CN100392928C - Pumping cavity of lateral pumping solid laser of semiconductor laser with big power - Google Patents
Pumping cavity of lateral pumping solid laser of semiconductor laser with big power Download PDFInfo
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- CN100392928C CN100392928C CNB2004100267911A CN200410026791A CN100392928C CN 100392928 C CN100392928 C CN 100392928C CN B2004100267911 A CNB2004100267911 A CN B2004100267911A CN 200410026791 A CN200410026791 A CN 200410026791A CN 100392928 C CN100392928 C CN 100392928C
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Abstract
The present invention relates to a pumping cavity of a high-power semiconductor laser light lateral pumping solid laser, which comprises a linear array laser diode, a light guiding coupling element, a diffuse reflection cavity body, a cooling water casing pipe and a solid laser medium. Pumping light which does not directly irradiate the solid laser medium eccentrically irradiates the inner wall of the diffuse reflection cavity body after compressed and uniformly irradiates the solid laser medium after diffusely reflected via the inner wall of the diffuse reflection cavity body. The pumping cavity of a high-power semiconductor laser light lateral pumping solid laser provides a new method for eccentrically injecting the pumping light so that the incident pumping light for the first time is compressed to a certain angle to irradiate the diffuse reflection cavity body wall rather than directly irradiating the solid laser medium, and then, the pumping light is uniformly absorbed by the solid laser medium after diffuse reflection, and thereby, the present invention avoids optical radiation damage and thermal stress damage with nonuniform absorption, which are caused by the pumping light which directly irradiates the solid laser medium. The present invention has the advantage of high pumping efficiency. The present invention realizes the high-quality and high-power output of solid laser light.
Description
Affiliated technical field
The present invention relates to a kind of pump cavity of high-power semiconductor laser side pumped solid laser device, the pump cavity of the eccentric high-power semiconductor laser side pumped solid laser device that injects of particularly a kind of pump light.
Background technology
The nineties, profile pump had very big development, announce announcement in US5572541 number at United States Patent (USP), in order to improve pumping homogeneity and to improve the power of pump light input, Coherent company adopts a plurality of linear array diode serial connections, the method for multi-direction profile pump.Pump light is by the optical lens direct irradiation solid laser medium that is coupled, and unabsorbed pump light incides on the solid laser medium behind the metal light-gathering cavity reflection once more.Cutting Edge optronics company replaces metallic reflection with deielectric-coating on this profile pump basis, developed three tunnel, five trackside face pumping cavitys.This pump cavity has advantages such as efficient height, pumping is even, volume is little, is pump module product salable in the world at present.The problem of this series products is:
1. the direct irradiation laser medium of pump light, solid laser medium will cause solid laser medium to damage to the strong absorption and the big thermal stress gradient of the light of incident high power pump first, thereby make the gross power of input pumping limited.
2. once unabsorbed pump light feeds back to the semiconductor laser diode light-emitting area with conjugation after deielectric-coating or metallic mirror surface reflection, quicken diode and wear out, and shortens the useful life of laser diode.
3. multichannel array laser diode clings to the three-dimensional side pumped solid laser medium of looping, and complex structure, cost height, manufacturing and maintenance service difficulty are big.
Announce announcement in US5841099 number at United States Patent (USP), for the brightness that improves Solid State Laser with improve beam quality, Lightwave electronics, inc. adopts thin diameter solid laser rod of low concentration and big homocentric reflection cavity structure to obtain the output of single mode Solid State Laser, to ultraviolet band, be used for the printed circuit board (PCB) manufacturing through 3 subharmonic.The pumping efficiency of this method is lower, and pump power is not high.Announce announcement in US5774488 number at United States Patent (USP), in order to improve the coupling efficiency that pump light injects pump cavity, the said firm has designed the slotted leaded light method of pump cavity and has replaced the optical lens coupled method, has realized single channel and four tunnel symmetry side pumped solid laser devices.But this method exists slot wall absorption loss big and make the bigger problem of optical flat slot wall difficulty on reflection chamber.For this reason, announce in US5867324 number at United States Patent (USP) and to disclose, the said firm has developed and inserts the slit leaded light with narrow glass bar and replace the air-gap slit, but still has the direct irradiation solid laser medium of pump light and cause the problem of solid laser medium damage.
Announce announcement in US5978407 number at United States Patent (USP), for aggregate capabilities that strengthens pump light and the absorption loss that reduces the slit sidewall, people such as Jim J.Chang have designed and have split the shape slit, and used special material CPC and golden synthetic paint to be plated on the inner slit walls, but this method is unfavorable for the high power light pumping.
Since 2000, the diffuse reflection of ceramic chamber, slit photoconduction and integrated technology combination make the profile pump technology further perfect.At " IEEE " (J.QE-23,1997) the 40th～44 page of announcement in, absorb in order to make solid laser medium obtain uniform pump light, Mitsubishi Electric company changes metal reflection cavity into ceramic diffuse-reflective cavity, and on ceramic diffuse reflection cavity slotted leaded light, obtain high-quality high power solid-state laser output.At " Optics Letter " (Vol.26, No.9,2001) the 602nd～604 page of announcement in, in order to improve the light distribution in the pump cavity, the said firm also changes stripline runs array diode crust into annular array crust, and the crust that makes each ring arranges at the Nd:YAG rod certain angle that radially staggers, and obtains the uniform pumping effect.
Announce announcement in US6594299 number at United States Patent (USP), in order to strengthen diffuse effect, pump light is more evenly distributed, people such as Yoshihito Hirano have adopted the dual diffuse reflection method of the inside and outside wall of jacket pipe, but the light conversion efficiency of this method is lower.Announce US6282217 number announcement at United States Patent (USP), in order to increase the first diffuse reflection absorptivity of solid laser medium to pump light, Tomohiro Takase adopts the pump light shaping to import water cooling tube inner close solid laser medium, closely diffuse reflection irradiation solid laser medium.Though this mode pumping efficiency is higher, complex process, and be difficult to pump cavity is carried out maintenance service.Announce announcement in No. 6330259 at United States Patent (USP), Jonathan S.Dahm proposes to cool off diode array crust and solid laser medium simultaneously with the microchannel water-cooled valve, makes the integrated curing of pump cavity.Whole pump cavity is compact very, but manufacturing process is very complicated, and cost and labour cost are all very high.
The semiconductor side pumped solid laser technology of China still is in basic research and research and development of products stage, and is bigger with the international most advanced level gap.At " Chinese laser " (people such as Zhou Fuzheng work, A21 in 1994 volume o. 11th) (the people's work such as Zhou Fuzheng of the 865th～868 page and " Chinese laser " in, A21 rolled up for the 5th phase in 1994) in the 354th～359 page of announcement, people such as Zhou Fuzheng have at first realized high power semiconductor laser diode array side pumped solid laser output at home the beginning of the nineties.
The profile pump technical progress is very fast in recent years, at " laser and infrared " (people such as Wang Jianjun work, A30 rolled up for the 5th phase in 2000) in the 286th～288 page and " Chinese laser " (people's work such as Zhou Shouhuan, calendar year 2001, A28 rolled up for the 4th phase) in the 301st～303 page of announcement, Huabei (North China) Institute of Electro-Optics adopts three tunnel optical coupled and five tunnel near water jacket profile pump Nd:YAG rod, glass water-jacket outer wall plating 808nm reflectance coating.At " quantum optices journal " (people such as Liu Yuan work, 2002 the 8th the 2nd phases of volume) the 89th～92 page of announcement in, Chinese Academy of Sciences's semiconductor laser diode array that semiconducter research adopts passes through the optical fibre rod Lens Coupling, three trackside face pumping Nd:YAG rods, unabsorbed pump light reflexes to Nd:YAG by the copper cavity and absorbs.Announce announcement in CN2598215Y number at Chinese patent, the Central China University of Science and Technology has developed semiconductor laser diode array three trackside face pumping Nd:YAG rods, and adopts the outer silver-plated reflector of glass water jacket method.The technology type of above-mentioned these method for pumping and Cutting Edge optronics company seemingly is equivalent to the world level of the mid-90.Announcement in CN1417906A number is disclosed at Chinese patent, Semiconductor institute, Chinese Academy of Sciences has designed integrated annular large-power diode array profile pump chamber, the laser diode array annular need not optical coupling system near the Nd:YAG rod, has the advantage that module is solidified.Modern design, but manufacturing process is special, can not substitute with the common commercial diode array and use instead, and with United States Patent (USP) to announce the described method of US5627850 patent similar.
No matter the profile pump chamber technology of above patent and article is by optical focus, or open slots still is glass lath leaded light, no matter be or use the ceramic cavity diffuse reflection with the wire chamber direct reflection, and all be over against solid laser medium axle center irradiation pump light.The photoirradiation damage threshold and the thermal stress gradient of solid laser medium have limited the injection of pump power, thereby make the Solid State Laser power output limited.
Summary of the invention
The objective of the invention is to overcome the shortcoming of prior art, provide a kind of light radiation that can avoid pump light direct radiation solid laser medium to cause to destroy, realize the even absorptive pumping light of solid laser medium with the diffuse reflection method simultaneously, avoided thermal stress damage, therefore can realize high-power input, realize the output of high-quality high power solid-state laser.
The technical solution adopted for the present invention to solve the technical problems is: the pump cavity of this a kind of high-power semiconductor laser side pumped solid laser device, comprise linear array laser diode bar crust, leaded light coupling element, diffuse reflection cavity, cooling water pipe and solid laser medium, open eccentric grove at described diffuse reflection cavity, make pump light not direct radiation to solid laser medium, pump light is through being radiated at after the overcompression on the diffuse reflection cavity inwall, after the diffuse reflection of diffuse reflection cavity inwall, evenly irradiation is on solid laser medium.
The present invention with respect to the advantage that prior art had is: the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention has proposed the eccentric new method of injecting of pump light, eccentric light-guiding method and diffuse reflection cavity have been adopted, the pump light that makes incident first not direct radiation to solid laser medium, but be compressed to certain angle, shine on the diffuse-reflective cavity body wall, evenly absorbed by solid laser medium through after the diffuse reflection again, avoid light radiation that pump light direct radiation solid laser medium causes to destroy and absorbed uneven thermal stress damage, the pumping efficiency height, inject pump power on the principle and can reach a kilowatt magnitude, realize the output of high-quality high power solid-state laser.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the cutaway view of the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention.
Fig. 2 is the pump light compression front and back normalization Space Angle distribution result of calculation of the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention.
Fig. 3 be the pump light of pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention after compression irradiation in diffuse reflection cavity A district chamber wall and A district as irreflexive track schematic diagram first time of area source.
Fig. 4 is pump light pumping light intensity distribution program result of calculation on solid laser medium of the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention.
Fig. 5 is the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention when carrying out the Laser Experiments of wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 2mm * 63mm Nd:YAG rod, the 808nm pump light intensities distribution measuring results on the Nd:YAG rod.
Fig. 6 is the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention when carrying out the Laser Experiments of wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 2mm * 63mm Nd:YAG rod, the experimental result of Solid State Laser power output.
Fig. 7 is the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention when carrying out the Laser Experiments of wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 3mm * 63mm Nd:YAG rod, the 808nm pump light intensities distribution measuring results on the Nd:YAG rod.
Fig. 8 is the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention when carrying out the Laser Experiments of wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 3mm * 63mm Nd:YAG rod, the experimental result of Solid State Laser power output.
Embodiment
The difference of the power that the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention reaches as required can be designed to the pump cavity that laser diode line array laser clings to single channel, two-way and multichannel side pumped solid laser device.Only the pump cavity of laser diode line array laser crust single channel is described in the present embodiment, the pump cavity of two-way and multichannel side pumped solid laser device is identical with the design principle of the pump cavity of single channel side pumped solid laser device.
As Fig. 1 and shown in Figure 3, the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention, comprise linear array laser diode bar crust 1, leaded light coupling element 2, diffuse reflection cavity 3, cooling water pipe 4 and solid laser medium 6 compositions, wherein in certain area A district of diffuse reflection cavity 3 inwalls, rather than direct irradiation is to solid laser medium 6 through total reflection compression back irradiation for pump light.
In the present embodiment, the leaded light coupling element 2 of the pump cavity of high-power semiconductor laser side pumped solid laser device is narrow parallel plane glass bar, import pump light in narrow parallel plane glass bar inner total reflection, the glass bar both ends of the surface are protruding-ramp structure, also be applicable to flat-tiltedly, Ping-Ping or trapezoidal, pyramidal structure.Leaded light coupling element 2 also can be quartzy or other low-consumption optical material.Cling to the distance, delta L of 1 light emitting source and eccentric shaft perforate apart from d by calculating leaded light coupling element 2 and linear array laser diode bar, the light guide effect of more protruding-oblique, protruding-Ping, flat-oblique, flat-oblique peace-Ping glass bar, design length L, thickness, curvature R and the oblique angle of leaded light coupling element 2, to reach the effect of compressing to the pump light of input.
In the present embodiment, the diffuse reflection cavity 3 of the pump cavity of high-power semiconductor laser side pumped solid laser device is the aluminium oxide ceramics material, also can paint enamel metal ware, or adopt polytetrafluoroethylene, magnesia powder or blanc fixe etc. to do diffuse reflection cavity 3 with the sintering of multiple doping.Diffuse reflection cavity 3 is opened eccentric grove, makes the not direct irradiation of pump light to solid laser medium 6, but at first incides on the inwall of diffuse reflection cavity 3, is evenly absorbed by solid laser medium 6 after diffuse reflection again.In the present embodiment, cooling water pipe 4 is the bath of glass sleeve pipe.
Linear array laser diode bar crust 1 is single, two or three above wire bar shaped crust, and pump mode is continuous or pulsed light, adopts microchannel deionization cooling; Or without the microchannel, with common distilled water cooling.In the present embodiment, solid laser medium 6 is Nd:YAG, also available Nd:YVO
4, Nd:YLF, Yb:YAG, Nd:glass, Er:YAG or other solid laser material.
Pump light normalization Space Angle distributes as shown in Figure 2 before and after the compression.Pump light irradiation after Fig. 3 represents to compress is illustrated as the diffuse reflection first time track of area source at the A district of diffuse reflection cavity 3 chamber wall and A district.Be accumulated in the pumping light intensity spatial distribution that absorbs on the solid laser medium 6 by calculating repeatedly diffuse reflection, pump light is pressed cos θ intensity distributions ± 90 ° of inscatterings, and the solid laser rod cross section is divided into 1600 unit.Program calculated result as shown in Figure 4, the relative intensity through the pump light after the diffuse reflection accumulation is repeatedly represented on 1600 unit in solid laser rod cross section in axis of abscissas and axis of ordinates 1600 unit that expression solid laser rod cross section is divided that combine wherein, the 3rd reference axis.As can be seen from Figure 4, the pumping light intensity is evenly distributed on solid laser medium 6, uses the result of metallic mirror surface reflection cavity or ceramic diffuse-reflective cavity when being better than pump light direct radiation solid laser medium 6.
1. pumping efficiency is calculated
A. pump light efficiency of transmission
The pump light loss comprises that the narrow glass bar of the leaded light that plates anti-reflection film absorbs and reflection loss δ
1≈ 1.0%, cooling water pipe 4 and water absorption loss δ
2≈ 1.5%, ceramic chamber wall absorption loss δ
3≈ 1.4%, the slotted light leak loss of ceramic chamber sidewall δ
4≈ 6.8%, so the pump light efficiency of transmission is:
The b.Nd:YAG absorption efficiency
The diffuse reflection pump light is first by Nd:YAG absorption efficiency η
1≈ 0.56, and unabsorbed pump light is once more by Nd:YAG absorption efficiency η
2≈ 0.19, repeatedly the gross efficiency of Xi Shouing
η
i＝0.97
C. photon conversion efficiency η
λ=0.76
D. quantum efficiency η
0=0.95
E. Solid State Laser resonant cavity coupling efficiency η
c=0.82
F. multi-stripe laser diode crust spectrum inconsistency causes the wavelength efficiency eta that disperses
LD=0.90
G. drive current and water flow velocity cause laser diode spectrum drift efficiency eta
I=0.85
The summation of h. above efficient product is the oblique efficient of light-light: η
s=0.39
I. pumping threshold power determines P by Solid State Laser cavity loss, solid laser rod diameter with the parameters such as drift of ceramic chamber diameter ratio, laser diode center spectrum under little current drives
Th=20～45W
J. light-optical efficiency: η
0=23%～32%
To several size Nd:YAG rods of different capacity semiconductor laser diode array crust pumping, the result of calculation of pumping input power, Solid State Laser power output and light-optical efficiency when the weak point cavity resonator structure is as follows:
Model LD pumping input power Nd:YAG rod light-optical efficiency Solid State Laser power output
HLDP-1 3×CW50W φ2×70mm 23％ CW34W
HLDP-2 3×CW50W φ3×70mm 28％ CW42W
HLDP-3 5×CW50W φ2×90mm 25％ CW62W
HLDP-4 5×CW50W φ3×90mm 29％ CW72W
HLDP-5 5×CW50W φ4×90mm 30％ CW75W
HLDP-6 2×5×CW50W φ4×90mm 31％ CW150W
HLDP-7 2×5×CW50W φ5×90mm 32％ CW160W
HLDP-8 3×5×CW50W φ5×90mm 32％ CW240W
2. the experiment of pumping cavity
Pump cavity for high-power semiconductor laser side pumped solid laser device of the present invention, carry out wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 2mm * 63mm Nd:YAG rod Laser Experiments, adopted the microchannel to cool off continuous 150W diode crust bar.808nm pump light intensities on the Nd:YAG rod distributes as shown in Figure 5.Solid state laser is exported as shown in Figure 6, and wherein transverse axis is represented electric current C, and unit is peace (A), and the longitudinal axis is represented power P, and unit is watt (W).When pump power was continuous 150W, the Nd:YAG laser output power was 39.6W, and optical efficiency is 26.4%, conform to calculated value, and the pump light uniform absorption, the Solid State Laser output mode is few.
Carried out wall scroll high power semiconductor laser diode array 3 * CW50W single side face pumping φ 3mm * 63mm Nd:YAG rod Laser Experiments,, need not the Micro Channel Architecture cooling with common distilled water cooling diode crust bar and solid laser rod.The intensity distributions of 808nm pump light on Nd:YAG rod cross section as shown in Figure 7, light distribution is even.Nd:YAG laser is exported as shown in Figure 8, and wherein transverse axis is represented electric current C, and unit is peace (A), and the longitudinal axis is represented power P, and unit is watt (W).When pumping light power 150W, the output of Nd:YAG laser reaches 43W, and optical efficiency reaches 28%.
The pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention has proposed the eccentric new method of injecting of pump light, eccentric light-guiding method and diffuse reflection cavity 3 have been adopted, the pump light that makes incident first not direct radiation to solid laser medium 6, but be compressed to certain angle, shine on the diffuse reflection cavity 3 inwalls part area, evenly absorbed by solid laser medium 6 through after the diffuse reflection again, the light radiation of having avoided pump light direct radiation solid laser medium 6 to cause destroys, the pumping efficiency height, inject pump power on the principle and can reach a kilowatt magnitude, realize the output of high-quality high power solid-state laser.
The diode array of the pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention can substitute with the common commercial diode array and use instead, and production cost is lower.
The pump cavity of high-power semiconductor laser side pumped solid laser device of the present invention is simple in structure, compact, and cost is low, can make in batches, is convenient to maintenance service.
The pump cavity of high power semiconductor laser diode array of the present invention side pump shop solid state laser is particularly suitable for the super high power pump power and injects and reach solid laser medium and evenly throw light on, its high-quality high power solid-state laser output can directly apply to the industrial lasers system of processing, as laser cutting, laser welding and laser drill.Also be the ideal basis glistening light of waves source that produces high power harmonic wave laser, the high-quality harmonic wave laser of its generation can be applicable to the laser retrofit.
Claims (6)
1. the pump cavity of a high-power semiconductor laser side pumped solid laser device, comprise linear array laser diode bar crust, leaded light coupling element, diffuse reflection cavity, cooling water pipe and solid laser medium, it is characterized in that: open eccentric grove at described diffuse reflection cavity, make pump light not direct radiation to solid laser medium, pump light is through being radiated at after the overcompression on the diffuse reflection cavity inwall, after the diffuse reflection of diffuse reflection cavity inwall, evenly irradiation is on solid laser medium.
2. the pump cavity of high-power semiconductor laser side pumped solid laser device according to claim 1, it is characterized in that: the material of the leaded light coupling element of the pump cavity of this high-power semiconductor laser side pumped solid laser device is glass or quartz, the both ends of the surface of leaded light coupling element are protruding-ramp structure, perhaps for flat-tiltedly, Ping-Ping, trapezoidal and pyramidal structure.
3. the pump cavity of high-power semiconductor laser side pumped solid laser device according to claim 1, it is characterized in that: the diffuse reflection cavity of the pump cavity of this high-power semiconductor laser side pumped solid laser device adopts the aluminium oxide ceramics material, perhaps adopts sintering Beijing enamel, polytetrafluoroethylene, magnesia powder and the blanc fixe of multiple doping.
4. the pump cavity of high-power semiconductor laser side pumped solid laser device according to claim 1, it is characterized in that: the linear array laser diode bar crust of the pump cavity of this high-power semiconductor laser side pumped solid laser device is single, two or three above wire bar shaped crust, pump mode is continuous or pulsed light, adopt microchannel deionization cooling, or without the microchannel, with common distilled water cooling.
5. the pump cavity of high-power semiconductor laser side pumped solid laser device according to claim 1 is characterized in that: the solid laser medium of the pump cavity of this high-power semiconductor laser side pumped solid laser device is Nd:YAG, perhaps is Nd:YVO
4, Nd:YLF, Yb:YAG, Nd:glass and Er:YAG solid laser material.
6. according to the pump cavity of claim 2 or 3 or 4 or 5 described high-power semiconductor laser side pumped solid laser devices, it is characterized in that: cooling water pipe is the bath of glass sleeve pipe.
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| WO2013013382A1 (en) * | 2011-07-25 | 2013-01-31 | 华中科技大学 | Homogenized rod based multi-pump disc solid-state laser |
| CN106848819A (en) * | 2017-02-08 | 2017-06-13 | 北京宏强富瑞技术有限公司 | The main power amplifier device of all solid state ultrafast laser |
| CN106785851A (en) * | 2017-02-08 | 2017-05-31 | 北京宏强富瑞技术有限公司 | For the main power amplifier device of all solid state ultrafast laser |
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|---|---|---|---|---|
| JPH05315680A (en) * | 1992-05-13 | 1993-11-26 | Brother Ind Ltd | Solid-state laser |
| US5572541A (en) * | 1994-10-13 | 1996-11-05 | Coherent Technologies, Inc. | Laser rod assembly for side pumped lasers |
| US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
| US6282217B1 (en) * | 1998-09-04 | 2001-08-28 | Kabushiki Kaisha Toshiba | Solid-state laser device |
| CN1417906A (en) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | Great-power laser diode array pumping cavity for pumping solid laser |
| US6594299B1 (en) * | 1998-11-12 | 2003-07-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser light emitting apparatus and solid-state laser rod pumping module |
-
2004
- 2004-04-05 CN CNB2004100267911A patent/CN100392928C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315680A (en) * | 1992-05-13 | 1993-11-26 | Brother Ind Ltd | Solid-state laser |
| US5572541A (en) * | 1994-10-13 | 1996-11-05 | Coherent Technologies, Inc. | Laser rod assembly for side pumped lasers |
| US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
| US6282217B1 (en) * | 1998-09-04 | 2001-08-28 | Kabushiki Kaisha Toshiba | Solid-state laser device |
| US6594299B1 (en) * | 1998-11-12 | 2003-07-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser light emitting apparatus and solid-state laser rod pumping module |
| CN1417906A (en) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | Great-power laser diode array pumping cavity for pumping solid laser |
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