CN100362618C - 一种半导体器件和制作方法 - Google Patents
一种半导体器件和制作方法 Download PDFInfo
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- CN100362618C CN100362618C CNB2004100923060A CN200410092306A CN100362618C CN 100362618 C CN100362618 C CN 100362618C CN B2004100923060 A CNB2004100923060 A CN B2004100923060A CN 200410092306 A CN200410092306 A CN 200410092306A CN 100362618 C CN100362618 C CN 100362618C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 40
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- 230000004888 barrier function Effects 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
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- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
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- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
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- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract description 33
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- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/706,061 | 2003-11-13 | ||
US10/706,061 US7029964B2 (en) | 2003-11-13 | 2003-11-13 | Method of manufacturing a strained silicon on a SiGe on SOI substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1630025A CN1630025A (zh) | 2005-06-22 |
CN100362618C true CN100362618C (zh) | 2008-01-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100923060A Expired - Fee Related CN100362618C (zh) | 2003-11-13 | 2004-11-08 | 一种半导体器件和制作方法 |
Country Status (2)
Country | Link |
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US (2) | US7029964B2 (zh) |
CN (1) | CN100362618C (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7304336B2 (en) * | 2003-02-13 | 2007-12-04 | Massachusetts Institute Of Technology | FinFET structure and method to make the same |
US7586116B2 (en) * | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Semiconductor device having a semiconductor-on-insulator configuration and a superlattice |
FR2881273B1 (fr) * | 2005-01-21 | 2007-05-04 | St Microelectronics Sa | Procede de formation d'un substrat semi-conducteur de circuit integre |
KR100637692B1 (ko) * | 2005-06-27 | 2006-10-25 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
JP2007165677A (ja) * | 2005-12-15 | 2007-06-28 | Seiko Epson Corp | 半導体基板の製造方法及び半導体装置 |
US7569434B2 (en) * | 2006-01-19 | 2009-08-04 | International Business Machines Corporation | PFETs and methods of manufacturing the same |
US7638398B2 (en) * | 2006-03-31 | 2009-12-29 | Hynix Semiconductor Inc. | Semiconductor device with increased channel area and fabrication method thereof |
JP2009536464A (ja) * | 2006-05-05 | 2009-10-08 | メアーズ テクノロジーズ, インコーポレイテッド | 絶縁体上に半導体が存在する配置及び超格子を有する半導体素子並びに関連方法 |
US7863141B2 (en) * | 2006-07-25 | 2011-01-04 | Chartered Semiconductor Manufacturing, Ltd. | Integration for buried epitaxial stressor |
JP4625793B2 (ja) * | 2006-09-08 | 2011-02-02 | 株式会社東芝 | 半導体デバイス |
JP2009143756A (ja) * | 2007-12-13 | 2009-07-02 | Shin Etsu Chem Co Ltd | GaN層含有積層基板及びその製造方法並びにデバイス |
KR100937599B1 (ko) * | 2007-12-17 | 2010-01-20 | 한국전자통신연구원 | 반도체 장치 및 그 형성 방법 |
FR2965975B1 (fr) * | 2010-10-11 | 2012-12-21 | Commissariat Energie Atomique | Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble |
CN102790004B (zh) * | 2011-05-16 | 2014-06-11 | 中国科学院上海微系统与信息技术研究所 | 一种全隔离混合晶向soi的制备方法 |
GB2501307A (en) * | 2012-04-19 | 2013-10-23 | Univ Warwick | Suspended Ge or Si-Ge semiconductor structure on mono-crystal line Si substrate |
US8617968B1 (en) | 2012-06-18 | 2013-12-31 | International Business Machines Corporation | Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) |
US8859348B2 (en) * | 2012-07-09 | 2014-10-14 | International Business Machines Corporation | Strained silicon and strained silicon germanium on insulator |
US9484423B2 (en) | 2013-11-01 | 2016-11-01 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet III-V channel FETs |
US9570609B2 (en) | 2013-11-01 | 2017-02-14 | Samsung Electronics Co., Ltd. | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
US9647098B2 (en) | 2014-07-21 | 2017-05-09 | Samsung Electronics Co., Ltd. | Thermionically-overdriven tunnel FETs and methods of fabricating the same |
US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
US9391198B2 (en) * | 2014-09-11 | 2016-07-12 | Globalfoundries Inc. | Strained semiconductor trampoline |
CN105702728B (zh) * | 2014-11-28 | 2018-08-10 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
US9679899B2 (en) * | 2015-08-24 | 2017-06-13 | Stmicroelectronics, Inc. | Co-integration of tensile silicon and compressive silicon germanium |
US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
US9530669B1 (en) * | 2015-11-30 | 2016-12-27 | International Business Machines Corporation | Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity |
WO2017123245A1 (en) | 2016-01-15 | 2017-07-20 | Hewlett Packard Enterprise Development Lp | Multilayer device |
WO2017171737A1 (en) * | 2016-03-30 | 2017-10-05 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
FR3064398B1 (fr) * | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
CN108063112B (zh) * | 2017-11-15 | 2020-06-16 | 上海华虹宏力半导体制造有限公司 | 一种局部化soi区域制造方法 |
US10381801B1 (en) | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
US10573755B1 (en) | 2018-09-12 | 2020-02-25 | International Business Machines Corporation | Nanosheet FET with box isolation on substrate |
US11502106B2 (en) * | 2020-02-11 | 2022-11-15 | Globalfoundries U.S. Inc. | Multi-layered substrates of semiconductor devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165383A (en) * | 1998-04-10 | 2000-12-26 | Organic Display Technology | Useful precursors for organic electroluminescent materials and devices made from such materials |
US6274444B1 (en) * | 1999-07-30 | 2001-08-14 | United Microelectronics Corp. | Method for forming mosfet |
US6368931B1 (en) * | 2000-03-27 | 2002-04-09 | Intel Corporation | Thin tensile layers in shallow trench isolation and method of making same |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3602841A (en) * | 1970-06-18 | 1971-08-31 | Ibm | High frequency bulk semiconductor amplifiers and oscillators |
US4853076A (en) * | 1983-12-29 | 1989-08-01 | Massachusetts Institute Of Technology | Semiconductor thin films |
US4665415A (en) * | 1985-04-24 | 1987-05-12 | International Business Machines Corporation | Semiconductor device with hole conduction via strained lattice |
EP0219641B1 (de) | 1985-09-13 | 1991-01-09 | Siemens Aktiengesellschaft | Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung |
US4958213A (en) * | 1987-12-07 | 1990-09-18 | Texas Instruments Incorporated | Method for forming a transistor base region under thick oxide |
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
US5006913A (en) | 1988-11-05 | 1991-04-09 | Mitsubishi Denki Kabushiki Kaisha | Stacked type semiconductor device |
US5108843A (en) * | 1988-11-30 | 1992-04-28 | Ricoh Company, Ltd. | Thin film semiconductor and process for producing the same |
US4952524A (en) * | 1989-05-05 | 1990-08-28 | At&T Bell Laboratories | Semiconductor device manufacture including trench formation |
US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
US5060030A (en) * | 1990-07-18 | 1991-10-22 | Raytheon Company | Pseudomorphic HEMT having strained compensation layer |
US5081513A (en) * | 1991-02-28 | 1992-01-14 | Xerox Corporation | Electronic device with recovery layer proximate to active layer |
US5371399A (en) * | 1991-06-14 | 1994-12-06 | International Business Machines Corporation | Compound semiconductor having metallic inclusions and devices fabricated therefrom |
US5134085A (en) * | 1991-11-21 | 1992-07-28 | Micron Technology, Inc. | Reduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memories |
US5391510A (en) * | 1992-02-28 | 1995-02-21 | International Business Machines Corporation | Formation of self-aligned metal gate FETs using a benignant removable gate material during high temperature steps |
US6008126A (en) * | 1992-04-08 | 1999-12-28 | Elm Technology Corporation | Membrane dielectric isolation IC fabrication |
US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5561302A (en) * | 1994-09-26 | 1996-10-01 | Motorola, Inc. | Enhanced mobility MOSFET device and method |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
US5557122A (en) * | 1995-05-12 | 1996-09-17 | Alliance Semiconductors Corporation | Semiconductor electrode having improved grain structure and oxide growth properties |
US6403975B1 (en) * | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
US5880040A (en) * | 1996-04-15 | 1999-03-09 | Macronix International Co., Ltd. | Gate dielectric based on oxynitride grown in N2 O and annealed in NO |
US6211039B1 (en) * | 1996-11-12 | 2001-04-03 | Micron Technology, Inc. | Silicon-on-insulator islands and method for their formation |
US5861651A (en) * | 1997-02-28 | 1999-01-19 | Lucent Technologies Inc. | Field effect devices and capacitors with improved thin film dielectrics and method for making same |
US5898978A (en) * | 1997-03-03 | 1999-05-04 | John D. Hollingsworth On Wheels, Inc. | Metallic clothing for carding segments and flats |
US5940736A (en) * | 1997-03-11 | 1999-08-17 | Lucent Technologies Inc. | Method for forming a high quality ultrathin gate oxide layer |
US6309975B1 (en) * | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
US6025280A (en) * | 1997-04-28 | 2000-02-15 | Lucent Technologies Inc. | Use of SiD4 for deposition of ultra thin and controllable oxides |
US5960297A (en) * | 1997-07-02 | 1999-09-28 | Kabushiki Kaisha Toshiba | Shallow trench isolation structure and method of forming the same |
JP3139426B2 (ja) * | 1997-10-15 | 2001-02-26 | 日本電気株式会社 | 半導体装置 |
US6066545A (en) * | 1997-12-09 | 2000-05-23 | Texas Instruments Incorporated | Birdsbeak encroachment using combination of wet and dry etch for isolation nitride |
US6274421B1 (en) * | 1998-01-09 | 2001-08-14 | Sharp Laboratories Of America, Inc. | Method of making metal gate sub-micron MOS transistor |
KR100275908B1 (ko) * | 1998-03-02 | 2000-12-15 | 윤종용 | 집적 회로에 트렌치 아이솔레이션을 형성하는방법 |
US6361885B1 (en) * | 1998-04-10 | 2002-03-26 | Organic Display Technology | Organic electroluminescent materials and device made from such materials |
US5989978A (en) | 1998-07-16 | 1999-11-23 | Chartered Semiconductor Manufacturing, Ltd. | Shallow trench isolation of MOSFETS with reduced corner parasitic currents |
JP4592837B2 (ja) * | 1998-07-31 | 2010-12-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6521694B2 (en) * | 1998-08-11 | 2003-02-18 | Dsm N.V. | Process for hydrogenation of carbon-carbon double bonds of an unsaturated polymer |
US6319794B1 (en) * | 1998-10-14 | 2001-11-20 | International Business Machines Corporation | Structure and method for producing low leakage isolation devices |
US6235598B1 (en) * | 1998-11-13 | 2001-05-22 | Intel Corporation | Method of using thick first spacers to improve salicide resistance on polysilicon gates |
US6117722A (en) * | 1999-02-18 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company | SRAM layout for relaxing mechanical stress in shallow trench isolation technology and method of manufacture thereof |
US6255169B1 (en) * | 1999-02-22 | 2001-07-03 | Advanced Micro Devices, Inc. | Process for fabricating a high-endurance non-volatile memory device |
US6284626B1 (en) * | 1999-04-06 | 2001-09-04 | Vantis Corporation | Angled nitrogen ion implantation for minimizing mechanical stress on side walls of an isolation trench |
US6656822B2 (en) * | 1999-06-28 | 2003-12-02 | Intel Corporation | Method for reduced capacitance interconnect system using gaseous implants into the ILD |
US6228694B1 (en) * | 1999-06-28 | 2001-05-08 | Intel Corporation | Method of increasing the mobility of MOS transistors by use of localized stress regions |
US6281532B1 (en) * | 1999-06-28 | 2001-08-28 | Intel Corporation | Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
US6362082B1 (en) * | 1999-06-28 | 2002-03-26 | Intel Corporation | Methodology for control of short channel effects in MOS transistors |
KR100332108B1 (ko) * | 1999-06-29 | 2002-04-10 | 박종섭 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
US6483171B1 (en) | 1999-08-13 | 2002-11-19 | Micron Technology, Inc. | Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same |
US6284623B1 (en) * | 1999-10-25 | 2001-09-04 | Peng-Fei Zhang | Method of fabricating semiconductor devices using shallow trench isolation with reduced narrow channel effect |
US6476462B2 (en) * | 1999-12-28 | 2002-11-05 | Texas Instruments Incorporated | MOS-type semiconductor device and method for making same |
US6221735B1 (en) * | 2000-02-15 | 2001-04-24 | Philips Semiconductors, Inc. | Method for eliminating stress induced dislocations in CMOS devices |
US6531369B1 (en) * | 2000-03-01 | 2003-03-11 | Applied Micro Circuits Corporation | Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) |
EP1152462A1 (de) * | 2000-05-05 | 2001-11-07 | Infineon Technologies AG | Verfahren zur Herstellung eines Bipolartransistors |
KR100340878B1 (ko) * | 2000-06-28 | 2002-06-20 | 박종섭 | 에스오아이 소자의 제조방법 |
US6493497B1 (en) * | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6501121B1 (en) * | 2000-11-15 | 2002-12-31 | Motorola, Inc. | Semiconductor structure |
US7312485B2 (en) | 2000-11-29 | 2007-12-25 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
US6563152B2 (en) * | 2000-12-29 | 2003-05-13 | Intel Corporation | Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel |
US20020086497A1 (en) * | 2000-12-30 | 2002-07-04 | Kwok Siang Ping | Beaker shape trench with nitride pull-back for STI |
US6265317B1 (en) * | 2001-01-09 | 2001-07-24 | Taiwan Semiconductor Manufacturing Company | Top corner rounding for shallow trench isolation |
KR100414217B1 (ko) * | 2001-04-12 | 2004-01-07 | 삼성전자주식회사 | 게이트 올 어라운드형 트랜지스터를 가진 반도체 장치 및그 형성 방법 |
US6403486B1 (en) * | 2001-04-30 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method for forming a shallow trench isolation |
TW550681B (en) * | 2001-06-22 | 2003-09-01 | Memc Electronic Materials | Process for producing silicon on insulator structure having intrinsic gettering by ion implantation |
JP2003031495A (ja) * | 2001-07-12 | 2003-01-31 | Hitachi Ltd | 半導体装置用基板の製造方法および半導体装置の製造方法 |
US6531740B2 (en) * | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
US6498358B1 (en) * | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
US6908810B2 (en) * | 2001-08-08 | 2005-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of preventing threshold voltage of MOS transistor from being decreased by shallow trench isolation formation |
JP2003060076A (ja) * | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
WO2003025984A2 (en) * | 2001-09-21 | 2003-03-27 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
US20030057184A1 (en) * | 2001-09-22 | 2003-03-27 | Shiuh-Sheng Yu | Method for pull back SiN to increase rounding effect in a shallow trench isolation process |
US6656798B2 (en) | 2001-09-28 | 2003-12-02 | Infineon Technologies, Ag | Gate processing method with reduced gate oxide corner and edge thinning |
US6577131B2 (en) * | 2001-10-05 | 2003-06-10 | American Standard International Inc. | Motor terminal fixture |
US6461936B1 (en) * | 2002-01-04 | 2002-10-08 | Infineon Technologies Ag | Double pullback method of filling an isolation trench |
US6936869B2 (en) * | 2002-07-09 | 2005-08-30 | International Rectifier Corporation | Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys |
US6670798B1 (en) * | 2002-09-25 | 2003-12-30 | Pitney Bowes Inc. | Auto power-on, hot-pluggable user interface controller for mailing machines |
US6717216B1 (en) | 2002-12-12 | 2004-04-06 | International Business Machines Corporation | SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device |
US6825529B2 (en) | 2002-12-12 | 2004-11-30 | International Business Machines Corporation | Stress inducing spacers |
US6974981B2 (en) | 2002-12-12 | 2005-12-13 | International Business Machines Corporation | Isolation structures for imposing stress patterns |
US7078298B2 (en) * | 2003-05-20 | 2006-07-18 | Sharp Laboratories Of America, Inc. | Silicon-on-nothing fabrication process |
US7662701B2 (en) * | 2003-05-21 | 2010-02-16 | Micron Technology, Inc. | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers |
US6887798B2 (en) | 2003-05-30 | 2005-05-03 | International Business Machines Corporation | STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
US7279746B2 (en) | 2003-06-30 | 2007-10-09 | International Business Machines Corporation | High performance CMOS device structures and method of manufacture |
FR2858876B1 (fr) * | 2003-08-12 | 2006-03-03 | St Microelectronics Sa | Procede de formation sous une couche mince d'un premier materiau de portions d'un autre materiau et/ou de zones de vide |
US7119403B2 (en) | 2003-10-16 | 2006-10-10 | International Business Machines Corporation | High performance strained CMOS devices |
US6977194B2 (en) | 2003-10-30 | 2005-12-20 | International Business Machines Corporation | Structure and method to improve channel mobility by gate electrode stress modification |
US8008724B2 (en) | 2003-10-30 | 2011-08-30 | International Business Machines Corporation | Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers |
US7129126B2 (en) * | 2003-11-05 | 2006-10-31 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
US7015082B2 (en) | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
US7122849B2 (en) | 2003-11-14 | 2006-10-17 | International Business Machines Corporation | Stressed semiconductor device structures having granular semiconductor material |
US7247912B2 (en) | 2004-01-05 | 2007-07-24 | International Business Machines Corporation | Structures and methods for making strained MOSFETs |
US7205206B2 (en) | 2004-03-03 | 2007-04-17 | International Business Machines Corporation | Method of fabricating mobility enhanced CMOS devices |
-
2003
- 2003-11-13 US US10/706,061 patent/US7029964B2/en not_active Expired - Lifetime
-
2004
- 2004-11-08 CN CNB2004100923060A patent/CN100362618C/zh not_active Expired - Fee Related
-
2005
- 2005-02-22 US US11/061,444 patent/US7468538B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6165383A (en) * | 1998-04-10 | 2000-12-26 | Organic Display Technology | Useful precursors for organic electroluminescent materials and devices made from such materials |
US6274444B1 (en) * | 1999-07-30 | 2001-08-14 | United Microelectronics Corp. | Method for forming mosfet |
US6368931B1 (en) * | 2000-03-27 | 2002-04-09 | Intel Corporation | Thin tensile layers in shallow trench isolation and method of making same |
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CN1630025A (zh) | 2005-06-22 |
US7468538B2 (en) | 2008-12-23 |
US7029964B2 (en) | 2006-04-18 |
US20050142700A1 (en) | 2005-06-30 |
US20050106790A1 (en) | 2005-05-19 |
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