CN100336217C - 树脂密封型半导体器件及其制造方法 - Google Patents

树脂密封型半导体器件及其制造方法 Download PDF

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Publication number
CN100336217C
CN100336217C CNB031557600A CN03155760A CN100336217C CN 100336217 C CN100336217 C CN 100336217C CN B031557600 A CNB031557600 A CN B031557600A CN 03155760 A CN03155760 A CN 03155760A CN 100336217 C CN100336217 C CN 100336217C
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mentioned
semiconductor chip
lead
resin
electrode
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CN1494142A (zh
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南尾匡纪
永田治人
西尾哲史
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Sony Corp
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Matsushita Electric Industrial Co Ltd
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract

本发明提供一种树脂密封型半导体器件，其具备：表面布置了电极组的半导体芯片、沿上述半导体芯片的周边排列的多个内引线、分别对上述半导体芯片的电极组和上述内引线进行连接的连接构件、对上述半导体芯片的表面和上述连接构件进行密封的密封树脂、及从上述密封树脂露出的外部电极。上述多个内引线从上述半导体芯片的周边的内侧跨过外侧延伸，在上述半导体芯片的周边的外方的表面上设有向厚度方向突出的突出部。作为上述连接部件，形成了上述半导体芯片的电极组的导电性凸起，与上述各内引线的上述突出部的内方的内侧部分的表面连接。上述外部电极形成在上述突出部的表面，其前端比上述半导体芯片的背面还突出。

Description

树脂密封型半导体器件及其制造方法
技术领域
本发明涉及使用引线框的树脂密封型半导体器件，特别涉及被称作SIP(封装级系统：System In Package)结构的薄型化、及使元件适合高速化的树脂密封型半导体器件、其制造方法及其所使用的引线框。
背景技术
一直以来，作为小型、薄型的树脂密封型半导体器件，开发了一种仅单面被密封树脂密封的被称作QFN(Quad Flat Non-leadedPackage)的树脂密封型半导体器件。以下，对有关现有的QFN型树脂密封型半导体器件进行说明。
首先，说明有关树脂密封型半导体器件所使用的引线框。图9是表示现有引线框的俯视图。该引线框具有通过吊线部4对配置在框部1的开口区2的大致中央部位上的管芯垫(die pad)进行支承的结构。吊线部4的一端与管芯垫3的各角部连接，另一端与框部1连接。另外，在框部1上形成多个内引线5，其前端与管芯垫3的各边相对配置。
接着，说明有关使用该引线框的现有树脂密封型半导体器件。图10A和图10B所示为现有的树脂密封型半导体器件。图10A是树脂密封型半导体器件的底面图，图10B是沿图10A的A-A1线的剖面图。半导体芯片6被粘接在管芯垫3上，引线框的框部1(参照图9)被切断，从而使内引线5相互分离。半导体芯片6的电极7和内引线5的表面由金属细线8电连接。使管芯垫3的底面和内引线5的底面露出，从而半导体芯片6的外围区域被密封树脂9密封。内引线5的底面和侧面分别从树脂密封型半导体器件的底面和侧面露出，以形成外部端子10。
接着，说明有关图10A和图10B所示的树脂密封型半导体器件的制造方法。图11A-图11E是通过与图10B一样沿图10A的A-A1线的剖面来表示相同制造方法的各工序的图。
首先，如图11A所示准备引线框。该引线框与图9所示的引线框相同，但省略了框部1(参照图9)的图示。示出了搭载半导体芯片的管芯垫3、及前端与管芯垫3的各边相对配列的多个内引线5。然后，如图11B所示，在引线框的管芯垫3上，粘接搭载半导体芯片6。然后，如图11C所示，半导体芯片6和内引线5的表面由金属细线8电连接。
然后，如图11D所示，将在包括内引线5的引线框的底面上粘附了片构件11的状态的结构体，收纳在密封模具12中。然后，通过向密封模具注入密封树脂并进行加热，将半导体芯片6的外围区树脂密封成使管芯垫3和内引线5的底面露出的状态。然后，如图11E所示，从密封膜具中取出树脂密封型半导体器件13。
但是，如上所述的现有树脂密封型半导体器件，由于其半导体芯片的电极和内引线由金属细线连接，所以整体的厚度变大而制约了薄型化。另外，在高速信号或高频信号工作的状况下，金属细线的信号损失成为问题，从而存在半导体芯片的功能不能充分发挥的问题。
另外，由于外部端子仅在树脂密封型半导体器件的底面露出，所以对多个树脂密封型半导体器件进行叠层也不能使外部端子相互电连接，存在三维安装实现困难的问题。
发明内容
本发明的目的在于提供一种使树脂密封型半导体器件更薄型化、且能降低信号损失的内引线与半导体芯片电极的连接结构。另外，本发明的目的在于提供一种叠层多个半导体器件时能相互电连接的连接结构。
本发明的一种引线框，具备框架、及从上述框架朝内侧延伸的多个内引线，在上述各内引线的外侧部分的表面设有向厚度方向突出的突出部。
本发明的树脂密封型半导体器件，具备：表面布置了电极组的半导体芯片、沿上述半导体芯片的周边排列的多个内引线、分别对上述半导体芯片的电极组和上述内引线进行连接的连接构件、对上述半导体芯片的表面和上述连接构件进行密封的密封树脂、及从上述密封树脂露出的外部电极，其特征在于，上述多个内引线从上述半导体芯片的周边的内侧跨过外侧延伸，在上述半导体芯片的周边的外方的表面上设有向厚度方向突出的突出部；作为上述连接部件，形成了上述半导体芯片的电极组的导电性凸起，与上述各内引线的上述突出部的内方的内侧部分的表面连接；上述外部电极形成在上述突出部的表面，其前端比上述半导体芯片的里面还突出。
在本发明的其他结构的树脂密封型半导体器件中，上述半导体芯片包括第1半导体芯片、及比上述第1半导体芯片还小且与上述第1半导体芯片的表面叠层的第2半导体芯片。上述第1半导体芯片具备配置在其外周部的第1电极组、及配置在其内侧的第2电极组。上述多个内引线从上述第1半导体芯片的周边的内侧跨过外侧延伸，在上述半导体芯片的周边的外方的表面上设有向厚度方向突出的突出部。作为上述连接部件，形成了上述第1半导体芯片的第1电极组的导电性凸起，与上述各内引线的上述突出部的内方的内侧部分的表面连接。上述第2半导体芯片布置在由上述多个内引线的内端围成的区域内，与上述第1半导体芯片的第2电极组通过导电性凸起被电连接。上述密封树脂对上述上述第1和第2半导体芯片的表面、及上述导电性凸起进行密封。上述外部电极形成在上述突出部的表面，其前端比上述半导体芯片的里面还突出。
本发明的树脂密封型半导体器件的制造方法，具备以下步骤。首先准备引线框，该引线框具备框架、及从上述框架朝内侧延伸的多个内引线，且在上述各内引线的外侧部分的表面设有向厚度方向突出的突出部。另外，准备半导体芯片，该半导体芯片？？？。在上述半导体芯片的电极组上形成导电性凸起；通过导电性凸起对上述内引线的突出部的内侧的内侧部分的表面和上述半导体芯片的电极进行电连接。然后，使上述框架和上述内引线的突出部露出，而通过密封树脂对包括上述半导体芯片的表面和上述导电性凸起的区域进行密封；从上述框架分离通过上述密封树脂进行密封的密封树脂体。接着，在上述突出部的表面上设置外部电极，以便其前端比上述半导体芯片的里面还突出。
本发明的其他结构的树脂密封型半导体器件的制造方法，是对2个半导体芯片进行叠层来搭载2个半导体芯片的方法，具备以下步骤。首先，准备引线框，该引线框具备框架、及从上述框架朝内侧延伸的多个内引线，且在上述各内引线的外侧部分的表面设有向厚度方向突出的突出部。另外，准备第1半导体芯片和第2半导体芯片，该第1半导体芯片具有配置在外周部的第1电极组和配置在内侧的第2电极组，该第2半导体芯片比上述第1半导体芯片还小。在上述第1半导体芯片的上述第1电极组上形成第1导电性凸起，在上述第2半导体芯片的电极组上形成第2导电性凸起。在上述第1半导体芯片的表面上叠层上述第2半导体芯片，而将上述第1半导体芯片的第2电极组和上述第2半导体芯片的第2导电性凸起电连接。使上述框架和上述内引线的突出部露出，以通过密封树脂对包括上述第1和第2半导体芯片的表面、及上述第1和第2导电性凸起的区域进行密封。从上述框架分离通过上述密封树脂进行密封的密封树脂体。在上述突出部的表面上形成外部电极，以便其前端比上述第1半导体芯片的里面还突出。
根据本发明的引线框和使用该引线框的树脂密封型半导体器件，引线框和半导体芯片的电极并不采用现有的金属细线，而是采用导电性凸起进行电连接的结构。由此，可以实现缩短连接距离的结构，所以树脂密封型半导体器件更加薄型化，另外，在高速信号或高频信号工作的环境下，能减少信号的损失。另外，在树脂密封型半导体器件的两面，露出内引线或外部电极的任意一个，所以易于使多个树脂密封型半导体器件叠层而相互电连接。根据本发明的树脂密封型半导体器件，可以效率地制造上述结构的树脂密封型半导体器件。
在本发明的引线框中，优选形成了上述突出部的部分上的上述各内引线的厚度实质上与上述框架的厚度相同。另外，优选上述各突出部的表面上粘附绝缘性带，并被上述绝缘性带支承。
在本发明的树脂密封型半导体器件中，优选上述内引线的里面与上述密封树脂的外表面大致在同一平面。另外，优选上述内引线的外端面与上述密封树脂的外表面大致在同一平面。另外，优选上述内引线的上述内侧部分，从内引线的背面朝其内端向上述突出部的突出侧倾斜。
在本发明的树脂密封型半导体器件的制造方法中，优选在进行上述密封之后，对上述第2半导体芯片的里面和上述内引线的里面同时进行研削。
附图说明
图1A是表示本发明实施例1的框架的俯视图，图1B是其剖面图。
图2A～图2D是表示本发明实施例1的树脂密封型半导体器件的图，图2A是俯视图，图2B是侧视图，图2C是里面图，图2D是剖面图。
图3是表示对多个同一树脂密封型半导体器件进行叠层了的安装体的剖面图。
图4A～图4F是表示相同树脂密封型半导体器件的制造方法的各工序的图，图4A是俯视图，图4B～图4F是剖面图。
图5A～图5D是表示本发明实施例2的树脂密封型半导体器件的图，图5A是俯视图，图5B是侧视图，图5C是里面图，图5D是剖面图。
图6是表示对多个同一树脂密封型半导体器件进行叠层了的安装体的剖面图。
图7A～图7F是表示相同树脂密封型半导体器件的制造方法的各工序的图，图7A是俯视图，图7B～图7F是剖面图。
图8A～图8G是表示本发明实施例3的树脂密封型半导体器件的制造方法的各工序的图，图8A是俯视图，图8B～图8G是剖面图。
图9是表示现有例的引线框的俯视图。
图10A是表示现有例的树脂密封型半导体器件的俯视图，图10B是其剖面图。
图11A～图11E是表示现有例的树脂密封型半导体器件的制造方法的各工序的图。
具体实施方式
以下，参照附图具体说明有关本发明实施例的引线框、使用该引线框的树脂密封型半导体器件及其制造方法的一实施例。
(实施例1)
首先，说明有关实施例1的引线框的结构。图1A是表示本实施例的引线框的俯视图，图1B是沿图1A的B-B1线的剖面图。
引线框14例如由150μm厚的铜材料或42-合金等构成。在框架15上，多个内引线16朝内侧延伸形成。在各内引线16上，在外侧部分形成突出部16a，在与内侧部分16b之间形成阶梯部17。突出部16a的内引线16的厚度实质上与框架15相同。引线框14的厚度优选设定在100～300μm的范围。另外，也可以是粘附绝缘性带15a而被支持在各内引线16的突出部16a的表面上的结构。
然后，对使用上述结构的引线框的本实施例的树脂密封型半导体器件的结构进行说明。图2A～图2D表示树脂密封型半导体器件，图2A是俯视图，图2B是侧视图，图2C是底面图，图2D是沿图2A的C-C1线的剖视图。
如图2D所示，在半导体芯片18的电极19上形成导电性凸起(bump)20。各内引线16的内侧部分16b朝半导体芯片18的周边的内方延伸，与导电性凸起20连接。各内引线16的突出部16a位于半导体芯片18的周边的外方。另外，包括导电性凸起20在内的半导体芯片18的表面区域被密封树脂21密封。也如图2C所示，至少突出部16a的表面从密封树脂21露出。另外，在突出部16a的表面上作为外部电极22设有焊料等形成的球形电极，也如图2B所示，外部电极22的前端从半导体芯片18的背面突出。
另外，在本实施例中，虽然没有图示，但也可以使内引线16的内侧部分16b从内引线的背面朝其内端稍微向突出部16a的突出侧倾斜。内引线16的背面、即搭载半导体芯片18的面的相反侧的面实质上与密封树脂21的外表面为同一平面。另外，如上述使内侧部分16b从内引线的背面朝其内端向突出部16a的突出侧倾斜的情况，其背面稍微形成凹部。另外，内引线16的外端面实质上与密封树脂21的外表面形成为同一平面。
图3所示是对具有上述结构的多个树脂密封型半导体器件23～26进行叠层后，使被叠层的上下的树脂密封型半导体器件相互电连接的状态的剖视图。例如，由外部电极22对下部的树脂密封型半导体器件25的内引线16的突出部16a的背面、与上部的树脂密封型半导体器件26的内引线16的突出部16a的表面进行连接。通过这样的结构，在叠层了多个树脂密封型半导体器件的情况下，可以容易地相互电连接，能实现多功能的安装体。
另外，在本实施例中，也可以在从密封树脂21露出的内引线16的露出部上，在与外部基板电连接所需要的区域以外的部分上形成绝缘性膜。
如以上所述，本实施例的树脂密封型半导体器件的结构是内引线16和形成在半导体芯片18的电极上的导电性凸起20直接电连接，所以能实现薄型的树脂密封型半导体器件。另外，与由金属细线对内引线16和半导体芯片18的电极进行连接的情况相比较，信号的损失被抑制，能充分发挥对高速信号或高频信号进行处理的半导体芯片18的功能。
另外，由于不仅在树脂密封型半导体器件的单面，而且在各个面上设置从密封树脂21露出的电极、即内引线16或外部电极22，所以通过叠层多个树脂密封型半导体器件，并连接相互的内引线16和外部电极22，可以实现树脂密封型半导体器件的三维安装。
然后，参照表示各工序的图4A～图4F说明有关本实施例的树脂密封型半导体器件的制造方法。图4A是引线框14的俯视图，图4B～图4F是沿图4A的D-D1线的剖视图。
首先，如图4A和图4B所示，准备由铜材料或42-合金等的金属板形成的引线框14。该引线框14与图1A、图1B所示的引线框相同，在框架15上多个内引线16朝内侧延伸。各内引线16具有突出部16a和内侧部分16b，并形成有阶梯部17。
然后，如图4C所示，在引线框14上放置半导体芯片18，在半导体芯片18的电极19上形成的导电性凸起20与内引线16的内侧部分16b电连接。
然后，如图4D所示，除框架15、内引线16的突出部16a及其背面之外，半导体芯片18的至少包括表面和带电性凸起20在内的区域由密封树脂21密封。密封例如可以通过从半导体芯片18的背面侧滴下密封树脂21进行涂敷来实施。
图4E将图4D的状态上下翻转来进行图示。如图4E所示，从半导体芯片18的背面侧通过进行使用旋转研削砂轮(图未示出)的所谓后研磨(back grinding)加工，研削密封树脂21直至半导体芯片18露出。还可以通过从其背面侧研削半导体芯片18，使树脂密封型半导体器件更薄。
然后，如图4F所示，将由密封树脂21密封的树脂密封体从框架15分离。进一步，在内引线16的突出部16a的表面上，作为外部电极22设置由焊料等形成的球形电极。此时，将外部电极22的尺寸设定成外部电极22的前端比半导体芯片18的背面突出。另外，切断与内引线16的框架15连接的那侧的末端部分，将各末端面调整成与密封树脂21的侧面大致为同一平面。
另外，在图4D的工序中，面对内引线16的突出部16a密合密封片(图未示出)进行树脂密封，由此可以抑制密封树脂21附着在突出部16a的表面。另外，通过使密封片咬入突出部16a的表面，而使突出部16a确实地从密封树脂面露出，所以可以确实地进行突出部16a的电连接。
根据本实施例的树脂密封型半导体器件的制造方法，可以使树脂密封型半导体器件的厚度变薄。具体而言可以容易地实现厚度不大于0.8mm的树脂密封型半导体器件。另外，在高速信号、高频信号工作的环境下，可以抑制信号的损失。还由于内引线16的背面和突出部16a的表面从密封树脂露出，所以能实现树脂密封型半导体器件的三维化。
(实施例2)
下面，参照图5A～图5D说明有关实施例2的树脂密封型半导体器件的第2结构。图5A所示是树脂密封型半导体器件的俯视图，图5B是侧视图，图5C是底面图，图5D是沿图5A的E-E1线的剖面图。另外，对与实施例1相同的构成要素附加同一符号，并省略其说明的重复。
在该树脂密封型半导体器件中，使用与实施例1一样的引线框。如图5D所示，在第1半导体芯片27的周边部配置的第1电极28上，形成第1导电性凸起29。各内引线16的内侧部分16b向第1半导体芯片27的周边的内侧延伸，第1导电性凸起29和内侧部分16b被连接。各内引线16的突出部16a设有由焊料等形成的球形电极，该球形电极配置在第1半导体芯片27的周边的外侧，作为外部电极22配置在突出部16a的表面。外部电极22的前端比第1半导体芯片27的背面突出。
在由多个内引线16的内端包围的区域内，配置尺寸比第1半导体芯片27小的第2半导体芯片31。在第1半导体芯片27的表面的第1电极28的内侧，形成与第2半导体芯片31相对的第2电极30。通过第2导电性凸起33对第1半导体芯片27的第2电极30和第2半导体芯片31的电极32进行电连接。通过密封树脂21以使内引线16的突出部16a的至少表面露出的方式对第1和第2半导体芯片27、311的表面、及第1和第2导电性导电性凸起29、33进行密封。
图6所示是对多个具有本实施例结构的树脂密封型半导体器件34～37进行叠层了的状态的剖面图。如上所述，与实施例1一样，下部的半导体器件35的突出部16a的背面和下部的半导体器件36的突出部16a的表面通过由球形电极构成的外部电极22连接。通过这样的结构，叠层了多个树脂密封型半导体器件的情况也可以相互电连接，可以实现多功能的安装体。
然后，参照表示各工序的图7A～图7F对本实施例的树脂密封型半导体器件的制造方法进行说明。图7A是引线框14的俯视图，图7B～图7F是沿图7A的F-F1线的剖视图。
首先，如图7A和图7B所示，准备铜材料或42-合金等金属板形成的引线框14。该引线框14与图1A、图1B所示的引线框一样。
另外，如图7C所示，制作将第1半导体芯片27和尺寸比第1半导体芯片27小的第2半导体芯片31电连接的COC(chip on chip)型半导体芯片连接体，此时，在形成于第1半导体芯片27上的第1电极28和第2电极30上，分别形成第1导电性凸起29和第2导电性凸起33。另外，通过第2导电性凸起33对接第1半导体芯片27的第2电极30和第2半导体芯片31的电极32进行连接。
然后，将上述半导体芯片连接体放置在引线框14上，对第1半导体芯片27的第1电极28和引线框16的内侧部分16b的表面进行电连接。此时，通过将内侧部分16b的厚度和第2半导体芯片31的厚度设定成相同，内引线框16的背面和第2半导体芯片31的背面形成为同一平面。
然后，如图7D所示，通过封装树脂21，对除框架15、内引线框16的突出部16a及其背面之外的、包括第1和第2半导体芯片27、31的表面、及第1和第2导电性凸起29、33在内的区域进行密封。
图7E所示为使图7D的状态上下翻转的状态。如图7E所示，从第1半导体芯片27的背面侧，通过使用旋转研削砂轮的所谓后研磨加工，研削密封树脂21直至第1半导体芯片27的背面露出。还通过从背面侧研削第1半导体芯片27，可以使树脂密封型半导体器件更薄。
接着，如图7F所示，使由密封树脂21密封的树脂密封体从框架15分离。再有，在引线框16的突出部16a的表面，作为外部电极22设置由焊锡等形成的球形电极。此时，以使外部电极22的前端比第1半导体芯片31的背面突出的方式，设定外部电极22的尺寸。然后，切断内引线16的末端部分，将各末端面调整成与密封树脂21的侧面大致为同一平面。
另外，在图7D的工序中，通过将密封片(图未示出)密合在与内引线16的突出部22相对的面上，可以抑制在突出部16a的表面上附着密封树脂21。而且，通过突出部16a的表面咬入密封片而使突出部16a确实从密封树脂面突出，所以可以确实进行突出部16a的电连接。
如上所述，采用本实施例的树脂密封型半导体器件的制造方法，可以容易地放置连接了2个半导体芯片的COC型连接体。能以高密度实现多功能树脂密封型半导体器件。
(实施例3)
参照示出各工序的图8A～图8G，对实施例3的树脂密封型半导体器件的制造方法进行说明，本实施例的树脂密封型半导体器件的制造方法稍许改变了实施例2的制造方法的工序。图8A是引线框14的俯视图，图8B～图8G是沿图8A的G-G1线的剖视图。
首先，如图8A和图8B所示，准备与实施例1一样的引线框14。然后，如图8C所示，在第1半导体芯片27的第1电极28上形成第1导电性凸起29，将第1导电凸起29和内引线16的内侧部分16b电连接。然后，如图8D所示，在第1半导体芯片27的第2电极30或第2半导体芯片31的电极32上形成第2导电性凸起33，经由第2导电性凸起33，对第1半导体芯片27的第2电极30和第2半导体芯片31的电极32进行电连接。
然后，如图8E所示，通过密封树脂21，对除框架15、引线框16的突出部16a及其背面之外的、包括第1和第2半导体芯片27、31的表面、及第1和第2导电性凸起29、33在内的区域进行密封。
图8F所示是从图8E的状态上下翻转的状态。如图8F所示，从第1半导体芯片27的背面侧，通过使用旋转研削砂轮的所谓后研磨加工，进行研磨直至第1半导体芯片27的背面露出。再有，通过从背面侧研削第1半导体芯片27，可以实现树脂密封型半导体器件的薄型化。另外，也可以同时对第2半导体芯片31的背面和内引线16的背面进行研削。
然后，如图8G所示，将由密封树脂21密封的树脂密封体从框架15分离。再有，在内引线16的突出部16a的表面上，作为外部电极22设置由焊锡等形成的球形电极。此时，以外部电极22的前端比第1半导体芯片27的背面突出的方式来设定外部电极22的尺寸。
本实施例的制造方法是先使第1半导体芯片27与内引线16连接，然后使第2半导体芯片31与第1半导体芯片27连接的方法。根据本实施例，可以与实施例2一样，容易地搭载将2个半导体芯片27连接成COC型的连接体，所以能以高密度实现多功能树脂密封型半导体器件。

Claims (10)

1.一种树脂密封型半导体器件，具备表面布置了电极的半导体芯片、多个内引线、对上述半导体芯片的电极和上述内引线进行倒装连接的导电性凸起、及对上述半导体芯片的至少表面和上述导电性凸起进行密封的密封树脂，上述内引线的一部分从上述密封树脂露出，其特征在于，
在上述多个内引线的比上述半导体芯片的周边靠外侧的表面，设有以不超越上述半导体芯片的背面的高度向厚度方向突出的突出部，
外部电极形成在上述突出部的表面。
2.如权利要求1所记载的树脂密封型半导体器件，其特征在于，上述内引线的背面与上述密封树脂的外表面大致在同一平面。
3.如权利要求2所记载的树脂密封型半导体器件，其特征在于，上述内引线的外端面与上述密封树脂的外表面大致在同一平面。
4.一种树脂密封型半导体器件，具备表面布置了电极的半导体芯片、多个内引线、对上述半导体芯片的电极和上述内引线进行倒装连接的导电性凸起、及对上述半导体芯片的至少表面和上述导电性凸起进行密封的密封树脂，上述内引线的一部分从上述密封树脂露出，其特征在于，
包括在表面配置了第1电极和第2电极的第1半导体芯片、及配置在由上述多个内引线的内端包围的区域内且比上述第1半导体芯片小的第2半导体芯片；
在上述多个内引线的比上述第1半导体芯片的周边靠外侧的表面，设有向厚度方向突出的突出部；
上述第1半导体芯片的上述第1电极和上述内引线通过第1的上述导电性凸起倒装连接；
上述第2半导体芯片的电极和上述第1半导体芯片的第2电极通过第2的上述导电性凸起倒装连接；
上述密封树脂对上述第1和第2半导体芯片的表面、及上述导电性凸起进行密封；
外部电极形成在上述突出部的表面。
5.如权利要求4所记载的树脂密封型半导体器件，其特征在于，上述密封树脂的外表面、上述内引线的背面和上述第2半导体芯片的背面大致在同一平面。
6.如权利要求5所记载的树脂密封型半导体器件，其特征在于，上述内引线的外端面与上述密封树脂的外表面大致在同一平面。
7.如权利要求1或4所记载的树脂密封型半导体器件，其特征在于，上述内引线的内侧部分，朝其内端向上述突出部的突出一侧倾斜。
8.一种树脂密封型半导体器件的制造方法，该树脂密封型半导体器件通过导电性凸起倒装连接被配置在半导体芯片的表面的电极和引线框的内引线、且通过密封树脂密封上述半导体芯片的至少表面和上述导电性凸起，并使上述内引线的一部分露出，其特征在于具备以下步骤，
使用如下引线框，该引线框在上述内引线的外侧部分的表面，设有将上述半导体芯片倒装连接在上述内引线上时高度不超越上述半导体芯片的背面且向厚度方向突出的突出部；
通过上述导电性凸起，倒装连接上述内引线的比突出部靠内侧部分的表面和上述半导体芯片的电极；
通过上述密封树脂对包括上述半导体芯片的至少表面和上述导电性凸起的区域进行密封；
在上述突出部的表面设置外部电极。
9.一种树脂密封型半导体器件的制造方法，该树脂密封型半导体器件通过导电性凸起倒装连接被配置在半导体芯片的表面的电极和引线框的内引线、且通过密封树脂密封上述半导体芯片的至少表面和上述导电性凸起，并使上述内引线的一部分露出，其特征在于具备以下步骤，
使用在上述内引线的外侧部分的表面设有向厚度方向突出的突出部的引线框；
经由第2导电性凸起，电连接形成在第1半导体芯片的表面的第2电极和形成在比上述第1半导体芯片小的第2半导体芯片的表面的电极；
在上述内引线的比上述突出部靠内侧部分的表面，经由第1导电性凸起电连接形成在上述第1半导体芯片的表面的第1电极和上述内引线；
使上述内引线的上述突出部露出，通过上述密封树脂对包括上述第1和第2半导体芯片的至少表面、及上述第1和第2导电性凸起的区域进行密封；
在上述突出部的表面设置外部电极。
10.如权利要求9所记载的树脂密封型半导体器件的制造方法，其特征在于，在进行上述密封之后，对上述第2半导体芯片的背面和上述内引线的背面同时进行研削。
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