CA2495309A1 - Semiconductor nanocrystal heterostructures - Google Patents
Semiconductor nanocrystal heterostructures Download PDFInfo
- Publication number
- CA2495309A1 CA2495309A1 CA002495309A CA2495309A CA2495309A1 CA 2495309 A1 CA2495309 A1 CA 2495309A1 CA 002495309 A CA002495309 A CA 002495309A CA 2495309 A CA2495309 A CA 2495309A CA 2495309 A1 CA2495309 A1 CA 2495309A1
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- Prior art keywords
- compound
- semiconductor material
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- nanocrystal
- iii
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004054 semiconductor nanocrystal Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 claims abstract 81
- 239000004065 semiconductor Substances 0.000 claims abstract 80
- 230000005284 excitation Effects 0.000 claims abstract 11
- 150000001875 compounds Chemical class 0.000 claims 80
- 239000002159 nanocrystal Substances 0.000 claims 60
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 12
- 229910004613 CdTe Inorganic materials 0.000 claims 11
- 229910007709 ZnTe Inorganic materials 0.000 claims 11
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims 10
- 229910017115 AlSb Inorganic materials 0.000 claims 10
- 229910002601 GaN Inorganic materials 0.000 claims 10
- 229910005540 GaP Inorganic materials 0.000 claims 10
- 229910005542 GaSb Inorganic materials 0.000 claims 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 10
- 229910004262 HgTe Inorganic materials 0.000 claims 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 10
- 229910002665 PbTe Inorganic materials 0.000 claims 10
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 10
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 10
- 239000000203 mixture Substances 0.000 claims 10
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 10
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims 10
- 239000012044 organic layer Substances 0.000 claims 7
- 229910017680 MgTe Inorganic materials 0.000 claims 6
- 229910005543 GaSe Inorganic materials 0.000 claims 4
- 150000002894 organic compounds Chemical class 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 1
- 239000011541 reaction mixture Substances 0.000 claims 1
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- G—PHYSICS
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- G01N33/588—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving labelled substances with semiconductor nanocrystal label, e.g. quantum dots
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- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- C30—CRYSTAL GROWTH
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- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2933—Coated or with bond, impregnation or core
- Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
- Y10T428/315—Surface modified glass [e.g., tempered, strengthened, etc.]
Abstract
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconducto r material. Upon excitation, one carrier can be substantially confined to the core and 5 the other carrier can be substantially confined to the overcoatin g.
Claims (54)
1. A method of preparing a coated nanocrystal comprising:
introducing a core nanocrystal including a first semiconductor material into an overcoating reaction mixture; and overcoating a second semiconductor material on the core nanocrystal, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating.
introducing a core nanocrystal including a first semiconductor material into an overcoating reaction mixture; and overcoating a second semiconductor material on the core nanocrystal, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating.
2. The method of claim 1, wherein the conduction band of the first semiconductor material is at higher energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at higher energy than the valence band of the second semiconductor material.
3. The method of claim 1, wherein the conduction band of the first semiconductor material is at lower energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at lower energy than the valence band of the second semiconductor material.
4. The method of claim 1, wherein the nanocrystal further comprises an organic layer on a surface of the coated nanocrystal.
5. The method of claim 1, further comprising exposing the nanocrystal to an organic compound having affinity for a surface of the coated nanocrystal.
6. The method of claim 1, wherein the coated nanocrystal is dispersible in a liquid.
7. The method of claim 1, where in the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
8. The method of claim 1, wherein the first semiconductor material is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
9. The method of claim 1, wherein the second semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
10. The method of claim 1, wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TISb, PbS, PbSe, PbTe, or mixtures thereof.
11. The method of claim 1, wherein the first semiconductor material is CdTe and the second semiconductor material is CdSe.
12. The method of claim 1, wherein the first semiconductor material is CdSe and the second semiconductor material is ZnTe.
13. The method of claim 1, further comprising overcoating a third semiconductor material on the second semiconductor material.
14. The method of claim 13, wherein the third semiconductor material has a mismatched band offset compared to the second semiconductor material.
15. The method of claim 13, wherein the third semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group TI-IV-VI compound, or a Group II-IV-V compound.
16. The method of claim 13, wherein the third semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
17. A coated nanocrystal comprising:
a core nanocrystal including a first semiconductor material;
an overcoating including a second semiconductor material on the core nanocrystal; and an organic layer on a surface of the coated nanocrystal, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating.
a core nanocrystal including a first semiconductor material;
an overcoating including a second semiconductor material on the core nanocrystal; and an organic layer on a surface of the coated nanocrystal, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating.
18. The nanocrystal of claim 17, wherein the conduction band of the first semiconductor material is at higher energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at higher energy than the valence band of the second semiconductor material.
19. The nanocrystal of claim 17, wherein the conduction band of the first semiconductor material is at lower energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at lower energy than the valence band of the second semiconductor material.
20. The nanocrystal of claim 17, wherein the organic layer is obtained by exposing the nanocrystal to an organic compound having affinity for a surface of the coated nanocrystal.
21. The nanocrystal of claim 17, wherein the coated nanocrystal is dispersible.
22. The nanocrystal of claim 17, where in the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
23. The nanocrystal of claim 17, wherein the first semiconductor material ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
24. The nanocrystal of claim 17, wherein the second semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI
compound, a Group III-V compound, a Group IV-VI compound, a Crroup I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
compound, a Group III-V compound, a Group IV-VI compound, a Crroup I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
25. The nanocrystal of claim 17, wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
26. The nanocrystal of claim 17, wherein the nanocrystal emits light upon excitation, wherein the wavelength of maximum emission intensity is longer than 700 nm.
27. The nanocrystal of claim 17, wherein the nanocrystal emits light upon excitation, wherein the wavelength of maximum emission intensity is between nm and 1500 nm.
28. A population of coated nanocrystals comprising:
a plurality of coated nanocrystals, each coated nanocrystal including a core nanocrystal and an overcoating on each core nanocrystal, wherein each core includes a first semiconductor material and each overcoating includes a second semiconductor material, the plurality of core nanocrystals forming a population of nanocrystals, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating;
and the plurality of nanocrystals is monodisperse.
a plurality of coated nanocrystals, each coated nanocrystal including a core nanocrystal and an overcoating on each core nanocrystal, wherein each core includes a first semiconductor material and each overcoating includes a second semiconductor material, the plurality of core nanocrystals forming a population of nanocrystals, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the overcoating;
and the plurality of nanocrystals is monodisperse.
29. The population of claim 28, wherein the conduction band of the first semiconductor material is at higher energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at higher energy than the valence band of the second semiconductor material.
30. The population of claim 28, wherein the conduction band of the first semiconductor material is at lower energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at lower energy than the valence band of the second semiconductor material.
31. The population of claim 28, further comprising an organic layer on a surface of each coated nanocrystal.
32. The population of claim 31, wherein the organic layer is obtained by exposing the population to an organic compound having affinity for a surface of a coated nanocrystal.
33. The population of claim 28, where in the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
34. The population of claim 28, wherein the first semiconductor material is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
35. The population of claim 28, wherein the second semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI
compound, a Group III-V compound, a Group IV-VI compound, a,Group I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
compound, a Group III-V compound, a Group IV-VI compound, a,Group I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
36. The population of claim 28, wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
37. The population of claim 28, wherein the population emits light upon excitation, wherein the wavelength of maximum emission intensity is longer than 700 nm.
38. The population of claim 28, wherein the population emits light upon excitation, wherein the wavelength of maximum emission intensity is between nm and 1500 nm.
39. A coated nanocrystal comprising:
a core nanocrystal including a first semiconductor material;
a first overcoating including a second semiconductor material on the core nanocrystal; and a second overcoating including a third semiconductor material on the first overcoating.
a core nanocrystal including a first semiconductor material;
a first overcoating including a second semiconductor material on the core nanocrystal; and a second overcoating including a third semiconductor material on the first overcoating.
40. The nanocrystal of claim 39, wherein the first semiconductor material and the second semiconductor material are selected so that, upon excitation, one carrier is substantially confined to the core and the other carrier is substantially confined to the first overcoating.
41. The nanocrystal of claim 39, wherein the conduction band of the first semiconductor material is at higher energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at higher energy than the valence band of the second semiconductor material.
42. The nanocrystal of claim 39, wherein the conduction band of the first semiconductor material is at lower energy than the conduction band of the second semiconductor material and the valence band of the first semiconductor material is at lower energy than the valence band of the second semiconductor material.
43. The nanocrystal of claim 39, wherein the third semiconductor material has a mismatched band offset to the second semiconductor material.
44. The nanocrystal of claim 39, further comprising an organic layer on a surface of the coated nanocrystal.
45. The nanocrystal of claim 44, wherein the organic layer is obtained by exposing the nanocrystal to an organic compound having affinity for a surface of the coated nanocrystal.
46. The nanocrystal of claim 39, where in the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
47. The nanocrystal of claim 39, wherein the first semiconductor material is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof
48. The nanocrystal of claim 39, wherein the second semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI
compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI
compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
49. The nanocrystal of claim 39, wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
50. The nanocrystal of claim 39, wherein the third semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
51. The nanocrystal of claim 39, wherein the third semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
52. The nanocrystal of claim 39, wherein the nanocrystal emits light upon excitation, wherein the wavelength of maximum emission intensity is longer than 700 nm.
53. The nanocrystal of claim 39, wherein the nanocrystal emits light upon excitation, wherein the wavelength of maximum emission intensity is between nm and 1500 nm.
54. The nanocrystal of claim 53, wherein the quantum efficiency is greater than 10%.
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40272602P | 2002-08-13 | 2002-08-13 | |
US60/402,726 | 2002-08-13 | ||
PCT/US2003/025174 WO2004053929A2 (en) | 2002-08-13 | 2003-08-12 | Semiconductor nanocrystal heterostructures |
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US (4) | US7390568B2 (en) |
EP (2) | EP2336409B1 (en) |
JP (2) | JP4931348B2 (en) |
AT (1) | ATE488625T1 (en) |
AU (1) | AU2003302316A1 (en) |
CA (1) | CA2495309C (en) |
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Families Citing this family (124)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60335001D1 (en) * | 2002-08-13 | 2010-12-30 | Massachusetts Inst Technology | SEMICONDUCTOR NANO CRYSTAL HETEROFLEXIBLE STRUCTURES |
US7767260B2 (en) * | 2003-01-22 | 2010-08-03 | The Board Of Trustees Of The University Of Arkansas | Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
US7229497B2 (en) * | 2003-08-26 | 2007-06-12 | Massachusetts Institute Of Technology | Method of preparing nanocrystals |
US7303628B2 (en) * | 2004-03-23 | 2007-12-04 | The Regents Of The University Of California | Nanocrystals with linear and branched topology |
WO2005101530A1 (en) | 2004-04-19 | 2005-10-27 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
US7742322B2 (en) * | 2005-01-07 | 2010-06-22 | Invisage Technologies, Inc. | Electronic and optoelectronic devices with quantum dot films |
US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
US7746681B2 (en) | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
GB0409877D0 (en) | 2004-04-30 | 2004-06-09 | Univ Manchester | Preparation of nanoparticle materials |
US20070045777A1 (en) * | 2004-07-08 | 2007-03-01 | Jennifer Gillies | Micronized semiconductor nanocrystal complexes and methods of making and using same |
US7316967B2 (en) * | 2004-09-24 | 2008-01-08 | Massachusetts Institute Of Technology | Flow method and reactor for manufacturing noncrystals |
US10225906B2 (en) * | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US7368086B2 (en) * | 2004-10-29 | 2008-05-06 | Invitrogen Corporation | Functionalized fluorescent nanocrystals, and methods for their preparation and use |
US9637682B2 (en) | 2004-11-11 | 2017-05-02 | Samsung Electronics Co., Ltd. | Interfused nanocrystals and method of preparing the same |
EP1666562B1 (en) * | 2004-11-11 | 2018-03-07 | Samsung Electronics Co., Ltd. | Interfused nanocrystals and method of preparing the same |
JP4565153B2 (en) * | 2004-11-19 | 2010-10-20 | 独立行政法人産業技術総合研究所 | Low temperature synthesis of nanoparticles |
JP4538646B2 (en) * | 2004-11-22 | 2010-09-08 | 独立行政法人産業技術総合研究所 | Method for producing highly efficient phosphor |
US8891575B2 (en) * | 2004-11-30 | 2014-11-18 | Massachusetts Institute Of Technology | Optical feedback structures and methods of making |
CA2519608A1 (en) | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
US8134175B2 (en) * | 2005-01-11 | 2012-03-13 | Massachusetts Institute Of Technology | Nanocrystals including III-V semiconductors |
WO2006116337A2 (en) * | 2005-04-25 | 2006-11-02 | Board Of Trustees Of The University Of Arkansas | Doped semiconductor nanocrystals and methods of making same |
US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9297092B2 (en) | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007103310A2 (en) | 2006-03-07 | 2007-09-13 | Qd Vision, Inc. | An article including semiconductor nanocrystals |
US8845927B2 (en) * | 2006-06-02 | 2014-09-30 | Qd Vision, Inc. | Functionalized nanoparticles and method |
GB2472541B (en) * | 2005-08-12 | 2011-03-23 | Nanoco Technologies Ltd | Nanoparticles |
KR101159853B1 (en) * | 2005-09-12 | 2012-06-25 | 삼성전기주식회사 | Method of Preparing the Multishell Nanocrystals and the Multishell Nanocrystals obtained using the Same |
GB0522027D0 (en) * | 2005-10-28 | 2005-12-07 | Nanoco Technologies Ltd | Controlled preparation of nanoparticle materials |
US7414294B2 (en) * | 2005-12-16 | 2008-08-19 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix |
US7394094B2 (en) * | 2005-12-29 | 2008-07-01 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
TWI273719B (en) * | 2005-12-30 | 2007-02-11 | Ind Tech Res Inst | Nanocrystal and photovoltaics applying the same |
EP1978072A4 (en) * | 2006-01-27 | 2009-04-08 | Konica Minolta Med & Graphic | Semiconductor nanoparticle having core/shell structure and process for producing the same |
WO2007086188A1 (en) * | 2006-01-30 | 2007-08-02 | Konica Minolta Medical & Graphic, Inc. | Triple-layer semiconductor nanoparticle and triple-layer semiconductor nanorod |
WO2007092606A2 (en) * | 2006-02-09 | 2007-08-16 | Qd Vision, Inc. | Displays including semiconductor nanocrystals and methods of making same |
EP1999797A4 (en) * | 2006-02-09 | 2010-11-24 | Qd Vision Inc | Device including semiconductor nanocrystals and a layer including a doped organic material and methods |
US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
US20080038558A1 (en) * | 2006-04-05 | 2008-02-14 | Evident Technologies, Inc. | I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same |
WO2007117698A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Composition including material, methods of depositing material, articles including same and systems for depositing material |
US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
US9212056B2 (en) | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
WO2007143227A2 (en) * | 2006-06-10 | 2007-12-13 | Qd Vision, Inc. | Materials,thin films,optical filters, and devices including same |
WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
WO2008108798A2 (en) | 2006-06-24 | 2008-09-12 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices |
WO2008105792A2 (en) * | 2006-06-24 | 2008-09-04 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions |
US8643058B2 (en) | 2006-07-31 | 2014-02-04 | Massachusetts Institute Of Technology | Electro-optical device including nanocrystals |
DE102006043119A1 (en) * | 2006-09-08 | 2008-03-27 | Bundesdruckerei Gmbh | Security and / or value document with a type II semiconductor contact system |
WO2008085210A2 (en) * | 2006-09-12 | 2008-07-17 | Qd Vision, Inc. | Electroluminescent display useful for displaying a predetermined pattern |
WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
JP5131195B2 (en) * | 2006-09-15 | 2013-01-30 | コニカミノルタエムジー株式会社 | Semiconductor nanoparticles and manufacturing method thereof |
WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
WO2008133660A2 (en) * | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
US8563348B2 (en) * | 2007-04-18 | 2013-10-22 | Nanoco Technologies Ltd. | Fabrication of electrically active films based on multiple layers |
US20080264479A1 (en) | 2007-04-25 | 2008-10-30 | Nanoco Technologies Limited | Hybrid Photovoltaic Cells and Related Methods |
US8098700B2 (en) * | 2007-05-17 | 2012-01-17 | Los Alamos National Security, Llc | Single-exciton nanocrystal laser |
JP5773646B2 (en) | 2007-06-25 | 2015-09-02 | キユーデイー・ビジヨン・インコーポレーテツド | Compositions and methods comprising depositing nanomaterials |
US20110059467A1 (en) | 2007-06-26 | 2011-03-10 | Massachusetts Institute Of Technology | Controlled modification of semiconductor nanocrystals |
WO2009002551A1 (en) * | 2007-06-26 | 2008-12-31 | Qd Vision, Inc. | Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots |
EP2193468B1 (en) * | 2007-09-26 | 2019-03-27 | Massachusetts Institute of Technology | High-resolution 3d imaging of single semiconductor nanocrystals |
US8784701B2 (en) | 2007-11-30 | 2014-07-22 | Nanoco Technologies Ltd. | Preparation of nanoparticle material |
US9748422B2 (en) * | 2008-01-23 | 2017-08-29 | Massachusetts Institute Of Technology | Semiconductor nanocrystals |
CA2716552C (en) * | 2008-02-25 | 2016-02-02 | Nanoco Technologies Limited | Semiconductor nanoparticle capping agents |
CN102047098B (en) | 2008-04-03 | 2016-05-04 | Qd视光有限公司 | Comprise the luminescent device of quantum dot |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
US8865477B2 (en) * | 2008-04-22 | 2014-10-21 | Drexel University | Water soluble nanocrystalline quantum dots capable of near infrared emissions |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
US8765223B2 (en) | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
US8507040B2 (en) | 2008-05-08 | 2013-08-13 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
CN102105554A (en) * | 2008-06-10 | 2011-06-22 | 阿肯色大学托管委员会 | Indium arsenide nanocrystals and methods of making the same |
GB0813273D0 (en) * | 2008-07-19 | 2008-08-27 | Nanoco Technologies Ltd | Method for producing aqueous compatible nanoparticles |
GB0814458D0 (en) * | 2008-08-07 | 2008-09-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
EP2335272A4 (en) * | 2008-09-03 | 2012-06-20 | Univ Emory | Quantum dots, methods of making quantum dots, and methods of using quantum dots |
WO2010040074A2 (en) * | 2008-10-03 | 2010-04-08 | Life Technologies Corporation | Compositions and methods for functionalizing or crosslinking ligands on nanoparticle surfaces |
GB0820101D0 (en) * | 2008-11-04 | 2008-12-10 | Nanoco Technologies Ltd | Surface functionalised nanoparticles |
GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
GB0901857D0 (en) * | 2009-02-05 | 2009-03-11 | Nanoco Technologies Ltd | Encapsulated nanoparticles |
US10173454B2 (en) * | 2009-02-17 | 2019-01-08 | Bundesdruckerei Gmbh | Security and/or value document having a type II semiconductor contact system |
WO2010129350A2 (en) | 2009-04-28 | 2010-11-11 | Qd Vision, Inc. | Optical materials, optical, components, devices, and methods |
KR20120062773A (en) | 2009-08-14 | 2012-06-14 | 큐디 비젼, 인크. | Lighting devices, an optical component for a lighting device, and methods |
GB0916699D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
US9425253B2 (en) | 2009-09-23 | 2016-08-23 | Crystalplex Corporation | Passivated nanoparticles |
KR101791580B1 (en) | 2009-10-17 | 2017-10-30 | 삼성전자주식회사 | An optical component, products including same, and methods for making same |
CA2781043A1 (en) | 2009-11-16 | 2011-05-19 | Emory University | Lattice-mismatched core-shell quantum dots |
WO2011119654A1 (en) * | 2010-03-23 | 2011-09-29 | Massachusetts Institute Of Technology | Ligands for semiconductor nanocrystals |
US10202546B2 (en) | 2010-03-23 | 2019-02-12 | Massachusetts Institute Of Technology | Ligands for semiconductor nanocrystals |
BR112012024495B1 (en) * | 2010-03-29 | 2020-05-19 | Koninl Philips Electronics Nv | solar energy generator and method of making a luminescent converter |
GB201005601D0 (en) | 2010-04-01 | 2010-05-19 | Nanoco Technologies Ltd | Ecapsulated nanoparticles |
EP2560917A4 (en) * | 2010-04-23 | 2014-04-09 | Purdue Research Foundation | Ultrathin nanowire-based and nanoscale heterostructure-based thermoelectric conversion structures and method of making same |
US10174243B2 (en) | 2010-08-24 | 2019-01-08 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
US8399939B2 (en) | 2010-12-03 | 2013-03-19 | Massachusetts Institute Of Technology | Color selective photodetector and methods of making |
CN102104079B (en) * | 2010-12-21 | 2012-05-23 | 中国科学院理化技术研究所 | Preparation method of nano array with one-dimensional ZnO/ZnS nuclear shell structure and monocrystal ZnS nanotube array |
CN102104078B (en) * | 2010-12-21 | 2012-03-28 | 中国科学院理化技术研究所 | Method for preparing one-dimensional nanometer material with ZnO/ZnS core-shell structure and single crystal ZnS nanotube |
US9403154B2 (en) * | 2011-03-22 | 2016-08-02 | Monash University | Catalysts and methods of use |
EP3929965A1 (en) * | 2011-06-20 | 2021-12-29 | Crystalplex Corporation | Stabilized nanocrystals |
CN102263036A (en) * | 2011-07-01 | 2011-11-30 | 新疆大学 | Method for preparing CdS/ZnS nanometer wire heterojunction |
WO2013089843A2 (en) * | 2011-09-02 | 2013-06-20 | The California Institute Of Technology | Photovoltaic semiconductive materials |
FR2981790A1 (en) * | 2011-10-19 | 2013-04-26 | Solarwell | METHOD FOR GROWTH IN THICKNESS OF COLLOIDAL SHEETS AND MATERIALS COMPOSED OF SHEETS |
FR2981791A1 (en) * | 2011-10-19 | 2013-04-26 | Solarwell | METHOD FOR GROWTH IN LAYER THICKNESS OF COLLOIDAL SHEETS AND MATERIALS COMPOSED OF SHEETS |
WO2013078247A1 (en) | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same |
US10008631B2 (en) * | 2011-11-22 | 2018-06-26 | Samsung Electronics Co., Ltd. | Coated semiconductor nanocrystals and products including same |
US8937373B2 (en) * | 2012-01-11 | 2015-01-20 | Massachusetts Institute Of Technology | Highly luminescent II-V semiconductor nanocrystals |
CN104205368B (en) * | 2012-02-05 | 2018-08-07 | 三星电子株式会社 | Semiconductor nanocrystal, preparation method, composition and product |
CN102800747A (en) * | 2012-07-11 | 2012-11-28 | 上海大学 | Preparation method of ZnS-cladded ZnO nanoarray core-shell structure |
US20140060639A1 (en) | 2012-08-31 | 2014-03-06 | OneSun, LLC | Copper oxide core/shell nanocrystals for use in photovoltaic cells |
US9076712B2 (en) * | 2012-09-04 | 2015-07-07 | Massachusetts Institute Of Technology | Solid state cloaking for electrical charge carrier mobility control |
US9123638B2 (en) | 2013-03-15 | 2015-09-01 | Rohm And Haas Electronic Materials, Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
US9617472B2 (en) | 2013-03-15 | 2017-04-11 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same |
US20150243837A1 (en) * | 2013-03-15 | 2015-08-27 | Moonsub Shim | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
US8937294B2 (en) | 2013-03-15 | 2015-01-20 | Rohm And Haas Electronic Materials Llc | Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
EP3148712B1 (en) | 2014-05-29 | 2021-08-18 | Crystalplex Corporation | Dispersion system for quantum dots |
KR102480086B1 (en) * | 2016-01-11 | 2022-12-23 | 삼성디스플레이 주식회사 | Display apparatus and method for manufacturing the same |
WO2017201465A1 (en) | 2016-05-19 | 2017-11-23 | Crystalplex Corporation | Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3d structure containing them and methods of making and using them |
KR102556011B1 (en) * | 2018-01-23 | 2023-07-14 | 삼성디스플레이 주식회사 | Semiconductor nanoparticles, and display device and organic light emitting display device comprising the same |
CN109979643B (en) * | 2018-02-28 | 2020-05-08 | 华南师范大学 | ZnO/ZnSe/CdSe/MoS2Preparation method and application of core-shell structure film electrode |
EP3536762B1 (en) * | 2018-03-09 | 2021-05-05 | Samsung Electronics Co., Ltd. | Quantum dots and devices including the same |
US10456776B1 (en) * | 2019-02-21 | 2019-10-29 | King Saud University | Method of fabricating a photocatalyst for water splitting |
US11387423B2 (en) | 2020-03-25 | 2022-07-12 | Henan University | Non-blinking quantum dot, preparation method thereof, and quantum dot-based light-emitting diode |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4882609A (en) * | 1984-11-19 | 1989-11-21 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. | Semiconductor devices with at least one monoatomic layer of doping atoms |
JPS63178194A (en) * | 1987-01-19 | 1988-07-22 | Tosoh Corp | Microencapsulated alkaline earth metal sulfide phosphor |
AU636396B2 (en) * | 1989-09-04 | 1993-04-29 | British Telecommunications Public Limited Company | Quantum well structures |
US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
US5081511A (en) * | 1990-09-06 | 1992-01-14 | Motorola, Inc. | Heterojunction field effect transistor with monolayers in channel region |
US5262357A (en) * | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
EP0613585A4 (en) * | 1991-11-22 | 1995-06-21 | Univ California | Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers. |
US5505928A (en) * | 1991-11-22 | 1996-04-09 | The Regents Of University Of California | Preparation of III-V semiconductor nanocrystals |
JPH0817231B2 (en) * | 1992-01-29 | 1996-02-21 | 東京工業大学長 | Tissue-doped structure semiconductor device |
US5515393A (en) * | 1992-01-29 | 1996-05-07 | Sony Corporation | Semiconductor laser with ZnMgSSe cladding layers |
AU4378893A (en) * | 1992-05-22 | 1993-12-30 | Minnesota Mining And Manufacturing Company | Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy |
US5293050A (en) * | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
US6048616A (en) * | 1993-04-21 | 2000-04-11 | Philips Electronics N.A. Corp. | Encapsulated quantum sized doped semiconductor particles and method of manufacturing same |
JPH0750448A (en) | 1993-08-04 | 1995-02-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser and manufacture thereof |
US5492080A (en) * | 1993-12-27 | 1996-02-20 | Matsushita Electric Industrial Co., Ltd. | Crystal-growth method and semiconductor device production method using the crystal-growth method |
US5422489A (en) * | 1994-01-24 | 1995-06-06 | Bhargava; Rameshwar N. | Light emitting device |
US5448582A (en) * | 1994-03-18 | 1995-09-05 | Brown University Research Foundation | Optical sources having a strongly scattering gain medium providing laser-like action |
US5881886A (en) | 1994-03-18 | 1999-03-16 | Brown University Research Foundation | Optically-based methods and apparatus for sorting garments and other textiles |
US5434878A (en) * | 1994-03-18 | 1995-07-18 | Brown University Research Foundation | Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers |
GB2289150B (en) | 1994-04-25 | 1998-07-15 | Univ Hertfordshire | Coded items for labelling objects |
US5537000A (en) * | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
US5449260A (en) * | 1994-06-10 | 1995-09-12 | Whittle; Weldon M. | Tamper-evident bolt |
US5677545A (en) * | 1994-09-12 | 1997-10-14 | Motorola | Organic light emitting diodes with molecular alignment and method of fabrication |
WO1996014206A1 (en) * | 1994-11-08 | 1996-05-17 | Spectra Science Corporation | Semiconductor nanocrystal display materials and display apparatus employing same |
US5541948A (en) * | 1994-11-28 | 1996-07-30 | The Regents Of The University Of California | Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers |
US5985353A (en) * | 1994-12-01 | 1999-11-16 | University Of Massachusetts Lowell | Biomolecular synthesis of quantum dot composites |
US5585640A (en) * | 1995-01-11 | 1996-12-17 | Huston; Alan L. | Glass matrix doped with activated luminescent nanocrystalline particles |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
GB9518910D0 (en) * | 1995-09-15 | 1995-11-15 | Imperial College | Process |
US6323989B1 (en) * | 1996-07-19 | 2001-11-27 | E Ink Corporation | Electrophoretic displays using nanoparticles |
ES2287956T3 (en) | 1996-07-29 | 2007-12-16 | Nanosphere Inc. | NANOPARTICLES THAT HAVE OLIGONUCLEOTIDES UNITED TO THE SAME AND USES OF THE SAME. |
US5908608A (en) | 1996-11-08 | 1999-06-01 | Spectra Science Corporation | Synthesis of metal chalcogenide quantum |
US5939021A (en) | 1997-01-23 | 1999-08-17 | Hansen; W. Peter | Homogeneous binding assay |
WO1998036376A1 (en) | 1997-02-18 | 1998-08-20 | Spectra Science Corporation | Field activated security thread including polymer dispersed liquid crystal |
AUPP004497A0 (en) * | 1997-10-28 | 1997-11-20 | University Of Melbourne, The | Stabilized particles |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
US5985173A (en) * | 1997-11-18 | 1999-11-16 | Gray; Henry F. | Phosphors having a semiconductor host surrounded by a shell |
US5990479A (en) * | 1997-11-25 | 1999-11-23 | Regents Of The University Of California | Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US6139585A (en) * | 1998-03-11 | 2000-10-31 | Depuy Orthopaedics, Inc. | Bioactive ceramic coating and method |
US6251303B1 (en) * | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
JP2000104058A (en) * | 1998-09-28 | 2000-04-11 | Sony Corp | Production of luminescent material |
US6332901B1 (en) * | 1998-10-12 | 2001-12-25 | Toyota Jidosha Kabushiki Kaisha | Carbon monoxide reducing device for reducing carbon monoxide in a reformate gas |
US6114038A (en) * | 1998-11-10 | 2000-09-05 | Biocrystal Ltd. | Functionalized nanocrystals and their use in detection systems |
WO2000028598A1 (en) * | 1998-11-10 | 2000-05-18 | Biocrystal Limited | Methods for identification and verification |
US6592842B2 (en) * | 1999-10-01 | 2003-07-15 | Battelle Memorial Institute | Nanocrystalline heterojunction materials |
EP1264375A2 (en) * | 2000-03-14 | 2002-12-11 | Massachusetts Institute Of Technology | Optical amplifiers and lasers |
JP2002020740A (en) * | 2000-05-01 | 2002-01-23 | Mitsubishi Chemicals Corp | Semiconductive crystal ultrafine particle having ligand with hyperbranched structure |
IL138471A0 (en) * | 2000-09-14 | 2001-10-31 | Yissum Res Dev Co | Novel semiconductor materials and their uses |
ATE491230T1 (en) | 2000-10-04 | 2010-12-15 | Univ Arkansas | SYNTHESIS OF COLLOIDAL METAL CHALCOGENIDE NANOCRYSTALS |
US6576291B2 (en) * | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
US6882051B2 (en) * | 2001-03-30 | 2005-04-19 | The Regents Of The University Of California | Nanowires, nanostructures and devices fabricated therefrom |
WO2003092043A2 (en) * | 2001-07-20 | 2003-11-06 | Quantum Dot Corporation | Luminescent nanoparticles and methods for their preparation |
DE60335001D1 (en) * | 2002-08-13 | 2010-12-30 | Massachusetts Inst Technology | SEMICONDUCTOR NANO CRYSTAL HETEROFLEXIBLE STRUCTURES |
US7253452B2 (en) * | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
US7394094B2 (en) * | 2005-12-29 | 2008-07-01 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
US7807265B2 (en) * | 2006-05-12 | 2010-10-05 | University Of Central Florida Research Foundation, Inc. | Partially passivated quantum dots, process for making, and sensors therefrom |
-
2003
- 2003-08-12 DE DE60335001T patent/DE60335001D1/en not_active Expired - Lifetime
- 2003-08-12 EP EP10188259.5A patent/EP2336409B1/en not_active Expired - Lifetime
- 2003-08-12 AU AU2003302316A patent/AU2003302316A1/en not_active Abandoned
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- 2003-08-12 US US10/638,546 patent/US7390568B2/en not_active Expired - Lifetime
- 2003-08-12 WO PCT/US2003/025174 patent/WO2004053929A2/en active Search and Examination
- 2003-08-12 JP JP2004559043A patent/JP4931348B2/en not_active Expired - Lifetime
- 2003-08-12 CA CA2495309A patent/CA2495309C/en not_active Expired - Lifetime
- 2003-08-12 EP EP03810871A patent/EP1537263B1/en not_active Expired - Lifetime
-
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- 2008-06-12 US US12/213,001 patent/US7825405B2/en not_active Expired - Lifetime
-
2010
- 2010-09-22 US US12/888,161 patent/US8277942B2/en not_active Expired - Lifetime
-
2011
- 2011-12-06 JP JP2011266358A patent/JP2012102011A/en active Pending
-
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- 2012-08-24 US US13/594,719 patent/US9410959B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2003302316A1 (en) | 2004-06-30 |
DE60335001D1 (en) | 2010-12-30 |
EP2336409A2 (en) | 2011-06-22 |
US7825405B2 (en) | 2010-11-02 |
EP1537263A2 (en) | 2005-06-08 |
JP4931348B2 (en) | 2012-05-16 |
US20120319054A1 (en) | 2012-12-20 |
US8277942B2 (en) | 2012-10-02 |
US9410959B2 (en) | 2016-08-09 |
US20090301564A1 (en) | 2009-12-10 |
WO2004053929A2 (en) | 2004-06-24 |
JP2012102011A (en) | 2012-05-31 |
WO2004053929A3 (en) | 2005-01-27 |
CA2495309C (en) | 2011-11-08 |
EP1537263B1 (en) | 2010-11-17 |
ATE488625T1 (en) | 2010-12-15 |
US20040110002A1 (en) | 2004-06-10 |
US20110012061A1 (en) | 2011-01-20 |
JP2006508012A (en) | 2006-03-09 |
US7390568B2 (en) | 2008-06-24 |
EP2336409B1 (en) | 2023-05-10 |
EP1537263A4 (en) | 2008-07-02 |
EP2336409A3 (en) | 2011-11-02 |
AU2003302316A8 (en) | 2004-06-30 |
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