CN100373632C - 设有阻挡/间隔层的iii族氮化物基高电子迁移率晶体管 - Google Patents

设有阻挡/间隔层的iii族氮化物基高电子迁移率晶体管 Download PDF

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CN100373632C
CN100373632C CNB028140958A CN02814095A CN100373632C CN 100373632 C CN100373632 C CN 100373632C CN B028140958 A CNB028140958 A CN B028140958A CN 02814095 A CN02814095 A CN 02814095A CN 100373632 C CN100373632 C CN 100373632C
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I·P·斯莫奇克瓦
W·瓦鲁基维茨
P·查瓦卡尔
吴益逢
S·克勒
U·米施拉
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Wolfspeed Inc
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Cree Lighting Co
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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Abstract

本发明揭示一种高频性能得以提高的III族氮化物基础高电子迁移率晶体管(HEMT)(10)。HEMT(10)的一实施例包括一氮化镓缓冲层(26)，而在氮化镓缓冲层(26)上具有一AlyGa1-yN(y＝1或y≈1)层(28)。一AlxGa1-xN(0≤x≤0.5)阻挡层(30)则在AlyGa1-yN层(28)上，与氮化镓缓冲层(26)相对，AlyGa1-yN层(28)的铝含量比AlxGa1-xN阻挡层(30)高。一AlyGa1-yN层(28)最佳是y＝1或y≈1和一AlxGa1-xN阻挡层(30)最佳是(0≤x≤0.5)。一2DEG(38)在氮化镓缓冲层(26)和AlyGa1-yN层(28)之间的界面形成。各自的源极、漏极和栅极接点(32、34、36)在AlxGa1-xN层(30)上形成。HEMT(10)也可包括基片(22)，其靠近缓冲层(26)并与AlyGa1-yN层(28)相对和成核层(24)，其包括在氮化镓缓冲层(26)和基片(22)之间。

Description

设有阻挡/间隔层的III族氮化物基高电子迁移率晶体管
本申请是基于Smorchkova等人在2001年5月11日所提出的申请号为60/290,195的临时申请。
技术领域
本发明涉及一种高频固态晶体管，更具体地说，涉及III族氮化物基高电子迁移率晶体管(HEMTs)。
背景技术
HEMT是一种常见的固态晶体管，其通常由诸如硅(Si)或砷化镓(GaAs)的半导体材料构成。Si的一缺点是电子迁移率低(约1450cm2/V-S)，这会产生高源电阻(high source resistance)。此电阻可使Si基HEMT的高性能增益劣化[CRC Press，The Electrical Engineering Handbook，Second Edition，Dorf，p.994，(1997)]。
GaAs基HEMTs已成为卫星通讯、蜂窝式手机以及民用及军用雷达之讯号放大标准，GaAs电子迁移率较Si基的高(约6000cm2/V-S)及源电阻较Si基的低，这使GaAs基器件能够在较高频工作。但GaAs之带隙很小(室温1.42eV)及击穿电压很小，这使GaAs基HEMT无法在高频下提供高功率。
AlGaN/GaN(氮化铝镓/氮化镓)半导体材料制造的改良着重在AlGaN/GaNHEMT的高频、高温和大功率应用的发展。AlGaN/GaN具有大带隙、高峰值和饱和电子速度值[B.Belmont、K.Kim and M.Shur，J.Appl.Phys，74，1818(1993)]。AlGaN/GaN HEMTs也可具有二维电子气片密度(2DEG sheet density)超过1013/cm2和较高的电子迁移率(达到2019cm2/Vs)[R.Gaska、J.W.Yang、A.Osinsky、Q.Chen、M.A.Khan、A.O.Orlov、G.L.Snider和M.S.Shur，Appl.Phys.Lett.，72，707(1998)]。所述这些性能使AlGaN/GaN HEMTs在高频中提供高功率。
AlGaN/GaN HEMTs生长在蓝宝石基片，其功率密度为4.6W/mm的功率密度和总功率为7.6W[Y.F.Wu et al.，IEICE Trans.Electron.，E-82-C，1895(1999)]。最近，在SiC上生长的AlGaN/GaN HEMTs在8GHz中的功率密度为9.8W/mm[Y.F.Wu，D.Kapolnek，J.P.Ibbetson，P.Parikh，B.P Keller和U.K.Mishra，IEEE Trans.Electron.Dev.，48，586(2001)]和在9GHz中的总输出功率为22.9[M.Micovic，A kurdoghl ian，P.Janke，P.Hashimoto，D.W.S.Wong，J.S.Moon，L.McCray和C.Nguyen，IEEE Trans.Electron.Dev.，48，591(2001)]。
Khan等人的美国专利号5,192,987揭示了在一缓冲层和一基片上生长的GaN/AlGaN基HMETs。Gaska等人在题为”High-Temperature PerformanceAlGaN/GaN HFET’s on SiC Substrates，”(IEEE Electron Device Letters，Vol.18，NO 10，1997年10月，第492页)及Ping等人在题为“DC and MicrowavePerformance of High Current AlGaN Heterostructure Field Effect TransistorsGrown on P-type SiC Substrates，”(IEEE Electron Devices Letters，Vol.19，No.2，1998年2月，第54页)中描述其它AlGaN/GaN HEMTs及场效应晶体管(FETs)。这些器件中的一些表明一增益频宽产品(fT)高达67千兆赫[K.Chu et al.WOCSEMMAD，Monterey，CA(1998年2月)]及在10GHz功率密度高达2.84W/mm[G.Sullivan et al，“High Power10-GHz Operation of AlGaN HEMT’s in InsulatingSiC，”IEEE Electron Device Letters，Vol.19，No.6，1998年6月第198页及Wu et al，IEEE Electron Device Letters，19卷，No.2，第50页，1998年2月]。
图1所示为一般的AlGaN/GaN HEMT10，其包括一靠近一蓝宝石或碳化硅基片12的GaN缓冲层11和一靠近GaN缓冲层11与基片12相对的AlxGa1-xN(x≈0.1-0.5)层13。一成核层14可包括在基片12和GaN缓冲层11之间，以减少两层之间的晶格失配。HEMT10也包括源极、栅极和漏极接点15，16，17。AlxGa1-xN层里铝的含量产生一压电电荷，其累积在与GaN层面接的界面中，以形成二维电子气(2DEG)18。当AlxGa1-xN层里的铝含量增加，压电电荷也增加，这使HEMT的2DEG和跨导均出现有利的增大。
然而，2DEG的迁移率通常是由GaN和AlxGa1-xN层11，13之间的界面粗糙程度和压电电荷散射所限制，这是由于接近界面的AlxGa1-xN层13里的局部不规则性的结果。
以一AlyGa1-yN(y＝1或y≈1)层取代AlxGa1-xN(x≈0.1-0.5)层13，一些有利条件就可建立。AlN(y＝1的AlyGa1-yN)和GaN之间的2.4％晶格失配可在两层之间的界面上产生最大可能的压电电荷。用一AlN层亦减低不限制2DEG的迁移率的层与层之间的压电电荷散射。
然而，AlN和GaN之间的高晶格失配规定AlN层的厚度应小于50。如果层较厚，该器件会出现欧姆接触问题，层里的材料质量劣化，器件的可靠性降低和材料会较难生长。然而，一具有50或以下的AlN层的HEMT则很容易有高的栅漏。
发明内容
本发明提供具有良好2DEG迁移率的经改进的III族氮化合物基HEMTs，其最好由AlGaN/GaN构成。根据本发明构成的一HEMT包括一GaN缓冲层，在GaN层上有AlyGa1-yN层。GaN缓冲层相对的AlyGa1-yN层上面包括一AlxGa1-xN阻挡层，AlyGa1-yN层中铝含量比AlxGa1-xN阻挡层的较高。一2DEG在GaN缓冲层和AlyGa1-yN层之间的界面上形成。一AlyGa1-yN层最佳是y＝1或y≈1和一AlxGa1-xN层最佳则是0≤x≤0.5。
HEMT也有各自的源极、漏极和与它的AlxGa1-xN阻挡层接触的栅极接点。HEMT也可在由蓝宝石、碳化硅、氮化镓和硅组成的组中的一种材料构成的基片上形成。基片靠近缓冲层并与AlyGa1-yN层相对。HEMT也可在GaN缓冲层和基片之间具有一成核层。
GaN层上的HEMT的AlyGa1-yN层提供一高压电电荷和在两层之间的界面减少压电散射。AlyGa1-yN层应当较薄，因为AlN和GaN之间的高晶格失配。薄的AlyGa1-yN层上的AlxGa1-xN层使HEMT的栅极漏保持在低水平。
以下，将结合附图对本发明作更详细地叙述，由此，本发明这些及其余的进一步特性和优点对于本领域的技术人员是显而易见的。
附图说明
图1为一先有技术AlGaN/GaN HEMT的剖视图；
图2为根据本发明的AlGaN/GaN HEMT的第一实施例的剖视图；
图3为图2中所示的AlGaN/GaN HEMT的频带图；
图4为根据本发明的AlGaN/GaN HEMT的第二实施例的剖视图；
图5为图2HEMT里采用数字方式制作的阻挡层的剖视图和
图6为根据本发明具有凹的栅极结构的阻挡层的HEMT的第III实施例的剖视图。
具体实施例
图2所示为一根据本发明构成的HEMT20实施例。它包括一可由不同材料如蓝宝石(Al2O3)、碳化硅(SiC)、氮化镓(GaN)或硅(Si)制成之基片22。较佳的基片为4H多型的碳化硅。其它亦可使用的碳化硅多型包括3C、6H及15R多型。
碳化硅与III族氮化物之晶体晶格匹配较蓝宝石接近得多，故而形成较高品质之III族氮化物薄膜。碳化硅之热导性亦很高，故在碳化硅上的III族氮化物器件的总输出功率未受该基片的热量散失限制(以一些在蓝宝石形成的器件情形可能就如此)。另外，碳化硅基片可有效地用于器件绝缘和降低寄生电容器件，使之可做为商用器件。North Corolina Durham的Cree Research，Inc.有提供SiC基片，而其制造方法则在科学文献及美国专利号Re.34,861；4,946,547及5,200,022中揭示。
新的HEMT20可采用多种不同材料制造，但较佳的是用III族氮化物基材料制造。III族氮化物是指在氮和周期表III族元素通常是铝(Al)、镓(Ga)和铟(In)之间所形成的半导体化合物。所述术语亦指如AlGaN和AlInGaN的III元化合物及第III元化合物。业已发现，纤维锌矿III族氮化物里自发的和压电极化比常规的III-V族和II-VI族的半导体化合物大十倍。
基片22上可包括成核层24以降低基片22和HEMT20里下一层之间的晶格失配。成核层24之厚度应该约为1000埃()，虽然其他的厚度也可采用。成核层可由不同的半导体材料制作而其中一适合材料为AlzGa1-zN(0≤z≤1)，就是说较佳的是AlN(z＝1的AlzGa1-zN)。
一成核层24上有一GaN层26，其与基片22相对。GaN层的厚度应大约在0至5微米的范围里，虽然别的厚度也可用。HEMT20的一较佳实施例中，GaN层26的厚度是2微米。另外，GaN层26也可以AlwGa1-wN(0≤w≤1)构成。
GaN层26上包括一AlyGa1-yN(y＝1或y≈1)层28，其与成核层24相对。层28的厚度应少于50，但在不同的配置中可用其它厚度。较佳的厚度大约为20。层28(AlyGa1-yN而y＝1)可由多层单层AlN构成，每一单层厚度大约是5至20。例如，由每一5厚度的4单层构成的层28的厚度为20。
AlyGa1-yN层28上包括一AlxGa1-xN阻挡层30，其与GaN层26相对。层30较佳的组合物为0≤x≤0.5，虽然组合物的x可在0和1之间变化。层30的厚度范围应约100至1000，虽然其它的厚度也可用。层30的厚度是取决于层里铝的成分，铝的成分越高，层30就可越薄。一HEMT20实施例中，层30的厚度大约是300和其组合物为AlxGa1-xN(x≈0.33)。如果阻挡层太薄(大约少于100)，层30对HEMT20里的2DEG不产生有效的作用。
HEMT20包括源极、漏极和栅极接点32、34和36。源极和漏极接点32和34可由不同的材料制造，包括但不限于钛、铝或镍的合金。栅极接点36也可由不同的材料制造，包括但不限于钛、铂、铬、钛合金和钨合金或硅化铂。
一2DEG38在AlyGa1-yN层28和GaN层26之间接合处形成。如上所述，AlN(y＝1的AlyGa1-yN)层28和GaN层26之间的2.4％晶格失配导致两层之间界面上可能产生最大压电电荷。AlN(y＝1的AlyGa1-yN)层28也减少层与层之间会限制2DEG迁移率的压电散射。
通过在GaN层26上具有一AlN(y＝1的AlyGa1-yN)层28，使HEMT的2DEG38的迁移率增加。通过AlN(y＝1的AlyGa1-yN)层28上具有一较厚的AlxGa1-xN层30，HEMT20就不会有高栅漏，这会在仅有AlN(y＝1的AlyGa1-yN)层28时发生。
根据本发明，一HEMT20具有一厚度为20的AlyGa1-yN层(y＝1)，其上有厚度为200的AlxGa1-xN层(x＝0.25)，其2DEG密度为7.45×1012cm2，其迁移率为2195cm2/VS。一HEMT20具有厚度为20的AlyGa1-yN层(y＝1)，其上有厚度为230的AlxGa1-xN层(x＝0.33)，其2DEG密度为1.10×1013cm2，其迁移率为2082cm2/VS。2DEG的片密度随AlxGa1-xN阻挡层的铝的成分增加而增加。
图3所示为图2中HEMT20的能带图40，其取自点42，垂直经过AlxGa1-xN阻挡层30、AlyGa1-yN层28、2DEG38和GaN层26。每一层26、28和30各有一非零总极化P1、P2和P3，它们指向同一方向。AlyGa1-yN层28里的总极化强度比周围的层26和30高因为它的铝含量增高。这种极化强度的梯度导致在三层之间界面A和B上产生片电荷的极化。一正极化片电荷在GaN层26和AlyGa1-yN层28之间的界面A上。一负极化片电荷位于AlxGa1-xN层30和AlyGa1-yN层28之间的界面。在AlyGa1-yN层28里有一由此产生的非零的电场。结果，AlxGa1-xN阻挡层30与AlyGa1-yN层28在界面B的导带边缘则设置在GaN层26的导带边缘上。中层28较薄，几乎可透过电子，纵使在层与层之间导带不连续部分较大。因此，电子由顶层传输到底层和在层26与28之间的界面A形成一2DEG沟道。通过改变各层中的组份在同一半导体材料层之间可以达到这种交错的能带隙。
图4所示为根据本发明制作的HEMT50。另一实施例，其由III族氮化物半导体材料构成。使一不是故意地掺杂或半绝缘的GaN缓冲层52在蓝宝石基片54上形成。使一比较薄(≈1纳米)的AlN层56在GaN缓冲层52上面形成，随后以硅掺杂的GaN层58盖着。AlN层56的表面是由GaN60为封端，因此，所有层里自然极化均指向基片54。另外，各层里压电极化以与自然极化相同的方向指向。自然极化和压电极化的强度随各层里铝的含量增加而增加，AlN层56的铝含量最高和总极化强度最高。图3中所示的交错的能带隙调整可在HEMT的层与层之间用在AlN层和GaN层之间的界面上形成的2DEG59来达到。HEMT50也包括源极、漏极和栅极接点62、64和66。
本发明的HEMT构件可用所有III族氮化物及其与磷、砷和锑的合金来制作。层的顺序应是极化的梯度使十分薄的中层里具有强的电场。HEMT可用不同的方法制作，其包括但不限于有机金属化学气相沉积(MOCVD)、分子束外延(MBE)或气相外延(VPE)。AlxGa1-xN阻挡层30和AlyGa1-yN层28能在氢、氮或III氨的载体气体中生长。图5所示为具有AlxGa1-xN阻挡层78和AlyGa1-yN层III79的HEMT70，其类似图2里HEMT20的相同层30和28。然而，在这实施例中，阻挡层78是以数字方式制作而获得所要求的铝和镓含量。阻挡层78可具有每一组4层的多层组，其中一层是AlN层75和三层是GaN层76a-c。一阻挡层72具有四层组，四层为Al层75和十二层为GaN层76a-c。这使全部阻挡层的铝含量为25％和氮化镓为75％。同样，具有3层的每一层组，其中一层铝和两层砷化镓，铝含量则为33％和氮化镓为67％。
在利用所述方法制作阻挡层72中，不同气体的流率不需细致地调整以达到所要求铝和氮化镓的含量。这种方法也使一阻挡层72具有较准确的材料含量和使整个阻挡层72的材料含量均是一致的。阻挡层72可用氮化镓或氮化铝层作封端。这种方法也可用作制造其它HEMT层。
图6所示为根据本发明构成的HEMT80的另一实施例。它具有基片82、氮化镓缓冲层84、AlyGa1-yN(x＝1或x≈1)层86、2DEG88、源极接点90、漏极接点92和栅极接点94，其全部与图2中所示的HEMT20相似。然而，本实施例中，阻挡层96由氮化镓(AlxGa1-xN，x＝0)。阻挡层96可以是N型，以均匀或掺杂模式。采用这种的组合物，可制作厚度(500-1000)的阻挡层96，其能做成凹的栅极结构。在一标准平面HEMT结构中，栅极、漏极和源极接点的电阻均相同。把阻挡层96做成较厚，则每一接点的电阻减小。然而，最好栅极接点94的电阻增大而源极和漏极接点90和92的电阻保持低值。厚的阻挡层96可被蚀刻使栅极接点94处较薄。这样就可增加栅极接点94的电阻同时保持源极和漏极接点90和92的电阻最小。
虽然业已参照一些较佳的构型对本发明作了较详细地叙述，但也可能有其他一些改型。HEMT的其他层也可以采用数字成层方式制作。因此，所附的权利要求的精神及范围不应当限于本说明其中所述的一些较佳的构型。

Claims (10)

1.一种高电子迁移率晶体管(20)，其包括：
一GaN缓冲层(26)；
一AlyGa1-yN层(28)，其在所述氮化镓缓冲层(26)上；
一AlxGa1-xN阻挡层(30)，其在所述AlyGa1-yN层(28)上，与所述氮化镓缓冲层(26)相对，所述AlyGa1-yN层(28)的Al含量比所述AlxGa1-xN阻挡层(30)的高，其中所述阻挡层的厚度大于100，
二维电子气(38)，其在氮化镓缓冲层(26)和所述AlyGa1-yN层(28)之间的界面上。
2.根据权利要求1的高电子迁移率晶体管，其特征在于所述AlyGa1-yN层(28)包括AlyGa1-yN，其中y＝1。
3.根据权利要求1的高电子迁移率晶体管，其特征在于所述AlxGa1-xN阻挡层(30)包括AlxGa1-xN，其中0≤x≤0.5。
4.根据权利要求1的高电子迁移率晶体管，其特征在于高电子迁移率晶体管进一步包括各自在所述AlxGa1-xN阻挡层(30)上的源极、漏极和栅极接点(32、34、36)。
5.根据权利要求1的高电子迁移率晶体管，其特征在于高电子迁移率晶体管还包括一基片(22)，其靠近所述缓冲层(26)，与所述AlyGa1-yN层(28)相对，所述基片(22)由蓝宝石、碳化硅、氮化镓和硅组成的组中的一种材料构成。
6.根据权利要求5的高电子迁移率晶体管，其特征在于高电子迁移率晶体管进一步包括一成核层(24)，其在所述氮化镓缓冲层(26)和所述基片(22)之间。
7.根据权利要求4的高电子迁移率晶体管，其特征在于所述栅极接点(36)下的电阻比所述源极和漏极接点(32、34)下的电阻大。
8.根据权利要求4的高电子迁移率晶体管，其特征在于所述阻挡层(30)在所述栅极接点(36)下较薄。
9.根据权利要求1的高电子迁移率晶体管，其特征在于所述AlxGa1-xN阻挡层(30)和所述AlyGa1-yN层(28)以数字方式构成，其中所述数字方式指的是叠加不同数量不同材料的层构成复合层，使得各材料在复合层中的整体含量与该材料的层的数量在总层数中的比例相等。
10.一种III族氮化物基高电子迁移率晶体管(20)，其包括：
一半导体缓冲层(26)；
一在所述缓冲层(26)上的高极化半导体层(28)；
一半导体阻挡层(30)，其在所述高极化层(28)上，以致使所述高极化层被夹在缓冲层(26)和阻挡层(30)之间，所述每一层的非零的总极化指向同一方向，在高极化层(28)中所述极化强度值比所述缓冲层(26)和阻挡层(30)的极化高，其中所述半导体阻挡层的厚度大于100，及
二维电子气(38)，其在所述缓冲层(26)和所述高极化层(28)之间的界面上。
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