CA2515287A1 - Reflective ohmic contact for silicon carbide, light emitting diode in including the same, and manufacturing method - Google Patents
Reflective ohmic contact for silicon carbide, light emitting diode in including the same, and manufacturing method Download PDFInfo
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- CA2515287A1 CA2515287A1 CA002515287A CA2515287A CA2515287A1 CA 2515287 A1 CA2515287 A1 CA 2515287A1 CA 002515287 A CA002515287 A CA 002515287A CA 2515287 A CA2515287 A CA 2515287A CA 2515287 A1 CA2515287 A1 CA 2515287A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
Abstract
Reflective ohmic contacts for n-type silicon carbide include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. A reflector layer is on the layer consisting essentially of nickel, opposite the silicon carbide. A barrier layer is on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer is on the barrier layer opposite the reflector layer. It has been found that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.
Description
REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING
A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF
FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING
THE SAME
Field of the Invention This invention relates to silicon carbide-based microelectronic devices and fabrication methods therefor, and more particularly to silicon carbide-based light emitting devices such as Light Emitting Diodes (LEDs) and laser diodes and fabrication methods therefor.
Background of the Invention Light emitting diodes are widely used in consumer and commercial applications. As is well known to those having skill in the art, a light emitting diode generally includes a diode region on a microelectronic substrate. The microelectronic substrate may comprise, for example, silicon, gallium arsenide, gallium phosphide, alloys thereof, silicon carbide and/or sapphire. Continued developments in LEDs have resulted in highly efficient and mechanically robust light sources that can cover the visible spectrum and beyond. These attributes, coupled with the potentially long service life of solid state devices, may enable a variety of new display applications, and may place LEDs in a position to compete with the well entrenched incandescent and fluorescent lamps.
In fabricating light emitting devices, such as LEDs andlor laser diodes, using silicon carbide, it may be desirable to provide a reflective ohmic contact to the silicon carbide, and more specifically to n-type silicon carbide. These reflective ohmic contacts should be simple to fabricate using conventional microelectronic fabrication techniques, and should provide low ohmic losses and/or high reflectivity.
These contacts also should be amenable to wire bonding and/or submount bonding thereto.
Summary of the Invention Reflective ohmic contacts for silicon carbide and, in some embodiments, for n-type silicon carbide, according to some embodiments of the present invention, include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. It will be understood that, as used herein, the layer consisting essentially of nickel contains substantially only elemental nickel, and does not contain substantial amounts of nickel alloys, nickel oxides and/or other nickel compounds, but may contain insubstantial amounts of impurities ordinarily associated with nickel, including insubstantial amounts of the above-described alloys or compounds and may also contain insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the elemental nickel as an ohmic contact to the silicon carbide that also allow transmission therethrough of optical radiation that emerges from the silicon carbide. Reflective ohmic contacts according to embodiments of the present invention also include a reflector layer on the layer consisting essentially of nickel, opposite the silicon carbide, a barrier layer on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer on the barrier layer opposite the reflector layer. It has been found, according to some embodiments of the present invention, that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.
In other embodiments of the present invention, the layer consisting essentially of nickel is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the silicon carbide. In yet other embodiments, the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer consisting essentially of nickel. Moreover, in other embodiments of the present invention, the silicon carbide includes a surface and a layer consisting essentially of nickel covers the surface. By covering the surface, adhesion of the nickel to the silicon carbide may be enhanced, and reflectivity of substantially all of the optical radiation that emerges from the silicon carbide may be provided. In still other embodiments, the layer consisting essentially of nickel covers only a portion of the surface and/or may be patterned, for example to form a grid.
Other embodiments of the present invention provide the reflective ohmic contact on the first face of a silicon carbide substrate and a light emitting region on a second face of the silicon carbide substrate, to provide a light emitting element such as an LED or a laser. Moreover, in other embodiments, a mounting assembly is provided on the bonding layer opposite the barrier layer. In yet other embodiments, a wire bond is provided to the bonding layer. Other external elements also may be bonded to the bonding layer.
In some embodiments of the present invention, the layer consisting essentially of nickel is a layer consisting of unannealed nickel. Moreover, in some embodiments, the layer consisting essentially of nickel is between about 1 SA and about l OOA thick.
In other embodiments, the layer consisting essentially of nickel is between about 151 and about 25A thick. In still other embodiments, the layer consisting essentially of nickel is about 15~ thick and, in yet other embodiments, the layer consisting essentially of nickel is about 25th thick.
In some embodiments of the invention, the reflector layer comprises silver and/or aluminum. In some embodiments of the present invention, this layer is between about 7001 and about 2~m thick. In other embodiments, this layer is at least about 700A thick. In still other embodiments, this layer is about 1000A thick.
In some embodiments of the present invention, the barrier layer comprises platinum. In some embodiments, this layer is between about 2501 and about 1 ~,m thick. In other embodiments, this layer is at least about 250A thick. In other embodiments, this layer is about SOOA thick and, in still other embodiments, this layer is about 1000 thick.
In some embodiments of the invention, the bonding layer comprises gold. In some embodiments, this layer is between about 250A and about 1 ~m thick. In other embodiments, this layer is at least about 250A thick. In other embodiments, this layer is about SOOA thick and, in still other embodiments, this layer is about 1 ~.m thick.
Light emitting elements such as light emitting diodes may be fabricated, according to some embodiments of the present invention, by depositing a first layer consisting essentially of nickel on a first face of a silicon carbide substrate that includes a diode region on a second face thereof. A second layer comprising silver and/or aluminum is deposited on the first layer opposite the first face. A
third layer comprising platinum is deposited on the second layer opposite the first layer.
A
fourth layer comprising gold is deposited on the third layer opposite the second layer.
The fourth layer is bonded to an external element such as a mounting assembly, submount and/or wire. Annealing is not performed during the deposition of the first layer, between the deposition of the first layer and the deposition of the second layer, between the deposition of the second layer and the deposition of the third layer, between the deposition of the third layer and the deposition of the fourth layer, or between the deposition of the fourth layer and the bonding of the fourth layer. In other embodiments, patterning also is not performed during the deposition of a first layer, between the deposition of a first layer and the deposition of a second layer, between the deposition of a second layer and the deposition of a third layer, between the deposition of a third layer and the deposition of a fourth layer, between the deposition of a fourth layer and the bonding the fourth~layer and during the bonding the fourth layer. In yet other embodiments, patterning may be performed in at least one of these operations. Moreover, in other embodiments, all of the above-described deposition steps are performed at room temperature. Accordingly, some embodiments of the present invention may provide ease of fabrication by eliminating some patterning steps and/or not using high temperature annealing during fabrication of the contact.
Brief Description of the Drawings Figures 1-3 are cross-sectional views of LEDs including reflective ohmic contacts according to some embodiments of the present invention.
Figure 4 is a flowchart of operations for fabricating LEDs and/or reflective ohmic contacts according to some embodiments of the present invention.
~ Detailed Description of Preferred Embodiments The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
Embodiments of the invention now will be described, generally with reference to gallium nitride-based light emitting diodes on silicon carbide-based substrates.
However, it will be understood by those having skill in the art that many embodiments of the invention may be employed with any combination of a silicon carbide substrate and/or layer and a light emitting element such as a light emitting diode or laser diode. Accordingly, combinations can include, for example, a silicon carbide diode on a silicon carbide substrate.
Figure 1 is a cross-sectional view of light emitting elements such as light emitting diodes and reflective ohmic contacts according to some embodiments of the present invention. As shown in Figure l, these light emitting diodes 100 include a silicon carbide substrate 110, such as an n-type silicon carbide substrate, having first and second opposing faces 110a and 110b and that is transparent to optical radiation in a predetermined wavelength range, i.e.~ that does not absorb or reflect all the optical radiation in the predetermined wavelength range. A diode region 130 is on the second face 110b and is configured to emit light in the predetermined wavelength range into the silicon carbide substrate 110 that is transparent to optical radiation in the predetermined wavelength range, upon application of voltage across the diode region, for example across ohmic contacts 120 and 150.
Still referring to Figure l, in these embodiments, the diode region 130 includes an n-type layer 132, an active region 134, and a p-type layer 136. Ohmic contacts 150 and 120 are made to the p-type layer 136 and to the n-type silicon carbide substrate 110, respectively, to provide an anode 160 and a cathode 140, respectively. In some embodiments, the diode region 130, including the n-type layer 132, the active region 134, and/or the p-type layer 136, comprise gallium nitride-based semiconductor layers, including alloys thereof such as indium gallium nitride and/or aluminum indium gallium nitride. It also will be understood that a buffer layer or layers, for example comprising aluminum gallium nitride, may be provided between the n-type gallium nitride layer 132 and the silicon carbide substrate 110, for example as described in U.S. Patents 5,393,993, 5,523,589, 6,177,688, and Application Serial No.
09/154,363 entitled hertical Geometry IhGaNLight Emitting Diode, the disclosures of which are hereby incorporated herein by reference in their entirety as if set forth fully herein.
The active region 134 may comprise a single layer of n-type, p-type or intrinsic gallium nitride-based materials, another homostructure, a single heterostructure, a double heterostructure and/or a quantum well structure, all of which are well known to those having skill in the art. Moreover, the active region 134 may comprise a light emitting layer bounded by one or more cladding layers. In some embodiments, the n-type gallium nitride layer 132 comprises silicon-doped gallium nitride, while the p-type gallium nitride layer 136 comprises magnesium-doped gallium nitride. In addition, the active region 134 may preferably include at least one indium gallium nitride quantum well.
For example, the light emitting elements such as diodes 100 may be gallium nitride based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina. For example, the present invention may be suitable for use with LEDs and/or lasers as described in United States Patent Nos. 6,201,262, 6,187,606, 6,120,600, 5,912,477, 5,739,554, 5,631,190, 5,604,135, 5,523,589, 5,416,342, 5,393,993, 5,338,944, 5,210,051, 5,027,168, 5,027,168, 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference as if set forth fully herein. Other suitable LEDs and/or lasers are described in United States Provisional Patent Application Serial No. 60,294,378, entitled Light Emitting Diode Str°uctu~e With Multi-Quantum Well and Supe~lattice St~~ucture, United States Provisional Patent Application Serial No. 60/294,445, entitled Multi-Quantum Light Emitting Diode Structure and United States Provisional Patent Application Serial No. 60,294;308, entitled Light Emitting Diode Structure With Supe~lattice Structure, each filed May 30, 2001, United States Patent Application Serial No. 10/140,796, entitled Group 111 Nitride Based Light Emitting Diode Stf~uctures With A Quantum Well And Superlattice, Gt~oup III
Nitride Based Quantum Well Structures And Group 111 Nitride Based Superlattice Structures, filed May 7, 2002, as well as United States Provisional Patent Application Serial No.
10/057,82, entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor filed July 23, 2001 and United States Patent Application Serial No. 10/057,82, filed January 25, 2002 entitled Light Emitting Diodes Including Substt-ate Modifications For~ Light Extraction And Manufacturing Methods Therefor. the disclosures of which are incorporated herein as if set forth fully. Furthermore, phosphor coated LEDs, such as those described in United States Provisional Application Serial No. 60/411,980, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods Therefor, filed September 19, 2002, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in embodiments of the present invention.
The LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate. In such embodiments, the substrate may be patterned so as to enhance light output of the devices as is described, for example, in United States Provisional Patent Application Ser. No. 60/307,235 filed July 23, 2001 entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor or as described in United States Patent Application Serial No. 10/057,821, filed January 25, 2002, entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor, the disclosures of which are incorporated herein by reference as if set forth fully herein.
In some embodiments, the ohmic contact 150 for the p-type gallium nitride layer 136 comprises platinum, nickel and/or titanium/gold. In other embodiments, a reflective ohmic contact comprising, for example, aluminum and/or silver, may be used. Other suitable materials that form ohmic contacts to p-type gallium nitride may be used for ohmic contact 150. Examples of ohmic contacts to n-type gallium nitride and p-type gallium nitride are shown, for example, in U.S. Patent 5,767,581, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
Still referring to Figure l, in some embodiments, the substrate 110 comprises a silicon carbide substrate that is transparent to optical radiation in the predetermined wavelength range. These substrates may be semi-insulating (high resistivity) so that contacts according to embodiments of the invention may be used as a reflector.
One technique for fabricating a silicon carbide substrate that is transparent to optical radiation in a predetermined wavelength range is described in U.S. Patent 5,718,760, which is assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein in its entirety as if set forth fully herein.
Silicon carbide substrate 110 may comprise the 2H, 4H, 6H, 8H, 15R and/or 3C polytypes. The 6H
andlor 4H polytype may be preferred for optoelectronic applications. In other embodiments, the silicon carbide substrate 110 is a compensated, colorless silicon carbide substrate, as described in the above-cited U.S. Patent 5,718,760.
Gallium nitride-based epitaxial layers may be formed on the substrate, for example, as described in U.S. Patent 6,177,688, which then can be processed to produce structures such as are shown in Figure 1.
Continuing with the description of Figure l, according to embodiments of the present invention, reflective ohmic contacts 120 for silicon carbide, such as the first face 110a of the n-type silicon carbide substrate 110, are provided. As shown in Figure l, these ohmic contacts may include a layer 122 consisting essentially of nickel, also referred to as a first layer, on the silicon carbide, such as on the first face 110a of the n-type silicon carbide substrate 110. As used herein, a layer consisting essentially of nickel contains substantially only elemental nickel, and does not contain substantial amounts of nickel alloys, nickel oxides and/or other nickel compounds, but may contain insubstantial amounts of impurities ordinarily associated with nickel, including insubstantial amounts of the above-described alloys or compounds and may also contain insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the elemental nickel as an ohmic contact to the silicon carbide that also allow transmission therethrough of optical radiation that emerges from the silicon carbide. In some embodiments, these insubstantial amounts axe less than about 0.01%. In other embodiments, they are less than about 1 %.
In some embodiments, the layer consisting essentially of nickel 122 is sufficiently thick to provide an ohmic contact to the silicon carbide substrate 110, but is sufficiently thin to allow transmission therethrough of at least some optical radiation that emerges from the first face 110a of the silicon carbide substrate 110. In other embodiments, the layer consisting essentially of nickel 122 is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the silicon carbide substrate first face 110a. In some embodiments, substantially all optical radiation is more than about 50% of the optical radiation. In other embodiments, substantially all optical radiation is more than about 90% of the optical radiation. In some embodiments, the layer 122 consisting essentially of nickel is between about 15A and about 100A thick. In other embodiments, the layer 122 consisting essentially of nickel is between about 15A and about 25A thick. In still other embodiments, the layer 122 is about 25A thick and, in still other embodiments, this layer is about 15~ thick.
The reflective ohmic contact 120 also includes a conductive reflector layer 124, also referred to as a second layer, on the layer 122 consisting essentially of nickel, opposite the silicon carbide substrate 110. In some embodiments, the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer 122 consisting essentially of nickel. In some embodiments, substantially all optical radiation is more than about 50% of the optical radiation. In other embodiments, substantially all optical radiation is more than about 90%
of the optical radiation. In some embodiments, the reflector layer 124 comprises silver and/or aluminum. In other embodiments, the reflector layer 124 is at least about 700th thick. In still other embodiments, the reflector layer 124 is between about 700A
and about 2~m thick. In yet other embodiments, the reflector layer 124 is about 1000A thick.
As also shown in Figure l, the reflective ohmic contact 120 also includes a conductive barrier layer 126, also referred to as a third layer, on the reflector layer 124 opposite the layer 122 consisting essentially of nickel. In some embodiments, the barrier layer is sufficiently thick to reduce or prevent migration of impurities from outside the barrier layer 126 into the reflector layer 124 and/or the ohmic layer 122 consisting essentially of nickel. In some embodiments, the barrier layer comprises platinum. In some embodiments of the invention, the barrier layer is at least about 250A thick. In other embodiments, the barrier layer is between about 250A and about 1 ~,m thick. In some embodiments of the invention, for example when the reflective ohmic contact 120 is attached to a submount 210 as shown in Figure 1, the barrier layer is about SOOA thick. In still other embodiments of the invention, for example when the reflective ohmic contact 120 is wire bonded as shown in Figures 2 and 3, the barrier layer 126 is about 1000th thick.
Finally, still referring to Figure 1, reflective ohmic contacts according to embodiments of the invention include a conductive bonding layer 128, also referred to as a fourth layer, on the barrier layer 126 opposite the reflector layer 124.
In some embodiments, the bonding layer 128 comprises gold. In some embodiments, the bonding layer 128 is at least about 250A thick. In other embodiments, the bonding layer 128 is between about 250th and about 1 ~.m thick. In some embodiments of the present invention, for example when the reflective ohmic contact 120 is attached to a submount 210 as shown in Figure 1, the bonding layer 128 is about SOON thick.
In still other embodiments, for example when the reflective ohmic contact 120 is wire bonded, as shown in Figures 2 and 3, the bonding layer is about 1 ~m thick.
The bonding layer 128 may be bonded to a mounting support or submount 210, such as a heat sink. Silver epoxy may be used for bonding. When bonding the bonding layer 128 to a mounting support 210, relatively thin barrier layers 126 and bonding layer 128 may be used in some embodiments, as was described above. For example, a barrier layer 126 that is about 500 thick and a bonding layer 128 that is about 500 thick may be used. As also shown in Figure 1, a wire 164 or other electrical connection may be provided between the cathode 160 and the ohmic contact 150 via a bonding region 162. LEDs 100 according to some embodiments of the invention may be packaged in conventional dome structures 180 that include an optical element such as a lens 182 for light emission. The entire dome structure 180 also may function as an optical element. The dome structure 180 may comprise plastic, glass and/or other materials, and also may include silicon gel, phosphor and/or other materials therein. Other LED structures that may be used with reflective ohmic contacts according to some embodiments of the present invention are described in the above-incorporated Application Serial No. 10/057,821.
Instead of discouraging or inhibiting light from entering the substrate, as may be done conventionally, some embodiments of the present invention can encourage light generated in the diode region 130 to enter the substrate 110, where it can be most efficiently extracted. Accordingly, some embodiments of the present invention may be particularly suited for use in a so-called "flip-chip" or "upside-down"
packaging configuration as will now be described in connection with Figures 2 and 3.
Embodiments of the invention also may be used with conventional "right-side-up" or "non-flip-chip" packaging, as was described in connection with Figure 1.
Referring now to Figure 2, LEDs 200 including reflective ohmic contacts 120, according to some embodiments of the present invention, include a substrate 110' and a diode region 130. As shown in Figure 2, these LEDs 200 are provided in flip-chip configuration, wherein the substrate 110' is up (remote from the submount 210) and the diode region 130 is down (adjacent the submount 210). As also shown in Figure 2, in some embodiments of the present invention, .the substrate 110' may be configured such that the first face 110a' has a smaller surface axea than the second face 110b'. However, in other embodiments, the surface areas may be identical or the second face 110b' may have smaller surface area than the first face 110a'. A
wire 220 is bonded to the bonding layer 128 using conventional techniques. For wire bonding, thicker barrier layers 126 and/or bonding layers 128 may be used in some embodiments, as was described above. For example, the barrier layer 126 may be about 1 OOOt~ thick and the bonding layer 128 may be about 1 ~,m thick. As also shown in Figure 2, in some embodiments of the present invention, the layer 122 consisting essentially of nickel and/or the reflective ohmic contact 120 can cover the entire first face 110a' of the substrate 110'. Additional description of LEDs that have substrates with different area first and second faces may be found in the above-incorporated Application Serial No. 10/057,821.
Figure 3 is a cross-sectional view of other LEDs, including reflective ohmic contacts 120 according to some embodiments of the invention. As shown in Figure 3, these LEDs 300 include a silicon carbide substrate, such as an n-SiC substrate 110"
including at least one sidewall having an oblique portion 110c adjacent the first face 110a". The oblique portion 110c forms a non-orthogonal angle, for example an obtuse angle such as an angle of 120°, with the first face 110a". In some embodiments, as shown in Figure 3, the oblique portion 110c may extend from the first face 110a" all the way to the second face 110b". Embodiments of silicon carbide substrates having oblique portions 110c adjacent a first face 110a"
are further described in Provisional Application Serial No. 60/411,980, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalk, and Fabrication Methods Theref~r, filed September 19, 2002.
Figure 4 is a flowchart illustrating methods of fabricating reflective ohmic contacts for silicon carbide, including for silicon carbide-based optoelectronic devices such as LEDs, according to some embodiments of the present invention. As shown in Figure 4, at Block 410, a first layer consisting essentially of nickel, such as the layer 122 of Figures 1-3, is deposited, for example on a first face of a silicon carbide substrate, such as the substrate 110,110' or 110" of Figures 1-3, respectively, that includes a diode region 130 on a second face thereof. As was already described, many techniques can be used to fabricate the substrate and the diode region.
Referring to now Block 420, a second layer comprising silver and/or aluminum, such as the reflector layer 124 of Figures 1-3, is deposited on the first layer opposite the first face. Referring to Block 430, a third layer comprising platinum, such as the barrier layer 126 of Figures 1-3, is deposited on the second layer opposite m the first layer. At Block 440, a fourth layer comprising gold, such as the bonding layer 128 of Figures 1-3, is deposited on the fourth layer opposite the second layer.
Finally, referring to Block 450, the fourth layer is bonded to an external element, such as a submount 210 of Figure 1 or a wire 220 of Figures 2 and 3. All of the above-described depositing steps 410-440 may be performed using electron-beam deposition, thermal evaporation, sputter deposition and/or other conventional deposition techniques.
As shown in Figure 4, according to some embodiments of the present invention, an anneal is not performed during Block 410, between Blocks 410 and 420, between Blocks 420 and 430, between Blocks 430 and 440, between Blocks 440 and 450 or during Block 450. Thus, in some embodiments of the present invention, reflective ohmic contacts are formed in an as-deposited condition without an anneal.
An anneal may create undesirable oxides of the first layer consisting essentially of nickel and/or compromise the reflectivity of the reflector.
Moreover, as was shown in Figures 1-3, according to other embodiments of the present invention, the reflective ohmic contact 120 covers the entire first face 110a,110a', 110a" of the silicon carbide substrate 110,110',110". Stated differently, patterning is not performed during Block 410, between Blocks 410 and 420, between Blocks 420 and 430, between Blocks 430 and 440, or between Blocks 440 and 450 of Figure 4. In other embodiments, patterning may be performed during or between at least one of these blocks.
Finally, according to other embodiments of the invention, as shown in Figure 4, the depositing of Blocks 410-440 may be performed using conventional electron-beam deposition, thermal evaporation, sputter deposition and/or other conventional deposition techniques, at room temperature. High temperature anneals need not be used.
Accordingly, reflective ohmic contacts to n-type silicon carbide and, in some embodiments, heavily doped n+ silicon carbide, have been described. These contacts may provide low electrical and optical loss at the reflective contact-silicon carbide interface. In some embodiments of the present invention, these contacts comprise respective layers of Ni/Ag/Pt/Au, with respective thicknesses of 25A/1000A/SOOAl500A. The layer 122 consisting essentially of nickel can be almost totally transparent to the incident light, because it is so thin. It has been found, according to some embodiments of the present invention, that other metals, such as titanium or chromium may be much more optically absorbing than nickel or platinum, even in layers as thin as 25th. Moreover, it has been found that nickel can be superior to platinum as an ohmic metal. See, for example, U.S. Patent Application Serial No.
101603,331, filed October 31, 2001, entitled Low Temperature Formation of Backside Ohmic Contacts for hertical Device to Slater et al., the disclosure of which is hereby incorporated by reference herein in its entirety as if set forth fully herein.
Accordingly, embodiments of the present invention provide an ohmic layer 122 consisting essentially of nickel.
Second embodiments of the invention also use a reflector layer 124 comprising silver. Silver can be an excellent reflector. Moreover, the barrier layer 126 and bonding layer 128 are chemically stable layers that can protect the nickel and the silver mirror from chemical attack and/or oxidation. The resulting reflective ohmic contacts 120 according to embodiments of the present invention can have low optical absorption and low electrical loss.
Conventional silicon carbide contacts of annealed or sintered nickel that include substantial amounts of nickel oxides, or of as-deposited ohmics such as Ti/Pt/Au, may be electrically and/or optically lossy. Since these traditional contacts may be lossy, the amount of coverage on the silicon carbide substrate surface may be limited conventionally, to avoid absorption and attenuation of the incident and reflected light. More specifically, in a light emitting diode, a conventional contact to the n-type silicon carbide substrate may be a grid that may cover only about 20% of the silicon carbide substrate surface. This grid may be formed using a photolithography process step, whereby the ohmic metal can be patterned as a grid by selectively depositing or adding the metal to the silicon carbide surface, or by selectively etching or subtracting deposited metal from the silicon carbide surface.
The conventional grid contact allows the silver epoxy used for the die attach to act as a reflector on the silicon caxbide between the grid lines of the ohmic metal.
In sharp contrast, reflective ohmic contacts according to some embodiments of the present invention can provide greater contact area and in some embodiments, can cover the entire substrate face, which can improve the electrical resistance of the metal-silicon carbide interface, while providing the reflective nature of silver epoxy.
The larger contact area can also reduce the need for lower specific contact resistance between the silicon carbide and the ohmic metal. Moreover, the ability to place the metal fully over the silicon carbide surface, according to some embodiments of the present invention, without the need to provide photolithography, can provide a reduction in labor, handling and potential wafer breakage, cycle time, outgoing inspection activity and/or cost, as compared to a conventional grid contact approach that is used to fabricate silicon carbide-based LED wafers and chips.
It also will be understood that the thickness of the barrier and bonding layers may be varied, depending upon the external element that is bonded to the bonding layer. For example, in embodiments of the present invention that are shown in Figures 2 and 3, the bond pad is also the ohmic contact to the silicon carbide substrate. These embodiments of the present invention may employ a barrier layer 126 comprising platinum having a thickness of about 1000., and a bonding layer comprising gold having a thickness of about 1 Vim. A low loss reflective substrate contact-bond pad combination thereby may be formed.
In the drawings and specification, there have been disclosed embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF
FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING
THE SAME
Field of the Invention This invention relates to silicon carbide-based microelectronic devices and fabrication methods therefor, and more particularly to silicon carbide-based light emitting devices such as Light Emitting Diodes (LEDs) and laser diodes and fabrication methods therefor.
Background of the Invention Light emitting diodes are widely used in consumer and commercial applications. As is well known to those having skill in the art, a light emitting diode generally includes a diode region on a microelectronic substrate. The microelectronic substrate may comprise, for example, silicon, gallium arsenide, gallium phosphide, alloys thereof, silicon carbide and/or sapphire. Continued developments in LEDs have resulted in highly efficient and mechanically robust light sources that can cover the visible spectrum and beyond. These attributes, coupled with the potentially long service life of solid state devices, may enable a variety of new display applications, and may place LEDs in a position to compete with the well entrenched incandescent and fluorescent lamps.
In fabricating light emitting devices, such as LEDs andlor laser diodes, using silicon carbide, it may be desirable to provide a reflective ohmic contact to the silicon carbide, and more specifically to n-type silicon carbide. These reflective ohmic contacts should be simple to fabricate using conventional microelectronic fabrication techniques, and should provide low ohmic losses and/or high reflectivity.
These contacts also should be amenable to wire bonding and/or submount bonding thereto.
Summary of the Invention Reflective ohmic contacts for silicon carbide and, in some embodiments, for n-type silicon carbide, according to some embodiments of the present invention, include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. It will be understood that, as used herein, the layer consisting essentially of nickel contains substantially only elemental nickel, and does not contain substantial amounts of nickel alloys, nickel oxides and/or other nickel compounds, but may contain insubstantial amounts of impurities ordinarily associated with nickel, including insubstantial amounts of the above-described alloys or compounds and may also contain insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the elemental nickel as an ohmic contact to the silicon carbide that also allow transmission therethrough of optical radiation that emerges from the silicon carbide. Reflective ohmic contacts according to embodiments of the present invention also include a reflector layer on the layer consisting essentially of nickel, opposite the silicon carbide, a barrier layer on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer on the barrier layer opposite the reflector layer. It has been found, according to some embodiments of the present invention, that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.
In other embodiments of the present invention, the layer consisting essentially of nickel is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the silicon carbide. In yet other embodiments, the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer consisting essentially of nickel. Moreover, in other embodiments of the present invention, the silicon carbide includes a surface and a layer consisting essentially of nickel covers the surface. By covering the surface, adhesion of the nickel to the silicon carbide may be enhanced, and reflectivity of substantially all of the optical radiation that emerges from the silicon carbide may be provided. In still other embodiments, the layer consisting essentially of nickel covers only a portion of the surface and/or may be patterned, for example to form a grid.
Other embodiments of the present invention provide the reflective ohmic contact on the first face of a silicon carbide substrate and a light emitting region on a second face of the silicon carbide substrate, to provide a light emitting element such as an LED or a laser. Moreover, in other embodiments, a mounting assembly is provided on the bonding layer opposite the barrier layer. In yet other embodiments, a wire bond is provided to the bonding layer. Other external elements also may be bonded to the bonding layer.
In some embodiments of the present invention, the layer consisting essentially of nickel is a layer consisting of unannealed nickel. Moreover, in some embodiments, the layer consisting essentially of nickel is between about 1 SA and about l OOA thick.
In other embodiments, the layer consisting essentially of nickel is between about 151 and about 25A thick. In still other embodiments, the layer consisting essentially of nickel is about 15~ thick and, in yet other embodiments, the layer consisting essentially of nickel is about 25th thick.
In some embodiments of the invention, the reflector layer comprises silver and/or aluminum. In some embodiments of the present invention, this layer is between about 7001 and about 2~m thick. In other embodiments, this layer is at least about 700A thick. In still other embodiments, this layer is about 1000A thick.
In some embodiments of the present invention, the barrier layer comprises platinum. In some embodiments, this layer is between about 2501 and about 1 ~,m thick. In other embodiments, this layer is at least about 250A thick. In other embodiments, this layer is about SOOA thick and, in still other embodiments, this layer is about 1000 thick.
In some embodiments of the invention, the bonding layer comprises gold. In some embodiments, this layer is between about 250A and about 1 ~m thick. In other embodiments, this layer is at least about 250A thick. In other embodiments, this layer is about SOOA thick and, in still other embodiments, this layer is about 1 ~.m thick.
Light emitting elements such as light emitting diodes may be fabricated, according to some embodiments of the present invention, by depositing a first layer consisting essentially of nickel on a first face of a silicon carbide substrate that includes a diode region on a second face thereof. A second layer comprising silver and/or aluminum is deposited on the first layer opposite the first face. A
third layer comprising platinum is deposited on the second layer opposite the first layer.
A
fourth layer comprising gold is deposited on the third layer opposite the second layer.
The fourth layer is bonded to an external element such as a mounting assembly, submount and/or wire. Annealing is not performed during the deposition of the first layer, between the deposition of the first layer and the deposition of the second layer, between the deposition of the second layer and the deposition of the third layer, between the deposition of the third layer and the deposition of the fourth layer, or between the deposition of the fourth layer and the bonding of the fourth layer. In other embodiments, patterning also is not performed during the deposition of a first layer, between the deposition of a first layer and the deposition of a second layer, between the deposition of a second layer and the deposition of a third layer, between the deposition of a third layer and the deposition of a fourth layer, between the deposition of a fourth layer and the bonding the fourth~layer and during the bonding the fourth layer. In yet other embodiments, patterning may be performed in at least one of these operations. Moreover, in other embodiments, all of the above-described deposition steps are performed at room temperature. Accordingly, some embodiments of the present invention may provide ease of fabrication by eliminating some patterning steps and/or not using high temperature annealing during fabrication of the contact.
Brief Description of the Drawings Figures 1-3 are cross-sectional views of LEDs including reflective ohmic contacts according to some embodiments of the present invention.
Figure 4 is a flowchart of operations for fabricating LEDs and/or reflective ohmic contacts according to some embodiments of the present invention.
~ Detailed Description of Preferred Embodiments The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
Embodiments of the invention now will be described, generally with reference to gallium nitride-based light emitting diodes on silicon carbide-based substrates.
However, it will be understood by those having skill in the art that many embodiments of the invention may be employed with any combination of a silicon carbide substrate and/or layer and a light emitting element such as a light emitting diode or laser diode. Accordingly, combinations can include, for example, a silicon carbide diode on a silicon carbide substrate.
Figure 1 is a cross-sectional view of light emitting elements such as light emitting diodes and reflective ohmic contacts according to some embodiments of the present invention. As shown in Figure l, these light emitting diodes 100 include a silicon carbide substrate 110, such as an n-type silicon carbide substrate, having first and second opposing faces 110a and 110b and that is transparent to optical radiation in a predetermined wavelength range, i.e.~ that does not absorb or reflect all the optical radiation in the predetermined wavelength range. A diode region 130 is on the second face 110b and is configured to emit light in the predetermined wavelength range into the silicon carbide substrate 110 that is transparent to optical radiation in the predetermined wavelength range, upon application of voltage across the diode region, for example across ohmic contacts 120 and 150.
Still referring to Figure l, in these embodiments, the diode region 130 includes an n-type layer 132, an active region 134, and a p-type layer 136. Ohmic contacts 150 and 120 are made to the p-type layer 136 and to the n-type silicon carbide substrate 110, respectively, to provide an anode 160 and a cathode 140, respectively. In some embodiments, the diode region 130, including the n-type layer 132, the active region 134, and/or the p-type layer 136, comprise gallium nitride-based semiconductor layers, including alloys thereof such as indium gallium nitride and/or aluminum indium gallium nitride. It also will be understood that a buffer layer or layers, for example comprising aluminum gallium nitride, may be provided between the n-type gallium nitride layer 132 and the silicon carbide substrate 110, for example as described in U.S. Patents 5,393,993, 5,523,589, 6,177,688, and Application Serial No.
09/154,363 entitled hertical Geometry IhGaNLight Emitting Diode, the disclosures of which are hereby incorporated herein by reference in their entirety as if set forth fully herein.
The active region 134 may comprise a single layer of n-type, p-type or intrinsic gallium nitride-based materials, another homostructure, a single heterostructure, a double heterostructure and/or a quantum well structure, all of which are well known to those having skill in the art. Moreover, the active region 134 may comprise a light emitting layer bounded by one or more cladding layers. In some embodiments, the n-type gallium nitride layer 132 comprises silicon-doped gallium nitride, while the p-type gallium nitride layer 136 comprises magnesium-doped gallium nitride. In addition, the active region 134 may preferably include at least one indium gallium nitride quantum well.
For example, the light emitting elements such as diodes 100 may be gallium nitride based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina. For example, the present invention may be suitable for use with LEDs and/or lasers as described in United States Patent Nos. 6,201,262, 6,187,606, 6,120,600, 5,912,477, 5,739,554, 5,631,190, 5,604,135, 5,523,589, 5,416,342, 5,393,993, 5,338,944, 5,210,051, 5,027,168, 5,027,168, 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference as if set forth fully herein. Other suitable LEDs and/or lasers are described in United States Provisional Patent Application Serial No. 60,294,378, entitled Light Emitting Diode Str°uctu~e With Multi-Quantum Well and Supe~lattice St~~ucture, United States Provisional Patent Application Serial No. 60/294,445, entitled Multi-Quantum Light Emitting Diode Structure and United States Provisional Patent Application Serial No. 60,294;308, entitled Light Emitting Diode Structure With Supe~lattice Structure, each filed May 30, 2001, United States Patent Application Serial No. 10/140,796, entitled Group 111 Nitride Based Light Emitting Diode Stf~uctures With A Quantum Well And Superlattice, Gt~oup III
Nitride Based Quantum Well Structures And Group 111 Nitride Based Superlattice Structures, filed May 7, 2002, as well as United States Provisional Patent Application Serial No.
10/057,82, entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor filed July 23, 2001 and United States Patent Application Serial No. 10/057,82, filed January 25, 2002 entitled Light Emitting Diodes Including Substt-ate Modifications For~ Light Extraction And Manufacturing Methods Therefor. the disclosures of which are incorporated herein as if set forth fully. Furthermore, phosphor coated LEDs, such as those described in United States Provisional Application Serial No. 60/411,980, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods Therefor, filed September 19, 2002, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in embodiments of the present invention.
The LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate. In such embodiments, the substrate may be patterned so as to enhance light output of the devices as is described, for example, in United States Provisional Patent Application Ser. No. 60/307,235 filed July 23, 2001 entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor or as described in United States Patent Application Serial No. 10/057,821, filed January 25, 2002, entitled Light Emitting Diodes Including Substrate Modifications For Light Extraction And Manufacturing Methods Therefor, the disclosures of which are incorporated herein by reference as if set forth fully herein.
In some embodiments, the ohmic contact 150 for the p-type gallium nitride layer 136 comprises platinum, nickel and/or titanium/gold. In other embodiments, a reflective ohmic contact comprising, for example, aluminum and/or silver, may be used. Other suitable materials that form ohmic contacts to p-type gallium nitride may be used for ohmic contact 150. Examples of ohmic contacts to n-type gallium nitride and p-type gallium nitride are shown, for example, in U.S. Patent 5,767,581, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
Still referring to Figure l, in some embodiments, the substrate 110 comprises a silicon carbide substrate that is transparent to optical radiation in the predetermined wavelength range. These substrates may be semi-insulating (high resistivity) so that contacts according to embodiments of the invention may be used as a reflector.
One technique for fabricating a silicon carbide substrate that is transparent to optical radiation in a predetermined wavelength range is described in U.S. Patent 5,718,760, which is assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein in its entirety as if set forth fully herein.
Silicon carbide substrate 110 may comprise the 2H, 4H, 6H, 8H, 15R and/or 3C polytypes. The 6H
andlor 4H polytype may be preferred for optoelectronic applications. In other embodiments, the silicon carbide substrate 110 is a compensated, colorless silicon carbide substrate, as described in the above-cited U.S. Patent 5,718,760.
Gallium nitride-based epitaxial layers may be formed on the substrate, for example, as described in U.S. Patent 6,177,688, which then can be processed to produce structures such as are shown in Figure 1.
Continuing with the description of Figure l, according to embodiments of the present invention, reflective ohmic contacts 120 for silicon carbide, such as the first face 110a of the n-type silicon carbide substrate 110, are provided. As shown in Figure l, these ohmic contacts may include a layer 122 consisting essentially of nickel, also referred to as a first layer, on the silicon carbide, such as on the first face 110a of the n-type silicon carbide substrate 110. As used herein, a layer consisting essentially of nickel contains substantially only elemental nickel, and does not contain substantial amounts of nickel alloys, nickel oxides and/or other nickel compounds, but may contain insubstantial amounts of impurities ordinarily associated with nickel, including insubstantial amounts of the above-described alloys or compounds and may also contain insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the elemental nickel as an ohmic contact to the silicon carbide that also allow transmission therethrough of optical radiation that emerges from the silicon carbide. In some embodiments, these insubstantial amounts axe less than about 0.01%. In other embodiments, they are less than about 1 %.
In some embodiments, the layer consisting essentially of nickel 122 is sufficiently thick to provide an ohmic contact to the silicon carbide substrate 110, but is sufficiently thin to allow transmission therethrough of at least some optical radiation that emerges from the first face 110a of the silicon carbide substrate 110. In other embodiments, the layer consisting essentially of nickel 122 is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the silicon carbide substrate first face 110a. In some embodiments, substantially all optical radiation is more than about 50% of the optical radiation. In other embodiments, substantially all optical radiation is more than about 90% of the optical radiation. In some embodiments, the layer 122 consisting essentially of nickel is between about 15A and about 100A thick. In other embodiments, the layer 122 consisting essentially of nickel is between about 15A and about 25A thick. In still other embodiments, the layer 122 is about 25A thick and, in still other embodiments, this layer is about 15~ thick.
The reflective ohmic contact 120 also includes a conductive reflector layer 124, also referred to as a second layer, on the layer 122 consisting essentially of nickel, opposite the silicon carbide substrate 110. In some embodiments, the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer 122 consisting essentially of nickel. In some embodiments, substantially all optical radiation is more than about 50% of the optical radiation. In other embodiments, substantially all optical radiation is more than about 90%
of the optical radiation. In some embodiments, the reflector layer 124 comprises silver and/or aluminum. In other embodiments, the reflector layer 124 is at least about 700th thick. In still other embodiments, the reflector layer 124 is between about 700A
and about 2~m thick. In yet other embodiments, the reflector layer 124 is about 1000A thick.
As also shown in Figure l, the reflective ohmic contact 120 also includes a conductive barrier layer 126, also referred to as a third layer, on the reflector layer 124 opposite the layer 122 consisting essentially of nickel. In some embodiments, the barrier layer is sufficiently thick to reduce or prevent migration of impurities from outside the barrier layer 126 into the reflector layer 124 and/or the ohmic layer 122 consisting essentially of nickel. In some embodiments, the barrier layer comprises platinum. In some embodiments of the invention, the barrier layer is at least about 250A thick. In other embodiments, the barrier layer is between about 250A and about 1 ~,m thick. In some embodiments of the invention, for example when the reflective ohmic contact 120 is attached to a submount 210 as shown in Figure 1, the barrier layer is about SOOA thick. In still other embodiments of the invention, for example when the reflective ohmic contact 120 is wire bonded as shown in Figures 2 and 3, the barrier layer 126 is about 1000th thick.
Finally, still referring to Figure 1, reflective ohmic contacts according to embodiments of the invention include a conductive bonding layer 128, also referred to as a fourth layer, on the barrier layer 126 opposite the reflector layer 124.
In some embodiments, the bonding layer 128 comprises gold. In some embodiments, the bonding layer 128 is at least about 250A thick. In other embodiments, the bonding layer 128 is between about 250th and about 1 ~.m thick. In some embodiments of the present invention, for example when the reflective ohmic contact 120 is attached to a submount 210 as shown in Figure 1, the bonding layer 128 is about SOON thick.
In still other embodiments, for example when the reflective ohmic contact 120 is wire bonded, as shown in Figures 2 and 3, the bonding layer is about 1 ~m thick.
The bonding layer 128 may be bonded to a mounting support or submount 210, such as a heat sink. Silver epoxy may be used for bonding. When bonding the bonding layer 128 to a mounting support 210, relatively thin barrier layers 126 and bonding layer 128 may be used in some embodiments, as was described above. For example, a barrier layer 126 that is about 500 thick and a bonding layer 128 that is about 500 thick may be used. As also shown in Figure 1, a wire 164 or other electrical connection may be provided between the cathode 160 and the ohmic contact 150 via a bonding region 162. LEDs 100 according to some embodiments of the invention may be packaged in conventional dome structures 180 that include an optical element such as a lens 182 for light emission. The entire dome structure 180 also may function as an optical element. The dome structure 180 may comprise plastic, glass and/or other materials, and also may include silicon gel, phosphor and/or other materials therein. Other LED structures that may be used with reflective ohmic contacts according to some embodiments of the present invention are described in the above-incorporated Application Serial No. 10/057,821.
Instead of discouraging or inhibiting light from entering the substrate, as may be done conventionally, some embodiments of the present invention can encourage light generated in the diode region 130 to enter the substrate 110, where it can be most efficiently extracted. Accordingly, some embodiments of the present invention may be particularly suited for use in a so-called "flip-chip" or "upside-down"
packaging configuration as will now be described in connection with Figures 2 and 3.
Embodiments of the invention also may be used with conventional "right-side-up" or "non-flip-chip" packaging, as was described in connection with Figure 1.
Referring now to Figure 2, LEDs 200 including reflective ohmic contacts 120, according to some embodiments of the present invention, include a substrate 110' and a diode region 130. As shown in Figure 2, these LEDs 200 are provided in flip-chip configuration, wherein the substrate 110' is up (remote from the submount 210) and the diode region 130 is down (adjacent the submount 210). As also shown in Figure 2, in some embodiments of the present invention, .the substrate 110' may be configured such that the first face 110a' has a smaller surface axea than the second face 110b'. However, in other embodiments, the surface areas may be identical or the second face 110b' may have smaller surface area than the first face 110a'. A
wire 220 is bonded to the bonding layer 128 using conventional techniques. For wire bonding, thicker barrier layers 126 and/or bonding layers 128 may be used in some embodiments, as was described above. For example, the barrier layer 126 may be about 1 OOOt~ thick and the bonding layer 128 may be about 1 ~,m thick. As also shown in Figure 2, in some embodiments of the present invention, the layer 122 consisting essentially of nickel and/or the reflective ohmic contact 120 can cover the entire first face 110a' of the substrate 110'. Additional description of LEDs that have substrates with different area first and second faces may be found in the above-incorporated Application Serial No. 10/057,821.
Figure 3 is a cross-sectional view of other LEDs, including reflective ohmic contacts 120 according to some embodiments of the invention. As shown in Figure 3, these LEDs 300 include a silicon carbide substrate, such as an n-SiC substrate 110"
including at least one sidewall having an oblique portion 110c adjacent the first face 110a". The oblique portion 110c forms a non-orthogonal angle, for example an obtuse angle such as an angle of 120°, with the first face 110a". In some embodiments, as shown in Figure 3, the oblique portion 110c may extend from the first face 110a" all the way to the second face 110b". Embodiments of silicon carbide substrates having oblique portions 110c adjacent a first face 110a"
are further described in Provisional Application Serial No. 60/411,980, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalk, and Fabrication Methods Theref~r, filed September 19, 2002.
Figure 4 is a flowchart illustrating methods of fabricating reflective ohmic contacts for silicon carbide, including for silicon carbide-based optoelectronic devices such as LEDs, according to some embodiments of the present invention. As shown in Figure 4, at Block 410, a first layer consisting essentially of nickel, such as the layer 122 of Figures 1-3, is deposited, for example on a first face of a silicon carbide substrate, such as the substrate 110,110' or 110" of Figures 1-3, respectively, that includes a diode region 130 on a second face thereof. As was already described, many techniques can be used to fabricate the substrate and the diode region.
Referring to now Block 420, a second layer comprising silver and/or aluminum, such as the reflector layer 124 of Figures 1-3, is deposited on the first layer opposite the first face. Referring to Block 430, a third layer comprising platinum, such as the barrier layer 126 of Figures 1-3, is deposited on the second layer opposite m the first layer. At Block 440, a fourth layer comprising gold, such as the bonding layer 128 of Figures 1-3, is deposited on the fourth layer opposite the second layer.
Finally, referring to Block 450, the fourth layer is bonded to an external element, such as a submount 210 of Figure 1 or a wire 220 of Figures 2 and 3. All of the above-described depositing steps 410-440 may be performed using electron-beam deposition, thermal evaporation, sputter deposition and/or other conventional deposition techniques.
As shown in Figure 4, according to some embodiments of the present invention, an anneal is not performed during Block 410, between Blocks 410 and 420, between Blocks 420 and 430, between Blocks 430 and 440, between Blocks 440 and 450 or during Block 450. Thus, in some embodiments of the present invention, reflective ohmic contacts are formed in an as-deposited condition without an anneal.
An anneal may create undesirable oxides of the first layer consisting essentially of nickel and/or compromise the reflectivity of the reflector.
Moreover, as was shown in Figures 1-3, according to other embodiments of the present invention, the reflective ohmic contact 120 covers the entire first face 110a,110a', 110a" of the silicon carbide substrate 110,110',110". Stated differently, patterning is not performed during Block 410, between Blocks 410 and 420, between Blocks 420 and 430, between Blocks 430 and 440, or between Blocks 440 and 450 of Figure 4. In other embodiments, patterning may be performed during or between at least one of these blocks.
Finally, according to other embodiments of the invention, as shown in Figure 4, the depositing of Blocks 410-440 may be performed using conventional electron-beam deposition, thermal evaporation, sputter deposition and/or other conventional deposition techniques, at room temperature. High temperature anneals need not be used.
Accordingly, reflective ohmic contacts to n-type silicon carbide and, in some embodiments, heavily doped n+ silicon carbide, have been described. These contacts may provide low electrical and optical loss at the reflective contact-silicon carbide interface. In some embodiments of the present invention, these contacts comprise respective layers of Ni/Ag/Pt/Au, with respective thicknesses of 25A/1000A/SOOAl500A. The layer 122 consisting essentially of nickel can be almost totally transparent to the incident light, because it is so thin. It has been found, according to some embodiments of the present invention, that other metals, such as titanium or chromium may be much more optically absorbing than nickel or platinum, even in layers as thin as 25th. Moreover, it has been found that nickel can be superior to platinum as an ohmic metal. See, for example, U.S. Patent Application Serial No.
101603,331, filed October 31, 2001, entitled Low Temperature Formation of Backside Ohmic Contacts for hertical Device to Slater et al., the disclosure of which is hereby incorporated by reference herein in its entirety as if set forth fully herein.
Accordingly, embodiments of the present invention provide an ohmic layer 122 consisting essentially of nickel.
Second embodiments of the invention also use a reflector layer 124 comprising silver. Silver can be an excellent reflector. Moreover, the barrier layer 126 and bonding layer 128 are chemically stable layers that can protect the nickel and the silver mirror from chemical attack and/or oxidation. The resulting reflective ohmic contacts 120 according to embodiments of the present invention can have low optical absorption and low electrical loss.
Conventional silicon carbide contacts of annealed or sintered nickel that include substantial amounts of nickel oxides, or of as-deposited ohmics such as Ti/Pt/Au, may be electrically and/or optically lossy. Since these traditional contacts may be lossy, the amount of coverage on the silicon carbide substrate surface may be limited conventionally, to avoid absorption and attenuation of the incident and reflected light. More specifically, in a light emitting diode, a conventional contact to the n-type silicon carbide substrate may be a grid that may cover only about 20% of the silicon carbide substrate surface. This grid may be formed using a photolithography process step, whereby the ohmic metal can be patterned as a grid by selectively depositing or adding the metal to the silicon carbide surface, or by selectively etching or subtracting deposited metal from the silicon carbide surface.
The conventional grid contact allows the silver epoxy used for the die attach to act as a reflector on the silicon caxbide between the grid lines of the ohmic metal.
In sharp contrast, reflective ohmic contacts according to some embodiments of the present invention can provide greater contact area and in some embodiments, can cover the entire substrate face, which can improve the electrical resistance of the metal-silicon carbide interface, while providing the reflective nature of silver epoxy.
The larger contact area can also reduce the need for lower specific contact resistance between the silicon carbide and the ohmic metal. Moreover, the ability to place the metal fully over the silicon carbide surface, according to some embodiments of the present invention, without the need to provide photolithography, can provide a reduction in labor, handling and potential wafer breakage, cycle time, outgoing inspection activity and/or cost, as compared to a conventional grid contact approach that is used to fabricate silicon carbide-based LED wafers and chips.
It also will be understood that the thickness of the barrier and bonding layers may be varied, depending upon the external element that is bonded to the bonding layer. For example, in embodiments of the present invention that are shown in Figures 2 and 3, the bond pad is also the ohmic contact to the silicon carbide substrate. These embodiments of the present invention may employ a barrier layer 126 comprising platinum having a thickness of about 1000., and a bonding layer comprising gold having a thickness of about 1 Vim. A low loss reflective substrate contact-bond pad combination thereby may be formed.
In the drawings and specification, there have been disclosed embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
Claims (46)
1. A reflective ohmic contact for silicon carbide comprising:
a layer consisting essentially of nickel on the silicon carbide, which is configured to provide an ohmic contact to the silicon carbide and to allow transmission therethrough of optical radiation that emerges from the silicon carbide;
a reflector layer on the layer consisting essentially of nickel opposite the silicon carbide;
a barrier layer on the reflector layer opposite the layer consisting essentially of nickel; and a bonding layer on the barrier layer opposite the reflector layer.
a layer consisting essentially of nickel on the silicon carbide, which is configured to provide an ohmic contact to the silicon carbide and to allow transmission therethrough of optical radiation that emerges from the silicon carbide;
a reflector layer on the layer consisting essentially of nickel opposite the silicon carbide;
a barrier layer on the reflector layer opposite the layer consisting essentially of nickel; and a bonding layer on the barrier layer opposite the reflector layer.
2. A reflective ohmic contact according to Claim 1 wherein the layer consisting essentially of nickel is sufficiently thick to provide an ohmic contact to the silicon carbide, but is sufficiently thin to allow transmission therethrough of optical radiation that emerges from the silicon carbide.
3. A reflective ohmic contact according to Claim 2 wherein the layer consisting essentially of nickel is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the silicon carbide.
4. A reflective ohmic contact according to Claim 2 wherein the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer consisting essentially of nickel.
5. A reflective ohmic contact according to Claim 1 wherein the silicon carbide includes a surface and wherein the layer consisting essentially of nickel covers the surface.
6. A reflective ohmic contact according to Claim 1 wherein the silicon carbide is n-type silicon carbide.
7. A reflective ohmic contact according to Claim 1 in combination with a diode region on the silicon carbide.
8. A reflective ohmic contact according to Claim 1 wherein the layer consisting essentially of nickel is a layer consisting of unannealed nickel.
9. A reflective ohmic contact according to Claim 7 in further combination with a mounting assembly on the bonding layer opposite the barrier layer.
10. A reflective ohmic contact according to Claim 1 wherein the layer consisting essentially of nickel is between about 15.ANG.. and about 100.ANG.
thick.
thick.
11. A reflective ohmic contact according to Claim 1 wherein the layer consisting essentially of nickel is between about 15.ANG. and about 25.ANG.
thick.
thick.
12. A reflective ohmic contact according to Claim 1 wherein the reflector layer comprises silver and/or aluminum.
13. A reflective ohmic contact according to Claim 1 wherein the barrier layer comprises platinum.
14. A reflective ohmic contact according to Claim 1 wherein the bonding layer comprises gold.
15. A contact for silicon carbide comprising:
a first layer consisting essentially of nickel on the silicon carbide;
a second layer comprising silver and/or aluminum on the first layer opposite the silicon carbide;
a third layer comprising platinum on the second layer opposite the first layer;
and a fourth layer comprising gold on the third layer opposite the second layer.
a first layer consisting essentially of nickel on the silicon carbide;
a second layer comprising silver and/or aluminum on the first layer opposite the silicon carbide;
a third layer comprising platinum on the second layer opposite the first layer;
and a fourth layer comprising gold on the third layer opposite the second layer.
16. A contact according to Claim 15 wherein the silicon carbide includes a surface and wherein the first layer covers the surface.
17. A contact according to Claim 15 wherein the silicon carbide is n-type silicon carbide.
18. A contact according to Claim 15 in combination with a diode region on the silicon carbide.
19. A contact according to Claim 15 wherein the first layer consists of unannealed nickel.
20. A contact according to Claim 18 in further combination with a mounting assembly on the fourth layer opposite the third layer.
21. A contact according to Claim 15 wherein the first layer is between about 15.ANG. and about 100.ANG. thick.
22. A contact according to Claim 15 wherein the second layer is at least about 700 thick.
23. A contact according to Claim 15 wherein the third layer is at least about 250.ANG. thick.
24. A contact according to Claim 15 wherein the fourth layer is at least about 250.ANG. thick.
25. A light emitting device comprising:
a silicon carbide substrate having first and second opposing faces;
a light emitting region on the second face;
an ohmic contact on the diode region opposite the second face;
a layer consisting essentially of nickel on the first face, which is configured to provide an ohmic contact to the first face and to allow transmission therethrough of optical radiation that emerges from the first face;
a reflector layer on the layer consisting essentially of nickel opposite the first face;
a barrier layer on the reflector layer opposite the layer consisting essentially of nickel; and a bonding layer on the barrier layer opposite the reflector layer.
a silicon carbide substrate having first and second opposing faces;
a light emitting region on the second face;
an ohmic contact on the diode region opposite the second face;
a layer consisting essentially of nickel on the first face, which is configured to provide an ohmic contact to the first face and to allow transmission therethrough of optical radiation that emerges from the first face;
a reflector layer on the layer consisting essentially of nickel opposite the first face;
a barrier layer on the reflector layer opposite the layer consisting essentially of nickel; and a bonding layer on the barrier layer opposite the reflector layer.
26. A device according to Claim 25 wherein the layer consisting essentially of nickel is sufficiently thick to provide an ohmic contact to the silicon carbide, but is sufficiently thin to allow transmission therethrough of optical radiation that emerges from the silicon carbide.
27. A device according to Claim 26 wherein the layer consisting essentially of nickel is sufficiently thin to allow transmission therethrough of substantially all optical radiation that emerges from the first face.
28. A device according to Claim 26 wherein the reflector layer is sufficiently thick to reflect substantially all optical radiation that emerges from the layer consisting essentially of nickel.
29. A device according to Claim 25 wherein the layer consisting essentially of nickel covers the first face.
30. A device according to Claim 25 wherein the layer consisting essentially of nickel is a layer consisting of unannealed nickel.
31. A device according to Claim 25 in further combination with a mounting assembly on the bonding layer opposite the barrier layer.
32. A device according to Claim 25 wherein the layer consisting essentially of nickel is between about 15.ANG. and about 100.ANG. thick.
33. A device according to Claim 25 wherein the reflector layer comprises silver and/or aluminum.
34. A device according to Claim 25 wherein the barrier layer comprises platinum.
35. A device according to Claim 25 wherein the bonding layer comprises gold.
36. A light emitting device comprising:
a silicon carbide substrate having first and second opposing faces;
a light emitting region on the second face;
an ohmic contact on the light emitting region opposite the second face;
a first layer consisting essentially of nickel on the first face;
a second layer comprising silver and/or aluminum on the first layer opposite the first face;
a third layer comprising platinum on the second layer opposite the first layer;
and a fourth layer comprising gold on the third layer opposite the second layer.
a silicon carbide substrate having first and second opposing faces;
a light emitting region on the second face;
an ohmic contact on the light emitting region opposite the second face;
a first layer consisting essentially of nickel on the first face;
a second layer comprising silver and/or aluminum on the first layer opposite the first face;
a third layer comprising platinum on the second layer opposite the first layer;
and a fourth layer comprising gold on the third layer opposite the second layer.
37. A device according to Claim 36 wherein the first layer covers the first face.
38. A device according to Claim 36 wherein the first layer consists of unannealed nickel.
39. A device according to Claim 36 in further combination with a mounting assembly on the fourth layer opposite the third layer.
40. A device according to Claim 36 wherein the first layer is between about 15.ANG. and about 100.ANG. thick.
41. A device according to Claim 36 wherein the second layer is at least about 700.ANG. thick.
42. A device according to Claim 36 wherein the third layer is at least about 250.ANG. thick.
43. A device according to Claim 36 wherein the fourth layer is at least about 250.ANG. thick.
44. A method of fabricating a light emitting device comprising:
depositing a first layer consisting essentially of nickel on a first face of a silicon carbide substrate that includes a light emitting region on a second face thereof;
depositing a second layer comprising silver and/or aluminum on the first layer opposite the first face;
depositing a third layer comprising platinum on the second layer opposite the first layer;
depositing a fourth layer comprising gold on the third layer opposite the second layer; and bonding the fourth layer to an external element, wherein annealing is not performed during the depositing a first layer, between the depositing a first layer and the depositing a second layer, between the depositing a second layer and the depositing a third layer, between the depositing a third layer and the depositing a fourth layer, between the depositing a fourth layer and the bonding the fourth layer, and during the bonding the fourth layer.
depositing a first layer consisting essentially of nickel on a first face of a silicon carbide substrate that includes a light emitting region on a second face thereof;
depositing a second layer comprising silver and/or aluminum on the first layer opposite the first face;
depositing a third layer comprising platinum on the second layer opposite the first layer;
depositing a fourth layer comprising gold on the third layer opposite the second layer; and bonding the fourth layer to an external element, wherein annealing is not performed during the depositing a first layer, between the depositing a first layer and the depositing a second layer, between the depositing a second layer and the depositing a third layer, between the depositing a third layer and the depositing a fourth layer, between the depositing a fourth layer and the bonding the fourth layer, and during the bonding the fourth layer.
45. A method according to Claim 44 wherein patterning also is not performed during the depositing a first layer, between the depositing a first layer and the depositing a second layer, between the depositing a second layer and the depositing a third layer, between the depositing a third layer and the depositing a fourth layer and between the depositing a fourth layer and the bonding the fourth layer.
46. A method according to Claim 44 wherein the depositing a first layer, the depositing a second layer, the depositing a third layer and the depositing a fourth layer all are performed at room temperature.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/368,063 US6794684B2 (en) | 2001-02-01 | 2003-02-14 | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
| US10/368,063 | 2003-02-14 | ||
| PCT/US2004/003564 WO2004075309A2 (en) | 2003-02-14 | 2004-01-30 | Reflective ohmic contact for silicon carbide, light emitting diode in including the same, and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2515287A1 true CA2515287A1 (en) | 2004-09-02 |
Family
ID=32907632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002515287A Abandoned CA2515287A1 (en) | 2003-02-14 | 2004-01-30 | Reflective ohmic contact for silicon carbide, light emitting diode in including the same, and manufacturing method |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6794684B2 (en) |
| EP (1) | EP1593166A2 (en) |
| JP (1) | JP2006518113A (en) |
| KR (1) | KR101076958B1 (en) |
| CN (1) | CN100459187C (en) |
| CA (1) | CA2515287A1 (en) |
| MY (1) | MY127699A (en) |
| TW (1) | TW200428680A (en) |
| WO (1) | WO2004075309A2 (en) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692182B2 (en) | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
| JP2003086843A (en) * | 2001-09-14 | 2003-03-20 | Sharp Corp | Semiconductor light emitting element and semiconductor light emitting device |
| US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
| US6831302B2 (en) | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
| US7521854B2 (en) * | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
| US7262550B2 (en) * | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
| US7105861B2 (en) * | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
| US7274043B2 (en) | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
| US7667238B2 (en) * | 2003-04-15 | 2010-02-23 | Luminus Devices, Inc. | Light emitting devices for liquid crystal displays |
| US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
| US7084434B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
| US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
| US7098589B2 (en) | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
| US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
| US7166871B2 (en) * | 2003-04-15 | 2007-01-23 | Luminus Devices, Inc. | Light emitting systems |
| US7211831B2 (en) * | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
| US7344903B2 (en) * | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
| US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
| EP1690301B1 (en) * | 2003-11-12 | 2012-08-15 | Cree, Inc. | Methods of processing semiconductor wafer backsides having light emitting diodes (leds) thereon |
| US7450311B2 (en) | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
| US7332861B2 (en) * | 2004-02-05 | 2008-02-19 | Agilight, Inc. | Light-emitting structures |
| DE102005013894B4 (en) * | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation generating semiconductor chip and method for its production |
| US7557380B2 (en) * | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
| TWI374552B (en) | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
| US20060038188A1 (en) | 2004-08-20 | 2006-02-23 | Erchak Alexei A | Light emitting diode systems |
| US7675079B1 (en) * | 2004-10-28 | 2010-03-09 | Kley Victor B | Diamond coating of silicon-carbide LEDs |
| US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
| US7170100B2 (en) | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
| US20070045640A1 (en) * | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
| US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
| JP2007194385A (en) * | 2006-01-19 | 2007-08-02 | Stanley Electric Co Ltd | Semiconductor light emitting device, and method of manufacturing same |
| EP2008314A4 (en) * | 2006-04-18 | 2009-12-30 | Epivalley Co Ltd | Iii-nitride semiconductor light emitting device and method for manufacturing the same |
| JP5308618B2 (en) * | 2006-04-26 | 2013-10-09 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| KR20090031370A (en) | 2006-05-23 | 2009-03-25 | 크리 엘이디 라이팅 솔루션즈, 인크. | Lighting device |
| US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
| US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
| JP5282382B2 (en) * | 2007-08-17 | 2013-09-04 | 富士電機株式会社 | Silicon carbide semiconductor device, manufacturing method thereof, and silicon carbide device |
| JP5315070B2 (en) * | 2008-02-07 | 2013-10-16 | 昭和電工株式会社 | Compound semiconductor light emitting diode |
| JP2011512037A (en) | 2008-02-08 | 2011-04-14 | イルミテックス， インコーポレイテッド | System and method for emitter layer shaping |
| US7791101B2 (en) * | 2008-03-28 | 2010-09-07 | Cree, Inc. | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices |
| US8815618B2 (en) | 2008-08-29 | 2014-08-26 | Tsmc Solid State Lighting Ltd. | Light-emitting diode on a conductive substrate |
| KR101154758B1 (en) * | 2008-11-18 | 2012-06-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device and LED package having the same |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| TW201027594A (en) * | 2009-01-07 | 2010-07-16 | Advanced Optoelectronic Tech | Method for bonding two matertials |
| US9437785B2 (en) * | 2009-08-10 | 2016-09-06 | Cree, Inc. | Light emitting diodes including integrated backside reflector and die attach |
| CN101996943B (en) * | 2009-08-18 | 2013-12-04 | 展晶科技(深圳)有限公司 | Method for separating material layer |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8604461B2 (en) | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
| JP5885284B2 (en) | 2013-09-05 | 2016-03-15 | 富士電機株式会社 | Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device |
| US10650937B2 (en) * | 2015-12-28 | 2020-05-12 | The University Of Florida Research Foundation, Inc | Low OHMIC loss superlattice conductors |
| US9917171B2 (en) * | 2016-07-21 | 2018-03-13 | International Business Machines Corporation | Low-resistive, CMOS-compatible, Au-free ohmic contact to N—InP |
| CN108198926A (en) * | 2018-01-31 | 2018-06-22 | 南昌大学 | A kind of film-type AlGaInP light-emitting diode chip for backlight unit and preparation method thereof |
| CN110261384A (en) * | 2019-07-24 | 2019-09-20 | 苏州华楷微电子有限公司 | A kind of detection device and detection method of silicon carbide plate |
Family Cites Families (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611064A (en) * | 1969-07-14 | 1971-10-05 | Gen Electric | Ohmic contact to n-type silicon carbide, comprising nickel-titanium-gold |
| JPS56131977A (en) | 1980-03-19 | 1981-10-15 | Sanyo Electric Co Ltd | Manufacture of gan light emitting diode |
| DE3041358A1 (en) | 1980-11-03 | 1982-06-09 | Siemens AG, 1000 Berlin und 8000 München | LIGHT REFLECTIVE OHMSCHER CONTACT FOR COMPONENTS |
| JPS61110476A (en) | 1984-11-02 | 1986-05-28 | Nec Corp | Infrared light emitting diode |
| JPH01225377A (en) | 1988-03-04 | 1989-09-08 | Mitsubishi Cable Ind Ltd | Led array |
| US5187547A (en) | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
| US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| JP2704181B2 (en) | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | Method for growing compound semiconductor single crystal thin film |
| US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
| US5338994A (en) | 1989-07-20 | 1994-08-16 | General Electric Company | Method and apparatus for achieving current balance in parallel connected switching devices |
| US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| JP2593960B2 (en) | 1990-11-29 | 1997-03-26 | シャープ株式会社 | Compound semiconductor light emitting device and method of manufacturing the same |
| JP3160914B2 (en) | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | Gallium nitride based compound semiconductor laser diode |
| JP2666228B2 (en) | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| KR100286699B1 (en) | 1993-01-28 | 2001-04-16 | 오가와 에이지 | Gallium Nitride Group 3-5 Compound Semiconductor Light-Emitting Device and Manufacturing Method Thereof |
| JP2728190B2 (en) | 1993-02-05 | 1998-03-18 | 日亜化学工業株式会社 | Semiconductor laser device |
| US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
| US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| JPH07235729A (en) | 1994-02-21 | 1995-09-05 | Nichia Chem Ind Ltd | Gallium nitride compound semiconductor laser element |
| US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
| US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
| US5777350A (en) | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| US5585648A (en) | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
| US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
| JPH08321660A (en) | 1995-05-25 | 1996-12-03 | Nichia Chem Ind Ltd | Nitride semiconductor laser device |
| JP2995284B2 (en) * | 1995-08-25 | 1999-12-27 | 工業技術院長 | Electrode making method |
| JPH0982587A (en) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | Preparation of nonsquare electronic chip |
| US5917202A (en) | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
| US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
| JP3617565B2 (en) | 1996-02-16 | 2005-02-09 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
| US5760479A (en) | 1996-02-29 | 1998-06-02 | Texas Instruments Incorporated | Flip-chip die attachment for a high temperature die to substrate bond |
| US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| JP3087831B2 (en) | 1996-11-27 | 2000-09-11 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP3309953B2 (en) | 1997-02-21 | 2002-07-29 | 日亜化学工業株式会社 | Nitride semiconductor laser diode |
| JPH10256604A (en) | 1997-03-11 | 1998-09-25 | Rohm Co Ltd | Semiconductor light emitting element |
| JP3769872B2 (en) | 1997-05-06 | 2006-04-26 | ソニー株式会社 | Semiconductor light emitting device |
| US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
| US6121637A (en) | 1997-10-03 | 2000-09-19 | Rohm Co., Ltd. | Semiconductor light emitting device with increased luminous power |
| US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| JP3130292B2 (en) | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| US6015719A (en) | 1997-10-24 | 2000-01-18 | Hewlett-Packard Company | Transparent substrate light emitting diodes with directed light output |
| JP3356034B2 (en) | 1997-11-14 | 2002-12-09 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| US5952681A (en) | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
| JPH11220168A (en) | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor device and manufacture thereof |
| US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| US6046465A (en) | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
| WO1999056504A1 (en) | 1998-04-29 | 1999-11-04 | Koninklijke Philips Electronics N.V. | Circuit arrangement for a semiconductor light source |
| JPH11340576A (en) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor device |
| US6194742B1 (en) | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
| JP2002520826A (en) | 1998-07-01 | 2002-07-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Circuit arrangement and signal light provided with the circuit arrangement |
| US6097041A (en) | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
| JP2000077713A (en) | 1998-08-27 | 2000-03-14 | Sanyo Electric Co Ltd | Semiconductor light-emitting element |
| US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
| US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6204523B1 (en) | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| JP2000195827A (en) | 1998-12-25 | 2000-07-14 | Oki Electric Ind Co Ltd | Led array chip and its manufacture, and dicing device |
| US6201264B1 (en) | 1999-01-14 | 2001-03-13 | Lumileds Lighting, U.S., Llc | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
| US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
| US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
| US6139166A (en) | 1999-06-24 | 2000-10-31 | Lumileds Lighting B.V. | Luminaire having beam splitters for mixing light from different color ' LEDs |
| US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
| US6992334B1 (en) * | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
| TWI292227B (en) * | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
| JP4024994B2 (en) | 2000-06-30 | 2007-12-19 | 株式会社東芝 | Semiconductor light emitting device |
| US6534797B1 (en) * | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| US6630689B2 (en) | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| US6455878B1 (en) | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
| US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US6787435B2 (en) * | 2001-07-05 | 2004-09-07 | Gelcore Llc | GaN LED with solderable backside metal |
| US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| EP2287930B1 (en) * | 2002-07-22 | 2019-06-05 | Cree, Inc. | Light emitting diode including barrier layers and manufacturing method therefor |
-
2003
- 2003-02-14 US US10/368,063 patent/US6794684B2/en not_active Expired - Lifetime
-
2004
- 2004-01-30 KR KR1020057014638A patent/KR101076958B1/en active IP Right Grant
- 2004-01-30 CN CNB2004800038041A patent/CN100459187C/en not_active Expired - Lifetime
- 2004-01-30 EP EP04707133A patent/EP1593166A2/en not_active Withdrawn
- 2004-01-30 CA CA002515287A patent/CA2515287A1/en not_active Abandoned
- 2004-01-30 WO PCT/US2004/003564 patent/WO2004075309A2/en active Application Filing
- 2004-01-30 JP JP2006503402A patent/JP2006518113A/en active Pending
- 2004-02-11 TW TW093103190A patent/TW200428680A/en unknown
- 2004-02-12 MY MYPI20040440A patent/MY127699A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| MY127699A (en) | 2006-12-29 |
| WO2004075309A3 (en) | 2005-07-07 |
| CN100459187C (en) | 2009-02-04 |
| KR20050100664A (en) | 2005-10-19 |
| KR101076958B1 (en) | 2011-10-26 |
| US6794684B2 (en) | 2004-09-21 |
| US20030168663A1 (en) | 2003-09-11 |
| CN1748325A (en) | 2006-03-15 |
| JP2006518113A (en) | 2006-08-03 |
| TW200428680A (en) | 2004-12-16 |
| EP1593166A2 (en) | 2005-11-09 |
| WO2004075309A2 (en) | 2004-09-02 |
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