CN100352050C - 带多行焊接焊盘的半导体芯片 - Google Patents

带多行焊接焊盘的半导体芯片 Download PDF

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Publication number
CN100352050C
CN100352050C CNB028191412A CN02819141A CN100352050C CN 100352050 C CN100352050 C CN 100352050C CN B028191412 A CNB028191412 A CN B028191412A CN 02819141 A CN02819141 A CN 02819141A CN 100352050 C CN100352050 C CN 100352050C
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solder pad
welding
tube core
row
wire
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CN1561545A (zh
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肖恩·M·奥康纳
马克·艾伦·格伯
让·德西雷·米勒
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

一种半导体管芯(12)，具有至少三行(16、18、20)带最小间隔的焊接焊盘。在具有至少三行焊接指(26、28)和/或导电环(22、24)的封装基板(14)上安装管芯(12)。通过由换向自动点焊获得的相对较低高度引线(42)把在管芯最外部分(最接近管芯周边)上的焊接焊盘(16)连接到焊接指的最内环或行(24)(距封装基板的周边最远)。通过由焊球焊接至楔形焊接获得的相对较高高度引线(86)把最内行焊接焊盘(20)连接到最外行焊接指(26)。通过由焊球焊接至楔形焊接获得的相对居中高度引线(88)把中间行焊接焊盘(18)连接到中间行焊接指(28)。变化高度的引线可供紧密组合的焊接焊盘之用。该结构适用于层叠管芯。

Description

带多行焊接焊盘的半导体芯片
技术领域
本申请涉及封装半导体，尤其涉及带管芯的封装半导体，该管芯具有与管芯载体相结合的多行焊接焊盘。
背景技术
随着由于半导体制造技术改进引起的半导体几何尺寸的不断缩小，管芯尺寸自身常常变得更小。随着这些管芯尺寸变得更小，集成电路的复杂程度不但没有减小，反而还要增加。由此，集成电路所需的引脚数不是必须改变，但如果功能实际增加，那么引脚数或许也要增加。由此，对于给定的功能，管芯尺寸变得更小，或者作为替代，对于给定管芯尺寸，功能及由此的引脚伸出数变多。在任一种情况下，存在有效实现所有引脚伸出至集成电路用户的困难。需要许多引脚伸出常用于复杂集成电路的封装技术，称为球栅阵列(BGA)。实际上对给定尺寸的集成电路存在焊盘限制。如果焊盘(引脚伸出)数超出对给定管芯尺寸的限制，认为集成电路是焊盘限制的。
这么做的一种方法是用引线焊接到封装基板的顶表面，在底表面上带焊球，并且在顶表面上有集成电路，引线焊接到顶表面。通孔从顶表面延伸到底表面，接着迹线从通孔延伸到底部上的焊球并从焊接指延伸到顶表面上的通孔。希望封装基板尽可能得小，还希望集成电路也尽可能得小。为了通过焊接指在集成电路和顶表面之间实现所需的连接，在从集成电路管芯延伸到焊接指的引线之间必须存在足够的空间。一种使所有互连的制造技术就是把焊接焊盘交错排列成两行。这在引线之间提供了更多的空间，但是，即使交错排列的引线能够间隔开，如何紧密地间隔开仍然存在限制。而且交错排列需要焊接焊盘比基于制造能力获得的最小距离更远地隔开。由此，由于交错排列，焊接焊盘所需的空间比可供焊接焊盘之用的最小空间要大。试图增加提供所需引脚伸出能力的某些技术包括在衬底上使用空腔技术以使焊接指处于不同级上。这实质上增加了衬底的成本。而且，尽管如此，还是不能提供多于两行。
由此需要以如下方式在集成电路和封装基板上的焊接指之间提供引线的能力：不要求焊接间隔比所需最小间隔大，并能够提供充足的所需引脚数量，而不必仅为了能够实现所需引线焊接增加管芯的尺寸。
附图说明
通过附图中的实例说明本发明，而非限制本发明，其中相同的参考标号代表相似的元件，其中：
图1是按照本发明实施例的部分封装半导体的顶视图；
图2是图1的封装半导体的侧视图；
图3是用于制造图1和2的封装半导体的方法流程图；
图4是本发明另一实施例的侧视图；
图5是图4的封装半导体一部分的顶视图；和
图6是以更简化的形式示出图1的整个封装半导体的顶视图。
本领域技术人员应理解，附图中的元件是说明性的，为了简化和清楚，并无需按比例示出。例如，附图中某些元件的尺寸可以相对于另一些元件被放大以增进对本发明实施例的理解。
具体实施方式
一般使用集成电路管芯实现封装半导体，集成电路管芯具有通过引线焊接和焊接指与封装基板结合的至少三行焊接焊盘，引线焊接具有环绕管芯的导电供电环，焊接指在环绕供电环的行中。在集成电路上的焊接焊盘是非交错排列的。它们以行彼此成一直线，在行中焊接焊盘不是交错排列的且它们处于最小间隔。即，基于可用于焊接焊盘的技术，焊接焊盘可以为最大密度。这可以通过使用不同高度的引线焊接来实现。引线焊接的高度一般称为回线高度。通过具有不同的回线高度，一个引线连接可以与另一个引线连接在一条直线，但是也可以比与它成一直线的那个引线高或低。这在平面基板上实现，无需封装基板高度的任何变化。参照附图可以更好地理解本发明的实施例。
图1中示出了包括半导体管芯(集成电路)12和封装基板(管芯载体)14的封装半导体10。管芯12在它的周边具有三行焊接焊盘。自边缘不同的距离、起始于最外行(外行)的三行是16、18和20。导电环22和导电环24在基板14上。与行16、18和20完全环绕集成电路12一样，环22和24完全环绕集成电路12。而且最外行焊接指26和最内行(内行)焊接指28也在基板14上。焊接焊盘行16具有其最终与环22和24结合的焊接焊盘。焊接焊盘行18连接到焊接指行28，焊接焊盘行20连接到焊接指行16。例如，行16、18和20的示例焊接焊盘是彼此成一直线的焊接焊盘30、32和34。相似地，在焊接指行28中的示例焊接指是焊接指36，在焊接指行26中的示例焊接指是焊接指38。在该实例中，焊接指36通过引线焊接由引线连接到焊接焊盘32。焊接焊盘30由引线焊接连接到焊接指38。焊接焊盘34连接到环24。环22和24用于供电连接，例如提供正电压和接地。仅示出了实际完成的封装10和管芯12的一部分。存在更多的焊接焊盘和焊接指。示出了焊接指，在该焊接指中称其为放射状成一直线，因为它们分散成围绕角部，而不是直的与它们连接的焊接焊盘成一直线。
如图1所示，行16、18和20沿着边缘(侧边)21和边缘23。对于行16-20的一部分，它们与边缘21平行，另一部分与边缘23平行。由此关于边缘21，行16的一部分沿着平行于边缘21的第一轴，行18的一部分沿着平行于边缘21的第二轴，行20的一部分沿着平行于边缘21的第三轴。自每行的三个焊接焊盘的位置与沿着垂直于边缘21的每个轴成一直线。例如30-34垂直于边缘21成一直线。存在这样的情况：对于沿着平行于管芯的一个或多个边缘而不是从各方面围绕管芯延伸的像行16-18这样的焊接焊盘行是有利的。
如图1所示，如从顶视图中看到的那样，连接到焊接指36和38的引线和从焊接焊盘30、32和34连接到环24的引线非常靠近。它们甚至在同一直线上。但是，它们自集成电路12和封装基板14间隔开不同的垂直距离。在该特定结构中，焊接焊盘为三行，焊接指为两行，附带两个环。由此，存在有效四行的连接深度。在另外的情况中，供电连接可以不在完整环中，由焊接指行占据图1中环22和24所在的位置。这些焊接指可以是供电连接或信号连接。这表示在连接到封装基板上的至少三行焊接指的集成电路上可能存在三行焊接焊盘的情况。
图2所示的是图1所示的封装半导体10的侧视图。这示出具有顶表面40的管芯12，在顶表面40上具有焊接焊盘30、32和34。在共用平面上是焊接焊盘30、32和34，这被认作封装半导体10的共用层。同样，在基板14上示出了环22、环24、焊接指36和焊接指38。环22和24以及焊接指36和38在基板14的顶表面42上。顶表面42可以认为是平面，还可以认为是封装半导体10的层。由此，焊接焊盘30和34在一个共用的层上，环22、24和焊接指36和38在另一个共用的层上。
由已知的换向自动点焊技术实现焊接焊盘34和环24之间的引线连接。这使用标准引线焊接实现，其中在用引线与其连接的焊接焊盘34上形成焊球。接着焊接机相对于焊接焊盘34横向移动破坏该引线。随后的动作是在环24上形成焊球，向它安装引线，并使那个引线自环24垂直向上提升，接着横向把它移动到焊接焊盘34与先前在焊接焊盘34顶部上形成的焊球连接。结果是引线在它的最高点基本上与在焊接焊盘34上的焊球一样高。通过在焊接焊盘32上首先形成焊球，使引线垂直向上延伸，接着水平延伸，并接着向下延伸到焊接指36，从而制得焊接焊盘32和焊接指36之间的引线连接。通过称为楔形焊接的技术制得与焊接指36的连接。在引线焊接上通常可以利用这种类型的焊接。在这种情况中，如图2所示的环24和环36之间存在的距离为Y1。该Y1尺寸制得足够大以在引线42和44之间存在距离。同样，图2示出了连接引线焊接30和焊接指38的引线46。在焊接焊盘30上形成焊球，在其中具有垂直延伸的引线，接着在引线44上水平弯曲，并接着向下弯曲到焊接指38。如图2所示的量Y2间隔开焊接指36和焊接指38，Y2足以确保引线44和引线46之间的适当距离。
图2示出封装基板14中具有通孔48、50、52、54和56。而且如图2所示，焊球58、60、62、64和66安装到封装基板14的底表面上。焊球58-66代表一焊球阵列，以致这种封装类型一般被称为球栅阵列(BGA)。但是这种技术可应用于任何引线焊接情况。封装基板可以是接收引线焊接的任何半导体载体。如图1所示，行20中存在焊接焊盘30。行20是内行并与管芯12的外周长间隔开，其距离大于中间行18的间隔。行16是外行并与集成电路12的周边最近。
引线间的间隔距离应至少等于引线的直径。由此，引线42在它的最近点距引线44应间隔开等于或大于引线42和44直径那么大的量。在现有技术中，一般的引线直径为25.4微米。在标准的引线焊接设备中，回线高度大于焊接焊盘和焊接指之间的距离。
图3示出用于形成图1和2的封装半导体10的方法的流程图。图3的流程图包括按照68、70、72、74、76、78、80、82和84连续顺序的方法步骤。这示出管芯设置有例如行30-34的多行。引线焊接形成到在外行上的焊接焊盘，在图1的情况中，外行是具有代表焊接焊盘34的行16。折断该引线，并把焊球形成为焊接指或如图2所示环24的环，并连接回到在外行上的焊接焊盘。由此，引线42是图3的框74中的第二引线的实例。接着从中间行(在此情况中是行18)形成例如引线44的引线，引线还连接到焊接指。在这种情况中，在76中介绍的内行是相对于最外行在内部的行。在这种情况中，最外行是16。相对于行16的内行是行18和行20。在形成引线42之后形成比引线42高的引线44。在形成较高引线之前形成较低引线是较为可靠的工艺。优选地，下引线连接到焊接焊盘的外行。
图3示出在焊接焊盘和封装焊接位置之间完成两个引线连接之后完成引线焊接。进一步的工艺将附加另一个引线连接，例如管芯12和封装基板14之间的引线46。如图1和2所示，存在由引线42、44和46示出的三个不同引线高度，每个引线代表在管芯12和封装基板14之间连接的其它引线。由此，因为它们不必相对于彼此交错排列，在最小间隔形成三行不同行的焊接焊盘。还可以附加第四行，但是这需要行的某些交错排列，导致行不是最小间隔。提供这种技术用于在引线间提供所需的距离，同时维持最大焊接焊盘密度。这通过改变在管芯与管芯和封装基板间的表面之间形成连接的引线高度来实现。通过设置弯曲高度，在引线焊接中实现引线44和46之间的差值。每个引线44和46具有弯曲86和88。这从垂直方向向焊接指弯转基本上90度。使尽可能多的引线形成为具有相同的弯曲高度是理想的。
在这种情况中，使用换向自动点焊技术连接焊接焊盘16作为第一主要步骤。形成第二主要引线，具有足以跳过换向自动焊接引线的弯曲高度。第三步主要步骤是使用比用于引线44的弯曲高度大的弯曲高度设置例如引线46的引线。弯曲高度变化确保引线间的充足间距。最高弯曲高度应最后形成，并应形成在焊接焊盘的最内行。
图4示出包括半导体管芯102、半导体管芯104和封装基板106的封装半导体100。在管芯102上存在焊接焊盘108和110。在管芯104上存在焊接焊盘112和114。在封装基板106上存在焊接指116、118和120。与如图2所示的封装半导体10相似，通孔122、124、126、128和130穿过封装基板106。在封装基板106的底表面上有导电焊球132、134、136、138和140。由此完成的封装半导体100是具有层叠管芯的BGA器件。
在这种情况中，层叠管芯是管芯102和管芯104。管芯102比管芯104小，以暴露焊接焊盘112和114。焊接焊盘114是在外周边上围绕管104的焊接焊盘行的代表焊接焊盘。焊接焊盘112是相对于焊接焊盘114和外行进到内部的焊接焊盘行的代表焊接焊盘。同样，焊接焊盘110是围绕管芯102的焊接焊盘行的代表焊接焊盘。焊接焊盘108是围绕管芯102的焊接焊盘行的代表焊接焊盘，相对于距周边最近且被称为外焊接焊盘的焊接焊盘行具有在内部的关系。焊接指116是具有关于封装基板106的最内位置的焊接指行的代表焊接指。焊接指120是为焊接指最外行的焊接指行的代表焊接指。焊接指118是最内行和外行之间焊接指行的代表焊接指。在该实施例中，在焊接焊盘114和焊接指116之间具有换向自动点焊。由此，管芯104的外行焊接焊盘连接到最内行焊接指。焊接焊盘114由引线142连接到焊接指116。同样，管芯104的最内行(内行)连接到管芯102的最外行(外行)。
如图4所示，焊接焊盘110由引线144连接到焊接焊盘112。焊接焊盘112制得足够大以使在其上能够形成两个焊球。由此，焊接焊盘112通过使用焊球至楔形引线焊接连接到焊接指118。由此，焊接焊盘112具有通过引线焊接连接到其的引线146，并且引线146楔形焊接到焊接指118。焊接焊盘108由引线148连接到焊接指120。还由在一端上的焊球焊接和在另一端上的楔形焊接连接引线148。焊球焊接到焊接焊盘108，楔形焊接到焊接指120。在这种布置中，管芯102由与焊接指116连接到焊接焊盘114上相同方式的换向自动点焊与管芯104电结合。由此，可作为部分相同的处理工序，制得这两种类型的连接。而且同样地，作为部分相同制作的引线焊接，能够形成引线146和148。146和148的弯曲高度可以相同，在它们之间仍然存在足够的间距。
在该实例中，接着管芯102由换向自动点焊常规连接到管芯104并由规则的焊球焊接至楔形焊接连接而与封装基板106连接。由此如图5所示的这种排列提供了与管芯104和封装基板106具有挠性连接的管芯102。同样，也是为了最大挠性，管芯104连接到封装基板106和管芯102。由于管芯102和管芯104不同层并考虑到引线焊接的换向自动点焊能力，实现三个不同高度与封装基板106连接，并且管芯102和管芯104之间的连接容易比从管芯102到封装基板106的连接低。由此，实现了具有高密度容量的层叠管芯布置。如果例如在管芯104上需要第三行焊接焊盘，这可以通过在焊接焊盘112和114之间添加一行焊接焊盘来实现。焊接焊盘112和114进一步被间隔开，而随着新增行的出现仍是最小间隔。新增行提供足以跳过引线142那么高和足以在引线146之下那么低的弯曲高度。这可能需要增加引线146和148的自动点焊高度。在焊接指118和116之间还可以存在其它行焊接指。这需要增加引线146和148的弯曲伸出部分。
图5示出焊接焊盘112，该焊接焊盘112示出分隔的焊球焊接150和152并示出连接到焊球焊接150的引线144和连接到焊球焊接152的引线146。一般技术为把引线带到焊盘上、在焊盘楔形焊接并接着用连续引线延伸到另一位置。这具有使楔形焊接的每侧外形参数不同的问题。在楔形焊接一侧将具有不同于在楔形焊接另一侧上外形的外形。在例如焊接焊盘110和焊接焊盘112之间连接的情况中，这使得难于跳过管芯的边缘。被放大并具有两个焊球焊接的焊接焊盘112在焊接焊盘110和焊接焊盘112之间提供锐角，其提供了引线144距管芯102角的间距。由此可以看到存在能够具有焊接焊盘行的高密度的优点和能够常规地提供层叠管芯布置的挠性。
图6以简化形式并无引线焊接地示出了整个封装IC 10。这样示出了围绕集成电路12的导体行22和24。这还示出焊接焊盘行16、18和20和焊接指行26和28。图6还示出邻近集成电路12周边三行中的焊接焊盘和邻近集成电路12边缘行中的焊接指。为了简化和便于理解，显著地减少了图6所示焊接焊盘和焊接指的数量。
由此，由在同一封装半导体上使用变化的弯曲高度和使用换向自动点焊技术来改变回线的高度，可能实现高密度数引脚伸出，而无需增加管芯的尺寸。多行中的焊接焊盘能够是最大密度并能够彼此成一直线。这可以实现而无需在封装基板中制造空腔。由此，焊接指都在同一平面上，也就是说相同的层和焊接焊盘也都在特定集成电路的同一层上。无需改变集成电路上焊接焊盘的高度或者改变在封装基板上相对于彼此的高度。还可以利用实现回线高度的其他方法。随着设备改变和改进，可以利用可获得的不同焊接类型以使焊球焊接对焊接指和半导体管芯都是有效的。在介绍的该特定实施例中，引线优选为金，金因为它的高导电性和可延展性而成为理想的金属，但可发现其它材料也是另人满意的，例如铜。铜是明显较廉价的材料，并且现在通用于集成电路自身的制造且具有与用在铜工艺中的焊接焊盘材料相匹配的优点。
在上述说明中，参照特定实施例介绍了本发明。但是，本领域普通技术人员应理解，在不脱离如以下权利要求中所阐释的本发明的范围的前提下，能够做出各种改进和变型。因此，认为说明和附图是说明性的，而不是限制的含义，而且所有这些改进都视为包括于本本发明的范围内。
以上参照特定实施例介绍了好处、其它优点和对问题的解决方案。但是，好处、优点、对问题的解决方案以及可以引起任何好处、优点或解决方案发生或使其变得突出的任何因素不构成任何或所有权利要求的严格、所需或必要特征或因素。如这里所使用的，术语“包括”、“包含”(comprises、comprising)或其变型意旨涵盖非排他性的包括，因此，包括一系列元素的工艺、方法、产品或设备不仅包括那些元素，而且还包括没有明显列出或这些工艺、方法、产品或设备所固有的其它元素。

Claims (10)

1.一种半导体封装，包括：
具有带多行焊接焊盘的至少一面的管芯，多行焊接焊盘的每行距管芯边缘的距离不同；
用于支撑管芯的管芯载体，管芯载体具有多个焊接指，所有焊接指在同一层上，多个焊接指环绕管芯分布，第一部分位于管芯载体内部区，第二部分位于管芯载体外部区；和
多个焊接引线，多个焊接引线中的每个把预定的一个焊接焊盘连接到多个焊接指的预定的一个，多个焊接引线的第一部分把焊接焊盘自多行焊接焊盘的外行连接到多个焊接指的第一部分并具有最大高度，多个焊接引线的第二部分把焊接焊盘自多行焊接焊盘的内行连接到多个焊接指的第二部分并具有最小高度，最小高度大于最大高度；
其中，外行焊接焊盘借助换向自动点焊焊接到焊接指，内行焊接焊盘焊接到焊接指，焊接指具有焊球，从而获得多个不同高度的焊接引线并分别符合最大高度和最小高度。
2.一种半导体封装，包括：
具有带多行焊接焊盘的至少一面的管芯，多行焊接焊盘的每行距管芯边缘的距离不同；
用于支撑管芯的管芯载体，管芯载体具有多个焊接指，所有焊接指在同一层上，多个焊接指环绕管芯分布，第一部分位于管芯载体内部区，第二部分位于管芯载体外部区；和
多个焊接引线，多个焊接引线中的每个把预定的一个焊接焊盘连接到多个焊接指的预定的一个，其中：
作为使用不同引线焊接工艺焊接第一焊接焊盘和第二焊接焊盘的结果，多行焊接焊盘第一行的第一焊接焊盘具有不同于多行焊接焊盘第二行的第二焊接焊盘的焊接外形；和
第一焊接焊盘具有换向自动点焊外形，第二焊接焊盘具有焊球焊接外形。
3.如权利要求2所述的半导体封装，其中，第一焊接焊盘和第二焊接焊盘沿着垂直于管芯边缘的轴成一直线，以使在管芯上的第一焊接焊盘和第二焊接焊盘是非交错排列的。
4.如权利要求3所述的半导体封装，其中，所述多行焊接焊盘还包括成一直线的三行和三行以上的焊接焊盘，所述多行焊接焊盘的每行具有借助与管芯边缘垂直的轴与所有剩余行中的每行的预定焊接焊盘成一直线的焊接焊盘。
5.如权利要求2所述的半导体封装，还包括：
位于所述管芯上并具有多个第二管芯焊接焊盘的第二管芯，所述多个第二管芯焊接焊盘的至少第一个连接到所述多行焊接焊盘第一行的第一焊接焊盘，并且所述多个第二管芯焊接焊盘的至少第二个连接到多个所述管芯载体的多个焊接指的一预定焊接指。
6.一种把半导体管芯电连接到管芯载体的方法，包括：
提供具有成一直线的多行焊接焊盘的管芯；
把第一引线焊接到外行管芯焊盘，以形成具有第一高度的引线焊接；
把第二引线焊接到内行管芯焊盘以在内行管芯焊盘上形成电连接，其中第二引线处于高于第一高度的第二高度；
把第二引线安装到第二封装焊接焊盘；和
完成所述半导体管芯的剩余管芯焊接焊盘的引线焊接；
其中，把第一引线引线焊接到外行管芯焊盘包括：
形成焊球；
从焊球折断第一引线；
把第一引线的剩余部分引线焊接到第一封装焊接位置；和
把第一引线安装到在外行管芯焊盘中的焊球。
7.一种半导体封装，包括：
第一管芯，具有相对于第一管芯侧面成一直线的至少两行焊接焊盘；
覆盖在第一管芯上的第二管芯，第二管芯具有相对于第二管芯侧面成一直线的至少两行焊接焊盘；
在第一管芯和第二管芯下的管芯载体，用于支撑第一管芯和第二管芯并提供多个焊接指；
第一引线焊接，把包含于第一管芯的所述至少两行焊接焊盘的第一行内的第一焊接焊盘连接到多个焊接指的预定焊接指；和
第二引线焊接，把包含于第一管芯的所述至少两行焊接焊盘的第二行内的第二焊接焊盘连接到第二管芯的所述至少两行焊接焊盘之一内的预定焊接焊盘。
8.如权利要求7所述的半导体封装，其中，第一引线焊接还包括：
具有多个与其连接的焊接焊盘。
9.如权利要求7所述的半导体封装，其中，第一引线焊接的引线焊接外形类型与第二引线焊接不同。
10.如权利要求7所述的半导体封装，还包括位于管芯载体下的导电球。
CNB028191412A 2001-09-28 2002-09-12 带多行焊接焊盘的半导体芯片 Expired - Lifetime CN100352050C (zh)

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WO2003030225A3 (en) 2003-09-12
US6476506B1 (en) 2002-11-05
WO2003030225B1 (en) 2004-01-08
EP1818984A2 (en) 2007-08-15
TW578285B (en) 2004-03-01
CN1561545A (zh) 2005-01-05
JP2005532672A (ja) 2005-10-27
KR100904956B1 (ko) 2009-06-26
EP1818984A3 (en) 2007-10-03
WO2003030225A2 (en) 2003-04-10
KR20040041635A (ko) 2004-05-17
EP1451870A2 (en) 2004-09-01

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