CN100350637C - 具有量子阱和超晶格的基于ⅲ族氮化物的发光二极管结构 - Google Patents

具有量子阱和超晶格的基于ⅲ族氮化物的发光二极管结构 Download PDF

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CN100350637C
CN100350637C CNB028110897A CN02811089A CN100350637C CN 100350637 C CN100350637 C CN 100350637C CN B028110897 A CNB028110897 A CN B028110897A CN 02811089 A CN02811089 A CN 02811089A CN 100350637 C CN100350637 C CN 100350637C
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D·T·埃默森
J·伊贝特森
M·J·奥罗林
H·D·小诺尔比
A·C·阿巴雷
M·J·博格曼
K·M·多维斯皮克
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Abstract

提供一种发光二极管，它具有基于III族氮化物的超晶格和在超晶格上的基于III族氮化物的激活区。激活区具有至少一个量子阱结构。量子阱结构包括第一基于III族氮化物的阻挡层、在第一阻挡层上的基于III族氮化物的量子阱层以及第二基于III族氮化物的阻挡层。提供一种基于III族氮化物的半导体器件以及其激活区包括至少一个量子阱结构的基于III族氮化物的半导体器件的制造方法。量子阱结构包括：包含III族氮化物的阱支撑层；在阱支撑层之上的包含III族氮化物的量子阱层；以及在量子阱层之上的包含III族氮化物的覆盖层。还提供一种基于III族氮化物的半导体器件，它包括基于III族氮化物的超晶格，所述超晶格具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期，其中0≤X＜1，0≤Y＜1，且X不等于Y。所述半导体器件可以是具有基于III族氮化物的激活区的发光二极管。所述激活区可以是多量子阱激活区。

Description

具有量子阱和超晶格的基于Ⅲ族氮化物的发光二极管结构
与临时申请的交叉引用
本申请要求以下临时申请的权益和优先权：2001年5月30日提交的、序列号60/294,445、题目为“Multi-quantum Well LightEmitting Diode Structure”的临时申请；2001年5月30日提交的、序列号60/294,308、题目为“Light Emitting Diode Structure WithSuperlattice Structure”的临时申请；以及2001年5月30日提交、序列号60/294,378、题目为“Light Emitting Diode Structure WithMulti-quantum Well and Superlattice Structure”的临时申请，以上文件公开的内容已作为参考文献全部包括在本文内。
发明领域
本发明涉及微电子器件及其制造方法，更详细地说，涉及可用于III族氮化物半导体器件(例如发光二极管)的结构。
发明背景
发光二极管广泛使用于消费和商业应用中。本专业技术人员都知道，发光二极管通常包括在微电子衬底上的二极管区。微电子衬底可以包括，例如砷化镓、磷化镓、它们的合金、碳化硅和/或蓝宝石。LED的持续发展已产生了能覆盖可见光谱和可见光谱之外的高效和机械性能牢固的光源。这些属性，加上固体器件的潜在长工作寿命，就能开发各种新的显示应用，并能使LED处于与已牢固占有地位的白炽灯相互抗衡的地位。
制造基于III族氮化物的发光二极管，例如基于氮化镓的LED，的一个困难在于制造高质量的氮化镓。通常氮化镓LED是在蓝宝石或碳化硅的衬底上制造的。这种衬底可能导致衬底和氮化镓的晶格不匹配。已经采用了各种技术来克服氮化镓在蓝宝石和/或碳化硅上生长的潜在问题。例如，可以使用氮化铝(AlN)作为碳化硅衬底和III族激活层、特别是氮化镓激活层之间的过渡层。但通常氮化铝是绝缘的，而不是导电的。因此，有氮化铝过渡层的结构通常还需要短路触点将氮化铝过渡层旁路，而使导电的碳化硅衬底与III族氮化物激活层电连接。
还有一种方案是，导电的过渡层材料，例如氮化镓(GaN)、氮化镓铝(AlGaN)或氮化镓和氮化镓铝的组合，可以用来消除氮化铝过渡层通常所使用的短路触点。消除短路触点通常可以减小外延层厚度、减少生产器件所需的制造步骤、减小整个芯片尺寸和/或提高器件效率。这样，就可以用较低的成本生产具有较高性能的III族氮化物器件。不过，虽然这些导电过渡层提供了这些优点，但它们与碳化硅的晶格匹配却不如氮化铝那样令人满意。
在提供高质量氮化镓方面的上述困难可能导致器件的效率下降。改进基于III族氮化物的器件的输出的努力包括使器件的激活区具有不同的配置。这些努力包括，例如，使用单异质结激活区和/或双异质结激活区。类似地，也曾对具有一个或多个III族氮化物量子阱的器件作过说明。虽然这些努力改善了基于III族氮化物的器件的效率，但仍需要进一步的改进。
发明概述
本发明的实施例提供了一种具有基于III族氮化物的超晶格以及在所述超晶格上的基于III族氮化物的激活区的发光二极管。激活区具有至少一个量子阱结构。量子阱结构包括：第一基于III族氮化物的阻挡层；在第一阻挡层上的基于III族氮化物的量子阱层；以及在量子阱层上的第二基于III族氮化物的阻挡层。
在本发明另外的实施例中，发光二极管包括所述至少一个量子阱结构的从大约2次到大约10次的重复。
在本发明的其它实施例中，超晶格包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的基于氮化镓的超晶格，其中0≤X＜1，0≤Y＜1，且X不等于Y。第一基于III族氮化物的阻挡层提供包含III族氮化物的阱支撑层，而第二基于III族氮化物的阻挡层在量子阱层上提供包含III族氮化物的覆盖层。
在这类实施例中，覆盖层的晶体质量可以比阱支撑层差一些。
在本发明另外的实施例中，阱支撑层包括基于氮化镓的层，量子阱层包括氮化铟镓层，而阻挡层包括基于氮化镓的层。在这类实施例中，阱支撑层和覆盖层可以由InXGa1-XN层提供，其中0≤X＜1。而且，阱支撑层和覆盖层中铟的成分可以少于量子阱层中铟的成分。
阱支撑层和覆盖层也可以由AlXInYGa1-X-YN层提供，其中0＜X＜1，0≤Y＜1，且X+Y≤1。此外，阱支撑层和覆盖层可以不掺杂。或者，阱支撑层和覆盖层可以有小于大约5×1019cm-3的n型掺杂。覆盖层和阱支撑层也可以具有比量子阱层高的带隙。阱支撑层和覆盖层的组合厚度可从大约50_到大约400_。阱支撑层的厚度可以大于大约覆盖层的厚度。量子阱可以具有从大约10_到大约50_的厚度。例如，量子阱的厚度可为约20_。此外，在量子阱层中铟的百分比可从大约15％到大约40％。
在本发明的其它实施例中，在阱支撑层和超晶格之间设置了基于III族氮化物的隔离层，隔离层可以是未掺杂的GaN。
在本发明的其它实施例中，量子阱的带隙小于超晶格的带隙。
在本发明的其它实施例中，发光二极管包括：在覆盖层上的包含III族氮化物的第二阱支撑层；在第二阱支撑层上的包含III族氮化物的第二量子阱层；以及在第二量子阱层上的包含III族氮化物的第二覆盖层。
在本发明另外的实施例中，基于氮化镓的超晶格包括5个到50个周期。InXGa1-XN和InYGa1-YN的交替层的组合厚度为大约10_到大约140_。
在本发明的特殊实施例中，对于超晶格的InXGa1-XN层，X＝0。在这类实施例中，InGaN层的厚度为大约5_到大约40_，GaN层的厚度为大约5_到大约100_。
在本发明的其它实施例中，基于氮化镓的超晶格掺杂有从大约1×1017cm-3到大约5×1019cm-3掺杂级的n型杂质。基于氮化镓的超晶格的掺杂级可以是交替层中各层的实际掺杂级。所述掺杂级也可以是交替层中各层的平均掺杂级。这样，例如，发光二极管可以包括邻近超晶格的掺杂的III族氮化物层，其中III族氮化物层掺杂有n型杂质，为掺杂的III族氮化物层和超晶格提供从大约1×1017cm-3到大约5×1019cm-3的平均掺杂。超晶格的带隙可以是从大约2.95eV到大约3.35eV，在某些实施例中，可以是大约3.15eV。
在本发明的其它实施例中，提供了其激活区包含至少一个量子阱结构的基于III族氮化物的半导体器件。量子阱结构包括包含III族氮化物的阱支撑层，所述阱支撑层在其上的包含III族氮化物的量子阱层以及在所述量子阱层上的包含III族氮化物的覆盖层。
覆盖层的晶体质量可以比阱支撑层差一些。阱支撑层可以由基于氮化镓的层提供，量子阱层可以由氮化铟镓层提供，而阻挡层可以由基于氮化镓的层提供。在这类实施例中，阱支撑层和覆盖层可以由InXGa1-XN层提供，其中0≤X＜1。而且，阱支撑层和覆盖层中铟的成分可以少于量子阱层中铟的成分。同理，阱支撑层和覆盖层可以由AlXInYGa1-X-YN层提供，其中0＜X＜1，0≤Y＜1，且X+Y≤1。
此外，阱支撑层和覆盖层可以不掺杂。或者，阱支撑层和覆盖层可以具有小于5×1019cm-3的掺杂级。
在本发明的其它实施例中，覆盖层和阱支撑层具有比量子阱层高的带隙。阱支撑层和覆盖层的组合厚度可以是从大约50_到大约400_。例如，阱支撑层和覆盖层的组合厚度可以大于大约90_。同样，阱支撑层和覆盖层的组合厚度可为大约225_。阱支撑层的厚度可以大于覆盖层的厚度。
在本发明另外的实施例中，量子阱层的厚度为从大约10_到大约50_。例如，量子阱层可以具有大约25_的厚度。此外，量子阱层中铟的百分比可以是从大约5％到大约50％。
在根据本发明的基于III族氮化物的半导体器件的其它实施例中，提供了一种超晶格且所述阱支撑层处在超晶格之上。超晶格可以具有大约3.15eV的带隙。而且，可以在阱支撑层和超晶格之间设置基于III族氮化物的隔离层。隔离层可以是未掺杂的GaN。所述至少一个量子阱的带隙也可以小于超晶格的带隙。
在本发明的还有一些实施例中，在覆盖层上设置包含III族氮化物的第二阱支撑层。在第二阱支撑层上设置包III族氮化物的第二量子阱层，并在第二量子阱层上设置包III族氮化物的第二覆盖层。
在本发明的特殊实施例中，基于III族氮化物的半导体器件包括所述至少一个量子阱结构的大约2次到大约10次的重复。
本发明的实施例还提供一种基于III族氮化物的半导体器件，它包括基于氮化物的超晶格，所述超晶格具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期，其中0≤X＜1，0≤Y＜1，且X不等于Y。
在本发明的其它实施例中，基于氮化镓的超晶格包括从大约5个周期到大约50个周期。例如，基于氮化镓的超晶格可以包括25个周期。同理，基于氮化镓的超晶格可以包括10个周期。
在本发明的另一些实施例中，基于氮化镓的超晶格包括从大约5个周期到大约50个周期。InXGa1-XN和InYGa1-YN的交替层的组合厚度可以从大约10_到大约140_。
在本发明的特殊实施例中，对于超晶格的InXGa1-XN层，X＝0。在这类实施例中，InGaN层的厚度可以是从大约5_到大约40_，而GaN层的厚度可以是从大约5_到大约100_。在本发明的另一些实施例中，基于氮化镓的超晶格掺杂有从大约1×1017cm-3到大约5×1019cm-3的掺杂级的n型杂质。基于氮化镓的超晶格的掺杂级可以是交替层中各层的实际掺杂级或交替层中各层的平均掺杂级。
在本发明的某些实施例中，邻近所述超晶格形成掺杂的III族氮化物层。掺杂的III族氮化物层掺杂有n型杂质，以便为掺杂的III族氮化物层和超晶格提供从大约1×1017cm-3到大约5×1019cm-3的平均掺杂。
在本发明另外的实施例中，超晶格的带隙为大约3.15eV。
在本发明的其中基于III族氮化物的半导体器件包括发光二极管的实施例中，发光二极管包括在超晶格上的基于III族氮化物的激活区。此外，可以在激活区和超晶格之间形成基于III族氮化物的隔离层。此隔离层可以是未掺杂的GaN。
在本发明的某些实施例中，激活区包括至少一个量子阱。在这类实施例中，量子阱的带隙可以小于超晶格的带隙。
本发明另外的实施例提供其激活区包含至少一个量子阱结构的基于III族氮化物的半导体器件的制造方法。通过以下步骤制造所述量子阱结构：形成包含III族氮化物的阱支撑层；在阱支撑层上形成包含III族氮化物的量子阱层；以及在量子阱层上形成包含III族氮化物的覆盖层。
在本发明的特殊实施例中，通过在第一温度下形成阱支撑层来形成包含III族氮化物的阱支撑层。通过在低于第一温度的第二温度下形成量子阱来形成所述量子阱层。通过在低于第一温度的第三温度下形成覆盖层来形成所述覆盖层。在本发明的某些实施例中，第三温度基本上与第二温度相同。
在本发明的另一些实施例中，阱支撑层包括基于氮化镓的层，量子阱层包括氮化铟镓层，而覆盖层包括基于氮化镓的层。在这类实施例中，第一温度可以是从大约700℃到大约900℃。此外，第二温度可以比第一温度低大约0℃到大约200℃。氮化铟镓层可以在氮气气氛或其它气氛中形成。
最好通过形成InXGa1-XN覆盖层、其中0≤X＜1以及形成InXGa1-XN阱支撑层、其中0≤X＜1，的方法来形成阱支撑层和形成覆盖层。而且，阱支撑层和覆盖层中的铟成分可以少于量子阱层中的铟成分。
在本发明的另外的实施例中，通过形成AlXInYGa1-X-YN的覆盖层、其中0＜X＜1、0≤Y＜1、且X+Y≤1以及形成AlXInYGa1-X-YN的阱支撑层、其中0＜X＜1、0≤Y＜1、且X+Y≤1的方法来形成阱支撑层和形成覆盖层。
本发明的另一些实施例包括形成超晶格，其中所述阱支撑层在所述超晶格之上。本发明另外的实施例包括在阱支撑层和超晶格之间形成基于III族氮化物的隔离层。所述隔离层可以是未掺杂的GaN。本发明另外的实施例包括：在覆盖层上形成包含III族氮化物的第二阱支撑层；在第二阱支撑层上形成包含III族氮化物的第二量子阱层；以及在第二量子阱层上形成包含III族氮化物的第二覆盖层。在这类实施例中，第二阱支撑层可以大体上在第一温度下形成，第二量子阱层可以大体上在低于第一温度的第二温度下形成，而第二覆盖层可以大体上在低于第一温度的第三温度下形成。
附图的简要说明
结合附图阅读以下对具体实施例的详细说明，可以更容易地理解本发明的其它特征。
图1是包含本发明实施例的III族氮化物发光二极管的示意图；
图2是包含本发明另一些实施例的III族氮化物发光二极管的示意图；以及
图3是根据本发明另一些实施例的量子阱结构和多量子阱结构的示意图。
最佳实施例的详细说明
以下参考示出本发明最佳实施例的附图更全面地说明本发明。但本发明可以用许多不同形式体现，不应认为仅限于此文提出的实施例。提供这些实施例是为了使所公开的内容更彻底和完整，并向本专业的技术人员充分传达本发明的范围。在附图中，为了清晰起见，层和区的厚度都放大了。在所有的图中，相同的标号表示相同的元件。应理解，当提到一个元件(例如一层，区或衬底)是在另一元件“上”或延伸到另一元件“上”，它可以是直接在另一元件“上”或直接延伸到另一元件“上”，或者也可有插入元件存在。相反，当提到一个元件直接在另一元件“上”或直接延伸到另一元件“上”，就没有插入元件存在。此外，此处说明和示出的实施例也包括其互补导电型实施例。
下面将参考图1说明本发明的实施例，图中示出发光二极管(LED)结构40。图1的LED结构40包括衬底10，衬底10最好是4H或6H的n型碳化硅。衬底也可以包括蓝宝石，体氮化镓或其它合适的衬底。图1的LED结构40中还包括衬底10上的包含各基于氮化镓半导体层的分层半导体结构。也就是说，所示LED结构40包括以下各层：导电过渡层11；第一掺硅GaN层12；第二掺硅GaN层14；包括掺硅GaN和/或InGaN交替层的超晶格结构16；激活区18(可以由多量子阱结构形成)；未掺杂的GaN和/或InGaN层22；掺有p型杂质的AlGaN层30；以及也掺有p型杂质的GaN接触层32。所述结构还包括在衬底10上的n型欧姆触点23和在接触层24上的p型欧姆触点24。
过渡层11最好是n型AlGaN。在转让给本发明的受让人的美国专利5393993和5523589中以及题目为“Vertical Geometry InGaNLight Emitting Diode”的序列号09/154363的美国专利申请中提供了碳化硅和III族氮化物材料之间的过渡层的实例，这些专利的公开内容已作为参考全部包括在本文中。同样，本发明的实施例也包括例如在题目为“Group III Nitride Photonic Devices onSilicon Carbide Substrats with Conductive Buffer InterlayStructure”的美国专利No.6201262中所说明的那些结构，所述专利的公开内容已作为参考全部包括在本文中。
GaN层12的厚度最好在大约500nm到4000nm之间、包括大约500nm和4000nm在内、最好是大约1500nm厚。GaN层12可以掺杂有大约5×1017到5×1018cm-3的掺杂级的硅。GaN层14的厚度最好在大约10_到500_之间、包括大约10_和500_在内、最好是大约80_。GaN层14可以掺杂有低于大约5×1019cm-3的掺杂级的硅。
如图1所示，根据本发明实施例的超晶格结构16包括InXGa1-XN和InYGa1-YN的交替层，其中X为0到1之间(包括0和1)，且X不等于Y。最好，X＝0且InGaN交替的各层中每一层的厚度是大约5-40_、包括5_和40_在内，而GaN的交替的各层中每一层的厚度为大约5-100_、包括5_和100_在内。在某些实施例中，各GaN层是大约30_厚，而各InGaN层是大约15_厚。超晶格结构16可以包括从大约5个周期到50个周期(其中，一个周期等于包含超晶格结构的InXGa1-XN和InYGa1-YN层各重复一次)。在一个实施例中，超晶格结构16包括25个周期。在另一实施例中，超晶格结构16包括10个周期。但是，例如可以通过增加各个层的厚度来减少周期个数。因此，例如，可以使用加倍的层厚，同时将周期个数减少到原来的一半。或者，周期的个数和厚度也可以彼此无关。
超晶格16最好掺杂有大约5×1017cm-3到大约5×1019cm-3的掺杂级的n型杂质，例如硅。这样的掺杂级可以是超晶格16的各层的实际掺杂级或平均掺杂级。如果这种掺杂级是平均掺杂级，则最好将提供所需平均掺杂的掺杂层设置在邻近超晶格结构16处，以便在所述各邻近层和超晶格结构16上对各邻近层的掺杂求平均。通过将超晶格16设置在衬底10和激活区18之间，可以提供一个较好的表面以便在所述表面上生长基于InGaN的激活区18。虽然不希望局限于任何工作理论，但是，发明人认为，超晶格结构16中的应变效应提供了有助于高质量含InGaN激活区生长的生长表面。而且，已知超晶格会影响器件的工作电压。适当选择超晶格的厚度和成分参数可降低工作电压和提高光学效率。
超晶格结构16可以在氮气或其它能在结构中生长高质量的InGaN层的气体环境中生长。通过在氮气环境中在掺杂硅的InGaN层上生长掺杂硅的InGaN/GaN超晶格，可以实现具有最佳应变的改进了结晶度和导电率的结构。
在本发明的某些实施例中，激活区18可以包括单个或多个量子阱结构以及单异质结或双异质结激活区。在本发明的特殊实施例中，激活区18包括多个量子阱结构，所述量子阱结构包含由阻挡层分隔的多个InGaN量子阱层(图1未示出)。
在激活区18上形成层22，并且层22最好是未掺杂的GaN或InGaN，其厚度在大约0_到120_之间、包括0_和120_。在此，未掺杂是指不进行有意的掺杂。层22的厚度最好是大约35_。如果层22包括AIGaN，则在所述层中铝的百分比最好是大约10-30％，顶好是大约24％。层22中铝的含量也可以以阶式地或连续地减少的方式渐变。可以在比量子阱区25的生长温度高的温度下生长层22，以改善层22的晶体质量。在层22附近可以包括有未掺杂的GaN或InGaN附加层。例如，LED1可以包括在激活区18和层22之间的大约6-9_厚的未掺杂的AIGaN附加层。
在层22上形成掺杂有p型杂质、例如镁的AIGaN层30。AIGaN层30的厚度可以在大约0到300_之间、包括0和300_，并且最好是130_。在层30上形成p型GaN的接触层32，接触层32的厚度最好是大约1800_。分别在p-GaN接触层32上和衬底10上形成欧姆触点24和25。
图2图解说明包含多量子阱激活区的本发明另外的实施例。图2示出的本发明的实施例包括分层半导体器件100，它包括在衬底10上生长的基于氮化镓的半导体层。如上所述，衬底10可以是SiC，或体氮化镓。如图2所示，根据本发明的特定实施例的LED可以包括：导电过渡层11；第一掺硅GaN层12；第二掺硅GaN层14；包含掺硅GaN和/或InGaN的交替层的超晶格结构16；包含多量子阱结构的激活区125；未掺杂GaN或InGaN层22；掺有p型杂质的AlGaN层30；以及也掺有p型杂质的GaN接触层32。LED还可以包括衬底10上的n型欧姆触点23和接触层32上的p型欧姆触点24。在衬底是蓝宝石的本发明实施例中，在n型GaN层12上和/或n型GaN层14上形成n型欧姆触点23。
如上参考图1所描述的，过渡层11最好是n型AlGaN。同样，GaN层12的厚度最好在500nm到4000nm之间、包括500nm和4000nm在内、顶好是大约1500nm。GaN层12可以掺杂有大约5×1017到5×1018cm-3的掺杂级的硅。GaN层14的厚度最好在大约10_到500_之间、包括10和500_在内、顶好是大约80_。GaN层14可以掺杂有大约5×1019cm-3的掺杂级的硅。也可以如以上参考图1所述的那样形成超晶格结构16。
激活区125包括多量子阱结构120，所述多量子阱结构包括多个由阻挡层118分隔开的InGaN量子阱层120。阻挡层118包括AlXGa1-XN，式中0≤X＜1。阻挡层118的铟成分最好少于量子阱层120的铟成分，以便使阻挡层118具有比量子阱层120高的带隙。阻挡层118和量子阱层120可以不掺杂(即不有意地用诸如硅或镁的杂质原子掺杂)。但是，阻挡层118也可能需要掺杂少于5×1019cm-3掺杂级的硅，特别是在需要紫外发射的情况下。
在本发明的其它实施例中，阻挡层118包含AlXInYGa1-X-YN，其中0＜X＜1，0≤Y＜1，且X+Y≤1。通过将铝包括在阻挡层118的晶体中，可以使阻挡层118的晶格与量子阱层120的晶格匹配，从而提供量子阱层120中改进的结晶质量，增加器件的发光效率。
参阅图3，图中示出提供基于氮化镓的器件的多量子阱结构的本发明的实施例。图3所示的多量子阱结构可以形成图1和/或图2所示的LED的激活区。由图3可知，激活区225包括周期性重复的结构221，结构221包括：具有高晶体质量的阱支撑层218a；量子阱层220；以及作为量子阱层220的保护覆盖层的覆盖层218b。当生长结构221时，覆盖层218b和阱支撑层218a一起在相邻的量子阱220之间形成阻挡层。高质量阱支撑层218a的生长温度最好高于用于生长InGaN量子阱层220的温度。在本发明的某些实施例中，阱支撑层218a的生长速率比覆盖层218b要慢一些。在其它实施例中，在低温生长过程中使用较低的生长速率，而在较高温度的生长过程中使用较高的生长速率。例如，为了得到高质量的表面来生长InGaN量子阱层220，阱支撑层218b可以在大约700℃和900℃之间的生长温度下生长。然后，将生长室的温度降低大约0℃到大约200℃，以便可以生长高质量的InGaN量子阱层220。然后，在温度保持在较低的InGaN生长温度时，生长覆盖层218b。这样，可以制造出包含高质量InGaN层的多量子阱区。
图2和图3的激活区125和225最好在氮气气氛中生长，这样可以提供更高的InGaN结晶质量。阻挡层118、阱支撑层218a和/或覆盖层218b的厚度可以在50_到400_之间，包括50_和400_。相应的阱支撑层218a和覆盖层218b的组合厚度在50_到400_之间，包括50_和400_。阻挡层118、阱支撑层218a和/或覆盖层218b的厚度最好都大于90_、顶好都大于225_。而且，最好阱支撑层218a比覆盖层218b厚一些。因此，最好在仍能减少铟从量子阱层220中的解吸作用或减少量子阱层220的退化的同时，使覆盖层218b尽可能地薄。量子阱层120和220的厚度可以在10_到450_之间，包括10_和50_。量子阱层120和220的厚度最好大于20_，顶好是25_。量子阱层120和220的厚度和铟的百分比可以各不相同，以产生所需的波长的光。通常，量子阱层120和220中铟的百分比大约为25-30％，但根据所需的波长，铟的百分比可以在5％到50％之间变化。
在本发明的最佳实施例中，超晶格结构16的带隙超过量子阱层120的带隙。调节超晶格16中铟的平均百分比就可做到这一点。应当这样选择超晶格层的厚度(或周期)以及层中铟的平均百分比、使得超晶格结构16的带隙大于量子阱层120的带隙。保持超晶格结构16的带隙大于量子阱层120的带隙，可以把器件中不希望有的吸收减到最小而把光发射增至最大。超晶格结构16的带隙可从大约2.95eV到3.35eV。在最佳实施例中，超晶格结构16的带隙为大约3.15eV。
在本发明另外的实施例中，图2所示的LED结构包括设置在超晶格16和激活区125之间的隔离层17。隔离层17最好包括未掺杂的GaN。在掺杂的超晶格16和激活区125之间存在任选的隔离层17，可以阻止硅杂质进入激活区125。这样又改进了激活区125的材料质量，从而提供更一致的器件性能以及更好的均匀度。同理，在图1所示的LED结构中，也可以在超晶格16和激活区18之间设置隔离层。
回到图2，可以在激活区125上形成层22，层22最好是未掺杂的GaN或AlGaN、厚度在大约0到120_之间、包括0和120_。层22的厚度最好是大约35_厚。如果层22包含AlGaN，则在所述层中铝的百分比最好大约为10-30％，顶好是大约24％。层22中铝的含量也可以以阶式地或连续地减少的方式渐变。可以在比量子阱区25的生长温度高的温度下生长层22，以便改善层22的晶体质量。在层22附近可以包括未掺杂的GaN或AlGaN附加层。例如，图2所示的LED可以在激活区125和层22之间包括一个大约6-9_厚的未掺杂AlGaN附加层。
在层22上形成掺杂有p型杂质，例如镁的AlGaN层30。AlGaN层30的厚度可以从大约0到300_、包括0和300_，最好是130_。在层30上形成p型GaN的接触层32，其厚度最好为大约1800_。在p-GaN接触层32上和衬底10上分别形成欧姆触点24和25。
虽然本发明的实施例均以多量子阱加以说明，但本发明内容的优点在单量子阱结构中也可实现。例如，可以形成这样的发光二极管，其中图3的作为器件的激活区的结构221仅出现一次。因此，根据本发明的实施例可使用不同数量的量子阱，量子阱的数量通常在1到10的范围内。
虽然本发明的实施例是结合基于氮化镓的器件加以说明的，但本发明的内容和优点也可以由其它III族氮化物类提供。所以，本发明提供基于III族氮化物的超晶格结构、量子阱结构和/或具有超晶格和/或量子阱的基于III族氮化物的发光二极管。
在附图和说明书中，公开了本发明的典型最佳实施例，虽然使用了具体术语，但这些术语的使用仅仅是通用的和说明性的，而不是为了起限制作用，本发明的范围在以下权利要求中阐述。

Claims (54)

1.一种基于III族氮化物的半导体器件，它具有包括多量子阱结构的激活区，所述多量子阱结构包括：
包含III族氮化物的第一阱支撑层；
在所述第一阱支撑层上的包含III族氮化物的第一量子阱层；
在所述量子阱层上的包含III族氮化物的第一覆盖层；
在所述第一覆盖层上的包含III族氮化物的第二阱支撑层；
在所述第二阱支撑层上的包含III族氮化物的第二量子阱层；以及
在所述第二量子阱层上的包含III族氮化物的第二覆盖层；
其中，所述第一覆盖层的晶体质量比所述第二阱支撑层差。
2.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层包括基于氮化镓的层，所述量子阱层包括氮化铟镓层，而所述阻挡层包括基于氮化镓的层。
3.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层包括InXGa1-XN层，其中0≤X＜1。
4.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层中铟的成分少于所述量子阱层中铟的成分。
5.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层包括AlXInYGa1-X-YN层，其中0＜X＜1，0≤Y＜1，且X+Y≤1。
6.如权利要求5所述的基于III族氮化物的半导体器件，其特征在于：X≤Y+0.05。
7.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层都未掺杂。
8.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层具有小于5×1019cm-3的掺杂级。
9.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述覆盖层和所述阱支撑层具有比所述量子阱层高的带隙。
10.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层的组合厚度为50_到400_。
11.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层的组合厚度大于90_。
12.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层和所述覆盖层的组合厚度为225_。
13.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于：所述阱支撑层的厚度大于所述覆盖层的厚度。
14.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述量子阱层的厚度为10_到50_。
15.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述量子阱层具有25_的厚度。
16.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于：所述量子阱层中铟的百分比为5％到50％。
17.如权利要求2所述的基于III族氮化物的半导体器件，其特征在于还包括超晶格，并且所述阱支撑层在所述超晶格之上。
18.如权利要求17所述的基于III族氮化物的半导体器件，其特征在于：所述超晶格的带隙为2.95eV到3.35eV。
19.如权利要求17所述的基于III族氮化物的半导体器件，其特征在于：所述超晶格的带隙为3.15eV。
20.如权利要求17所述的基于III族氮化物的半导体器件，其特征在于还包括在所述阱支撑层和所述超晶格之间的基于III族氮化物的隔离层。
21.如权利要求20所述的基于III族氮化物的半导体器件，其特征在于：所述隔离层包括未掺杂的GaN。
22.如权利要求17所述的基于III族氮化物的半导体器件，其特征在于：所述至少一个量子阱的带隙小于所述超晶格的带隙。
23.如权利要求1所述的基于III族氮化物的半导体器件，其特征在于具有所述至少一个量子阱结构的从2次到10次的重复。
24.一种制造基于III族氮化物的半导体器件的方法，所述基于III族氮化物的半导体器件具有包括至少一个量子阱结构的激活区，所述方法包括：
在第一温度下形成包含III族氮化物的阱支撑层；
在低于所述第一温度的第二温度下、在所述量子阱支撑层上形成包含III族氮化物的量子阱层；以及
在低于所述第一温度的第三温度下、在所述量子阱层上形成包含III族氮化物的覆盖层。
25.如权利要求24所述的方法，其特征在于：所述第三温度与所述第二温度相同。
26.如权利要求25所述的方法，其特征在于：所述阱支撑层包括基于氮化镓的层，所述量子阱层包括氮化铟镓层，而所述覆盖层包括基于氮化镓的层。
27.如权利要求26所述的方法，其特征在于：所述第一温度为700℃到900℃。
28.如权利要求26所述的方法，其特征在于：所述第二温度比所述第一温度低0℃到200℃。
29.如权利要求26所述的方法，其特征在于：所述第二温度低于所述第一温度。
30.如权利要求26所述的方法，其特征在于：所述氮化铟镓层是在氮气气氛中形成的。
31.如权利要求26所述的方法，其特征在于：形成所述阱支撑层和形成所述覆盖层的所述步骤包括形成InXGa1-XN覆盖层、其中0≤X＜1以及形成InXGa1-XN阱支撑层，其中0≤X＜1。
32.如权利要求31所述的方法，其特征在于：所述阱支撑层和所述覆盖层中的铟成分少于所述量子阱层中的铟成分。
33.如权利要求26所述的方法，其特征在于：形成阱支撑层和形成覆盖层的所述步骤包括形成AlXInYGa1-X-YN覆盖层、式中0＜X＜1、0≤Y＜1且X+Y≤1以及形成AlXInYGa1-X-YN阱支撑层、式中0＜X＜1、0≤Y＜1且X+Y≤1。
34.如权利要求22所述的方法，其特征在于：X≤Y+0.05。
35.如权利要求26所述的方法，其特征在于：所述阱支撑层和所述覆盖层都是未掺杂的。
36.如权利要求22所述的方法，其特征在于：所述阱支撑层和所述覆盖层具有小于5×1019cm-3的掺杂级。
37.如权利要求24所述的方法，其特征在于：所述覆盖层和所述阱支撑层具有高于所述量子阱层的带隙。
38.如权利要求26所述的方法，其特征在于：所述阱支撑层和所述覆盖层的组合厚度为50_到400_。
39.如权利要求26所述的方法，其特征在于：所述阱支撑层的厚度大于所述覆盖层的厚度。
40.如权利要求26所述的方法，其特征在于：所述阱支撑层的厚度为10_到50_。
41.如权利要求26所述的方法，其特征在于：所述量子阱层中铟的百分比为5％到50％。
42.如权利要求26所述的方法，其特征在于还包括形成超晶格的步骤，其中所述阱支撑层在所述超晶格之上。
43.如权利要求42所述的方法，其特征在于还包括在所述阱支撑层和所述超晶格之间形成基于III族氮化物的隔离层的步骤。
44.如权利要求43所述的方法，其特征在于：所述隔离层包括未掺杂的GaN.
45.如权利要求42所述的方法，其特征在于：所述量子阱层的带隙小于所述超晶格的带隙。
46.如权利要求24所述的方法，其特征在于还包括：
在所述覆盖层上形成包含III族氮化物的第二阱支撑层；
在所述第二阱支撑层上形成包含III族氮化物的第二量子阱层；以及
在所述第二量子阱层上形成包含III族氮化物的第二覆盖层。
47.如权利要求46所述的方法，其特征在于：形成包含III族氮化物的第二阱支撑层的所述步骤包括大体上在所述第一温度下形成所述第二阱支撑层；
形成第二量子阱层的所述步骤包括大体上在低于所述第一温度的所述第二温度下形成所述第二量子阱层；以及
形成第二覆盖层的所述步骤包括大体上在低于所述第一温度的第三温度下形成所述第二覆盖层。
48.如权利要求47所述的方法，其特征在于：所述第三温度与所述第二温度相同。
49.如权利要求48所述的方法，其特征在于还包括2次到10次地重复形成所述至少一个量子阱结构。
50.如权利要求38所述的基于III族氮化物的半导体器件，其特征在于：所述超晶格的带隙为3.15eV。
51.如权利要求38所述的基于III族氮化物的半导体器件，其特征在于：所述超晶格的带隙为2.95eV到3.15eV。
52.如权利要求38所述的基于III族氮化物的半导体器件，其特征在于：所述半导体器件包括发光二极管，所述发光二极管还包括在所述超晶格上的基于III族氮化物的激活区。
53.如权利要求52所述的基于III族氮化物的半导体器件，其特征在于还包括在所述激活区和所述超晶格之间的基于III族氮化物的隔离层。
54.如权利要求53所述的基于III族氮化物的半导体器件，其特征在于：所述隔离层包括未掺杂的GaN。
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