CA2570424A1 - Storage elements using nanotube switching elements - Google Patents
Storage elements using nanotube switching elements Download PDFInfo
- Publication number
- CA2570424A1 CA2570424A1 CA002570424A CA2570424A CA2570424A1 CA 2570424 A1 CA2570424 A1 CA 2570424A1 CA 002570424 A CA002570424 A CA 002570424A CA 2570424 A CA2570424 A CA 2570424A CA 2570424 A1 CA2570424 A1 CA 2570424A1
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- Prior art keywords
- input
- data
- circuit
- storage element
- inverter
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
Abstract
Data storage circuits and components of such circuits constructed using nanotube switching elements. The storage circuits may be stand-alone devices or cells incorporated into other devices or circuits. The data storage circuits include or can be used in latches, master-slave flip-flops, digital logic circuits, memory devices and other circuits. In one aspect of the invention, a master-slave flip-flop is constructed using one or more nanotube switching element-based storage devices. The master storage element or the slave storage element or both may be constructed using nanotube switching elements, for example, using two nanotube switching element-based inverters.
The storage elements may be volatile or non-volatile. An equilibration device is provided for protecting the stored data from fluctuations on the inputs.
Input buffers and output buffers for data storage circuits of the invention may also be constructed using nanotube switching elements.
The storage elements may be volatile or non-volatile. An equilibration device is provided for protecting the stored data from fluctuations on the inputs.
Input buffers and output buffers for data storage circuits of the invention may also be constructed using nanotube switching elements.
Claims (31)
1. A master-slave flip-flop circuit, comprising:
a data input;
a first clock input and a second clock input for providing non-overlapping first and second clock signals;
a first input buffer coupled to the data input and the first clock input for gating the data input under the control of the first clock input;
a master storage element coupled to the input buffer for storing a first data value representative of the data input, wherein the master storage element is constructed of at least one nanotube switching element;
a second input buffer coupled to the master storage element and the second clock input for gating the first data value under the control of the second clock input;
a slave storage element coupled to the second input buffer for storing a second data value representative of the first data value, wherein the slave storage element is constructed of at least one nanotube switching element; and a data output coupled to the slave storage element.
a data input;
a first clock input and a second clock input for providing non-overlapping first and second clock signals;
a first input buffer coupled to the data input and the first clock input for gating the data input under the control of the first clock input;
a master storage element coupled to the input buffer for storing a first data value representative of the data input, wherein the master storage element is constructed of at least one nanotube switching element;
a second input buffer coupled to the master storage element and the second clock input for gating the first data value under the control of the second clock input;
a slave storage element coupled to the second input buffer for storing a second data value representative of the first data value, wherein the slave storage element is constructed of at least one nanotube switching element; and a data output coupled to the slave storage element.
2. The circuit of claim 1, wherein the data input, the first data value, the second data value and the data output are differential.
3. The circuit of claim 1, wherein the master storage element and the slave storage element are non-volatile.
4. The circuit of claim 1, wherein the master storage element and the slave storage element are constructed using non-volatile four-terminal nanotube switching elements.
5. The circuit of claim 1, wherein the master storage element and the slave storage element are volatile.
6. The circuit of claim 5, wherein the master storage element and the slave storage element are constructed using volatile three-terminal nanotube switching elements.
7. The circuit of claim 1, wherein at least one of the master storage element or the slave storage element is constructed using a first nanotube switching element-based inverter and a second nanotube switching element-based inverter.
8. The circuit of claim 7, wherein the first nanotube switching element-based inverter and the second nanotube-switching element based inverter are cross-coupled.
9. The circuit of claim 1, wherein at least one of the first input buffer or the second input buffer includes a nanotube switching element.
10. The circuit of claim 9, wherein at least one of the first input buffer or the second input buffer is provided by a nanotube switch-based tri-stating inverter.
11. The circuit of claim 9, wherein at least one of the first input buffer or the second input buffer is provided by a single nanotube switching element.
12. The circuit of claim 1, further comprising an output driver circuit coupled between the slave storage element and the output, wherein the output driver circuit is constructed using nanotube switching elements.
13. A data storage circuit, comprising:
a first input for receiving a first input signal;
a second input for receiving a second input signal complementary to the first input signal;
a first inverter constructed using nanotube switching elements, the first inverter having a first control input and a first output; and a second inverter constructed using nanotube switching elements, the second inverter having a second control input and a second output; and wherein the first control input is coupled to the first input and wherein the second control input is coupled to the second input, wherein the first inverter stores a first data value and the second inverter stores a second data value.
a first input for receiving a first input signal;
a second input for receiving a second input signal complementary to the first input signal;
a first inverter constructed using nanotube switching elements, the first inverter having a first control input and a first output; and a second inverter constructed using nanotube switching elements, the second inverter having a second control input and a second output; and wherein the first control input is coupled to the first input and wherein the second control input is coupled to the second input, wherein the first inverter stores a first data value and the second inverter stores a second data value.
14. The data storage circuit of claim 13, wherein the first data value and the second data value correspond to a differential data value of a differential data signal coupled to the first input and the second input.
15. The data storage circuit of claim 13, wherein the first data value and the second data value are independent.
16. The data storage circuit of claim 13, wherein the first inverter and the second inverter are volatile.
17. The data storage circuit of claim 16, wherein the first inverter and the second inverter are cross-coupled.
18. The data storage circuit of claim 16, wherein the nanotube switching elements are three-terminal devices.
19. The data storage circuit of claim 13, wherein the first inverter and the second inverter are non-volatile.
20. The data storage circuit of claim 19, wherein the nanotube switching elements are four-terminal devices.
21. The data storage circuit of claim 20, wherein the first inverter includes a first release input and the second inverter includes a second release input, the first release input is coupled to the second input and the second release input is coupled to the first input.
22. A latch circuit, comprising:
a data input;
a clock input for providing a clock signal;
an input buffer coupled to the data input and the clock input for gating the data input under the control of the clock input;
a storage element coupled to the input buffer for storing a data value representative of the data input, wherein the storage element is constructed of at least one nanotube switching element; and a data output coupled to the storage element.
a data input;
a clock input for providing a clock signal;
an input buffer coupled to the data input and the clock input for gating the data input under the control of the clock input;
a storage element coupled to the input buffer for storing a data value representative of the data input, wherein the storage element is constructed of at least one nanotube switching element; and a data output coupled to the storage element.
23. The latch circuit of claim 22, wherein the storage element is volatile.
24. The latch circuit of claim 22, wherein the storage element is non-volatile.
25. The latch circuit of claim 22, wherein the storage element includes a single nanotube-switching element-based inverter.
26. A storage device, comprising:
a storage element constructed with at least one nanotube switching element having a control electrode and a release electrode; and an equilibration device responsive to a control signal that when activated maintains the control electrode and the release electrode at the same potential.
a storage element constructed with at least one nanotube switching element having a control electrode and a release electrode; and an equilibration device responsive to a control signal that when activated maintains the control electrode and the release electrode at the same potential.
27. The storage device of claim 26, wherein the equilibration device includes a MOS field effect switching element.
28. The storage device of claim 26, wherein the equilibration device includes a nanotube switching element.
29. The storage device of claim 26, wherein the storage element is non-volatile.
30. The storage device of claim 29, wherein the storage element is constructed with non-volatile four-terminal nanotube switching elements.
31. The storage device of claim 26, wherein the storage element is volatile.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58130104P | 2004-06-18 | 2004-06-18 | |
US60/581,301 | 2004-06-18 | ||
US11/032,983 | 2005-01-10 | ||
US11/032,983 US7161403B2 (en) | 2004-06-18 | 2005-01-10 | Storage elements using nanotube switching elements |
PCT/US2005/018537 WO2006033682A2 (en) | 2004-06-18 | 2005-05-26 | Storage elements using nanotube switching elements |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2570424A1 true CA2570424A1 (en) | 2006-03-30 |
CA2570424C CA2570424C (en) | 2011-11-22 |
Family
ID=35942231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2570424A Expired - Fee Related CA2570424C (en) | 2004-06-18 | 2005-05-26 | Storage elements using nanotube switching elements |
Country Status (3)
Country | Link |
---|---|
US (3) | US7161403B2 (en) |
CA (1) | CA2570424C (en) |
WO (1) | WO2006033682A2 (en) |
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2005
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- 2005-05-26 CA CA2570424A patent/CA2570424C/en not_active Expired - Fee Related
-
2007
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-
2008
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Also Published As
Publication number | Publication date |
---|---|
US7161403B2 (en) | 2007-01-09 |
US20090115482A1 (en) | 2009-05-07 |
US7759996B2 (en) | 2010-07-20 |
WO2006033682A3 (en) | 2006-12-07 |
US7405605B2 (en) | 2008-07-29 |
US20070210845A1 (en) | 2007-09-13 |
CA2570424C (en) | 2011-11-22 |
WO2006033682A2 (en) | 2006-03-30 |
US20060044035A1 (en) | 2006-03-02 |
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