2012-01-20 서울옵토디바이스주식회사 Light emitting device employing nanowire phosphors
US7922352B2 (en) * 2005-07-21 2011-04-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Device and method for emitting output light using multiple light sources with photoluminescent material
JP4810152B2 (en) * 2005-07-25 2011-11-09 三井金属鉱業株式会社 Red phosphor and white light emitting device
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
DE102006020529A1 (en) * 2005-08-30 2007-03-01 Osram Opto Semiconductors Gmbh Optoelectronic component has semiconductor body emitting electromagnetic radiation that passes through an optical element comprising wavelength conversion material
KR100724591B1 (en) * 2005-09-30 2007-06-04 서울반도체 주식회사 Light emitting device and LCD backlight using the same
KR20090009772A (en) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. Lighting device
US7918582B2 (en) * 2005-12-30 2011-04-05 Dialight Corporation Signal light using phosphor coated LEDs
WO2007079423A2 (en) 2005-12-30 2007-07-12 Dialight Corporation Method and apparatus for providing a light source that combines different color leds
JP4952884B2 (en) * 2006-01-24 2012-06-13 ソニー株式会社 Semiconductor light emitting device and semiconductor light emitting device assembly
WO2007105836A1 (en) * 2006-03-10 2007-09-20 Seoul Semiconductor Co., Ltd. Thiogallate phosphor and white light emitting device employing the same
US8323529B2 (en) 2006-03-16 2012-12-04 Seoul Semiconductor Co., Ltd. Fluorescent material and light emitting diode using the same
JP5068472B2 (en) 2006-04-12 2012-11-07 昭和電工株式会社 Method for manufacturing light emitting device
KR20140116536A (en) * 2006-05-31 2014-10-02 크리, 인코포레이티드 Lighting device and method of lighting
US7703945B2 (en) * 2006-06-27 2010-04-27 Cree, Inc. Efficient emitting LED package and method for efficiently emitting light
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
ATE541023T1 (en) * 2006-11-01 2012-01-15 Univ Wake Forest SOLID STATE LIGHTING COMPOSITIONS AND SYSTEMS
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
JP5367218B2 (en) 2006-11-24 2013-12-11 シャープ株式会社 Method for manufacturing phosphor and method for manufacturing light emitting device
TW201448263A (en) 2006-12-11 2014-12-16 Univ California Transparent light emitting diodes
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US7999283B2 (en) * 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
JP5368985B2 (en) 2007-07-09 2013-12-18 シャープ株式会社 Phosphor particles and light emitting device using the same
US8297061B2 (en) * 2007-08-02 2012-10-30 Cree, Inc. Optoelectronic device with upconverting luminophoric medium
KR101374897B1 (en) 2007-08-14 2014-03-17 서울반도체 주식회사 Led package with diffusion means
US11114594B2 (en) * 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US8167674B2 (en) 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
WO2009110285A1 (en) 2008-03-03 2009-09-11 シャープ株式会社 Light-emitting device
US8567973B2 (en) * 2008-03-07 2013-10-29 Intematix Corporation Multiple-chip excitation systems for white light emitting diodes (LEDs)
JP5216384B2 (en) * 2008-03-19 2013-06-19 株式会社東芝 Light emitting device
EP2257999B1 (en) * 2008-03-25 2014-10-01 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
US9287469B2 (en) * 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
JP5390516B2 (en) * 2008-05-19 2014-01-15 株式会社東芝 LINEAR WHITE LIGHT SOURCE, BACKLIGHT AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME
US20090290343A1 (en) * 2008-05-23 2009-11-26 Abl Ip Holding Inc. Lighting fixture
US7845825B2 (en) * 2009-12-02 2010-12-07 Abl Ip Holding Llc Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light
EP2301071B1 (en) * 2008-05-29 2019-05-08 Cree, Inc. Light source with near field mixing
KR101495071B1 (en) * 2008-06-24 2015-02-25 삼성전자 주식회사 Sub-mount, light emitting device using the same and fabricating method of sub-mount, fabricating method of light emitting device using the same
KR101582522B1 (en) * 2008-07-01 2016-01-06 코닌클리케 필립스 엔.브이. Close proximity collimator for led
US20100149222A1 (en) * 2008-07-10 2010-06-17 Corporation For Laser Optics Research Blue laser pumped green light source for displays
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
KR20100030470A (en) 2008-09-10 2010-03-18 삼성전자주식회사 Light emitting device and system providing white light with various color temperatures
US8405111B2 (en) * 2008-11-13 2013-03-26 National University Corporation Nagoya University Semiconductor light-emitting device with sealing material including a phosphor
US9000664B2 (en) 2009-04-06 2015-04-07 Sharp Kabushiki Kaisha Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
CN102630288B (en) 2009-09-25 2015-09-09 科锐公司 There is the lighting apparatus of low dazzle and high brightness levels uniformity
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9163802B2 (en) * 2009-12-02 2015-10-20 Abl Ip Holding Llc Lighting fixtures using solid state device and remote phosphors to produce white light
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
BR112012016731A2 (en) 2010-01-08 2018-05-15 Sharp Kabushiki Kaisaha "phosphorus, light-emitting apparatus and liquid crystal display apparatus using the same"
US8517550B2 (en) 2010-02-15 2013-08-27 Abl Ip Holding Llc Phosphor-centric control of color of light
US8205998B2 (en) * 2010-02-15 2012-06-26 Abl Ip Holding Llc Phosphor-centric control of solid state lighting
US9172006B2 (en) 2010-03-16 2015-10-27 Koninklijke Philips N.V. Lighting apparatus
WO2011128826A1 (en) * 2010-04-16 2011-10-20 Koninklijke Philips Electronics N.V. Lighting device
KR101164926B1 (en) 2010-08-16 2012-07-12 (주)아이셀론 Method for fabricating LED module
US20120106126A1 (en) * 2010-11-01 2012-05-03 Seiko Epson Corporation Wavelength conversion element, light source device, and projector
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
CN102646761B (en) * 2011-02-21 2014-10-15 展晶科技(深圳)有限公司 LED (light-emitting diode) packaging process
JP2012248553A (en) * 2011-05-25 2012-12-13 Panasonic Corp Light-emitting device and luminaire using the same
KR20130014256A (en) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 Light emitting device package and lighting system using the same
US9238773B2 (en) 2011-09-22 2016-01-19 Lawrence Livermore National Security, Llc Lutetium oxide-based transparent ceramic scintillators
JP6196018B2 (en) * 2012-01-19 2017-09-13 株式会社小糸製作所 Light emitting device
JP2015515734A (en) * 2012-04-26 2015-05-28 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ Method and apparatus for performing color consistency in remote wavelength conversion
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
WO2014006597A1 (en) * 2012-07-05 2014-01-09 Koninklijke Philips N.V. A stack of layers comprising luminescent material, a lamp, a luminaire and a method of manufacturing the stack of layers
DE102012109217A1 (en) * 2012-09-28 2014-04-03 Osram Opto Semiconductors Gmbh A lighting device for generating a light emission and a method for generating a light emission
JP2014139999A (en) 2013-01-21 2014-07-31 Toshiba Corp Semiconductor light-emitting device
WO2014159026A1 (en) * 2013-03-14 2014-10-02 X-Card Holdings, Llc Information carrying card for displaying one time passcodes, and method of making the same
US9274264B2 (en) 2013-05-09 2016-03-01 Htc Corporation Light source module
US9435933B2 (en) * 2013-05-09 2016-09-06 Htc Corporation Light source module and electronic device
US10439109B2 (en) 2013-08-05 2019-10-08 Corning Incorporated Luminescent coatings and devices
CN104716244A (en) * 2013-12-13 2015-06-17 鸿富锦精密工业（深圳）有限公司 White light LED encapsulation structure
TWI500984B (en) * 2014-02-11 2015-09-21 Htc Corp Light source module and electronic device
JP6224495B2 (en) 2014-03-19 2017-11-01 株式会社東芝 Semiconductor laser device
KR102223001B1 (en) * 2015-01-05 2021-03-04 삼성디스플레이 주식회사 Display device
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US10794569B2 (en) 2017-03-02 2020-10-06 Panasonic Intellectual Property Management Co., Ltd. Wavelength conversion member, light source and lighting device
KR102452484B1 (en) * 2017-08-11 2022-10-11 삼성전자주식회사 Light emitting device package and light emitting device pakage module
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10256376B1 (en) * 2018-01-16 2019-04-09 Leedarson Lighting Co. Ltd. LED device
CN108458323B (en) * 2018-02-14 2020-01-17 易事化控制设备股份有限公司 LED lamp bead fluorescent powder capable of reducing blue light harm, LED lamp bead and preparation method of LED lamp bead fluorescent powder
JP6912728B2 (en) * 2018-03-06 2021-08-04 日亜化学工業株式会社 Light emitting device and light source device
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
JP6912746B1 (en) * 2020-02-07 2021-08-04 日亜化学工業株式会社 Light emitting module and planar light source
CN111884048B (en) * 2020-07-31 2021-11-30 常州纵慧芯光半导体科技有限公司 Laser device and manufacturing method and application thereof
JPWO2022239653A1 (en) * 2021-05-14 2022-11-17

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593055A (en) * 1969-04-16 1971-07-13 Bell Telephone Labor Inc Electro-luminescent device
JPH04104453A (en) 1990-08-21 1992-04-06 Toshiba Lighting & Technol Corp Fluorescent lamp
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
EP1441395B9 (en) * 1996-06-26 2012-08-15 OSRAM Opto Semiconductors GmbH Light-emitting semiconductor device with luminescence conversion element
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP2000208822A (en) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP1142033A1 (en) * 1999-09-27 2001-10-10 LumiLeds Lighting U.S., LLC A light emitting diode device that produces white light by performing complete phosphor conversion
US6686691B1 (en) * 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
JP2001345482A (en) 2000-06-01 2001-12-14 Toshiba Corp Fluorescent display device
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
JP2002111072A (en) * 2000-09-29 2002-04-12 Toyoda Gosei Co Ltd Light-emitting device
JP2002118292A (en) * 2000-10-11 2002-04-19 Sanken Electric Co Ltd Semiconductor light-emitting device
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
DE10137042A1 (en) * 2001-07-31 2003-02-20 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planar light source based on LED
TW511303B (en) * 2001-08-21 2002-11-21 Wen-Jr He A light mixing layer and method
DE10146719A1 (en) * 2001-09-20 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009039801A1 (en) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Radiation-emitting component with conversion element

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ATE421169T1 (en) 2009-01-15
TW200409478A (en) 2004-06-01
EP1512181A2 (en) 2005-03-09
JP5951180B2 (en) 2016-07-13
WO2003107441A8 (en) 2004-04-29
DE60325851D1 (en) 2009-03-05
CN1675781A (en) 2005-09-28
EP1512181B1 (en) 2009-01-14
JP2011082568A (en) 2011-04-21
WO2003107441A9 (en) 2004-03-11
US20040012027A1 (en) 2004-01-22
CN100405620C (en) 2008-07-23
WO2003107441A3 (en) 2004-07-15
TWI329367B (en) 2010-08-21
MY138406A (en) 2009-05-29
JP2005530349A (en) 2005-10-06
AU2003238234A8 (en) 2003-12-31
AU2003238234A1 (en) 2003-12-31

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