CA2516916A1 - Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices - Google Patents
Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices Download PDFInfo
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- CA2516916A1 CA2516916A1 CA002516916A CA2516916A CA2516916A1 CA 2516916 A1 CA2516916 A1 CA 2516916A1 CA 002516916 A CA002516916 A CA 002516916A CA 2516916 A CA2516916 A CA 2516916A CA 2516916 A1 CA2516916 A1 CA 2516916A1
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- electronic device
- substrate
- recited
- forming
- group iii
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Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract 28
- 238000000034 method Methods 0.000 title claims abstract 19
- 239000000758 substrate Substances 0.000 claims abstract 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 11
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 230000000873 masking effect Effects 0.000 claims 5
- 238000010897 surface acoustic wave method Methods 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 239000007943 implant Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
- H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
Abstract
A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.
Claims (44)
1. A monolithic electronic device, comprising:
a substrate;
a piezoelectric Group III-nitride epitaxial layer formed on the substrate;
a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; and at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact;
wherein the metal contact is electrically connected to at least one of the input and/or the output transducers.
a substrate;
a piezoelectric Group III-nitride epitaxial layer formed on the substrate;
a plurality of metal fingers formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of metal fingers and the semi-insulating region together forming a surface acoustic wave device, the plurality of metal fingers forming an input transducer and an output transducer; and at least one electronic device formed on the substrate, the at least one electronic device comprising a metal contact;
wherein the metal contact is electrically connected to at least one of the input and/or the output transducers.
2. A monolithic electronic device as recited in Claim 1, wherein the at least one electronic device comprises a transistor.
3. A monolithic electronic device as recited in Claim 1, wherein the at least one electronic device comprises a photodiode.
4. A monolithic electronic device as recited in Claim 1, wherein the at least one electronic device comprises a light emitting diode.
5. A monolithic electronic device as recited in Claim 1, wherein the piezoelectric epitaxial layer comprises Al x Ga1-x N (0<=x<=1).
6. A monolithic electronic device as recited in Claim 5, wherein the piezoelectric epitaxial layer comprises single crystal AlN.
7. A monolithic electronic device as recited in Claim 1, wherein the piezoelectric epitaxial layer comprises In y Al x Ga1-x-y N
(0<=x<=1, 0<=y<=1, x+y<=1).
(0<=x<=1, 0<=y<=1, x+y<=1).
8. A monolithic electronic device as recited in Claim 1, wherein the at least one electronic device is formed on a mesa adjacent the surface acoustic wave device.
9. A monolithic electronic device as recited in Claim 1, wherein the plurality of metal fingers comprise aluminum.
10. A monolithic electronic device as recited in Claim 1, further comprising a trench between the surface acoustic wave device and the at least one electronic device.
11. A monolithic electronic device as recited in Claim 10, wherein the trench extends through the piezoelectric epitaxial layer into the substrate.
12. A monolithic electronic device as recited in Claim 1, wherein the at least one electronic device comprises a silicon carbide MESFET.
13. A monolithic electronic device as recited in Claim 1, wherein the plurality of metal fingers are oriented at an angle with respect to an edge of the monolithic electronic device die.
14. A monolithic electronic device as recited in Claim 1, further comprising a SAW absorber adjacent at least one of the input and/or output transducers.
15. A monolithic electronic device as recited in Claim 1, further comprising a SAW reflector adjacent at least one of the input and/or output transducers.
16. A monolithic electronic device as recited in Claim 1, wherein the metal fingers are formed above an implanted, electrically inactive region.
17. A monolithic electronic device as recited in Claim 6, wherein the piezoelectric epitaxial layer comprising A1N is formed directly on the substrate.
18. A monolithic electronic device as recited in Claim 17, wherein the thickness of the piezoelectric epitaxial layer comprising AlN is less than one SAW
wavelength.
wavelength.
19. A monolithic electronic device as recited in Claim 17, wherein the thickness of the piezoelectric epitaxial layer comprising AlN is greater than or equal to one SAW wavelength.
20. A monolithic electronic device as recited in Claim 1, wherein the substrate comprises SiC.
21. A monolithic electronic device as recited in Claim 1, wherein the substrate is selected from the group consisting of sapphire, aluminum nitride, aluminum gallium nitride, gallium nitride, silicon, GaAs, LGO, ZnO, LAO, and InP.
22. A monolithic electronic device, comprising:
a substrate;
a Group III-nitride epitaxial layer formed on the substrate;
a plurality of interdigital transducers (IDTs) formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of IDTs and the semi-insulating region together forming a surface acoustic wave device; and at least one electronic device formed on the substrate.
a substrate;
a Group III-nitride epitaxial layer formed on the substrate;
a plurality of interdigital transducers (IDTs) formed on a semi-insulating region of the Group III-nitride epitaxial layer, the plurality of IDTs and the semi-insulating region together forming a surface acoustic wave device; and at least one electronic device formed on the substrate.
23. A monolithic electronic device, comprising:
a substrate;
a Group III-nitride epitaxial layer formed on the substrate;
a surface acoustic wave device formed on a semi-insulating region of the Group III-nitride epitaxial layer, and at least one electronic device formed on the substrate.
a substrate;
a Group III-nitride epitaxial layer formed on the substrate;
a surface acoustic wave device formed on a semi-insulating region of the Group III-nitride epitaxial layer, and at least one electronic device formed on the substrate.
24. A method of fabricating a monolithic electronic device on a semiconductor substrate, comprising:
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a plurality of epitaxial layers on the buffer layer;
exposing a portion of a surface of the buffer layer;
forming gate, source and drain contacts on the plurality of epitaxial layers to define a transistor device; and forming interdigital transducers on the exposed portion of the buffer layer to define a SAW device.
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a plurality of epitaxial layers on the buffer layer;
exposing a portion of a surface of the buffer layer;
forming gate, source and drain contacts on the plurality of epitaxial layers to define a transistor device; and forming interdigital transducers on the exposed portion of the buffer layer to define a SAW device.
25. A method according to Claim 24, wherein the Group III nitride comprises Al xGa1-xN (0<=x<=1).
26. A method according to Claim 24, wherein the Group III nitride comprises InyAl x Ga1-x-yN (0<=x<=1, 0<=y<=1, x+y <=1).
27. A method according to Claim 24, wherein the step of exposing a portion of a surface of the buffer layer comprises etching the plurality of epitaxial layers.
28. A method according to Claim 24, further comprising masking the buffer layer with a mask;
forming an opening in the mask;
growing the plurality of epitaxial layers through the opening; and removing the mask.
forming an opening in the mask;
growing the plurality of epitaxial layers through the opening; and removing the mask.
29. A method according to Claim 24, further comprising:
etching a trench between the transistor device and the SAW device to isolate the SAW
device.
etching a trench between the transistor device and the SAW device to isolate the SAW
device.
30. A method according to Claim 29, wherein the trench is etched to a depth greater than or equal to one SAW wavelength.
31. A method according to Claim 29, wherein the trench is etched into the substrate.
32. A method of fabricating a monolithic electronic device on a semiconductor substrate, comprising:
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a plurality of epitaxial layers on the buffer layer;
forming gate, source and drain contacts on the plurality of epitaxial layers to define a transistor device;
masking the plurality of epitaxial layers with an implant mask;
implanting ions into the plurality of epitaxial layers to form an implanted region of the epitaxial layers that is semiinsulating; and forming interdigital transducers on the implanted region to define a SAW
device.
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a plurality of epitaxial layers on the buffer layer;
forming gate, source and drain contacts on the plurality of epitaxial layers to define a transistor device;
masking the plurality of epitaxial layers with an implant mask;
implanting ions into the plurality of epitaxial layers to form an implanted region of the epitaxial layers that is semiinsulating; and forming interdigital transducers on the implanted region to define a SAW
device.
33. A method according to Claim 32, wherein the Group III nitride comprises Al x Ga1-xN (0<=x<=1).
34. A method according to Claim 32, wherein the Group III nitride comprises InyAl x Ga1x-yN (0<=x<=l, 0<=y<=1, x+y <=1).
35. A method according to Claim 32, further comprising:
masking the plurality of epitaxial layers with an implant mask;
implanting ions into the plurality of epitaxial layers to form an implanted region of the epitaxial layers that is semiinsulating; and forming the interdigital transducers on the implanted region.
masking the plurality of epitaxial layers with an implant mask;
implanting ions into the plurality of epitaxial layers to form an implanted region of the epitaxial layers that is semiinsulating; and forming the interdigital transducers on the implanted region.
36. A method according to Claim 32, further comprising:
forming a trench between the transistor device and the SAW device.
forming a trench between the transistor device and the SAW device.
37. A method according to claim 36, wherein the trench is etched to a depth greater than or equal to one SAW wavelength.
38. A method of fabricating a monolithic electronic device on a semiconductor substrates comprising:
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a channel layer on the buffer layer;
forming a barrier layer on the channel layer;
forming an etch mask on the barrier layer;
etching a portion of the barrier layer to expose a portion of the channel layer;
removing the etch mask;
forming gate, source and drain contacts on the barrier layers to define a transistor device; and forming interdigital transducers on the exposed portion of the channel layer to define a SAW device.
forming a buffer layer on the substrate, the buffer layer comprising a Group III
nitride;
forming a channel layer on the buffer layer;
forming a barrier layer on the channel layer;
forming an etch mask on the barrier layer;
etching a portion of the barrier layer to expose a portion of the channel layer;
removing the etch mask;
forming gate, source and drain contacts on the barrier layers to define a transistor device; and forming interdigital transducers on the exposed portion of the channel layer to define a SAW device.
39. A method according to Claim 38, wherein the Group III nitride comprises A1xGa1-xN (0<=x<=1).
40. A method according to Claim 38, wherein the Group III nitride comprises InyA1xGa1-x-yN (0<=x<=1, 0<=y<=1, x+y <=1).
41. A method of fabricating a monolithic electronic device on a silicon carbide substrate, comprising:
forming an epitaxial layer of silicon carbide on the substrate;
masking the silicon carbide epitaxial layer with an etch mask;
etching a portion of the silicon carbide epitaxial layer to expose a portion of the substrate;
masking the silicon carbide epitaxial layer with a growth mask;
growing a layer of a Group III nitride on the exposed substrate;
forming gate, source and drain contacts on the silicon carbide epitaxial layer to define a transistor device; and forming interdigital transducers on the Group III nitride layer to define a SAW
device.
forming an epitaxial layer of silicon carbide on the substrate;
masking the silicon carbide epitaxial layer with an etch mask;
etching a portion of the silicon carbide epitaxial layer to expose a portion of the substrate;
masking the silicon carbide epitaxial layer with a growth mask;
growing a layer of a Group III nitride on the exposed substrate;
forming gate, source and drain contacts on the silicon carbide epitaxial layer to define a transistor device; and forming interdigital transducers on the Group III nitride layer to define a SAW
device.
42. A method according to Claim 41, wherein the Group III nitride comprises A1xGa1-xN (0<=x<=1).
43. A method according to Claim 41, wherein the Group III nitride comprises InyA1xGa1-x-yN (0<=x<=l, 0<=y<=1, x+y <=1).
44. A method according to Claim 41 wherein the growth mask extends across the exposed substrate for a predetermined distance so that the Group III nitride layer is spaced apart from the silicon carbide epitaxial layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/378,331 | 2003-03-03 | ||
| US10/378,331 US7112860B2 (en) | 2003-03-03 | 2003-03-03 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
| PCT/US2004/006232 WO2004079904A2 (en) | 2003-03-03 | 2004-03-01 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2516916A1 true CA2516916A1 (en) | 2004-09-16 |
| CA2516916C CA2516916C (en) | 2012-12-18 |
Family
ID=32926467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2516916A Expired - Lifetime CA2516916C (en) | 2003-03-03 | 2004-03-01 | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7112860B2 (en) |
| EP (1) | EP1599938B1 (en) |
| JP (1) | JP4740836B2 (en) |
| KR (1) | KR101065096B1 (en) |
| CN (1) | CN100557966C (en) |
| AT (1) | ATE453247T1 (en) |
| CA (1) | CA2516916C (en) |
| DE (1) | DE602004024764D1 (en) |
| WO (1) | WO2004079904A2 (en) |
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|---|---|
| US7875910B2 (en) | 2011-01-25 |
| KR101065096B1 (en) | 2011-09-16 |
| US8502235B2 (en) | 2013-08-06 |
| CA2516916C (en) | 2012-12-18 |
| EP1599938A2 (en) | 2005-11-30 |
| WO2004079904A3 (en) | 2005-01-27 |
| EP1599938B1 (en) | 2009-12-23 |
| DE602004024764D1 (en) | 2010-02-04 |
| ATE453247T1 (en) | 2010-01-15 |
| US20060289901A1 (en) | 2006-12-28 |
| JP2006524016A (en) | 2006-10-19 |
| US20040173816A1 (en) | 2004-09-09 |
| CN1757161A (en) | 2006-04-05 |
| CN100557966C (en) | 2009-11-04 |
| US7112860B2 (en) | 2006-09-26 |
| WO2004079904A2 (en) | 2004-09-16 |
| JP4740836B2 (en) | 2011-08-03 |
| US20110114968A1 (en) | 2011-05-19 |
| KR20050117529A (en) | 2005-12-14 |
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